Temperature dependence of Rresistivities of SnO2-based gas sensors exposed to Co,H2, and C3H8 gases

The temperature dependence of resistivities of gas sensors made of SnO₂, Pd-doped SnO₂, and ThO₂-doped SnO₂ with Pd has been investigated in air containing reducing gases such as CO, H₂, and C₃H₈. The curves for ThO₂-doped sensors were significantly influenced by the reducing gases as compared to the sensors without ThO₂. From these results, it is found that in Pd-doped SnO₂ sensors the dopant plays an important role in oxidizing the surface of SnO₂ above 170°C, and that the addition of ThO₂ to Pd-doped SnO₂ enhances the effects of Pd by removing the adsorbed hydroxyl on SnO₂. It is also apparent that the interactions between reducing gases in air and SnO₂-based sensors depend upon the oxidizing rates of the surface of SnO₂, as well as the amounts of the adsorbed hydroxyl on SnO₂.     

液相生长热氧化法制备SnO2气体敏感薄膜

在不同的热氧化温度下,用液相生长热氧化法(RGTO)制备了SnO2薄膜。探讨了热氧化温度对SnO2薄膜结构和成分的影响,并进一步研究了不同热氧化温度下制备的SnO2薄膜的气敏性能。测试结果表明:260℃工作温度下,600℃热氧化制备的SnO2薄膜气敏元件,对氢气的灵敏度最佳。在100～1 000 mg.kg–1的氢气浓度范围内,灵敏度由47递增至70。     

Semiconducting ZnO Nanofibers as Gas Sensors and Gas Response Improvement by SnO2 Coating

ZnO nanofibers were electro‐spun from a solution containing poly 4‐vinyl phenol and Zn acetate dihydrate. The calcination process of the ZnO/PVP composite nanofibers brought forth a random network of polycrystalline würtzite ZnO nanofibers of 30 nm to 70 nm in diameter. The electrical properties of the ZnO nanofibers were governed by the grain boundaries. To investigate possible applications of the ZnO nanofibers, their CO and NO₂ gas sensing responses are demonstrated. In particular, the SnO2‐deposited ZnO nanofibers exhibit a remarkable gas sensing response to NO2 gas as low as 400 ppb. Oxide nanofibers emerge as a new proposition for oxide‐based gas sensors.     

Oscillation waveforms of SnO2-based thick-film co sensors

An oscillation phenomenon in SnO₂-based sensors, incorporating hydrophobic silica, has been noticeable when they are exposed to CO gas in air. Its waveform is a stable saw-tooth for sensors with 2 wt.% silica. Sensors with more than 5 wt.% silica, however, exhibit an oscillation with a complex wave when they are heated at higher temperature than 200°C and exposed to an appropriate high CO gas concentration. The dependences of critical conditions to be complex upon the sensor temperature, the gas concentration, and the silica contents have been examined. Also, the mechanisms of the appearance of the complex wave are discussed.     

The effects of CO,water vapor and surface temperature on the conductivity of a SnO2 gas sensor

It is shown that the conductivity of a SnO₂ gas sensor depends on the concentration of CO and H₂O in the atmosphere n which it is placed. The experimental data can be explained in a consistent manner by hypothesizing that 1) adsorbed oxygen depletes the surface electron concentration and therefore decreases the conductivity; 2) adsorbed water causes electrons to accumulate at the surface and therefore increases the conductivity; 3) CO increases the conductivity by removing adsorbed oxygen by reacting with it to form CO₂; and 4) adsorbed water catalyzes the CO to CO₂ reaction.     

光纤传感技术在气体检测方面的应用

介绍了气体传感器的主要特性与光纤传感技术在气体检测方面的应用,比较了几种光纤气体传感器的优缺点,设计了一种基于光谱吸收原理的新型开放式气体传感器,展望了光纤气体传感器的发展方向和广阔前景.     

SnO2基CO气敏材料的制备与掺杂研究

以溶胶–凝胶法制备的SnO2纳米材料为基,采用Sb2O3掺杂改性,制备出CO气敏材料。用XRD分析了材料的结构、物相和颗粒度。通过同步TGA/DSC热重分析的方法分析了材料的稳定性。结果表明:掺入w(Sb2O3)为2%时,可以抑制晶粒度的长大,同时提高了材料的稳定性。工作温度在90~110℃变化时,气敏元件电阻值波动不大((R10R20) /R10= 12%)。R10和R20分别表示元件在空气中90℃和110℃时的阻值。     

Self‐Compensation in Transparent Conducting F‐Doped SnO2

The factors limiting the conductivity of fluorine‐doped tin dioxide (FTO) produced via atmospheric pressure chemical vapor deposition are investigated. Modeling of the transport properties indicates that the measured Hall effect mobilities are far below the theoretical ionized impurity scattering limit. Significant compensation of donors by acceptors is present with a compensation ratio of 0.5, indicating that for every two donors there is approximately one acceptor. Hybrid density functional theory calculations of defect and impurity formation energies indicate the most probable acceptor‐type defects. The fluorine interstitial defect has the lowest formation energy in the degenerate regime of FTO. Fluorine interstitials act as singly charged acceptors at the high Fermi levels corresponding to degenerately n‐type films. X‐ray photoemission spectroscopy of the fluorine impurities is consistent with the presence of substitutional F_O donors and interstitial F_i in a roughly 2:1 ratio in agreement with the compensation ratio indicated by the transport modeling. Quantitative analysis through Hall effect, X‐ray photoemission spectroscopy, and calibrated secondary ion mass spectrometry further supports the presence of compensating fluorine‐related defects.     

(Cd,Co,Nb)掺杂的SnO2压敏材料的电学性质

研究了Cd对(Co，Nb)掺杂SnO2压敏材料电学性质的影响。组分为97．65％SnO2 O．75％Co2O3 0．10％Nb2O5 1．50％CdO的压敏电阻具有最大非线性系数(a=22．2)和最高的势垒(ψB=0．761eV)．当CdO的摩尔分数从0增加到3％时，(Co，Nb)掺杂SnO2压敏电阻的击穿电压从366V／mm增大到556V／mm，1kHz时的相对介电常数从1429减小到1108。晶界势垒高度测量揭示，SnO2的晶粒尺寸的减小是击穿电压增高和介电常数减小的主要原因。对Cd掺杂量增加引起SnO2晶粒减小的根源进行了解释。     

一维纳米SnO_2传感器对变压器油中气体的检测

为准确在线监测电力变压器油中溶解气体,预测其潜伏性故障,通过水热法合成了多种一维纳米SnO2材料,并以其作为气敏材料制作了旁热式气体传感器,研究了其对变压器油中析出气体乙炔的气敏性能。结果显示,各元件表现出不同的气敏性能,其中花状纳米SnO2对乙炔气体的敏感性能最优,在360℃的工作温度下,其对体积分数为1×10–4的乙炔的灵敏度达到38,响应和恢复时间分别为15 s和28 s。     

SnO2薄膜气敏光学特性的气敏机理模型

本文作者利用表面态建立一个气敏光学机理模型。较好地解释了SnO_2薄膜的气敏效应,气敏透射光谱,气敏透过率与气体浓度的指数关系,以及饱和现象等。     

SnO2-ZnO的乙醇气敏特性研究

为了解决乙醇传感器灵敏度不够高和选择性较差的问题,使用稀土金属氧化物代替贵金属及其化合物作为催化剂和添加剂制成了以SnO2-ZnO为主体的气敏材料,并对其气敏性能进行了研究.结果表明,此方法可有效提高SnO2-ZnO气敏材料对乙醇气体的灵敏度及选择性;利用制成的SnO2-ZnO气敏材料,可以生产出高灵敏度、高选择性的乙醇传感器.     

电纺SnO2纳米纤维的制备及其气敏特性

采用聚乙烯醇（PVA，Mw=80000g/mol）和五水合四氯化锡（SnCl4.5H2O）作为静电纺丝前驱液，着重研究了纺丝电压、前驱液中PVA浓度及煅烧温度等因素对纺丝过程及纤维特性的影响，并用扫描电镜（SEM）和X射线衍射（XRD）等分析手段对纤维的微观结构、表面形貌和结晶状态进行了表征。结果表明，当纺丝电压为4kV、纺丝液中PVA质量分数为7%、退火温度为700℃时，可以得到平均直径为300nm的连续SnO2纳米纤维。该纤维对乙醇的响应恢复时间小于15s，检测极限低于10×10^-9。     

Thin films of SnO2 as solid state gas sensors

Thin films of SnO₂ were prepared by the radio frequency (13.56 MHz) sputtering technique in a wide range of oxygen/argon concentrations within the sputtering system. The films were analyzed by means of transmission and scanning electron microscopy, x-ray diffractometry and Auger electron spectroscopy. The results showed the films to be polycrystalline with an average grain size of 400 Å. Room temperature resistances of as-sputtered films showed a strong dependence on the oxygen concentration in the sputtering environment. Electrical conductivity studies of these films in oxygen and in hydrogen revealed the fundamental charge transfer mechanisms in the observed gas sensitivity of the material to be due to an interaction of the hydrogen with chemisorbed oxygen ions on the semiconductor surface. Finally, a means of providing selectivity between H₂S and H₂ responses was studied.     

Sr引起的(Co,Ta)掺杂SnO2压敏陶瓷的晶粒尺寸效应

研究了SrCO3对(Co,Ta)掺杂的SnO2压敏陶瓷的微观结构和电学性质的影响。当x(SrCO3)从0增加到2.5%,该SnO2压敏陶瓷的压敏临界电场强度从318V/mm猛增到3624V/mm,而相对介电常数从1509大幅降至69。当x(SrCO3)为2.0%时,样品的压敏电场和非线性系数分别为2204V/mm和24;添加x(SrCO3)为2.5%的样品的压敏电场和非线性系数分别为3624V/mm和22。     

Preparation and gas sensitivity of WO3 hollow microspheres and SnO2 doped heterojunction sensors

Dispersed tungsten trioxide (WO₃) microsphere aggregates were prepared by chemical reduction with hydrazine hydrate in a glycol–water system, and the composites of WO₃/tin oxide (SnO₂) with different SnO₂ weight fractions were prepared by microwave refluxing. The products were characterized by x-ray diffraction, field emission scanning electron microscopy, thermogravimetric-differential thermal analysis, Fourier transform infrared spectroscopy, and the Brunauer–Emmett–Teller method. The gas-sensing characteristics based on the composites were investigated by a stationary-state gas distribution method. The results show that the noncompact WO₃ microspheres with hollow structure were obtained. The phase composition and the morphology of WO₃ were changed by SnO₂ doping. The heterojunction structure was formed between WO₃ and SnO₂, and the heterojunction sensors have high sensitivity to H₂S, NO_X, and xylene at relatively lower operating temperature, especially the sensor doped by 3% SnO₂ operating just at 90 °C for H₂S gas.     

SnO_2-Sb薄膜材料的制备及气敏性能

利用等离子体化学气相沉积法制备了ＳｎＯ２－Ｓｂ导电薄膜，测试了ＳｎＯ２－Ｓｂ的气敏效应。结果表明，该薄膜对ＮＯ２气体有较好的气敏特性。当测试温度升高，其气敏响应时间相差无几，但恢复时间变短，同时气敏灵敏度相对提高，当温度达到２００℃以上时，灵敏度基本恒定。同时还可看出，不同阻值的薄膜其气敏灵敏度相差不大。     

UV light activated gas sensor for NO2 detection

In the present study, UV light activated gas sensor was investigated for Al/Al₂O₃/p-Si and Al/TiO₂/Al₂O₃/p-Si samplesby atomic layer deposition method (ALD). Generally, in order to obtain the sensing performance, traditional metal oxide semiconductor gas sensors are operated at 100–400 °C. However, this temperature range limits their applications to flammable gases, and causes high power consumption. It is important to note that sensing performance experiments should have been performed at room temperature. With the support of UV light, gas sensors do not need to be heated and they can work at room temperature easily. For this purpose, electrical measurements have been performed on sensing performance with and without UV irradiation for dedection of NO₂ gas. With the help of UV irradition, we obtained good sensitivity at the room temperature for Al/TiO₂/Al₂O₃/p-Sistructure but under the same conditions no result was obtained for Al/Al₂O₃/p-Si structure. Without UV irradiation, there was no sensitivity for both.We observed that increasing of sensitivities at the room temperature show a direct effect of the light on the adsorbed oxygen ions. According to the relation of photocatalytic reaction and photoactivated gas sensing process, we concluded that TiO₂ might be an acceptable sensor for detection of nitrogen dioxide (NO₂) at room temperature under UV illumination.     

基于气体传感器的仿生电子鼻设计

电子鼻能够对极微量的气体进行无损伤检测,文中设计一种基于气体传感器的仿生电子鼻系统,并完成了电子鼻系统硬件电路及软件的设计,在此基础上设计了电子鼻系统的流道结构,完成了电子鼻系统整体结构的设计及能够实现电子鼻系统的整体组装。     

CeO_2掺杂引起SnO_2压敏电阻的晶粒尺寸效应

研究了掺CeO2对SnO2Co2O3Ta2O5压敏电阻器性能的影响。研究发现:随着x(CeO2)从0增加到1%,压敏电压从190 V/mm增加到205 V/mm,相对介电常数从3 317减小到2 243,晶粒平均尺寸从12.16 mm减小到6.23 mm,在晶界上的Ce4+阻碍了SnO2晶粒的生长。为了解释样品电学非线性性质的起源,笔者提出了SnO2Co2O3Ta2O5CeO2晶界缺陷势垒模型。同时,对该压敏电阻器进行了等效电路分析,试验测量与等效电路分析结果相符。