金属磁性多层膜的新颖特性──巨磁电阻效应

磁性和非磁性层交替重构成的金属磁性多层膜常具有巨磁电阻效应，其中每层膜约几个纳米厚。出现巨磁电阻效应的基本条件是：在外磁场下相邻磁层磁化强度取向发生对变化。巨磁电阻效应的物理起源是，其自旋与局域磁化强度平行和反平行的电子受到的散射不同，散射的不同既要嗵来自获射中收的特性，又可能源于两种自旋电子的能态密度的差异。由于信息存储技术中磁电阻“读出”磁头有巨大的应用前景，巨磁电阻效应引起了人们的极大兴趣。     

磁电阻效应的研究进展

介绍了磁电阻效应的研究状况和进展,总结了铁磁金属的磁电阻效应、磁性多层膜和颗粒膜的巨磁阻效应、磁隧道电阻效应及氧化物铁磁体的超大磁阻效应的理论模型,并简要分析了磁电阻效应的物理机制。     

自旋输运和巨磁电阻--自旋电子学的物理基础之一

介绍磁性纳米结构和锰氧化物中电子的自旋极化输运和巨磁电阻效应，它们是新近发展的自旋电子学的物理基础之一．着重讨论的是以下三方面的基本物理图像：磁多层结构的巨磁电阻，铁磁隧道结的隧穿磁电阻，掺杂锰氧化物的庞磁电阻效应．     

磁电子学讲座第三讲 磁性金属多层膜中的巨磁电阻效应

在许多磁性金属多层膜系统中都存在巨磁电阻效应，这些系统是由厚度为几个纳米的磁层与非磁层交替重叠而构成．出现巨磁电阻效应的必要条件是系统的磁化状态能被外加磁场所改变．该效应的物理原因是传导电子在界面处或磁层内的所谓自旋相关散射．层间耦合随隔离层厚度变化而振荡的现象，在隔离层为非磁过渡金属和贵金属的系统中普遍存在．自旋阀多层结构在信息存储技术中磁电阻“读出”头方面极具应用前景．     

磁性金属多层膜中的巨磁电阻效应

在许多磁性金属多层膜系统中都存在巨磁电阻效应，这些系统是由厚度为几个纳米的磁层与非磁层交替重叠构成，出现巨磁电阻效应的必要条件是系统的磁化状态能被外加磁场所改变。该效应的物理是传导电子在界面处或磁层内的所谓自旋相关散射，层间耦合随隔离层厚度变化而振荡的现象，在隔离层为非磁过渡金属和贵金属的系统中普遍存在，自旋阀多层结构在信息存储技术中磁电阻“读出”头方面极具应用前景。     

自旋输运和巨磁电阻——自旋电子学的物理基础之一

介绍磁性纳米结构和锰氧化物中电子的自旋极化输运和巨磁电阻效应,它们是新近发展的自旋电子学的物理基础之一.着重讨论的是以下三方面的基本物理图像：磁多层结构的巨磁电阻,铁磁隧道结的隧穿磁电阻,掺杂锰氧化物的庞磁电阻效应.     

金属颗粒薄膜巨磁电阻效应的影响因素

研究金属颗粒薄膜的颗粒尺寸、磁性组分等对巨磁电阻效应的影响.在自由电子模型和自旋相关散射理论的基础上，计算了金属颗粒膜体系的电子平均散射势.在计算过程中将自旋相关项与宏观量相联系，得到了巨磁电阻效应与磁性成分比例、颗粒尺寸的关系.磁电阻效应的模拟曲线表明，增加磁性成分比例和减小磁性颗粒尺寸可增强颗粒膜的巨磁电阻效应. 关键词：     

磁电子学中的若干问题

本文综述了自旋极化输运过程中巡游电子的自旋极化、自旋相关的散射及自旋弛豫等三方面的内容；全面总结了铁磁金属的磁电阻效应（ＡＭＲ）、磁性金属多层膜和颗粒膜的巨磁电阻效应（ＧＭＲ）、氧化物铁磁体的特大磁电阻效应（ＣＭＲ）以及磁隧道结的巨大隧道电阻效应（ＴＭＲ）研究中具有代表性的实验结果及理论模型；简单介绍了新生的磁电子器件—磁电阻型随机存取存储器（ＭＲＡＭ）和全金属自旋晶体管的工作原理和工作过程。     

非简并p型Hgi-xMnxTe单晶（z〉0.17）的负磁电阻机理研究

研究磁性半导体中负磁电阻产生机理对正确理解载流子与磁性离子间的sp．d磁交换作用是非常重要的．通过变温（10-300K）磁输运和变温（5-300K）磁化率实验研究了一系列不同Mn含量非简并P型Hgl-xMn。Te单晶佃〉0．17）的负磁电阻和顺磁增强效应．实验结果表明其负磁电阻与温度的关系和磁化率与温度的关系基本一致,两者都包含一个呈指数型变化的温度函数exp（-K／T）．根据磁性半导体的杂质能级理论,非简并P型H譬1-xMnxTe单晶在低磁场范围内出现负磁电阻效应的主要物理机理为外磁场的磁化效应使得受主杂质或受主型束缚磁极化子的有效电离能减小．     

纳米材料中的巨磁电阻效应

纳米材料是指三维空间尺度中至少有一维处于纳米量级的材料,通常为１—１００ｎｍ,如纳米微粒,纳米线、管,纳米薄膜或其组合材料,近年来纳米材料中的巨磁电阻效应颇受人们青睐,本文将重点介绍颗粒膜,颗粒合金薄带,非连续多层膜,颗粒—薄膜混合型膜以及磁性隧道结的巨磁电阻效应。     

Magneto-transport properties of dilute granular ferromagnets

We present magnetoresistance (MR) measurements performed on quench-condensed granular Ni thin films which are on the verge of electric continuity. In these systems, the electric conductivity is believed to be governed by the resistance between a very small number of grains. The films exhibit sharp resistance jumps as a function of magnetic field. We interpret these findings as being the result of magneto-mechanical distortions that occur in single grains which act as bottlenecks in the dilute percolation network. The observed features provide a unique measure of magnetostriction effects in nano-grain structures as well as being able to shed light on some of the properties of regular granular magnetic films.     

The effects of electric and magnetic fields on the current spin polarization and magnetoresistance in a ferromagnetic/organic semiconductor/ferromagnetic（FM/OSC/FM） system

From experimental results of spin polarized injection and transport in organic semiconductors(OSCs),we theoretically study the current spin polarization and magnetoresistance under an electric and a magnetic field in a ferromagnetic/organic semiconductor/ferromagnetic(FM/OSC/FM) sandwich structure according to the spin drift-diffusion theory and Ohm’s law.From the calculations,it is found that the interfacial current spin polarization is enhanced by several orders of magnitude through tuning the magnetic and electric fields by taking into account the specific characteristics of OSC.Furthermore,the effects of the electric and magnetic fields on the magnetoresistance are also discussed in the sandwich structure.     

Ordinary and extraordinary Coulomb blockade magnetoresistance in a (Ga, Mn)As single electron transistor

In the conventional Ohmic regime, magnetoresistance effects comprise the ordinary responses to the external magnetic field and extraordinary responses to the internal magnetization. Here we study magnetoresistance effects in the Coulomb blockade regime using a ferromagnetic (Ga, Mn)As single electron transistor. We report measurements of the magneto-Coulomb blockade effect due to the direct coupling of high external magnetic fields and the Coulomb blockade anisotropic magnetoresistance associated with magnetization rotations in the ferromagnet. The latter, extraordinary magnetoresistance effect is characterized by low-field hysteretic magnetoresistance which can exceed three orders of magnitude. The sign and size of this magnetoresistance signal is controlled by the gate voltage, and the data are interpreted in terms of anisotropic electrochemical shifts induced by magnetization reorientations. Non-volatile transistor-like applications of the Coulomb blockade anisotropic magnetoresistance are briefly discussed.     

p型半导体金刚石膜的磁阻效应

在p型硅(100)衬底上,采用衬底负偏压微波等离子体CVD方法进行了p型异质外延金刚石膜的生长.用O₂等离子体刻蚀技术将金刚石膜刻蚀成长条形,利用四探针法在0—5T的磁场范围内测量了样品的磁阻.实验结果表明,p型异质外延金刚石膜可以产生较大的磁阻.在Fuchs-Sondheimer(F-S)薄膜理论的基础上考虑晶格散射、杂质散射和表面散射,通过求解Boltzmann方程,利用并联电阻模型研究了p型异质外延金刚石膜的磁阻效应,给出了磁阻和金刚石膜厚度、迁移率、空穴密度及磁场的关系.讨论了表面散射和价带形变对p型异质外延金刚石膜磁阻的影响,初步解释了p型异质外延金刚石膜产生较大磁阻的原因 关键词： 金刚石膜 异质外延 磁阻效应 电导率     

Morphology, magnetic, magnetoresistance and optical properties of Co-Ni-Mo alloys thin films

We present in this paper several results concerning the preparation by means of electrolysis and characterization of Co-Ni-Mo thin films. Co-Ni-Mo thin films with different molybdenum content in the range 0-25 at% Mo were prepared from a complex solution containing ions of Co, Ni and Mo, using galvanostatic control, on aluminum substrates. The effects of applied current density on the morphology, magnetic, magnetoresistance, and optical properties of the electrodeposited Co-Ni-Mo films were investigated. The applied current density significantly influenced the film composition and their magnetic properties. The increase of molybdenum content in Co-Ni films (up to 25 at% Mo) enhances the resistivity, but it reduces the magnetoresistance effect. We report the first observation of magnetoresistance as high as 8% in Co-Ni-Mo thin films.     

Seebeck and magnetoresistive effects of Ga-doped ZnO thin films prepared by RF magnetron sputtering

In this paper, Ga-doped ZnO (GZO) films were deposited on glass substrates at different substrate temperatures by RF magnetron sputtering. The effect of substrate temperature on the structural, surface morphological properties, Seebeck and magnetoresistive effects of GZO films was investigated. It is found that the GZO films are polycrystalline and preferentially in the [0 0 2] orientation, and the film deposited at 300 °C has an optimal crystal quality. Seebeck and magnetoresistive effects are apparently observed in GZO films. The thermoelectromotive forces are negative. Decreasing substrate temperature and annealing in N₂ flow can decrease carrier concentration. The absolute value of the Seebeck coefficient increases with decreasing carrier concentration. The maximal absolute value of Seebeck coefficient is 101.54 μV/K for the annealed samples deposited at the substrate temperature of 200 °C. The transverse magnetoresistance of GZO films is related to both the magnetic field intensity and the Hall mobility. The magnetoresistance increases almost linearly with magnetic field intensity, and the films deposited at higher substrate temperature have a stronger magnetoresistance under the same magnetic field, due to the larger Hall mobility.     

Planar Hall effect and magnetoresistance in Ni81Fe19 and Co square shaped thin films

Ni₈₁Fe₁₉ and Co thin films have been fabricated and their transport properties have been investigated for potential applications in ultra sensitive magnetic field sensors. The Ni₈₁Fe₁₉ films exhibit an anisotropic magnetoresistance (AMR) of 2.5% with a coercivity 2.5 Oe and the Co films exhibit an AMR of 0.7% with coercivity 11 Oe. Large planar Hall effect magnetoresistance values at room temperature are reported for both cases. An unbalanced Wheatstone bridge model is proposed to describe quantitatively the observed experimental Planar Hall Effect data.     

自旋阀与多层膜巨磁电阻的特性测量及比较

介绍磁性多层膜中自旋极化输运和巨磁电阻效应,简述自旋阀巨磁电阻与多层膜巨磁电阻在材料组成结构和工作原理方面的区别,利用和改造现有的高校物理实验室中的实验仪器并设计简易的实验电路测量这两种类型的巨磁电阻的磁敏特性,并根据实验测量的结果将这两种传感器在其灵敏度和测量范围上进行比较和研究.     

Contact effects on the magnetoresistance of finite semiconductors

We propose a new theoretical method to study galvanomagnetic effects in bounded semiconductors. The general idea of this method is as follows. We consider the electron temperature distribution and the electric potential as consisting of two terms, one of which represents the regular solution of the energy balance equation obtained from the Boltzmann transport equation at steady-state conditions and the Maxwell equation, while the other is the effect of the specimen size that is significant near the contacts (the boundary layer function). With the distribution of the electric potential at the contacts and the electron temperature distribution at the surface of the sample taken into account, we find that the magnetoresistance is different from the one in the standard theory of galvanomagnetic effects in boundless media. We show that, besides the usual quadratic dependence on the applied magnetic field B, the magnetoresistance can exhibit a linear dependence on B under certain conditions. We obtain new formulas for the linear and quadratic terms of the magnetoresistance in bounded semiconductors. This linear contribution of the magnetic field to the magnetoresistance is essentially due to the spatial dependence of the potential at the electric contacts. We also discuss the possibility of obtaining the distribution of the electric potential at the contacts from standard magnetoresistance experiments. Because the applied magnetic field acts differently on carriers with different mobilities, a redistribution of the electron energy occurs in the sample and thus, the Ettingshausen effect on the magnetoresistance must be considered in bounded semiconductors.     

In-situ strain effect on extrinsic transport of polycrystalline La0.7(Ca,Sr)0.3MnO3 films

The spin-polarised transport in ferromagnetic polycrystalline La_0.7(Sr,Ca)_0.3MnO₃ films on piezoelectric substrate has been investigated. The systematic study involved in finding the effect of in-situ strain on extrinsic electrical transport of various thick polycrystalline La_0.7(Sr,Ca)_0.3MnO₃ thin films. The in-situ strain in the manganite polycrystalline thin film is achieved by applying an electric field to the piezoelectric substrate 0.72 Pb(Mg_1/3Nb_2/3)O₃-0.28 PbTiO₃ (PMN-PT). A reversible strain of about 0.11% is acquired with an application of 10 kV/cm to the piezoelectric substrate. A typical drop in resistance at low magnetic fields has been found in all the polycrystalline manganite films. The effect of reversible strain versus the resultant strain gauges was discussed in all the polycrystalline films. At low temperatures, the effect of strain on low-field magnetoresistance and high-field magnetoresistance was found to be negligible. Further, the results are compared with the transport in manganite films deposited on step edge junctions.