High-Temperature Dielectric Response and Multiscale Mechanism of SiO2/Si3N4 Nanocomposites

The high-temperature dielectric properties of SiO₂/Si₃N₄ nanocomposites are investigated theoretically and experimentally. Its permittivities and loss tangents at the temperature ranging from room temperature to 1300°C at 9.0GHz are measured by the resonant cavity method. The SiO_2/Si₃N₄ nanocomposites show complex dielectric behaviour at elevated temperature, and a multi-scale model is proposed to describe the dependence of the dielectric properties in the SiO₂/Si₃N₄ on its compositional variations. Such a theory is needed so that the available property measurements could be extrapolated to other operating frequencies and temperatures.     

Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films Crystallized inDifferent N2/O2 Ambients

Bi3.25La0.75 Ti3O12 （BLT） ferroelectric thin films are deposited by sol-gel method and annealed for crystallizaion in total l eccm N2/02 mixed gas with various ratio at 750℃ for 30rain. The effect of crystallization ambient on the structural and ferroelectric properties of the BLT films is studied. The growth direction and grain size of BLT film are revealed to affect ferroeleetric properties. Alter the BLT film is annealed in 20%O2, the largest P~ value is obtained, which is ascribed to an increase of random orientation and large grain size. The fatigue property is improved with the concentration of oxygen in the ambient increasing, which is ascribed to annealing in the ambient with high concentrated oxygen adequately decreasing the defects related to lack of oxygen.     

Polarized Micro-Raman Study of the Temperature-Induced Phase Transition In 0.67 Pb（Mg1/3Nb2/3）O3-0.33PbTiO3

Polarized Raman spectra of ferroelectric relaxor 0.67Pb（Mg1/3Nb2/3）O3-0.33PbTiO3 （0.67PMN-0.33PT） single crystal are systematically investigated in a wide temperature range from -196 to 600℃ by micro-Raman scattering technique. The results clearly reveal that there are two structural phase transitions in such composite ferroelectric relaxor： the rhombohedral-tetragonal （R- T） phase transition and the tetragonal-cubic （T- C） phase transition. The former occurs at about TR-T =34℃, corresponding to the vanishing of the soft A1 mode at 106cm^-1 recorded in the parallel polarization. The latter appears at about TT-C = 144℃, which can be verified with the vanishing of mode at 780cm^-1 measured in the crossed polarization.     

（Na0.52K0.44Li0.04）Nb0.9-xSbxTa0.1O3 Lead-Free Piezoelectric Ceramics with High Performance and High Curie Temperature

（Na0.52K0.44Li0.04）Nb0.9-x Sbx Ta0.1O3 lead-free piezoelectric ceramics are prepared by a solid-state reaction method. With increasing Sb content, the transition temperature from orthorhombic to tetragonal polymorphic phase decreased. A composition （Na0.52K0.44Li0.04）Nb0.863Sb0.037Ta0.1O3 is found to possess excellent piezo- electric and electromechanical performances （d33 = 306pC/N, kp =48%, and kt=50%）, and high Curie temperature （Tc = 320 ℃）. These results indicate that （Na0.52K0.44Li0.04）Nb0.863Sb0.037 Ta0.1O3 is a promising lead-free piezoceramics replacement for lead zirconate titanate.     

Magnetic Behaviour of Sm2Co7/Fe/Sm2 Co7, Nanocomposite Trilayers with Cr and Ti Additions

Trilayered Sm2Co7/Fe/Sm2Co7 spring exchange magnets are fabricated by dc magnetron sputtering on MgO substrates. Very thin layers （0.3-0.7 nm） of Cr and Ti are added at the interfaces of the two magnetic phases. The thickness of StucCo7 is kept at 20nm and Fe at 6nm while the thickness of Cr and Ti are varied as 0.3, 0.5, and 0.7nm. The base pressure of sputtering chamber is kept below 10^-7 Torr and Ar pressure at 3-8m Torr. The samples are characterized by x-ray diffraction （XRD） and SQUID magnetometer. We report improvement in exchange coupling of nonacomposite magnets by addition of thin layers of Cr at interfaces.     

Effects of Li Substitution and Sintering Temperature on Properties of Bi0.5（Na,K）0.5TiO3 Lead-Free Piezoelectric Ceramics

Bi0.5 （Na0.72K0.28- x Lix ）0.5 TiO3 （BNKLT- 100x） lead-free piezoelectric ceramics are synthesized by conventional solid state sintering techniques. The dielectric and piezoelectric properties of the BNKLT-100x ceramics as a function of Li content are systematically investigated. It is found that not only Li content but also the sintering temperature has a strong effect on the piezoelectric properties of BNKLT. The piezoelectric constant d33 Of BNKLT varies from 120 to 252pC/N in the Li content range from 0.03 to 0.16. In the sintering temperature range from 1080 to 1130℃, the d33 value of BNKLT-6 changes from 200pC/N to 252pC/N. The BNKLT-6 sample sintered at 1100℃ has the highest piezoelectric constant d33 of 252pC/N, with the electromechanical coupling factors kp of 0.32 and kt of 0.44.     

Electroluminescence from Multilayered Diamond/CeF3/SiO2 Films

We report a thin film electroluminescent device with a three-layer structure （diamond/CeF3/SiO2 films）, which has a luminance of 1.5 cd/m^2 at dc voltage 215 V. The electroluminescence spectrum at room temperature shows that the main peaks locate at 527 and 593nm, which are attributed to isolated emission centers of Ce^3＋ ions.     

Structural, Elastic and Electronic Properties of ReO2

Structural, elastic and electronic properties of ReO₂ are investigated by first-principles calculations based on density functional theory. The ground stateof ReO₂ has an orthorhombic symmetry which belongs to space group Pbcn with a=4.7868Å b=5.5736Å, and c=4.5322Å. The calculated bulk moduli are 322GPa, 353GPa, and 345GPa for orthorhombic, tetragonal, and monoclinic ReO₂, respectively, indicating that ReO₂ has a strong incompressibility. ReO₂ is a metal ductile solid and presents large elastic anisotropy. The obtained Debye temperatures are 850K for orthorhombic, 785K for tetragonal, and 791K for monoclinic ReO₂.     

Memory Effect of Metal--Insulator--Silicon Capacitors with SiO2/HfO2/Al2O3 Dielectrics

Charge trapping characteristics of the metal-insulator-silicon （MIS） capacitors with Si02/HfO2//A12O3 stacked dielectrics are investigated for memory applications＇. A capacitance-voltage hysteresis memory window as large as 7.3 V is achieved for the gate voltage sweeping of ±12 V, and a fiat-band voltage shift of 1.5 V is observed in terms of programming under 5 V and I ms. Furthermore, the time- and voltage-dependent charge trapping characteristics are also demonstrated, the former is related to charge trapping saturation and the latter is ascribed to variable tunnelling barriers for electron injecting and discharging under different voltages.     

The effect of potential of impedance in the pulsed-laser-deposited SrBi2Ta2O9 thin film

Ferroelectrics SrBi₂Ta₂O₉ (SBTO) thin films were grown on a highly oriented Pt/Ti/SiO₂/Si substrates using the pulsed laser ablation. The ac impedance of SBTO thin films have been measured at room temperature both in the frequency range from 10⁻¹ to 10⁶ Hz and bias voltage range from −6 to 6 V. The ac impedance dispersion was observed at low frequency with increasing bias voltage, which was interpreted based on a blocked charge. We can explain that the blocking interface gives rise to constant phase element (CPE) response, and we give an impedance model function that can fit data along the low frequency range when such a CPE is found. The low frequency dispersion phenomena of SBTO thin film are related to a charge diffusion process at the surface of thin film.     

Mixing between the 23S1 and 13D1 Ds

Mixing between the 2³S₁ and 1³D₁ D_s is studied within the ³P₀ model. If mixing between these two 1^- states exists, D_s1^*(2700)^± and D_sJ^*(2860)^± could be interpreted as the two orthogonal mixed states with mixing angle θ≈ -80° in the case of a special β for each meson. However, in the case of a universal β for all mesons, D_s1^*(2700)^± could be interpreted as the mixed state of 2³S₁ and 1³D₁ with mixing angle 12° < θ < 21° but D_sJ^*(2860)^± seems difficult to interpret as the orthogonal partner of D_s1^*(2700)^±.     

Superconductivity in Hole-Doped （S1-xKx）Fe2As2

A series of layered （Sr1-xKx）Fe2As2 compounds with nominal x = 0-0.40 are synthesized by solid state reaction method. Similar to other parent compounds of iron-based pnictide superconductors, pure SrFe2As2 shows a strong resistivity anomaly near 210 K, which was ascribed to the spin-density-wave instability. The anomaly temperature is much higher than those observed in LaOFeAs and BaFe2As2, the two prototype parent compounds with ZrCuSiAs- and ThCr2Si2-type structures. K-doping strongly suppresses this anomaly and induces superconductivity. Like in the case of K-doped BaFe2As2, sharp superconducting transitions at Tc ～ 38 K is observed. We perform the Hall coefficient measurement, and confirm that the dominant carriers are hole-type. The carrier density is enhanced by a factor of 3 in comparison to F-doped LaOFeAs superconductor.     

Laser Molecular Beam Epitaxy of Multilayer Heterostructure SrNb0.05Ti0.95O3/La0.9Sr0.1MnO3 in 10000 Unit-Cell Layers

Ten thousands of unit-cell multilayer heterosturctures, [SrNb0.05 Ti0.95O3/La0.9 Sr0.1MnO3]3 （SNTO/LSMO）, have been epitaxial grown on SrTiO3 （001） substrates by laser molecular beam epitaxy. The monitor of insitu. reflection high-energy electron diffraction demonstrates that the heterosturctures are layer-by-layer epitaxial growth. Atomic force microscope observation indicates that the surface of the heterosturcture is atomically smooth. The measurements of cross-sectional low magnification and high-resolution transmission electron microscopy as well as the corresponding selected area electron diffraction reveal that the interfaces are of perfect orientation, and the epitaxial crystalline structure shows the orientation relation of SNTO（001）//LSMO（001）, and SNTO[100]//LSMO[100].     

Vector Coherent State Representations of SO5 SU2 SU2 U1 U1 and SO5 U1 U1

VCS representantions of SO₅ SU₂ SU₂ U₁ U₁ and SO₅ U₁ U₁ are discussed.Reduced matrix elements for SO₅ SU₂ SU₂ are derived.The multiplicity of a weight for SO₅ is determined by using the K-matrix technique.     

A Strength Softening Phase Transition Observed in Shocked （Mg0.92,Fe0.08）SiO3 Perovskite at About 83 GPa

We report the experimental data of Hugoniot longitudinal sound velocity VL for natural （Mg0.92,Fe0.08）SiO3 enstatite sample at about 40-140 GPa, consisting of three new data and five previously reported data but revised by our new Hugoniot equation of state parameters. Three segments, separated by two discontinuities, appear in the VL-PH （shock pressure） plot. Analyses show that the first discontinuity at about 64 GPa, with a sharp increase of VL of about 21%, is judged to be a phase transition from enstatite to Pbnm perovskite （PV）; while the second one at about 83 GPa, with a dramatic decrease of VL of about 23%, is likely caused by a subtle structural change from Pbnm PV to tetragonal PV, accompanied by material strength softening due to melting of oxygen sublattices. This strength softening evidence is obtained first from shock wave experiments, and probably has profound implications for probing into the origin of low seismic velocity anomaly in the Earth＇s lower mantle and thus constraining the geophysical and geochemical models for the Earth＇s lower mantle.     

Improvement in Dielectric Tunability of Ba0.6Sr0.4TiO4-Mg2TiO4 Composite Ceramics via Heterogeneous Nucleation Processing

Dielectric tunable composite ceramics Ba0.6Sr0.4 TiO4-Mg2 TiO4 （BST-MT） are prepared with a heterogeneous nucleation sol-gel approach. The Mg2 TiO4 powders are synthesized by the conventionM solid-state reaction method. The micro-sized MT powders with dispersant Ciba-4010 are introduced into Ba-Sr-Ti sol to obtain uniform and homogeneous mixture compounds with nano-sized BST particles synthesized via heterogeneous nucleation （HN） in the sol-gel process. Thus, the mierostructural and dielectric properties can be tailored. The dielectric constants of BST-MT composite ceramics can be adjusted in a larg＇e range from 294 to 1790, and the dielectric tunability can be adjusted from 29.4% to 37.0% with different MT contents from 60wt% to 20wt%. Compared to the samples prepared by the conventional solid-state （SS） process, the BST-MT composite ceramics by the heterogeneous nucleation sol-gel process exhibit a more uniform microstructure, and improve dielectric properties.     

Giant Static Dielectric Constant of Strained PbTiO3

First-principles density functional perturbation calculations are employed to study the dielectric and piezoelectric properties of strained tetragonal PbTiO3. Lattice distortion, static dielectric constant, Born effective charge, zone-centre phonons, and piezoelectric constant are obtained. For the strained tetragonal PbTiO3, we obtain a giant static dielectric constant （3600） under a strain 0. 77%. Moreover, the calculated piezoelectric constant e15 of strained PbTiO3 reaches about 203 C/m^2 which is about 20 times of that of unstrained system. The giant static dielectric constant is mainly due to the softening of the lowest-frequency phonon mode and the reduce of Ti-O bond length. This work demonstrates a route to a giant static dielectrics for electrically microwave and other devices.     

偏硼酸钡低温相晶体在高压下的电学性质与相变

 在金刚石压砧装置上，采用电容和电阻测量方法研究了偏硼酸钡低温相晶体（β-BaB₂O₄）在室温下和16 GPa内的电容、电阻与压力的关系。实验结果表明，它的电容在2.1、4.6、6.4、8、9.5、10.7 GPa左右都有一个突变。这说明β-BaB₂O₄内部的结构状态在这些压力下都发生了变化，可能发生了相变。还发现β-BaB₂O₄样品在较高压力下已发生了非晶化转变，而且是不可逆的，在卸压后被保留下来。这个非晶化转变的压力大约在11~12 GPa。     

CdGd2(WO2)4单晶的顺磁共振谱研究

通过粉末XRD测定了CdGd₂(WO₂)₄单晶的晶格常数,由σ- T和ESR实验得出晶体具有顺磁性,但又具有磁各向异性,探讨了晶体的磁各向异性与晶体结构的关系,计算了各向异性g²张量,所得结果和实验符合甚好.      

Investigation on optical transmission spectra of (1−x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 single crystals

The optical transmission spectra from 0.3 to 11 μm of relaxor ferroelectric single crystals (1−x)Pb(Mg_1/3Nb_2/3)O₃-xPbTiO₃ (PMN-xPT) were systematically studied at room temperature in this paper. The crystal is transparent between 0.45 and 5.5 μm and becomes completely absorbing around 0.4 μm in near UV region and 10 μm in infrared region. But the wavelength cutoff in near UV is much sharper than the long wavelength cutoff. As compared with other configurations, tetragonal single crystals possess the optimal transmission properties. The optical transmittance in the wavelength region from 0.45 to 5.5 μm is about 70%. The results show that tetragonal PMN-xPT single crystals are promising for a wide range of optical applications. Some discussions about the oxygen-octahedra structure that determines the basic energy level of the crystals are also presented on the optical properties of PMN-xPT single crystals.