The effect of X-rays on the electrophysical properties of silicon and silicon p-n junctions

Results are given on experiments on the effect of X-rays on the conductivity and concentration of charge carriers and their mobility in monocrystalline silicon with electron and hole conductivity.It is shown that changes in the parameters studied due to X-rays depend on the intensity of the irradiation and are similar in hole and in electron silicon.     

Probe studies of silicon p-n junctions

The results of single-probe studies of thick and thin silicon p-n junctions are described. The electric fields in a diode with a p⁺-n junction and in a stabilitron with a p-n junction in the forward and reverse directions are studied. Measurements are made at various currents and temperatures. The p-n junctions are analyzed on the basis of the probe measurements.     

Spin-dependent recombination in a silicon p-n junction

Like the spin-denendent photoconductivity in pure silicon, the current of a silicon n⁺-p junction is found to be affected by electron spin resonance. The experiment shows that the same centers are responsible for the recombination in the diode and in pure silicon, that only the recombination in the space-charge region of the junction is spin-dependent and that the effect in this region is very large. A tentative model for the electron-hole recombination in silicon is proposed.     

Effect of deep dislocation levels in silicon on the properties of p-n junctions

We present the results of studies on the influence of deep levels, due to dislocations in electronic-grade silicon, on the lifetime of minority carriers and on the current-voltage and capacitance-voltage characteristics of p-n junctions. The parameters of the deep levels were determined by means of dynamic spectroscopy. The carrier lifetime in the high-resistance region of the p-n junction correlates well with the dislocation density and varies from 10^–7 sec to 3 · 10^–8 sec when the dislocation density N_d varies from 10⁷ cm^–2 to 5 · 10³ cm^–2. The voltage across the p-n junction at a high level of injection varies 1.6 to 6.2 v as a function of N_d. The ionization energy of deep levels associated with dislocation in silicon is 0.44 and 0.57 eV, measured from the bottom of the conduction band.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 81–84, January, 1988.     

The effect of adsorbed impurities on the surface properties of GaAs and the characteristics of electroluminescent p-n junctions

The effect of adsorbed copper and gold on the band bending, the steady-state photoconductivity, and the field-effect mobility in n-type GaA s has been studied. The light and electrical characteristics of electroluminescent p-n junctions have also been studied. It is shown that doping the GaA s surface with Cu and Au leads to an increase of the depleting band bending and to a decrease in the field-effect mobility. Copper, adsorbed at the surface of slices before diffusion, leads to a reduction of the radiative intensity of the p-junctions prepared on GaA s with an electron concentration of 1–6·10¹⁷ cm^–3, to a decrease in the cutoff voltage, and to an increase in the differential resistance of the forward branch of the volt-ampere characteristics. It is proposed that in the region of the experimental current (5·10^–2-10^–2) mA the presence of Cu in the electroluminescent p-n junctions leads not to a change in the injection mechanism but to an increase in the series resistance of the p-n junction.Translated from Izvestiya VUZ. Fizika, No. 12, pp. 72–77, December, 1973.     

Spin dependent trapping at a silicon grain boundary

We have observed, for the first time, spin dependent trapping in a silicon grain boundary. The results are quantitatively explained in terms of paramagnetic “dangling bond” interface traps and a majority carrier thermionic emission model. This is a sensitive and informative probe of defects in grain boundaries.     

硅p-n结太阳电池对DF激光的响应

 对硅p-n结太阳电池在DF激光辐照下的响应进行了理论和实验研究。推导了p-n结反向饱和电流随温度的近似变化关系。根据该近似关系，计算了太阳电池在DF激光辐照过程中输出电压的变化曲线。计算结果和实验结果之间取得了比较好的一致性。     

硅p-n结太阳电池对DF激光的响应

对硅p-n结太阳电池在DF激光辐照下的响应进行了理论和实验研究。推导了p-n结反向饱和电流随温度的近似变化关系。根据该近似关系,计算了太阳电池在DF激光辐照过程中输出电压的变化曲线。计算结果和实验结果之间取得了比较好的一致性。     

Characterization of p-n junctions and surface-states on silicon devices by photoemission electron microscopy

Received: 22 November 1996/Accepted: 17 December 1996     

Piezotunnel current in GaAs p-n junctions

A calculation is made of the sensitivity to shear deformations of the tunnel current in tunnel p-n junctions of gallium arsenide. The approximation of high hole energies (¦E-E_v¦) was used in the calculation, where is the energy splitting of the branches of light and heavy holes at the center of the Brillouin zone produced by the action of shear deformations. The effect of hydrostatic and uniaxial pressure on the tunnel current with the p-n junction oriented parallel to the (100) and (111) crystallographic planes was studied experimentally. Satisfactory agreement was obtained between the calculated and experimental values of the coefficients of the piezotunnel current.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 134–139, March, 1977.In conclusion, the authors express their gratitude to S. S. Shchegol' for help in fabricating the expitaxial p-n junctions and to G. F. Karavaev for a discussion of the work.     

Slip on the surface of silicon wafers under laser irradiation:Scale effect

The slip mechanism on the surface of silicon wafers under laser irradiation was studied by numerical simulations and experiments. Firstly, the slip was explained by an analysis of the generalized stacking fault energy and the associated restoring forces. Activation of unexpected {110} slip planes was predicted to be a surface phenomenon. Experimentally,{110} slip planes were activated by changing doping concentrations of wafers and laser parameters respectively. Slip planes were {110} when slipping started within several atomic layers under the surface and turned into {111} with deeper slip.The scale effect was shown to be an intrinsic property of silicon.     

Electroluminescence at p-n junctions in ZnSe

Electroluminescent radiation at p-n junctions and the photovoltaic effect in ZnSe monocrystals were investigated. The p-n junctions were prepared by melting dots of indium on p-type ZnSe (ZnSe contained Cu impurities).The measurements were made at room temperature and at –150°C. The acceptor level depths estimated from a maximum emission are in accordance with the data in the literature.The decay time of electroluminescence measured at –150°C is 2·1×10^–6 sec. In sunlight a photovoltage of about 1·1 V was observed.I wish to thank Prof. Dr A. Jablonski for his interest in this problem.     

Growth of narrow gap epilayers and p-n junctions on silicon for infrared detectors arrays

Lead telluride epilayers and p-n junctions were grown on silicon substrates by hot wall epitaxy in order to construct monolithic infrared (IR) detectors arrays, using II-a fluorides as buffer layers. Schottky barriers were also made in the same epilayers to compare the figures of merit. The p-n junctions had performances comparable with the metal barriers and both devices had noise sources in addition to the expected thermal and background ones.