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1.
Silicon oxynitride has been used as a shallow gate oxide material for microelectronics and its thickness has been reduced over the years to only a few tens of angstroms due to device size scaling. The nitride distribution and density characteristic in the gate oxide thus becomes imperative for the devices. The shallow depth profiling capability using time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS) has huge potential for the nitrogen characterization of the shallow gate oxide film. In this article, both positive and negative spectra of TOF‐SIMS on silicon oxynitride have been extensively studied and it was found that the silicon nitride clusters SixN? (x = 1–4) are able to represent the nitrogen profiles because their ion yields are high enough, especially for the low‐level nitride doping in the oxide, which is formed by the annealing of nitric oxide on SiO2/Si. The gate oxide thickness measured by the TOF‐SIMS profiling method using 18O or CsO profile calibration was found to correlate very well with transmission electron microscope measurement. The nitrogen concentration in the gate oxide measured using the TOF‐SIMS method was consistent with the results obtained using the dynamic SIMS method, which is currently applied to relatively thicker oxynitride films. Copyright © 2012 John Wiley & Sons, Ltd.  相似文献   

2.
Gehlenite, Ca2Al[AlSiO7], has melilite‐type structure with space group . It contains two topologically distinct positions coordinated tetrahedrally by oxygen. One is completely occupied by Al3+, whereas the other one contains Al3+ and Si4+. Normally, the Al3+ molar fraction in the second tetrahedrally coordinated position does not exceed xAl = 0.5, i.e. the so‐called Loewenstein‐rule is obeyed. In this contribution the structural variations in the melilite‐type compounds of the compositions LaxCa2?xAl[Al1+xSi1?xO7], EuxCa2?xAl[Al1+xSi1?xO7] and ErxCa2?xAl[Al1+xSi1?xO7] are discussed. All members of the solid solution except the end‐members violate Loewenstein's rule. Rietveld refinements against X‐ray powder diffraction patterns confirm that the compounds have space group , without changes in the Wyckoff‐positions of the ions compared to gehlenite.  相似文献   

3.
The new oxonitridosilicates Ba4?xCaxSi6N10O have been synthesized by means of high‐temperature synthesis in a radio‐frequency furnace, starting from calcium, barium, silicon diimide and amorphous silicon dioxide. The maximum reaction temperature was at about 1450 °C. The solid solution series Ba4?xCaxSi6N10O with a phase width 1.81 ≤ x ≤ 2.95 was obtained. The crystal structure of Ba1.8Ca2.2Si6N10O was determined by X‐ray single‐crystal structure determination (P213, no. 198), a = 1040.2(1) pm, Z = 4, wR2 = 0.082). It can be described as a highly condensed network of corner‐sharing SiN4 and SiON3 tetrahedra, the voids of which are occupied by the alkaline earth ions. The structure is isotypic with that of BaEu(Ba0.5Eu0.5)YbSi6N11. In the 29Si solid‐state MAS‐NMR spectrum two isotropic resonances at ?50.0 and ?53.6 ppm were observed.  相似文献   

4.
Synthesis, Crystal Structure and Solid‐State NMR Spectroscopic Investigation of the Oxonitridosilicate BaSi6N8O The phase‐pure oxonitridosilicate BaSi6N8O has been synthesized starting from BaCO3 and silicon diimide Si(NH)2 in a radiofrequency furnace at temperatures below 1630 °C as a coarsely crystalline colorless material. The structure has been determined by single‐crystal X‐ray diffraction analysis (BaSi6N8O, space group Imm2 (no. 44), a = 810.5(2), b = 967.8(2), c = 483.7(1) pm, V = 379.4(2)·106 pm3, Z = 2, R1 = 0.014, 618 independent reflections, 44 parameters). The oxonitridosilicate comprises a three‐dimensional network structure of corner sharing SiN4 and SiON3 tetrahedra with Ba2+ located in the resulting voids. BaSi6N8O is isostructural with the oxonitridoalumosilicate (sialon) Sr2AlxSi12?xN16?xO2+x (x ≈ 2) that previously has been described in the literature. Furthermore, the anionic network of BaSi6N8O derives from that of the homeotypic reduced nitridosilicate SrSi6N8 by a topotactic insertion of oxygen into the Si–Si single bonds. In the 29Si MAS‐NMR spectrum two sharp isotropic signals have been observed at ?54.0 and ?56.3 ppm, respectively. With respect to their observed intensity ratio of 1 : 2.1(1) these two signals have to be attributed to the central atoms of SiON3 and SiN4 tetrahedra, respectively, which is in accordance with the X‐ray crystal structure determination (Si at Wyckoff positions 4d (SiON3) and 8e (SiN4)).  相似文献   

5.
The oxonitridoaluminosilicate chloride Pr10[Si10?xAlxO9+xN17?x]Cl was obtained by the reaction of praseodymium metal, the respective chloride, AlN and Al(OH)3 with “Si(NH)2” in a radiofrequency furnace at temperatures around 1900 °C. The crystal structure was determined by single‐crystal X‐ray diffraction (Pbam, no. 55, Z = 2,a = 10.5973(8) Å, b = 11.1687(6) Å, c = 11.6179(7) Å, R1 = 0.0337). The sialon crystallizes isotypically to the oxonitridosilicate halides Ce10[Si10O9N17]Br, Nd10[Si10O9N17]Br and Nd10[Si10O9N17]Cl, which represent a new layered structure type. The structure refinement was performed utilizing an O/N‐distribution model according to Paulings rules, i.e. nitrogen was positioned on all bridging sites and mixed O/Noccupation was assumed on the terminal sites resulting in charge neutrality of the compounds. The Si and Al atoms were refined equally distributed on their three crystallographic sites, due to their poor distinguishability by X‐ray analysis. The tetrahedra layers of the structure consist of condensed [(Si,Al)N2(O,N)2] and [(Si,Al)N3(O,N)] tetrahedra of Q2 and Q3 type. The chemical composition of the compound was derived from electron probe micro analyses (EPMA).  相似文献   

6.
The effect of the composition ratio between arsenic and silicon atoms on the structures and properties of AsxSi6?x (x = 0–6) have been systematically investigated using the density functional theory at the B3LYP/6‐311+G* level. The AsxSi6?x clusters prefer substitutional rather than attaching structures; the Si‐rich clusters favor Si6‐like structures, whereas the As‐rich clusters prefer As6‐like structures. The As atoms locating at the framework may explain the difficulty of removal of arsenic impurities from polycrystalline silicon. In general, the average binding energies gradually decrease, implying the AsxSi6?x clusters become increasingly unstable as x increases. Both the HOMO‐LUMO gaps and the As‐dissociation energies present a strong even–odd alternation, implying alternating chemical stability, with the even x members being more stable than the odd ones. The dissociation energies of an As atom from AsxSi6?x are: 3.07, 2.84, 1.84, 2.52, 1.86, and 2.85 eV, for x = 1–6, respectively, and 3.80, 3.08, 2.64, 3.01, 2.93, 3.16 eV for Si (x = 0–5). These dissociation energy results should provide a useful reference for further experimental investigations. © 2011 Wiley Periodicals, Inc. Int J Quantum Chem, 2012  相似文献   

7.
The oxonitridoalumosilicates (so‐called sialons) MLn[Si4?xAlxOxN7?x] with M = Eu, Sr, Ba and Ln =Ho, Er, Tm, Yb were obtained by the reaction of the respective lanthanoid metal, the alkaline earth carbonates or europium carbonate, resp., AlN, “Si(NH)2” and MCl2 as a flux in a radiofrequency furnace at temperatures around 2100 °C. The compounds MLn[Si4?xAlxOxN7?x] are relevant for the investigation of substitutional effects on the materials properties due to their ability of tolerating a comparatively large phase width up to x ≈ 2.0(5). The crystal structures of the twelve compounds were refined from X‐ray single crystal data and X‐ray powder data and are found to be isotypic to the MYb[Si4N7] structure type. The compounds crystallize in space group P63mc (no. 186, hexagonal) and are made up of chains of so‐called starlike units [N[4](SiN3)4] or [N[4]((Si,Al)(O,N)3)4], respectively. These units are formed by four (Si,Al)(N/O)4 tetrahedra sharing a common central nitrogen atom. The structure refinement was performed utilizing an O/N‐distribution model according to Paulings rules, i.e. nitrogen was positioned on the four‐fold bridging site and nitrogen and oxygen were distributed equally on both of the two‐fold bridging sites, resulting in charge neutrality of the compound. The Si and Al atoms were distributed equally on their two crystallographic sites, referring to their elemental proportion in the compound, due to being poorly distinguishable by X‐ray methods. The chemical compositions of the compounds were derived from electron probe micro analyses (EPMA).  相似文献   

8.
Cage‐type siloxanes have attracted increasing attention as building blocks for silica‐based nanomaterials as their corners can be modified with various functional groups. Cubic octasiloxanes incorporating both Si?H and Si?OtBu groups [(tBuO)nH8?nSi8O12; n=1, 2 or 7] have been synthesized by the reaction of octa(hydridosilsesquioxane) (H8Si8O12) and tert‐butyl alcohol in the presence of a Et2NOH catalyst. The Si?H and Si?OtBu groups are useful for site‐selective formation of Si?O?Si linkages without cage structure deterioration. The Si?H group can be selectively hydrolyzed to form a Si?OH group in the presence of Et2NOH, enabling the formation of the monosilanol compound (tBuO)7(HO)Si8O12. The Si?OH group can be used for either intermolecular condensation to form a dimeric cage compound or silylation to introduce new reaction sites. Additionally, the alkoxy groups of (tBuO)7HSi8O12 can be treated with organochlorosilanes in the presence of a BiCl3 catalyst to form Si?O?Si linkages, while the Si?H group remains intact. These results indicate that such bifunctional cage siloxanes allow for stepwise Si?O?Si bond formation to design new siloxane‐based nanomaterials.  相似文献   

9.
A series of the solid‐solution phosphors Lu3?x?yMnxAl5?xSixO12:yCe3+ is synthesized by solid‐state reaction. The obtained phosphors possess the garnet structure and exhibit similar excitation properties as the phosphor Lu3Al5O12:Ce3+, but with an effectively improved red component in the emission spectrum. This can be attributed to the energy transfer from Ce3+ to Mn2+. Our investigation reveals that electric dipole–quadrupole interactions dominate the energy‐transfer mechanism and that the critical distance determined by the spectral overlap method is about 9.21 Å. The color‐tunable emissions of the Lu3?x?yMnxAl5?xSixO12:yCe3+ phosphor as a function of Mn3Al2Si3O12 content are realized by continuously shifting the chromaticity coordinates from (0.354, 0.570) to (0.462, 0.494). They indicate that the obtained material may have potential application as a blue radiation‐converting phosphor for white LEDs with high‐quality white light.  相似文献   

10.
On the H‐ and A‐Type Structure of La2[Si2O7] By thermal decomposition of La3F3[Si3O9] at 700 °C in a CsCl flux single crystals of a new form of La2[Si2O7] have been found which is called H type (triclinic, P1; a = 681.13(4), b = 686.64(4), c = 1250.23(8) pm, α = 82.529(7), β = 88.027(6), γ = 88.959(6)°; Vm = 87.223(9) cm3/mol, Dx = 5.113(8) g/cm3, Z = 4) continuing Felsche's nomenclature. It crystallizes isotypically to the triclinic K2[Cr2O7] in a structure closely related to that of A–La2[Si2O7] (tetragonal, P41; a = 683.83(7), c = 2473.6(4) pm; Vm = 87.072(9) cm3/mol, Dx = 5.122(8) g/cm3, Z = 8). For comparison, the latter has been refined from single crystal data, too. Both the structures can be described as sequence of layers of each of two crystallographically different [Si2O7]6– anions always built up of two corner‐linked [SiO4] tetrahedra in eclipsed conformation with non‐linear Si–O–Si bridges (∢(Si–O–Si) = 128–132°) piled up in [001] direction and aligned almost parallel to the c axis. They differ only in layer sequence: Whereas the double tetrahedra of the disilicate units are tilted alternating to the left and in view direction ([010]; stacking sequence: AB) in H–La2[Si2O7], after layer B there follow due to the 41 screw axis layers with anions tilted to the right and tilted against view direction ([010]; stacking sequence: ABA′B′) in A–La2[Si2O7]. The extremely irregular coordination polyhedra around each of the four crystallographically independent La3+ cations in both forms (H and A type) consist of eight to ten oxygen atoms in spacing intervals of 239 to 330 pm. The possibility of more or less ordered intermediate forms will be discussed.  相似文献   

11.
The chemistry and thermal stability of HfTaO/Si interface as a function of annealing temperature have been investigated by x‐ray photoelectron spectroscopy. For the as‐deposited sample, the formation of Hf‐silicate bond is observed on Hf 4f core‐level spectra, which contributes to bulk HfO2 and SiO2. Besides, the suboxide of tantalum (Ta+1) is formed at the interface at room temperature because of oxygen‐deficient conditions. HfSi2, HfxSiyO4, and HfO2 coexists in interfacial region at 850 °C, meanwhile, an evidence for transforming from the Ta1+ to tantalum oxide (Ta5+) is verified. The peaks of Hf–O–Si and Hf–O have disappeared, only one peak of Hf silicide remained after the annealing at 950 °C. A stable SiO2 phase in HfTaO/Si is formed under different annealing conditions. Copyright © 2011 John Wiley & Sons, Ltd.  相似文献   

12.
A Monte Carlo code, previously set up to simulate electron energy loss spectra of carbon films on silicon at 100 kV, has been extended to the analysis, at 300 kV, of a Si/SiO2/Si structure; the final goal is the determination of the oxygen concentration in SiOx precipitates embedded in a Si matrix. The upgrading of the programme has required the introduction of relativistic kinematics and relativistic corrections to elastic and inelastic cross sections.The Si/SiO2/Si samples have been prepared by CVD deposition of a 16 nm thick silicon film onto a silicon wafer covered with a 11 nm thick thermal oxide. The thickness of both films has been checked by transmission electron microscopy on cross sections. The EELS experiments have been performed on planar sections, in regions of different thickness; the EELS spectra have been acquired with a parallel 666 Gatan spectrometer, fitted to a Philips CM 30 TEM/STEM, operating at 300 kV. The stoichiometry of the SiOx can be obtained by the ratioing of the areas under the OK and SiK edges, taking advantage of the possibility given by the Monte Carlo simulation to separate the background electrons from the one suffering the characteristic energy loss. The agreement between experiments and calculations in the case examined is satisfactory, so that the application of this procedure to SiOx precipitates is promising.  相似文献   

13.
Fluorooxoborates, benefiting from the large optical band gap, high anisotropy, and ever‐greater possibility to form non‐centrosymmetric structures activated by the large polarization of [BOxF4?x](x+1)? building blocks, have been considered as the new fertile fields for searching the ultraviolet (UV) and deep‐UV nonlinear optical (NLO) materials. Herein, we report the first asymmetric alkaline‐earth metal fluorooxoborate SrB5O7F3, which is rationally designed by taking the classic Sr2Be2B2O7 (SBBO) as a maternal structure. Its [B5O9F3]6? fundamental building block with near‐planar configuration composed by two edge‐sharing [B3O6F2]5? rings in SrB5O7F3 has not been reported in any other borates. Solid state 19F and 11B magic‐angle spinning NMR spectroscopy verifies the presence of covalent B?F bonds in SrB5O7F3. Property characterizations reveal that SrB5O7F3 possesses the optical properties required for deep‐UV NLO applications, which make SrB5O7F3 a promising crystal that could produce deep‐UV coherent light by the direct SHG process.  相似文献   

14.
Vacancy‐rich layered materials with good electron‐transfer property are of great interest. Herein, a full‐spectrum responsive vacancy‐rich monolayer BiO2?x has been synthesized. The increased density of states at the conduction band (CB) minimum in the monolayer BiO2?x is responsible for the enhanced photon response and photo‐absorption, which were confirmed by UV/Vis‐NIR diffuse reflectance spectra (DRS) and photocurrent measurements. Compared to bulk BiO2?x, monolayer BiO2?x has exhibited enhanced photocatalytic performance for rhodamine B and phenol removal under UV, visible, and near‐infrared light (NIR) irradiation, which can be attributed to the vacancy VBi‐O′′′ as confirmed by the positron annihilation spectra. The presence of VBi‐O′′′ defects in monolayer BiO2?x promoted the separation of electrons and holes. This finding provides an atomic level understanding for developing highly efficient UV, visible, and NIR light responsive photocatalysts.  相似文献   

15.
The isotypic nitridosilicates MYb[Si4N7] (M = Sr, Ba, Eu) were obtained by the reaction of the respective metals with Si(NH)2 in a radiofrequency furnace below 1600 °C. On the basis of powder diffraction data of MYb[Si4N7] Rietveld refinements of the lattice constants were performed; these confirmed the previously published single‐crystal data. The compounds contain a condensed network of corner‐sharing [N(SiN3)4] units. The central nitrogen thus exhibits ammonium character. Magnetic susceptibility measurements of MYb[Si4N7] (M = Sr, Ba, Eu) show paramagnetic behavior with experimental magnetic moments of 3.03(2), (Sr), 2.73(2) (Ba), and 9.17(2) (Eu) μB per formula unit. In EuYbSi4N7 the europium and ytterbium atoms are in stable divalent and trivalent states, respectively. According to the non‐magnetic character of the alkaline earth cations, ytterbium has to be in an intermediate valence state YbIII‐x in the strontium and barium compound. Consequently, either a partial exchange N3—/O2— resulting in compositions MYbIII‐x[Si4N7—xOx] or an introduction of anion defects according to MYbIII‐x[Si4N7—x/3x/3] has to be assumed. The phase width 0 ≤ x ≤ 0.4 was estimated according to the magnetic measurements. 151Eu Mössbauer spectra of EuYb[Si4N7] at 78 K show a single signal at an isomer shift of δ = —12.83(3) mm s—1 subject to quadrupole splitting of ΔEQ = 5.7(8) mm s—1, compatible with purely divalent europium.  相似文献   

16.
A powder X-ray diffraction experiment was performed on cubic Zr1-xHfxW2O8 (x=0.25, 0.50 and 0.75) solid solutions from 90 to 560 K. The lattice parameters of Zr1-xHfxW2O8 at 121 K decreased linearly with increasing Hf contents, due to smaller ionic radius of hafnium than that of zirconium. Transition temperatures due to α-β structural phase transition increased with increasing Hf contents, reflecting the decrease of lattice free volume related to the orientation of unshared vertex of WO4. Anomaly in the heat capacity of Zr0.5Hf0.5W2O8 was observed around 450 K which was 9 K lower than that by X-ray diffraction method. Transition entropy of Zr0.5Hf0.5W2O8 was 2.1 J mol-1 K-1, consistent with those of ZrW2O8 and HfW2O8. This consistent entropy supports that Zr1-xHfxW2O8 (x=0-1.0) has the same order-disorder phase transition mechanism. This revised version was published online in August 2006 with corrections to the Cover Date.  相似文献   

17.
The thermal reduction of N2O by CO mediated by the metal‐free cluster cations [Si2Ox].+ (x =2–5) has been examined in the gas phase using Fourier transform ion cyclotron resonance (FT‐ICR) mass spectrometry in conjunction with quantum chemical calculations. Three successive oxidation/reduction steps occur starting from [Si2O2].+ and N2O to form eventually [Si2O5].+; the latter as well as the intermediate oxide cluster ions react sequentially with CO molecules to regenerate [Si2O2].+. Thus, full catalytic cycles occur at ambient conditions in the gas phase. Mechanistic aspects of these sequential redox processes have been addressed to reveal the electronic origins of these unparalleled reactions.  相似文献   

18.
A highly stable 75 wt % BiOClxBr1?x‐loaded alumina composite film has been developed for the fabrication of glass‐based photoreactors. A very simple approach has been adopted that does not involve the use of a special instrument and can be applied to all types of substrates irrespective to their size and shape. The structure and morphology of the films were well characterized by XRD, SEM, TEM, N2‐sorption, IR, Raman, and UV/Vis diffuse reflectance spectroscopy. BiOClxBr1?x microspheres (1–3 μm) with closely packed thin nanoplates (width ≈10 nm) were integrated within alumina to develop a hybrid film. The photocatalytic capacity of the films was evaluated for the decomposition of Rhodamine B (RhB) and naphthalene under visible‐light irradiation. The composite films showed a remarkable photocatalytic activity and stability and have been reused for several cycles without any deterioration of their original activity.  相似文献   

19.
Incorporation of SiIV into an expanded porphyrin has been achieved for the first time. Treatment of [28]hexaphyrin 1 with CH3SiCl3 and N,N‐diisopropylethylamine gave SiIV complex 2 and its N‐fused product 4 that both have Möbius aromatic nature. In both complexes, the coordinated Si atom is satisfied in a typical trigonal bipyramidal coordination. SiIV incorporation induces conformational rigidification and redshifted absorption profiles due to σ–π conjugation between the Si atom and hexaphyrin macrocycle. Tamao–Fleming oxidation of 2 with H2O2 gave β‐hydroxy [28]hexaphyrin 5 , which exists as a ruffled rectangular shape in the solid state, yet it has been revealed to exist predominantly as a twisted Möbius aromatic conformer in CH2Cl2.  相似文献   

20.
Advancing the attainable composition space of a compound class can lead to fascinating materials. The first tetravalent metal nitridophosphate, namely Hf9?xP24N52?4xO4x (x≈1.84), was prepared by high‐pressure metathesis. The Group 4 nitridophosphates are now an accessible class of compounds. The high‐pressure metathesis reaction using a multianvil setup yielded single crystals that were suitable for structure analysis. Magnetic properties of the compound indicate Hf in oxidation state +IV. Optical measurements show a band gap in the UV region. The presented route unlocks the new class of Group 4 nitridophosphates by significantly improving the understanding of this nitride chemistry. Hf9?xP24N52?4xO4x (x≈1.84) is a model system and its preparation is the first step towards a systematic exploration of the transition‐metal nitridophosphates.  相似文献   

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