Galvanomagnetic and thermomagnetic effects in compensated gallium arsenide

The kinetic effects:-Hall effect, magnetoresistance, and Nernst-Ettinghausen effect-are examined in n-type gallium arsenide having a free electron concentration at room temperature of less than 10¹⁵ cm^–3.The work was directed toward determining the dominating scattering mechanism in compensated material.At low temperatures the scattering is predominately by impurity atoms and optical vibrations (optical phonons); at high temperatures, by acoustic phonons.With simultaneous scattering by thermal vibrations and impurity ions, for temperatures T > 300 ° K, the second mechanism plays the basic role in the longitudinal Nernst-Ettinghausen effect.     

Scattering theory of electrons on impurities in compensated semiconductors

In this paper we study the temperature behavior of the electron mobility in n-type compensated semiconductors, caused by scattering on neutral, ionized, and dipole impurity centers. With increased temperature, neutral impurity atoms and paired oppositely charged donor-acceptor dipole scattering impurity centers transform into separate ionic scattering centers. These transformations of scattering centers take place at various temperatures. We find that the mobility caused by electron scattering on separate impurity ions does not change with temperature monotonically — there appear two minima under certain conditions.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 106–109, October, 1987.     

Quantum theory of free carrier absorption in polar semiconductors

A quantum mechanica treatment of the free carrier absorption by electrons in polar semiconductors has been constructed in terms of the Kane model. It takes into account overlap wavefunction factors, intermediate states in other bands, the finite optical phonon energy, and the effects of arbitrary spin orbit splitting on the electron energy and wavefunction. The scattering mechanisms considered include polar optical mode scattering, ionic scattering, piezoelectric and deformation coupled acoustic mode scattering, and electron-electron scattering.The theory, in the appropriate limits, applies to a wide range of photon energies, electron concentrations, and lattice temperatures. It relates the dominant scattering mechanism involved in the various limits to the characteristic behavior of the absorption coefficient as a function of the photon energy. In particular, the dominant scattering mechanism for small carrier concentrations is found to be polar optical mode scattering, which exhibits a λ³ dependence of the absorption coefficient times the index of refraction, (except at the lowest frequencies, where the expected λ² dependence is obtained).Ionic, or impurity, scattering becomes important as the carrier concentration is increased, and the characteristic wavelength dependence of the electron cross section times the index of refraction varies from λ⁴ to λ³, and the absorption coefficient times the index of refraction from λ⁴ to λ², depending on the ratio of the photon energy to the initial electron energies.Comparisons are made with the available data over a wide range of photon energies, temperatures, and electron concentrations, for the III–V compounds InSb, InAs, InP, and GaAs.     

Laser-fluorescence diagnostics for condensation in laser-ablated copper plasmas

We are investigating the thermodynamic conditions under which condensation occurs in laser ablated copper plasma plumes. The plasma is created by XeCl excimer laser ablation (308 nm, 300 mJ/pulse) at power densities from 500–1000 MW/cm² into backing pressures of helium in the range 0–50 torr. We use laser-induced fluorescence (LIF) to probe velocity and relative density of both atomic copper and the copper dimer molecule, Cu₂, which is formed during condensation onset. At low pressure (10 mtorr), the atomic Cu velocity peaks at approximately 2×10⁶ cm/s. Copper dimer time-of-flight data suggest that condensation onset occurs after the Cu atoms have slowed very significantly. Excitation scans of the Cu₂A-X (0,0) and (1,1) bands yield a rotational and vibrational temperature in the neighborhood of 300 K for all conditions studied. Such low temperatures support the theory that Cu₂ is formed under thermally and translationally cold conditions. Direct laser beam absorption is used to determine the number density of atomic copper. Typical densities attained with 5 torr of helium backing gas are 6–8×10¹³ cm^–3. Rayleigh scattering from particulate is easily observable under conditions favorable to particulate production.     

Investigation of the electrical and photoelectric properties of manganese-doped gallium arsenide as a material for photoresistive detectors

An investigation was made into the electrical and photoelectric properties of gallium arsenide with an initial electron density 5×10¹⁵–4×10¹⁷ cm^–3 doped with Mn in different thermodynamic diffusion regimes characterized by diffusion temperatures of 900 and 1000°C and arsenic vapor pressure 10^–2 and 10^–3 atm. The ionization energy and defect concentration were determined by a computer analysis of the equilibrium hole density determined from the Hall effect. Centers with ionization energy 0.08–0.10 eV were found, their concentration varying from 2×10¹⁹ to 2×10²⁰ cm^–3 depending on the diffusion temperature and the doping level of the original crystals. Data obtained by investigating the stationary intrinsic photoconductivity were used to determine a hole lifetime of t_p 10^–9 sec. The photoconductivity spectra were investigated in the range 0.5–2 eV at 77°K, and defects with ionization energy E_v + 0.6 eV were found in all samples. The impurity photoconductivity at wavelength 10.6 m was investigated. It was shown that GaAsMn can be used as a material for impurity photoresistors.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 15–19, March, 1981.     

Correlation of resonance scattering and superconductivity in PbxSn1−xTe solid solutions doped with In

The Hall coefficient and resistivity were measured on a series of samples of Pb_xSn_1−xTe with 0x0.45 and 5 at% of InTe as a dopant. All samples show p-type conductivity with hole concentration in the range from 10¹⁹ to 10²¹ cm⁻³ at 77 K. A slight decrease of Hall mobility and corresponding increase in the scattering cross-section of holes by impurity atoms was observed with an extremum at x=0.25. All samples exhibit a transition to a superconducting state with the critical temperatures ranging from 0.3 to 3.0 K. The maximum of dH_c2/dT (where H_c2 is the second critical field) correlates with the fall in mobility (or rise in the scattering cross-section of holes), which shows that the resonance scattering mechanism is playing an important role in the enhancement of superconducting properties of these solid solution materials.     

Scattering mechanisms in (Al, Ga)As/GaAs 2DEG structures

We have prepared a large number of high mobility two-dimensional electron gas (2DEG) structures, with undoped spacer thicknesses ranging from 9 to 3200Å. For samples with 400Å of (Al, Ga)As Si-doped at 1.3×10¹⁸ cm⁻³, there is a peak in the 4K mobility at spacers of 400–800Å, with a maximum value of 2×10⁶ cm² V⁻¹ s⁻¹. Increasing the thickness of the doped (Al, Ga)As to 500Å produced an increase in mobility to 3×10⁶ cm² V⁻¹ s⁻¹ for a 400Å space sample. We have compared these results with published analyses of scattering processes in 2DEG structures, and conclude that a combination of ionised impurity and acoustic phonon scattering gives a qualitative explanation of the behaviour, but that the experimental mobility values are generally higher than those predicted theoretically.     

Resonant elastic scattering of light from single quantum wells in semiconductor multilayers

A theory is developed for steady-state elastic scattering of light via quasi-2D excitons from a quantum well (QW) whose interfaces are randomly rough. The study is mainly focused on the angle dependences of radiation giving direct information about static disorder responsible for the elastic scattering. A nonlocal excitonic susceptibility is expressed in terms of random profile functions of QW interfaces. Treated is elastic scattering of light from a disordered QW in the following actual dielectric environments: (i) a uniform background, (ii) a Fabry–Perot film with rough boundaries, and (iii) a semiconductor microcavity. The cross-sections are derived analytically for scattering of linearly polarized light to the lowest (Born's) approximation with arbitrary roughness statistics. The spectral and angle dependencies of scattering intensity are analyzed numerically in the absolute-value scale with Gaussian correlation of interface roughness. The probability 10⁻² was found for the exciton-mediated scattering of a photon from a QW interface roughness whose root-mean-square height is on the level of 2×10⁻¹ nm. This probability is shown to exceed by two orders of magnitude that is typical of resonant scattering from either a single semiconductor surface or rough boundaries of a semiconductor Fabry–Perot film containing the QW. The scattering spectrum of a QW placed in a microcavity is predicted to have a doublet structure whose components are associated with the cavity exciton–polaritons.     

Interaction between charge carriers and foreign atoms in superfluid helium: From bound states to unusual transport

It is shown that even a small amount of impurities can drastically affect the properties of charge carriers in superfluid⁴He. Under certain conditions the effective interaction between the carrier and foreign atom turns out to be attractive at large distances. This may result in a localization of the impurity on the electric charge in superfluid⁴He. The attraction causes a significant increase in the concentration of foreign atoms near the carrier (the impurity cloud) and produces around the charge a macroscopic region of radius 50–70 Å rich with the impurity component. 2D bound states of an electron or ion near the free surface of liquid⁴He and a³He surface impurity are considered. This effect can strongly influence the motion of the charge carriers inxy-plane, which can be studied in experiments on the mobility. Photoelectric absorption of radiation due to the decay of the bound state as well as tunnelling ionization in a static electric field are discussed. An extra scattering channel due to the interaction between an impurity and the hydrodynamic backflow around the moving snowball or bubble is described. Within the velocity range 1m/s–60m/s this scattering process becomes predomonant and determines the mobility of charged particles in superfluid⁴He.     

On the transferred hyperfine interaction in substituted yig

NMR of⁵⁷Fe is studied in a number of (M_xY_3–x) Fe₅O₁₂ garnets for small concentrations of M (M is either trivalent RE ion –Ho 3+, Gd 3+, Nd3+, Pr 3+, La 3+ or Bi 3+ ion). Beside the main resonance lines, the satellites were observed, which correspond to those Fe, in vicinity of which the impurity M is located. After correcting for the dipolar field, the field corresponding to the change of the transferred hyperfine interaction in M³⁺–O^2–-Fe³⁺ vs. Y³⁺–O^2–-Fe³⁺ triad was deduced from the satellites splitting. The analysis of the results indicates that the observed change in the transferred hyperfine field is mainly connected with the transfer of electrons between M³⁺ and Fe³⁺ ions and not with the local deformation around the impurity.     

Photoluminescence and electric conductivity in germanium at low temperatures

We have studied the exciton and electron-hole droplet (EHD) luminescence in optically irradiated germanium at temperatures between 1.8 and 4.2 K in the presence of an electric field. Simultaneously the electric conductivity was measured. The sample material was high-purity Ge (N _A –N _D =7·10¹⁰ cm^–3) andp-doped Ge withN _A =3·10¹⁴ cm^–3. In the high-purity Ge samples the exciton and EHD-luminescence intensity decreased nearly linearly as a function of the applied electric current, whereas the dependence upon the electric field was more complicated. Our results could be explained by a model in which carrier annihilation at the contacts following a rapid drifting process plays a dominant role (drift model). In thep-doped Ge samples the current-dependence of the luminescence intensity was qualitatively similar. However, here the drift model is not strictly valid any more because of the reduced carrier mobility and the generation of additional carriers by impurity impact ionization. During variation of the electric field, the luminescence intensity and the electric current show hysteresis. Here the capture of the moving carriers by the EHD appears to play an important role, in addition to the EHD-nucleation process.     

Effect of boundaries and impurities on electron–phonon dephasing

Electron scattering from boundaries and impurities destroys the single-particle picture of the electron–phonon interaction. We show that quantum interference between ‘pure‘ electron–phonon and electron–boundary/impurity scattering may result in the reduction as well as to the significant enlargement of the electron dephasing rate. This effect crucially depends on the extent, to which electron scatterers, such as boundaries and impurities, are dragged by phonons. Static and vibrating scatterers are described by two dimensionless parametersq_Tl and q_TL, where q is the wavevector of the thermal phonon, l is the total electron mean-free path, L is the mean-free path due to scattering from static scatterers. According to the Pippard ineffectiveness condition , without static scatterers the dephasing rate at low temperatures is slower by the factor 1 / ql than the rate in a pure bulk material. However, in the presence of static potential the dephasing rate turns out to be 1 / qL times faster. Thus, at low temperatures electron dephasing and energy relaxation may be controlled by electron boundary/impurity scattering in a wide range.     

Change in the magnetoresistance of n-GaAs in an electric field

The effect of an electric field on the magnitude of the magnetoresistance in epitaxial n-GaAs films with free carrier concentrations n_e=4.0.10¹⁵–1.12. 10¹⁶ cm^–3 at T=4.2K was investigated. It was found that in weak electric and magnetic fields for E < E_b (E_b is the intensity of the low-temperature impurity breakdown field) the magnetoresistance (MR) is negative, and for EE_b only a positive magnetoresistance is observed. The experimental results are explained by a change in the concentration of centers with a magnetic moment and of electrons in the impurity band in prebreakdown electric fields.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 51–55, July, 1981.     

Mössbauer study of magnetic critical behavior of F0.875V0.125

The disordered alloy Fe_1–xV_x has a well defined maximum in T_c at x=0.125. Working at this value to suppress T_c broadening, we have made high precision Mössbauer measurements in the ferromagnetic region. When analyzed in terms of four hyperfine field components our spectra suggest that the sample isannealed. Fitting the hyperfine field over reduced temperatures 1.7×10^–3 < t < 5×10^–1 with corrections to scaling yields p =0.362(8), in agreement with earlier work on pure Fe, and with Fisher's predictions for annealed disordered systems.     

Features of current carrier scattering in epitaxial films

The properties of epitaxial cadmium selenide films obtained by condensation in a vacuum on mica substrates under almost equilibrium conditions are investigated. The temperature dependences of the conductivity and current carrier mobility and concentration are studied. The electron concentration in the films depended on the gas phase composition (coevaporation of CdSe + Se or CdSe + In) and varied between 5·10¹⁰cm^–3 and 3.5·10¹⁸. It is shown that the current carrier scattering mechanism depends on their concentration and production conditions. For n₁ 10¹⁶ cm^–2 (T_S520C),n₂ < 10¹⁵ (T_S=630C), scattering on intercrystallite barriers predominated. For n₁ and n₂ greater than the quantities mentioned, scattering by ionized defects becomes dominant. It is established that the magnitude of the intercrystallite barrier in films with 10¹⁵ < n < 10¹⁶ cm^–3 is comparatively small and does not exceed 4·10^–3 eV, whereupon scattering at the barriers is not explicitly manifest. Concentrations of the ionized centers, magnitudes of the intercrystallite barriers, and ionization energies of the donor levels are determined for films obtained under different conditions.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 98–103, September, 1977.     

Absolute CH concentrations in low-pressure flames measured with laser-induced fluorescence

Laser-induced fluorescence in both theA–X andB–X band systems was used to measure absolute number densities of CH radicals in 40 Torr propane/air flames at temperatures near 1600 K. The fluorescence signal was calibrated against Rayleigh scattering in N₂ and Raman scattering in H₂. In a rich flame, = 1.15, the concentration at the peak of the CH distribution was 5.8 ± 1.5 ppm, or (1.4 ± 0.4) × 10¹² cm^–3, with independent values obtained using both band systems and calibration methods in good agreement. This result compares well with a prediction of 8 ppm from a kinetic model of this flame.     

Electron-phonon interaction inP-doped silicon at low temperatures

In this present work, we explain the thermal conductivity results ofP doped silicon for impurity concentration 4.7×10¹⁷ and 1.0×10¹⁸ cm^–3 by applying the theory of scattering of phonons by electrons in the mixed state i.e. both in the localised state and in the metallic state. Using Mikoshiba's inhomogeneity model we calculated the number of electrons in the bound region and in the conduction band region and using the relaxation rates of both bound electron-phonon scattering and Ziman-Kosarev theory of free electron-phonon scattering, we explain the thermal conductivity values from 2 to 40 K. The values of density-of-states effective mass and dilatation deformation potential are found to be in agreement with the experimental values for silicon, for the electron concentration in the conduction band. We have also taken into account the effect of impurity scattering due to doped impurities, along with isotope scattering.     

Effect of dimensional and magnetic quantization hybridization in the optical absorption spectra of nanoheterosystems with <Emphasis Type="Italic">D</Emphasis><Superscript>(−)</Superscript>-states

The magnetoabsorption of light by quantum dot — D^(–)-center complexes synthesized in a transparent dielectric matrix — is theoretically studied with allowance for dispersed quantum dot (QD) sizes. In the effective mass approximation, an analytical expression for the impurity magnetoabsorption coefficient of light polarized in the quantizing magnetic polarization field direction is derived.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 67–72, October, 2004.     

Dislocation structure of kcl crystals grown with vibration of the melt

Summary The amplitude at all frequencies was 0.04 mm. Three crystals were grown at each frequency, with seeds of dislocation density D = 6 × 10⁴ cm^–2. Figure 1 shows the frequency dependence of the final D. Each point in Figs. 1 and 2 is the mean from 50 measurements (50 fields of view). At all frequencies except 180 Hz, D was 2–4 times less than that without vibration, while at 100 and 160 Hz it was less by nearly an order of magnitude.The effects of amplitude (0.02 to 0.2 mm) were examined at 100 Hz, the minimum D occurring at 0.1 mm (Fig. 2). At 0.04–0.08 mm, D was less by a factor 3–4 than for crystals grown without vibration, while at 0.1 mm it was less by an order of magnitude, being 2 × 10^–4 cm^–2. The size of the etch pits on crystals grown at amplitudes up to 0.1 mm did not differ from that for crystals grown at rest, but above 0.1 mm the size increased, by more than a factor 3 at 0.2 mm. Figure 3 illustrates these effects.Optimal vibration reduces D by improving the growth conditions (reduction of temperature gradients by mixing, more uniform impurity distribution).