TIME DECAY BEHAVIOR OF FULLERENE-C60 STUDIED BY TIME-RESOLVED PHOTOLUMINESCENCE

The time-resoved photoluminescence spectra of C₆₀ have been studied from toluence solution at room temperature and from thin film at both room temperature and 77K. A photoluminescence peak at about 730nm was detected from solution at room temperature and film at 77K, in which lifetimes waz determined to be 1.1 and 0.9ns, respectively. At room temperature, the photoluminescence peak of thin film shifted to 740 nm with fast decay behavior which was fitted well to a double-exponential lifetimes with τ₁ = 0.087ns, τ₂= 0.68 ns. Two relaxation mechanisms are given tentatively in explaining this phenomenon.     

用溶胶-凝胶法掺杂的C60光荧光的温度行为

在甲苯溶液和薄膜材料中C60的光荧光研究已有许多报导,但对用溶胶-凝胶方法掺杂的C60的发光的温度行为研究尚未见报道。中子衍射研究表明,在不同温度下C60有不同的结构:温度高于260K以上,C60的结晶结构是面心立方,并且分子总是在自由旋转。C60分子间的相互作用很弱,由范德瓦尔斯力键合。它们之间不会有能量的转移,因而固态的C60发光基本上是单个分子发光;温度低于260K,是简立方结构,在一个原胞中有四个分子。由于绕<111>方向上的98°的旋转而导致取向的不均匀性。经过一较长滞留时间后,在这个方向上的一个非常快的60°跳跃,又形成一新的取向。低于90K时,C60分子开始冻结在简立方晶格上。可见,C60的结构对温度有相当显著的依赖关系。研究C60的光致发光的温度行为是有意义的。     

TIME-RESOLVED PHOTOLUMINESCENCE OF SINTERED ZnO CERAMICS

The time-resolved photoluminescence (TRPL) of sintered ZnO ceramics was measured at low temperatures. A broad luminescence band was observed in the visible region. The TRPL experiment shows that photoluminescence decay behaviour can be depicted as t^-n(r). The decay rate n(r) and lifetime are wavelength dependent, and the former varies exponentially with wavelength. The power-lowering behaviour of the luminescence intensity indicates that the luminescence band originates from the recombination of donor-acceptor pairs.     

多孔硅微秒光致发光衰减

在微秒范围内测量了多孔硅的光致发光衰减,研究了衰减参数与发光波长、样品制备条件的关系,发现衰减参数与发射波长有关,但不依赖于样品制备条件。用发光三层模型解释了实验结果。     

用时间分辨简并四波混频研究液晶相变前行为

我们采用时间分辨简并四波混频研究了MBBA液晶相变前分子取向弛豫时间随温度的变化。实验结果与Landau-de Gennes模型的理论预测基本相符。 关键词：     

氧化处理多孔硅的光致发光和发光衰减

用沸硫酸对多孔硅进行了处理,测量了它们的红外吸收光谱、光致发光光谱和发光衰减.对氢、氧的作用进行了讨论,发现氧的加入可使发光强度增加两个数量级,发光衰减变快.用三层发光模型对结果进行了讨论.     

量子阱中光生载流子的瞬态衰减过程与发光效率

提出了量子阱系统中包括非辐射复合效应和载流子屏蔽效应在内的光生载流子瞬态复合过程的唯象模型．结果表明，荧光衰退时间与样品质量、掺杂浓度以及激发光强度有着密切的联系 关键词：     

稀土配合物的时间分辨荧光光谱法研究(Ⅱ)——Eu,Sm-DBM-TOPO体系的荧光衰减动力学特性和激光诱导时间分辨荧光光谱

本文以Nd:YAG泵浦的染料激光器为激发光源,门控光学多道分析仪为检测器,自制的触发器和荧光盒组装成一台激光诱导时间分辨光谱装置。采用此装置研究了在表面活性剂Triton X-100存在下铕、钐-二苯甲酰甲烷-三正辛基氧化膦(Eu、Sm-DBM-TOPO)体系的激光诱导发光光谱特性和荧光衰减动力学特性。讨论了荧光发射过程中的能量传递机制。拟定出测定痕有铕和钐的时间分辨光谱方法,用于高纯稀土氧化物等样品中痕量铕和钐的测定,结果满意。     

用XPS研究GD-a-SixC1-x:H膜中等离子体激元的特征

对于GD-a-Si_xC_1-x:H薄膜进行了XPS分析,得到了一些与Katayama相类似的结果。本文将给出GD-a-Si_xC_1-x:H样品的价电子等离子激元(Plasmon)的频率ω_p以及原子浓度(N_si+N_C+N_H)随样品含碳量的变化,Si2p和C1s芯电子结合能随含碳量变化的化学移动,并对这些结果进行了初步的分析。 关键词：     

时间分解分析法测定钢中微量铝

本文应用时间分解分析法测定了直读光谱仪单个脉冲的时间特性以及铝工作曲线的背景当量浓度随时间分隔点变化的规律比较了在不同光源条件下Ａｌ３９４．４ｎｍ的Ｓ／Ｎ的差异。采用本方法钢中铝的检出限为０．０００２４％，分析一个试样的时间小于一分钟，适合于钢中微量铝的在线分析。     

嵌入多孔硅中的C60分子的发光行为

1990年团簇C60分子分离的成功[1],立即引起了科学界的极大重视,有关C60分子的超导电性、光谱特性以及电子能级结构的研究报道与日俱增,由于单个C60分子是直径为7.1Å的球形分子,因而在某种程度上对于由C60分子聚集而成的具有几个纳米尺寸的CBO微晶的体系应该也具有类似于半导体超微粒低维量子限域的物理特性.     

PAM/POEA无规共聚物水溶液中自聚集机制的NMR研究

¹H NMR谱和二维核Overhauser效应谱(2D NOESY)研究结果表明新型疏水缔合丙烯酰胺/2-苯氧乙基丙烯酸酯无规共聚物(PAM/POEA)在水溶液中的自聚集主要发生在酚基间以及酚基与主链的相互作用上,在PAM/POEA自聚集体中酚基主要位于丙烯酰胺主链骨架附近.     

用“矩”方法分析荧光衰减

叙述一个用于计算闪光激励荧光发射寿命的方法。许多生物聚合物及生物聚合物复合体的激励态荧光衰减,一般不是一个简单的指数函数,并且发射寿命与仪器的响应时间可比较。“矩”方法可以用于研究分析这种聚合物或复合物激发态单指数或多指数衰减。这一方法的计算用TQ-16计算机来完成。实验结果表明,“矩”方法作为分析衰减曲线的工具是有前途的。     

TIME-RESOLVED SAXS/WAXS STUDY OF PHASE BEHAVIOR AND CRYSTALLIZATION IN POLYMER BLENDS

Real-time SAXS and WAXS patterns have been simultaneously obtained during isothermal melt-crystallization of blends of low-molecular-weight poly(ethylene oxide) (PEO) and poly(methyl methacrylate) (PMMA). The analysis of results shows that the originally homogeneous, single-phase polymer blend separates into two phases. The PMMA molecules diffuse from the blend and form completely segregated regions while PEO starts to crystallize. The first and dominating effect at the beginning of crystallization is the formation of unstable lamellae of nonintegrally folded chains (NIF). The real-time crystallinity and density of the PEO crystalline phase in absolute units were obtained from the time-resolved SAXS/WAXS results. The structure development proceeds in two steps. A very fast evolution of PEO crystals from the melt starts to crystallize in disordered NIF lamellae with thick amorphous interlayers and with a lower density of crystalline phase. The steep growth of crystallinity and crystalline density mean quick thickening of crystalline part of lamellae and improvement of their crystalline structure. In the second step, the structure of the crystalline phase gradually improves and crystallinity grows very slowly. The recrystallization of NIF lamellae into extended chain lamellae (EC) and lamellae with once folded chains (1F) proceeds during both stages of crystallization.     

用等离子体增强化学汽相沉积方法制备纳米晶粒硅薄膜光致发光

报道用高氢稀释硅烷为反应气源，用等高子体增强化学汽相沉积（ＰＥＣＶＤ）方法淀积的含有纳米晶粒硅薄膜，未经任何后处理过程，在室温下观察到可见光致发光。将此光发射归因于纳米硅晶粒中的光生载流子在量子尺寸效应下所产生的光子能量高于硅单晶本体能隙，还对发光具有重要影响的一些淀积参数进行了研究。 关键词：     

SOLVATION DYNAMICS OF METHANOL INVESTIGATED BY FEMTOSECOND TIME-RESOLVED FLUORESCENCE UP-CONVERSION TECHNIQUE

The solvation dynamics of methanol has been investigated using a femtosecond time-resolved fluorescence up-conversion technique. Transient fluorescence spectra of Coumarin 152A dissolved in methanol at different time were reconstructed from the measured fluorescence decays. The Stokes shift was obtained and the solvent response function S_v(t) was fitted using a bimodal function with a fast Gaussian component and a slow bi-exponential component. The Gaussian component was attributed to the effect of free streaming motion of the solvent molecules, whereas the bi-exponential component was caused by the rotational diffusion motion of the solvent molecules. A comparison of our results with reported data was made.     

自然氧化引起的多孔硅光致发光光谱移动问题

多孔硅发光是激发电子通过表面态间接的复合过程。自然氧化引入新的表面态，改变了表面态的分布，从而引起了多孔硅光致发光光谱的移动。 关键词：     

MBE生长的掺Be p-GaAs的光荧光谱

本文报道利用国产分子束外延(MBE)设备和Be元素生长的p-GaAs的低温光荧光谱,观察到FE,(D°,X),(A°,X),(D+,X)等束缚激子发光,判断外延层有较好的质量。在1.503～1.515eV之间观察8条与缺陷有关的(d,x)发光线。仔细分析了与Be,Ge受主有关的(BA)和(DA)发光现象。     

PHOTOLUMINESCENCE OF NANOCRYSTALLINE SiC FILMS PREPARED BY RF MAGNETRON SPUTTERING

Amorphous SiC films are deposited on Si (111) substrates by rf magnetron sputtering and then annealed at 1200℃ for different times by a dc self-heating method in a vacuum annealing system. The crystallization of the amorphous SiC is determined by Raman scattering at room temperature and X-ray diffraction. The experimental result indicates that the SiC nanocrystals have formed in the films. The topography of the as-annealed films is characterized by atomic force microscopy. Measurements of photoluminescence of the as-annealed films show blue or violet light emission from the nanocrystalline SiC films and photoluminescence peak shifts to short wavelength side as the annealing time decreases.     

INCREASING THE PHOTOLUMINESCENCE INTENSITY OF Ge ISLANDS BY CHEMICAL ETCHING

Self-assembled Ge islands were grown on Si(100) substrate by Si₂H₆-Ge molecular beam epitaxy. After being subjected to chemical etching, it is found that the photoluminescence from the etched Ge islands became more intense and shifted to the higher-energy side compared to that of the as-deposited Ge islands. This behaviour was explained by the effect of chemical etching on the morphology of the Ge islands. Our results demonstrate that chemical etching can be a way to change the luminescence property of the as-deposited islands.