共查询到20条相似文献,搜索用时 0 毫秒
1.
2.
Results are given on experiments on the effect of X-rays on the conductivity and concentration of charge carriers and their mobility in monocrystalline silicon with electron and hole conductivity.It is shown that changes in the parameters studied due to X-rays depend on the intensity of the irradiation and are similar in hole and in electron silicon. 相似文献
3.
The results of single-probe studies of thick and thin silicon p-n junctions are described. The electric fields in a diode with a p+-n junction and in a stabilitron with a p-n junction in the forward and reverse directions are studied. Measurements are made at various currents and temperatures. The p-n junctions are analyzed on the basis of the probe measurements. 相似文献
4.
5.
I. Solomon 《Solid State Communications》1976,20(3):215-217
Like the spin-denendent photoconductivity in pure silicon, the current of a silicon n+-p junction is found to be affected by electron spin resonance. The experiment shows that the same centers are responsible for the recombination in the diode and in pure silicon, that only the recombination in the space-charge region of the junction is spin-dependent and that the effect in this region is very large. A tentative model for the electron-hole recombination in silicon is proposed. 相似文献
6.
7.
8.
9.
10.
11.
We present the results of studies on the influence of deep levels, due to dislocations in electronic-grade silicon, on the lifetime of minority carriers and on the current-voltage and capacitance-voltage characteristics of p-n junctions. The parameters of the deep levels were determined by means of dynamic spectroscopy. The carrier lifetime in the high-resistance region of the p-n junction correlates well with the dislocation density and varies from 10–7 sec to 3 · 10–8 sec when the dislocation density Nd varies from 107 cm–2 to 5 · 103 cm–2. The voltage across the p-n junction at a high level of injection varies 1.6 to 6.2 v as a function of Nd. The ionization energy of deep levels associated with dislocation in silicon is 0.44 and 0.57 eV, measured from the bottom of the conduction band.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 81–84, January, 1988. 相似文献
12.
The effect of adsorbed copper and gold on the band bending, the steady-state photoconductivity, and the field-effect mobility in n-type GaA s has been studied. The light and electrical characteristics of electroluminescent p-n junctions have also been studied. It is shown that doping the GaA s surface with Cu and Au leads to an increase of the depleting band bending and to a decrease in the field-effect mobility. Copper, adsorbed at the surface of slices before diffusion, leads to a reduction of the radiative intensity of the p-junctions prepared on GaA s with an electron concentration of 1–6·1017 cm–3, to a decrease in the cutoff voltage, and to an increase in the differential resistance of the forward branch of the volt-ampere characteristics. It is proposed that in the region of the experimental current (5·10–2-10–2) mA the presence of Cu in the electroluminescent p-n junctions leads not to a change in the injection mechanism but to an increase in the series resistance of the p-n junction.Translated from Izvestiya VUZ. Fizika, No. 12, pp. 72–77, December, 1973. 相似文献
13.
We have observed, for the first time, spin dependent trapping in a silicon grain boundary. The results are quantitatively explained in terms of paramagnetic “dangling bond” interface traps and a majority carrier thermionic emission model. This is a sensitive and informative probe of defects in grain boundaries. 相似文献
14.
15.
16.
M. Giesen R.J. Phaneuf E.D. Williams T.L. Einstein H. Ibach 《Applied Physics A: Materials Science & Processing》1997,64(5):423-430
Received: 22 November 1996/Accepted: 17 December 1996 相似文献
17.
A calculation is made of the sensitivity to shear deformations of the tunnel current in tunnel p-n junctions of gallium arsenide. The approximation of high hole energies (¦E-Ev¦) was used in the calculation, where is the energy splitting of the branches of light and heavy holes at the center of the Brillouin zone produced by the action of shear deformations. The effect of hydrostatic and uniaxial pressure on the tunnel current with the p-n junction oriented parallel to the (100) and (111) crystallographic planes was studied experimentally. Satisfactory agreement was obtained between the calculated and experimental values of the coefficients of the piezotunnel current.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 134–139, March, 1977.In conclusion, the authors express their gratitude to S. S. Shchegol' for help in fabricating the expitaxial p-n junctions and to G. F. Karavaev for a discussion of the work. 相似文献
18.
The slip mechanism on the surface of silicon wafers under laser irradiation was studied by numerical simulations and experiments. Firstly, the slip was explained by an analysis of the generalized stacking fault energy and the associated restoring forces. Activation of unexpected {110} slip planes was predicted to be a surface phenomenon. Experimentally,{110} slip planes were activated by changing doping concentrations of wafers and laser parameters respectively. Slip planes were {110} when slipping started within several atomic layers under the surface and turned into {111} with deeper slip.The scale effect was shown to be an intrinsic property of silicon. 相似文献
19.
H. Lozykowski 《Czechoslovak Journal of Physics》1963,13(2):164-171
Electroluminescent radiation at p-n junctions and the photovoltaic effect in ZnSe monocrystals were investigated. The p-n junctions were prepared by melting dots of indium on p-type ZnSe (ZnSe contained Cu impurities).The measurements were made at room temperature and at –150°C. The acceptor level depths estimated from a maximum emission are in accordance with the data in the literature.The decay time of electroluminescence measured at –150°C is 2·1×10–6 sec. In sunlight a photovoltage of about 1·1 V was observed.I wish to thank Prof. Dr A. Jablonski for his interest in this problem. 相似文献
20.
《Infrared physics》1993,34(3):281-287
Lead telluride epilayers and p-n junctions were grown on silicon substrates by hot wall epitaxy in order to construct monolithic infrared (IR) detectors arrays, using II-a fluorides as buffer layers. Schottky barriers were also made in the same epilayers to compare the figures of merit. The p-n junctions had performances comparable with the metal barriers and both devices had noise sources in addition to the expected thermal and background ones. 相似文献