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1.
The In3As2Se6-In3As2S3Se3 system has been investigated by methods of physicochemical analysis (DTA, X-ray powder diffraction, MSA) and by microhardness and density measurements. The phase diagram of the system, which is the quasi-binary section of the As-In-S-Se quaternary system, has been constructed. The region of the In3As2Se6-based solid solutions is extended to 7 mol %, and the In 3As2S3Se3-based region to 15 mol %. A new quaternary compound In6As4S3Se9 is found in the system. Original Russian Text ? I.I. Aliev, R.S. Magammedragimova, A.A. Farzaliev, Dzh. Veliev, 2009, published in Zhurnal Neorganicheskoi Khimii, 2009, Vol. 54, No. 4, pp. 691–694.  相似文献   

2.
The TlAs2Se4-Tl3As2Se3Te3 system was studied using differential thermal analysis (DTA), powder X-ray diffraction, microstructure observation, and microhardness and density measurements. A phase diagram of the title system was constructed. This system is a quasi-binary join of the TlSe-As2Se3-As2Te3 quasi-ternary system. All alloys of the system under standard conditions are prepared in the glassy form. The system has a eutectic, which contains 50 mol % Tl3As2Se3Te3 and melts at 150°C. The TlAs2Se4-base solid solution in the system extends to 12 mol % Tl3As2Se3Te3, and Tl3As2Se3Te3-based solid solution extends to 20 mol % TlAs2Se4.  相似文献   

3.
The heats of immersion of hydrophobic, amorphous arsenic chalcogenides have been measured in several organic liquids. For hexane, butanol, butylchloride and nitropropane, the heats of immersion with As2S3, As2S5 and As2Se3 showed linear dependences on the dipole moment of the wetting liquid molecule. From the results the average values of the electrostatic field strength were calculated to be 0.29 × 105, 0.31 × 105, and 0.57 × 105 e.s.u. cm?2. The heats of immersional wetting of As2S3 and As2Se3 in n-alkanols linearly increased with an increase of n, the number of carbon atoms in CnH2n+1OH. The contributions due to polarization of the liquid molecule by the electrostatic field of the solid surface, due to the dispersion force and due to the interaction between the dipole moment of the liquid with the electrostatic field of the solid were calculated by applying the additivity of intermolecular forces. The result showed that the dispersion force was the dominant contribution to the interaction in As chalcogenides-n-alkanol systems.  相似文献   

4.
The phase diagram Cu2SeAs2Se3 was investigated by thermal and X-ray methods. Cu2Se has a limited solubility for As2Se3 (5 mole% at 769 K). The stoichiometric compound Cu3AsSe3 exists between 696 and 769 K. Cu4As2Se5, a phase at 66.6 mole% Cu2Se, decomposes peritectically at 746 K. The narrow homogeneity range (4 mole% at 683 K) extends far into the ternary space. CuAsSe2 also decomposes peritectically at 683 K. A degenerated eutectic between CuAsSe2 and As2Se3 was found at 641 K. Single crystals of Cu4As2Se5 were grown in a salt melt. A metastable modification of the high-temperature phase Cu3AsSe3 can be obtained by quenching. Cu4As2Se5 (space group R3, lattice constants a = 1404.0(1) pm, c = 960.2(1) pm), Cu6As4Se9, obtained by Cambi and Elli, and Cu7As6Se13 of Takeuchi and Horiuchi are different versions of a sphalerite-type compound with a broad homogeneity range in the system CuAsSe. CuAsSe2 is possibly monoclinic with lattice parameters of a = 946.5(1) pm, b = 1229.3(1) pm, c = 511.7(1) pm, and β = 98.546(4)°. The enthalpy of mixing of Cu2Se and As2Se3 in the liquid state is endothermic.  相似文献   

5.
The TlAs2Se4-Tl3As2S3Se3 system was investigated by physicochemical methods (DTA, X-ray powder diffraction, microstructural analysis), and its phase diagram was constructed. The TlAs2Se4-Tl3As2S3Se3 join is a quasi-binary internal section of the As-Tl-S-Se quaternary system. The solubility range of TlAs2Se4-based solid solutions is extended to 7 mol %, and the region of Tl3As2S3Se3-based solid solutions is extended to 15 mol %.  相似文献   

6.
The interaction between the components of the As2S3-TlSe system has been studied using diffeential thermal analysis, powder X-ray diffraction, microstructure examination, and microhardness and density measurements. Two new quaternary compounds, TlAs2S3Se and Tl3As2S3Se3, are formed in the system. Both compounds may be prepared in a glassy state. They melt congruently at 350 and 280°C, respectively. The section As2S3-TlSe is a stable diagonal of the ternary reciprocal system As,Tl ‖ S, Se. The As2S3-base solid solution extends to 1.5 mol % TlSe. The extent of the TlSe-base solution is 5.2 mol % As2S3. Under slow cooling, the glass field in the system extends to 85 mol % TlSe; when the system is quenched to liquid nitrogen, the extent of the glass field is 100 mol % TlSe.  相似文献   

7.
The Pb5Sb4S11-Pb2SnSb2S6 system was studied by a number of physicochemical methods, and its phase diagram was constructed. It was found that the system under investigation is a quasi-binary eutectic type section of the SnS-PbS-Sb2S3 ternary system. The coordinates of the eutectic are found to be 33 mol % Pb5Sb4S11 and 750 K. Regions of solid solutions based on Pb5Sb4S11 (6 mol % Pb2SnSb2S6) and Pb2SnSb2S6 (4 mol % Pb5Sb4S11) were determined.  相似文献   

8.
The Pb2SnSb2S6-SnS system was studied over a wide range of concentrations using a set of physicochemical methods (powder X-ray diffraction, DTA, microstructure examination, and microhardness measurement). A phase diagram for the title quasi-binary join was constructed for the first time. The phase diagram is of the eutectic type; the eutectic coordinates are 25 mol % SnS and 775 K. The extents of solid solutions based on the terminal components were determined to be 10 mol % SnS and 5 mol % Pb2SnSb2S6. Alloys having compositions in the SnS-based solid solution region are semiconductors.  相似文献   

9.
The phase diagram of the Ga2S3-Y2O2S system has been investigated by differential thermal, X-ray powder diffraction, microstructural, and thermodynamic analyses. It has been established that the system is eutectic, and solubility at 295 K from the Ga2S3 side reaches 3 mol % Y2O2S. The coordinates of the eutectic point are 14 mol % Y2O2S and 1320 K.  相似文献   

10.
The Tl2S-Sb2S3-Bi2S3 quasi-ternary system (system A) was studied using DTA, X- ray powder diffraction, microstructure examination, and microhardness measurements. TlSbS2-Tl4Bi2S5(TlBiS2, Bi2S3), Sb2S3-TlBiS2, Tl3SbS3-TlBiS2(Bi2S3), and [TlSb0.5Bi0.5S2]-Tl2S isopleths; isothermal sections at 500 K; and liquidus surface projection of system A were constructed. Characteristic features of the title system are extensive fields of solid solutions extended along the TlSbS2-TlBiS2 quasi-binary section and a continuous solubility belt 1–2 mol % wide extended along the Sb2S3-Bi2S3 binary subsystem. Primary separation fields of phases and the types and coordinates of invariant and monovariant equilibria in system A were determined.  相似文献   

11.
The interactions in the GeS2-Cr2S3 and Cu2GeS3-Cr2S3 sections were studied by differential thermal analysis and X-ray powder diffraction. The GeS2-Cr2S3 section was shown to be quasi-binary, with a degenerate eutectic; no ternary compound was formed. In the Cu2GeS3-Cr2S3 section, a quaternary phase of variable composition having a homogeneity range of 69–75 mol % Cr2S3 crystallized in the cubic system. The samples of this composition are spin glasses with freezing temperatures of 20–25 K.  相似文献   

12.
The reactions of P4S3 with As4S3 and of P4Se3 with As4Se3 in the molten state yields molecules of the type P m As4–m S3 and P m As4–m Se3, respectively. A method was developed to separate the different components by the HPLC technique, and to determine their concentrations. The identification of the isomers in the HPLC pattern was achieved with the aid of the LC-MS method. In the selenium system, the distribution of the different species is statistical. In the system P4S3-As4S3, the formation of PAs3S3 with one phosphorus atom in the apical position is favoured.
  相似文献   

13.
The Tl2Se-As2Se3-Se system in the equilibrium crystalline state was studied by differential thermal analysis, X-ray powder diffraction, and measurements of emf relative to a thallium electrode within the temperature range 300–400 K. An isothermal section of the phase diagram at 300 K was constructed. The formation of ternary compounds Tl3AsSe4, TlAsSe2, and Tl3AsSe3 was confirmed, and the locations of their phase regions were determined. From the emf measurement data, the partial molar functions of thallium in alloys, the standard thermodynamic functions of formation, and the standard entropies of the above ternary compounds were calculated.  相似文献   

14.
Magnetic susceptibility and torque measurements of FeV2S4, FeV2Se4 and FeTi2Se4 were made using the powder and the single crystal samples. The inverse susceptibility of FeV2S4, FeV2Se4 and FeTi2Se4 changed its slope at 850, 820 and 700 K, respectively, at which temperature the order-disorder transition of cation vacancies should seem to take place. Above these temperatures the paramagnetic moment obtained for these compounds was in the range of 5.26–5.37 μB, close to that of the high spin state Fe2+. Below these temperatures the paramagnetic moment was reduced to 4.23–4.35 μB.The antiferromagnetic spin axis of FeV2S4 was in the neighborhood of the [101] direction and that of FeV2Se4 and FeTi2Se4 in the direction of the c-axis. The large magnetic anisotropy observed and the preference of the magnetic moments for the direction of the c-axis were attributed to the spin-orbit interaction of Fe2+ electrons in the trigonal crystal field.  相似文献   

15.
The PbSnS2-PbSb2S4 system was studied by physicochemical methods, and its phase diagram was plotted. The system is quasi-binary; solid solutions regions based on PbSnS2 (6 mol % PbSb2S4) and PbSb2S4 (12 mol % PbSnS2) were revealed. At a component ratio of 1: 1, a congruently melting compound Pb2SnSb2S6 is formed. Pb2SnSb2S6 single crystals were obtained by chemical transport. The unit cell parameters of Pb2SnSb2S6, which crystallizes in orthorhombic system, were determined: a = 15.22 ?, b = 10.68 ?, c = 3.90 ?.  相似文献   

16.
The interaction of components in the TlSe-Pr2Se3 system was studied by differential thermal, X-ray powder diffraction, and microstructural analyses and also by microhardness and density measurements. The state diagram of this system was constructed. It was found that the section TlSe-Pr2Se3 is a quasi-binary section of the Tl-Pr-Se ternary system. In the TlSe-Pr2Se3 system at the component ratio 1: 1, a new chemical compound, TlPr2Se4, forms, which melts congruently at 1295°C. In the system based on TlSe, solid solutions form until 3.5 mol % Pr2Se3, and in the system based on Pr2Se3, solid solutions occur until 2.5 mol % TlSe.  相似文献   

17.
Phase equilibria in the EuS-Cu2S-Nd2S3 system were studied in an isothermal (970 K) section and NdCuS2-EuS and Cu2S-EuNdCuS3 polythermal sections. The complex sulfide EuNdCuS3 has an orthorhombic crystal lattice (space group Pnma; a = 1.10438(2) nm, b = 0.40660(1) nm, c = 1.14149(4) nm), is isostructural to BaLaCuS3, and melts incongruently at 1470 K: EuNdCuS3 (0.50 EuS; 0.50 NdCuS2) ai 0.18 EuS ss (0.88 EuS; 0.12 NdCuS2) + 0.82 L (0.415 EuS; 0.585 NdCuS2); ΔH = 17.8 kJ/mol. Within the range 0.5 mol % EuS, EuNdCuS3-based solid solutions were not found. At 970 K, the tie lines pass from the compound EuNdCuS3 to Cu2S, EuS, NdCuS2, and EuNd2S4 phases and lie between the NdCuS2 phase and solid solutions (ss) of γ-Nd2S3 with EuNd2S4. Eutectics are formed between the compounds NdCuS2 and EuNdCuS3 at 32.0 mol % EuS T = 1318 K and between the compounds Cu2S and EuNdCuS3 at 20.5 mol % EuNdCuS3 and T = 1142 K. Five main subordinate triangles were identified in the system.  相似文献   

18.
Novel A4B3 Molecules in the System P4Se3–As4Se3 By means of 31P-NMR and masspectroscopic measurements in the system P4Se3–As4Se3 was shown that in the melt and vapour phase at all compositions molecules of the type P4 ? nAsnSe3 are formed. A separation was possible by liquid chromatography (RP 18-column). The concentration distribution of the different species is nearly statistical. In the solid state at ambient temperature regions of solid solubility with α-P4Se3, α+-phase, α-P4S3 and α-As4Se3 structure were observed. P3AsSe3 could be transformed into a plastically-crystalline phase with β-P4S3 structure. At higher temperatures the phase decomposes slowly. The thermal behaviour of PAs3Se3 is strongly influenced by the heating rate. Using low heating rates it decomposes into an amorphous phase, by fast heating a transformation into a metastable plastically-crystalline modification was achieved. During long extraction with CS2 molecules P4 ? nAsnS3 ? mSem are formed by an exchange reaction. They can also be prepared by melting the proper amounts of the elements.  相似文献   

19.
Compounds of the formulas BaTa0.8S3, BaNb0.8S3, and BaTa0.8Se3 were prepared by two methods: reaction of the elements in evacuated silica tubes and reaction of H2S over mixtures of BaCO3 and 0.4Ta(Nb)2O5. They have the hexagonal BaNiO3-type structure and are diamagnetic semiconductors. From the stoichiometries and properties we conclude that Nb and Ta are pentavalent.  相似文献   

20.
The Ag2Se-Tl2Se-Bi2Se3 quasi-ternary system (system A) was studied using DTA, X-ray powder diffraction, microstructure examination, and microhardness measurements. TlBiSe2-AgBiSe2, AgTlSe-AgBiSe2, AgTlSe-Bi2Se3, and Tl2Se-AgBiSe2 polytherms, isothermal sections at 500 and 800 K, and liquidus surface projection of system A were constructed. System A is congruently triangulated into the following subordinate triangles: Tl2Se-AgTlSe-Tl9BiSe6 (I), AgTlSe-Tl9BiSe6-TlBiSe2 (II), Ag2Se-AgTlSe-TlBiSe2 (III), Ag2Se-AgBiSe2-TlBiSe2 (IV), and AgBiSe2-TlBiSe2-Bi2Se3 (V). Subsystems I, III, and V are ternary systems with three-phase eutectic equilibrium; system II has a three-phase eutectic, and system IV is characterized by several invariant and monovariant peritectic and eutectic equilibria. Primary crystallization and homogeneity fields were outlined, and the types and coordinates of invariant and monovariant equilibria in system A were determined. A characteristic feature of the title system is an extensive field of solid solutions between high-temperature cubic AgBiSe2 and TlBiSe2 phases; this field lies as a continuous belt along the AgBiSe2-TlBiSe2 quasibinary section and covers about one-fourth of the surface area of the triangular diagram of system A.  相似文献   

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