Dispersion of the linear electrooptic coefficient and of the non-linear susceptibility in ZnTe

The measured values and the analysis of the dispersion of the unclamped linear electrooptic coefficient r^T₄₁ in cubic ZnTe operating as optical modulator are presented. The spectral dispersion of the non-linear susceptibility d₄₁ (ω, ω, 0) is also reported and the strong dependence on the light frequency, observed for d₄₁, is interpreted in terms of the electronic contribution to the anharmonicity.     

Structural, morphological and optical properties of CuAlS2 films deposited by spray pyrolysis method

The structural, morphological and optical properties of CuAlS₂ films deposited by spray pyrolysis method have been investigated. CuAlS₂ in the form of films is prepared at different deposition conditions by a simple and economical spray pyrolysis method. The structural, surface morphology and optical properties of the films were analyzed by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM) and absorbance spectra, respectively. The films were polycrystalline, crystallized in a tetragonal structure, and are preferentially orientated along the (1 1 2) direction. Grain size values, dislocation density, and d% error of CuAlS₂ films were calculated. The optical band gap of the CuAlS₂ film was found to be 3.45 eV. The optical constants such as refractive index, extinction coefficient and dielectric constants of the CuAlS₂ film were determined. The refractive index dispersion curve of the film obeys the single oscillator model. Optical dispersion parameters E_o and E_d developed by Wemple-DiDomenico were calculated and found to be 3.562 and 12.590 eV.     

Structural,optical and dispersion characteristics of nanocrystalline GaN films prepared by MOVPE

In this work, nanocrystalline GaN film was grown on a c-plane sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). The structural and optical properties of the nanocrystalline GaN thin film were studied. The morphological and structural properties of GaN film were studied by scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. According to the X-ray diffraction spectrum, a GaN film was formed with a wurtzite structure, which is the stable phase. The optical parameters were determined using spectrophotometric measurements of transmittance and reflectance in the wavelength range 200–2500 nm. The analysis of the spectral behavior of the absorption coefficient in the intrinsic absorption region reveals a direct allowed transition with a band gap of 3.34 eV. The dispersion of the refractive index is discussed in terms of the single oscillator Wemple–Didomenico (WD) model. The single oscillator energy (E_o), the dispersion energy (E_d), the high frequency dielectric constant (ε_∞), the lattice dielectric constant (ε_L) and the free charge carrier concentration (N) were estimated. From the optical dielectric analysis, the optical conductivity, volume and surface energy loss functions were calculated. Moreover, the third-order nonlinear optical susceptibility χ⁽³⁾ was also considered.     

Refractive index, oscillator parameters and temperature-tuned energy band gap of Tl4In3GaS8-layered single crystals

Transmission and reflection measurements in the wavelength region 450-1100 nm were carried out on Tl₄In₃GaS₈-layered single crystals. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 2.32 and 2.52 eV, respectively. The rate of change of the indirect band gap with temperature dE_gi/dT=-6.0×10⁻⁴ eV/K was determined from transmission measurements in the temperature range of 10-300 K. The absolute zero value of the band gap energy was obtained as E_gi(0)=2.44 eV. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The refractive index dispersion parameters: oscillator energy, dispersion energy, oscillator strength and zero-frequency refractive index were found to be 4.87 eV, 26.77 eV, 8.48×10¹³ m⁻² and 2.55, respectively.     

Dependence of the fundamental absorption edge of CdInGaS4 on hydrostatic pressure

The optical absorption of CdInGaS₄ single crystals has been measured over a hydrostatic pressure range up to 40 kbar in the 2.0–3.0 eV photon energy range at room temperature. The interband gap for the indirect allowed transition was found to have a pressure coefficient, dEg/dP, of +6.4 × 10^-6ev/bar.     

Determination des angles d'obliquite d'un cristal liquide en phase nematique au voisinage d'une surface

Using several laser sources the dispersion of the quadrupole nonlinear tensor d⁽²⁾(CaCO₃) has been determined in the ultraviolet and visible range 265 – 592 nm. The measured dependence is in a good agreement with the predicted dispersion d⁽²⁾(CaCO₃) ~ λ^-1.     

Determination of optical constants and nonlinear optical coefficients of Violet 1-doped polyvinyl alcohol thin film

The optical properties of Violet 1-doped polyvinyl alcohol (PVA) have been investigated using Wemble and Didomenico (WD) method. The optical constants such as refractive index n, the dispersion energy E _d, the oscillation energy E ₀, the lattice dielectric constant \(\varepsilon _{\infty } \), light frequency dielectric constant ε ₀ and the ratio of carrier concentration to the effective mass N/m* have been determined using reflection spectra in the wavelength range 300–900 nm. The single- beam Z-scan technique was used to determine the nonlinear optical properties of Violet 1:polyvinylalcohol (PVA) thin film. The experiments were performed using continuous wave (cw) laser with a wavelength of 635 nm. The calculated nonlinear refractive index of the film, n ₂ = ?2.79×10^?7 cm²/W and nonlinear absorption coefficient, β = 6.31×10^?3 cm /W. Optical limiting characteristics of the dye-doped polymer film was studied. The result reveals that Violet 1 can be a promising material for optical limiting applications.     

Structural, absorption and optical dispersion characteristics of rhodamine B thin films prepared by drop casting technique

The drop casting technique has been successfully used to deposit highly uniform and good adhesion rhodamine B (Rh.B) thin films. The structural and morphological properties of Rh.B were studied by X-ray diffraction (XRD), and transmission electron microscopy (TEM), respectively. The molecular structure and electronic transitions of Rh.B were investigated by Fourier-transform infrared (FTIR) and ultraviolet-visible-near infrared (UV-VIS-NIR) spectra, respectively. The calculated Stokes shift between the excitation and emission of Rh.B reflects the displacement in potential surface between the ground and the excited states. The important absorption parameters such as molar extinction coefficient (ε_molar), the oscillator strength (f), and the electric dipole strength (q²) were also reported. The analysis of the spectral behavior of the absorption coefficient in the intrinsic absorption region reveals an indirect allowed transition with a band gap of 1.97 eV and associated phonons of 75 meV. The dispersion of the refractive index is discussed in terms of the single oscillator Wemple-Didomenico (WD) model. The single oscillator energy (E_o), the dispersion energy (E_d), the high frequency dielectric constant (ε_∞), the lattice dielectric constant (ε_L) and the ratio of the free charge carrier concentration to the effective mass (N / m^?) were estimated. From the optical constants analysis, the optical conductivity, volume and surface energy loss functions could also be calculated.     

Studies of the second-order nonlinear optical properties of cubic boron nitride

Cubic boron nitride (cBN) is a kind of artificial wide-energy-gap semiconductor crystal, which has zinc blende structure with Td symmetry. The second-order nonlinear optical properties of cBN single crystal were investigated for the first time. Using a Q-switching Nd:YAG laser, the optical rectification and the second-harmonic generation at 532 nm from cBN single crystal were observed. In order to determine the nonlinear optical coefficient of a minute-size cBN sample, a simple method based on modified transverse linear electro-optic modulation was also introduced. This approach is convenient because it is unnecessary to know the absolute intensity of a probing beam for measuring the half-wave voltage of a cBN sample. Finally, cBN’s linear electro-optic coefficient γ₄₁=1.07×10^-14 m/V and nonlinear optical coefficient d₁₄(0,ω,-ω)=1.07×10^-13 m/V were obtained. PACS 42.65.An; 42.65.Ky; 78.20.Jq     

Optical absorption and spectrophotometric studies on the optical constants and dielectric of poly (o-toluidine) (POT) films grown by spin coating deposition

In this work, a poly(o-toluidine) “POT” was synthesized by chemical oxidative polymerization method in aqueous media. High uniform and good adhesion thin films of POT have been successfully deposited by the spin coating technique. The films were characterized by X-ray diffraction (XRD) and Fourier transforms infrared (FTIR) spectroscopy. The XRD pattern of the POT shows the semi-crystalline nature of the films. FTIR studies show the information of functional groups in POT. The optical transmittance and reflectance of POT film was measured in the 200–2500 nm wavelength range. The absorption coefficient analysis shows that the optical band gaps of POT film are direct allowed transition band gaps with 1.2 and 2.6 eV. Other optical absorption parameters such as extinction molar coefficient, oscillator strength and electric dipole strength were also calculated. The dispersion parameters were determined and discussed based on the single oscillator model. According to the analysis of dispersion curves some important parameters such as dispersion energy (E_d), oscillator energy (E_o), high frequency dielectric constant ₍ε_∞) and lattice dielectric constant (ε_L) were also evaluated. Discussion of the obtained results and their comparison with the previous published data were also given. The obtained desirable results of POT thin film can be useful for the optoelectronic applications.     

New high negative dispersion photonic crystal fiber

A new high negative dispersion photonic crystal fiber is proposed. It has double-core structure. The inner core has a circle germanium-doped region. The outer core is formed by removing the 3rd ring air-holes around the core. There are two ring air-holes between the two cores, Diameter of the 1st ring air holes is bigger than that of the 2nd ring air-holes, this can make mode coupling between inner mode and outer mode and showed that the high negative PCF is the result of this structure characteristics. There are honeycomb photonic lattice in the PCF's cladding. The influence of the structure parameters deviated from the design those on the chromatic dispersion are evaluated. When the structure parameters Λ=1.50 μm, d_core=2.10 μm, d₁=0.90 μm, d₂=0.44 μm and d₃=1.04 μm, the dispersion coefficient D is −1320 ps/(nm·km) at 1550 nm. This is a new kind of chromatic dispersion compensation PCF.     

Synthesis of CdZnO thin film as a potential candidate for optical switches

Cadmium doped zinc oxide thin films have been prepared using a thermal decomposition technique. The influence of Cd as a doping agent on the structure, optical and nonlinear optical properties was carefully investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and a UV-vis spectrophotometer. A deep correlation has been found between the surface roughness and the optical properties. The roughness is found to deteriorate the nonlinear response, such that the highest nonlinear susceptibility χ⁽³⁾ is obtained for the smoothest layer. The third-order nonlinear susceptibility χ⁽³⁾ has been calculated using the Frumer model, and is estimated to be 3.37×10⁻¹⁰ esu. The dispersion of the refractive index of the prepared thin film is shown to follow the single electronic oscillator model. From the model, the values of oscillator strength (E_d), oscillator energy (E_o) and dielectric constant (ε_∞) have been determined. The conductivity has been measured as a function of the energy of the photons, revealing marginal change at energies below 3.15 eV, while above this value there is a large increase in the conductivity. This suggests that CdZnO is a potential candidate for applications in optical devices such as optical limiter and optical switching.     

Thermo-optical properties of uniaxial NaT(XO4)2 laser host crystals (where T = Y, La, Gd or Bi, and X = W or Mo)

Thermo-optic coefficients dn _o/dT and dn _e/dT were measured in tetragonal double tungstate and double molybdate crystals NaT(XO₄)₂ (where T = Y, La, Gd or Bi and X = W or Mo) by a laser beam deviation method in the spectral range 0.4–1.1 μm. Thermal expansion coefficients in the directions of a and c crystallographic axes were also measured. Analytical expressions for thermo-optic dispersion formulas were derived as series in 1/λ ². All dn/dT values for NaT(XO₄)₂ crystals were found to be negative. Their absolute values satisfy the relation |dn _e/dT| > |dn _o/dT| for crystals without Bi and |dn _o/dT| > |dn _e/dT| for crystals with Bi. A clear tendency for dn/dT values to decrease with the increase of the volumetric thermal expansion coefficient α _vol of the crystal was observed. This is related with dominant contribution of volumetric thermal expansion effect to the temperature dependence of the refractive index. Thermal coefficients of the optical path W = dn/dT + (n ? 1)α _T governing thermal lensing effect were calculated for different light propagation directions and polarizations as well as crystal athermal directions.     

Linear and nonlinear optical properties of MgO:LiTaO3

We derive new temperature dependent Sellmeier equations for the extra-ordinary and ordinary refractive indices of 0.5% MgO-doped stoichiometric LiTaO₃ crystal. The equations are based on quasi phase-matched frequency conversion measurements, as well as on interferometric measurements of the thermal expansion and thermal dispersion. These equations fit experimental data over wide spectral ranges: 0.35–6 μm for the extra-ordinary wave and 0.375–3.75 μm for the ordinary wave, from room temperature up to 200°C. The nonlinear optical measurements set lower-limit values for the d ₃₃, d ₂₂, and d ₂₄ elements of the second-order susceptibility tensor χ ⁽²⁾ of 12.9, 1.54, and 0.46 pm/V, respectively. The interferometric measurements enable one to determine the linear and quadratic expansion coefficients of 1.45762e?5 1/°C, and 2.68608e?8 (1/°C)², respectively. The Sellmeier equations are in good agreement with previously published data.     

The orbital characters and kz dispersions of bands in iron-pnictide NaFeAs

The electronic structure and orbital characters of iron-pnictide NaFeAs have been studied by polarization dependent angle-resolved photoemission spectroscopy. Some of the bands are mixed with the orbitals of opposite symmetries, which could be interpreted by the hybridization among the bands. According to the photon energy dependent experiment, the k_z dispersions of the bands that cross the Fermi energy are weak in both paramagnetic and spin density wave states. However, a band well below the Fermi level shows a k_z dispersion of 41 meV, which mainly contains the d_z² orbital.     

Optical band gap and refractive index dispersion parameters of As x Se70Te30−x (0≤x≤30 at.%) amorphous films

Amorphous As _x Se₇₀Te_30?x thin films with (0≤x≤30 at.%) were deposited onto glass substrates by using thermal evaporation method. The transmission spectra T(λ) of the films at normal incidence were measured in the wavelength range 400–2500 nm. A straightforward analysis proposed by Swanepoel based on the use of the maxima and minima of the interference fringes has been used to drive the film thickness, d, the complex index of refraction, n, and the extinction coefficient, k. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple and DiDomenico model (WDD). Increasing As content is found to affect the refractive index and the extinction coefficient of the As _x Se₇₀Te_30?x films. With increasing As content the optical band gap increases while the refractive index decreases. The optical absorption is due to allowed indirect transition. The chemical bond approach has been applied successfully to interpret the increase of the optical gap with increasing As content.     

The nonlinear optical coefficient,phasematching, and optical damage in the chalcopyrite AgGaSe2

We have made a direct measurement of the absolute nonlinear coefficient for AgGaSe₂ by phasematched second harmonic generation. The measured value is d₃₆ = (3.24 ± 0.50) × 10^?11 m/V. For CO and Co₂ lasers the observed phasematching angles for second harmonic generation and frequency mixing are within one degree of the values calculated by fitting the reported index of refraction data to Sellmeier equations. At 1.06 μm the optical damage threshold depends on the number of incident laser pulses. For 1000 pulses damage occurs at 11 MW/cm². The samples were cut from crack-free single crystal boules with absorption coefficient smaller than 0.1 cm^? at 10.6 μm.     

Dispersion of tubular modes propagating in multimode optical fibres

We have already used interferometric techniques for measuring, first, the impulse response of optical fibres and further the different times of flight of modes of a multimode fibre. Apart from time of flight, our set-up provides the intramodal dispersion of each mode (d² β/dω ²). To demonstrate, we have measured the modal dispersion difference between two tubular modes that were selectively excited in a multimode graded index fibre. For comparison, a theoretical expression has been derived, based on a ray optics approach.     

Optical and ESR analysis of the Fe acceptor in InP

Photoluminescence (PL), optical absorption, and electron spin resonance (ESR) have been applied to detect the different charge states of substitutional Fe in InP. The 3d⁶ one electron trap state is detected by the PL and optical absorption lines of the ⁵T₂?⁵E transitions, whereas the 3d⁵ neutral acceptor state is identified by its characteristics S = 5/2 ESR signal.