Heat capacity and resistivity of Sm0.55Sr0.45MnO3 in magnetic fields of up to 26 kOe

Heat capacity and resistivity of Sm_0.55Sr_0.45MnO₃ ceramics were measured over the temperature range 80–300 K in magnetic fields of up to 26 kOe. These quantities show anomalies caused by the magnetic and structural phase transitions. The critical temperature T _c and the heat capacity jump ΔC _p (T _c ) at T _c increase with increasing applied magnetic field H, while the resistivity decreases. The temperature dependences of the measured quantities show hysteresis, which is strongly suppressed in a field of 26 kOe but is sensitive nor to the temperature range neither to the rate of temperature change. The hysteresis of the heat capacity and resistivity of Sm_0.55Sr_0.45MnO₃ is caused by a change in T _c with changing lattice parameters upon second-order structural phase transition. The results are discussed in terms of the electron phase separation model.     

Electrical conduction and critical magnetic field for superconductivity of a Nb3Se4 single crystal

With respect to the quasi-one dimensionality of single crystals of Nb₃Se₄, the electrical resistivity from 1.3 to 320 K and the critical magnetic field for superconductivity are measured. The resistivity along the Nb-chain direction is represented as a sum of a temperature independent and an intrinsic temperature dependent term. The temperature dependence of the intrinsic resistivity subjects to T³ form between 10 and 80 K above which it tends to a T linear form. The critical magnetic field is proportional to the temperature difference from the transition temperature. Its dependence is well fitted by the elliptical fluxoid model of Ginzburg-Landau theory. The ratio of the parallel and the perpendicular to the c-axis is 5.7.     

Giant magnetoresistance in Ce-doped manganite systems

The fascinating properties like giant magnetoresistance (GMR) effect, metal-insulator transition, charge ordering phenomenon etc. have made the divalent ion doped RMnO₃ (R = rare-earth elements) an attractive system for investigation. Resistivity of these compounds shows a peak near the ferromagnetic transition temperature (T _c ). The application of magnetic field inhibits the spin-disorder scattering and the resistivity decreases drastically. Keeping electrondoped superconductor Nd_2?x Ce _x CuO₄ in mind we have doped RMnO₃ (R = La, Pr, Nd) with tetravalent Ce ion. These compounds are very susceptible to the annealing treatment and belong to the orthorhombic perovskite phase. They show a very high value of resistivity at the peak and under the magnetic field the GMR effect is observed. For La_0.7Ce_0.3MnO₃ and Pr_0.7Ce_0.3MnO₃ the magnetoresistance ratio reaches about 54% and 82.5% respectively at 7.7 T. With the increase of the temperature the magnetic state changes from ferromagnetic to paramagnetic regime. This magnetic transition is not very sharp and the resistivity peak appears at a temperature higher than T _c .     

Anomalous resistivity maxima in some magnetic systems

The electrical resistivity of the metallic magnetic system with a periodic array of non-interacting localized spins has been calculated by employing the T-matrix formulation. It has been shown that only the spin-flip part of the T-matrix contributes to the resistivity. Within the Suhl and Wong approximation, our calculation shows that a resistivity maximum in the resistivity-temperature curve appears at low temperature. This result qualitatively explains the anomalous resistivity maxima in Pr_xLa_1-xSn₃ and Tb_xY_1-xAs. It can also be applied to interpretate the similar anomalous resistivity maxima in concentrated and diluted CeAl₃.     

Electrical resistivity in intermetallic equiatomic RPt compounds with R  La,Pr, Nd,Gd, Tb,Dy, Ho and Er

We present the electrical resistivity measurements of equiatomic RPt compounds, with R  La, Pr, Nd, Gd, Tb, Dy, Ho and Er, which crystallize into two different orthorhombic structures. The different contributions to the total resistivity were separated. From the phonon contribution ϱ_p we estimated the Debye temperature θ_D of the different compounds. Except for GdPt, the increase of the magnetic resistivity above T_c arise from crystal field effects which are larger than those calculated in the point charge model. The paramagnetic Curie temperature and the saturated magnetic resistivity follow approximately the de Gennes law and allowed us to estimate effective mass and the exchange constant through the series.     

Oxygenation-induced two peaks in the self-doped La0.9MnO3+δ compounds

A series of self-doped La_0.9MnO_3+δ compounds have been fabricated by the solid-state reaction method with different post-annealing and oxygenation processes. The temperature dependence of resistivity measured at several magnetic fields indicated that all of these samples have an insulator–metal transition with a large negative colossal magnetoresistance (CMR) ratio. The resistivity, maximum CMR ratio and peak position are dominated by the oxygen content. As the oxygen content increases, the resistivity decreases, the peak position shifts to higher temperature and the maximum CMR ratio increases, respectively; meanwhile the peak number in the R–T curve is changed from 1 to 2, then from 2 to 1. The temperature dependencies of magnetization and specific heat show the evidence of magnetic phase transition in these samples. We think that two peaks contributed by the different oxygen-induced ferromagnetic phases resulted in the phase separation of the sample.     

Regularities in temperature,magnetic field and pressure effect on the resistive properties of magnetic semiconductors

The influence of hydrostatic pressure, magnetic field and temperature on resistivity behaviour of bulk and film samples La_0.9Mn_1.1O₃ and La_0.56Ca_0.24Mn_1.2O₃ at action of magnetic field and temperature has been analysed. It is established that the maximum of magnetoresistive and the revealed baroresistive, magnetobaroresistive effects coincide at the same temperature T_pp. This temperature is equal to the “metal-semiconductor” phase transition temperature T_ms. “Cooling” and “heating” effects of pressure and magnetic field have been revealed. A mutual correspondence of T–P–H (6.2 K, 1 kbar, 2.7 kOe) influence on polycrystalline sample La_0.9Mn_1.1O₃ resistivity has been determined. The linear change of T_ms(P) and T_ms(H) in La_0.9Mn_1.1O₃, La_0.56Ca_0.24Mn_1.2O₃ resistivity have been found. An importance of the regularities of elastic-deforming correspondence of T–H–P influence on magnetic, resistivity properties, phase transitions and effects was elucidated and explained. An alternating influence of T–H–P and its role in resistivity has been pointed. A correlation between structural, elastic and resistive properties is specified.     

Physical properties and anisotropies of the RNiGe3 series (R = Y, Ce-Nd, Sm, Gd-Lu)

We have studied RNiGe₃ (R=Y, Ce-Nd, Sm, Gd-Lu) single crystals by measuring crystal structure and stoichiometry, magnetic susceptibility, magnetization, electrical resistivity, magnetoresistance, and specific heat. Clear anisotropies as well as antiferromagnetic ordering in the RNiGe₃ series (R=Ce-Nd, Sm, Gd-Tm) have been observed above 1.8 K from the magnetic susceptibility. A metamagnetic transition in this family (except for R=Sm) was detected at 2 K for applied magnetic fields below 70 kOe. The electrical resistivity of this series follows metallic behavior in the high temperature region. Below the antiferromagnetic ordering temperature a significant anisotropy is exhibited in the resistivity and magnetoresistance for different current directions. The anisotropic magnetic, transport, and thermal properties of RNiGe₃ compounds are discussed in terms of Ni site occupancy as well as a combination of the effect of formation of a magnetic superzone gap and the crystalline electric field.     

Electrical-resistivity noise in Ni76Mn24 amorphous film

Magnetoresistance measurements were carried out on amorphous Ni₇₆Mn₂₄ film in the temperature range 1.5–250 K up to magnetic fields of 120 kG, A giant resistivity noise has been observed even in higher magnetic fields, especially at about T = 70 K. Some possible mechanisms are discussed to account for the observed resistivity fluctuations.     

Magnetic and electrical transport properties in the self-doped manganite La0.9Mn0.9M0.1O3 (M=Mn,Zn and Ti)

The magnetic and electrical transport properties of La_0.9Mn_0.9M_0.1O₃ (M=Mn, Zn and Ti) were investigated. The temperature and magnetic field dependence of electrical resistivity (ρ) and dc magnetization were studied. All the compounds are found in rhombohedral structure. The excess oxygen in all three compounds was detected through iodometric titration. A modification in resistivity is observed when M=Mn is replaced by M=Zn and Ti. The high temperature resistivity above T_C follow variable range hopping model for both Zn and Ti compounds. For Zn doping, the observation of large field-cool effect and decrease in resistivity at room temperature and is assumed to be due to the implant of Mn⁴⁺ in Mn³⁺ matrix, which favor Mn³⁺/Mn⁴⁺ double exchange. The ferromagnetic behavior below T_C for the compound with M=Ti is correlated to the excess oxygen in it, which implants Mn⁴⁺ and thus incorporates ferromagnetic interactions. The substitutions lead to a reduction of T_c and magnetization.     

Large negative magnetoresistance in thiospinel CuCrZrS4

We report on large negative magnetoresistance observed in ferromagnetic thiospinel compound CuCrZrS₄. The electrical resistivity increased with decreasing temperature according to the exp(T₀/T)^1/2, an expression derived from variable range hopping with strong electron-electron interaction. The resistivity under a magnetic field was expressed by the same form with the characteristic temperature T₀ decreasing with increasing magnetic field. Magnetoresistance ratio ρ(T,0)/ρ(T,H) is 1.5 for H=90 kOe at 100 K and increases divergently with decreasing temperature reaching 80 at 16 K. Results of magnetization measurements are also presented. A possible mechanism of the large magnetoresistance is discussed.     

Anomalous electrical properties of linear chain mercury compounds

The electrical resistivity of Hg_2.86AsF₆ has been studied as a function of temperature. At room temperature, the resistivity along the chain direction is 10^?4 Ω-cm with an anisotropy of about 10². This incommensurate linear chain system remains metallic at low temperatures with resistance ratio ?_ab(300 K)/ ?_ab(1.4 K) ? 3000 and still increasing with no apparent sign of residual resistivity. A large anisotropic magnetic field dependence of the resistivity is observed below 30 K. Near 4 K, the c-axis resistance drops abruptly more than three orders of magnitude, apparently to zero, while ?_ab is continuous. The c-axis transition is suppressed in a small magnetic field.     

Low temperature resistivities of FexNi80-xP14B6 metallic glasses

The resistivities of six Fe_xNi_80-xP₁₄B₆ alloys have been measured between 1.5 and 50 K. It is found that the resistivity variations both below and above the resistivity minima depend on the transition metal composition. The room temperature coefficients of the resistivity indicate the existence of the magnetic contribution to the resistivity.     

Effect of Cr doping in the bilayer manganite La1.4Sr1.6Mn2O7

The effect of Cr doping on magnetic and electrical properties in the bilayer manganites La_1.4Sr_1.6(Mn_1−yCr_y)₂O₇ (y=0-0.1) has been investigated. When y≤0.025, Cr doping enhances the three-dimensional magnetic transition temperature T_C and the insulator-metal transition temperature T_IM as well as decreases the peak resistivity at T_IM, and the saturated magnetization decreases slightly. When y≥0.035, T_IM decreases gradually accompanied by the increase of peak resistivity, but T_C remains nearly constant, and the saturated magnetization decreases heavily. In the whole doping region, the two-dimensional magnetic transition temperature T^? monotonously decreases with an increasing of Cr doping level. These results can be explained by considering different magnetic (including ferromagnetic and antiferromagnetic) interactions between Mn ions and Cr ions.     

Electrical resistivity and magnetoresistance of CeB6

Electrical resistivity and magnetoresistance of CeB₆ single crystal have been measured in the temperature range from 1.3 to 300 K under the magnetic field up to 85 kOe. Three characteristic phases are distinguished consistently with other measurements. The Kondo like behaviour in the resistivity observed in the high temperature phase is fitted by the conventional form for the dilute Kondo state with the Kondo temperature T_K = 5 ～ 10K and the unitarity limit resistivity $\text{?}{}_{\mathrm{u}}\text{? 110 μΩ}$ cm/Ce-atom. The negative magnetoresistance in the middle phase is stronger with increasing magnetic field and with decreasing temperature suggesting rapid destruction of the Kondo state. The magnetoresistance in the low temperature phase exhibits some anomalies suggesting sub-phases corresponding to several kinds of spin ordering.     

Kinetic effects in manganites La1 − x Ag y MnO3 (y ≤ x)

We have measured the resistivity, magnetoresistance, and thermopower of ceramic manganite samples La_{1 ? x} Ag _y MnO₃ (y ≤ x) doped with silver as functions of temperature (4.2–350 K) and magnetic field (up to 26 kOe). A metal-insulator phase transition is observed in all investigated samples at temperatures close to room temperature. The behavior of the resistivity and thermopower in the high-temperature paramagnetic region is interpreted using the concept of small radius polaron; the activation energy decreases with increasing doping level. The resistivity in the low-temperature ferromagnetic region is approximated by the expression ρ_FM(T) = ρ₀ + AT ² + BT ^4.5 presuming the existence of electron-electron and electron-magnon interactions. A resistivity minimum and a strong magnetoresistive effect are observed at low temperatures. The latter effect is associated with scattering of charge carriers at grain boundaries, which are antiferromagnetically ordered relative to one another. The temperature dependence of thermopower in the magnetically ordered phase is described in the framework of a model taking into account the drag of charge carriers by magnons.     

Low temperature resistivity minimum and its correlation with magnetoresistance in La0.67Ba0.33MnO3 nanomanganites

A systematic investigation of structural, magnetic and electrical properties of nanocrystalline La_0.67Ba_0.33MnO₃ materials, prepared by citrate gel method has been undertaken. The temperature-dependant low-temperature resistivity in ferromagnetic metallic (∼50 K) phase shows upturn behavior and is suppressed with applied magnetic field. The experimental data (<75 K) can be best fitted in the frame work of Kondo-like spin-dependant scattering, electron-electron and electron-phonon interactions. It has been found that upturn behavior may be attributed to weak spin disorder scattering including both spin polarization and grain boundary tunneling effects, which are the characteristic features of extrinsic magnetoresistance behavior, generally found in nanocrystalline manganites. The variation of electrical resistivity with temperature in the high temperature ferromagnetic metallic part of electrical resistivity (75K<T<T_P) has been fitted with grain/domain boundary, electron-electron and magnon scattering mechanisms, while the insulating region (T>T_P) of resistivity data has been explained based on adiabatic small polaron hopping mechanism.     

Large room temperature magnetoresistance in YSZ doped La0.67Ba0.33MnO3 composite

The temperature dependence of the resistivity for composite samples of (1−x)La_0.67Ba_0.33MnO₃+xYSZ(LBMO/YSZ) with different YSZ doping level of x has been investigated in a magnetic field range of 0-7000 Oe, where the YSZ represents yttria-stabilized zirconia (8 mol% Y₂O₃+92 mol% ZrO₂). With increasing YSZ doping level, the range of 0-10%, the metal-insulator transition temperature (T_P) decreases. However, the resistivity, specially the low temperature resistivity, increases. Results also show that the YSZ doping level has an important effect on a low field magnetoresistance (LFMR). In the magnetic field of 7000 Oe, a room temperature magnetoresistance value of 20% was observed for the composite with a YSZ doping level of 2%, which is encouraging for potential application of CMR materials at room temperature and low field.     

Magnetotransport and magnetoelastic effects in Co-doped La0.7Sr0.3MnO3 nanocrystalline perovskites

La_0.7Sr_0.3Mn_1−xCo_xO₃ (x=0, 0.05, 0.1) nanoparticles, prepared by sol-gel method, were studied by means of X-ray diffraction, transmission electron microscopy, resistivity, magnetoresistance, thermal expansion and magnetostriction measurements. Results show that partial substitution of Mn by Co leads to a reduction in lattice parameters, enhancement of resistivity and room temperature magnetoresistance MR, decrease of metal-insulator transition temperature T_MI and T_C, an increase in thermal expansion coefficient, volume magnetostriction and anisotropic magnetostriction. The latter increases about one order of magnitude with 10% Co substitution. In comparison with Mn ions, the Co ions possess higher anisotropy energy, larger magnetostriction effect, smaller ionic size and spin state transitions with increase in temperature and magnetic field; this suggests that Co substitution leads to double-exchange interaction weakening, resulting in suppression of ferromagnetic long-range order and metallic state and increase of magnetic anisotropy. Furthermore, our samples have a relatively lower T_MI and T_C, higher resistivity and MR, compared with the reported values for similar compounds with larger particle sizes. This is attributed to the nanometric grain size and spin-polarized tunneling between neighboring grains.     

Double-peak resistivity transport properties of La0.67Ca0.33MnO3 ceramics

Polycrystalline samples of La_0.67Ca_0.33MnO₃ were prepared by solid-state reactions by varying the pelletization force and the sintering temperature. Lowering the sintering temperature gave rise to smaller grains and increased the overall resistivity of the ceramic. Partial melting was observed in the ceramics sintered at higher temperatures (1400-1500 °C). Additionally, these ceramics showed two distinct resistivity peaks. The resistivity peak near the magnetic transition (T_C) was sharp, whereas the second peak was a broad one observed below T_C.