Far infrared resonant magnetoabsorption in low density Si inversion layers

The density and temperature dependences of high frequency/resonant field (61.3 cm^-1, 11T) resonant magnetoabsorption data in (100) Si inversion layers at low densities are strikingly different from those observed at lower frequencies/fields. The results, which include a dramatic resonant line narrowing at high fields, are discussed in light of single-electron localization and the possibility of a cooperative electronic transition assisted by the large magnetic field.     

Far infrared emission spectra from stratospheric hydrogen peroxide

Synthetic emission spectra from two stratospheric altitude observations have been analyzed for the presence of H₂O₂ in the far infrared region. The calculations are made with a high spectral resolution (10^–3 cm^–1 or 10^–4 cm^–1) greater than those in experimental measurements which are in the region of 3.10^–3 cm^–1. Spectra cover a spectral interval between 40 and 120 cm^–1 showing the best features of H₂O₂ susceptible to observation in a stratospheric spectrum. The optimum conditions for identification have been considered. Using the variations in H₂O₂ abundance in the measurement data and photochemical models, the H₂O₂ features detection limits have been studied.     

Far infrared reflectivity of V3Si

The change in reflectivity of a transporming sample of V₃Si between 19 and 11.5 K exhibits not only the expected superconducting gap behavior (at 4 < ?ω < 6 meV) but unusual structure between 6 and 25 meV. One possible cause is the Holstein absorption process which would indicate an unexpected peak in the phonon parameter α²F at 6 ± 2 meV. Data at 19 and 30 K show that no change in reflectivity due to the structural transformation (～ 21 K) occurs to within ≈ $\text{1}\text{2}\text{\%}$ over the same energy range.     

Surface quantum oscillations in tellurium inversion layers

We report results and the analysis of properties of the two-dimensional inversion layer in the [0001] plane at the surface of tellurium, showing special features associated with the dispersion relation of the conduction band of tellurium.     

High field magnetoconductivity of Si inversion layers

The transverse magnetoconductivity (σ_χχ) of electron inversion layers on (100) Si is measured in magnetic fields up to 220 kG at temperatures from 4.2 to 1.6 K. The dependence of σ_χχ on T, H, and the electric field along the inversion layer suggests that immobile electrons between two Landau subbands are to a large extent localized out of the top of the lower subband. Fine structure, which may be indicative of inhomogeneities of electronic origin, is observed in σ_χχ vs electron density.     

Radon inversion of plasma emission

An analytical inversion of plasma spectral emission using the Radon transform is discussed for a plasma with a constant coefficient of absorption and a model displaced gaussian as the spatial distribution of its coefficients of emission.     

A plasma resonance study of valley transfer in (001) Si inversion layers

We observed the two-dimensional plasmons of the two-component electron plasma in the (001) Si-inversion layer resulting from simultaneous population of the [001] valley, E₀, and the [010] valley, E₀′, subbands under a compressional uniaxial stress along [010]. Our data show an onset of electron transfer from E₀ to E₀′ at X = (1.4 ± 0.1) kbar for n = 1.67 × 10¹² cm^?2 and X = (1.2 ± 0.2) kbar for n = 2.60 × 10¹² cm^?2, consistent with the theory of Takada and Ando that includes the electron-electron correlation effects.     

Z箍缩等离子体振荡引起的电磁脉冲辐射

从理论上研究了Z箍缩过程中单模的等离子体振荡引起的电磁脉冲辐射。当模式扰动的相速度大于真空中的光速时,电磁脉冲辐射具有类似于切伦科夫辐射的角分布特征,并且随着相速度的增大这种定向辐射特征越显著;不同波长的电磁辐射也具有不同的角分布特征,短波长的电磁脉冲具有更好的定向性。电磁辐射功率强烈依赖于电子的等离子体振荡频率和等离子体柱的半径。     

Z箍缩等离子体振荡引起的电磁脉冲辐射

从理论上研究了Z箍缩过程中单模的等离子体振荡引起的电磁脉冲辐射。当模式扰动的相速度大于真空中的光速时,电磁脉冲辐射具有类似于切伦科夫辐射的角分布特征,并且随着相速度的增大这种定向辐射特征越显著;不同波长的电磁辐射也具有不同的角分布特征,短波长的电磁脉冲具有更好的定向性。电磁辐射功率强烈依赖于电子的等离子体振荡频率和等离子体柱的半径。     

Shubnikov de Haas oscillations in n-type inversion layers on (110) and (111) surfaces of Si

Oscillatory magnetocunductance of electrons on (110) and (111) surfaces of Si have been observed. The ground-state degeneracies were determined and possible energy level schemes are proposed.     

Shubnikov-de Haas oscillations in p-type inversion layers on n-type silicon

Surface Shubnikov-de Haas oscillations have been measured in p-type channels of (110) silicon field effect transitors between 1.4 and 4.2 K in magnetic fields up to 10 Tesla. Two electric subbands were revealed and the effective masses of the holes in both bands could be determined. For one subband the dependence of the mass on the surface electric field was investigated. At low gate voltages the g-factor of the holes was measured from the spin splitting of the Landau-levels.     

Surface quantum oscillations in accumulation and inversion layers on tellurium

Surface quantum oscillations of the Shubnikov—de Haas type have been recorded in (1$\text{1}$00) planes of p-type accumulation and n-type inversion layers of tellurium. Two electric subbands are found in accumulation, which can be explained rather well on the basis of an exponential potential well. In strong inversion layers three subbands are observed. It is not yet clear, whether they must be attributed to the H₆ conduction band minimum of tellurium or whether another band minimum is involved.     

Far infrared photoconductivity from majority and minority impurities in high purity Si and Ge

The effects of intrinsic illumination on the far infrared photoconductivity of high purity Si and Ge are studied. Such illumination permits the observation of both the majority and minority impurities. One of the donors in Ge is highly sensitive to heat treatment, a result suggesting that it arises from lattice defects rather than chemical impurities.     

Density-functional calculation of subband structure of Si inversion layers under stress

An extension of the local density-functional method has been used to study the population of the non-equivalent subbands in Si (100) inversion layers under uniaxial stress. The results are in fair agreement with the cyclotron resonance measurements, have important implications for gate-voltage swept SdH-oscillations, but do not resolve the conflict between the CR- and magnetic-field swept SdH-measurements.