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1.
Dielectric and Raman scattering experiments were performed on polycrystalline Pb1-xCaxTiO3 thin films (x=0.10, 0.20, 0.30, and 0.40) as a function of temperature. The results showed no shift in the dielectric constant (K) maxima, a broadening with frequency, and a linear dependence of the transition temperature on increasing Ca2+ content. On the other hand, a diffuse-type phase transition was observed upon transforming from the cubic paraelectric to the tetragonal ferroelectric phase in all thin films. The temperature dependence of Raman scattering spectra was investigated through the ferroelectric phase transition. The temperature dependence of the phonon frequencies was used to characterize the phase transitions. Raman modes persisted above the tetragonal to cubic phase transition temperature, although all optical modes should be Raman inactive. The origin of these modes was interpreted in terms of a breakdown of the local cubic symmetry due to chemical disorder. The lack of a well-defined transition temperature and the presence of broad bands in some temperature interval above the FE–PE phase transition temperature suggested a diffuse-type phase transition. This result corroborates the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in these thin films. PACS 77.80.Bh; 77.55.+f; 78.30.-j; 77.80.-e; 68.55.-a  相似文献   

2.
Raman scattering measurements on the one-dimensional (1-D) blue bronze K0.3MoO3 are reported as function of temperature. At about 50 cm-1 a Raman line of Ag(A) symmetry was found with an anomalous temperature dependence. The line symmetry, the softening of the eigenfrequency and the apparent disappearing of the coupling constant at the critical temperature, allow us to assign this line to the amplitude mode of the CDW, predicted by the theory of the Peierls transition. A Peierls precursor at room temperature was also observed and is discussed.  相似文献   

3.
Dielectric and Raman scattering experiments were performed on various ceramics with composition Ba(Ti1-xZrx)O3. Such lead-free, environmental-friendly materials were shown, from dielectric measurements, to exhibit behaviours extending from conventional to relaxor ferroelectrics on increasing the zirconium concentration. The evolution of the Raman spectra was studied as a function of temperature for various compositions, and the spectroscopic signature of the corresponding phases was determined. In the relaxor state, the variation of the integrated intensity of the Raman lines with temperature showed a plateau at low temperature. This anomaly was also detected as a peak in depolarization current measurements, and attributed to ergodicity breaking which characterizes usual relaxor systems. Raman results hint at locally rhombohedral polar nanoregions resulting from the random fields associated with Zr ions. Received 25 September 1998  相似文献   

4.
Single-phase perovskite structure Pb1−xBaxTiO3 thin films (x=0.30, 0.50 and 0.70) were deposited on Pt/Ti/SiO2/Si substrates by the spin-coating technique. The dielectric study reveals that the thin films undergo a diffuse type ferroelectric phase transition, which shows a broad peak. An increase of the diffusivity degree with the increasing Barium contents was observed, and it was associated to a grain decrease in the studied composition range. The temperature dependence of the phonon frequencies was used to characterize the phase transition temperatures. Raman modes persist above tetragonal to cubic phase transition temperature, although all optical modes should be Raman inactive. The origin of these modes was interpreted in terms of breakdown of the local cubic symmetry by chemical disorder. The absence of a well-defined transition temperature and the presence of broad bands in some interval temperature above FE-PE phase transition temperature suggested a diffuse type phase transition. This result corroborates the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in these thin films. The leakage current density of the PBT thin films was studied at different temperatures and the data follow the Schottky emission model. Through this analysis the Schottky barrier height values 0.75, 0.53 and 0.34 eV were obtained to the PBT70, PBT50 and PBT30 thin films, respectively.  相似文献   

5.
The Cu1?xAxFe2O4 (A = Zn, Mg; x = 0.0, 0.5) ferrites were successfully synthesized by chemical co-precipitation method. X-ray diffraction and Raman spectroscopy reveals that all the ferrite samples are in single-phase with tetragonal structure for CFO and cubic spinel structure for CZFO and CMFO samples. SEM micrograph shows the variation of grain size with Zn and Mg doping in parent CFO sample. Frequency dependent dielectric response confirms the dielectric polarization and electrical conduction mechanism in the present series with a maximum value of dielectric constant and loss tangent for CZFO sample. The anomaly ~493 K in temperature dependent dielectric constant and dielectric loss is assigned to tetragonal to cubic phase transition in CFO sample. The magnetic measurement explored that the saturation value (Ms) is maximum for CZFO as compared to CFO and CMFO ferrites samples.  相似文献   

6.
We have performed dielectric and micro-Raman spectroscopy measurements in the 298–673 K temperature range in polycrystalline Pb0.50Sr0.50TiO3 thin films prepared by a soft chemical method. The phase transition have been investigated by dielectric measurements at various frequencies during the heating cycle. It was found that the temperature corresponding to the peak value of the dielectric constant is frequency-independent, indicating a non-relaxor ferroelectric behavior. However, the dielectric constant versus temperature curves associated with the ferroelectric to paraelectric phase transition showed a broad maximum peak at around 433 K. The observed behavior is explained in terms of a diffuse phase transition. The obtained Raman spectra indicate the presence of a local symmetry disorder, due to a higher strontium concentration in the host lattice. The monitoring of some modes, conducted in the Pb0.50Sr0.50TiO3 thin films, showed that the ferroelectric tetragonal phase undergoes a transition to the paraelectric cubic phase at around 423 K. However, the Raman activity did not disappear, as would be expected from a transition to the cubic paraelectric phase. The strong Raman spectrum observed for this cubic phase is indicative that a diffuse-type phase transition is taking place. This behavior is attributed to distortions of the perovskite structure, allowing the persistence of low-symmetry phase features in cubic phase high above the transition temperature. This result is in contrast to the forbidden first-order Raman spectrum, which would be expected from a cubic paraelectric phase, such as the one observed at high temperature in pure PbTiO3 perovskite. PACS 78.30.-j; 77.80.Bh; 64.70.Kb; 68.55.-a; 77.22.-a; 77.55.+f  相似文献   

7.
Raman scattering (including nonresonant, resonant, and surface enhanced scattering) of light by optical and surface phonons of ZnO nanocrystals and nanorods has been investigated. It has been found that the nonresonant and resonant Raman scattering spectra of the nanostructures exhibit typical vibrational modes, E 2(high) and A 1(LO), respectively, which are allowed by the selection rules. The deposition of silver nanoclusters on the surface of nanostructures leads either to an abrupt increase in the intensity (by a factor of 103) of Raman scattering of light by surface optical phonons or to the appearance of new surface modes, which indicates the observation of the phenomenon of surface enhanced Raman light scattering. It has been demonstrated that the frequencies of surface optical phonon modes of the studied nanostructures are in good agreement with the theoretical values obtained from calculations performed within the effective dielectric function model.  相似文献   

8.
The relative cross sections for one-phonon scattering at the E1 resonance have been measured for several cubic semiconductors. Using the dielectric theory of the Raman tensor and the values of the real and imaginary parts of the dielectric constant determined from optical measurements we are able to obtain relative values for the intraband deformation potential of the valence bands d53,0. Taking d53,0 = 1 for Ge we find the values 2.4, 1.0, 0.42, 0.64 and 1.1 for Si, GaAs, Mg2Si, Mg2Ge, and Mg2Sn, respectively.  相似文献   

9.
A series of samples of HoFe1?x Ni x O3 (x = 0.0, 0.1, 0.3) were prepared using the solid-state reaction technique to understand the structural, dielectric and conductivity properties before and after gamma irradiation of accumulated dose of 625 KGy. The X-ray diffraction confirms that all the samples exist in single-phase orthorhombic structure having space group Pbnm. With increasing dopant Ni, the unit cell volume and lattice parameters undergo small change. X-ray analysis show change in the interplanar spacing and full width at half maximum values after gamma irradiation. The Raman spectra of the samples show modifications after gamma irradiation. It can be easily seen that after gamma irradiation intensity, peak width are completely altered by gamma-absorbed dose. Measurement of dielectric loss and dielectric constant at room temperature was performed before and after gamma irradiation in the frequency range of 20 Hz–1 MHz. It is observed that the value of dielectric constant decreases after irradiation. The ac conductivity is estimated from the dielectric constant and loss tangent. Exposure to gamma radiation results in substantial modification in the physical properties of the Ni-doped Ho-based orthoferrites.  相似文献   

10.
The temperature dependence of far-infrared reflectivity spectra in sintered CuBr has been measured from 18 to 570 K. Phonon and mobile-ion parameters are evaluated by the fitting procedure with the factored form of the dispersion relation. A strong fourth order anharmonicity is assigned. Estimated values of optical dielectric constant and optical ionic mobility μop decrease with increasing temperature within a limited temperature region. For μop value, the effects of mobile ion scattering by optical phonons and of the expansion of interionic distance are discussed with respect to the phonon damping constant and the ionic character of the interionic force.  相似文献   

11.
Al2O3介质薄膜与纳米Ag颗粒构成的复合结构,被应用于表面增强Raman散射探测实验中,其中Al2O3介质薄膜对纳米Ag颗粒的吸收谱及增强Raman散射光谱的影响被特别关注.该复合结构的光学特性表征出纳米Ag颗粒的偶极振荡特性.从光吸收谱中可以看到,其共振吸收谱随Al2O3介质薄膜厚度增加而在整个谱域上发生红移,表明纳米Ag颗粒的周围介电常数随Al2O3介质薄膜厚度的增加而增大.采用罗丹明6G作为探针原子,6个Raman特征峰的平均增益值作为表征表面增强Raman散射衬底增益程度的量度.实验结果表明,Al2O3介质薄膜层的引入提高了纳米Ag颗粒的衬底介电常数,并引起了散射共振的增强,从而使表面增强Raman散射强度提高.  相似文献   

12.
Al2O3介质薄膜与纳米Ag颗粒构成的复合结构,被应用于表面增强Raman散射探测实验中,其中Al2O3介质薄膜对纳米Ag颗粒的吸收谱及增强Raman散射光谱的影响被特别关注.该复合结构的光学特性表征出纳米Ag颗粒的偶极振荡特性.从光吸收谱中可以看到,其共振吸收谱随Al2O3介质薄膜厚度增加而在整个谱域上发生红移,表明纳米Ag颗粒的周围介电常数随Al2O3介质薄膜厚度的增加而增大.采用罗丹明6G作为探针原子,6个Raman特征峰的平均增益值作为表征表面增强Raman散射衬底增益程度的量度.实验结果表明,Al2O3介质薄膜层的引入提高了纳米Ag颗粒的衬底介电常数,并引起了散射共振的增强,从而使表面增强Raman散射强度提高. 关键词: 纳米Ag薄膜 共振吸收 表面增强Raman散射 介电常数  相似文献   

13.
In the paper we report on picosecond-laser bulk microstructuring and stimulated Raman scattering (SRS) in type IIa single-crystal diamond in the course of multipulse irradiation at λ=532 nm wavelength using an advanced ps-laser system equipped with additional setups for on-line video imaging and photoluminescence spectra measurements. The effect of crystal orientation (relative to the incident laser beam) on (i) optical breakdown thresholds, (ii) character of bulk modifications, and (iii) generation of stimulated Raman scattering in diamond during irradiation with picosecond pulses of different durations (τ 1=10 ps and τ 2=44 ps) is studied. It is shown that the processes of laser-induced breakdown in the bulk of diamond (at the backside of the crystals) and bulk microstructure growth are governed by the dielectric breakdown mechanism. It is found that generation of high-order stimulated Raman scattering in diamond crystals has a considerable effect on the threshold of laser-induced breakdown and bulk microstructuring. Conditions of the efficient SRS lasing are determined, depending on the pulse duration and the direction ([100] and [110]) of the laser beam incidence. A method of local temperature measurements in the bulk of diamond based on the Stokes-to-anti-Stokes intensity ratio in the recorded SRS spectra is proposed, its applicability to determine a “pre-breakdown” temperature of diamond during multipulse ps-laser irradiation is discussed.  相似文献   

14.
《Current Applied Physics》2019,19(11):1195-1203
The acoustic and vibrational properties of Mn-doped (Na1/2Bi1/2)TiO3-xBaTiO3 with x = 0.05 were investigated by using Brillouin and Raman spectroscopies and compared with those of undoped crystals. The mode frequency and the half width of the Brillouin doublet of the longitudinal acoustic mode showed more drastic changes near the dielectric maximum temperature compared to the broad and diffused changes of the undoped crystals, which indicates that Mn-doping induces polar domains larger than the typical polar nanoregions formed in undoped counterpart. The acoustic anomalies were most pronounced along the <100> direction suggesting that the polarization fluctuations are anisotropic and largest along this direction. Temperature dependence of Raman spectra showed that there are two characteristics temperatures where mode splitting occurs due to local symmetry changes. The high-temperature anomaly was associated with the changes in the acoustic properties, while the low-temperature mode splitting was related to the dielectric anomaly near depolarization temperature.  相似文献   

15.
The static dielectric constant and the temperature and pressure derivatives of the static dielectric constant of KBr have been measured at several temperatures between 4·3°K and room temperature. The sample was prepared in the form of a three-terminal parallel-plate capacitor and the dielectric constant was determined from measurements of the capacitance with a high precision bridge. The dielectric constant decreases with temperature as does the magnitude of the temperature dependence and the magnitude of the pressure dependence. The data were used to calculate the fixed-volume temperature derivative of the dielectric constant. This quantity, (? ln ε/?T)v, exhibiting lattice-anharmonicity effects, decreases slightly from its room temperature value as the temperature is lowered, rises to a maximum value at about 33°K and then decreases rapidly at lower temperatures.  相似文献   

16.
The transverse complex dielectric constant of KH2PO4 is calculated using the transverse pseudo-spin model for temperatures above and below Tc. We predict the existence of a central protonic E-mode below Tc thereby explaining recently observed anomalies in the low-frequency transverse Raman spectra and the dynamical dielectric constant of KH2PO4.  相似文献   

17.
A soft chemical coprecipitation method has been proposed for synthesis of nano-sized multiferroic BiFeO3 (BFO) powders. The X-ray diffraction pattern confirms the perovskite structure of BFO and Rietveld refinement reveals the existence of rhombohedral R3c symmetry. Crystallite size and strain value are studied from Williamson–Hall (W–H) analysis. The transmission electron microscope (TEM) image shows that the particle size of BFO powders lies between 50–100 nm. 4A1 and 7E Raman modes have been observed in the range 100–650 cm?1 and a prominent band centered around 1150–1450 cm?1 have also been observed corresponding to the two-phonon scattering. Differential Thermal Analysis (DTA) shows the existence of two prominent peaks at 330 °C and 837 °C corresponding to the magnetic and ferroelectric ordering, respectively. From the temperature dependent dielectric studies, an anomaly in the dielectric constant is observed at the vicinity of Neel temperature (T N ) indicating a magnetic ordering. Also, BFO shows antiferromagnetic behavior measured from the magnetic studies.  相似文献   

18.
A detailed investigation of the polarized Raman spectrum of monoclinic hydroxyapatite (OHAp) and a careful study of the low frequency infrared spectrum of polycrystalline OHAp, is reported. Most of the spectral details of Raman scattering are consistent with the local pseudo-hexagonal C6 factor group symmetry of OHAp. However, some features, for example the absence of TO-LO splitting for particular E1 phonon geometries and the splitting of the lowest frequency Raman line, are a reflection of the centrosymmetric monoclinic lattice of OHAp. Between 0 and 50cm?1, a temperature-dependent background, having E1 symmetry, and probably associated with OH? disordering flucuations, was observed in OHAp. Both OHAp and FAp displayed low frequency Raman lines which softened with decreasing temperature. However, no evidence for a phase transition was found in either OHAp or FAp in the 12–295 K temperature range.  相似文献   

19.
Using the powder Raman technique we have measured most of the lattice vibrational modes in the Pb1?xLaxTi1?x/4O3 perovskite solid solution series. From the data for these disordered systems the clamped dielectric constant at zero frequency, ?m, was determined and compared with the clamped dielectric constant, ?cap, measured by standard capitance techniques. We find that ?cap/?m exceeds one, and increases as the transition temperature is approached from below. Strikingly, we also find similar behavior for the ‘classical’ ferroelectrics BaTiO3, LiNbO3 and LiTaO3, as well as for ferroelectrics with the tungsten bronze crystal structure.  相似文献   

20.
The polariton modes of A1, B1 and B2 species in biaxial KNbO3 are observed by near forward Raman scattering. The oscillator strengths and dielectric constants along the principal axes are determined from the polariton dispersion. The mode assignments of each species are also discussed.  相似文献   

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