Comparative study on structure and properties of titanium/silicon mono‐ and co‐doped amorphous carbon films deposited by mid‐frequency magnetron sputtering

The titanium/silicon mono‐ and co‐doped amorphous carbon films were deposited by mid‐frequency magnetron sputtering Ti target, Si target, and Ti80S20 alloy target, respectively. The effects of doped elements on the composition, surface morphology, microstructure, and mechanical and tribological properties of the films were investigated. The results reveal that the ratio of sp³ and sp² carbon bonds of the films is regulated between 0.28 and 0.62 by a combination of Ti and Si dopant. The addition of small amounts of silicon leads to an increase in sp³ bonds and disorder degree of the sp² carbon. The co‐doped film exhibits significantly superior friction performance than the mono‐doped films. The ultra‐low friction (μ < 0.01) was achieved under a load of 2 N in ambient air with 40% RH. By comparing to the mono‐and co‐doped films, it is thought that the sp³/sp² ratio of the films may play a key role for the superlow friction. Copyright © 2013 John Wiley & Sons, Ltd.     

Effects of negative bias on the structural,topological and tribological properties of amorphous carbon films prepared by magnetron sputtering

Amorphous carbon films were prepared in a magnetron sputtering system at different d.c. negative substrate biases (?50, ? 100, ? 150, ? 200 and ? 250 V). The surface roughness, hardness and tribological properties of as‐deposited films were investigated based on the films' structural evolution. Compared with the films deposited at the negative bias of ? 50 and ? 250 V, the microstructure and bond configuration of the films deposited at negative bias of ? 150 V favored a more graphite‐like structure, which had the maximum of graphiticclusters and ordering structures; meanwhile, the films deposited at bias of ? 150 V showed the minimum coefficient of friction (COF) in air, while the wear rate showed a decrease of two orders of magnitude. The tribotesting results were attributed to the increase of graphitic domains of amorphous carbon films which decreased the interfacial shear force and lowered the COF. The uniform and ordering structure induced steady and smooth friction curves. Copyright © 2010 John Wiley & Sons, Ltd.     

The structure and tribological properties of aluminum/carbon nanocomposite thin films synthesized by reactive magnetron sputtering

Hydrogenated nanocomposite aluminum/carbon thin films (Al/a‐C:H) were fabricated on stainless steel and silicon wafer substrates via unbalanced reactive magnetron sputtering from an Al target in CH₄/Ar plasma. The composition and structure of Al/a‐C:H films were investigated by high‐resolution transmission electron microscope (HRTEM), XPS and micro‐Raman spectroscopy. Nanoindenter, interferometer and ball‐on‐disc tribometer were carried out to evaluate the hardness, internal stress and tribological properties of Al/a‐C:H films. HRTEM observations confirmed that the metallic Al nanocrystallites were uniformly dispersed in the amorphous carbon matrix. XPS and Raman analyses indicated that the sp² content increased with the increase of Al content in the films. Nanoindenter and interferometer tests exhibited that the uniform incorporation of Al nanocrystallites can diminish drastically the magnitude of internal stress with maintaining the higher hardness of as‐deposited films. Especially, the ball‐on‐disc tribometer measurements revealed that the nanocomposite film with 2.3 at.% Al content exhibited relatively better wear resistance and self‐lubrication performance with a friction coefficient of 0.06 and wear rate of 3.1 × 10^?16 m³/ N·m under ambient air, which can be attributed to the relatively higher hardness, the formation of continuous graphitized transfer film on counterface and the reduced reaction of oxygen with carbon. Copyright © 2010 John Wiley & Sons, Ltd.     

Properties of ITO films prepared by reactive magnetron sputtering

Indium tin oxide (ITO) thin films were deposited by mid frequency pulsed dual magnetron sputtering using a metallic alloy target with 10 wt.% tin in an atmosphere of argon and oxygen. The aim of the work was to study the interdependence of structural, electrical and optical properties of ITO films deposited in the reactive and transition target mode, respectively. The deposition rate in the transition mode exceeds the deposition rate in the reactive mode by a factor of six, a maximum value of 100 nm·m min⁻¹ could be achieved. This corresponds to a static deposition rate of 200 nm min⁻¹. The lowest electrical resistivity of 1.1·10⁻³ Ω cm was measured at samples deposited in the high oxygen flow range in the transition mode. The samples show a good transparency in the visible range corresponding to extinction coefficients being below 10⁻². X-ray diffraction was used to characterise crystalline structure as well as film stress. ITO films prepared in the transition mode show a slightly preferred orientation in (211) direction, whereas films deposited in the reactive mode are strongly (222) oriented. Compared to undoped In₂O₃ all samples have an enlarged lattice. The lattice strain perpendicular to the surface is about 0.8% and 2.0% for films grown in the transition and the reactive mode, respectively. Deposition in the transition mode introduces a biaxial film stress in the range of −300 MPa, while stress in reactive mode samples is −1500 MPa.     

Comparative study of microstructure and tribological behavior of TiC/a‐C:H and a‐C:H coatings in a sand‐dust environment

TiC/a‐C:H and a‐C:H nanocomposite coatings were prepared on AISI 440C steel substrates using magnetron sputtering process. A comparative study was made on their composition and microstructure by Raman spectroscopy and high‐resolution transmission electron microscopy (HRTEM). The tribological properties of two types of carbon‐based coatings were investigated by pin‐on‐disc tribometer under the sand‐dust conditions concerning the influence of applied load, amount of sand and sand particle sizes. The results show that these carbon‐based coatings exhibited high tribological performance with low friction coefficient and wear rate under the sand‐dust environments. However, the TiC/a‐C:H coatings exhibit relatively higher fluctuant friction coefficient as well as higher wear rate in comparison with the a‐C:H coatings under sand‐dust environments. The formation of nanocrystalline hard TiC phase distributed in amorphous carbon matrix decreased the residual stress but significantly increased the hardness and Young's modulus of TiC/a‐C:H coatings, and consequently caused a relatively higher abrasive and fatigue wear loss under the sand‐dust conditions. Copyright © 2010 John Wiley & Sons, Ltd.     

Study on the layer structure of W/C multilayers deposited by magnetron sputtering using x‐ray reflectivity

A study on the layer structure of W/C multilayers deposited by magnetron sputtering is reported. In the study, soft x‐ray resonant reflectivity and hard x‐ray grazing incidence reflectivity of the W/C multilayers were measured. The imperfections at the interface such as interdiffusion and formation of compounds were dealt with by two methods. On analyzing the experimental results, we found that the incorporation of an interlayer was a more suitable method than the traditional statistical method to describe the layer structure of a W/C system we fabricated. The optical constants of each layer at a wavelength of 4.48 nm were also obtained from the analysis. Copyright © 2008 John Wiley & Sons, Ltd.     

The chemical composition and bonding structure of B–C–N–H thin films deposited by reactive magnetron sputtering

The chemical composition and bonding structures of B–C–N–H films fabricated by medium frequency magnetron sputtering, with N₂+CH₄+Ar gas mixture sputtering the boron target, were investigated. XPS and FTIR spectrometric analyses show that the increase of CH₄ flow rate during deposition causes an increase of the C content in the films. The increase in the CH₄ flow rate promotes an increase in the B–C, C–N single and C?N double bonds which are the components of the hybridized B–C–N bonding structure. From the results of Raman spectroscopy analysis, it is seen that the intensity of the D band of the films' Raman spectrum decreases with increasing CH₄ flow rate, indicating a decrease of the sp²‐phase content or the sp² C cluster size. The decreases of I_D/I_G also reflect the formation of more boron‐ or nitrogen‐ bound sp³‐coordinated carbons in the films. Copyright © 2009 John Wiley & Sons, Ltd.     

Studies of Cu‐doped ZnS thin films prepared by sputtering technique

Radio frequency magnetron sputtering technique has been used to deposit Cu‐doped ZnS thin films on glass and n‐type Si(100) substrates at room temperature. Crystalline structure, surface morphology, and elemental oxidation states have been studied by X‐ray diffraction, field emission scanning electron microscopy, atomic force microscopy, and X‐ray photoelectron spectroscopy. Ultraviolet–visible spectroscopy has been employed to measure the transmittance, reflectance, and absorbance properties of coated films. The deposited thin films crystallize in zinc blende or sphalerite phases as proved by X‐ray diffraction analysis. The intensity of diffraction peaks decreases with increasing the dopant concentrations. The predominant diffraction peak related to (111) plane of ZnS is observed at 28.52° along with other peaks. The peak positions are shifted to higher angles with an increase of Cu concentrations. X‐ray photoelectron spectroscopy studies show that Cu is present in +1 oxidation state. Transmittance, reflectance, and absorbance properties of the deposited films have a slight variation with dopant concentrations. Copyright © 2016 John Wiley & Sons, Ltd.     

Effects of sputtering current on the bonding structure and mechanical properties of diamond‐like carbon films deposited by MFPUMST

Diamond‐like carbon (DLC) films on glass wafers were produced by middle frequency pulsed unbalanced magnetron sputtering technique (MFPUMST) at different sputtering current. The chemical bonding of carbon characterized by Raman spectroscopy and X‐ray photoelectron spectroscopy (XPS) show that the sp³ fraction in DLC films increases with increasing sputtering current from 100 to 300 mA, and then decreases above 300 mA. Mechanical properties like nano‐hardness and elastic recovery for these films under different sputtering currents analyzed by a nano‐indentation technique show the same tendency that nano‐hardness and elastic recovery increase with increasing sputtering current from 100 to 300 mA, and then decrease with increasing sputtering current from 300 to 400 mA. These results indicate that the sp³ fraction in the prepared DLC films is directly related to nano‐hardness and elastic recovery. The results shown above indicate that the parameter of the preparation—sputtering current has a strong influence on the bonding configuration of the deposited DLC films. The mechanism of sputtering current on the sp³ fraction is discussed in this paper. Copyright © 2009 John Wiley & Sons, Ltd.     

Exploiting carbon‐based (Cr,Ce)/a‐C:H nanocomposite film on cemented WC

Cemented tungsten carbide (WC) has widely served in modern industry because of its outstanding characteristics, while it could suffer from severely wear both under ambient air and water environments. To exploit a novel carbon‐based film should be a feasible way to modify the surface of cemented WC and overcome these shortcomings. In the present study, the Cr/Ce co‐incorporated (Cr,Ce)/a‐C:H carbon‐based film was successfully deposited on cemented WC. The microstructure and mechanical properties of films were systematically characterized, and their tribological behaviors were tested in ambient air and deionized water environment. The results showed that (Cr,Ce)/a‐C:H film dominated by the typical amorphous structure and the doping Cr existed with the metallic Cr nanocrystallites as well as Ce formed CeO₂. The (Cr,Ce)/a‐C:H film could possess good mechanical performances, which could own higher hardness, elastic module, low internal stress, and better adhesive strength. Especially, the as‐prepared (Cr,Ce)/a‐C:H film could present relatively lower friction coefficient and wear rate compared to uncoated cemented WC both under ambient air and deionized water environment, indicating that the Cr/Ce co‐doped (Cr,Ce)/a‐C:H film could be an effective method to modify the surface of cemented WC so as to improve the friction and wear performances of cemented WC materials.     

Structural,chemical and nanomechanical investigations of SiC/polymeric a-C:H films deposited by reactive RF unbalanced magnetron sputtering

Amorphous carbon (or diamond-like carbon, DLC) films have shown a number of important properties usable for a wide range of applications for very thin coatings with low friction and good wear resistance. DLC films alloyed with (semi-)metals show some improved properties and can be deposited by various methods. Among those, the widely used magnetron sputtering of carbon targets is known to increase the number of defects in the films. Therefore, in this paper an alternative approach of depositing silicon-carbide-containing polymeric hydrogenated DLC films using unbalanced magnetron sputtering was investigated. The influence of the C₂H₂ precursor concentration in the deposition chamber on the chemical and structural properties of the deposited films was investigated by Raman spectroscopy, X-ray photoelectron spectroscopy and elastic recoil detection analysis. Roughness, mechanical properties and scratch response of the films were evaluated with the help of atomic force microscopy and nanoindentation. The Raman spectra revealed a strong correlation of the film structure with the C₂H₂ concentration during deposition. A higher C₂H₂ flow rate results in an increase in SiC content and decrease in hydrogen content in the film. This in turn increases hardness and elastic modulus and decreases the ratio H/E and H³/E². The highest scratch resistance is exhibited by the film with the highest hardness, and the film having the highest overall sp³ bond content shows the highest elastic recovery during scratching.     

The effect of thermal annealing on the microstructure and mechanical properties of magnetron sputtered hydrogenated amorphous carbon films

Hydrogenated amorphous carbon films were deposited by magnetron sputtering of a carbon target in a methane/argon atmosphere. A postdeposition annealing at 300 °C was performed and the microstructure, bonding structure and mechanical properties of the as‐deposited and annealed films were analyzed and compared directly by high‐resolution transmission electron microscopy, micro‐Raman spectroscopy, XPS, and nanoindentation. The results showed that the carbon films are quite stable upon annealing, since there are only minor changes in microstructure and chemical bonding in the amorphous matrix. The hardness of the films remained unaffected, but the elastic properties were somewhat deteriorated. In comparison to the outcomes of our previous work on the growth of fullerene‐like hydrogenated carbon films, we can state that the formation of fullerene‐like carbon structures requires different sputtering process conditions, such as a higher ion energy and/or different sputtering target. Copyright © 2011 John Wiley & Sons, Ltd.     

Non‐hydrogenated amorphous germanium carbide with adjustable microstructure and properties: a potential anti‐reflection and protective coating for infrared windows

Amorphous non‐hydrogenated germanium carbide (a‐Ge_1?xC_x) films have been deposited using magnetron co‐sputtering technique by varying the sputtering power of germanium target (P_Ge). The effects of P_Ge on composition and structure of the a‐Ge_1?xC_x films have been analyzed. The FTIR spectrum shows that the C–Ge bonds were formed in the a‐Ge_1?xC_x films according to the absorption peak at ~610 cm^?1. The Raman results indicate that the amorphous films also contain both Ge and C clusters. The XPS results reveal that the carbon concentration decreased as P_Ge increased from 40 to 160 W. The fraction of sp³ C–C bonds remains almost constant when increasing P_Ge from 40 to 160 W. The sp² C–C content of a‐Ge_1?xC_x film decreases gradually to 35.9% with P_Ge up to 160 W. Nevertheless, sp³ C–Ge sites rose with increasing P_Ge. Furthermore, the hardness and the refractive index gradually increased with increasing P_Ge. The excellent optical transmission of annealed a‐Ge_1–xC_x double‐layer coating at 400 °C suggests that a‐Ge_1?xC_x films can be used as an effective anti‐reflection coating for the ZnS IR window in the wavelength region of 8–12 µm, and can endure higher temperature than hydrogenated amorphous germanium carbide do. Copyright © 2012 John Wiley & Sons, Ltd.     

Surface characterization of CuSn thin films deposited by RF co‐sputtering method

CuSn thin films were deposited by the radio‐frequency (RF) magnetron co‐sputtering method on Si(100) with Cu and Sn metal targets with various RF powers. The thickness of the films was fixed at 200 ± 10 nm. The synthesized CuSn thin films mainly consisted of Cu₂₀Sn₆ and Cu₃₉Sn₁₁ phases, which was revealed by an X‐ray diffraction (XRD) study. The high‐resolution Cu 2p XPS and Cu LMM Auger electron spectra indicate that metallic Cu oxidized to Cu⁺ and Cu²⁺ as the RF power on Cu target increased. The atomic ratios of Sn⁰ and Sn⁴⁺ decreased, while that of Sn²⁺ increased with increasing RF power on the Cu target. The polar surface free energy (SFE) component has a different tendency in comparison with the total SFE and the dispersive SFE component. The dispersive SFE component was the dominating contributing factor to the total SFE compared with the polar SFE. Copyright © 2016 John Wiley & Sons, Ltd.     

Synthesis and characterization of Ti and N binary‐doped ɑ‐C films deposited by pulse cathode arc with ionic source assistant

Using ionic source assistant, Ti and N co‐doped amorphous C (α‐C:N:Ti) thin films were prepared by pulse cathode arc technique. Microstructure, composition, elemental distribution, morphology, and mechanical properties of α‐C:N:Ti films were investigated in dependence of nitrogen source, pulse frequency, and target current by Raman spectroscopy, X‐ray diffraction, scanning electron microscopy, X‐ray photoelectron spectroscopy, atomic force microscopy, nanoindentation, and surface profilometer. The results show the presence of titanium carbide and nitride in a‐C:N:Ti films. The α‐C:N⁺:Ti film (6 Hz, 60 A) shows the smaller size and the higher disordering degree of Csp² clusters. The α‐C:N⁺:Ti films present smoother surface and smaller particle size than for α‐C:N₂:Ti films. N ions facilitate the formation of N‐sp³C bonds in the α‐C:N⁺:Ti films, and α‐C:N⁺:Ti (10 Hz, 80 A) film possesses the more graphite‐like N bonds. Higher hardness and lower residual stress present in the α‐C:N₂:Ti (10 Hz, 80 A) film.     

Influence of metal electrodes on c‐axis orientation of AlN thin films deposited by DC magnetron sputtering

Nanocrystalline aluminum nitride (AlN) thin films were deposited on two types of metallic seed layers on silicon substrates, (111) textured Pt and (110) Mo, by reactive DC magnetron sputtering at low temperature (200 °C). Both textured films of Pt and Mo promote nucleation, thereby improving the crystallinity and epitaxial growth condition for AlN thin films. The deposited films were examined by X‐ray diffraction, scanning electron microscopy and atomic force microscopy techniques. The results indicated that the preferred orientation of crystallites greatly depends upon the kinetic energy of the sputtered species (target power) and seed layers used. Furthermore, AlN thin films with c‐axis perpendicular to the substrate grew on both types of metal electrodes at all power levels larger than 100 W. By comparing the structural properties and compressive stresses at perfect c‐axis orientation conditions, it is evident that AlN films deposited on (110) oriented Mo substrates exhibited superior properties as compared with Pt/Ti seed layers. Furthermore, less values of compressive stresses (?3 GPa) as compared with Pt/Ti substrates (?7.08 GPa) make Mo preferentially better candidate to be employed in the field of suspended Micro/Nano ‐ electromechanical systems (MEMS/NEMS) for piezoelectric devices. Copyright © 2017 John Wiley & Sons, Ltd.     

Effects of substrate temperature on properties of ITO-ZnO composition spread films fabricated by combinatorial RF magnetron sputtering

We have fabricated ITO-ZnO composition spread films to investigate the effects of substrate temperature on their electrical and optical properties by using combinatorial RF magnetron sputtering. It turned out by X-ray measurement that the film with zinc contents above 16.0 at% [Zn/(In+Zn+Sn)] showed amorphous phase regardless of substrate temperature. The amorphous ITO-ZnO film had lower resistivity than polycrystalline films. When the films were deposited at 250 °C, the minimum resistivity of 3.0×10⁻⁴ Ω cm was obtained with the zinc contents of 16.0 at%. The indium content could be reduced as high as ~30 at% compared to that of ITO for the films having similar resistivity (~10⁻⁴ Ω cm). However, a drastic increase of resistivity was observed for the ITO-ZnO films deposited at 350 °C, having zinc contents below 15.2 at%.     

Effect of Power Density on the Electrochemical Properties of Undoped Amorphous Carbon (a‐C) Thin Films

Undoped a‐C thin films were deposited with varying power density from 10 to 25 W/cm² using unbalanced closed‐field magnetron sputtering (CFUBMS). The effect of power density on the physical and electrochemical properties was investigated by experimental characterization methods and atomistic simulations. XPS indicated that the films were composed mostly of sp²‐bonded carbon (55–58 at.%) with a small amount of oxygen (8–9 at.%) in the surface region. The films appeared completely amorphous in XRD. The I_D/I_G ratio obtained by Raman spectroscopy indicated an increase from 1.76 to 2.34 with power density. The experimental and simulated data suggested a possible ordering and/or clustering of the sp² phase with power density as the cause of the improved electrical properties of the a‐C films. The electrochemical properties of a‐C were between those of glassy carbon and tetrahedral amorphous carbon with potential windows ranging from 2.77 to 2.93 V and double‐layer capacitance values around 0.90 μF cm^?2. Electron transfer for Ru(NH₃)₆^3+/2+ and FcMeOH^+1/0 was reversible whereas that for IrCl₆^2?/3? was quasi‐reversible. Peak potential separation of dopamine and oxidation potential of ascorbic acid decreased with power density, correlating with the structural and electrical changes of the films. The a‐C thin films deposited by CFUBMS are inherently conductive and their physical properties can be adjusted by varying the deposition parameters to a wide range of electrochemical applications.     

Preparation and properties of polysilsesquioxanes: Polysilsesquioxanes and flexible thin films by acid‐catalyzed controlled hydrolytic polycondensation of methyl‐ and vinyltrimethoxysilane

Polymethylsilsesquioxane (PMS) and polyvinylsilsesquioxane (PVS) were prepared by acid‐catalyzed controlled hydrolytic polycondensation of methyl‐ and vinyltrimethoxysilane (MTS and VTS), respectively. The spinnabilities and molecular weights of polysilsesquioxanes were easily controlled by the reaction conditions, such as the molar ratios of water, hydrochloric acid, and methanol to MTS or VTS; nitrogen flow rate; temperature; and stirring rate. PMS and PVS showed spinnability of more than 200 cm when their molecular weights were up to 42,000 (PMS) and 19,000 (PVS) M_w. Transparent, colorless, and flexible films of 0.02–0.10 mm thick were prepared by casting a 20 wt % acetone–methanol (V/V = 1) solution of PMS and PVS on a polymethylpentene shale, followed by heating at 80°C for 3 weeks. The tensile strength of the films, approximately 26 (PMS) and 17 (PVS) MPa, was found to be correlated with the structure of the polysilsesquioxanes. The surface contact angle and electroconductivity of films were also measured. © 1999 John Wiley & Sons, Inc. J Polym Sci A: Polym Chem 37: 1017–1026, 1999     

Enhanced electrical properties of highly oriented poly(vinylidene fluoride) films prepared by solid‐state coextrusion

Oriented poly(vinylidene fluoride) (PVDF) films with β‐form crystals have been commonly prepared by cold drawing of a melt‐quenched film consisting of α‐form crystals. In this study, we have successfully produced highly oriented PVDF thin films (20 µm thick) with β‐crystals and a high crystallinity (55–76%), by solid‐state coextrusion of a gel film to eight times the original length at an established optimum extrusion temperature of 160°C, some 10°C below the melting temperature. The resultant drawn films had a highly oriented (orientation function f_c = 0.993) fibrous structure, showing high mechanical properties of an extensional elastic modulus of 8.3 GPa and tensile strength of 0.84 GPa, along the draw direction. Such highly oriented and crystalline films exhibited excellent ferroelectric and piezoelectric properties. The square hysteresis loop was significantly sharper than that of a conventional sample. The sharp switching transient yielded the remnant polarization P_r of 90 mC/m², and the electromechanical coupling factor k_t was 0.24 at room temperature. These values are about 1.5 times greater than those of a conventional β‐PVDF film. Thus, solid‐state coextrusion near the melting point was found to be a useful technique for the preparation of highly oriented and highly crystalline β‐PVDF films with superior mechanical and electrical properties. The morphology of the extrudate relevant to such properties is discussed. © 1999 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 37: 2549–2556, 1999