A high-order spectral deferred correction strategy for low Mach number flow with complex chemistry

We present a fourth-order finite-volume algorithm in space and time for low Mach number reacting flow with detailed kinetics and transport. Our temporal integration scheme is based on a Multi-Implicit Spectral Deferred Correction (MISDC) strategy that iteratively couples advection, diffusion, and reactions evolving subject to a constraint. Our new approach overcomes a stability limitation of our previous second-order method encountered when trying to incorporate higher-order polynomial representations of the solution in time to increase accuracy. We have developed a new iterative scheme that naturally fits within our MISDC framework and allows us to conserve mass and energy while simultaneously satisfying the equation of state. We analyse the conditions for which the iterative schemes are guaranteed to converge to the fixed point solution. We present numerical examples illustrating the performance of the new method on premixed hydrogen, methane, and dimethyl ether flames.     

Concurrent implicit spectral deferred correction scheme for low-Mach number combustion with detailed chemistry

We present a parallel multi-implicit time integration scheme for the advection-diffusion-reaction systems arising from the equations governing low-Mach number combustion with complex chemistry. Our strategy employs parallelisation across the method to accelerate the serial Multi-Implicit Spectral Deferred Correction (MISDC) scheme used to couple the advection, diffusion, and reaction processes. In our approach, the diffusion solves and the reaction solves are performed concurrently by different processors. Our analysis shows that the proposed parallel scheme is stable for stiff problems and that the sweeps converge to the fixed-point solution at a faster rate than with serial MISDC. We present numerical examples to demonstrate that the new algorithm is high-order accurate in time, and achieves a parallel speedup compared to serial MISDC.     

耦合不可压流场输运方程的格子Boltzmann方法研究

基于格子Boltzmann方法,提出了求解耦合不可压缩流场输运方程的一种改进数值方法. 该方法使用格子Boltzmann方法求解流场方程,并根据流场格子模型的密度分布函数构建了输运方程的二阶离散格式. 通过二维平板通道流场输运系统验证了该方法的有效性.数值结果表明,该方法可以有效地减少计算过程中出现的非物理耗散, 并克服了传统模型所需巨大存储量的缺点.     

Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas（2DEG） regions in AlGaN/GaN high electron mobility transistors（HEMTs） are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.     

Breakdown voltage analysis of Al_0.25Ga_0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas(2DEG) regions in AlGaN/GaN high electron mobility transistors(HEMTs) are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.     

基于无结构网格单元中心有限体积法的二维对流扩散方程离散

在无结构网格单元中心有限体积法二维水流模型基础上,建立物质输运对流扩散方程离散模式.通过通量重构法和SOM(Support Operators Method),分别对输运方程的对流项和扩散项进行离散.该离散模式具有空间二阶精度,并适用于任意多边形无结构网格.通过纯对流和纯扩散算例对模型进行检验和验证,结果表明,模型能够较好地模拟物质输运的对流扩散问题.应用模型模拟瓯江河口的盐度输运,通过计算值与实测值对比,进一步检验模型.     

一种永磁磁共振中磁体涡流场的测量方法

磁共振成像（Magntic Resonance Imaging,MRI）技术是一种先进的医疗影像技术.在MRI系统中,通过梯度线圈电流快速切换方向,对待测区域施加梯度磁场,产生的梯度磁场会在其周围的金属体内激发出变化的涡旋电场,进而导致金属体内闭合的回路中产生对原来的梯度电流起抑制作用的感生电流,也就是我们所说的涡流.本文介绍了一种测量磁体涡流场的方法,结合电磁感应定律,设计了一种磁体涡流场测量装置,通过硬件采集以及软件处理的方法,将理想梯度场与实际磁场进行相减并将波形实时呈现,实验结果表明该方法可实现对磁体涡流场的测量.     

Time-Domain Numerical Solutions of Maxwell Interface Problems with Discontinuous Electromagnetic Waves

This paper is devoted to time domain numerical solutions of two-dimensional (2D) material interface problems governed by the transverse magnetic (TM) and transverse electric (TE) Maxwell's equations with discontinuous electromagnetic solutions. Due to the discontinuity in wave solutions across the interface, the usual numerical methods will converge slowly or even fail to converge. This calls for the development of advanced interface treatments for popular Maxwell solvers. We will investigate such interface treatments by considering two typical Maxwell solvers – one based on collocation formulation and the other based on Galerkin formulation. To restore the accuracy reduction of the collocation finite-difference time-domain (FDTD) algorithm near an interface, the physical jump conditions relating discontinuous wave solutions on both sides of the interface must be rigorously enforced. For this purpose, a novel matched interface and boundary (MIB) scheme is proposed in this work, in which new jump conditions are derived so that the discontinuous and staggered features of electric and magnetic field components can be accommodated. The resulting MIB time-domain (MIBTD) scheme satisfies the jump conditions locally and suppresses the staircase approximation errors completely over the Yee lattices. In the discontinuous Galerkin time-domain (DGTD) algorithm – a popular Galerkin Maxwell solver, a proper numerical flux can be designed to accurately capture the jumps in the electromagnetic waves across the interface and automatically preserves the discontinuity in the explicit time integration. The DGTD solution to Maxwell interface problems is explored in this work, by considering a nodal based high order discontinuous Galerkin method. In benchmark TM and TE tests with analytical solutions, both MIBTD and DGTD schemes achieve the second order of accuracy in solving circular interfaces. In comparison, the numerical convergence of the MIBTD method is slightly more uniform, while the DGTD method is more flexible and robust.     

Analytical modeling and simulation of subthreshold behavior in nanoscale dual material gate AlGaN/GaN HEMT

A two-dimensional (2-D) analytical model for a Dual Material Gate (DMG) AlGaN/GaN High Electron Mobility Transistor (HEMT) has been developed to demonstrate the unique attributes of this device structure in suppressing short channel effects (SCEs). The model accurately predicts the channel potential, electric field variation along the channel, and sub-threshold drain current, taking into account the effect of lengths of the two gate metals, their work functions, barrier layer thicknesses, and applied drain biases. It is seen that the SCEs and hot carrier effects in DMG AlGaN/GaN HEMT are suppressed due to the work function difference of the two metal gates, thereby screening the drain potential variations by the gate near the drain. Besides, a more uniform electric field along the channel leads to improved carrier transport efficiency. The accuracy of the results obtained from our analytical model has been verified using ATLAS device simulations.     

电磁脉冲辐射器近区场数值模拟

 电磁脉冲辐射器是便携式电磁脉冲电场屏蔽效能测试设备的关键部分。提出了一套小型电磁脉冲辐射器的方案，并采用时域有限差分法在计算机上模拟了辐射器产生的近区电磁场, 结果表明，如果高压脉冲源产生的脉冲电压为双指数波，则通过天线辐射产生的近区场的波形也为双指数波，从而，使近场参数均能达到测试设备所要求的指标，说明所提供电磁脉冲辐射器的方案为可行。     

二维电磁逆散射问题的时域高斯-牛顿反演算法

为了直接利用超宽带(UWB)时域测量数据,同时重建二维(2D)目标(OI)的介电常数和电导率,本文将频域高斯-牛顿反演(GNI)算法发展为时域形式.迭代重建过程中,正问题由时域有限差分(FDTD)法求解,而逆问题的病态特性用自适应正则化技术抑制.四类数值算例中,噪声影响均被考虑,仿真结果初步证实了改进算法的可行性和鲁棒性.重建图像呈现超分辨率(SR),有望应用到早期乳腺癌检测等实际问题中.     

电流变液与电-磁流变液的衍射特性

本文把电流变液装置作为反射光栅研究其衍射特性,首次提出由电场强度改变来调节光栅常数的概念.并讨论了同时外加电场与磁场的情况下,电磁流变液的衍射特性.     

Numerical investigation of electro hydrodynamics (EHD) enhanced water evaporation using Large Eddy Simulation turbulent model

In this paper, the electric field effect on enhancement of the water evaporation rate in a channel is numerically investigated. The coupled equations of electrical field, flow field, temperature field and species concentration fields are discretized using Finite Volume Method (FVM) and the implicit/hybrid difference form. This equations are solved via SIMPLE algorithm and the Kaptsov hypothesis. The turbulent flow is modelled by Large Eddy Simulation (LES). The numerical results show that the water evaporation rate is increased with the presence of electric field, but the effect of electric field is diminished at high Reynolds number.     

基于电磁谐振分离的宽带低雷达截面超材料吸波体

基于超材料的电磁谐振特性, 设计、制作了一种极化无关的宽带低雷达散射截面 (radar cross section, RCS)超材料吸波体. 通过场分布和反演法分析了其吸波机理, 利用波导法和空间波法测试了其吸波率和RCS特性. 理论分析表明: 在平面波的作用下, 该吸波体对某一吸波频率在不同的位置分别提供电谐振和磁谐振, 对不同的吸波频率, 利用不同的介质层提供主要的能量损耗, 从而有效减弱了电磁耦合, 保证了宽频带的强吸收特性. 实验结果表明: 设计的三层结构吸波体吸波率达90%以上的带宽是单层结构的4.25倍, RCS减缩10 dB以上的带宽为5.1%, 其单元尺寸为0.17λ, 厚度仅为0.015λ. 该吸波体的低RCS特性还具有极化无关、宽入射角的特点, 且通过改变吸波体的夹层结构可以实现工作带宽的灵活调节. 关键词： 超材料吸波体 雷达散射截面 宽带 电磁谐振     

Multigrid Solution of the Incompressible Navier–Stokes Equations for Density-Stratified Flow past Three-Dimensional Obstacles

The steady incompressible Navier–Stokes equations in three dimensions are solved for neutral and stably stratified flow past three-dimensional obstacles of increasing spanwise width. The continuous equations are approximated using a finite volume discretisation on staggered grids with a flux-limited monotonic scheme for the advective terms. The discrete equations which arise are solved using a nonlinear multigrid algorithm with up to four grid levels using the SIMPLE pressure correction method as smoother. When at its most effective the multigrid algorithm is demonstrated to yield convergence rates which are independent of the grid density. However, it is found that the asymptotic convergence rate depends on the choice of the limiter used for the advective terms of the density equation, and some commonly used schemes are investigated. The variation with obstacle width of the influence of the stratification on the flow field is described and the results of the three-dimensional computations are compared with those of the corresponding computation of flow over a two-dimensional obstacle (of effectively infinite width). Also given are the results of time-dependent computations for three-dimensional flows under conditions of strong static stability when lee-wave propagation is present and the multigrid algorithm is used to compute the flow at each time step.     

节块内嵌离散纵标(SN)方法的算法研究及程序开发

介绍节块内嵌离散纵标(S_N)方法求解三维堆芯中子输运/扩散方程的算法框架.在基于扩散理论的三维粗网节块展开方法(NEM)的算法体系中,用基于输运理论的径向二维细网节块离散纵标方法(NDOM)的内迭代过程,替代节块展开方法(NEM)内迭代的径向求解过程.该算法充分考虑了核电厂反应堆堆芯的三维结构特点,另一方面,也充分利用了已经成熟的三维粗网节块展开方法(NEM)和二维离散纵标方法(S_N)的研究成果,同时有效避免了利用离散纵标方法(S_N)求解三维中子输运方程所面临的计算内存和计算时间的瓶颈问题.编制开发二维多群节块离散纵标方法(NDOM)模块程序NS_NM和三维多群节块展开方法(NEM)模块程序MGNEM,并以此为基础编制开发节块内嵌S_N方法的模块程序HANWIND;其中,NS_NM为HANWIND求解两维问题的功能模块.针对OECD/NEA-2D C5G7MOX基准问题以及两环路核电厂三维堆芯的数值验算结果表明,节块内嵌S_N方法的算法开发及程序编制有效、切实可行.     

电磁脉冲辐射器近区场数值模拟

电磁脉冲辐射器是便携式电磁脉冲电场屏蔽效能测试设备的关键部分。提出了一套小型电磁脉冲辐射器的方案,并采用时域有限差分法在计算机上模拟了辐射器产生的近区电磁场, 结果表明,如果高压脉冲源产生的脉冲电压为双指数波,则通过天线辐射产生的近区场的波形也为双指数波,从而,使近场参数均能达到测试设备所要求的指标,说明所提供电磁脉冲辐射器的方案为可行。     

Modeling of the EHD effects on hydrodynamics and heat transfer within a flat miniature heat pipe including axial capillary grooves

A numerical model for an electrohydrodynamic (EHD) grooved Flat Miniature Heat Pipe (FMHP) is developed. Two microchannel shapes are considered as axial capillary structures: square and triangle grooves. For both groove shapes, the electric field affects the liquid-vapor radius of curvature which decreases in the condenser and increases in the evaporator under the action of the electric field. The liquid and vapor velocities are also affected by the EHD effects. The electric field effects on the velocities depend on the FMHP zone. It is also demonstrated that the electric field increases the vapor pressure drop; however, it decreases the liquid pressure drop. The liquid-wall and vapor-wall viscous forces as well as the shear liquid-vapor forces are affected by the electric field. The analysis of the electric forces shows that the dielectrophoretic forces which act on the liquid-vapor interface are predominant and their order of magnitude is much higher than the Coulomb forces. Finally, it is also demonstrated that the capillary limit increases with the electric field for both groove shapes.     

Spin-polarized transport through a time-periodic non-magnetic semiconductor heterostructure

Spin-dependent Floquet scattering theory is developed to investigate the photon-assisted spin-polarized electron transport through a semiconductor heterostructure in the presence of an external electric field. Spin-dependent Fano resonances and spin-polarized electron transport through a laser irradiated time-periodic non-magnetic heterostructure in the presence of Dresselhaus spin-orbit interaction and a gate-controlled Rashba spin-orbit interaction are investigated. The electric field due to laser along with the spin-orbit interactions help to get spin-dependent Fano resonances in the conductance, whereas the external bias can be appropriately adjusted to get a near 80% spin-polarized electron transmission through heterostructures. The resultant nature of the Floquet scattering depends on the relative strength of these two electric fields.     

Monte Carlo algorithm for drift and diffusion of ions in anisotropic,non-homogeneous media

A new Monte Carlo algorithm for ion transport in two-dimensional anisotropic media is reported. It is based on physical considerations of drift and diffusion in anisotropic media with or without an impermeable boundary. Inhomogeneities in the medium and electric field can be taken into account by averaging along the ion trajectory. The algorithm has been applied to the calculation of ion transport in liquid crystal displays and has been successfully compared with a finite difference program on a one-dimensional liquid crystal structure.