Energy resolution of CsI(Na) scintillators

The presented paper on CsI(Na) scintillators is a continuation of systematical studies of alkali halide crystals exhibiting more than one exponential decay time. The CsI(Na) crystals are known to have short (～550 ns) and long (few microseconds) components in the scintillation pulse. Previous studies showed that integration of slow components of the light pulse improved the light output, non-proportionality and energy resolution of CsI(Tl), NaI(Tl) in lower temperatures and undoped NaI crystal at liquid nitrogen temperature. In this work, an influence of the shaping time in the spectroscopy amplifier on the light output, non-proportional response to γ-rays, and energy resolution of two different size CsI(Na) scintillators is examined. Each crystal was coupled to the Photonis XP5212 PMT with a photocathode blue sensitivity of 12.2 μA/l mF. The data analysis showed improved proportionality of the crystal response, higher number of photoelectrons/MeV-γ, and consequently, a better overall energy resolution obtained for 12 μs shaping time constant. Finally, the CsI(Na) characteristics are compared to that obtained previously for NaI(Tl).     

Size-induced effect on cathode luminescence spectra of CsI(Na) and CsI(Tl) crystals

We investigated the cathode luminescence characteristics of CsI(Na)and CsI(Tl)crystals by the spectrum and structure properties at room temperature.We fabricated three different sizes of CsI(Na)and CsI(Tl)crystals and measured their luminescence spectra under cathode rays.We found that CsI(Na)cathode luminescence peaks appear at 420 and 305 nm,and CsI(Tl)cathode luminescence peaks are 540 and 410 nm,the grain size affects CsI(Na)luminescence significantly,and the Na-related420 nm luminescence intensified relatively when the average grain size reaches~20μm,which becomes weak when the grain size is down to nano-scale.But the cathode luminescence spectra of CsI(Tl)crystals with different size have no obvious changes.Our explanations for these phenomena are that the different impurities in the same host material CsI lead to different luminescence mechanisms.These cathode luminescence characteristics indicate the suitability of CsI(Na)and CsI(Tl)crystals to match photomultiplier tube for large area crystal detector development.     

Optical gain measurements in doped alkali-halides

In order to verify the possibility of obtaining laser action in doped alkali-halides crystals, optical amplification measurements have been performed by the amplified spontaneous emission (ASE) technique. Results obtained in CsI : In(Tl) crystal are reported and discussed.     

HIRFL-CSR ETF多层CsI(Tl)望远镜探测器能量刻度方法

在兰州重离子加速器冷却储存环（HIRFL-CSR）的外靶终端（ETF）,设计建造了一套多层CsI（Tl）望远镜探测器,用于对轻质量带电粒子的鉴别。这套探测器由7层CsI（Tl）晶体组成,每一层晶体光输出信号由4个光电倍增管分别在晶体4角读出。由于CsI（Tl）晶体对于重离子的响应是非线性的,且与入射离子的种类有关,这些因素使得对这台探测器的能量刻度需要做专门的研究。利用RIBLL2提供的能量在200 s~300 MeV/u的次级束流对探测器进行了测试,并针对第一片CsI（Tl）晶体的光输出以及所有CsI（Tl）晶体光输出的和的刻度方法分别进行了探索。在此能区下,第一片CsI（Tl）晶体猝灭现象可以近似忽略,即光输出与能量沉积近似呈线性。对于所有晶体光输出的和,利用一个经验公式对其进行刻度,利用这种刻度方法计算得到的光输出的值与实验测量值之间的差别小于5%。A multi-layer CsI(Tl) telescope has been designed and constructed at External Target in Facility (ETF) terminal of the Cooling Storage Ring of Heavy Ion Research Facility in Lanzhou(HIRFL-CSR), and is used for identifying light charged particles. The detector consists of seven layers of CsI(Tl) crystals, and the signals of each crystal are read out by four photomultipliers at the corners. Since the response of the CsI(Tl) crystal to the heavy ions is non-linear and also depends on the species of the incident ions, the energy calibration method of the telescope must be carefully studied. With the help of the secondary beams selected by RIBLL2 in the energy ranges from 200 to 300 MeV/u, the telescope has been tested and the energy calibration method for the first-layer crystal together with the whole telescope has been investigated. In this energy region, the quench effect in the first-layer crystal can be neglected and a linear expression can be used to represent the relation between the light output and the energy deposition in the crystal. To the total light output of the telescope, an empirical formula is used for the energy calibration. The difference between the calculated results and the experiment data is globally less than 5%.     

X光高分辨探测用CsI(Tl)晶体的蒙特卡罗模拟研究

提出了一种基于CsI(Tl)闪烁晶体和面阵CCD器件、采用光纤和光纤面板进行光耦合及传输、以扇形束线阵扫描方式实现对X光高分辨探测的方案。CsI(Tl)晶体的尺寸大小将直接影响到晶体的发光效率及X光的高分辨探测,据此开展了蒙特卡罗模拟研究。模拟研究了X射线能量、X射线源到探测晶体的距离(源距)、CsI(Tl)晶体的厚度与X射线能量分布、全能峰效率与CsI(Tl)闪烁晶体转换效率之间的关系。结果表明,当X射线能量为120~450 keV,CsI(Tl)晶体尺寸厚度为0~1.5 cm变化时,全能峰效率的变化范围为31.34~96.74%,CsI(Tl)闪烁晶体的转换效率的变化范围为12.8~97.43%。可见,X射线的能量及CsI(Tl)闪烁晶体尺寸的厚度,是决定X光高分辨探测的重要参量,这对优化X光高分辨探测用CsI(Tl)晶体的尺寸设计具有一定的参考价值。     

STUDY ON RADIATION DAMAGE OF CHINESE-MADE HIGH-Z SCINTILLATION CRYSTALS

Radiation damage effects of several Chinese-made high-Z scintillation crystals have been studied on a ⁶⁰Co irradiation unit of 100KCi Results on small size BGO crystals irradiated by 60Co γ rays with various doses from 5×10³ to 7.5×10⁵rad are presented.The decrease in scintillation light output depends non-linearly on the dose applied and saturation effects above 5×10⁴rad have been observed.The spontaneous recovery of the light output can be described by the sum of at least three exponential functions.The radiation damage effects of small size BaF₂,CsI(Tl) and ZnWO₄ crystals at 5×10⁵rad were also investigated.Serious damage to BaF₂ has been found.Preliminary analyses indicate that this may be attributed to the inclusion of certain critical elements in the crystal.CsI(T1) after irradiation does not exhibit strong afterglow of noticeable coloration as were reported in the literature.     

狭长CsI(Tl)闪烁体发光效率的研究

提出了基于狭长CsI（Tl）闪烁体和面阵CCD器件,采用光纤和光纤面板进行光耦合及传输,以扇形束线阵扫描方式实现对X射线探测与成像的工业X-CT系统探测器方案.基此,通过物理分析及数学建模,利用Matlab模拟研究了X光能量小于450 keV时狭长CsI（Tl）闪烁体的发光效率等性能指标.研究结果表明：当光电吸收截面μph和康普顿吸收截面μc分别为0.000313和0.0000295、反射层反射系数R和衬底反射系数Rs分别取0.95和0.8、荧光线性吸收系数σ取0.000222 μm－1时,得到狭长CsI(Tl)闪烁晶体的长度l、高度h和宽度w取值范围分别是926～4512 μm、242～5000 μm和242～5000 μm的结论.在此范围内,既可使闪烁晶体有较好的空间分辨率又可获得最高的发光效率.     

Color centers in heavily irradiated CsI(Tl) crystals

The absorption and luminescence properties of CsI(Tl) crystals colored by irradiation are studied by the method of the time-resolved spectroscopy. The scheme of the electron transitions in CsI(Tl) crystal is suggested to explain the appearance of the color centers under exposure to the near-UV light. It is established that either of the two types activator color centers holds the charge carrier with opposite sign. The model of the hole Tl²⁺v_c⁻ activator color center is suggested. According to the model the positive charge of Tl²⁺ ion is compensated by the negative charge of a close cation vacancy v_c⁻. The color center emission reveals in the cathode-luminescence spectrum of the colored CsI(Tl) crystal. The high-dose irradiation of CsI(Tl) crystal results in the reduction of the decay time of the near-thallium self-trapped excitons (STE) emission. The decay kinetics of Tl²⁺v_c⁻ emission contains the time components typical for the decay kinetics of near-thallium STE emission. The reason of the observed effects is the energy transfer from the near-thallium STE excitons to the color centers via the inductive-resonant mechanism.     

Property measurement of the CsI (Tl) crystal prepared at IMP

Large-sized CsI(T1) single crystals,～Φ100 mmx350 mm,have been grown successfully,and this CsI(Tl) coupled with PD has been successfully utilized at RIBLL (the Radioactive Ion Beam Line in Lanzhou)to measure the energy of heavy ions as a stopping detector.The performances of CsI(Tl) detector coupled with PD and APD have been tested and compared,including the temperature dependence of scintillating light yield.     

CsI∶Tl晶体对高能X光照射量的响应关系研究

在X光探伤系统中使用效率较高的CsI∶Tl晶体作为X光转换体。CsI∶Tl晶体对X光的响应关系是精密图像处理、定量测量所需的一项重要参量,理论上已经推导了CsI∶Tl晶体对X光的响应呈现线性关系,并针对性地设计了在60Co放射源上的定量测量实验,所获数据不仅充分证明了理论推导的正确性,还证明了相应系统的这种线性关系的线性度非常好。     

闪烁晶体碘化铯在紫外光和X射线激发下的发光特性

室温下掺铊碘化铯(CsI∶Tl)晶体的吸收谱在230~320 nm范围内有3个特征峰:310 nm(4 eV)、270nm(4.6 eV)和245 nm(5.1 eV)。采用这3种不同激发能量(对应不同激发机制)的近紫外(UV)光激发得到的荧光(PL)光谱相同。这些PL谱与钨(W)靶X射线激发的辐照致荧光(RL)谱也类似。经分峰计算,PL和RL均含有4种熟知的3.1 eV(400 nm)、2.55 eV(486 nm)、2.25 eV(550 nm)和2.1 eV(590 nm)发光组分,但RL中2.1 eV组分高于PL,同时2.55 eV组分又低于PL。分析认为,这一差异来自于X射线对晶体的辐照损伤Tl+Va+、Tl0Va+,相关的2.1 eV吸收峰与2.55 eV发光带重叠。结果表明:X射线比紫外光更易产生损伤从而影响晶体CsI∶Tl的发光特性。     

Temperature Effects of CsI(Tl) Crystal Detector with APD Readout

The temperature dependences of the light output of CsI(Tl) crystal grown at IMP and of the gain of the Hamamatsu S8664-1010 avalanche photodiode (APD) have been investigated systematically. The light output of the CsI(Tl) crystal increases with temperature by 0.67%/℃ in the region from －2℃ to 8℃, and by 0.33%/℃ in the region from 8℃ to 25℃, while the gain of the tested APD decreases by －3.68%/℃ (working voltage 400V) on average in the room temperature range. The best energy resolution 5.1% of the CsI(Tl) with APD was obtained for the 662keV γ ray from ¹³⁷Cs radiation source.     

X光作用下CsI:Tl晶体的转换效率研究

X光转换材料在数字辐射成像系统中具有很重要的作用,它的效率对整个系统的量子探测效率起到决定性的作用。对CsI∶Tl晶体在X光激发下的发光效率进行详细分析,根据X光在物质中的衰减和吸收规律,从理论上推导了其对X光转换效率的关系,并建立了利用CCD相机作接收系统时的图像数据的表达形式,表明该系统输出与入射X光照射量成线性关系;并在30 MeV射频加速器上进行了实验验证。     

CsI(Tl)晶体中反冲Cs和I核Quenching?Factor的测量

许多实验对用CsI(Tl)闪烁晶体作为探测器来寻找和探测暗物质的可行性进行了研究.本工作利用8MeV单能中子轰击CsI(Tl)晶体探测器来研究Cs核和I核的QuenchingFactor.在数据处理中,运用脉冲形状甄别(PSD)方法来分辨反冲核信号和本底信号.实验结果表明,在7keV到132keV的能区中,Quench ingFactor随着反冲核能量的减少而增加.在探测暗物质的实验中,这一性质对于CsI(Tl)晶体探测器获得较低的能量阈值是很有利的.     

A CsI(Tl) detector array used in the experiment of the proton-rich nucleus 17Ne

To investigate the configurations of the valence protons in Borromean nucleus 17Ne, a CsI(Tl) detector array, which consists of 9 CsI crystals (26×26×20mm3) coupled with photodiodes, has been successfully used in the 17Ne experiment to measure the energy of protons. In order to find the optimal working conditions and get the best energy resolutions, several technologies (including various wrapping materials, wrapping and coupling methods) have been used. The testing results showed that the best energy resolution of the CsI(Tl) is about 3.3% using the 241 Am α-source. The primary testing results with the proton beam were also provided.     

硅光电二极管作为CsI(Tl)晶体读出元件的实验研究

报道了硅光电二极管作为CsI(Tl)晶体读出元件的实验研究.测量了日本Hamamatsu生产的两种硅光电二极管的读出性能,包括能量分辨率与偏压、成形时间、灵敏面积和晶体尺寸的关系.     

Limits on interactions between weakly interacting massive particles and nucleons obtained with CsI(Tl) crystal detectors

The Korea Invisible Mass Search (KIMS) experiment presents new limits on the weakly interacting massive particle (WIMP)-nucleon cross section using data from an exposure of 3409 kg.d taken with low-background CsI(Tl) crystals at the Yangyang Underground Laboratory. The most stringent limit on the spin-dependent interaction for a pure proton case is obtained. The DAMA signal region for both spin-independent and spin-dependent interactions for the WIMP masses greater than 20 GeV/c2 is excluded by the single experiment with crystal scintillators.     

用于暗物质探测实验的CsI(Tl)晶体探测器性能的实验研究

在直接测量暗物质的实验中,反冲核能量的Quenching Factor是一个重要参数.用低能X射线源对一套测量入射中子引起的反冲核能量Quenching Factor的系统进行了能量刻度,得到了这套系统的能量响应关系.PMT单光电子的发射对应于晶体中的能量沉积约为0.32keV.同时研究了不同能量的X射线引起的PMT输出电流信号的积分时间宽度与积分电荷的关系,得到最佳的PMT输出电荷收集条件.     

暗物质寻找实验中CsI(Tl)晶体反符合探测器实验研究

一个正在建设的位于韩国Y2L地下实验室的低能暗物质探测实验中, 采用了CsI(Tl)晶体反符合探测器作为主动屏蔽体. 本工作对CsI(Tl)晶体反符合探测器的实验性能进行了研究. 通过FADC系统记录的脉冲波形数据, 研究了探测器的能量分辨率和波形甄别的能力; 研究相同能量γ射线入射到反符合探测器不同位置的相对光输出将有助于选择探测器的工作参数; 为了解晶体自身放射性对暗物质测量的影响, 利用低本底HPGe探测器对CsI(Tl)晶体内部的放射性进行了测量, 得到晶体内部Cs同位素的放射性活度. 探测器系统进行了约18d的试运行取数. 实验数据表明, CsI(Tl)晶体探测器的反符合效率约为31% HPGe探测器的本底计数率水平约为133cpd. 为了进行暗物质探测研究, 需要采取有效的方法进一步降低探测器的本底水平.     

ICP-AES法测定碘化铯晶体中的铊和钠

本文建立了电感耦合高频等离子体原子发射光谱法（ICP－AES）对碘化铯晶体中的铊和钠元素的直接同时测定方法，并对分析线的选择，溶液的酸度，基体效应，试样的溶解等条件进行了实验研究，用正交设计对仪器工作参数进行了最佳条件选择，采用本法测定碘化铯晶体中掺杂元素铊和钠的检出限分别为0．21ug/mL和0．095ug/mL，相对标准偏差分别为3．7％和2．4％，加标回收率介于87－102％，之间，该法简便，快速，准确，结果令人满意。