Upper critical fields of Nb3Ge thin film superconductors

The upper critical field H_c2(T) of the highest T_c(～23K) Nb₃Ge superconducting films has been found to be ≈370kG at 4.2K. Measurements on lower T_c films show very broad transitions reflecting nonuniformity. The H_c2(T) characteristics are consistent with other Nb₃X type II superconductors.     

Ultrasonic attenuation of surface acoustic waves in a thin film of superconducting Nb3Sn

The attenuation of 660 MHz surface acoustic waves propagating in a thin film of Nb₃Sn 5000 Å thick has been measured as a function of temperature from 4.2 K to 16 K. The A 15 Nb₃Sn, electron-beam codeposited on YZ lithium niobate and annealed at 700°C, was studied using 5.1 μm wavelength interdigital electrodes. The film revealed a transition temperature of 14.2 ± 0.1 K and using the BCS theory, an energy gap 2Δ(0) = 3.5 k_BT_c.     

Superconducting transition width in Nb3Ge with defects

The resistive superconducting transition width in Nb₃Ge after defect producing ⁴He bombardment shows unusual structure including an oscillatory variation of ? at the onset to superconductivity.     

超导材料Nb3Ge表面氧化

运用密度泛函理论计算了氧（O）在Nb3Ge表面的吸附,结果表明O倾向于吸附在Nb原子周围,并与Nb的电子轨道发生了明显的交叠,O与Nb形成兼具共价键和离子键特性的化学键。利用X射线光电子能谱对自然氧化的Nb3Ge表面进行成分分析发现：氧化层中只存在Nb的氧化物,理论计算结果与实验结果一致。由于O容易与Nb结合,最外层的Nb因逐渐氧化而耗尽,在接触势的驱使下,内部的Nb原子与最外层的Ge原子交换,最终使得Nb与O的形成氧化物在Nb3Ge表面聚集,在该氧化层下面是由于Nb的耗尽而形成的Ge聚集层。     

超导材料Nb3Ge表面氧化

运用密度泛函理论计算了氧（O）在Nb3Ge表面的吸附,结果表明O倾向于吸附在Nb原子周围,并与Nb的电子轨道发生了明显的交叠,O与Nb形成兼具共价键和离子键特性的化学键。利用X射线光电子能谱对自然氧化的Nb3Ge表面进行成分分析发现:氧化层中只存在Nb的氧化物,理论计算结果与实验结果一致。由于O容易与Nb结合,最外层的Nb因逐渐氧化而耗尽,在接触势的驱使下,内部的Nb原子与最外层的Ge原子交换,最终使得Nb与O的形成氧化物在Nb3Ge表面聚集,在该氧化层下面是由于Nb的耗尽而形成的Ge聚集层。     

Properties of Nb3Ge tapes for high field magnets

A laboratory process for long Nb₃Ge tapes fabrication by chemical vapor deposition (CVD) has been set up. The Nb₃Ge tapes which were fabricated offer the possibility of high current and high field operation at 4.2 K since the values of critical current densities, J_c, measured in high magnetic fields at 20T and 4.2K exceed 5 × 10⁴ A cm^?2 which is the generally accepted criterion for producing a superconducting magnet.     

X-ray diffraction studies on He- and Ar-irradiated Nb3Ge thin films

We have performed measurements of relative integrated X-ray intensities in order to study the influence of radiation damage on the A15 structure of superconducting Nb₃Ge. With increasing He- and Ar-ion fluence an increase of the “temperature factor” and the lattice parameter has been observed in the fluence region where the depression of the superconducing transition temperature T_c was found to occur. Both parameters do not uniquely depend on the decrease of T_c. Further a decrease of the total relative X-ray intensity is found for particle fluences in the saturation region of T_c. The results are interpreted in terms of static atom displacements statistically distributed in the irradiated volume.     

The sputtering of high Tc A15 Nb3Si and V3Ge

We report some initial results on the preparation of A15 Nb₃Si and V₃Ge using a getter sputtering technique. Under sufficiently clean conditions we observe an increase in the superconducting transition temperature. DC onsets in excess of 14 and 11 K have been observed for Nb₃Si and V₃Ge respectively. In each case a positive identification of the A15 phase has been made.     

Ultrasonic attenuation in superconducting Nb20Zr80

We have measured the low-temperature ultrasonic attenuation in quenched polycrystalline Nb₂₀Zr₈₀ at 30 and 90 MHz. The quenching process creates tunnelling states due to metastable regions of the athermal ω-phase. Our results can be explained on the basis of the interaction between electrons and tunnelling states.     

Round-robin study of Tc measurement of superconducting “Nb3Ge” thin films

To determine the reproductibility in the measurement of T_c a round-robin experiment was conducted. The samples consisted of five high T_c “Nb₃Ge” thin films. The results of this experiment show that only the midpoint of the T_c curve is reproducible to within ≈±0.2 K.     

Hybridization and bonding in transition metal compound superconductors: X-ray photoemission from crystalline and amorphous Nb3Ge.

An XPS (or ESCA) study of the high T_c crystalline and the low T_c amorphous phases of Nb₃Ge indicates a change of the Nb-Ge bonding from covalent to metallic upon the amorphous to crystalline transition. The high T_c superconductivity of Nb₃Ge does not appear to stem only from an unusually high electronic density of states at the Fermi level but rather from another property such as a resonant enhancement of the electron-phonon coupling resulting from cation-anion hybridization at E_F.     

Comment on the paper “Exafs measurements on Nb3Ge thin films” by G.S. Brown et al.

Brown et al. have reported recently that Nb₃Ge specimens showing superconducting transition temperatures less than the maximum possible value contain a “quasi-amorphous phase”. We discuss the possibility that the lower values of T_c of these specimens may be accounted for by the proximity effect due to these quasi-amorphous regions.     

高压下锗化镁的金属化相变研究

锗化镁是一种窄带半导体,压力作用可以使锗化镁导带底与价带顶的能隙变小.本文基于第一性原理计算了锗化镁在高压下的能带结构以及反萤石相(常压稳定相)和反氯铅矿相(高压相)的焓值,发现在7.5 GPa时反萤石结构锗化镁导带底与价带顶的能隙闭合,预示着半导体相转变为金属相,计算结果还预测在11.0 GPa时锗化镁发生从反萤石结构到反氯铅矿结构的相变.实验研究方面,本文采用长条形压砧在连续加压条件下测量了锗化镁高压下的电阻变化,采用金刚石对顶压砧测量了锗化镁的高压原位拉曼光谱,发现在8.7 GPa锗化镁的电阻出现不连续变化,9.8 GPa以上锗化镁的拉曼振动峰消失.由于金属相的自由电子浓度高会阻碍激发光进入样品,进而引起拉曼振动峰消失,因此我们推测锗化镁在9.8 GPa转变为金属相.     

柔性Pb(Zr_(0.53)Ti_(0.47))O_3薄膜的高温铁电特性

随着柔性电子产品的迅速发展,具有优异铁电和压电性的Pb(Zr_(0.53)Ti_(0.47))O_3 (PZT)薄膜在柔性的非易失性存储器、传感器和制动器等器件中有广泛的应用前景.同时,由于外部环境越来越复杂,具有高温稳定特性的材料和器件受到越来越多的关注.本文在耐高温的二维层状氟晶云母衬底上,用脉冲激光沉积技术制备出外延的PZT薄膜,并通过机械剥离的方法,得到柔性的外延PZT薄膜.研究了Pt/PZT/SRO异质结的铁电和压电性及其高温特性,发现样品表现出优越的铁电性,剩余极化强度(P_r)高达65μC/cm~2,在弯曲104次后其铁电性基本保持不变,且样品在275℃高温时仍然保持良好的铁电性.本文为柔性PZT薄膜在航空航天器件中的应用提供了实验基础.     

Low temperature heat-capacity measurements of V3Ga and Nb3Al

By low temperature heat capacity measurements using the a.c. technique, we show indirectly that martensitic transformations do occur in V₃Ga and Nb₃Al.     

Upper critical fields of Nb∼3Au,Nb3Au0.7Pt0.3 and Nb3Pt

Upper critical field measurements of the A15 type compounds Nb_～3Au,Nb₃Au_0.7Pt_0.3 and Nb₃Pt having T_c values of 10.7, 13.0 and 8.7K, respectively, show H_c2(0) values of 235, 295 and 125 kG, respectively. The data for the compounds containing Au fit closely calculations for a dirty type II superconductor with no paramagnetic limiting, but data for Nb₃Pt are slightly above these calculations.     

Properties of disordered Mo3Ge thin films with A15 structure

Heavy ion irradiation of A15 Mo₃Ge with the low transition temperature T_c = 1.45 K raises T_c to ? 6 K. For the first time in A15 compounds a T_c degradation (≈ 3 K) after having passed through a maximum is observed until near 3.5 K the saturation value is reached. The effects on T_c are interpreted by variations of the deduced (H'_c2, ?) density of states at the Fermi level. This picture consistently explains the T_c degradation of the high-T_c A15 compounds.     

On the high temperature transition in V2O3

Magnetic susceptibility measurements on V₂O₃ powder sample using a vibrating sample magnetometer and microbalance with special attention to the region of 500–530K are reported. The high temperature transition in this compound is discussed in the framework of two interacting Hubbard bands obtaining a good qualitative agreement with thermal variations of the properties of V₂O₃.     

低能离子对高温超导YBa_2Cu_3O_(7-δ)薄膜的表面改性和机理

低能氩离子束轰击并后退火处理的离子束表面改性,会影响高温超导薄膜的表面结构和超导特性,但是其中的深刻微观机理不清楚.本文通过连续改变离子束轰击时间,系统研究了离子束表面改性对于超导膜结构和临界电流密度的影响.通过扫描电子显微镜、X射线衍射、J_(c-scanning)测试表征样品的结构特性和超导特性,并得出内应变、氧空位缺陷等参量.研究表明,经过表面改性的钇钡铜氧(YBa_2Cu_3O_(7-δ),YBCO)薄膜,随轰击时间增加表面形貌会变得更加均匀致密,a轴晶粒消失,并且临界电流密度有了显著的提高.由化学键收缩配对模型分析得出,临界电流密度的提高与薄膜内应变增大和引发的局部YBCO结构中Cu—O键收缩有关.     

Nanostructured Ni3Sn2 thin film as anodes for thin film rechargeable lithium batteries

Thin film Ni₃Sn₂ anodes were deposited on a Cu substrate by e-beam evaporator at room temperature. The deposited films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). They were tested as anodes for thin film rechargeable lithium batteries. These film electrodes exhibited an excellent cycle performance over 500 cycles. Ni₃Sn₂ films remained without undergoing any crystallographic phase change during cycling.