Collision-induced first overtone band of D2 in binary mixtures D2-X where X is Ar, Kr, and Xe

Enhancement spectra of the collision-induced absorption in the first overtone region 5500-6750 cm⁻¹ of D₂ in the D₂-Ar, D₂-Kr, and D₂-Xe binary mixtures were studied at 298 K for base densities of D₂ in the range 55-251 amagat and for partial densities of Ar, Kr, and Xe in the range 46-384 amagat. The observed spectra consist of the following quadrupolar transitions: O₂(3), O₂(2), Q₂ (J), J = 1-5 and S₂ (J), J = 0-5 of D₂. Binary and ternary absorption coefficients were determined from the integrated absorption coefficients of the band. Profile analyses of the spectra were carried out using the Birnbaum-Cohen (BC) lineshape function and characteristic lineshape parameters were determined from the analyses.     

An accurate comparison of lineshape models on H2O lines in the spectral region around 3 μm

In this paper we present the main results concerning lineshape analysis on ν₁ and ν₃ water vapor lines in the region around 3 μm. Narrow-bandwidth radiation used in this experiment was produced by difference-frequency generation in a periodically poled crystal between two near-infrared solid state lasers. We have investigated pressure broadening and shift for five H₂O absorption lines induced by collisions with Xe atoms and water vapor itself. From an accurate lineshape analysis we have obtained information on the influence of Dicke narrowing as well as correlations between velocity-changing and dephasing collisions and of speed-dependent effects. Finally, the self-broadening and pressure broadening and shift coefficients in presence of the buffer gas are furnished.     

Theory of ferromagnetic polariton linewidths

The interaction between magnons and photons which is responsible for magnetic polariton formation is expressed in terms of second quantized operators, and it is confirmed that the polariton dispersion curve obtained by diagonalizing the Hamiltonian is the same as that found classically. A term describing relaxation of the polariton by the two magnon mechanism which is often dominant in ferromagnetic resonance is then introduced. The lineshape function for inelastic light scattering is calculated by a Greens function technique. On the assumption that the lineshape can be approximated as a Lorentzian an expression for the linewidth is derived. The linewidth is zero when the polariton frequency Ω lies outside the magnon manifold, and increases discontinuously from zero at w = ¦γ¦H₀, where H₀ is the (internal) static field.     

Study of anti-clockwise bipolar resistive switching in Ag/NiO/ITO heterojunction assembly

The anti-clockwise bipolar resistive switching in Ag/NiO/ITO (Indium–Tin–Oxide) heterojunctional thin film assembly is investigated. A sequential voltage sweep in 0 → V _max → 0 → ?V _min → 0 order shows intrinsic hysteresis behaviour and resistive switching in current density (J)–voltage (V) measurements at room temperature. Switching is induced by possible rupture and recovery of the conducting filaments in NiO layer mediated by oxygen ion migration and interfacial effects at NiO/ITO junction. In the high-resistance OFF-state space charge limited current passes through the filamentary path created by oxygen ion vacancies. In OFF-state, the resistive switching behaviour is attributed to trapping and detrapping processes in shallow trap states mostly consisting of oxygen vacancies. The slope of Log I vs Log V plots, in shallow trap region of space charge limited conduction is ~2 (I ∝ V ²) followed by trap-filled and trap-free conduction. In the low-resistance ON-state, the observed electrical features are governed by the ohmic conduction.     

Admittance of metal–insulator–semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates

Metal–insulator–semiconductor structures based on n-Hg_1−xCd_xTe (x = 0.19–0.25) were grown by molecular-beam epitaxy on the GaAs (0 1 3) substrates. Near-surface graded-gap layers with high CdTe content were formed on both sides of the epitaxial HgCdTe. Admittance of these structures was studied experimentally in a wide temperature range (8–150) K. It is shown that an increase in the composition of the working layer and a decrease in temperature lead to a decrease in the frequency of transition to high-frequency behavior of the capacitance–voltage characteristics. The differential resistance of space charge region in the strong inversion increases with the composition of the working layer and for x = 0.22 and 0.25, the differential resistance is limited by the Shockley-Read generation. The values of the differential resistance of space charge region at different frequencies and temperatures were found.     

Formation of the space charge region in diffusion p-n junctions under high-density current interruption

The recovery of diodes with diffusion p-n junctions in the case of high reverse current density j is analyzed. A condition for quasi-neutrality breaking in the diffusion layers with allowance for the dependence of charge carrier mobility μ on electric field strength E is obtained that is valid for a wide range of j. The problem of formation of the space charge region in a circuit with inductance L and resistance R is reduced to a system of two ordinary differential equations. Approximation of a numerical solution to this system makes it possible to derive crude analytical relationships between interrupted current density {ie88-1}, circuit parameters, diode parameters, and parameters of a forming voltage pulse (with amplitude V _m and pulse rise time t _p). The limiting parameters of a pulser with an inductive energy storage and current interrupter based on diffusion diodes are studied. The critical density of interrupted current {ie88-2} is determined at which the field in the space charge region near the anode reaches breakdown value E _b and intense impact ionization by holes begins. The impact ionization decreases the rates of current decay and voltage increase in the space charge region. As a result, at {ie88-3}, t _p starts increasing and the overvoltage factor of the pulser decreases. The value of V _m corresponding to {ie88-4} is roughly given by {ie88-5}, where m is the number of diodes in the interrupter, ? is the permittivity of the semiconductor, {ie88-6} is the saturated drift velocity of holes, and l _p is the depth of the p-n junction (diffusion depth). Theoretical predictions are confirmed by exact numerical simulation of the recovery process and qualitatively agree with the available experimental data.     

Thickness dependence of the surface plasmon dispersion in ultrathin aluminum films on silicon

The collective excitation in Al films deposited on Si(1 1 1)-7 × 7 surface was investigated by high-resolution electron-energy-loss spectroscopy (HREELS), X-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM). At the Al film thickness d < 10 ML, the surface plasmon of Al film has only a small contribution to the observed energy-loss peaks in the long wavelength limit (q_∥≈0), while its contribution becomes significant for q_∥>d^-1. More interestingly, for thin Al films, the initial slope of the surface plasmon dispersion curve is positive at q_∥∼0, in a sharp contrast to bulk Al surface where the energy dispersion is negative. These observations may be explained based on the screening interaction of the space charge region at the Al-Si interface.     

Comparative photoemission study of the electronic properties of L-CVD SnO2 thin films

In this work we present the results of comparative XPS and PYS studies of electronic properties of the space charge layer of the L-CVD SnO₂ thin films after air exposure and subsequent UHV annealing at 400 °C, with a special emphasis on the interface Fermi level position.From the centre of gravity of binding energy of the main XPS Sn 3d_5/2 line the interface Fermi level position E_F − E_v in the band gap has been determined. It was in a good correlation with the value estimated from the offset of valence band region of the XPS spectrum, as well as from the photoemission yield spectroscopy (PYS) measurements. Moreover, from the valence band region of the XPS spectrum and PYS spectrum two different types of filled electronic band gap states of the L-CVD SnO₂ thin films have been derived, located at 6 and 3 eV with respect to the Fermi level.     

Flow equations for the ionic Hubbard model

Taking the site-diagonal terms of the ionic Hubbard model (IHM) in one and two spatial dimensions, as H₀, we employ Continuous Unitary Transformations (CUT) to obtain a “classical” effective Hamiltonian in which hopping term has been renormalized to zero. For this Hamiltonian spin gap and charge gap are calculated at half-filling and subject to periodic boundary conditions. Our calculations indicate two transition points. In fixed Δ, as U increases from zero, there is a region in which both spin gap and charge gap are positive and identical; characteristic of band insulators. Upon further increasing U, first transition occurs at U=Uc₁, where spin and charge gaps both vanish and remain zero up to U=Uc₂. A gap-less state in charge and spin sectors characterizes a metal. For U>Uc₂ spin gap remains zero and charge gap becomes positive. This third region corresponds to a Mott insulator in which charge excitations are gaped, while spin excitations remain gap-less.     

Structure and transport mechanisms of Si/porous Si n-p junctions prepared by liquid phase epitaxy

Heterojunction devices of n-Si/p-PSi were fabricated by growing n-Si films onto p-type porous Si substrates by liquid phase epitaxy. The structure of the grown films was checked using scanning electron microscopy and X-ray diffraction spectroscopy. X-ray diffraction measurements showed that the grown films have monocrystalline structure oriented along (1 1 1) direction with mainly cubic phase. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured over the temperature range from 298 to 398 K. The analysis of the dark I-V characteristics of n-Si/p-PSi at several temperatures is done to elucidate the conduction mechanisms and the evaluation of the heterojunction parameters is presented. Two carrier transport mechanisms are believed to be at the origin of the forward current. At low bias voltage (V ≤ 0.4 V) the forward current is dominated by the recombination at the porous silicon side of the space charge region. In the 0.5 V ≤ V ≤ 1.4 V region, the current transport is due to the space charge—limited current mechanism dominated by a single trapping level of energy 0.41 eV. The reverse current is considered to be mainly generated in the depletion region of the porous silicon. The capacitance-voltage results confirm an abrupt junction with a homogenous distribution of the impurities inside the space charge region. Information on the depletion region, built-in voltage and net carrier concentration were obtained from the dark C-V characteristics.     

The electronic properties of [CH(FeCl4)0.061]x

The temperature dependence of d.c. conductivity, thermopower and electron paramagnetic resonance (EPR) results on [CH(FeCl₄)_0.061]_x are reported. The d.c. conductivity and thermopower measurements indicate metallic charge transport along the polyacetylene chain interrupted by the interfibril contact resistances and also ‘dragged’ primarily by the dopant ions. The initial measurements of EPR show Dysonian lineshape with very broad linewidth (ΔH ≈ 600 G at room temperature). The temperature dependence of EPR absorption intensity implies that there exist localized magnetic moments. The observed g value (g ≈ 2.03) suggests the dopant anion is in a form of (FeCl₄)^-.     

Lineshape analysis of stimulated Raman spectra of the near‐nozzle region of free jet expansions

An anomalous lineshape of stimulated Raman spectra obtained from the region very close to the nozzle of supersonic pulsed expansions of nitrogen is presented. High‐resolution Raman spectra of the Q branch of the fundamental vibration mode of N₂ have been recorded from two different nitrogen expansions at T₀ = 295 K and P₀ = 1.5–3.5 bar, the lasers crossing the jet axis in the range z/D = 0.25–1.25, where D is the effective nozzle diameter. The combination of Doppler shifts and strong gradients of density and temperature in the near‐nozzle region yield an inhomogeneous broadening and a double peak structure of the recorded Raman line profiles. The comparison of the experimental results with the simulation of the Raman spectrum from this region provides valuable information about the near‐nozzle flow field. The lineshape described here is different from another reported previously in the literature, which is based on a depletion of the density of free molecules on the axis due to condensation. Copyright © 2009 John Wiley & Sons, Ltd.     

A study of core and valence levels in β-PbO2 by hard X-ray photoemission

The core and valence levels of β-PbO₂ have been studied using hard X-ray photoemission spectroscopy (hν = 6000 eV and 7700 eV). The Pb 4f core levels display an asymmetric lineshape which may be fitted with components associated with screened and unscreened final states. It is found that intrinsic final state screening is suppressed in the near-surface region. A shift in the O 1s binding energy due to recoil effects is observed under excitation at 7700 eV. It is shown that conduction band states have substantial 6s character and are selectively enhanced in hard X-ray photoemission spectra. However, the maximum amplitude in the Pb 6s partial density of states is found at the bottom of the valence band and the associated photoemission peak shows the most pronounced enhancement in intensity at high photon energy.     

双光子吸收的Franz-Keldysh效应

从实验上证实Hg_0.695Cd_0.305Te 光电二极管空间电荷区中存在双光子吸收的Franz-Keldysh效应.利用一个皮秒Nd:YAG激光器抽运的光学参量产生器和差频产生器作为激发光源,测量了入射波长为λ₀=7.92μm的脉冲激光所激发的光响应随入射光强的变化关系.脉冲光响应峰值强度随入射光强的增大呈现二次幂函数增强趋势.采用等效RC电路模型将脉冲光伏信号峰值与入射光强相关联,得到空间电荷区中强电场下单光束 关键词： Franz-Keldysh效应 碲镉汞 双光子吸收 脉冲光伏信号     

Effective carrier lifetime and base-widening in shortp + nn +-diodes

The paper shows the charge storage behavior of short psn-silicon diodes under the condition of quasi-stationary equilibrium. Recombination in such diodes in the region of high current injection is characterized by an effective lifetime τ _F which may be determined simply by measuring the chargeQ _s stored in the forward biased diode. For short base widthsw _B the recombination in the weaklyn-doped middle region is negligibly small in relation to that in the high-doped contacts. The effective lifetime of the charge carriers injected into the middle region is, except for an additive quantity, identical with the mean transit timeT $$\tau _F = T + T_0 .$$ The injected charge carriers travel without recombination during a transit timeT through the base widthw, given by the doping profile, and then recombine in the high-doped contacts. A parameterw ₀ interpreted as ‘base-widening’ leads in a simplified concept to an effective storage regionw _eff =w+w ₀. The parameterw ₀ can be associated in the experiment with an additional storage effect in then ⁺-substrate. The storage effects in all three layers of the psn-structure are discussed theoretically.     

Band structure of GaxIn1−xP alloys

An example of a systematic study of band structrue of alloys by electroreflectance technique is presented. Preliminary experimental analysis of lineshape convinced us of the good fitting of the three points method at room temperature. Electroreflectance spectra were measured at room temperature in the whole range of composition. The variations of E₀, E₁, E'₀, E₂ energies with composition are reported and compared with results of band structure calculation by the dielectric two bands method including the effect of disorder. The Γ-X crossover point is accurately determined. Inversely, electroreflectance technique is shown to be an interesting method for determining the composition of the alloys and to control macroscopic homogeneity.     

Final state effect for Au 4f line from gold-nano-particles grown on oxides and HOPG supports

The effect of a positive charge left to a small metal particle immediately after photoemission, so called the final state effect is studied for Au 4f binding energy (E_B) shifts. The size and shape of Au nano-particles were determined by high-resolution medium energy ion scattering combined with scanning electron microscopy of a field emission type. The shape of Au nano-particles is well approximated by a partial sphere with diameter d and height h. It is found that the E_B shift is well expressed as number of atoms per particle (n_A) and independent of support species. The E_B shift changes dramatically at a critical n_A value of ∼70 atoms, where metal-nonmetal transition takes place. In the nonmetal region, the E_B shift increases steeply almost exponentially with decreasing n_A and in contrast, gradually decreases with increasing n_A in the metallic region. The effect of the positive charge of an Au 4f vacancy created by photoemission is expressed by the relaxation time τ and the effective charge +αe when the photoelectron just leaves the Au particle surface (e: electron charge, α < 1).     

Calculation of transverse and longitudinal space charge effects within the framework of the fully six-dimensional formalism

In the following report we describe a method for calculating the envelope of a particle bunch in linear coupled storage rings and transport systems in the presence of transverse and longitudinal space charge forces using the (canonical) variablesx, p _x ,z, p _z , σ=s?v ₀·t,p _σ=ΔE/E ₀ of the fully six-dimensional formalism. This work is an extension of earlier calculations on transverse space charge forces [1] to include the synchrotron oscillations. The extension is achieved by defining a 6-dimensional ellipsoid in thex?p _x ?z?p _z ?σ?p _σ space. The motion of this ellipsoid under the influence of the external fields and the instantaneous space charge forces can be described by six generating orbit vectors which can be combined into a 6-dimensional matrixB(s). This “bunch-shape matrix”,B(s), contains complete information about the configuration of the bunch. The solution of the equations of motion is carried through in the thin lens approximation. The formalism can also encompass acceleration by cavity fields.     

Conduction electron spin resonance as a probe of zinc diffusion in lithium films

CESR is used to measure the maximum solubility C₀ and the diffusion constant D of zinc in lithium. The sample is a bimetallic layer obtained by thermal evaporation. The first deposited metal (zinc) is 300 Å thick, the second (lithium) 2μm thick. We analyze the resonance lineshape, taking into account the zinc diffusion via the Fick theorem. From the variations of the Li resonance linewidth as a function of time, we measure C₀ = 50 ppm and D = 160 Ų sec^-1 at room temperature.     

Electrical properties of SrBi2(Nb0.5Ta0.5)2O9 ceramics

Aurivillius SrBi₂(Nb_0.5Ta_0.5)₂O₉ (SBNT 50/50) ceramics were prepared using the conventional solid-state reaction method. Scanning electron microscopy was applied to investigate the grain structure. The XRD studies revealed an orthorhombic structure in the SBNT 50/50 with lattice parameters a=5.522 Å, b=5.511 Å and c=25.114 Å. The dielectric properties were determined by impedance spectroscopy measurements. A strong low frequency dielectric dispersion was found to exist in this material. Its occurrence was ascribed to the presence of ionized space charge carriers such as oxygen vacancies. The dielectric relaxation was defined on the basis of an equivalent circuit. The temperature dependence of various electrical properties was determined and discussed. The thermal activation energy for the grain electric conductivity was lower in the high temperature region (T>303.6 °C, E_a−ht=0.47 eV) and higher in the low temperature region (T<303.6 °C, E_a−lt=1.18 eV).