Electrodeposition of Dye-Doped Titania Thin Films

We extend our novel low-voltage electrochemical method for oxide thin film formation from sol-gel monomers to include entrapment of organic molecules within the films. We also describe an extension of the method to titania thin films, which are obtained from titanium tetra-n-propoxide in alcoholic solutions by applying potentials in the range of +2.0 to ?1.4 V to indium tin oxide electrodes. The film thickness (ranging between 20–1000 nm) is controllable by changing either the potential or the duration of its application. We demonstrate that this electrochemical method provides a convenient way for entrapment of organic dopants within the film. Four dyes were used for that purpose: Basic Blue 41, methylene-blue, tris(2,2′-bipyridine)iron(II) and tris(2,2′-bipyridine)ruthenium(II).     

电子功能外延薄膜的电沉积

电沉积作为一种在温和条件下从溶液中合成材料的技术已被广泛应用于在导体和半导体基底表面合成各种功能材料。电沉积一般由人为施加于基底的电刺激（如：施加电位/电流）来触发。这种电刺激通过氧化或还原靠近基底表面的溶液层内部的离子、 分子或配合物从而使该溶液层偏离其热力学平衡状态,随后引起目标产物在基底表面的沉积。在电沉积过程中, 许多实验参数都可能从不同的方面对沉积物的物化性质造成影响。迄今为止,已通过电沉积制备出多种单质（包括金属和非金属单质）、 化合物（例如：金属氧化物、金属氢氧化物、 金属硫化物等）以及复合材料。电沉积制备的这些材料大多为多晶、 织构或外延薄膜的形式。其中, 外延薄膜是一种具有特定的面外和面内晶体生长取向且其晶体取向受基底控制的类单晶薄膜。由于外延薄膜中高度有序的原子排列,它们常呈现出独特的电磁性质。本文总结了常见的电沉积合成路线及影响沉积物外延生长的关键实验因素。此外, 本文简要介绍了用于表征外延薄膜的技术。最后, 本文还讨论了一些采用电沉积制备的具有特殊电子、 电磁及光电特性的功能外延薄膜。     

二甲基甲酰胺中钬镍合金的电沉积

研究了在二甲基甲酰胺(DMF)体系中钬的电还原及钬与镍的电解共沉积.结果表明,由 于微量水在电极上还原形成不溶的导电性差的膜层,使钬单独沉积很困难.恒电位电解用于 制备钬镍合金, EDAX,SEM和XRD用于分析镀层,得到了黑色粘附性好的非晶态钬镍合金镀层 ,钬的含量可高达72.7％.     

Electrodeposition of gold particles on aluminum substrates containing copper

Electrodeposition of adhesive metal films on aluminum is traditionally preceded by the zincate process, which activates the aluminum surface. This paper presents an alternative approach for activation of aluminum by using films containing 99.5% aluminum and 0.5% copper. Aluminum/copper films are made amenable for subsequent electrodeposition by anodization followed by chemical etching of aluminum oxide. The electrodeposition of gold is monitored with electrochemical impedance spectroscopy (EIS). Analysis of EIS data suggests that electrodeposition of gold increases the interfacial capacitance from values typical for electrodes with thin oxide layers to values typical for metal electrodes. Scanning electron microscopy examination of aluminum/copper films following gold electrodeposition shows the presence of gold particles with densities of 10(5)-10(7) particles cm(-2). The relative standard deviation of mean particle diameters is approximately 25%. Evaluation of the micrographs suggests that the electrodeposition occurs by instantaneous nucleation followed by growth of three-dimensional semispherical particles. The gold particles, which are electrically connected to the conductive aluminum/copper film, support a reversible faradaic process for a soluble redox couple. The deposited gold particles are suitable for subsequent metallization of aluminum and fabrication of particle-type films with interesting catalytic, electrical, and optical properties.     

沉积电位对电沉积ZnS薄膜的影响

采用电沉积方法,在不同沉积电位条件下,在氧化锡铟(ITO)导电玻璃上沉积制备了ZnS薄膜,利用XRD、SEM和UV-VIS测试技术对在不同沉积电位所制备薄膜的晶相结构、表面微观形貌和光学性能进行了表征.研究结果表明:沉积电位在1.5 V—1.7 V范围内制备的ZnS薄膜呈非晶态,其可见光透过率从60 %降低到20 %,薄膜的光学带隙约为3.97 eV.在沉积电位为2.0 V条件下所沉积薄膜为ZnS结晶相和金属Zn混合相,薄膜透过率显著降低.     

单步电沉积法制备CuInS2薄膜

采用单步电沉积法在Mo基底上制备了高质量的CuInS2薄膜. 用X射线衍射仪(XRD)和扫描电子显微镜(SEM)表征了样品的结构和形貌, 研究了沉积电位、退火温度、pH值、反应物浓度等工艺条件对制备的CuInS2薄膜形貌、组分及性能的影响. 制备的CuInS2薄膜致密平整, 呈黄铜矿结构, 晶粒大小为1-2 μm. 用紫外-可见光分光光度计测试了其光学性能, 计算得到常温下禁带宽度为1.41 eV, 非常适合用作薄膜太阳电池的吸收层材料.     

Electrodeposition of selenium from 1-ethyl-3-methyl-imidazolium trifluromethylsulfonate

The electrodeposition of thin selenium (Se) films from 1-ethyl-3-methyl-imidazolium trifluromethylsulfonate at room and elevated temperatures on gold and on copper substrates was studied under open-air conditions. The effect of bath temperature on the composition and structure of the deposited films was examined using cyclic voltammetry, chemical analysis and X-ray diffraction analysis. The obtained results showed that on gold substrate and at room temperature, a reddish Se film grows mainly in amorphous, monoclinic, rhombohedral and hexagonal structure, while at temperatures ≥90 °C, a grayish film of hexagonal and rhombohedral structure is deposited. Photoelectron spectroscopy shows that both films consist of pure Se with only slight surface contaminations by remnants from the electrodeposition. Due to the differences in phase structure and the presence of the monoclinic phase, the reddish films showed higher light absorbance. The band gap of the reddish film is close to that of pure amorphous Se reported in literature. Deposition on copper substrate leads to formation of CuSe and CuSe₂ at room temperature and at 70 °C, respectively.     

Electrodeposition of uranium dioxide films

Uranium dioxide films in a hydrated form are electrodeposited unto nickel plates starting with a uranyl nitrate solution in ammonium sulfate. The process is incidental to water splitting which is the dominant electrochemical pathway and as a consequence, the uranium deposition is highly dependent on experimental parameters that require close control such as the pH and concentration of the supporting electrolyte as well as current density, and the cell design. This revised version was published online in July 2006 with corrections to the Cover Date.     

Electrodeposition and characterization of CdSex-Te1-x semiconducting thin films

Thin polycrystalline films of cadmium chalcogenides CdSe_xTe_1-x ( 0 ≤ x ≤ 1) have been prepared by electrochemical plating on ITO (indium tin oxide) coated glass substrates from an acid sulfate solution at 90 °C. Structural, morphological and compositional studies of the deposited films are reported as a function of the x coefficient. XRD analysis shows that all deposits have a cubic structure with a preferred orientation along the (111) direction. The composition in the films is found to vary linearly with the composition in the solution. The increase in the selenium content x in the CdSe_xTe_1-x films decreases the lattice constant and increases the band gap. Nevertheless this latter presents a minimum for x = 0.27.     

热处理对电沉积制备CuInGaSe2 薄膜的影响

CuInGaSe2薄膜太阳能电池因具有稳定、高效、低成本和环保等特点而受到国内外科学家的重视.采用Mo/钠钙玻璃衬底为研究电极,饱和甘汞电极(SCE)为参比电极,大面积的铂网电极为辅助电极的三电极体系,在钼/钠钙玻璃衬底上利用电沉积技术制备出太阳能电池用的CuInGaSe2薄膜.分析了不同热处理温度对电沉积制备的CuInGaSe2薄膜的影响,结果表明:当热处理温度为450℃时,所制备的CuInGaSe2薄膜的化学组成接近理想的化学计量比,薄膜具有黄铜矿结构,颗粒均匀和致密性较好.     

Electrodeposition and characterization of Pd nanoparticles doped amorphous hydrogenated carbon films

Palladium (0) nanoparticles incorporated hydrogenated amorphous carbon (Pd/a-C:H) films were synthesized on single crystal silicon (100) substrates by electrochemical deposition route using methanol and camphor as carbon source, and Pd nanoparticles as dopant. The characterization results indicate that Pd nanocrystalline particles with diameter in the range of 1–5 nm dispersed in the amorphous carbon matrix. Compared with pure a-C:H films, the introduction of Pd nanoparticles didn't change the structure of carbon films. At the end, the growth mechanism of the Pd/a-C:H composite films was discussed.     

Electrodeposition of micro- and nanocrystalline lead selenide from alkaline selenosulfate solutions

Cathodic electrodeposition of PbSe is carried out in aqueous alkaline selenosulfate (SeSO ₃ ^2? ) bath of lead complex ions at various conditions of electrolysis. Micro- and nanocrystalline PbSe thin films were grown onto glassy carbon (GC) substrates by potentiostatic and cyclic voltammetric (CV) methods respectively. Structure and surface morphology of thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). X-ray diffraction indicates that the PbSe films have cubic structure without any impurities. The SEM micrograph showed the films cover GC substrate completely and consisted of irregular shaped grains.     

Electrodeposition and characterization of PbSe films on indium tin oxide glass substrates

Electrodeposition of lead selenide (PbSe) thin films on indium tin oxide (ITO) covered glass is described. While disodium salt of ethylenediaminetetraaceticacid was used to complex the lead ions, well crystallized, nearly stoichiometric and mirror-like PbSe films were deposited on ITO glass in potentiostatic mode using aqueous acidic electrolyte containing Pb and Se precursors at different bath temperature. The improvement of crystallinity of the PbSe films deposited at different temperature was studied using X-ray diffraction and Raman scattering. The morphology and composition of the films were characterized by scanning electron microscopy and energy disperse analysis by X-ray, respectively. The optical property of the film was studied by optical measurement techniques.     

Electrodeposition of cobalt oxide films from carbonate solutions containing Co(II)–tartrate complexes

An electrochemical procedure of anodic deposition of cobalt oxyhydroxide film on a glassy carbon substrate in an alkaline medium (i.e. pH 11.6) is described. The electrodeposited film was obtained either by voltage cycling or by potentiostatic conditions using non-deaerated 0.1 M Na₂CO₃ solutions containing 40 mM tartrate ions and 4 mM CoCl₂. The effects on the film formation and growth, such as tartrate–cobalt ratio, pH, applied potential, etc. were widely evaluated. The electrodeposition process, under anodic conditions and moderately alkaline solutions, most likely involves a redox transition Co(II)→Co(III)/Co(IV) with destruction of the tartrate complex and formation of insoluble oxide/hydroxide cobalt species on the glassy carbon surface. The resulting cobalt oxyhydroxide films were characterised by cyclic voltammetry (CV) in 0.1 M NaOH solutions and by scanning electron microscopy (SEM) analysis after different strategies of preparation and various electrochemical treatments. The electrochemical activity of the deposited films was checked using various organic molecules as model compounds.     

电沉积铁族薄膜的磁性圆二色研究

采用循环伏安法在GaAs(100)单晶表面电沉积了铁族金属单质薄膜. 扫描电子显微镜(SEM)结果显示, Fe族金属薄膜的晶粒较小, 薄膜平整度较高。通过X射线衍射(XRD)谱分析了Fe, Co, Ni在GaAs(100)晶面上的外延生长. 使用磁光克尔效应装置研究了Fe族金属薄膜的宏观磁性, 用同步辐射圆偏振软X射线测量了铁族单质磁性薄膜的吸收谱, 获得了X射线磁性圆二色谱, 并通过加和定则计算了磁性薄膜中Fe族金属原子的轨道磁距和自旋磁矩.     

Studies on Preparation of Co-Bi Alloy Films by Electrodeposition From Nonaqueous Medium

IntroductionSemimetallic bismuth is a material exhibitinginteresting magnetoresistance( MR) characteristicand finite- size effect,whose electronic propertiesare fundamentally different from those of commonmetals due to the complex and highly anisotropicFermi surface[1] .Recently,Bi has attracted ourmuch attention for its applications involving fieldand current sensing due to its extremely high mag-netoresistance( MR) relative to those reported forGMR and CMR materials.The large MR of Bia…     

多孔锂-硅薄膜锂离子电池负极材料的电沉积制备及其电化学性能

采用多步恒电流沉积技术, 在铜箔上电沉积制备了多孔锂-硅薄膜电极(LSF). 用X射线衍射(XRD)和扫描电镜(SEM)测试手段研究了该电极的结构和表面形貌. 作为锂离子电池负极材料, 电化学测试结果表明锂-硅薄膜电极具有较好的循环稳定性, 通过改变电沉积条件, 可有效调控该电极的嵌脱锂容量及首次循环效率. 譬如, 在0.5 mol·L^-1四氯化硅+0.7 mo·L^-1高氯酸锂的碳酸丙烯酯电解液中, 首先以-3.82 mA·cm^-2的恒定电流密度沉积600 s, 再将电流密度恒定为-1.27 mA·cm^-2, 继续电沉积7200 s, 制得锂-硅薄膜电极(LSF^-3), 该电极以12.7 μA·cm^-2的电流密度预循环2次, 其首次循环库仑效率高达97.1%. 预循环2次后, 电流密度增加到25.5 μA·cm^-2, 此时,锂-硅薄膜电极充电质量比容量和面积比容量分别为1410 mAh·g^-1及240.6 μAh·cm^-2; 50次循环后充电比容量为179 μAh·cm^-2 (1049 mAh·g^-1), 容量保持率为74.4%. 锂-硅薄膜电极中的活性锂组分可补偿首次循环时不可逆容量损失, 同时薄膜电极中的多孔结构可缓解电极材料的体积效应并改善其循环性能.     

Electrodeposition of mesoporous semimetal and magnetic metal films from lyotropic liquid crystalline phases

Mesoporous semimetal bismuth film and magnetic metal nickel and cobalt thin films have been electrodeposited from hexagonal or lamellar structured lyotropic liquid crystalline phases with polyoxyethylene surfactant. The liquid crystalline templates are characterized by low-angle X-ray diffraction (XRD) and polarized-light optical microscopy (POM). The metal films are characterized by low-angle and wide-angle XRD, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The magnetic measurements on the mesoporous nickel and cobalt films are shown to have higher coercivity (Hc) than the nonporous polycrystalline films.     

电化学方法制备铜钴纳米多层膜

采用旋转圆盘电极、双脉冲电位法从单一的含有铜离子和钴离子的镀液中电沉积Ｃｕ－Ｃｏ纳米多层膜、并用ＴＥＭ．ＡＥＳ和Ｘ－射线衍射研究镀层的形貌和组成。结果表明：多层膜结构为纯铜和含有少量铜的铜钴合金层交替组成,铜在钴层中的含量,随镀液中的铜含量的增大和转速的提高而提高。     

AgInSe~2薄膜的电沉积及其上的光电化学振荡行为

采用电沉积方法得到了AgInSe~2薄膜, 并研究了它的一些光电性质。发现在其上阴极还原H~2O~2时会产生周期性的电化学振荡现象, 且该振荡行为有效地受外界斩光频率控制, 这将可能发展成为光电传感器。