Effect of SiO2 protective layer on the femtosecond laser-induced damage of HfO2/SiO2 multilayer high-reflective coatings

Two kinds of HfO₂/SiO₂ 800 nm high-reflective (HR) coatings, with and without SiO₂ protective layer were deposited by electron beam evaporation. Laser-induced damage thresholds (LIDT) were measured for all samples with femtosecond laser pulses. The surface morphologies and the depth information of all samples were observed by Leica optical microscopy and WYKO surface profiler, respectively. It is found that SiO₂ protective layer had no positive effect on improving the LIDT of HR coating. A simple model including the conduction band electron production via multiphoton ionization and impact ionization is used to explain this phenomenon. Theoretical calculations show that the damage occurs first in the SiO₂ protective layer for HfO₂/SiO₂ HR coating with SiO₂ protective layer. The relation of LIDT for two kinds of HfO₂/SiO₂ HR coatings in calculation agrees with the experiment result.     

High-temperature oxidation behavior of SiO2 protective layer deposited on IN738LC superalloy by combustion CVD (CCVD)

A SiO₂ protective coating was deposited on an IN738LC alloy using CCVD. The physical properties of a SiO₂ protective layer are influenced by the amount of tetraethyl orthosilicate (TEOS, C₈H₂₀O₄Si). Therefore, the SiO₂ protective coating was deposited using different TEOS concentrations and deposition times to optimize the conditions. The deposited coating layer was confirmed to be a SiO₂ layer by SEM, EDX, and ESCA analyses. The oxidation resistance of the alloy was evaluated by thermo gravimetric analysis. The oxidation resistance of the SiO₂ protective coating was highest when the coating was processed at a TEOS concentration of 0.05 mol/l, which is the highest concentration of source material used. The surface roughness of the SiO₂ protective layer also increased with increasing TEOS concentration. The surface roughness of the coating had little effect on the oxidation resistance for a film thickness of approximately 1 μm.     

Physical and electrochemical characterizations of Ni-SiO2 nanocomposite coatings

Advances in materials performance often require the development of composite system. In the present investigation, SiO₂-reinforced nickel composite coatings were deposited on a mild steel substrate using direct current electrodeposition process employing a nickel acetate bath. Surface morphology, composition, microstructure and crystal orientation of the Ni and Ni-SiO₂ nanocomposite coatings were investigated by scanning electron microscope, energy dispersive X-ray spectroscopy and X-ray diffraction analysis, respectively. The effect of incorporation of SiO₂ particles in the Ni nanocomposite coating on the microhardness and corrosion behaviour has been evaluated. Smooth composite deposits containing well-distributed silicon oxide particles were obtained. The preferred growth process of the nickel matrix in crystallographic directions <111>, <200> and <220> is strongly influenced by SiO₂ nanoparticles. The average crystallite size was calculated by using X-ray diffraction analysis and it was ~23 nm for electrodeposited nickel and ~21 nm for Ni-SiO₂ nanocomposite coatings. The crystallite structure was fcc for electrodeposited nickel and Ni-SiO₂ nanocomposite coatings. The incorporation of SiO₂ particles into the Ni matrices was found to improve corrosion resistance of pure Ni coatings. The corrosion potential (E _corr) in the case of Ni-SiO₂ nanocomposite coatings had shown a negative shift, confirming the cathodic protective nature of the coating. The Ni-SiO₂ composite coatings have exhibited significantly improved microhardness (615 HV) compared to pure nickel coatings (265 HV)     

TiO2和SiO2薄膜应力的产生机理及实验探索

对最常用的TiO₂和SiO₂薄膜应力, 包括应力模型、应力测试方法和不同实验条件下的应力测试结果作了研究.基于曲率法模型，对TiO₂和SiO₂单层膜和多层膜进行了实验测试，得到了一些有价值的结果，特别是离子辅助淀积和基板温度等工艺参数对薄膜应力的影响.提出了薄膜聚集密度是应力的重要因素，低聚集密度产生张应力，而高聚集密度产生压应力.在多层膜中通过调节工艺参数，适当地控制张应力或压应力，可使累积应力趋向于零. 关键词： 薄膜应力 离子辅助淀积 聚集密度     

Nanostructured porous SiO2 films for antireflection coatings

Thin films with a low refractive index play an important role in optics, optoelectronics, and microelectronics. In this study, we present nanostructured porous SiO₂ films fabricated by using a glancing angle deposition technique. These nanostructured porous SiO₂ films deposited at an angle of 85° show very low refractive indices of 1.08 at 633 nm. As an application, a four-layer antireflection coating for visible wavelength is designed and fabricated using SiO₂ material only. The normal incidence reflectance of the antireflection coating averaged between 400 and 800 nm is about 0.04%. The microstructure and the surface morphology are also investigated by using a scanning electron microscope.     

Design, formation and characterization of a novel multifunctional window with VO2 and TiO2 coatings

A novel multifunctional window was demonstrated using VO₂-based thermochromic films with a TiO₂ antireflection coating. A strong enhancement in luminous transmittance of VO₂ was calculated using either a single layer or a double layer of TiO₂ for antireflection, with the double layer giving the better performance. A TiO₂ (25 nm)/VO₂ (50 nm)/TiO₂ (25 nm) structure, of which the film thickness has been optimized to a maximum integrated luminous transmittance (T_lum) by calculation, was formed on SiO₂ glass by sputtering in turn a V target in Ar+O₂ for VO₂ and a TiO₂ target in Ar for TiO₂. Optical properties were measured with a spectrophotometer, and the integrated solar and luminous properties were calculated based on the measured spectra. A maximum increase in T_lum by 86% (from 30.9% to 57.6%) was obtained for VO₂ after double-layer TiO₂ antireflection coating. The deposited VO₂ film on SiO₂ exhibits good thermochromism with a sharp optical transition at 58.5 °C, which decreased slightly to 57.5 °C after TiO₂ coating. The proposed window is the most advanced among those similarly reported in being multifunctional with automatic solar/heat control, ultraviolet stopping and possibly a wide range of photocatalytic functions in addition to a high value of the luminous transmittance. PACS 42.79.Wc; 78.20.-e; 71.30.+h     

多孔TiO2/Al/SiO2纳米复合结构的紫外光吸收特性研究

在SiO₂玻璃衬底上用脉冲激光沉积(PLD)技术,分别沉积Ti和Ti/Al膜,经电化学阳极氧化成功制备了多孔TiO₂/SiO₂和TiO₂/Al/SiO₂纳米复合结构. 其中TiO₂薄膜上的微孔阵列高度有序,分布均匀. 实验研究了Al过渡层对多孔TiO₂薄膜光吸收特性的影响. 结果表明：无Al过渡层的多孔TiO₂薄膜其紫外吸收峰在27 关键词： 2薄膜')" href="#">多孔TiO₂薄膜 阳极氧化 紫外光吸收     

多孔TiO2/Al/SiO2纳米复合结构的紫外光吸收特性研究

在SiO₂玻璃衬底上用脉冲激光沉积(PLD)技术，分别沉积Ti和Ti/Al膜，经电化学阳极氧化成功制备了多孔TiO₂/SiO₂和TiO₂/Al/SiO₂纳米复合结构. 其中TiO₂薄膜上的微孔阵列高度有序，分布均匀. 实验研究了Al过渡层对多孔TiO₂薄膜光吸收特性的影响. 结果表明：无Al过渡层的多孔TiO₂薄膜其紫外吸收峰在27     

Far ultraviolet optical properties of MgF2 films deposited by ion-beam sputtering and their application as protective coatings for Al

Thin films of MgF₂ deposited by evaporation is a material widely used for its transparency in the far ultraviolet (FUV) down to ∼115 nm. In this paper the optical properties of ion-beam sputtered (IBS) MgF₂ in the FUV are investigated and compared with MgF₂ films deposited by evaporation. A slightly higher transparency at the 121.6-nm, H Lyman α line was obtained for IBS MgF₂ films compared to films deposited by evaporation, which makes IBS MgF₂ a promising protective material for Al reflective coatings. Experimental work on Al films that were protected with a thin evaporated MgF₂ film followed by an IBS MgF₂ film to produce a protective coating with optimum thickness showed a reflectance at 121.6 nm that was higher by about 3% compared to an Al film protected with an all-evaporated MgF₂ film.     

超亲水性SiO2-TiO2纳米颗粒阵列结构的制备与性能研究

用分子自组装的方法在玻璃衬底上分别制备了TiO₂纳米颗粒层和SiO₂-TiO₂复合纳米颗粒阵列结构. 其中,SiO₂ 纳米颗粒层用旋涂法制备,得到密排阵列结构,而TiO₂纳米颗粒层则用浸渍提拉法制备. 文章分析了TiO₂纳米颗粒层和SiO₂-TiO₂复合纳米颗粒阵列结构的理论粗糙度,并通过扫描电子显微镜研究了它们的微观结构,用接触角 关键词： 自清洁 表面粗糙度 光催化 分子自组装     

Substrate effects on the oxygen gas sensing properties of SnO2/TiO2 thin films

In this study, SnO₂/TiO₂ thin films are fabricated on SiO₂/Si and Corning glass 1737 substrates using a R.F. magnetron sputtering process. The gas sensing properties of these films under an oxygen atmosphere with and without UV irradiation are carefully examined. The surface structure, morphology, optical transmission characteristics, and chemical compositions of the films are analyzed by atomic force microscopy, scanning electron microscopy and PL spectrometry. It is found that the oxygen sensitivity of the films deposited on Corning glass 1737 substrates is significantly lower than that of the films grown on SiO₂/Si substrates. Therefore, the results suggest that SiO₂/Si is an appropriate substrate material for oxygen gas sensors fabricated using thin SnO₂/TiO₂ films.     

Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices

Structures containing silicon nanocrystals (nc-Si) are very promising for Si-based light-emitting devices. Using a technology compatible with that of silicon, a broader wavelength range of the emitted photoluminescence (PL) was obtained with nc-Si/SiO₂ multilayer structures. The main characteristic of these structures is that both layers are light emitters. In this study we report results on a series of nc-Si/SiO₂ multilayer periods deposited on 200 nm thermal oxide SiO₂/Si substrate. Each period contains around 10 nm silicon thin films obtained by low-pressure chemical vapour deposition at T=625°C and 100 nmSiO₂ obtained by atmospheric pressure chemical vapour deposition T=400°C. Optical and microstructural properties of the multilayer structures have been studied by spectroscopic ellipsometry (using the Bruggemann effective medium approximation model for multilayer and multicomponent films), FTIR and UV–visible reflectance spectroscopy. IR spectroscopy revealed the presence of SiO_x structural entities in each nc-Si/SiO₂ interface. Investigation of the PL spectra (using continuous wave-CW 325 nm and pulsed 266 nm laser excitation) has shown several peaks at 1.7, 2, 2.3, 2.7, 3.2 and 3.7 eV, associated with the PL centres in SiO₂, nc-Si and Si–SiO₂ interface. Their contribution to the PL spectra depends on the number of layers in the stack.     

PVP掺杂-ZrO2溶胶-凝胶工艺制备多层激光高反射膜的研究

以丙醇锆(ZrPr)为锆源，二乙醇胺(DEA)为络合剂，原位引入聚乙烯吡咯烷酮(PVP)，在乙醇体系中成功地合成了PVP掺杂-ZrO₂溶胶.采用旋涂法在K9玻璃基片上制备了PVP-ZrO₂单层杂化薄膜.用不同掺杂量的PVP-ZrO₂高折射率膜层与相同的SiO₂低折射率膜层交替沉积四分之一波堆高反射膜.借助小角X射线散射研究胶体微结构，用红外光谱、原子力显微镜、紫外/可见/近红外透射光谱、椭圆偏振仪以及1064nm的强激光辐照实验对薄膜的结构、光学和抗激光损伤性能进行表征.研究发现，体系组成的适当配置可以在溶胶稳定的前提下实现ZrPr的充分水解，赋予薄膜良好的结构、光学和抗激光损伤性能.杂化体系中，DEA与ZPr之间强的配合作用大大降低了ZrO₂颗粒表面羟基的活性，使得PVP大分子只是以微弱的氢键与颗粒的表面羟基作用而均匀分散于ZrO₂颗粒的周围，对颗粒的形成和生长无显著影响.因而在实验研究范围内，随PVP含量的增大，PVP-ZrO₂杂化膜层的折射率和激光损伤阈值均无显著变化.但是，薄膜中均匀分布的PVP柔性链可以有效促进膜层应力松弛，显著削弱不同膜层之间的应力不匹配程度、大大方便多层光学薄膜的制备.当高折射率膜层中PVP的质量分数达到15%—20%时，膜层之间良好的应力匹配使得多层高反射膜的沉积周期数可达到10以上.沉积10个周期的多层反射膜，在中心波长1064nm处透射率约为1.6%—2.1%，接近全反射特征，其激光损伤阈值为16.4—18.2J/cm²(脉冲宽度为1ns). 关键词： 溶胶-凝胶 2')" href="#">PVP-ZrO₂ 高反射膜 激光损伤     

Influence of overcoat on laser-induced damage threshold of 532 and 800 nm TiO2/SiO2 high reflectors

TiO₂/SiO₂ high reflectors with and without a SiO₂ overcoat are deposited by electron-beam evaporation. The film properties are characterized by visible spectrometry measures, structure analysis, roughness and laser-induced damage threshold (LIDT) tests, surface defects and damage morphology observation. The effects of overcoats on LIDT at 532 nm, 8 ns and 800 nm, 220 ps laser pulses are investigated. The relations between film structure, roughness, surface defects, electric field and LIDT are discussed. It is found that overcoats can increase the LIDT at these two laser wavelengths. The reduction of peak temperature, the low defects density and roughness, the low intrinsic absorption of SiO₂ and its amorphous structure are the main reasons for LIDT improvement by overcoats.     

Structural properties of single and multilayer ITO and TiO2 films deposited by reactive pulsed laser ablation deposition technique

Indium tin oxide (ITO) and titanium dioxide (TiO₂) single layer and double layer ITO/TiO₂ films were prepared using reactive pulsed laser ablation deposition (RPLAD) with an ArF excimer laser. The films were deposited on SiO₂ substrates heated at 200 and 400 °C. ITO and TiO₂ films with uniform thicknesses of about 400 and 800 nm, respectively, over large areas were prepared. X-ray diffraction (XRD) analysis revealed that the ITO films are formed of highly orientated nanocrystals with an average particle size of 10-15 nm. Atomic force microscopy (AFM) observations indicate rough ITO films surfaces with average roughness of 26-30 nm. Pores were also observed. TiO₂ films deposited on the prepared ITO films result less crystalline. Annealing at 300 and 500 °C for three consecutive hours promoted formation of TiO₂ anatase phase, with crystal size of ∼6-7 nm. From the scanning transmission electron microscope (STEM) images, it can be seen that the TiO₂ films deposited onto the prepared ITO films present a relatively high pore sizes with an average pore diameter of ∼40 nm and excellent uniformity. In addition, STEM cross-sectional analysis of our films showed a columnar structure but no evidence of voids in the structure. Therefore, films exhibited large surface area, well suited for dye-sensitized solar cells (DSSC) applications.     

Thermostable photocatalytically active TiO<Subscript>2</Subscript> anatase nanoparticles

Anatase is the low-temperature (300–550 °C) crystalline polymorph of TiO₂ and it transforms to rutile upon heating. For applications utilizing the photocatalytic properties of nanoscale anatase at elevated temperatures (over 600 °C) the issue of phase stabilisation is of major interest. In this study, binary TiO₂/SiO₂ particles were synthesized by a flame aerosol process with TiCl₄ and SiCl₄ as precursors. The theoretical Si/Ti ratio was varied in the range of 0.7–1.3 mol/mol. The synthesized TiO₂/SiO₂ samples were heat treated at 900 and 1,000 °C for 3 h to determine the thermostability of anatase. Pyrogenic TiO₂ P25 (from Evonik/Degussa, Germany) widely applied as photocatalyst was used as non-thermostabilized reference material for comparison of photocatalytic activity of powders. Both the non-calcinated and calcinated powders were characterized by means of XRD, TEM and BET. Photocatalytic activity was examined with dichloroacetic acid (DCA) chosen as a model compound. It was found that SiO₂ stabilized the material retarding the collapse of catalyst surface area during calcination. The weighted anatase content of 85% remains completely unchanged even after calcination at 1,000 °C. The presence of SiO₂ layer/bridge as spacer between TiO₂ particles freezes the grain growth: the average crystallite size increased negligibly from 17 to 18 nm even during the calcination at 1,000 °C. Due to the stabilizing effect of SiO₂ the titania nanoparticles calcinated at 900 and 1,000 °C show significant photocatalytic activity. Furthermore, the increase in photocatalytic activity with calcination temperature indicates that the titania surface becomes more accessible either due to intensified cracking of the SiO₂ layer or due to enhanced transport of SiO₂ into the necks thus releasing additional titania surface.     

Electrical and optical properties of Si-doped indium tin oxides as transparent electrode and anti-reflection coating for solar cells

We have studied the electrical and optical properties of Si-doped indium tin oxides (ITSOs) as transparent electrodes and anti-reflection coatings for Si-based solar cells. The ITSO thin films were obtained by co-sputtering of ITO and SiO₂ targets under target power control. The resistivity of the ITSO thin films deposited at 0.625 in terms of power ratio (ITO/SiO₂) were 391 Ωcm. In this condition, the ITSO thin films showed very high resistivity compared to sputted pure ITO thin films (1.08 × 10⁻³ Ωcm). However, refractive index of ITSO thin films deposited at the same condition at 500 nm is somewhat lowered to 1.97 compared to ITO thin films (2.06). The fabricated graded refractive index AR coatings using ITO, ITSO, and SiO₂ thin films kept over 80% of transmittance regardless of their thickness varing from 97 nm to 1196 nm because of their low extinction coefficient. As the AR coating with graded refractive indices using ITO, ITSO, and SiO₂ layers was applied to general silicon-based solar cell, the current level increased nearly twice more than that of bare silicon solar cell without AR coating.     

低成本溶胶-凝胶法制备SiO2/TiO2双层膜的减反射与自清洁性能

将玻璃基底依次在低成本的SiO₂溶胶和TiO₂溶胶中浸渍后,在500 oC下煅烧制备了同时具备减反射与自清洁性能的SiO₂/TiO₂双层膜．该膜的光学性能与结构特征分别通过紫外-可见分光光度计和场发射扫描电镜进行了表征．同时,源于超亲水性和光催化作用的自清洁性能也凸显出来．实验结果表明制备SiO₂/TiO₂双层膜对光的透射率最高可达到95%,同时具备自清洁性能．     

SiO2的赝晶化及AlN/SiO2纳米多层膜的超硬效应

采用反应磁控溅射法制备了一系列不同SiO₂层厚度的AlN/SiO₂纳米多层膜，利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能，研究了SiO₂层在多层膜中的晶化现象及其对多层膜生长方式及力学性能的影响. 结果表明，由于受AlN六方晶体结构的模板作用，溅射条件下以非晶态存在的SiO₂层在其厚度小于0.6 nm时被强制晶化为与AlN相同的六方结构赝晶体并与AlN形成共格外延生长. 由于不同模量的两调制层存在晶格错配度，多层膜中产生了拉、压交变的应力场，使得多层膜产生硬度升高的超硬效应. SiO₂随层厚的进一步增加又转变为以非晶态生长，多层膜的外延生长结构受到破坏，其硬度也随之降低. 关键词： 2纳米多层膜')" href="#">AlN/SiO₂纳米多层膜 赝晶化 应力场 超硬效应     

TiO2/CdSe多层膜结构的制备及光电化学性能研究

采用电化学方法在导电的ITO/TiO₂ 薄膜上沉积了棕红色CdSe薄膜, 并制得TiO₂/CdSe多层膜体系,研究了多层膜的微结构和光电化学性能. 实验表明, CdSe薄膜沿着(111)方向择优生长, 多层膜结构的厚度和紫外-可见光吸收强度随着沉积层数的增加而增加. 通过测定多层膜电极的光电化学性能表明, 二层膜体系的开路电压和短路电流密度最大,光电化学性能最好.