Vector Coherent State Representations of SO5 SU2 SU2 U1 U1 and SO5 U1 U1

VCS representantions of SO₅ SU₂ SU₂ U₁ U₁ and SO₅ U₁ U₁ are discussed.Reduced matrix elements for SO₅ SU₂ SU₂ are derived.The multiplicity of a weight for SO₅ is determined by using the K-matrix technique.     

A Two-Parameter Deformed Two-Dimensional Interacting Boson Model With Uqp(U3)Uqp(U2)Uqp(SO2) Symmetry

A two-parameter deformed two-dimensional interacting boson model with U_qp(U₃) U_qp(U₂) U_qp(SO₂)symmetry is constructed.It is found that the energy spectrum and transition matrix elements depend very sensitively on the second parameter of deformation.     

Vector Coherent State Representations of SU3 in U1 U1 Basis

In this paper,Vector Coherent State (VCS) representations of SU₃ in U₁ U₁ basis are discussed.Orthonormal basis vectors for SU₃ U₁ U₁ are derived and the multiplicity of a weight for SU₃ U₁ U₁ is determined by using K-matrix technique.     

Memory Effect of Metal--Insulator--Silicon Capacitors with SiO2/HfO2/Al2O3 Dielectrics

Charge trapping characteristics of the metal-insulator-silicon （MIS） capacitors with Si02/HfO2//A12O3 stacked dielectrics are investigated for memory applications＇. A capacitance-voltage hysteresis memory window as large as 7.3 V is achieved for the gate voltage sweeping of ±12 V, and a fiat-band voltage shift of 1.5 V is observed in terms of programming under 5 V and I ms. Furthermore, the time- and voltage-dependent charge trapping characteristics are also demonstrated, the former is related to charge trapping saturation and the latter is ascribed to variable tunnelling barriers for electron injecting and discharging under different voltages.     

Fabrication and Characterization of SmCo5/Fe65Co35 and SmCo5/Fe Composite Spring Exchange Magnets

SmCo5/Fe65Co35 and SmCo5/Fe spring exchange magnets are fabricated by dc magnetron sputtering on MgO substrates and 100-nm-thick Si3N4 membranes, respectively. The base pressure of sputtering chamber is kept below 10^-7 Tort, and Ar pressure is 3 to 8mTorr. The samples are characterized by an x-ray diffractometer, a superconducting quantum interference magnetometer, and high resolution magnetic soft x-ray microscopy. We obtain the complete exchange coupling and single phase behaviour of composite magnets. The （BH）max value achieved is 28.8 MGOe.     

Superconductivity in Hole-Doped （S1-xKx）Fe2As2

A series of layered （Sr1-xKx）Fe2As2 compounds with nominal x = 0-0.40 are synthesized by solid state reaction method. Similar to other parent compounds of iron-based pnictide superconductors, pure SrFe2As2 shows a strong resistivity anomaly near 210 K, which was ascribed to the spin-density-wave instability. The anomaly temperature is much higher than those observed in LaOFeAs and BaFe2As2, the two prototype parent compounds with ZrCuSiAs- and ThCr2Si2-type structures. K-doping strongly suppresses this anomaly and induces superconductivity. Like in the case of K-doped BaFe2As2, sharp superconducting transitions at Tc ～ 38 K is observed. We perform the Hall coefficient measurement, and confirm that the dominant carriers are hole-type. The carrier density is enhanced by a factor of 3 in comparison to F-doped LaOFeAs superconductor.     

Mixing between the 23S1 and 13D1 Ds

Mixing between the 2³S₁ and 1³D₁ D_s is studied within the ³P₀ model. If mixing between these two 1^- states exists, D_s1^*(2700)^± and D_sJ^*(2860)^± could be interpreted as the two orthogonal mixed states with mixing angle θ≈ -80° in the case of a special β for each meson. However, in the case of a universal β for all mesons, D_s1^*(2700)^± could be interpreted as the mixed state of 2³S₁ and 1³D₁ with mixing angle 12° < θ < 21° but D_sJ^*(2860)^± seems difficult to interpret as the orthogonal partner of D_s1^*(2700)^±.     

CdGd2(WO2)4单晶的顺磁共振谱研究

通过粉末XRD测定了CdGd₂(WO₂)₄单晶的晶格常数,由σ- T和ESR实验得出晶体具有顺磁性,但又具有磁各向异性,探讨了晶体的磁各向异性与晶体结构的关系,计算了各向异性g²张量,所得结果和实验符合甚好.      

Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films Crystallized inDifferent N2/O2 Ambients

Bi3.25La0.75 Ti3O12 （BLT） ferroelectric thin films are deposited by sol-gel method and annealed for crystallizaion in total l eccm N2/02 mixed gas with various ratio at 750℃ for 30rain. The effect of crystallization ambient on the structural and ferroelectric properties of the BLT films is studied. The growth direction and grain size of BLT film are revealed to affect ferroeleetric properties. Alter the BLT film is annealed in 20%O2, the largest P~ value is obtained, which is ascribed to an increase of random orientation and large grain size. The fatigue property is improved with the concentration of oxygen in the ambient increasing, which is ascribed to annealing in the ambient with high concentrated oxygen adequately decreasing the defects related to lack of oxygen.     

Preparation and Luminescence Characteristics of Ca3Y2（BO3）4：Eu^3＋ Phosphor

Ca3Y2 （BO3）4：Eu^3＋ phosphor is synthesized by high temperature solid-state reaction method, and the Iuminescence characteristics are investigated. The emission spectrum exhibits two strong red emissions at 613 and 621 nm corresponding to the electric dipole ^5 Do- ^7F2 transition of Eu^3＋ under 365 nm excitation, the reason is that Eu^3＋ substituting for Y^3＋ occupies the non-centrosymmetric position in the crystal structure of Ca3 Y2 （BO3）4. The excitation spectrum for 613 nm indicates that the phosphor can be effectively excited by ultraviolet （UV） （254 nm, 365nm and 400nm） and blue （470nm） light. The effect of Eu^3＋ concentration on the emission intensity of Ca3 Y2 （BO3）4 ：Eu^3＋ phosphor is measured, the result shows that the emission intensities increase with increasing Eu^3＋ concentration, then decrease. The CIE colour coordinates of Ca3Y2 （BO3）4：Eu^3＋ phosphor is （0.639, 0.357） at 15mol% Eu^3＋.     

High-Temperature Dielectric Response and Multiscale Mechanism of SiO2/Si3N4 Nanocomposites

The high-temperature dielectric properties of SiO₂/Si₃N₄ nanocomposites are investigated theoretically and experimentally. Its permittivities and loss tangents at the temperature ranging from room temperature to 1300°C at 9.0GHz are measured by the resonant cavity method. The SiO_2/Si₃N₄ nanocomposites show complex dielectric behaviour at elevated temperature, and a multi-scale model is proposed to describe the dependence of the dielectric properties in the SiO₂/Si₃N₄ on its compositional variations. Such a theory is needed so that the available property measurements could be extrapolated to other operating frequencies and temperatures.     

Resonant Tunnelling and Storage of Electrons in Si Nanocrystals within a-SiNx/nc-Si/a-SiNx Structures

The a-SiNx/nanocrystalline silicon （nc-Si）/a-SiNx sandwiched structures with asymmetric double-barrier are fabricated in a plasma enhanced chemical vapour deposition （PECVD） system on p-type Si substrates. The nc-Si layer in thickness 5nm is fabricated from a hydrogen-diluted silane gas by the layer-by-layer deposition technique. The thicknesses of tunnel and control SiNx layers are 3nm and 20nm, respectively. Frequency-dependent capacitance spectroscopy is used to study the electron tunnelling and the storage in the sandwiched structures. Distinct frequency-dependent capacitance peaks due to electrons tunnelling into the nc-Si dots and capacitance-voltage （C - V） hysteresis characteristic due to electrons storage in the nc-Si dots are observed with the same sample. Moreover, conductance peaks have also been observed at the same voltage region by conductance-voltage （G - V） measurements. The experimental results demonstrate that electrons can be loaded onto nc-Si dots via resonant tunnelling and can be stored in our a-SiNx/nc-Si/a-SiNx structures.     

Resistance Switching Characteristic and Charge Carrier Self-Trapping in Epitaxial Pr0.7（Ca1-xSrx）0.3MnO3 Thin Films

Carrier injection performed in Pro.7 Cao.aMnOa junctions demonstrate resistance switching （RS） characteristic with dramatic changes in both resistances and interface barriers, which suggests a charge carrier self-trapping model in strongly correlated electronic framework. Un-stable RS behaviour without electric fields in epitaxial Pr0.7（Ca1-xSrx）0.3MnO3 （PCSMO） films shows dependences on insulator-metal transition temperature, which indicates that RS process is really related to the intrinsic property of carriers. The switched resistance of epitaxial PCSMO films also depends on the amount of current pulses, which shouM be another evidence of the carrier self-trapping model, similarly to the dependence on the amount of self-trapped charge carriers.     

Direct observations of vortices in a high-Tc superconductor (La1-xSrx)2CuO4 by scanning SQUID microscopy

In order to investigate the behavior of vortices in high-T_c superconductors under low magnetic fields, we have performed scanning SQUID microscopy (SSM) on the ab-surfaces of (La_1-xSr_x)₂CuO₄ (LSCO) single crystals at low temperatures. The observed magnetic images clearly demonstrated vortices in units of K₀ (=hc/2e) below T_c. Vortices trapped inside the overdoped LSCO tended to be arranged in a one-dimensional manner, while those in optimally doped crystals were randomly distributed. From the variable-temperature SSM measurements, it was directly visualized that the normal state with regular magnetic-field distribution gradually changed into the inhomogeneous Meissner state, and finally vortices evolved, with decreasing temperature.     

Electroluminescence from Multilayered Diamond/CeF3/SiO2 Films

We report a thin film electroluminescent device with a three-layer structure （diamond/CeF3/SiO2 films）, which has a luminance of 1.5 cd/m^2 at dc voltage 215 V. The electroluminescence spectrum at room temperature shows that the main peaks locate at 527 and 593nm, which are attributed to isolated emission centers of Ce^3＋ ions.     

Acceptor Concentration Effects on Photovoltaic Response in the La1-xSrxMnO3/SrNbyTi1-yO3 Heterojunction

Photovoltaic response in the heterojunction of La1-x SrxMnO3/SrNby Ti1-yO3 （LSMO/SNTO） is analyzed theoretically based on the drift-diffusion model. It is found that the decrease of acceptor concentration in the La1-xSrxMnO3 layer of hereto junction can increase the peak value of photovoltaic signal and the speed of photovoltaic response, whereas the changing of donor concentration in the SrNby Ti1-yO3 layer has no such evident effect. Furthermore, the result also indicates that the modulation of Sr doping in La1-xSrxMnO3 is an effective method to accommodate the sensitivity and the speed of photovoltaic response for LSMO/SNTO photoelectric devices.     

Correlation between Light Emissions from Amorphous-Si：H/SiO2 and nc-Si/SiO2 Multilayers

We investigate the properties of light emission from amorphous-Si：H/SiO2 and nc-Si/SiO2 multilayers （MLs）. The size dependence of light emission is well exhibited when the a-Si：H sublayer thickness is thinner than 4 nm and the interface states are well passlvated by hydrogen. For the nc-Si/Si02 MLs, the oxygen modified interface states and nanocrystalline silicon play a predominant role in the properties of light emission. It is found that the light emission from nc-Si/SiO2 is in agreement with the model of interface state combining with quantum confinement when the size of nc-Si is smaller than 4 nm. The role of hydrogen and oxygen is discussed in detail.     

Improvement of Atomic-Layer-Deposited Al2O3/GaAs Interface Property by Sulfuration and NH3 Thermal Nitridation

Fermi level pinning at the interface between high-h gate dielectric and GaAs induced by unstable native oxides is a major obstacle for high performance GaAs-based metal-oxide-semiconductor （MOS） devices. We demonstrate the improved Al2O3/GaAs interracial characteristics by （NH4）2S immersion and NH3 thermal pretreatment prior to A1203 deposition. X-ray photoelectron spectroscopy （XPS） analysis confirms that sulfuration of GaAs surface by （NH4 ）2S solution can effectively reduce As-O bonds while Ga-O bonds and elemental As still exist at Al2O3 /GaAs interface. However, it is found that N incorporation during the further thermal nitridation on sulfurated GaAs can effectively suppress the native oxides and elemental As in the sequent deposition of Al2O3. Atomic force microscopy （AFM） shows that the further thermal nitridation on sulfurated GaAs surface can also improve the surface roughness.     

A Strength Softening Phase Transition Observed in Shocked （Mg0.92,Fe0.08）SiO3 Perovskite at About 83 GPa

We report the experimental data of Hugoniot longitudinal sound velocity VL for natural （Mg0.92,Fe0.08）SiO3 enstatite sample at about 40-140 GPa, consisting of three new data and five previously reported data but revised by our new Hugoniot equation of state parameters. Three segments, separated by two discontinuities, appear in the VL-PH （shock pressure） plot. Analyses show that the first discontinuity at about 64 GPa, with a sharp increase of VL of about 21%, is judged to be a phase transition from enstatite to Pbnm perovskite （PV）; while the second one at about 83 GPa, with a dramatic decrease of VL of about 23%, is likely caused by a subtle structural change from Pbnm PV to tetragonal PV, accompanied by material strength softening due to melting of oxygen sublattices. This strength softening evidence is obtained first from shock wave experiments, and probably has profound implications for probing into the origin of low seismic velocity anomaly in the Earth＇s lower mantle and thus constraining the geophysical and geochemical models for the Earth＇s lower mantle.     

Structural and electrical properties of La0.5Sr0.5CoO3 films on SrTiO3 and porous a-Al2O3 substrates

Films of La_0.5Sr_0.5CoO₃ (LSCO) have been deposited on specially treated TiO₂-terminated (001) SrTiO₃ substrate surfaces and on macroporous polycrystalline !-Al₂O₃ substrates, having a mean pore diameter of 80 nm, by pulsed laser deposition. The films deposited on SrTiO₃ are good conducting, (001) textured, and exceptionally smooth (1-2 Å for 100 nm thick films). LSCO films deposited on porous !-Al₂O₃ are polycrystalline and exhibit good crystallographic and electrical properties despite the large substrate roughness and the differences in lattice parameters and crystal structure between the film and the substrate. Different growth modes have been observed on the porous !-Al₂O₃ substrates depending on the oxygen pressure during film deposition. Films grown at an oxygen pressure of 10^-1 mbar are macroporous, whereas films grown at 10^-2 mbar completely cover the substrate pores. In the latter case, strain effects lead to film cracking.