n-SiC拉曼散射光谱的温度特性

测量了采用离子注入法得到掺N的n-SiC晶体从100—450 K的拉曼光谱. 研究了SiC一级拉曼谱、电子拉曼散射谱及二级拉曼谱的温度效应. 实验结果表明,大部分SiC一级拉曼峰会随温度升高向低波数方向移动,但声学模红移(峰值位置向低频方向移动)的幅度较光学模小. 重掺杂4H-SiC的纵光学声子等离子体激元耦合(LOPC)模频率随温度升高表现出先蓝移(峰值位置向高频方向移动)后红移的变化趋势,表明LOPC模的温度特性不仅会受到非简谐效应的影响,还与实际已离化杂质浓度有关. 电子拉曼散射峰线宽随温度升高而增 关键词： 碳化硅 温度 纵光学声子等离子体激元耦合模 电子拉曼散射     

n型6H-SiC拉曼散射光谱的温度特性（英文）

三片具有不同载流子浓度的n型6H-SiC体材料用于83K到673K的变温拉曼散射研究,能够得到变温的拉曼散射模。通过测量可以得到,随着温度的增长,不同的声子散射模的拉曼峰逐渐变小。运用声子频率的温度特性计算公式,对三片样品的三个声子模的峰位进行拟合能够得到很好的拟合结果。6H-SiC样品的纵光学声子模(LOPC)的拉曼位移像其他的拉曼模一样,随着温度的增加而变小。在较高的温度时所有的声子模明显展宽。     

硅酸盐熔体微结构单元的对称伸缩模的拉曼散射系数

通过一种新开发的模拟计算方法，计算了硅酸钠熔体的拉曼谱，及其在高频区代表5种硅氧 四面体(用Qi表示，其中i表示桥氧数)的特征峰的拉曼散射系数Si，发现成分的变化对5 种Qi的特征峰的拉曼散射系数的影响非常小.在此基础上取平均分别得到：S0=1,S1=0 ．514,S2=0242,S3=0090和S4=0015然后将计算得到的散射系数应用于二硅酸 钠熔体的实验谱图的定量分析中，得到了该熔体中硅氧四面体单元的分布.同时从计算与试 验谱图的定量解谱中发现，钠系硅酸盐熔体谱中Q0和Q2的ASS模所产生的散射信号 不容忽视. 关键词： 拉曼散射系数 硅氧四面体 硅酸盐熔体 高温拉曼谱     

皮秒激光抽运高压H_2的受激拉曼散射研究

利用Nd :YAG锁模序列脉冲激光 (10 6 4nm)抽运充有高压H2 的拉曼池 ,输出光束经棱镜分光后投射在屏上 ,在可见光及近紫外光区用彩色胶卷摄得 15个受激拉曼散射光斑 ;经 1m光栅摄谱仪摄谱 ,在 36 5— 6 0 5nm波长范围内得到 6 5条受激拉曼谱线 .通过实验结果与理论计算值的比较 ,证明除了H2 的振动拉曼频移量 4 15 4 6cm- 1 外 ,还有多个振动及转动拉曼频移量共同参与作用 ,从而产生了从紫外到红外众多波长的受激拉曼散射光 .     

DKDP晶体的拉曼散射谱分析

根据空间群理论分析和指认了磷酸二氘钾晶体[K(D_xH_1-x)₂PO₄,简称DKDP]的拉曼活性晶格振动模,测量了其室温拉曼光谱。结果表明DKDP晶体的晶格振动谱主要是由D₂PO-₄阴离子团簇的内振动引起的。与H₂PO-₄阴离子稀溶液的拉曼谱和NaD₂(PO₄)₂晶体的拉曼谱比较,DKDP晶体中D₂PO-₄阴离子的四个特征内振动模可被指认为881 cm-1(ν₁),357 cm-1(ν₂),514/541 cm-1(ν₃),965 cm-1(ν₄)。     

压电晶体拉曼散射的统一量子论

发展了拉曼散射的一个广义量子理论，它能同时说明非极性模和极性模的作用.在场论中， 光被纵光学和横光学模的拉曼散射能在一个统一的理论框架内描述. 关键词： 拉曼散射 声子 量子场论     

单层纳米碳管振动模的拉曼光谱研究

测量了单层纳米碳管的一级、二级拉曼光谱.在40—3300cm^-1范围内观测到18条一级拉曼谱线和7条二级拉曼谱线,理论所预言的谱线几乎全被观测到,谱峰位置和理论值符合得很好.通过和理论值的对照,对这些谱线作了初步标定.所观测到的单层纳米碳管的拉曼激活振动模数目及二级拉曼谱线条数都是迄今最多的. 关键词：     

N型4H-SiC低温拉曼光谱特性

利用拉曼散射技术对N型4H-SiC单晶材料进行了30～300 K温度范围的光谱测量。实验结果表明,随着温度的升高,N型4H-SiC单晶材料的拉曼峰峰位向低波数方向移动,峰宽逐渐增宽。分析认为,晶格振动随着温度的升高而随之加剧,其振动恢复力会逐渐减小,使振动频率降低;原子相对运动会随温度的升高而加剧,使得原子之间及晶胞之间的相互作用减弱,致使声学模和光学模皆出现红移现象。随着温度的升高,峰宽逐渐增宽。这是由于随着温度的升高声子数逐渐增加,增加的声子进一步增加了散射概率,从而降低了声子的平均寿命,而声子的平均寿命与峰宽成反比,因此随着温度的升高峰宽逐渐增宽。声子模强度随温度升高呈现不同规律,E₂(LA),E₂(TA),E₁(TA)和A₁(LA)声子模随着温度升高强度单调增加,而E₂(TO),E₁(TO)和A₁(LO)声子模强度出现了先增后减的明显变化,在138 K强度出现极大值。分析认为造成原因是由于当温度高于138 K时,高能量的声子分裂成多个具有更低能量的声子所致。     

分子束外延PbTe单晶薄膜的反常拉曼光谱研究

采用分子束外延(MBE)方法在BaF₂(111)衬底上生长了高质量的PbTe单晶薄膜， 拉曼光谱测量观察到了表面氧化物的振动模、布里渊区中心(q≈0)纵光学(LO)声子振动模以 及声子-等离子激元耦合模振动.随着显微拉曼光谱仪激光光斑聚焦深度的改变，各拉曼散射 峰的峰位、积分强度、半高宽等都表现出不同的变化趋势. 随着激光光斑聚焦位置从样品表 面上方3μm处变化到表面下方3μm处，PbTe外延薄膜的LO声子频率从119cm^-1移 动到124cm^{-1关键词： PbTe外延薄膜 拉曼散射 纵光学声子}     

基于偏振拉曼散射光谱的4H-SiC晶体各向异性特性研究

采用背向散射偏振配置,对半极性a面(1120)生长的4H-SiC晶体,测量了激发光偏振方向与光轴成不同角度时各声子振动的偏振拉曼散射光谱,研究了不同声子模式的偏振拉曼散射光的强度变化与性质。利用拉曼选择定则,对实验结果进行拟合分析得到了不同声子模式的拉曼散射矩阵张量元系数及其各向异性特征。研究结果为深入了解4H-SiC晶体的微观结构和各向异性性质提供依据。     

Investigation of micropipes in 6H-SiC by Raman scattering

The spectra of 6H-SiC crystals including micropipes have been examined for the Si face using Raman scattering. The first-order Raman features reveal that the intensity of the transverse optical phonon band centered at ∼796 cm⁻¹ is sensitive to the micropipes. And the second-order Raman features of the micropipes in bulk 6H-SiC are well-defined using the selection rules for second-order scattering in wurtzite structure. It is found that there are some second-order peaks missing for the micropipe-including sample, which may be induced by the reduction of the incident laser intensity at around the micropipe, especially the uneven surface in the inner wall of the micropipe. These features might also be employed to characterize other structural defects such as screw-dislocations and threading edge dislocations.     

Spectroscopy of phonon and vibronic states of YbAl3(BO3)4 single crystal

The polarized Raman and reflection spectra of a single crystal YbAl₃(BO₃)₄ at room temperature were studied. Raman active vibrational modes A ₁, E _TO, and E _LO are identified. In the Raman spectrum, we detected an intense line at a frequency of 1018 cm⁻¹, which refers to internal vibrations of the BO₃ group and is known to be promising for use in amplifiers based on stimulated Raman scattering. From the simulation of reflection spectra by the method of dispersion analysis the frequencies of A ₂ vibrational modes were determined. Intense bands observed in the low-temperature transmission spectra in the range of f-f transitions in the Yb³⁺ ion are attributed to electron-phonon transitions. The Raman lines are compared with electron-phonon lines in the transmission spectrum.     

Spin-dependent phonon Raman scattering in CdCr2Se4

Influences of ferromagnetic ordering on the phonon Raman scattering are studied for CdCr₂Se₄ through the intensity measurements of Raman spectra between 25 and 300 K with various wavelengths of excitation light (488.0–676.4 nm). Spin-dependent enhancements of Raman cross section are observed for optical phonon lines D(168 cm^?1) and F(238 cm^?1) with excitation wavelengths of about 630 and 550 nm, respectively. This kind of phenomenon in spinel-type chalcogen chromites seems to originate in spin-dependent intermediate interactions in the excited states of specific electronic transitions with which the incident or scattered light is resonant.     

A high pressure Raman study of TeO2 to 30 GPa and pressure-induced phase changes

The effect of pressure on the Raman modes in TeO₂ (paratellurite) has been investigated to 30GPa, using the diamond cell and argon as pressure medium. The pressure dependence of the Raman modes indicates four pressure-induced phase transitions near 1 GPa, 4.5 GPa, 11 GPa and 22 GPa. Of these the first is the well studied second-order transition fromD ₄ ⁴ symmetry toD ₂ ⁴ symmetry, driven by a soft acoustic shear mode instability. The remarkable similarity in the Raman spectra of phases I to IV suggest that only subtle changes in the structure are involved in these phase transitions. The totally different Raman spectral features of phase V indicate major structural changes at the 22GPa transition. It is suggested that this high pressure-phase is similar to PbCl₂-type, from high pressure crystal chemical considerations. The need for a high pressure X-ray diffraction study on TeO₂ is emphasized, to unravel the structure of the various high pressure phases in the system.     

Raman analysis of defects in n-type 4H-SiC

This paper employs micro-Raman technique for detailed analysis of the defects (both inside and outside) in bulk 4H-SiC. The main peaks of the first-order Raman spectrum obtained in the centre of defect agree well with those of perfect bulk 4H-SiC, which indicate that there is no parasitic polytype in the round pit and the hexagonal defect. Four electronic Raman scattering peaks from nitrogen defect levels are observed in the round pit (395\,cm$^{-1}$, 526\,cm$^{-1}$, 572\,cm$^{-1}$, and 635\,cm$^{-1})$, but cannot be found in the spectra of hexagonal defect. The theoretical analysis of the longitudinal optical plasmon--phonon coupled mode line shape indicates the nonuniformity of nitrogen distribution between the hexagonal defect and the outer area in 4H-SiC. The second-order Raman features of the defects in bulk 4H-SiC are well-defined using the selection rules for second-order scattering in wurtzite structure and compared with that in the free defect zone.     

Raman scattering of light and IR absorption in carbon nanotubes

Raman light scattering and IR absorption spectra of samples containing multilayer carbon nanotubes in different stages of purification by the selective oxidation technique have been investigated. It was found that the Raman spectra of carbon nanotubes exhibit softening of the mode at 1582 cm⁻¹ corresponding to E _2g vibrations of graphite hexagons and a line at 120 cm⁻¹ due to the radial vibrations of nanotubes. In IR absorption spectra measured in the region of 0.07–0.3 eV, several sets of lines with a spacing of 15 meV (120 cm⁻¹) between lines of each group have been detected. We suggest that each group corresponds to electron transitions generating electron-hole pairs in semiconducting nanotubes and contains a phononless 00-line and its phonon replicas with spacing between them equal to the “breathing” mode energy of 120 cm⁻¹. Measurements of electric conductivity at a frequency of 9300 MHz indicate that, in addition to semiconducting nanotubes, the samples contain nanotubes with properties of a highly disordered semimetal. Zh. éksp. Teor. Fiz. 113, 1883–1891 (May 1998)     

Rotational polar structural distortions in Pb1−x CaxTiO3 solid solutions from Raman spectroscopic data

The polarized Raman spectra of single-crystal samples of the Pb_0.55Ca_0.45TiO₃ solid solution are investigated in the frequency range 6 < v < 1200 cm^?1 at high temperatures (290–560 K). It is found that, among the three revealed specific temperatures, at least two temperatures correspond to structural phase transitions. The allowed topology of the phase diagrams, which agrees qualitatively with the experimental data, is discussed in terms of the Landau theory of second-order phase transitions.     

Photoluminescence and multiphonon resonant Raman scattering in Ni-and Co-doped Zn1−x MnxTe crystals

Low-temperature photoluminescence, exciton reflection, and multiphonon resonant Raman scattering spectra of Ni-and Co-doped Zn_1−x Mn_xTe crystals were investigated. Intense emission occurs in a broad spectral region (1100–17 000 cm⁻¹) in the crystals containing Ni atoms. It is caused by intracenter transitions involving Mn²⁺ ions and transitions between the conduction band and a level of the doubly charged acceptor. The features of the exciton photoluminescence and multiphonon resonant Raman scattering involving longitudinal-optical (LO) phonons at various temperatures are investigated. The insignificant efficiency of the localization of excitons on potential fluctuations in the Zn_1−x Mn_xTe:Co crystals is established. A temperature-induced increase in the intensity of the 5LO multiphonon resonant Raman scattering line due to the approach of the conditions for resonance between this line and the ground exciton state is observed in these crystals. Fiz. Tverd. Tela (St. Petersburg) 40, 616–621 (April 1998)     

Raman scattering in magnetic US3

A Raman scattering investigation of magnetic US₃ has been made from 7 to 300 K. Comparison of room temperature spectra with those of the non magnetic isostructural sulfide HfS₃ allowed the assignment of most of the lines to $\textcolor{red}{}\text{=}\text{0}$ optical phonons. Drastic changes take place in the 10?150 cm^?1 range when lowering the temperature down to 7 K : four equally spaced lines appear at 54, 72.5, 91 and 109.5 cm^?1. Three of them broaden significantly with increasing temperature and disappear near 50 K, at which previous measurements indicate a maximum in the magnetic susceptibility and suggest a magnetic phase transition. The stronger fourth line is still observed at 100 K and merges into a phonon line at higher temperature. These four lines are attributed to electronic transitions within the 5f² configuration of U⁴⁺. Their temperature dependences appear to involve a spin-dependent scattering mechanism and are consistent with antiferromagnetic ordering.     

InGaN薄膜的紫外共振喇曼散射

利用325nm紫外光激发,对不同组分的In_xGa_1-xN薄膜的喇曼散射谱进行了研究.在光子能量大于带隙的情况下,观察到显著增强的二阶A₁(LO)声子散射峰.二阶LO声子峰都从一阶LO声子的二倍处向高能方向移动,移动量随样品In组分的增加而增大,认为是带内Frhlich相互作用决定的多共振效应引起的.分析了一阶LO声子散射频率和峰型与In组分的关系.在喇曼谱中观察到样品存在相分离现象,并与X射线衍射的实验结果进行 关键词： xGa_1-xN合金')" href="#">In_xGa_1-xN合金 紫外共振喇曼散射 二阶声子 相分离