Temperature dependence of Rresistivities of SnO2-based gas sensors exposed to Co,H2, and C3H8 gases

The temperature dependence of resistivities of gas sensors made of SnO₂, Pd-doped SnO₂, and ThO₂-doped SnO₂ with Pd has been investigated in air containing reducing gases such as CO, H₂, and C₃H₈. The curves for ThO₂-doped sensors were significantly influenced by the reducing gases as compared to the sensors without ThO₂. From these results, it is found that in Pd-doped SnO₂ sensors the dopant plays an important role in oxidizing the surface of SnO₂ above 170°C, and that the addition of ThO₂ to Pd-doped SnO₂ enhances the effects of Pd by removing the adsorbed hydroxyl on SnO₂. It is also apparent that the interactions between reducing gases in air and SnO₂-based sensors depend upon the oxidizing rates of the surface of SnO₂, as well as the amounts of the adsorbed hydroxyl on SnO₂.     

液相生长热氧化法制备SnO2气体敏感薄膜

在不同的热氧化温度下,用液相生长热氧化法(RGTO)制备了SnO2薄膜。探讨了热氧化温度对SnO2薄膜结构和成分的影响,并进一步研究了不同热氧化温度下制备的SnO2薄膜的气敏性能。测试结果表明:260℃工作温度下,600℃热氧化制备的SnO2薄膜气敏元件,对氢气的灵敏度最佳。在100～1 000 mg.kg–1的氢气浓度范围内,灵敏度由47递增至70。     

Semiconducting ZnO Nanofibers as Gas Sensors and Gas Response Improvement by SnO2 Coating

ZnO nanofibers were electro‐spun from a solution containing poly 4‐vinyl phenol and Zn acetate dihydrate. The calcination process of the ZnO/PVP composite nanofibers brought forth a random network of polycrystalline würtzite ZnO nanofibers of 30 nm to 70 nm in diameter. The electrical properties of the ZnO nanofibers were governed by the grain boundaries. To investigate possible applications of the ZnO nanofibers, their CO and NO₂ gas sensing responses are demonstrated. In particular, the SnO2‐deposited ZnO nanofibers exhibit a remarkable gas sensing response to NO2 gas as low as 400 ppb. Oxide nanofibers emerge as a new proposition for oxide‐based gas sensors.     

掺Sm2O3的SnO2纳米粉体对C2H2气敏特性的研究

用化学沉淀法制备了SnO2纳米材料,利用XRD和SEM对合成产物进行了表征.采用旁热式结构制成了以SnO2为基体材料,掺杂Sm2O3的气体传感器.通过元件对C2H2气敏特性的测试表明:Sm2O3的掺杂可以明显地提高SnO2气敏材料对C2H2气体的灵敏度,当工作温度为180℃,C2H2浓度为1000ppm时,元件的灵敏度为64,响应恢复时间分别为3和20s.讨论了不同相对湿度对元件气敏特性的影响.     

掺Sm2O3的SnO2纳米粉体对C2H2气敏特性的研究

用化学沉淀法制备了SnO2纳米材料,利用XRD和SEM对合成产物进行了表征.采用旁热式结构制成了以SnO2为基体材料,掺杂Sm2O3的气体传感器.通过元件对C2H2气敏特性的测试表明:Sm2O3的掺杂可以明显地提高SnO2气敏材料对C2H2气体的灵敏度,当工作温度为180℃,C2H2浓度为1000ppm时,元件的灵敏度为64,响应恢复时间分别为3和20s.讨论了不同相对湿度对元件气敏特性的影响.     

Oscillation waveforms of SnO2-based thick-film co sensors

An oscillation phenomenon in SnO₂-based sensors, incorporating hydrophobic silica, has been noticeable when they are exposed to CO gas in air. Its waveform is a stable saw-tooth for sensors with 2 wt.% silica. Sensors with more than 5 wt.% silica, however, exhibit an oscillation with a complex wave when they are heated at higher temperature than 200°C and exposed to an appropriate high CO gas concentration. The dependences of critical conditions to be complex upon the sensor temperature, the gas concentration, and the silica contents have been examined. Also, the mechanisms of the appearance of the complex wave are discussed.     

The effects of CO,water vapor and surface temperature on the conductivity of a SnO2 gas sensor

It is shown that the conductivity of a SnO₂ gas sensor depends on the concentration of CO and H₂O in the atmosphere n which it is placed. The experimental data can be explained in a consistent manner by hypothesizing that 1) adsorbed oxygen depletes the surface electron concentration and therefore decreases the conductivity; 2) adsorbed water causes electrons to accumulate at the surface and therefore increases the conductivity; 3) CO increases the conductivity by removing adsorbed oxygen by reacting with it to form CO₂; and 4) adsorbed water catalyzes the CO to CO₂ reaction.     

光纤传感技术在气体检测方面的应用

介绍了气体传感器的主要特性与光纤传感技术在气体检测方面的应用,比较了几种光纤气体传感器的优缺点,设计了一种基于光谱吸收原理的新型开放式气体传感器,展望了光纤气体传感器的发展方向和广阔前景.     

光纤气体传感检测技术研究

光谱吸收型光纤气体传感器可以实现对气体的准确、快速、高灵敏度的检测,结合原理和典型系统综述了五种检测方法,其中单波长光谱吸收检测、差分检测、谐波检测技术发展得比较成熟,并且开始应用在石油化工等领域,而光腔衰荡光谱技术（CRDS）和有源腔气体检测技术是近几年刚兴起的新技术,具有实际吸收光程长,检测精度不受光源强度及其变化影响的特性,是很有发展潜力的光谱吸收检测技术。     

SnO_2基CO气敏材料的制备与掺杂研究

以溶胶–凝胶法制备的SnO2纳米材料为基,采用Sb2O3掺杂改性,制备出CO气敏材料。用XRD分析了材料的结构、物相和颗粒度。通过同步TGA/DSC热重分析的方法分析了材料的稳定性。结果表明:掺入w(Sb2O3)为2%时,可以抑制晶粒度的长大,同时提高了材料的稳定性。工作温度在90~110℃变化时,气敏元件电阻值波动不大((R10R20) /R10= 12%)。R10和R20分别表示元件在空气中90℃和110℃时的阻值。     

Self‐Compensation in Transparent Conducting F‐Doped SnO2

The factors limiting the conductivity of fluorine‐doped tin dioxide (FTO) produced via atmospheric pressure chemical vapor deposition are investigated. Modeling of the transport properties indicates that the measured Hall effect mobilities are far below the theoretical ionized impurity scattering limit. Significant compensation of donors by acceptors is present with a compensation ratio of 0.5, indicating that for every two donors there is approximately one acceptor. Hybrid density functional theory calculations of defect and impurity formation energies indicate the most probable acceptor‐type defects. The fluorine interstitial defect has the lowest formation energy in the degenerate regime of FTO. Fluorine interstitials act as singly charged acceptors at the high Fermi levels corresponding to degenerately n‐type films. X‐ray photoemission spectroscopy of the fluorine impurities is consistent with the presence of substitutional F_O donors and interstitial F_i in a roughly 2:1 ratio in agreement with the compensation ratio indicated by the transport modeling. Quantitative analysis through Hall effect, X‐ray photoemission spectroscopy, and calibrated secondary ion mass spectrometry further supports the presence of compensating fluorine‐related defects.     

(Cd,Co,Nb)掺杂的SnO2压敏材料的电学性质

研究了Cd对(Co，Nb)掺杂SnO2压敏材料电学性质的影响。组分为97．65％SnO2 O．75％Co2O3 0．10％Nb2O5 1．50％CdO的压敏电阻具有最大非线性系数(a=22．2)和最高的势垒(ψB=0．761eV)．当CdO的摩尔分数从0增加到3％时，(Co，Nb)掺杂SnO2压敏电阻的击穿电压从366V／mm增大到556V／mm，1kHz时的相对介电常数从1429减小到1108。晶界势垒高度测量揭示，SnO2的晶粒尺寸的减小是击穿电压增高和介电常数减小的主要原因。对Cd掺杂量增加引起SnO2晶粒减小的根源进行了解释。     

一维纳米SnO_2传感器对变压器油中气体的检测

为准确在线监测电力变压器油中溶解气体,预测其潜伏性故障,通过水热法合成了多种一维纳米SnO2材料,并以其作为气敏材料制作了旁热式气体传感器,研究了其对变压器油中析出气体乙炔的气敏性能。结果显示,各元件表现出不同的气敏性能,其中花状纳米SnO2对乙炔气体的敏感性能最优,在360℃的工作温度下,其对体积分数为1×10–4的乙炔的灵敏度达到38,响应和恢复时间分别为15 s和28 s。     

射频反应磁控溅射掺杂MWCNTs的SnO2薄膜NO2气敏传感器的研究

采用射频反应磁控溅射方法制备了氧化锡/多壁碳纳米管（SnO2/MWCNTs）薄膜材料,并在此基础上研制NO2气敏传感器。采用X射线衍射仪（XRD）、X光电子能谱仪（XPS）、扫描电子显微镜（SEM）来研究WO3/MWCNTs材料的表面形貌、表面化学状态、表面化学元素等材料特性,研究结果表明MWCNTs已经掺杂进SnO2材料,合成的SnO2/MWCNTs气敏传感器表现出对低浓度（甚至低于10ppb）的NO2气体有较高的灵敏度和较好的反应-恢复特性,并解释了该传感器的工作机理是基于pn结（P型MWCNTs和N型SnO2)作用的结果。     

SnO2薄膜气敏光学特性的气敏机理模型

本文作者利用表面态建立一个气敏光学机理模型。较好地解释了SnO_2薄膜的气敏效应,气敏透射光谱,气敏透过率与气体浓度的指数关系,以及饱和现象等。     

基于中红外LED的CO2气体浓度检测系统研究

介绍了基于中红外LED的CO2气体浓度检测系统。通过运用差分吸收和相关检测等手段提高系统灵敏度,系统在检测0%～10%CO2浓度条件下,示值误差约为±0.9%。实验结果与理论数据得到良好的吻合,对LED实现气体检测提供了新思路。     

SnO_2-ZnO的乙醇气敏特性研究

为了解决乙醇传感器灵敏度不够高和选择性较差的问题,使用稀土金属氧化物代替贵金属及其化合物作为催化剂和添加剂制成了以SnO2-ZnO为主体的气敏材料,并对其气敏性能进行了研究。结果表明,此方法可有效提高SnO2-ZnO气敏材料对乙醇气体的灵敏度及选择性;利用制成的SnO2-ZnO气敏材料,可以生产出高灵敏度、高选择性的乙醇传感器。     

电纺SnO2纳米纤维的制备及其气敏特性

采用聚乙烯醇（PVA，Mw=80000g/mol）和五水合四氯化锡（SnCl4.5H2O）作为静电纺丝前驱液，着重研究了纺丝电压、前驱液中PVA浓度及煅烧温度等因素对纺丝过程及纤维特性的影响，并用扫描电镜（SEM）和X射线衍射（XRD）等分析手段对纤维的微观结构、表面形貌和结晶状态进行了表征。结果表明，当纺丝电压为4kV、纺丝液中PVA质量分数为7%、退火温度为700℃时，可以得到平均直径为300nm的连续SnO2纳米纤维。该纤维对乙醇的响应恢复时间小于15s，检测极限低于10×10^-9。     

Thin films of SnO2 as solid state gas sensors

Thin films of SnO₂ were prepared by the radio frequency (13.56 MHz) sputtering technique in a wide range of oxygen/argon concentrations within the sputtering system. The films were analyzed by means of transmission and scanning electron microscopy, x-ray diffractometry and Auger electron spectroscopy. The results showed the films to be polycrystalline with an average grain size of 400 Å. Room temperature resistances of as-sputtered films showed a strong dependence on the oxygen concentration in the sputtering environment. Electrical conductivity studies of these films in oxygen and in hydrogen revealed the fundamental charge transfer mechanisms in the observed gas sensitivity of the material to be due to an interaction of the hydrogen with chemisorbed oxygen ions on the semiconductor surface. Finally, a means of providing selectivity between H₂S and H₂ responses was studied.     

Sr引起的(Co,Ta)掺杂SnO2压敏陶瓷的晶粒尺寸效应

研究了SrCO3对(Co,Ta)掺杂的SnO2压敏陶瓷的微观结构和电学性质的影响。当x(SrCO3)从0增加到2.5%,该SnO2压敏陶瓷的压敏临界电场强度从318V/mm猛增到3624V/mm,而相对介电常数从1509大幅降至69。当x(SrCO3)为2.0%时,样品的压敏电场和非线性系数分别为2204V/mm和24;添加x(SrCO3)为2.5%的样品的压敏电场和非线性系数分别为3624V/mm和22。