紫外辐照对聚醚酰亚胺薄膜介电性能的影响

研究了不同紫外辐照时间对聚醚酰亚胺(PEI)薄膜介电性能的影响。采用FT-IR和SEM表征了PEI薄膜的分子结构和微观形貌。结果表明,紫外辐照后PEI薄膜在1742 cm-1处的吸收峰比原薄膜增大,说明PEI分子链中的C=O基团随辐照时间的增加而增加,并在薄膜表面产生了微裂纹。对PEI薄膜的介电性能进行的研究结果表明,随着紫外辐照时间的增加,PEI薄膜的介电常数和介电损耗增大,而表面电阻率下降,体积电阻率基本不变。并随紫外辐照时间的增加,直流击穿强度呈先增加后降低的趋势,一定辐照剂量可使薄膜发生交联反应,使击穿场强较原薄膜提高20%以上。     

原子氧与紫外综合辐照下Kapton/Al结构变化

在激光源原子氧地面模拟设备中对Kapton/Al薄膜二次表面镜进行了原子氧与紫外综合辐照实验,研究了Kapton/Al薄膜质量及太阳吸收比的变化,重点关注了实验前后Kapton/Al薄膜表面结构及成份的改变。结果表明：Kapton/Al薄膜二次表面镜的质量随辐照时间的增加逐渐减小,太阳吸收比的变化趋势与之相反,随辐照时间的增加逐渐增大;综合辐照后Kapton/Al薄膜表面主要官能团数量呈下降趋势;综合辐照过程中材料表面C-C键、C-N键的破坏及在原子氧和紫外环境中重新结合成新的化学结构是造成Kapton/Al薄膜性能退化的主要微观机制,气体小分子的挥发是造成Kapton/Al薄膜质量损失的主要原因。     

真空紫外辐照对交联乙烯-四氟乙烯线缆的影响北大核心CSCD

以航天器舱外用交联乙烯-四氟乙烯共聚物(X-ETFE)线缆为试验对象,采用5倍加速因子对XETFE线缆累计进行了8000等效太阳小时(ESH)真空紫外(VUV)辐照,并通过极限耐电压、绝缘材料电阻测试分析X-ETFE线缆电性能,采用FTIR和SEM表征X-ETFE材料分子结构和微观形貌,以此研究不同VUV辐照时间对X-ETFE线缆的影响。试验结果表明,随着VUV辐照时间的增加,材料表面累积了碳而发生暗化,线缆外观颜色逐渐变为深棕色;X-ETFE线缆的极限耐压和绝缘电阻呈总体下降趋势,但整体电性能水平未发生本质变化;X-ETFE材料在1628 cm^(−1)处的吸收峰逐步增大,说明X-ETFE材料分子链中的−C=C−自由基团随辐照时间而增多,致使材料表面出现了微裂纹现象。     

含氮类金刚石薄膜的紫外辐照研究

用射频等离子体方法在玻璃基底上制备的类金刚石（DLC）薄膜,采用离子注入法掺氮,并对掺氮DLC薄膜紫外（UV）辐照前后的性能变化进行了研究。研究结果表明：随氮离子注入剂量及UV辐照时间的增加,位于2 930cm-1附近的SP3C-H吸收峰明显变小,而位于1 580cm-1附近的SP2C-H吸收峰则明显增强,薄膜的电阻率明显呈下降趋势;随UV辐照时间的增加,位于1 078cm-1附近的Si-O-Si键数量及位于786cm-1附近的Si-C键数量明显增加。即氮离子注入和UV辐照明显改变了DLC薄膜的结构与特性。     

真空紫外辐照对MQ增强硅橡胶热性能及光学性能的影响

 采用空间综合辐照模拟设备研究了真空紫外辐照对MQ增强加成型硅橡胶的表面形貌、质量损失、热性能及光学性能的影响。试验结果表明：真空紫外辐照后,硅橡胶表面出现损伤裂纹,随辐照剂量的增加,裂纹的数量增多;真空紫外辐照后,硅橡胶的质量有所损失,其质损率随辐照剂量的增加而增加;真空紫外辐照后硅橡胶的耐热性随辐照剂量的增加先增加而后下降;真空紫外辐照对硅橡胶材料的体膨胀/收缩变形影响不大,但对材料的光学性能有较大影响,随着辐照剂量的增加,材料的光学透过率下降。     

含氮类金刚石薄膜的紫外辐照研究

 用射频等离子体方法在玻璃基底上制备的类金刚石（DLC）薄膜，采用离子注入法掺氮，并对掺氮DLC薄膜紫外（UV）辐照前后的性能变化进行了研究。研究结果表明：随氮离子注入剂量及UV辐照时间的增加，位于2 930cm^-1附近的SP ³C-H吸收峰明显变小，而位于1 580cm^-1附近的SP2C-H吸收峰则明显增强，薄膜的电阻率明显呈下降趋势；随UV辐照时间的增加，位于1 078cm^-1附近的Si-O-Si键数量及位于786cm^-1附近的Si-C键数量明显增加。即氮离子注入和UV辐照明显改变了DLC薄膜的结构与特性。     

Cu-W薄膜表面形貌的分形表征与电阻率

磁控溅射制备铜钨薄膜，用原子力显微镜和功率谱密度法分析薄膜生长表面形貌的分形维数，发现频段的选择基本不影响分形维数与溅射时间的关系.随溅射时间延长，薄膜厚度增加，分形维数增大，电阻率随分形维数的增大而升高.分析分形维数与电阻率的关系，认为对同一物质的导电薄膜，其表面形貌与电阻率存在对应关系. 关键词： Cu-W薄膜 分形维数 功率谱密度 电阻率     

紫外辐照高温硫化硅橡胶的红外光谱分析和老化机理

高温硫化(HTV)硅橡胶复合绝缘子广泛应用于特高压输电线路,其抗紫外老化性能越来越受到人们的关注。采用自行设计的可调式紫外老化试验箱对两个厂家的高温硫化硅橡胶样品进行了紫外辐照(0,500和1 000 h)加速老化实验,辐照光波长范围为320～750 nm。对辐照前后试样进行傅里叶变换衰减全反射红外光谱(ATR-FTIR)测试,分析谱峰的变化与试样(表面)官能团的关系,辅以扫描电子显微镜(SEM)和憎水性、体积电阻率的测试来研究HTV硅橡胶的老化机理。结果表明:高温硫化硅橡胶FTIR全谱图中1 260 cm~(-1)处Si—CH_3反射峰和800 cm~(-1)附近Si—(CH_3)_2反射峰强度随辐照时间的增加而逐渐减弱, 1 000～1 100 cm~(-1)处的Si—O—Si反射峰强度随辐照时间的增加先减弱后增强;扫描电镜观察到辐照后的样品表面出现大颗粒和坑洞、粗糙度变大,其主要元素O, Si和Al重量百分比略增加;喷水分级法在表面形成的水珠随着样品辐照时间的延长由均匀分布变得不均匀且出现合并,憎水性有明确下降;体积电阻率略微降低。分析认为:辐照后紫外线切断了HTV硅橡胶部分Si—C, C—C和C—H键,对称排列的非极性甲基基团—CH_3从硅氧主链上脱落,减弱了对主链强极性的屏蔽作用,使Si—O—Si峰强度减弱,且少量侧链被氧化,形成C—O和—OH(COOH);而主链之间因裸露出来的自由基—Si·发生进一步的交联反应,使得Si—O键相对含量增加,使Si—O—Si峰强度再增强。二方面结果均导致高温硫化硅橡胶表面极性增强,憎水性下降。水本身具有微弱的电离,憎水性下降的高温硫化硅橡胶易吸收空气中的水使其表面载流子浓度增加体积电阻率略有下降。通过红外光谱分析,紫外线是通过切断高温硫化硅橡胶表面的部分Si—C, C—C, C—H键,使其生成新的自由基并发生交联和氧化而使其老化的。红外光谱的应用对于高温硫化硅橡胶复合绝缘子老化研究及其在特高压输电线路上的挂网应用均具有重要意义。     

γ射线辐照对a-SiC:H薄膜结构与特性的影响

采用射频（13.56 MHz）反应溅射方法制备a-SiC:H 薄膜,并将其在空气中进行高能γ射线(平均为1.25 MeV)辐照,5个样品的吸收剂量分别为0,2×104,4×104,6×104,8×104 Gy。采用拉曼及红外光谱对薄膜的结构进行表征,得到了其结构与特性的变化规律。研究与分析表明：随样品吸收剂量的增加,陷入空穴中的电子会被激发,a-SiC:H薄膜中的SiC成份增加,电阻率变小,数量级为105Ω·cm;薄膜存在结晶化的趋势,其主要原因在于由Si－O－Si键断裂而产生的Si取代膜中C－C键中的C而形成晶态SiC,在此过程中出现了Si－O－Si键及a-SiC:H的减少,晶态SiC的增加。经γ射线辐照后薄膜的氢含量降低,折射率从5.19增大到5.53,辐照后薄膜的透过率均低于原膜的透过率。在500~2 300 cm-1(对应波长为20.00~5.29 μm)波段内,a-SiC:H薄膜存在一定的增透作用。     

γ射线辐照对类金刚石薄膜中氢含量的影响

用射频等离子体方法在玻璃基底上制备了类金刚石 (DLC)薄膜。采用拉曼光谱、可见紫外近红外光谱、红外光谱等手段对经γ射线 (其平均能量为 1 2 5MeV)辐照后的类金刚石薄膜中氢含量及其变化进行了分析。结果表明 ,随γ射线辐照剂量的增加 ,薄膜中SP3C H键数量明显减少 ,与此同时 ,薄膜中氢含量也随之减少。当辐照剂量达 1× 10 5Gy时 ,SP3C H键减少了约 5 0 %。利用光学带隙数据、完全抑制网络 (FCN)理论及相关计算得出膜中氢含量为 10 %～ 2 5 % ,且其含量随辐照剂量的增加而减少。随辐照剂量增加 ,类金刚石薄膜附着力增加及红外透过率的降低进一步验证了上述结论的正确性。     

Ultraviolet irradiation induced changes in the surface of phenolphthalein poly(ether sulfone) film

Changes in surface characteristics of phenolphthalein poly(ether sulfone) (PES-C) film induced by ultraviolet (UV) irradiation were investigated. The surface properties of the pristine and irradiated films were studied by attenuated total-reflection FTIR (FTIR-ATR), X-ray photoelectron spectroscopy (XPS), contact angle measurements and atomic force microscopy (AFM). It was found that photooxidation degradation took place on the sample surface after irradiation and the oxygen content in the surface increased as evidenced by FTIR-ATR and XPS results. The water contact angle of the irradiated films decreased with increasing irradiation time, which was ascribed to the increased polarity of the surface induced by photooxidation. The etching of ultraviolet irradiation induced the roughening of PES-C surface after irradiation with its root-mean-square roughness (RMS) determined by AFM increased from 2.097 nm before irradiation to 7.403 nm in the area of 25 μm × 25 μm.     

γ射线与N离子辐照类金刚石薄膜的机理研究

对类金刚石 (以下简称 DLC)薄膜受 γ射线与 N离子辐照的结果进行了比较 .通过 Raman光谱分析得出 :γ射线辐照造成薄膜中 SP3C— H和 SP2C— H键的减少及 SP3C— C键的增加 ,与此同时氢原子结合成氢分子 ,并从膜中释出 ,薄膜的类金刚石特征更加明显.当辐照剂量达1 0×104Gy时 ,SP3C—H键减少了约 5 0 % .N离子辐照使 DLC薄膜中 SP3C— C键、SP2 C—H键及 SP3C—H键的含量均变少 ,并伴随着氢分子的释出 ,直接导致 DLC薄膜的进一步石墨化,其对 SP3C—H及 SP2C— H键的破坏程度远大于γ射线 .两者在辐照机理上截然不同.The results of the diamond like carbon films(the following is called for short DLC film) irradiated by γ rays and N ion were reported. It showed that SP 3C—H and SP 2C—H bonds were decreased, and SP 3C—C bonds were increased by γ ray irradiation, and induced hydrogen recombination with H 2 molecules, and subsequently released from the surface of the films. When the γ ray irradiation dose reached 10×104Gy, the numbers of SP3C—H bonds were decreased by about 50%...     

Electron-beam irradiation effects on poly(ethylene-co-vinyl acetate) polymer

Poly(ethylene-co-vinyl acetate) (EVA) films were irradiated with a 1.2 MeV electron beam at varied doses over the range 0–270 kGy in order to investigate the modifications induced in its optical, electrical and thermal properties. It was observed that optical band gap and activation energy of EVA films decreased upon electron irradiation, whereas the transition dipole moment, oscillator strength and number of carbon atoms per cluster were found to increase upon irradiation. Further, the dielectric constant, the dielectric loss, and the ac conductivity of EVA films were found to increase with an increase in the dose of electron radiation. The result further showed that the thermal stability of EVA film samples increased upon electron irradiation.     

紫外光下纳米TiO2薄膜亲水性机理的电化学研究

利用溶胶 凝胶方法在透明导电玻璃ITO (SnO2 ∶In)表面制备纳米TiO2 薄膜 ,XRD谱图表明TiO2 是锐钛矿晶型 ,AFM (Atomic Force Microscope)测得薄膜表面粒子约为 10 0nm .研究了ITO表面纳米TiO2 薄膜的光致亲水性变化 .通过循环伏安技术测定TiO2 薄膜电极在 2 5 3.7nm的紫外光照射后的电化学行为推测光致亲水性机理 .发现在紫外光照射一定时间后 ,TiO2 薄膜电极的循环伏安图在 +0 .0 35V处出现新的氧化峰 ;且随光照时间的增加 ,氧化峰的峰电流增大 ,溶液中的溶解氧对峰电流的大小有明显影响 .实验表明 ,在紫外光照下电极表面有Ti3 + 产生 ,证实了TiO2 薄膜的光致亲水性转变过程与Ti3 + 的生成导致的表面结构变化有关     

Influence of high-energy electron irradiation on the transport properties of La1-xCaxMnO3 films ($$(x \approx 1/3)$$ )

The effect of crystal lattice disorder on the conductivity and colossal magnetoresistance in La_1-xCa_xMnO₃ ( ) films has been examined. The lattice defects are introduced by irradiating the film with high-energy ( MeV) electrons with a maximal fluence of about cm^-2. This comparatively low dose of irradiation produces rather small radiation damage in the films. The number of displacements per atom (dpa) in the irradiated sample is about 10^-5. Nevertheless, this results in an appreciable increase in the film resistivity. The percentage of the resistivity increase in the ferromagnetic metallic state (below the Curie temperature ) was much greater than that observed in the insulating state (above ). At the same time irradiation has much less effect on or on the magnitude of the colossal magnetoresistance. A possible explanation of such behavior is proposed. Received 21 July 1999 and Received in final form 27 December 1999     

Electron transport in semiconducting nanoparticle and nanocluster carbon-polymer composites

The electron transport properties of two types of carbon-polyimide (C-PI) nanocomposite thin films have been evaluated. Conductive nanocomposites formed by incorporation of 30 nm carbon particles prior to polymer cross linking (ex situ formation) has been compared to high energy ion beam irradiation in situ formation of nanoscale carbon clusters within the polymer composite. Addition of carbon nanoparticles were able to reduce the resistivity by 13 orders of magnitude for 8 vol% carbon content. The irradiated in situ formed film showed a comparable resistivity to this 8% C-PI film. All the films exhibited negative temperature coefficient of resistance (NTCR) behaviour. While in the ex situ films the NTCR decreased progressively with increasing temperature above 350 K, the in situ film exhibited a constant NTCR value at ambient as well as elevated temperatures indicating that films formed by ion beam irradiation eliminate possible clustering of nanoparticles prior to crosslinking seen in the ex situ films. The optimum hop energies for the ex situ films ranged from 23.1 to 8.05 meV when carbon content increased from 1 to 8 vol% and the corresponding value for the in situ formed film was 34.94 meV. These films had appreciable NTCR values, and were evaluated for their thermistor behaviour as a class of material with potential for temperature sensing devices.     

Formation of TiO2 film with lower electrical resistance by aerosol beam and fiber laser irradiation

Titanium dioxide (TiO₂) is a functional ceramic with unique photoconductive and photocatalytic properties. In our previous study, a TiO₂ film was formed by aerosol beam irradiation. The films were darkened by femtosecond laser irradiation in air. Then electrical resistance of the darkened area on the film decreased. The heating process is also a useful method to vary the TiO₂ film property. Local heating can be performed by using a continuous wave (CW) fiber laser. In this study, the film was irradiated with a commercial CW fiber laser in vacuum. Laser irradiated area on the film was also darkened after CW fiber laser irradiation. The electrical resistance of the darkened area on the films was decreased as laser fluence was increased. Electrical resistance of the darkened area after CW fiber laser irradiation in vacuum was much smaller than that after femtosecond laser irradiation.