介孔SiO2纳米棒的制备及其表面锚接金纳米粒子

 以正硅酸乙酯为硅源,十六烷基三甲基溴化铵为模板剂,聚乙二醇为分散剂,采用溶胶-凝胶法制备出SiO₂纳米粒子,应用透射电镜、扫描电镜、X射线衍射仪、红外光谱仪和X射线能谱仪研究了粒子的性能。结果表明：所得产物是具有周期性规则介孔的棒状粒子,长径比随着硅源、模板剂和分散剂浓度的降低而减小;向反应体系中引入乙醇,随着乙醇与水的体积比例的增加,粒子由棒状向球状转变,进而形成不规则絮状凝聚体。用硅烷化技术对SiO₂纳米棒表面进行修饰后吸附平均粒径3.7 nm的金种子,再用多轮生长法使种子长大,经过30轮生长,种子平均粒径增大至59 nm,得到了SiO₂-Au复合纳米体系。透射电镜和紫外-可见分光光度计分析结果表明：金纳米粒子锚接在SiO₂纳米棒表面的某些点位,呈分散分布;复合体系表现出强烈的金的表面等离子体共振吸收峰,该峰随着金粒子的粒径增大,在500~700 nm波段内红移。     

碱液修饰对硅纳米线阵列电池光谱响应的影响

采用金属催化化学腐蚀法在p型(100)硅基底上制备了硅纳米阵列,然后用碱溶液对纳米线阵列进行修饰。分别研究了碱液修饰对硅纳米线阵列形貌、光电性质的影响。研究表明: 与绒面及纳米线阵列相比,碱修饰30 s硅纳米线阵列的表面分散均匀,反射率降低;光谱响应度显著提高,并且出现最大量子效率对应波长红移现象。最后,详细讨论了碱液修饰硅纳米线阵列电池对光谱响应的影响机制。     

高定向石墨表面金纳米粒子和金纳米线的研究

利用真空沉积方法在高定向石墨(HOPG)基底上直接制备了粒径分布较小的金纳米粒子.超高真空扫描隧道显微镜(STM)研究发现,在74℃退火后,表观直径为2.5?nm的金纳米粒子在HOPG基底上形成了排列均匀的准一维纳米粒子链,并且此金纳米粒子链结构稳定.在122℃退火后,不同粒径的金纳米粒子在HOPG基底表面上聚合长大形成了准一维金纳米线.这一发现为制备由金粒子组成的有序纳米结构开辟了探索途径.     

高定向石墨表面金纳米粒子和金纳米线的研究

利用真空沉积方法在高定向石墨(HOPG)基底上直接制备了粒径分布较小的金纳米粒子.超高真空扫描隧道显微镜(STM)研究发现,在74℃退火后,表观直径为2.5nm的金纳米粒子在HOPG基底上形成了排列均匀的准一维纳米粒子链,并且此金纳米粒子链结构稳定.在122℃退火后,不同粒径的金纳米粒子在HOPG基底表面上聚合长大形成了准一维金纳米线.这一发现为制备由金粒子组成的有序纳米结构开辟了探索途径.     

表面修饰碳纳米管/二氧化钛复合光催化剂制备及催化活性研究

采用溶胶-凝胶法在聚乙烯吡咯烷酮(PVP)修饰的碳纳米管表面均匀沉积纳米级二氧化钛粒子制得复合光催化剂。采用透射电子显微镜(TEM)、X射线衍射仪(XRD)、紫外-可见吸收光谱仪(UV-Vis)和X射线光电子能谱仪(XPS)等手段对复合光催化剂进行表征。结果表明,二氧化钛粒子是呈球形、团聚,随机沉积在未修饰碳纳米管任意表面,甚至部分碳纳米管表面是完全裸露的。经PVP修饰后的碳纳米管,二氧化钛纳米粒子均匀沉积在碳纳米管表面,二氧化钛为纯锐钛矿晶体结构,没有金红石和板钛矿相。表面修饰碳纳米管/二氧化钛复合光催化剂在紫外光照射下降解亚甲基蓝,相比纯的二氧化钛和碳纳米管/二氧化钛复合光催化剂,具有非常高的催化活性。     

不同表面结构的金纳米粒子荧光性质.

"研究了具有不同表面结构的金纳米粒子：裸金纳米粒子、三苯基膦修饰的金纳米粒子、巯基丙酸表面取代的金纳米粒子的荧光性质,及其对CdSe纳米粒子的荧光猝灭作用．发现不同的金纳米粒子荧光信号受粒子表面一价金离子与配体分子之间相互作用的影响,其荧光强度对其表面分子具有强烈的敏感性;具有不同表面结构的金纳米粒子对CdSe纳米粒子的荧光猝灭作用不同,与其吸收光谱和CdSe纳米粒子发射光谱的重叠程度相关."     

脉冲激光沉积法制备的纳米硅薄膜的结构与光学性质

采用二次阳极氧化法,制备了多孔氧化铝模板。在真空背景下,用脉冲激光沉积法,在多孔氧化铝模板上沉积一层硅,制成了硅与多孔氧化铝的复合膜,然后用盐酸将多孔氧化铝模板完全腐蚀掉,制备均匀分布着硅纳米线的硅膜。用扫描电子显微镜、X射线衍射、光致发光对纳米硅的结构和光学性质进行了测试分析。结果表明:硅纳米线的直径约为67.5nm,长度约为100nm,数密度约10¹¹/cm²。光致发光谱是可见光范围内的一个宽发射峰,上面叠加了许多具有精细结构的尖峰,尖峰之间的波长间隔不相等,但能量间隔相等。分析了样品的结构特点,利用量子限制模型和表面发光中心模型对光谱进行了解释,提出了一个新的能级模型,求出了各个尖峰对应激发态能级的量子数。为探讨纳米硅的发光机制和实现硅发光器件的制备提供了实验依据。     

纳米TiO2的表面能态及光生电子-空穴对复合过程的研究

以液相法制备了水溶态纳米TiO2,并通过X射线衍射(XRD)、X射线光电子能谱(XPS)和傅里叶红外光谱仪(FTIR)对纳米TiO2的结构和组成作了细致分析.并对其紫外-可见光谱(UY-Vis spectrum)和荧光发光光谱(PL spectrum)进行了分析.结果发现纳米TiO2呈现较好的锐钛矿型,平均粒径为5 nm.水溶态纳米TiO2由于吸附而在表面形成了Ti-OH和Ti-H2O的表面态,其能级位于其价带以上约0.6和0.54eV;500℃热处理后样品的表面吸附水基本消失,但OH-仍然存在,同时在纳米TiO2晶格中出现了氧空位,其能级位于价带以上3.13 eV.对于水溶态纳米TiO2,表面复合是电子-空穴对的主要复合过程;热处理后的样品,由于表面态遭到破坏,粒子半径变大,直接复合成为电子-空穴对的主要复合过程,同时还伴随有通过氧空位的间接复合和通过Ti-OH的表面复合.     

异质结型CuO/ZnO复合纳米线的制备及光催化性能

在室温下,通过溶液法在Cu衬底上制备了CuO纳米线,然后采用溶剂热法在CuO纳米线表面生长ZnO纳米颗粒以构建CuO/ZnO复合纳米线异质结构.利用扫描电镜、透射电镜、X射线衍射仪和X射线光电子能谱分析了样品的形貌、结构和元素组成.结果显示CuO/ZnO复合纳米线由ZnO纳米颗粒和CuO纳米线组成.在模拟太阳光照射下,...     

桑色素修饰金纳米粒子自组装膜的制备及其性能研究

采用水相硅烷化方法,将γ-氨基丙基三乙氧基硅烷[H₂N(CH₂)₃Si(OC₂H₅)₃](APES)组装在石英表面,在基底表面修饰上氨基为末端的单层膜,并进一步在这种功能化的单层膜基底上组装金纳米粒子得到金纳米粒子/APES/石英的纳米复合结构。以制备的金纳米粒子自组装膜修饰石英为基底及DL-半胱胺酸为中介,利用桑色素(Morin)和DL-半胱胺酸的化学吸附作用,将桑色素间接组装在金纳米粒子自组装膜修饰石英基底表面,所构建的桑色素修饰金纳米粒子自组装膜对三苯基锡有灵敏的荧光识别作用。文章着重研究了桑色素修饰金纳米粒子自组装膜的制备以及组装条件对其荧光行为的影响,探讨了膜的响应特性及响应机理。     

Y掺杂Si纳米线的光致发光特性

以n型单晶Si(111)为衬底,利用Au作为催化剂,在温度、N₂流量和生长时间分别为1 100 ℃,1.5 L·min-1和60 min的条件下,基于固-液-固生长机制,生长了直径为60～80 nm、长度为数十微米的高密度Si纳米线。随后,以Y₂O₃粉末为掺杂源,采用高温扩散方法对Si纳米线进行了钇(Y)掺杂。利用扫描电子显微镜、X射线衍射仪和荧光分光光度计对不同掺杂温度(900～1 200 ℃)、掺杂时间(15～60 min)和N₂流量(0～400 sccm)等工艺条件下制备的Y掺杂Si纳米线的形貌、成分、结晶取向以及激发光谱和发射光谱特性进行了详细的测量和表征。结果表明,在掺杂温度为1 100 ℃,N₂流量为200 sccm、掺杂时间为30 min和激发波长为214 nm时,Y掺杂Si纳米线样品表现出较好的发光特性。样品分别在470～500和560～600 nm范围内出现了两条发光谱带。560～600 nm的发光带由两个发光峰组成,峰位分别为573.6和583.8 nm,通过结构分析可以推测,这两个发光峰是由Y3+在Si纳米线的带隙中引入的杂质能级引起的。而470～500 nm较宽的发光带同样来源于Y离子在Si纳米线带隙中引入的与非晶SiO_x壳层中氧空位能级十分接近的杂质能级。     

Si纳米线的固-液-固可控生长及其形成机理分析

以Au膜作为金属催化剂,直接从n-(111)Si单晶衬底上制备了直径为30—60nm和长度从几微米到几十微米的高质量Si纳米线.实验研究了Au膜层厚、退火温度、N2气流量和生长时间对Si纳米线形成的影响.结果表明,通过合理选择和优化组合上述各种工艺条件,可以实现直径、长度、形状和取向可控的纳米线生长.基于固-液-固生长机理,定性阐述了Si纳米线的形成过程.     

Room temperature NO_2 gas sensing of Au-loaded tungsten oxide nanowires/porous silicon hybrid structure

In this work, we report an enhanced nitrogen dioxide(NO_2) gas sensor based on tungsten oxide(WO_3)nanowires/porous silicon(PS) decorated with gold(Au) nanoparticles. Au-loaded WO_3 nanowires with diameters of 10 nm–25 nm and lengths of 300 nm–500 nm are fabricated by the sputtering method on a porous silicon substrate. The high-resolution transmission electron microscopy(HRTEM) micrographs show that Au nanoparticles are uniformly distributed on the surfaces of WO_3 nanowires. The effect of the Au nanoparticles on the NO_2-sensing performance of WO_3 nanowires/porous silicon is investigated over a low concentration range of 0.2 ppm–5 ppm of NO_2 at room temperature(25℃). It is found that the 10-? Au-loaded WO_3 nanowires/porous silicon-based sensor possesses the highest gas response characteristic. The underlying mechanism of the enhanced sensing properties of the Au-loaded WO_3 nanowires/porous silicon is also discussed.     

Silicon nanowires synthesized by vapor–liquid–solid growth on excimer laser annealed thin gold film

The fabrication of Si nanowires has been demonstrated using excimer laser annealed thin gold film as the catalyst and vapor–liquid–solid (VLS) growth. Au nanoparticles with mean diameters of 12, 13 and 15 nm were formed by excimer laser annealing (ELA) of Au film with thickness of 2.5, 5 and 10 nm, respectively. The results show that the silicon nanowires (SiNWs) with desired diameter can be obtained by controlling the Au film thickness and laser power density.     

Synthesis of SERS active Au nanowires in different noncoordinating solvents

Au nanowires with length up to micrometers were synthesized through a simple and one-pot solution growth method. HAuCl₄ was reduced in a micellar structure formed by 1-octadecylamine and oleic acid in hexane, heptane, toluene and chloroform, respectively. As the non-polarity of noncoordinating solvents can affect the nucleation and growth rates of Au nanostructures, Au nanowires with different diameters could be obtained by changing the noncoordinating solvents in the synthetic process. The influences of the solvents on the morphology of Au nanowires were systematically studied. When using hexane as reaction solvent, the product turned to be high portion of Au nanowires with more uniform size than the others. Furthermore, surface-enhanced Raman scattering (SERS) spectrum of 2-thionaphthol was obtained on the Au nanowire-modified substrate, indicating that the as-synthesized Au nanowires have potential for highly sensitive optical detection application.     

Growth and use of metal nanocrystal assemblies on high-density silicon nanowires formed by chemical vapor deposition

In this paper, we describe the growth and potential application of metal nanocrystal assemblies on metal-catalyzed, CVD-grown silicon nanowires (SiNWs). The nanowires are decorated by chemical assembly of closely spaced (1–5 nm) Ag (30–100 nm diameter) and Au (5–25 nm diameter) nanocrystals formed from solutions of AgNO₃ and NaAuCl₄·2H₂O, respectively. The formation and growth of metal nanocrystals is believed to involve the galvanic reduction of metal ions from solution and the subsequent oxidation of available Si-hydride sites on the surfaces of the nanowires. A native oxide layer suppresses formation of metal nanocrystals; adding HF to the ionic solutions significantly increases the density of nanocrystals on the surfaces of the nanowires. The nanocrystals coating the nanowires were characterized by X-ray photoelectron spectroscopy, scanning electron microscopy, and X-ray diffraction. Ag nanocrystals on the nanowires afford sensitive detection of Rhodamine 6G (R6G) molecules in the 100 picomolar–micromolar range by surface enhanced Raman spectroscopy. In addition, Au nanocrystals formed on selected surfaces of a substrate of arbitrary shape can serve as effective nuclei for localized nanowire growth. PACS 81.07.b; 81.15.Gh     

A first principle study of encapsulated and functionalized silicon nanotube of chirality (6,6) with monoatomically thin metal wires of Ag,Au and Cu

First principle calculations have been performed to study the influence of interaction of monoatomically thin metal nanowires of Ag, Au and Cu placed inside (encapsulation) and outside (functionalization) the silicon nanotube having armchair conformation with chirality (6,6). The cohesive energy for all the encapsulated and functionalized systems under study was found to be almost same. In comparison to the pristine silicon nanotube (SiNT) which is found to be semiconducting in nature, all the encapsulated and functionalized systems of SiNT are found to be metallic in nature. The calculated electronic band structures show that the conductance in case of Ag, Au and Cu nanowires encapsulation is 2G₀. However, its value for functionalized Ag, Au and Cu nanowires is found to be 1G₀, 2G₀ and 4G₀ for the outside positioning of nanowires respectively. Optical properties of all the encapsulated and functionalized SiNTs have been studied. All the systems under study show reflectivity in the infrared (IR) region and behave as non-absorbing transparent conductors in the visible region.     

化学气相沉积法制备Zn2GeO4纳米线及其发光性质的研究

利用化学气相沉积法（CVD）,气-液-固（VLS）生长法则在表面溅有金属Au催化剂层的1 cm×1 cm的Si片上制备三元Zn₂GeO₄纳米线。X射线衍射仪（XRD）测试结果表明,锌源与锗源质量比为8：1时可成功制备出Zn₂GeO₄纳米结构;扫描电子显微镜（SEM）测试结果表明,Zn₂GeO₄纳米线直径为100 nm,长度为10~11 μm;光致发光（PL）测试结果表明,Zn₂GeO₄纳米线在432和480 nm处具有两个发光峰,最后对其生长机理进行了分析。     

Au-assisted electroless etching of silicon in aqueous HF/H2O2 solution

The Au-assisted electroless etching of p-type silicon substrate in HF/H₂O₂ solution at 50 °C was investigated. The dependence of the crystallographic orientation, the concentration of etching solution and the silicon resistivity on morphology of etched layer was studied. The layers formed on silicon were investigated by scanning electron microscopy (SEM). It was demonstrated that although the deposited Au on silicon is a continuous film, it can produce a layer of silicon nanowires or macropores depending on the used solution concentration.     

Ni掺杂浓度对硅纳米线光电性质的影响

利用基于密度泛函理论的第一性原理,对不同直径和浓度Ni掺杂硅纳米线的形成能、能带结构、态密度和光学性质进行了计算,结果表明：杂质Ni的形成能随硅纳米线直径的减小和掺杂浓度的降低而下降,这说明直径越大的硅纳米线掺杂越困难,杂质浓度越高的硅纳米线越不稳定. Ni掺杂在费米能级附近及带隙中引入杂质能级,其主要来自Ni的3d轨道,杂质能级扩展成杂质带,改变Ni的掺杂浓度可改变硅纳米线的带隙,改善其导电性. 另外,还发现掺杂浓度明显改变了硅纳米线的吸收强度和宽度.