Analytic function to describe interfaces and resolution consistency in sputter depth profiling

A simple analytical function is derived to describe the interface shapes measured in sputter depth profiling by using X‐ray photoelectron spectroscopy or secondary ion mass spectrometry. This function involves the convolution of a central Gaussian function, often taken to describe the roughness, together with an exponential tail to describe mixing and an exponential approach often taken to describe an information depth. This model is consistent with Hofmann's mixing‐roughness‐information model that does the same by numerical analysis, but we present a direct analytical function that is more transparent to the user. The differential of the function gives Dowsett's function for delta layers. Depending on which of the 3 base parameters are identified as sample related, the analyst can obtain the centroid of the underlying composition. These functions are used to show the extent that the common measure of depth resolution for step edges and delta functions diverge as the profile becomes less Gaussian.     

Effect of SIMS ionization probability on depth resolution for organic/inorganic interfaces

Secondary ion mass spectrometry (SIMS) relies on the fact that surface particles ejected from a solid surface are ionized under ion bombardment. By comparing the signal of molecular secondary ions desorbed from an organic film with that of the corresponding sputtered neutral precursor molecules, we investigate the variation of the molecular ionization probability when depth profiling through the film to the substrate interface. As a result, we find notable variations of the ionization probability both at the original surface and in the interface region, leading to a strong distortion of the measured SIMS depth profile. The experiments show that the effect can act in two ways, leading either to an apparent broadening or to an artificial sharpening of the observed film‐substrate transition. As a consequence, we conclude that care must be taken when assessing interface location, width, or depth resolution from a molecular SIMS depth profile.     

VAMAS interlaboratory study on organic depth profiling

We present the results of a VAMAS (Versailles project on Advanced Materials and Standards) interlaboratory study on organic depth profiling, in which twenty laboratories submitted data from a multilayer organic reference material. Individual layers were identified using a range of different sputtering species (C₆₀ⁿ⁺, Cs⁺, SF₅⁺ and Xe⁺), but in this study only the C₆₀ⁿ⁺ ions were able to provide truly ‘molecular’ depth profiles from the reference samples. The repeatability of profiles carried out on three separate days by participants was shown to be excellent, with a number of laboratories obtaining better than 5% RSD (relative standard deviation) in depth resolution and sputtering yield, and better than 10% RSD in relative secondary ion intensities. Comparability between laboratories was also good in terms of depth resolution and sputtering yield, allowing useful relationships to be found between ion energy, sputtering yield and depth resolution. The study has shown that organic depth profiling results can, with care, be compared on a day‐to‐day basis and between laboratories. The study has also validated three approaches that significantly improve the quality of organic depth profiling: sample cooling, sample rotation and grazing angles of ion incidence. © Crown copyright 2010.     

Experimental shift allowance in the deconvolution of SIMS depth profiles

We study the deconvolution of the secondary ion mass spectrometry (SIMS) depth profiles of silicon and gallium arsenide structures with doped thin layers. Special attention is paid to allowance for the instrumental shift of experimental SIMS depth profiles. This effect is taken into account by using Hofmann's mixing‐roughness‐information depth model to determine the depth resolution function. The ill‐posed inverse problem is solved in the Fourier space using the Tikhonov regularization method. The proposed deconvolution algorithm has been tested on various simulated and real structures. It is shown that the algorithm can improve the SIMS depth profiling relevancy and depth resolution. The implemented shift allowance method avoids significant systematic errors of determination of the near‐surface delta‐doped layer position. Copyright © 2013 John Wiley & Sons, Ltd.     

SIMS depth profiling of ‘frozen’ samples: in search of ultimate depth resolution regime

We have performed secondary ion mass spectrometry depth profiling analysis of III–V based hetero‐structures at different target temperatures and found that both the surface segregation and surface roughness caused by ion sputtering can be radically reduced if the sample temperature is lowered to ?150 °C. The depth profiling of ‘frozen’ samples can be a good alternative to sample rotation and oxygen flooding used for ultra‐low‐energy depth profiling of compound semiconductors. Copyright © 2016 John Wiley & Sons, Ltd.     

A new approach to express ToF SIMS depth profiling

We propose a new approach to express SIMS depth profiling on a TOF.SIMS‐5 time‐of‐flight mass spectrometer. The approach is based on the instrument capability to independently perform raster scans of sputter and probe ion beams. The probed area can be much smaller than the diameter of a sputter ion beam, like in the AES depth profiling method. This circumstance alleviates limitations on the sputter beam–raster size relation, which are critical in other types of SIMS, and enables analysis on a curved‐bottomed sputter crater. By considerably reducing the raster size, it is possible to increase the depth profiling speed by an order of magnitude without radically degrading the depth resolution. A technique is proposed for successive improvement of depth resolution through profile recovery with account for the developing curvature of the sputtered crater bottom in the probed area. Experimental study of the crater bottom form resulted in implementing a method to include contribution of the instrumental artifacts in a nonstationary depth resolution function within the Hofmann's mixing–roughness–information depth model. The real‐structure experiment has shown that the analysis technique combining reduction of a raster size with a successive nonstationary recovery ensures high speed of profiling at ~100 µm/h while maintaining the depth resolution of about 30 nm at a 5 µm depth. Copyright © 2015 John Wiley & Sons, Ltd.     

Comparison of depth resolution from a microscopically modulated Rh/C film after sputter profiling by SIMS and SNMS

Sputter depth profiles of an Rh/C microscopically modulated thin film (double layer thickness 7 nm) were obtained by low energy SIMS and SNMS. The depth resolution was obtained using the linear superposition of error functions at the interfaces. In optimal cases the depth resolution was shown to be of the order of 1–2 nm for both techniques.     

Surface characterization and depth profiling of biological molecules by electrospray droplet impact/SIMS

Electrospray droplet impact (EDI) was applied to the analysis of peptides. The etching rate of bradykinin was estimated to be ~2 nm/min. This value is about one order of magnitude greater than the etching rate for SiO₂ (0.2 nm/min). Considering that the etching rate of argon cluster ions Ar₇₀₀⁺ for organic compounds is more than two orders of magnitude larger than that for inorganic materials, the rather small difference in etching rates of EDI for organic and inorganic materials is unique. When water/ethanol (1/1, vol%) solution of gramicidin S and arginine was dried in air, [gramicidin S + H]⁺ was observed as a predominant signal with little [Arg + H]⁺ right after the EDI irradiation, indicating that EDI is capable of detecting the analytes enriched on the sample surface. Copyright © 2011 John Wiley & Sons, Ltd.     

Measurement of sputtering yields and damage in C60 SIMS depth profiling of model organic materials

Sputter‐depth profiles of model organic thin films on silicon using C₆₀ primary ions have been employed to measure sputtering yields and depth resolution parameters. We demonstrate that some materials (polylactide, Irganox 1010) have a constant and high sputtering yield, which varies linearly with the primary ion energy, whereas another material (Alq₃) has lower, fluence‐dependent sputtering yields. Analysis of multi‐layered organic thin films reveals that the depth resolution is a function of both primary ion energy and depth, and the sputtering yield depends on the history of sputtering. We also show that ～30% of repeat units are damaged in the steady‐state regime during polylactide sputtering. Crown Copyright © 2006. Reproduced with the permission of Her Majesty's Stationery Office. Published by John Wiley & Sons, Ltd.     

Spatial determination of gold catalyst residue used in the production of ZnO nanowires by SIMS depth profiling analysis

In this paper we demonstrate how secondary ion mass spectrometry (SIMS) can be applied to ZnO nanowire structures for gold catalyst residue determination. Gold plays a significant role in determining the structural properties of such nanowires, with the location of the gold after growth being a strong indicator of the growth mechanism. For the material investigated here, we find that the gold remains at the substrate–nanowire interface. This was not anticipated as the usual growth mechanism associated with catalyst growth is of a vapour–liquid–solid (VLS) type. The results presented here favour a vapour–solid (VS) growth mechanism instead. Copyright © 2007 John Wiley & Sons, Ltd.     

An investigation of hydrogen depth profiling using ToF‐SIMS

Hydrogen depth distributions in silicon, zinc oxide, and glass are of great interest in material research and industry. Time‐of‐flight SIMS has been used for hydrogen depth profiling for many years. However, some critical information, such as optimal instrumental settings and detection limits, is not easily available from previous publications. In this work, optimal instrumental settings and detection limits of hydrogen in silicon, zinc oxide, and common glass were investigated. The recommended experimental settings for hydrogen depth profiling using time‐of‐flight SIMS are: (i) keeping pressure in the analysis chamber as low as possible, (ii) using a cesium beam for sputtering and monitoring the H^– signal, (iii) employing monatomic ion analysis beams with the highest currents, and (iv) using interlace mode. In addition, monatomic secondary ions from a matrix are recommended as references to normalize the H^– signal. Detection limits of hydrogen are limited by the pressure of residual gases in the analysis chamber. The base pressure of the analysis chamber (with samples) is about 7 × 10^?10 mbar in this study, and the corresponding detection limits of hydrogen in silicon, zinc oxide, and common glass are 1.3 × 10¹⁸ atoms/cm³, 1.8 × 10¹⁸ atoms/cm³, and 5.6 × 10¹⁸ atoms/cm³, respectively. Copyright © 2011 John Wiley & Sons, Ltd.     

Quantitative SIMS depth profiling of Al in AlGaN/AlN/GaN HEMT structures with nanometer‐thin layers

The possibilities of quantitative secondary ion mass spectrometry (SIMS) depth profiling of Al in AlxGa1 ? xN/AlN/GaN transistor heterostructures are shown. Using a series of test structures for a TOF.SIMS‐5 time‐of‐flight mass spectrometer, we obtained a refined linear calibration dependence of the secondary‐ion yield on the composition ×, namely, Y(CsAl+)/Y(CsGa+) = K × x/(1 ? x), with a high linear correlation coefficient, Rl = 0.9996, which permits quantitative SIMS analysis of relatively thick AlGaN barrier layers. The method of profile reconstruction with allowance for the main artifacts of ion sputtering has been first applied for the analysis of GaN/AlGaN/AlN/GaN high electron mobility transistor structure. This method permits to perform quantitative analysis of the thickness and composition of a nanometer‐thin AlN sublayer and to estimate the measurement error. For the structure being studied, the AlN sublayer is 1.2 ± 0.2 nm thick. Copyright © 2016 John Wiley & Sons, Ltd.     

New horizons in sputter depth profiling inorganics with giant gas cluster sources: Niobium oxide thin films

X‐ray photoelectron spectroscopy is used to study a wide variety of material systems as a function of depth (“depth profiling”). Historically, Ar⁺ has been the primary ion of choice, but even at low kinetic energies, Ar⁺ ion beams can damage materials by creating, for example, nonstoichiometric oxides. Here, we show that the depth profiles of inorganic oxides can be greatly improved using Ar giant gas cluster beams. For NbO_x thin films, we demonstrate that using Ar_x⁺ (x = 1000‐2500) gas cluster beams with kinetic energies per projectile atom from 5 to 20 eV, there is significantly less preferential oxygen sputtering than 500 eV Ar⁺ sputtering leading to improvements in the measured steady state O/Nb ratio. However, there is significant sputter‐induced sample roughness. Depending on the experimental conditions, the surface roughness is up to 20× that of the initial NbO_x surface. In general, higher kinetic energies per rojectile atom (E/n) lead to higher sputter yields (Y/n) and less sputter‐induced roughness and consequently better quality depth profiles. We demonstrate that the best‐quality depth profiles are obtained by increasing the sample temperature; the chemical damage and the crater rms roughness is reduced. The best experimental conditions for depth profiling were found to be using a 20 keV Ar₂₅₀₀⁺ primary ion beam at a sample temperature of 44°C. At this temperature, there is no, or very little, reduction of the niobium oxide layer and the crater rms roughness is close to that of the original surface.     

A statistical approach to delta layer depth profiling

We present a simple statistical model describing the removal and relocation of material during a sputter depth profiling experiment. All input parameters are determined from low‐fluence molecular dynamics simulations, making the model de facto parameter free. The model can be used to extrapolate data from the molecular dynamics simulations to projectile fluences relevant to sputter depth profiling experiments. As a result, the erosion of the surface is calculated in terms of fluence‐dependent filling factors of different sample layers. Using input data determined for the 20‐keV C₆₀ cluster bombardment of silicon, it is found that a steady‐state erosion profile is reached after removal of approximately 20 monolayer equivalents of material. Plotting the contribution of particles from a specific layer to the instantaneous sputtered flux, one can directly determine the delta layer response function predicted from such a model. It is shown that this function can be parameterized by the semiempirical Dowsett response function, and the resulting fitting parameters are compared with published depth profile data. The model is then used to study the role of different processes influencing the observed depth resolution. We find that the statistical nature of the sputtering process suffices to explain many features of experimentally measured delta layer depth profiles. Copyright © 2012 John Wiley & Sons, Ltd.     

A wavelet‐PCA method saves high mass resolution information in data treatment of SIMS molecular depth profiles

A detailed depth characterization of multilayered polymeric systems is a very attractive topic. Currently, the use of cluster primary ion beams in time‐of‐flight secondary ion mass spectrometry allows molecular depth profiling of organic and polymeric materials. Because typical raw data may contain thousands of peaks, the amount of information to manage grows rapidly and widely, so that data reduction techniques become indispensable in order to extract the most significant information from the given dataset. Here, we show how the wavelet‐based signal processing technique can be applied to the compression of the giant raw data acquired during time‐of‐flight secondary ion mass spectrometry molecular depth‐profiling experiments. We tested the approach on data acquired by analyzing a model sample consisting of polyelectrolyte‐based multilayers spin‐cast on silicon. Numerous wavelet mother functions and several compression levels were investigated. We propose some estimators of the filtering quality in order to find the highest ‘safe’ approximation value in terms of peaks area modification, signal to noise ratio, and mass resolution retention. The compression procedure allowed to obtain a dataset straightforwardly ‘manageable’ without any peak‐picking procedure or detailed peak integration. Moreover, we show that multivariate analysis, namely, principal component analysis, can be successfully combined to the results of the wavelet‐filtering, providing a simple and reliable method for extracting the relevant information from raw datasets. Copyright © 2016 John Wiley & Sons, Ltd.     

A simple erosion dynamics model of molecular sputter depth profiling

A simple model which describes the essential features commonly observed in a molecular sputter depth profile is presented. General predictions of the dependence of measured molecular ion signals on the primary ion fluence are derived for the specific case where a mass spectrometric technique such as SIMS or secondary neutral mass spectrometry (SNMS) is used to analyze the momentary surface. The results are compared with recent experimental data on molecular depth profiles obtained by cluster‐ion‐initiated SIMS of organic overlayers. Copyright © 2008 John Wiley & Sons, Ltd.     

Characterization of size‐segregated aerosols using ToF‐SIMS imaging and depth profiling

Size‐segregated particles were collected with a ten‐stage micro‐orifice uniform deposit impactor from a busy walkway in a downtown area of Hong Kong. The surface chemical compositions of aerosol samples from each stage were analyzed using time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) operated in the static mode. The ToF‐SIMS spectra of particles from stage 2 (5.6–10 µm), stage 6 (0.56–1 µm), and stage 10 (0.056–0.1 µm) were compared, and the positive ion spectra from stage 2 to stage 10 were analyzed with principal component analysis (PCA). Both spectral analysis and PCA results show that the coarse‐mode particles were associated with inorganic ions, while the fine particles were associated with organic ions. PCA results further show that the particle surface compositions were size dependent. Particles from the same mode exhibited more similar surface features. Particles from stage 2 (5.6–10 µm), stage 6 (0.56–1 µm), and stage 10 (0.056–0.1 µm) were further selected as representatives of the three modes, and the chemical compositions of these modes of particles were examined using ToF‐SIMS imaging and depth profiling. The results reveal a non‐uniform chemical distribution from the outer to the inner layer of the particles. The coarse‐mode particles were shown to contain inorganic salts beneath the organics surface. The accumulation‐mode particles contained sulfate, nitrate, ammonium salts, and silicate in the regions below a thick surface layer of organic species. The nucleation‐mode particles consisted mainly of soot particles with a surface coated with sulfate, hydrocarbons, and, possibly, fullerenic carbon. The study demonstrated the capability of ToF‐SIMS depth profiling and imaging in characterizing both the surface and the region beneath the surface of aerosol particles. It also revealed the complex heterogeneity of chemical composition in size and depth distributions of atmospheric particles. Copyright © 2014 John Wiley & Sons, Ltd.     

An effect of measurement conditions on the depth resolution for low‐energy dual‐beam depth profiling using TOF‐SIMS

An effect of measurement conditions on the depth resolution was investigated for dual‐beam time of flight‐secondary ion mass spectrometry depth profiling of delta‐doped‐boron multi‐layers in silicon with a low‐energy sputter ion (200 eV – 2 keV O₂⁺) and with a high‐energy primary ion (30 keV Bi⁺). The depth resolution was evaluated by the intensity ratio of the first peak and the subsequent valley in B⁺ depth profile for each measurement condition. In the case of sputtering with the low energy of 250 eV, the depth resolution was found to be affected by the damage with the high‐energy primary ion (Bi⁺) and was found to be correlated to the ratio of current density of sputter ion to primary ion. From the depth profiles of implanted Bi⁺ primary ion remaining at the analysis area, it was proposed that the influence of high‐energy primary ion to the depth resolution can be explained with a damage accumulation model. Copyright © 2013 John Wiley & Sons, Ltd.     

Investigating the chain conformations of spin‐coated polymer thin films by ToF‐SIMS depth profiling

Thin films of bromine‐terminated poly(bisphenol A octane ether) (BA‐C10) were prepared using 1,2‐dichlorobenzene (ODCB) as the solvent. The organization of the chains in these amorphous polymer films was evaluated using time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) depth profiling. For the thin films, the bifunctional polymer chains were folded and anchored to the substrate via their two Br end groups and a polymer brush of chain loops was formed on the substrate. As the film thickness increased, polymer chains in a random coil conformation were found to reside on the top of the polymer brush. Depth profiling revealed that the polymer chains were densely packed at the interface. Moreover, the polymer films showed thermal stability, implying strong interactions between the end groups and the substrate. Copyright © 2015 John Wiley & Sons, Ltd.