Tailoring and investigation of surface chemical nature of virgin and ion beam modified muscovite mica

We report that the surface chemical properties of muscovite mica [KAl₂(Si₃Al)O₁₀(OH)₂] like important multi-elemental layered substrate can be precisely tailored by ion bombardment. The detailed X-ray photoelectron spectroscopic studies of a freshly cleaved as well as 12-keV Ar⁺ and N⁺ ion bombarded muscovite mica surfaces show immense changes of the surface composition due to preferential sputtering of different elements and the chemical reaction of implanted ions with the surface. We observe that the K atoms on the upper layer of mica surface are sputtered most during the N⁺ or Ar⁺ ions sputtering, and the negative aluminosilicate layer is exposed. Inactive Ar atoms are trapped, whereas chemically reactive N atoms form silicon nitride (Si₃N₄) and aluminum nitride (AlN) during implantation. On exposure to air after ion bombardment, the mica surface becomes more active to adsorb C than the virgin surface. The adsorbed C reacts with Si in the aluminosilicate layer and forms silicon carbide (SiC) for both Ar and N bombarded mica surfaces. Besides the surface chemical change, prolonged ion bombardment develops a periodic ripple like regular pattern on the surface.     

Infrared Spectrum of the Si3H8+ Cation: Evidence for a Bridged Isomer with an Asymmetric Three‐Center Two‐Electron Si?H?Si Bond

The IR spectrum of Si₃H₈⁺ ions produced in a supersonic plasma molecular beam expansion of SiH₄, He, and Ar is inferred from photodissociation of cold Si₃H₈⁺–Ar complexes. Vibrational analysis of the spectrum is consistent with a Si₃H₈⁺ structure ( 2⁺ ) obtained by a barrierless addition reaction of SiH₄ to the disilene ion (H₂Si?SiH₂⁺) in the silane plasma. In this structure, one of the electronegative H atoms of SiH₄ donates electron density into the partially filled electrophilic π orbital of the disilene cation. The resulting asymmetric Si? H? Si bridge of the 2⁺ isomer with a bond energy of approximately 60 kJ mol^?1 is characteristic for a weak three‐center two‐electron bond, which is identified by its strongly IR active asymmetric Si? H? Si stretching fundamental at about 1765 cm^?1. The observed 2⁺ isomer is calculated to be only a few kJ mol^?1 less stable than the global minimum structure of Si₃H₈⁺ ( 1⁺ ), which is derived from vertical ionization of trisilane. Although more stable, 1⁺ is not detected in the measured IR spectrum of Si₃H₈⁺–Ar, and its lower abundance in the supersonic plasma is rationalized by the production mechanism of Si₃H₈⁺ in the silane plasma, in which a high barrier between 2⁺ and 1⁺ prevents the efficient formation of 1⁺ . The potential energy surface of Si₃H₈⁺ is characterized in some detail by quantum chemical calculations. The structural, vibrational, electronic and energetic properties as well as the chemical bonding mechanism are investigated for a variety of low‐energy Si₃H₈⁺ isomers and their fragments. The weak intermolecular bonds of the Ar ligands in the Si₃H₈⁺–Ar isomers arise from dispersion and induction forces and induce only a minor perturbation of the bare Si₃H₈⁺ ions. Comparison with the potential energy surface of C₃H₈⁺ reveals the differences between the silicon and carbon species.     

A theoretical study of protonation of triatomic silicon–carbon compounds

Ab initio molecular orbital methods are employed to study the low-lying states of C₃H⁺, SiC₂H⁺, Si₂CH⁺, and Si₃H⁺. Special attention is paid to a comparative study between C₃H⁺ and Si₃H⁺. In both cases a ³B₂ state is found to lie the lowest at the HF level, although inclusion of correlation effects favor a linear structure (¹Σ⁺ state) for C₃H⁺, which lies 25 kcal/mol below the ³B₂ state at the MP 4 level, and a bent structure (¹A′ state) for Si₃H⁺, which lies just 2 kcal/mol below the ³B₂ state. The proton affinities of C₃, SiC₂, Si₂C, and Si₃ are estimated at different levels of theory. Both protonation at carbon and silicon atoms are considered for SiC₂ and Si₂C. It is found that C₃ comparatively has a low proton affinity. On the other hand, Si₃ has a relatively high proton affinity compared with the protonation at silicon atom for both SiC₂ and Si₂C. These results are discussed on the basis of electronic structure arguments.     

In situ XPS and SIMS analysis of O2+ beam‐induced silicon oxidation

The chemical composition variation of silicon under 4 keV O₂⁺ ion beam bombardment at different incident angles was studied by in situ small‐area XPS. The changes in secondary ion profile (³⁰Si⁺, ⁴⁴SiO⁺, ⁵⁶Si₂⁺, ⁶⁰SiO₂⁺) during oxygen ion beam bombardment also have been monitored. We present a direct correlation of the changes in secondary ion depth profile with surface composition during sputtering. Evolution of the secondary ion profile obtained from SIMS shows similar trends with variation of oxygen concentration in the crater surface measured by XPS. It is shown that when the oxygen ion beam incidence angle is < 40° silicon dioxide is the dominant species on the crater surface and the matrix ion species ratio (MISR) value for ⁴⁴SiO⁺/⁵⁶Si₂⁺ is higher than for ³⁰Si⁺/⁵⁶Si₂⁺. For incidence angles of >40°, the formation of sub‐oxide is favoured and thus the MISR value for ⁴⁴SiO⁺/⁵⁶Si₂⁺ is lower than for ³⁰Si⁺/⁵⁶Si₂. At 40° bombardment there are similar amounts of SiO₂ and sub‐oxides present on the crater surface and the MISR values for ⁴⁴SiO⁺/⁵⁶Si₂⁺ and ³⁰Si⁺/⁵⁶Si₂⁺ are also similar. Copyright © 2004 John Wiley & Sons, Ltd.     

The Geometric Structure of Silver‐Doped Silicon Clusters

Cationic silver‐doped silicon clusters, Si_nAg⁺ (n=6–15), are studied using infrared multiple photon dissociation in combination with density functional theory computations. Candidate structures are identified using a basin‐hopping global optimizations method. Based on the comparison of experimental and calculated IR spectra for the identified low‐energy isomers, structures are assigned. It is found that all investigated clusters have exohedral structures, that is, the Ag atom is located at the surface. This is a surprising result because many transition‐metal dopant atoms have been shown to induce the formation of endohedral silicon clusters. The silicon framework of Si_nAg⁺ (n=7–9) has a pentagonal bipyramidal building block, whereas the larger Si_nAg⁺ (n=10–12, 14, 15) clusters have trigonal prism‐based structures. On comparing the structures of Si_nAg⁺ with those of Si_nCu⁺ (for n=6–11) it is found that both Cu and Ag adsorb on a surface site of bare Si_n⁺ clusters. However, the Ag dopant atom takes a lower coordinated site and is more weakly bound to the Si_n⁺ framework than the Cu dopant atom.     

羟基化对Si3N4粉体水相分散性的影响

通过施加硝酸有效地使氮化硅（Si₃N₄）粉末的表面羟基化,以改善在水性介质中的分散性。与天然粉末相比,羟基化粉末在水性介质中产生更稳定的胶体分散。傅里叶变换红外光谱和X射线光电子能谱结果表明,随着羟基改性,Si₃N₄粉末的羟基含量显著增加。这有助于防止Si₃N₄粉末在水性介质中聚集。此外,热重分析表明羟基化Si₃N₄粉末的羟基含量比天然粉末高68.8%。Si₃N₄粉末的表面亲水性通过羟基改性而增强,并且粉末分散性随着羟基含量的增加而提高。     

Etude par spectroscopie d'emission optique de decharges radiofrequence et micro-onde lors du depot chimique en phase vapeur (PACVD) dans le systeme Si-C-H-Ar

This work highlights optical emission spectroscopy (OES) results used for a better understanding of processes occuring in radiofrequency and microwave plasma enhanced chemical vapor deposition in the Si-C-H-Ar gas system. Optical lines such as Si⁺ and H_α (λ = 634.71; 656.29 nm), C₂ (λ = 516.52 nm), CH and SiH (λ = 431.42; 412.80 nm) can be considered as tracers of chemical species in the plasmas. Process parameters (growth rate, composition, residual stresses in the films and gas temperature) have their optical signatures (respectively: Si⁺, H_α lines and rotational G¹Σ⁺g → B¹Σ⁺u structure of H₂).     

羟基化对Si3N4粉体水相分散性的影响

过施加硝酸有效地使氮化硅（Si₃N₄）粉末的表面羟基化,以改善在水性介质中的分散性。与天然粉末相比,羟基化粉末在水性介质中产生更稳定的胶体分散。傅里叶变换红外光谱和X射线光电子能谱结果表明,随着羟基改性,Si₃N₄粉末的羟基含量显著增加。这有助于防止Si₃N₄粉末在水性介质中聚集。此外,热重分析表明羟基化Si₃N₄粉末的羟基含量比天然粉末高68.8%。Si₃N₄粉末的表面亲水性通过羟基改性而增强,并且粉末分散性随着羟基含量的增加而提高。     

Silicon Nitride Capacitive Chemical Sensor for Phosphate Ion Detection Based on Copper Phthalocyanine – Acrylate‐polymer

In this work, we report the development of a highly sensitive capacitance chemical sensor based on a copper C,C,C,C‐ tetra‐carboxylic phthalocyanine‐acrylate polymer adduct (Cu(II)TCPc‐PAA) for phosphate ions detection. A capacitance silicon nitride substrate based Al−Cu/Si‐p/SiO₂/Si₃N₄ structure was used as transducer. These materials have provided good stability of electrochemical measurements. The functionalized silicon‐based transducers with a Cu(II)Pc‐PAA membrane were characterized by using Mott‐Schottky technique measurements at different frequency ranges and for different phosphate concentrations. The morphological surface of the Cu(II)Pc‐PAA modified silicon‐nitride based transducer was characterized by contact angle measurements and atomic force microscopy. The pH effect was also investigated by the Mott‐Schottcky technique for different Tris‐HCl buffer solutions. The sensitivity of silicon nitride was studied at different pH of Tris‐HCl buffer solutions. This pH test has provided a sensitivity value of 51 mV/decade. The developed chemical sensor showed a good performance for phosphate ions detection within the range of 10⁻¹⁰ to 10⁻⁵ M with a Nernstian sensitivity of 27.7 mV/decade. The limit of detection of phosphate ions was determined at 1 nM. This chemical sensor was highly specific for phosphate ions when compared to other interfering ions as chloride, sulfate, carbonate and perchlorate. The present capacitive chemical sensor is thus very promising for sensitive and rapid detection of phosphate in environmental applications.     

Bonding and singlet–triplet gap of silicon trimer: Effects of protonation and attachment of alkali metal cations

We revisit the singlet–triplet energy gap (ΔE_ST) of silicon trimer and evaluate the gaps of its derivatives by attachment of a cation (H⁺, Li⁺, Na⁺, and K⁺) using the wavefunction‐based methods including the composite G4, coupled‐cluster theory CCSD(T)/CBS, CCSDT and CCSDTQ, and CASSCF/CASPT2 (for Si₃) computations. Both ¹A₁ and ³ states of Si₃ are determined to be degenerate. An intersystem crossing between both states appears to be possible at a point having an apex bond angle of around α = 68 ± 2° which is 16 ± 4 kJ/mol above the ground state. The proton, Li⁺ and Na⁺ cations tend to favor the low‐spin state, whereas the K⁺ cation favors the high‐spin state. However, they do not modify significantly the ΔE_ST. The proton affinity of silicon trimer is determined as PA(Si₃) = 830 ± 4 kJ/mol at 298 K. The metal cation affinities are also predicted to be LiCA(Si₃) = 108 ± 8 kJ/mol, NaCA(Si₃) = 79 ± 8 kJ/mol and KCA(Si₃) = 44 ± 8 kJ/mol. The chemical bonding is probed using the electron localization function, and ring current analyses show that the singlet three‐membered ring Si₃ is, at most, nonaromatic. Attachment of the proton and Li⁺ cation renders it anti‐aromatic. © 2015 Wiley Periodicals, Inc.     

Infrared studies of silicon nitride

The FTS measurements of silicon nitride Si₃N₄ in the range 100–1400 cm⁻¹ have been made. There have been several varieties of IR spectra which can be ascribed to alpha silicon nitride. Tentative explanation of this effect suggesting a complex structure of alpha phase is proposed.     

Reactions of the Donor‐Stabilized Silylene Bis[N,N′‐diisopropyl‐benzamidinato(−)]silicon(II) with Brønsted Acids

Reaction of the donor‐stabilized silylene 1 (which is three‐coordinate in the solid state and four‐coordinate in solution) with [HMCp(CO)₃] (M=Mo, W; Cp=cyclopentadienyl) leads to the cationic five‐coordinate silicon(IV) complexes 2 and 3 , respectively, and reaction of 1 with CH₃COOH yields the neutral six‐coordinate silicon(IV) complex 4 . Compounds 2 – 4 were structurally characterized by crystal structure analyses and multinuclear NMR spectroscopic studies in the solid state and in solution. The formation of 2 – 4 can be formally described in terms of a Brønsted acid/base reaction, coupled with a redox process (Si^II→Si^IV, H⁺→H^?).     

Darstllung und Eigenschaften von Cyclopentasilan

The first known cyclosilane Si₅H₁₀ is yielded by the reaction of Si₅Br₁₀ with LiAlH₄. The cyclic Si₅Br₁₀ results at the reaction of the known Si₅ ph ₁₀ with HBr and is the first known representative of the class of cyclic silicon bromides too. Si₅H₁₀ and Si₅Br₁₀ are characterized and their properties are described. A detailed mass spectroscopic investigation shown an interesting fragmentation into Si ₅ ⁺ -particle.     

(Li6Si5)2–5: The Smallest Cluster-Assembled Materials Based on Aromatic Si56− Rings

Extensive explorations of their potential energy surfaces, combined with high-level quantum chemical computations, strikingly show that the lowest energy structures of the (Li₆Si₅)_2–5 systems consist of 2–5 Si₅⁶⁻ aromatic units, surrounded by Li⁺ counterions, respectively. These viable gas-phase compounds are the pioneering reported cases of oligomers made by planar aromatic silicon rings. Based on the key evidence that these oligomers are energetically favored, and that their silicon rings aromaticity is thoroughly preserved, the Li₆Si₅ cluster is proposed as a potential assembly unit to build silicon-lithium nanostructures, thus opening new paths to design Zintl compounds at the nanoscale level.     

Impedimetric immunosensor for human serum albumin detection on a direct aldehyde-functionalized silicon nitride surface

In this work we report the fabrication and characterization of a label-free impedimetric immunosensor based on a silicon nitride (Si₃N₄) surface for the specific detection of human serum albumin (HSA) proteins. Silicon nitride provides several advantages compared with other materials commonly used, such as gold, and in particular in solid-state physics for electronic-based biosensors. However, few Si₃N₄-based biosensors have been developed; the lack of an efficient and direct protocol for the integration of biological elements with silicon-based substrates is still one of its the main drawbacks. Here, we use a direct functionalization method for the direct covalent binding of monoclonal anti-HSA antibodies on an aldehyde-functionalized Si-p/SiO₂/Si₃N₄ structure. This methodology, in contrast with most of the protocols reported in literature, requires less chemical reagents, it is less time-consuming and it does not need any chemical activation. The detection capability of the immunosensor was tested by performing non-faradaic electrochemical impedance spectroscopy (EIS) measurements for the specific detection of HSA proteins. Protein concentrations within the linear range of 10⁻¹³–10⁻⁷ M were detected, showing a sensitivity of 0.128 Ω μM⁻¹ and a limit of detection of 10⁻¹⁴ M. The specificity of the sensor was also addressed by studying the interferences with a similar protein, bovine serum albumin. The results obtained show that the antibodies were efficiently immobilized and the proteins detected specifically, thus, establishing the basis and the potential applicability of the developed silicon nitride-based immunosensor for the detection of proteins in real and more complex samples.     

Charged Si9 Clusters in Neat Solids and the Detection of [H2Si9]2− in Solution: A Combined NMR,Raman, Mass Spectrometric,and Quantum Chemical Investigation

Polyanionic silicon clusters are provided by the Zintl phases K₄Si₄, comprising [Si₄]⁴⁻ units, and K₁₂Si₁₇, consisting of [Si₄]⁴⁻ and [Si₉]⁴⁻ clusters. A combination of solid‐state MAS‐NMR, solution NMR, and Raman spectroscopy, electrospray ionization mass spectrometry, and quantum‐chemical investigations was used to investigate four‐ and nine‐atomic silicon Zintl clusters in neat solids and solution. The results were compared to ²⁹Si isotope‐enriched samples. ²⁹Si‐MAS NMR and Raman shifts of the phase‐pure solids K₄Si₄ and K₁₂Si₁₇ were interpreted by quantum‐chemical calculations. Extraction of [Si₉]⁴⁻ clusters from K₁₂Si₁₇ with liquid ammonia/222crypt and their transfer to pyridine yields in a red solid containing Si₉ clusters. This compound was characterized by elemental and EDX analyses and ²⁹Si‐MAS NMR and Raman spectroscopy. Charged Si₉ clusters were detected by ²⁹Si NMR in solution. ²⁹Si and ¹H NMR spectra reveal the presence of the [H₂Si₉]²⁻ cluster anion in solution.     

IR Spectrum and Structure of Protonated Monosilanol: Dative Bonding between Water and the Silylium Ion

We report the spectroscopic characterization of protonated monosilanol (SiH₃OH₂⁺) isolated in the gas phase, thus providing the first experimental determination of the structure and bonding of a member of the elusive silanol family. The SiH₃OH₂⁺ ion is generated in a silane/water plasma expansion, and its structure is derived from the IR photodissociation (IRPD) spectrum of its Ar cluster measured in a tandem mass spectrometer. The chemical bonding in SiH₃OH₂⁺ is analyzed by density functional theory (DFT) calculations, providing detailed insight into the nature of the dative H₃Si⁺‐OH₂ bond. Comparison with protonated methanol illustrates the differences in bonding between carbon and silicon, which are mainly related to their different electronegativity and the different energy of the vacant valence p_z orbital of SiH₃⁺ and CH₃⁺.     

Charged Si9 Clusters in Neat Solids and the Detection of [H2Si9]2− in Solution: A Combined NMR,Raman, Mass Spectrometric,and Quantum Chemical Investigation

Polyanionic silicon clusters are provided by the Zintl phases K₄Si₄, comprising [Si₄]⁴⁻ units, and K₁₂Si₁₇, consisting of [Si₄]⁴⁻ and [Si₉]⁴⁻ clusters. A combination of solid‐state MAS‐NMR, solution NMR, and Raman spectroscopy, electrospray ionization mass spectrometry, and quantum‐chemical investigations was used to investigate four‐ and nine‐atomic silicon Zintl clusters in neat solids and solution. The results were compared to ²⁹Si isotope‐enriched samples. ²⁹Si‐MAS NMR and Raman shifts of the phase‐pure solids K₄Si₄ and K₁₂Si₁₇ were interpreted by quantum‐chemical calculations. Extraction of [Si₉]⁴⁻ clusters from K₁₂Si₁₇ with liquid ammonia/222crypt and their transfer to pyridine yields in a red solid containing Si₉ clusters. This compound was characterized by elemental and EDX analyses and ²⁹Si‐MAS NMR and Raman spectroscopy. Charged Si₉ clusters were detected by ²⁹Si NMR in solution. ²⁹Si and ¹H NMR spectra reveal the presence of the [H₂Si₉]²⁻ cluster anion in solution.     

Sliding friction and wear behaviors of plasma sprayed aluminum–bronze coating in artificial seawater

The friction and wear behaviors of plasma sprayed aluminum–bronze (CuAl) coating sliding against silicon nitride (Si₃N₄) in artificial seawater were investigated and compared with those in pure water and dry sliding. The morphologies of the worn surfaces were analyzed by three‐dimensional non‐contact surface mapping and scanning electron microscopy. Moreover, chemical states of the tribochemical products of CuAl/Si₃N₄ in seawater were characterized by X‐ray photoelectron spectroscopy. Results show that the plasma sprayed CuAl coating possessed a specific wear rate (in order of 10^?7 mm³/Nm) in seawater more than 600 times smaller than that in dry sliding due to the great alleviation in abrasion wear and splats delamination. Besides, the CuAl/Si₃N₄ had a friction coefficient of 0.06 in seawater, significantly lower and more stable than those in pure water and dry sliding. The tribochemical products of CuAl/Si₃N₄ in seawater, which were proved to be silica, alumina, and their hydrates, transformed into a loosened wear‐debris layer under the coagulation effect of the seawater and dominated the excellent lubrication state in artificial seawater. Copyright © 2014 John Wiley & Sons, Ltd.     

A Computational NICS and 13C NMR Characterization of C60−n Si n Heterofullerenes (n = 1, 2, 6, 12, 20, 24, 30)

Density functional theory (DFT) calculations are performed for a representative set of low-energy structures of C_60-n Si _n heterofullerenes (n = 1, 2, 6, 12, 20, 24, 30) to investigate the effect of silicon doping on the electron structure of fullerene. The results show that chemical shielding (CS) parameters are so sensitive to the structural distortion made by outwardly relaxing silicon doped atoms from the fullerene surface which results in puckered Si-doped rings. As a result, the chemical shifts of the nearest carbon sites of silicon atoms considerably shift to downfield. Our survey shows that those first neighbors of silicon atoms which have minor ¹³C chemical shift belong to normal (un-puckered) rings. Meanwhile, the chemical shielding anisotropy (Δσ) parameter detects the effects of dopant so that Δσ values of the carbon atoms which are contributed to the Si–C bond are mainly larger than the others. Compensation between diatropic and paratropic ring currents lead to less negative NICS values at cage centers of Si-doped fullerenes than that of C₆₀ except C₅₈Si₂-b and C₅₄Si₆-b in which more negative NICS values may be attributed to more spherical geometries of their carbon cages.