砷化镓中质子注入之研究

本文中,我们研究了砷化镓中质子注入及退火恢复过程。实验用晶向<100>偏1—3°,掺Sn 5×10¹⁷-1×10¹⁸cm^-3的单晶,室温下质子注入,注入能量E约8×10⁴—2×10⁶eV,用A-B腐蚀剂对注入质子样品的解理面显结,测得质子注入高阻层的纵向深度x_j和径向扩展x_L与注入能量E的定量关系。然后,对注入质子样品,在150—800℃下退火5分钟,用双晶衍射仪研究了样品的应变恢复过程,在静电计上测量了高阻阻值随退火温度的变化。根据实验结果,讨论了砷化镓中质子注入的射程R_p,电子阻止本领S_n(E)和核阻止本领S_e(E),以及质子注入形成高阻和退火恢复的机理。 关键词：     

CEMS和慢正电子束研究ZrO2(Y)中Fe的热动力学行为

用内转换电子穆斯堡尔谱（ＣＥＭＳ）和慢正电子束研究了含３％Ｙ₂Ｏ₃的ＺｒＯ₂中⁵⁷Ｆｅ离子（１００ｋｅＶ，３×１０¹⁶ａｔ．／ｃｍ²）注入态及其在氢气氛中退火的热力学行为．注入态以Ｆｅ³⁺，Ｆｅ²⁺和Ｆｅ⁰存在，它们分别是Ｆｅ³⁺-Ｖ（空位）复合体、二聚体和超顺磁颗粒．经４００，５００℃退火后，Ｆｅ³⁺-Ｖ分解，分别出现了α-Ｆｅ的前期相和α-Ｆｅ纳米颗粒．含Ｆｅ的ＺｒＯ₂（Ｙ）混合导电的出现可能是和Ｆｅ的不同价态及其相对含量有关 关键词：     

LiNbO3和LiTaO3晶体Er3+/Yb3+掺杂水热外延层室温吸收光谱分析

本文引入与浓度和厚度有关的k_NL待定参数, 在J-O理论基础上, 对Er³⁺/Yb³⁺掺杂的LiNbO₃和LiTaO₃单晶衬底上 的多晶水热外延样品进行了基于吸收光谱的拟合计算. LiNbO₃:Ω₂=2.34× 10^-20 cm², Ω₄=0.77× 10^-20 cm², Ω₆=0.31×10^-20 cm², k_NL=4.32× 10^-2 mol·m^-2. LiTaO₃:Ω₂=1.68×10^-20 cm², Ω₄=0.84×10^-20 cm², Ω₆=0.45×10^-20 cm², k_NL=9.17×10^-3 mol· m^-2. 该方法可尝试推广到粉体或胶体等难以直接获得浓度和厚度数据的体系. 经上转换发光测试及光谱参数计分析认为Er³⁺/Yb³⁺离子的掺杂浓度比为1:1的情况下, 样品呈现绿色上转换发光光谱; 可尝试以降低基质声子能量的方法提高⁴I_13/2能级 对²H_11/2和⁴S_3/2能级的量子剪裁效率.     

Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers

Silicon nanocrystals have been synthesized in SiO₂ matrix using Si ion implantation. Si ions were implanted into 300-nm-thick SiO₂ films grown on crystalline Si at energies of 30–55 keV, and with doses of 5×10¹⁵, 3×10¹⁶, and 1×10¹⁷ cm⁻². Implanted samples were subsequently annealed in an N₂ ambient at 500–1100°C during various periods. Photoluminescence spectra for the sample implanted with 1×10¹⁷ cm⁻² at 55 keV show that red luminescence (750 nm) related to Si-nanocrystals clearly increases with annealing temperature and time in intensity, and that weak orange luminescence (600 nm) is observed after annealing at low temperatures of 500°C and 800°C. The luminescence around 600 nm becomes very intense when a thin SiO₂ sample is implanted at a substrate temperature of 400°C with an energy of 30 keV and a low dose of 5×10¹⁵ cm⁻². It vanishes after annealing at 800°C for 30 min. We conclude that this luminescence observed around 600 nm is caused by some radiative defects formed in Si-implanted SiO₂.     

As+注入硅的紫外-可见椭圆偏振光谱

本文采用椭圆偏振光谱法研究了剂量为1×10¹⁶—3×10¹²cm^-2的As⁺注入硅,及其在700℃退火后的光学性质。得出:当As⁺注入剂量增大到某一程度后,便呈非晶特性。低于临界剂量的样品,其n-λ,ε₂-λ关系曲线随剂量的增大而往下方移动,呈有规律变化;退火后,在大于4000?波段,n-λ与ε₂-λ曲线基本恢复到单晶硅状态。但在小于4000?的紫外区却未完全恢复,注入剂量越大,偏离单晶硅就越大。并指出,紫外光区是离子注入硅的信息敏感区;用有效质量模型计算出注入剂量与损伤度的关系。计算结果与实验符合得较好。 关键词：     

FORMATION OF A BURIED LAYER OF ALUMINIUM NITRIDE BY HIGH DOSE N2+ IMPLANTATION INTO ALUMINIUM

Aluminium films with various thickness between 700 nm and 1μm were deposited on Si (100) substrates, and 400 keV N₂⁺ ions with doses ranging from 4.3×10¹⁷ to 1.8×10¹⁸ N/cm² were implanted into the alu-minium films on silicon, Rutherford Backscattering (RBS) and channeling, secondary ion mass spectroscopy (SIMS), Fourier transform infrared spectra (FTIR), X-ray diffraction (XRD), transmission electron microscopy (TEM) and spreading resistance probes (SRP) were used to characterize the synthesized aluminium nitride. The experiments showed that when the implantation dose was higher than a critical dose N_c, a buried stoichiometric AlN layer with high resistance was formed, while no apparent AlN XRD peaks in the as-implanted samples were observed; however, there was a strong AlN(100) diffraction peak appearing after annealing at 500 ℃ for 1h. The computer program, Implantation of Reactive Ions into Silicon (IRIS), has been modified and used to simulate the formation of the buried AlN layer as N₂⁺ is implanted into aluminium. We find a good agreement between experimental measurements and IRIS simulation.     

Studies of Bs^0 → η＇η＇ Decays in pQCD Approach

We calculate the CP averaged branching ratios and CP-violating asymmetries for Bs^0 → η＇η＇ and η＇η＇ decays in the perturbative QCD （pQCD） approach here. The pQCD predictions for the C P-averaged branching ratios are Br（Bs^0 → ηη）=（14.2-7.5^＋18.0） ×10^-6,Br（Bs^0 → ηη＇）=（12.4-7.0^＋18.2）×10^-6,and Br（Bs^0 → η＇η＇） =（9.2-4.9^＋15.3）×10^-6, which agree well with those obtained by employing the QCD factorization approach and also be consistent with available experimental upper limits. The gluonic contributions are small in size： less than 7% for Bs →ηηand ηη＇ decays, and around 18% for Bs →η＇η＇ decay. The CP-violating asymmetries for three decays are very small： less than 3% in magnitude.     

The Mass Bounds on Exotic Particles in an SU(3)L×U(1)X Model

We study an SU(3)_L×U(1)_X electroweak model. By requiring M²_Z1-M²_W/cos²θ_W to be less than experimental value we obtain a lower bound on Z' boson mass, M_Z' >600 GeV. The relation between M_Z' and M_U (M_V) then gives a lower bound on M_U (M_V):M_U (M_V)>490 GeV. From the constraint sin² θ_W(M_Z')<0.3, the upper bounds on M_Z' and M_U (M_V) are computed to be M_Z'<5.8×10⁴ TeV and M_U (M_V)<4.6×10⁴ TeV. We estimate further the K_L-K_S mass difference due to Z' exchange and try to use the result to obtain stronger lower bounds. On cosmological grounds we find that M_N<390 eV for T_f=2.3 GeV and M_N<740 eV for T_f=300 GeV.     

Ultrasensitive solar-blind ultraviolet detection and optoelectronic neuromorphic computing using α-In2Se3 phototransistors

Detection of solar-blind ultraviolet (SB-UV) light is important in applications like confidential communication, flame detection, and missile warning system. However, the existing SB-UV photodetectors still show low sensitivities. In this work, we demonstrate the extraordinary SB-UV detection performance of α-In₂Se₃ phototransistors. Benefiting from the coupled semiconductor and ferroelectricity property, the phototransistor has an ultraweak detectable power of 17.85 fW, an ultrahigh gain of 1.2 × 10⁶, a responsivity of 2.6 × 10⁵ A/W, a detectivity of 1.3 × 10¹⁶ Jones and an ultralow noise-equivalent-power of 4.2 × 10⁻²⁰ W/Hz^1/2 for 275 nm light. Its performance exceeds most other UV detectors, even including commercial photomultiplier tubes and avalanche photodiodes. It can be also implemented as an optoelectronic synapse for neuromorphic computing. A 784×300×10 artificial neural network (ANN) based on this optoelectronic synapse is constructed and demonstrated with a high recognition accuracy and good noise-tolerance for the Fashion-MNIST dataset. These extraordinary features endow this phototransistor with the potential for constructing advanced SB-UV detectors and intelligent hardware.     

Ω＋Ω→（ΩΩ）Jπ=0＋＋X Cross section Calculation

The cross sections of Ω+Ω→(ΩΩ)_J^π=0⁺+X are studied by using an effective Hamiltonian method. The results are σ_{Ω+Ω→(ΩΩ)0⁺+γ}=0.03～0.16×10^-29 cm² for p_Ω=100～400 MeV, and the cross sections of η production are about 10^-28 cm² for p_Ω > 880 MeV.     

淫羊藿苷与牛血清白蛋白相互作用

在模拟人体生理条件下,采用荧光光谱法及紫外-可见吸收光谱法研究了淫羊藿苷与牛血清白蛋白的相互作用。结果表明,淫羊藿苷对牛血清白蛋白有较强的猝灭作用,猝灭方式为静态猝灭。当温度为25℃和36℃时,淫羊藿苷对牛血清白蛋白的猝灭速率常数分别为4.37×10¹²mol·L^-1·s^-1和3.90×10¹²mol·L^-1·s^-1,结合常数K_A为3.55×10⁴L·mol^-1和3.97×10⁴L·mol^-1,结合位点数为1.12和1.04;根据Foerster非辐射能量转移理论,计算出淫羊藿苷与牛血清白蛋白之间的结合距离为2.08nm,热力学分析表明,淫羊藿苷与牛血清白蛋白之间以疏水作用力为主。     

Reversible H2 passivation of Si ≡ Si3 interface defects in (1 1 1)Si/SiO2

K-band electron spin resonance (ESR) at 4.3 K has revealed the dipole-dipole (DD) interaction effects between [1 1 1]P_b centers (^*Si ≡ Si₃ defects with unpaired sp³ hybrid [1 1 1]) at the 2 dimensional (1 1 1)Si/SiO₂ interface. This has been enabled by the perfectly reversible H₂ passivation of P_b, which affects the defect's spin state. Sequential hydrogenation at 253–353°C and degassing treatments in high vacuum at 743–835°C allowed to vary the P_b density in the range 5 × 10¹⁰ < [P_b] (1.14 ± 0.06) × 10¹³ cm^-2. With increasing [P_b] fine structure doublets are clearly resolved. It is found that (1 1 1)Si/SiO₂ interfaces, dry thermally grown at ≈920°C, naturally comprise a ^*Si ≡ Si₃ defect density — passivated or not — of 1.14 × 10¹³ cm^-2.     

碘化钾-镉(Ⅱ)-吖啶黄高灵敏离子缔合分光光度法测定痕量镉

以聚乙烯醇为表面活性剂,在pH3.6乙酸-乙酸钠缓冲介质中,吖啶黄与[cdI4]2-络阴离子形成稳定的离子缔合物[AY]2[CdI4].该缔合物的最大吸收波长为294nm,表观摩尔吸光系数为3.0×105L·mol-1·cm-1,Cd(Ⅱ)质量浓度在0-25μg· L-1范围内符合比耳定律.该法直接用于铜镉渣中镉的测定,选择性好、灵敏度高,相对标准偏差为4.5％,测定结果令人满意.     

快重离子辐照对MoS2热导率的影响研究

利用0.97 GeV的209Bi离子辐照二硫化钼（MoS₂）晶体,辐照注量范围为1×1010～1×1012 ions/cm2,结合原子力显微镜（AFM）观测和Raman光谱分析研究了快重离子辐照对MoS₂热导率的影响。实验结果显示,快重离子辐照在MoS₂中产生了潜径迹,较高激光功率下的Raman测试使样品局部温度升高,导致E_1/2g和A_1g峰随注量增加向低波数方向移动,且峰形展宽。引入了通过改变激光功率测量Raman光谱得到MoS₂热导率的计算方法,获得了不同辐照注量下MoS₂的热导率的定量分析结果,随注量增加,热导率不断降低,从未辐照样品的563 W/mK下降到1×1012 ions/cm2辐照时的132 W/mK。Molybdenum disulphide (MoS₂) was irradiated by 0.97 GeV 209Bi ions with the fluence of 1×1010 to 1×1012 ions/cm2. The irradiation effect on the thermal conductivity of MoS₂ was analyzed by atomic force microscope (AFM) and Raman spectroscopy. The experimental results show that hillock-like latent tracks are observed on irradiated MoS₂ by AFM. The measurement of MoS₂ by Raman spectrometer with high laser power results in the increase of local temperature of MoS₂, which cause the downshift of peaks position and broadening of E_1/2g and A_1g peak. Furthermore, according to Raman spectra measured at different laser power, thermal conductivity of MoS₂ before and after irradiation was calculated, which show that the thermal conductivity of MoS₂ decreases with increasing fluence, from 563 to 132 W/mK for pristine and 1×1012 ions/cm2 irradiated MoS₂, respectively.     

The Hanle effect for the 3 S1/2 ↔ 3 P1/2 transition of sodium

Experimental results are reported for the Hanle effect on the 3 ²S_1/2 ↔ 3 ²P_1/2 transition of sodium at vapour densities between 10⁹ and 10¹² at/cm³.     

Active species in microwave postdischarge for steel-surfacenitriding

Production of nitrogen atoms has been studied in a 2.45-GHz flowing postdischarge in N₂ and N₂-H₂ gas mixtures with Ar as a buffer gas in the high-pressure regime (5×10³ to 6.5×10⁴ Pa). N atom densities have been measured by NO titration in the 10¹⁴-10 ¹⁵ cm³ range and monitored by the first positive emission resulting from the N atom recombination. The rate coefficient of the N+N+N₂ recombination has been found to be _k=6×10^-33 cm⁶ atom^-2 s ^-1 at T₀=300 K, which agrees with previously published data. The N atom production (or degree of N/N₂ dissociation) in front of an Fe-0.1%C substrate correlates well with the thickness of a γ' Fe₄N layer produced by the postdischarge treatment. The H₂ gas was first introduced in the initial phase of treatment to remove surface oxidizing and then was cut off to keep high densities of N atoms. It is deduced that N atoms are more active nitriding species than NH-type radicals     

ZBLAN玻璃中Pr3+掺杂离子3P0和1D2能级的发光特性和寿命

对ZBLAN氟锆酸盐玻璃中Pr³⁺掺杂离子³P₀和¹D₂能级的寿命和发光特性进行了较详细的光谱学研究。首先测量了两种掺杂浓度(质量分数分别为1×10^-3,5×10^-3)的Pr³⁺:ZBLAN玻璃的吸收光谱,然后运用时间分辨激光光谱技术测量了³P₀和¹D₂能级在激光单光子共振激发下的荧光发射谱和能级寿命。将不同荧光发射谱带的强度和文献报道的Judd Ofelt理论计算辐射跃迁几率数值做了比较分析,证明了文献中理论计算结果的可靠性。由于浓度猝灭效应,在相同的激发条件下,掺杂浓度为1×10^-3样品的荧光发射强度明显大于5×10^-3样品的荧光发射强度。但是从我们的测量结果看,掺杂浓度对³P₀和¹D₂ 的能级寿命值无显著影响。掺杂浓度为1×10^-3时,Pr³⁺离子³P₀和¹D₂能级的寿命值分别为46,322μ_s。     

硫氰酸盐-吖啶红-阿拉伯胶光度法在水相中测定镍钼矿中微量钼(Ⅵ)

以抗坏血酸-硫脲为还原剂,在稀硫酸中Fe(Ⅲ)催化还原钼(Ⅵ)为钼(Ⅴ),并与硫氰酸盐形成配阴离子,在阿拉伯胶存在下与碱性阳离子染料吖啶红形成离子缔合物.其最大吸收波长为553nm,表观摩尔吸光系数为ε=2.7×105L·mol-1·cm-1,钼(Ⅴ)质量浓度在0.0017-80μg ·mL-1范围内服从比耳定律.适量酒石酸-草酸-柠檬酸水溶液可消除干扰离子的影响.用此方法在水相中直接测定镍钼矿中微量钼.     

红色长余辉材料Mg2SiO4：Dy3+,Mn2+的制备及发光特性

用高温固相法制备了长余辉发光材料Mg₂SiO₄:Dy³⁺,Mn²⁺,对这种材料的红色长余辉性质进行了研究.对以不同掺杂浓度单掺杂Mn²⁺、单掺杂Dy³⁺以及双掺杂Dy³⁺,Mn²⁺的Mg₂SiO₄体系,通过在紫外激发下的发射光谱及其激发光谱的研究,确认了在双掺杂体系中,峰值为660nm的发光带对应着Mn²⁺的⁴T₁(⁴G)→⁶A₁(⁶S)跃迁,Mn²⁺为主要发光中心.Mn²⁺的660nm发射的激发谱分布很宽,样品在近紫外和可见光区都有良好的吸收,长波边可达600nm,是这种材料的一个显著优点.还研究了双掺杂体系中Dy³⁺对Mn²⁺的660nm发光带的敏化作用.另外,通过对单掺杂、双掺杂体系热释光曲线的比较,揭示了双掺杂体系中Dy³⁺的陷阱作用.     

SIMS STUDY OF OXYGEN SPIRAL DIFFUSION C-TEXTURED Yba2Cu3O7-δ/SrTiO3 EPITAXIAL THIN FILM

Secondary ion mass spectroscopy was used to study the chemical diffusivity of 0¹⁸ in c-textured YBa₂Cu₃O_7-δ/SrTiO₃ epitaxial thin film. By fitting experimental data to the one- dimensional diffusion curve, the apparent diffusivity along the c-axis was obtained to be equal to l.02×10¹⁴cm²/sec when the temperature was 350℃. A computer analysis method was put forward to calculate the "spiral diffusion" process, and the diffusivity anisotopy of films with different mosaic size obtained. For a film of 7000×7000?² mosaic size, Dab was found to be ～3.55×10^-5xexp((-1.03 ev)/kT) cm²/sec. The calculated results reveal that the variation of the results of Dc is not the result of diffusivity anisotropy but of the difference in mosaic size.