Efficient diode-pumped passively Q-switched laser with Nd:YAG/Cr:YAG composite crystal

Diffusion bonded Nd:YAG/Cr:YAG composite laser crystal has been employed to perform a compact diode-pumped passively Q-switched laser. At the incident pump power of 3.3 W and pulse repetition rate of 16.3 kHz, the maximum average output of 592 mW has been obtained, corresponding to an optical-to-optical conversion efficiency of 18%. Stable passively Q-switched operation with peak power of 6.5 kW and pulse duration of 6 ns was also achieved. It has been experimentally revealed that Nd:host/Cr:YAG composite structure is a promising material for compact cost-effective Q-switched laser sources with high-peak power and short pulse duration. In addition, thermal lens effect (TLE) in the active medium and its impact on the Q-switched laser performance have been analyzed.     

Diode end-pumped self-Q-switched and mode-locked Nd,Cr：YAG /KTP green laser

We first experimentally demonstrate a laser-diode end-pumped self-Q-switched and mode-locked Nd,Cr:YAG green laser with a KTP crystal as the intra-cavity frequency doubler. The device produces an average output power of 680 mW at 532 nm. The corresponding pulse width of the Q-switched envelope of the green laser is 170±20 ns. The mode-locked pulses have a repetition rate of approximately 183 MHz and the average pulse duration is estimated to be around sub-nanosecond. It is found that the intra-cavity frequency doubling greatly improves the modulation depth and stability of the mode-locked pulses within the Q-switched envelope.     

Diode-pumped short pulse passively Q-switched 912 nm Nd:GdVO<Subscript>4</Subscript>/Cr:YAG laser at high repetition rate operation

A diode-end-pumped passively Q-switched 912 nm Nd:GdVO₄/Cr:YAG laser is demonstrated for the first time. In a concave-piano cavity, pulsed 912 nm laser performance is investigated using two kinds of Cr:YAG crystal with different unsaturated transmission (T _U) of 95% and 90% at 912 nm as the saturable absorbers. When the T _U = 90% Cr:YAG is used, as much as 2.6 W average output power for short pulsed 912 nm laser is achieved at an absorbed pump power of 34.0 W, corresponding to an optical efficiency of 7.6% and a slope efficiency of 20.3%. Moreover, 10.5 ns duration pulses and up to 2.3 kW peak power is obtained at the repetition rate around 81.6 kHz.     

Passively Q-switched mode-locking in a diode-pumped Nd:LuVO<Subscript>4</Subscript> laser with V:YAG

A passively Q-switched and mode-locked Nd:LuVO₄ laser with V:YAG at 1.34 μm was successfully demonstrated. Comparisons between c-cut and a-cut Nd:LuVO₄ lasers were experimentally made. The maximum average output power of 170 mW, the highest Q-switched pulse energy of 4.5 μJ were obtained in c-cut Nd:LuVO₄ laser. The duration of mode-locked pulse was estimated to be less than 540 ps with repetition rate of 110 MHz.     

A passively Q-switched diode pumped Yb:YAG microchip laser

A passively Q-switched diode pumped Yb:YAG microchip laser with Cr4+:YAG saturable absorber mirror is reported. The TEMoo laser pulses are obtained with 1,7-uJ pulse energy, 15-ns pulse width, 0.11-kW peak power, and a repetition rate of 2.2 kHz at 1049 nm. The doped concentration and dimension of Yb:YAG microchip crystal are 10 at.-% and 5×0.6 mm2, respectively.     

Numerical simulation of a CW-pumped Cr:YAG passively Q-switched Yb:YAG pulsed laser

A general model of a CW-pumped passively Q-switched laser is presented which considers the pump power and excitation state of the absorber. The recovery time of the absorber is affected by the Q-switched laser pulse length and repetition rate, which results in changes of the output power, peak power and pulse duration of a CW-pumped passively Q-switched solid-state laser. At low pump power, the final inversion population density alters slowly by a small amount and the effect of the absorber's finite recovery time on laser output energy can be ignored. At high pump power, the final inversion population density increases quickly with pump power increase and the output energy decreases greatly. Simulation results of a CW-pumped, Cr:YAG Q-switched, Yb:YAG laser are reported. The numerical simulation results agree with the theoretical analytical analysis.     

Passively Q-switched,high peak power Nd:YAG laser pumped by QCW diode laser

A Nd:YAG laser passively Q-switched by a Cr:YAG showed a high single pulse energy of 53.0 mJ and 5.1 MW peak power. The laser was pumped by quasi-continuous-wave diode bars from single side. The Q-switched pulse had optical-to-optical efficiency of 12% and average temporal duration of 10.4 ns when Cr:YAG with initial transmission of 9.0% was used. Intense pumping as well as very low initial transmission of the saturable absorber gave very high peak power.     

Pre-pumped passively Q-switched Nd:YAG/Cr:YAG microchip laser

A pre-pumped passively Q-switched Nd:YAG/Cr:YAG microchip laser is demonstrated with a peak power of 7.5 kW at pulse repetition rate of serveral kilohertzs. The full-width at half-maximum(FWHM)is 734 ps, and the pulse energy is 5.5 μJ with a fundamental spatial mode. In this system, the pre-pumped microchip laser of Nd:YAG/Cr:YAG wafer which is bonded through the thermal-bonding technique has achieved a time jitter value of 12 μs and a Q-switched amplitude instability of 1.26％(15)through the pre-pumped modulation technique.     

Laser-diode-pumped Nd:YVO<Subscript>4</Subscript>/Nd:YAG MOPA burst-mode laser

We report a high-repetition-rate, high-peak-power laser diode (LD) pumped burst-mode 1064 nm laser from a Nd:YVO₄/Nd:YAG master oscillator power amplifier. 10–100 kHz pulse burst in a duration up to 2 ms is achieved in LD end-pumped Nd:YVO₄ acousto-optically Q-switched laser. After amplification with LD side-pumped Nd:YAG rod amplifiers, the single pulse energy reaches 73 mJ in 10 kHz pulse burst laser with a peak power of 7.8 MW.     

Diode-end-pumped Nd:YAGLaser with Cr4+:YAG as Passive Q-switch

A diode-end-pumped Nd:YAG laser is passively Q-switched by using Cr4+:YAG as saturable absorber. When CW pumped with a laser diode which the maximum power is 550 mW, the laser produces pulses of 24 ns duration at 1064 nm, with an energy of 26 μJ.     

Diode end-pumped passively Q-switched Nd:YAG ceramic laser with Cr4+:YAG saturable absorber

We report on a diode end-pumped passively Q-switched Nd:YAG ceramic laser. By using a Cr⁴⁺:YAG single crystal with an 80% initial transmission as the saturable absorber, stable Q-switched pulses with a 126-μJ pulse energy, a 12-ns pulse width, and an 8.4-kHz pulse repetition rate have been obtained. The Q-switching performance of the laser under different saturable absorption strengths and output couplings was experimentally investigated.     

High-energy Q-switched operation of a fiber-laser-pumped Er:YAG laser

A high-energy Q-switched Er:YAG laser in-band pumped by an Er,Yb co-doped fiber laser is reported. A simple two-mirror multi-mode resonator incorporating an electro-optic Q-switch and a multi-Brewster-plate polarizer was employed, together with a simple compensation scheme to reduce the depolarization loss due to thermally induced stress birefringence in the Er:YAG crystal at high pump powers. The laser yielded Q-switched pulses at 1617 nm with 30.5-mJ pulse energy and <20-ns pulse duration (FWHM) at 20-Hz repetition rate, corresponding to a peak power of >1.5 MW for 55 W of pump power at 1532 nm. The prospects for further improvement in Q-switched performance are discussed.     

Pulse compression in diode-pumped doubly Q-switched Nd:GdVO<Subscript>4</Subscript> laser with both V<Superscript>3+</Superscript>:YAG and Co<Superscript>2+</Superscript>:LMA saturable absorber

By simultaneously using both a V³⁺:YAG and a Co²⁺:LaMgAl₁₁O₁₉ saturable absorber in the cavity, for the first time to our knowledge, a diode-pumped doubly Q-switched Nd:GdVO₄ laser has been realized. The dependence of pulse width, pulse repetition rate, pulse energy and peak power on the incident pump power are measured. Under the absorbed pump power of 8.59 W, both the pulse temporal profile of the passive double-switching with the pulse width of 25.29 ns, and the passive single-switching just using V³⁺:YAG with pulse width of 30.46 ns are obtained. The pulse duration is partly compressed in contrast to the purely passively Q-switched laser with V³⁺:YAG.     

Cr^4＋：YAG在对撞脉冲锁模的Nd：YAG激光器中实现被动锁模的研究

在理论上提出了Ｃｒ＾４＋：ＹＡＧ作为可饱和吸收体在Ｎｄ：ＹＡＧ激光器中实现被动锁模的可能性，运用速率方程组导出在强激光脉冲作用下Ｃｒ＾４＋：ＹＡＧ激发态吸收的恢复时间和饱和光强。实验上在带有抗共振环结构的接近于介稳腔的脉冲式Ｎｄ：ＹＡＧ激光器中用Ｃｒ＾４＋：ＹＡＧ作为可饱和吸收体实现被动锁模运转，得到能量１３．５ｍＪ、平均脉宽１８０ｐｓ的锁模脉冲序列。     

Diode pumped Nd:YAG laser repetitively Q-switched with Cr4+:YAG

Based on the rate equations of passively Q-switched solid state lasers, the performance of laser at a fixed pump power can be optimized through the proper choice of output coupler and the low-intensity transmission of saturable absorber. A simple expression for optimizing these two parameters is derived in this paper. We also demonstrate the performance of an efficient diode-pumpe Cr⁴⁺:YAG passively Q-switched Nd:YAG laser to generate a high-repetition-ate, high-peak power 1064 nm laser pulses, which providing pulses peak power > 10 kW with high repetition rate up to 150 kHz, and the pulse width as short as 6.8 ns.     

Diode-pumped Q-switched Nd:Y<Subscript>0.5</Subscript>Lu<Subscript>0.5</Subscript>VO<Subscript>4</Subscript> laser double-modulated with an acousto-optic modulator and Cr<Superscript>4+</Superscript>:YAG saturable absorber

A diode pumped Nd:Y_0.5Lu_0.5VO₄ pulse laser modulated with an acousto-optic (AO) Q-switcher and Cr⁴⁺:YAG saturable absorber is first demonstrated in this paper. The laser is shown to generate shorter pulse width than AO Q-switched laser alone, and have a higher peak power and single pulse energy than passively Q-switched laser with only Cr⁴⁺:YAG. A laser pulse width of 6.16 ns and a peak power of about 43.83 kW are achieved at the incident pumping power of 14.09 W.     

Cr^4＋：YAG的可饱和吸收特性与被动Q开关性能研究

运用速率方程计算了Ｃｒ＾４＋：ＹＡＧ晶体的可饱和吸收特性参数，包括初始吸收系数，饱和吸收系数，饱和光强和损耗调制度，用Ｃｒ＾４＋：ＹＡＧ对脉冲和连续Ｎｄ：ＹＡＧ激光器进行了被动调Ｑ，在脉冲Ｎｄ：ＹＡＧ激光器上得到了８ｎｓ的调Ｑ激光脉冲，在连续Ｎｄ：ＹＡＧ激光器的调Ｑ中得到了间隔和幅度抖动小于５％的输出脉冲充列。     

Self-Q-switched and mode-locked 946 nm Cr,Nd:YAG laser

A simultaneous self-Q-switched and mode-locked diode-pumped 946 nm laser by using a Cr,Nd:YAG crystal as gain medium as well as saturable absorber is demonstrated for the first time as we know. The maximum average output power of 751 mW with a slope efficiency of 18.38% is obtained at an intra-cavity average peak power intensity of 4.83 × 10⁶ W/cm². Under this circumstance, the repetition rate of Q-switched envelopes is 9.63 kHz and the pulse width is about 460 ns. Almost 100% mode-locked modulation depth is obtained at all time in the experiment process whether the incident pump power is low or high. The repetition rate of mode-locked pulses within a Q-switched envelope is 135.13 MHz and the mode-locked pulse width is within 600 ps. The laser produces high-quality pulses in TEM₀₀-mode in the simultaneous self-Q-switched and mode-locked experiment.     

Observation of Antiphase State in a Self-Q-switched Nd,Cr:YAG Laser

We experimentally investigate the antiphase dynamics phenomenon in a self-Q-switched Nd, Cr：YAG laser operating at 946 nm. Due to the effect of spatial hole burning, the Q-switched pulses sequences of one, two and three modes at different pump power are observed. The experimental results show that the pulse sequences display classic antiphase dynamics.     

Diode-pumped doubly Q-switched YVO4/Nd:YVO4 laser with BBO electric-optic Q-switch and Cr4+:YAG saturable absorber

In the experiment, we have demonstrated the performance of a laser-diode, end-pumped, doubly Q-switched YVO₄/Nd:YVO₄ laser with both a BBO electric-optic (EO) Q-switch and Cr⁴⁺:YAG saturable absorber. At a maximum incident pump power of 15 W and an EO Q-switch repetition rate of 8 kHz, the stable laser pulses with the pulse duration 5.28 ns, the single pulse energy 0.14 mJ, and the pulse peak power 26 kW are obtained. The experimental results show that the double Q-switched laser with EO and Cr⁴⁺:YAG can generate the shorter pulse and the higher peak power in comparison to singly Q-switched laser with EO.