硅基波导与GeSi／Si超晶格探测器之间光电集成器件的研制

用分子束外延法将ＧｅＳｉ／Ｓｉ超晶格结构生长在ｎ＾＋／ｎ Ｓｉ材料上，先后用反应离子刻蚀法形成探测器波志和硅脊波导，经适当工艺实现硅波导与ＰＩＮ探测器之间的光电集成，５Ｖ偏压下ＰＩＮ控制器的最小暗电流为０．８μＡ，最大光响应电流为２．７μＡ，最大总量子效率为１４％，工作波长为λ＝１．３μｍ。     

21世纪的光学和光电子学讲座 第二讲 硅基发光材料和器件研究

硅基发光材料和器件是实现光电子集成的关键．文章评述了目前取得较大进展的几种主要硅基发光材料和器件的研究,包括掺饵硅,多孔硅,纳米硅以及Ｓｉ／ＳｉＯ２ 等超晶格结构材料．展望了这些不同硅基发光材料作为发光器件和在光电集成中的发展前景     

硅基光源的研究进展

随着人们对大容量、高速和低成本的信息传播的要求越来越迫切, 近年来硅基光电子学得以蓬勃发展, 但硅基光源一直没有得到真正的解决, 成为制约硅基光电子学发展的瓶颈. 硅的间接带隙本质给高效硅基光源的实现带来很大困难, 实用化的硅基激光是半导体科学家长期奋斗的目标. 本文分别介绍了硅基发光材料、硅基发光二极管和硅基激光的研究进展, 最后总结了目前各种硅基光源面临的问题和未来的发展方向.     

光集成器件和MOEMS中硅基衍射器件的研究

介绍了光集成器件和MOEMS中硅材料和衍射光学元件的应用。在此基础上分析了硅基衍射光学元件在光集成器件和MOEMS中的重要地位;描述了几种常见形态的硅基衍射光学元件,简单分析了难于获得垂直于硅基底的衍射光学元件的原因。     

21世纪的光学和光电子讲座第二讲 硅基发光材料和器件研究

硅基发光材料和器件是实现光电子集成的关键。文章评述了目前取得较大进展的几种主要硅基发光材料和器件的研究,包括掺饵硅,多孔硅,纳米硅以及Ｓｉ／ＳｉＯ２等超晶格结构材料,展望了这些不同硅基发光材料作为发光器件和在光电集成中的发展前景。     

基于石墨烯的半导体光电器件研究进展

石墨烯自从被发现以来,由于其零带隙、低电导率、常温下的高电子迁移率及量子霍尔效应和独特的光吸收等优良特性,引发了世界各国科研人员的重视,研究人员对其物理性质及应用的研究越来越多并且进展迅速．本文以光纤通信用光电器件中的探测器、调制器为主,综述了石墨烯在光电探测器、调制器以及超快锁模激光器和用于发光二级管、触摸屏透明导电薄膜等方面的应用．     

基于发光机理提高掺铒硅基材料发光效率的几条途径

掺铒硅基发光材料可以用于制备光通信用光源、光纤放大器，更重要的是可能成为实现硅基光电子集成技术的重要途径，已成为研究的热点之一．文章讨论了掺铒硅及掺铒硅基材料的发光机理，指出了制约实用化方面存在的问题．从不同方面着重探讨了共掺氧对提高掺铒硅发光效率的作用．最后介绍了基于掺铒硅发光机理提高掺铒硅基材料发光效率的几种途径、目前存在的主要问题及研究进展．     

硅基GHz高速电光调制器研究进展

硅基高速电光调制器是新一代密集波分复用系统和光时分复用系统中的关键光电子器件，他的运用可以降低光通讯系统的制作成本并且大大有利于未来的硅基光电集成．目前国际上已经实现的硅基高速电光调制器件的调制速率已经超过6GHz．文章对国外硅基高速电光调制器的最新研究进展进行了介绍，评述了各种基于不同电学和光学结构的硅基电光调制器，对不同类型器件在制作和应用中的优缺点进行了比较．     

硅基GHz高速电光调制器研究进展

硅基高速电光调制器是新一代密集波分复用系统和光时分复用系统中的关键光电子器件,他的运用可以降低光通讯系统的制作成本并且大大有利于未来的硅基光电集成.目前国际上已经实现的硅基高速电光调制器件的调制速率已经超过6GHz.文章对国外硅基高速电光调制器的最新研究进展进行了介绍,评述了各种基于不同电学和光学结构的硅基电光调制器,对不同类型器件在制作和应用中的优缺点进行了比较.     

Three terminals optoelectronics devices integrated into a silicon on silicon waveguide

In this paper we describe two different kind of optoelectronic devices both based on a three terminals active device and exploit the plasma dispersion effect to achieve the desired working. The first device exploits this effect in order to obtain an optical modulation. The second device is an optoelectronic router based on the mode-mixing principle together with the injection-induced optical phase shift. Both devices are integrated into a Silicon on Silicon optical channel waveguide which can be realized using a standard bipolar process. The possibility of using standard, well-known technology presents several advantages with respect to III–V Optoelectronics. The active three terminal device used is a Bipolar Mode Field Effect Transistor (BMFET). Numerical simulation results are presented on both devices.     

Graphene applications in electronic and optoelectronic devices and circuits

Recent progress of research for graphene applications in electronic and optoelectronic devices is reviewed, and recent developments in circuits based on graphene devices are summarized. The bandgap-mobility tradeoff inevitably constrains the application of graphene for the conventional field-effect transistor （FET） devices in digital applications. However, this shortcoming has not dampened the enthusiasm of the research community toward graphene electronics. Aside from high mobility, graphene offers numerous other amazing electrical, optical, thermal, and mechanical properties that continually motivate innovations.     

High-speed and broad optical bandwidth silicon modulator

A high-speed silicon modulator with broad optical bandwidth is proposed based on a symmetrically configured Mach–Zehnder interferometer.Careful phase bias control and traveling-wave design are used to improve the high-speed performance.Over a broadband wavelength range,high-speed operation up to 30 Gbit/s with a 4.5 dB–5.5 dB extinction ratio is experimentally demonstrated with a low driving voltage of 3 V.     

一种光电混合集成有源光双稳器件

本文报道一种光电混合集成的有源双稳态器件,它仅由一只半导体激光器,两只PIN光电探测器及几只电子元器件构成.实验上得到了光学迟滞回线,显示了光开关、光存储、光脉冲整形等功能.文中简述了器件工作原理,光电混合集成制作工艺技术及性能指标.     

硅基III-V族量子点激光器的发展现状和前景

本文简要综述了硅基III-V族量子点激光器的研究进展. 在介绍了量子点激光器的优势和发展后, 重点介绍了近年来硅基、锗基III-V族量子点材料生长上的突破性进展及所带来的器件性能的大幅提高, 如实现了锗基和硅基1.3 μm InAs/GaAs量子点激光器的室温激射, 锗基量子点激光器的阈值电流低至55.2 A/cm²并可达60 ℃以上的连续激射, 通过锗硅虚拟衬底, 在硅基上实现了30 ℃下以16.6 mW的输出功率达到4600 h的激光寿命, 这些突破性的进展为硅基光电子集成打开了新的大门.     

基于舰载光电跟踪装备的光电助降系统技术分析

在分析国外舰载机传统光学助降系统和雷达全自动盲降系统发展现状的基础上,给出基于舰载光电跟踪技术装备的光电助降系统的组成、配置、技术原理、技术指标,对光电助降系统中光电测量坐标系到甲板坐标系进行转换,对光电助降系统的测量误差和定位误差进行建模,在舰船无摇摆以及纵摇2周期20s,横摇10周期15s条件下,结合我国现有技术基础,分析摇摆姿态角误差、距离误差、跟踪测角误差对光电助降系统定位精度的影响并进行仿真实验,给出舰载机距着舰点距离大于1 km和小于1 km时光电助降系统的定位误差。     

A simple encapsulation method for organic optoelectronic devices

The performances of organic optoelectronic devices, such as organic light emitting diodes and polymer solar cells,have rapidly improved in the past decade. The stability of an organic optoelectronic device has become a key problem for further development. In this paper, we report one simple encapsulation method for organic optoelectronic devices with a parafilm, based on ternary polymer solar cells(PSCs). The power conversion efficiencies(PCE) of PSCs with and without encapsulation decrease from 2.93% to 2.17% and from 2.87% to 1.16% after 168-hours of degradation under an ambient environment, respectively. The stability of PSCs could be enhanced by encapsulation with a parafilm. The encapsulation method is a competitive choice for organic optoelectronic devices, owing to its low cost and compatibility with flexible devices.     

Theoretical analysis of the radiation effect on the transient behavior of optoelectronic integrated devices

Theoretical analysis of the radiation effect on transient behavior of an optoelectronic integrated device composed of a heterojunction phototransistor and a light emitting diode is studied theoretically. First, the transient behavior and the rise time of this device before radiation are investigated based on the frequency response of the constituent devices and the optical feedback inside the device. Second, the effect of neutron irradiation flux on the transient behavior of this device is theoretically studied. The results show that, by increasing the optical feedback inside the device, the rise time in the amplification mode is increased along with an increasing output, while that in the switching mode can be reduced effectively, and the neutron irradiation reduces the transient response and the rise time in both the amplification and switching modes. This type of model can be exploited as optical amplifier, optical switching device, and other applications.     

Enhancement of electroluminescent properties of organic optoelectronic integrated device by doping phosphorescent dye

Organic optoelectronic integrated devices(OIDs) with ultraviolet(UV) photodetectivity and different color emitting were constructed by using a thermally activated delayed fluorescence(TADF) material 4, 5-bis(carbazol-9-yl)-1, 2-dicyanobenzene(2 CzPN) as host. The OIDs doping with typical red phosphorescent dye [tris(1-phenylisoquinoline)iridium(Ⅲ), Ir(piq)_3], orange phosphorescent dye {bis[2-(4-tertbutylphenyl)benzothiazolato-N,C~(2')]iridium(acetylacetonate),(tbt)_2 Ir(acac)}, and blue phosphorescent dye [bis(2, 4-di-fluorophenylpyridinato)-tetrakis(1-pyrazolyl)borate iridium(Ⅲ), FIr6] were investigated and compared. The(tbt)_2 Ir(acac)-doped orange device showed better performance than those of red and blue devices, which was ascribed to more effective energy transfer. Meanwhile, at a low dopant concentration of 3 wt.%, the(tbt)_2 Ir(acac)-doped OIDs showed the maximum luminance, current efficiency, power efficiency of 70786 cd/m~2, 39.55 cd/A, and 23.92 lm/W, respectively, and a decent detectivity of 1.07 × 10~(11) Jones at a bias of -2 V under the UV-350 nm illumination. This work may arouse widespread interest in constructing high efficiency and luminance OIDs based on doping phosphorescent dye.