掺钠钼电极在硒化铜铟镓（CIGS）太阳能薄膜电池应用

适量钠元素对铜铟镓硒薄膜生长具有促进作用,本文主要研究了掺钠钼电极特性及其对铜铟镓硒薄膜太阳能电池性能的影响。利用磁控溅射方法制备不同厚度的钼钠/钼（MoNa/Mo）薄膜作为背电极,并在（MoNa/Mo）薄膜电极上蒸镀铜铟镓硒（CIGS）薄膜,并利用单质硒源硒化处理后制备CIGS薄膜电池。SEM和XRD结果表明采用三层叠层Mo/Mo/MoNa薄膜做电极的MoNa容易被氧化,电阻率增加,采用四层叠层Mo/Mo/MoNa/Mo薄膜电极方式有效降低电阻率,阻止MoNa被氧化,CIGS晶粒较大且致密。在同一条件下,在不同MoNa/Mo厚度电极上制备CIGS薄膜电池,80nmMoNa厚度上的CIGS薄膜电池效率达6.54%。     

掺钠钼电极在硒化铜铟镓(CIGS)太阳能薄膜电池应用

适量钠元素对铜铟镓硒薄膜生长具有促进作用,本文主要研究了掺钠钼电极特性及其对铜铟镓硒薄膜太阳能电池性能的影响。利用磁控溅射方法制备不同厚度的钼钠/钼(Mo Na/Mo)薄膜作为背电极,并在(Mo Na/Mo)薄膜电极上蒸镀铜铟镓硒(CIGS)薄膜,并利用单质硒源硒化处理后制备CIGS薄膜电池。SEM和XRD结果表明采用三层叠层Mo/Mo/Mo Na薄膜做电极的Mo Na容易被氧化,电阻率增加,采用四层叠层Mo/Mo/Mo Na/Mo薄膜电极方式有效降低电阻率,阻止Mo Na被氧化,CIGS晶粒较大且致密。在同一条件下,在不同Mo Na/Mo厚度电极上制备CIGS薄膜电池,80 nm Mo Na厚度上的CIGS薄膜电池效率达6.54%。     

太阳能电池材料-铜锌锡硫化合物薄膜制备及器件应用研究进展

锌黄锡矿结构的CZTS（铜锌锡硫）材料与目前在薄膜太阳能电池领域表现出色的黄铜矿结构的CIGS（铜铟镓硒）材料具有相似的晶体结构,且CZTS有着很好的光电性能,组成元素在地球上含量丰富,安全无毒,非常适合用来发展高效、廉价的太阳能电池.近期CZTS类太阳能电池的最高效率已达到12.6%,在科研和产业领域引起了广泛关注.在简介了“新星”太阳能电池材料CZTS的性质及薄膜太阳能电池器件的基本结构之后,重点总结了CZTS薄膜的制备方法（真空、非真空法）以及相应器件效率,其中对众多非真空制备法进行了独到的归类总结.最后,对CZTS薄膜的优化方法进行了分析,并对其未来发展方向做了展望.     

新型硒化亚锗薄膜太阳能电池

<正>无机化合物薄膜太阳能电池如碲化镉(Cd Te)和铜铟镓硒(CIGS)等电池,因具有材料用量少、产品轻质可柔性、制备能耗低、弱光和高温发电性能好等优势,从而成为太阳能电池中的热点研究领域之一。然而,因为Cd是剧毒元素,且Te、In资源非常稀缺,这些电池的大范围应用具有一定的局限性。近年来,为了降低成本和解决材料丰度问题,铜锌锡硫硒(CZTSSe)太阳能电池受到了极大的关注。该材料中各元素均属于高丰度低成本     

硫代硫酸钠滴定法测定铜铟镓硒太阳能靶材中硒

建立了测定铜铟镓硒太阳能靶材中硒的硫代硫酸钠滴定法.用硝酸– 盐酸混合液(3:1)在低温加热条件下消解铜铟镓硒靶材样品,在盐酸介质中,用亚硫酸将亚硒酸还原为单质硒沉淀与其它杂质分离,用酸溶解沉淀,在硫酸介质中,加入碘化钾,以淀粉作指示剂,用硫代硫酸钠标准溶液滴定,计算硒的含量.该方法适合质量分数为30％～70％的硒的测...     

太阳能电池通过掺杂测试

近期,《自然-通讯》期刊报道了一种控制掺杂(Doping)的方法,能提高薄膜太阳能电池的效率。新技术有助于制造低成本太阳能电池。制造薄膜太阳能电池比制造传统硅太阳能电池要便宜,但薄膜太阳能电池一般效率很低。掺杂是指在材料中掺入少量金属元素,这种方法有助提高薄膜太阳能电池效率,但制造过程有机会破坏材料的电子特性。瑞士联邦材料科学与技术实验室Lukas Kranz教授与其研究团队现在克服了这个障碍,成功在碲化镉(CdTe)太阳能电池中掺入铜。他们利用气相沉积法和温热处理法仔细地控制掺杂在CdTe     

铜锌锡硫硒薄膜太阳能电池一价金属替位的研究进展

铜锌锡硫硒(CZTSSe)电池具有组成元素丰度高且环境友好、光吸收系数高、带隙可调、高稳定性等优点,是一类非常有发展前景的新型薄膜太阳能电池.目前,CZTSSe电池最高认证效率为12.6％,与商品化铜铟镓硒(CIGS)电池相比仍然有较大差距,特别是开路电压(VOC)和填充因子(FF)偏低.开压损耗是制约CZTSSe器件...     

多晶GeSe薄膜的制备及在太阳能电池中的应用

硒化亚锗(GeSe)由于具有原材料储量丰富、绿色无毒、组成简单、稳定以及吸光系数高等优势,很适合被用于制备薄膜太阳能电池的光吸收层。然而,目前对其研究较少,其主要难点在于如何制备高质量的多晶GeSe薄膜。本工作采用物理气相沉积法制备GeSe薄膜,之后通过硫化铵溶液及退火处理,有效地将非晶GeSe转变为多晶GeSe。将其组装成简单平面薄膜结构太阳能电池器件后,相比于未处理的非晶GeSe太阳能电池,电池的光电流有了显著提升,对应的电池效率提升了13倍左右。进一步将未封装的电池放置在空气中一个月后,发现其仍能保持原有效率,证明其具有优异的稳定性。     

染料敏化太阳能电池固态电解质

染料敏化太阳能电池(DSCs)具有成本低廉、制作工艺简单、光电转换效率较高等优点,在新一代薄膜太阳能电池中,被认为是最具市场潜力的新型太阳能电池之一.电解质在染料敏化太阳能电池中起到桥梁作用,担负着还原染料、输运载流子完成电池内部循环的作用.液态电解质虽然效率高,但是易挥发和泄露,对电池的稳定性和寿命有很大的影响.因此...     

塑料太阳能电池研究进展

塑料太阳能电池是目前国际上比较活跃的研究领域,它具有制备工艺简单、可制备在柔性衬底上、材料的化学结构可调等优点.重点介绍以共轭聚合物-富勒烯衍生物混合物为活性层的体异质结结构塑料太阳能电池研究进展.从活性层薄膜的微观形态结构调控、电极接触界面、光场在电池各层中的空间分布以及叠层结构等几个方面综述了影响塑料太阳能电池效率的因素和提高效率的方法.最后简要介绍了塑料太阳能电池所面临的问题和挑战.     

激光刻蚀模板中电沉积特殊结构CIGS薄膜

本文利用激光刻蚀模板,在水溶液中电沉积制备金属铜薄膜,讨论了温度、电流、硫酸铜浓度对薄膜形貌的影响. 采用SEM对制备的铜薄膜进行表征,结果表明在沉积温度为30 ℃,沉积电流为4 A·dm^-2(表观工作电流密度),硫酸铜浓度在20 ~ 50 g·L^-1的水溶液中电沉积可以得到中空馒头状和开口碗状结构的铜薄膜. 利用激光刻蚀模板,在离子液体1-丁基-3-甲基咪唑三氟甲磺酸盐([BMI][TfO]) - 30 Vol%丙醇混合电解质中电沉积CIGS薄膜,研究了沉积电势、沉积时间对薄膜形貌的影响. SEM观察发现,在沉积电势为-1.8 V,沉积时间为1.5 h条件下电沉积可以得到近似柱状的簇状花束样的CIGS薄膜, 电沉积铜后再进一步电沉积CIGS,得到了均匀有序的鼓包柱状结构的Cu/CIGS复合薄膜. 用恒电势方波法对制备的薄膜真实表面积进行测试,计算结果表明,与无模板电沉积制备的CIGS薄膜相比,激光刻蚀模板法制备的Cu/CIGS复合薄膜的表面积提高了约8倍.     

Cu2ZnSn(S,Se)4薄膜太阳电池研究进展

CdTe和Cu(In,Ga)(S,Se)₂ (CIGSSe)光吸收材料在新型化合物半导体太阳电池研究中占据着主导地位。尽管CdTe和CIGS太阳电池拥有较高的转换效率和先进的技术,但是仍存在着一些问题,如所用材料中的元素地壳丰度低或有毒,这阻碍了其未来的大规模应用。近年来,由于Cu₂ZnSn(S,Se)₄ (CZTSSe)薄膜太阳电池使用的元素地壳含量丰富且环境友好,逐渐成为了研究的热点。CZTSSe光吸收材料被认为能够取代CdTe和CIGS成为下一代光伏技术的潜力材料。基于此,本文将简单介绍CZTSSe材料的结构、性质和制备方法。重点阐述CZTSSe材料的组装技术和沉积方法的发展和优势,如基于真空的沉积方法和基于溶液的沉积方法,简述其优缺点。此外,本文对CZTSSe组装和CZTSSe纳米晶制备方法的最新研究进展也进行了总结。最后,对CZTSSe光伏技术的一些限制因素进行了分析,并对CZTSSe薄膜电池未来的研究前景进行了展望。     

8.01% CuInGaSe2 solar cells fabricated by air-stable low-cost inks

CuInGaSe(2) (CIGS), a promising thin film solar cell material, has gained lots of attention in decades due to its high energy conversion efficiency and potential lower manufacture cost over conventional Si solar cells. As a cheaper processing method compared to vacuum-based techniques, solution-based deposition has been successfully applied to fabricate electronic devices, such as transistors and solar cells. In this paper, we reported CIGS thin film solar cells with an energy conversion efficiency reaching up to 8.01% using air-stable, low-cost inks. The newly developed inks consist of commercially available, low-cost compounds and solvents and can be processed using a variety of printing and coating techniques. More importantly, the inks can produce CIGS films free of copper selenides and amorphous carbon, two common by-products from solution-based CIGS processes. The mechanism for the transformation from metal salt precursor films to CIGS absorber thin films and the influence of selenium vapour pressure on absorber film quality and photovoltaic device performance were investigated and discussed. High-quality CIGS films with micrometer-sized crystals were obtained by using higher selenization partial pressure.     

两步法制备CIGS薄膜的工艺研究

本文主要研究了"预制层硒化法"制备铜铟镓硒(CIGS)薄膜的工艺。采用磁控溅射的方式制备In、Cu-Ga金属预制层,然后进行硒化(450℃)以及退火处理(550℃)。SEM结果表明,在室温下溅射沉积In薄膜,并且采用Mo/Cu-Ga/In/Cu-Ga/In的叠层顺序,可以获得平整致密的CIGS薄膜。XRD和SEM测量显示,以单质硒作为硒源,在450℃的硒化之后生成分离的CIS和CGS相,惰性氛围的高温退火可以使分离的CIS和CGS相互融合,形成均一化的CIGS四元化合物。在此基础上,最终完成的CIGS电池光电转换效率为7.5%。     

Photoelectrochemical water splitting using a Cu(In,Ga)Se2 thin film

The effects of surface modification and reaction conditions on the photoelectrochemical properties of polycrystalline Cu(In,Ga)Se₂ (CIGS) thin films for water splitting were studied. CIGS modified with platinum particles (Pt/CIGS) generated a cathodic photocurrent at potentials up to + 0.4 V vs. RHE at pH = 9.5. The photocurrent was stable for 16 h, which resulted in a turnover number of over 500. A CdS-inserted film (Pt/CdS/CIGS) had significantly improved properties compared to Pt/CIGS: a 0.3 V higher onset potential of cathodic photocurrent and a three-fold increase in the quantum efficiency. Our results suggest the feasibility of CIGS as a photocathode for biphotoelectrochemical water splitting.     

一步法电化学沉积Cu(In1-x,Gax)Se2薄膜的特性

在CuCl2、InCl3、GaCl3及H2SeO3组成的酸性水溶液电沉积体系中, 对Mo/玻璃衬底上一步法电沉积Cu(In1-x, Gax)Se2(简写为CIGS)薄膜进行了研究. 为了稳定溶液的化学性质, 在溶液中加入邻苯二甲酸氢钾和氨基磺酸作为pH缓冲剂, 将溶液的pH值控制在约2.5, 并提高薄膜中Ga的含量. 通过大量实验优化了溶液组成及电沉积条件, 得到接近化学计量比贫Cu 的CIGS薄膜(当Cu与In+Ga的摩尔比为1时, 称为符合化学计量比的CIGS薄膜; 当其比值为0.8-1时, 称为贫Cu或富In的CIGS 薄膜)预置层, 薄膜表面光亮、致密、无裂纹. 利用循环伏安法初步研究了一步法电沉积CIGS薄膜的反应机理, 在沉积过程中, Se4+离子先还原生成单质Se, 再诱导Cu2+、Ga3+和In3+发生共沉积. 电沉积CIGS薄膜预置层在固态硒源280 ℃蒸发的硒气氛中进行硒化再结晶, 有效改善了薄膜的结晶结构, 且成份基本不发生变化,但是表面会产生大量的裂纹.     

Use of a precursor solution to fill the gaps between indium tin oxide nanorods, for preparation of three-dimensional CuInGaS2 thin-film solar cells

We have fabricated a three-dimensional (3D) nanostructured indium tin oxide (ITO) film in which the spaces were filled by use of a Cu, In, and Ga precursor solution. This solution has potential for use in bulk heterojunction CuIn _x Ga_1?x S₂ (CIGS) thin-film solar cells. ITO nanorod films ~700 nm thick on glass substrates were synthesized by radio-frequency magnetron sputtering deposition. To ensure complete filling of the gaps in ITO nanorod films, a polymeric binder-free precursor solution was used. In addition, a two-step heating process (oxidation and sulfurization) was used after coating of the precursor solution to make a CIGS absorber film with a minimum of carbon impurities. Superstrate-type solar cell devices with 3D nanostructured films (CIGS–ITO) had a photovoltaic efficiency of 1.11 % despite the absence of a buffer layer (e.g. CdS) between the CIGS and ITO.     

Application of ICP-OES to the determination of CuIn<Subscript>1−x</Subscript>Ga<Subscript>x</Subscript>Se<Subscript>2</Subscript> thin films used as absorber materials in solar cell devices

CuIn_1–xGa_xSe₂ [CIGS; x=Ga/(In+Ga)] thin films are among of the best candidates as absorber materials for solar cell applications. The material quality and main properties of the polycrystalline absorber layer are critically influenced by deviations in the stoichiometry, particularly in the Cu/(In+Ga) atomic ratio. In this work a simple, sensitive and accurate method has been developed for the quantitative determination of these thin films by inductively coupled plasma optical emission spectrometry (ICP-OES). The proposed method involves an acid digestion of the samples to achieve the complete solubilization of CIGS, followed by the analytical determination by ICP-OES. A digestion procedure with 50% HNO₃ alone or in the presence of 10% HCl was performed to dissolve those thin films deposited on glass or Mo-coated glass substrates, respectively. Two analytical lines were selected for each element (Cu 324.754 and 327.396 nm, Ga 294.364 and 417.206 nm, In 303.936 and 325.609 nm, Se 196.090 and 203.985 nm, and Mo 202.030 and 379.825 nm) and a study of spectral interferences was performed which showed them to be suitable, since they offered a high sensitivity and no significant inter-element interferences were detected. Detection limits for all elements at the selected lines were found to be appropriate for this kind of application, and the relative standard deviations were lower than 1.5% for all elements with the exception of Se (about 5%). The Cu/(In+Ga) atomic ratios obtained from the application of this method to CIGS thin films were consistent with the study of the structural and morphological properties by X-ray diffraction (XRD) and scanning electron microscopy (SEM).     

Synthesis of colloidal nanoscaled copper-indium-gallium-selenide (CIGS) particles for photovoltaic applications

In this work, Cu(In,Ga)Se(2) (CIGS) nanoparticles were synthesized using a wet chemical method. The method is based on a non-vacuum thermal process that does not use selenization. The effects of temperature, source materials, and growth conditions on the phase and particle size were investigated. X-ray diffraction results confirm the formation of a tetragonal CIGS structure as the main phase with the purity more than 99% obtained by energy-dispersive X-ray spectroscopy (EDX). The morphology and size of the samples were investigated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Using these methods, 20-80nm particles were obtained. Through measurements of the absorption spectra of CIGS nanoparticles, the band gap of the synthesized material was determined to be about 1.44eV, which corresponds to an acceptable wavelength region for absorber layers in solar cells.