首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 31 毫秒
1.
In this paper we propose an SU(4)×SU(2)×U(1) unified model, in which the stratons and leptons of every generation belong to the same Multiplet, and the leptons will couple to the stratons. But this kind of coupling cannot cause the proton decay, and has only some effects in high energy scatterings. This model predicts the existense of two neutral intermediate bosons, instead of one, and the value of Weinberg angle to be sin2θw=0.25. The neutrinos have reasonable masses in the model.  相似文献   

2.
SU(3)L×U(1)X     
《中国物理 C》1999,23(11):28
提出了一个基于SU(3)  相似文献   

3.
4.
Microporous (TiO2) x –(SiO2)100 − x (0 < x < 40) xerogels have been produced by sol–gel methods either by partial pre-hydrolysis or reflux of tetraethoxysilane and titanium isopropoxide. These have been characterised by 29Si nuclear magnetic resonance, X-ray diffraction, EXAFS at the Ti–K edge, X-ray photoelectron spectroscopy, temperature-programmed reduction, FT infrared, N2 adsorption at 78 K (BET), transmission electron microscopy and dynamic light scattering (DLS). These were dip coated onto fused silica and characterised by atomic force microscopy and UV–visible absorption. Their photoactivity in removal of alkylphenol ethoxylate TX100 from water was less than for less porous titania. The advantages of including thermally removable PEG or PPG templates in terms of increasing surface, meso-porosity and photon absorbance at visible wavelengths to give nanoengineered photocatalytic films are described.  相似文献   

5.
CaAs(100)的(NH4)2Sx和P2S5/(NH4)2Sx表面钝化   总被引:1,自引:0,他引:1       下载免费PDF全文
利用光致发光谱、X射线光电子谱和俄歇电子谱等技术研究了(NH_4)_2S_x和P_2S_5/(NH_4)_2S_5化学钝化GaAs(100)表面.结果表明,(NH_4)_2S_x中S钝化可以完全去除GaAs表面的氧化物.P_2S_5/(NH_4)_2S_x中P_2S_5对降低G_2A_5表面态密度,提高光致发光强度是有效的.钝化表面P氧化物存在对防止GaAs表面初期氧化起重要作用. 关键词:  相似文献   

6.
采用机械合金化法制备了p型赝三元(Sb2Te3-Bi2Te3-Sb2Se3)合金粉体,对其进行XRD分析表明Te,Bi,Sb,Se单质粉末,经100h球磨后实现了合金化;SEM分析表明所得机械合金化粉体材料颗粒均匀、细小,颗粒尺寸在10nm到100nm量级.使用这种粉体制备了冷压烧结块体样品,在室温下测量了温差电动势率(α)和电导率(σ),研究了烧结温度对材料热电性能的影响,结果表明在低于300℃的烧结温区,样品室温下的热电性能随烧结温度的升高不断提高,功率因子(α2σ)由未烧结样品的0.59μW cm-1K-2升高到在300℃下烧结样品的15.9μW cm-1K-2,这一结果对确定材料的最佳烧结温度具有重要意义. 关键词: 赝三元热电材料 机械合金化 冷压 烧结  相似文献   

7.
资剑  张开明 《物理学报》1990,39(10):1640-1646
本文用Keating模型计算了Si1-xGex(x=0—1)作衬底、沿(100)方向生长的(Si)n/(Ge)n(n=1—6)应力超晶格的几何结构,并讨论了衬底对超晶格生长的影响,计算结果发现对于(Si)n/(Ge)n超晶格,用适当的Si1-xGex作衬底有利于超晶格的生长。 关键词:  相似文献   

8.
We give a general SU(2) L × SU(2) R × U(1) EM sigma model with external sources, dynamical breaking and spontaneous vacuum symmetry breaking, and present the general formulation of the model. It is found that σ and π0 without electric charges have electromagnetic interaction effects coming from their internal structures. A general Lorentz transformation relative to external sources is derived, using the general Lorentz transformation and the four-dimensional current of nuclear matter of the ground state with J gauge = 0, we give the four-dimensional general relations between the different currents of nuclear matter systems with J gauge≠ 0 and those with J gauge = 0. The relation of the density’s coupling with external magnetic field is derived, which conforms well to dense nuclear matter in a strong magnetic field. We show different condensed effects in strong interaction about fermions and antifermions, and give the concrete scalar and pseudoscalar condensed expressions of σ0 and π0 bosons. About different dynamical breaking and spontaneous vacuum symmetry breaking, the concrete expressions of different mass spectra are obtained in field theory. This paper acquires the running spontaneous vacuum breaking value σ′0, and obtains the spontaneous vacuum breaking in terms of the running σ′0, which make nucleon, σ and π particles gain effective masses. We achieve both the effect of external sources and nonvanishing value of the condensed scalar and pseudoscalar paticles. It is deduced that the masses of nucleons, σ and π generally depend on different external sources. PACA numbers: 24.10.-i, 11.30.Qc  相似文献   

9.
利用半导体仿真工具Silvaco对p-i-n InP/In_(0.53)Ga_(0.47)As/InP近红外光探测器进行优化仿真.参考实际器件对红外探测器进行建模,并将其暗电流、光谱响应仿真结果与实验结果进行拟合,保证仿真结果的有效性.以减小探测器的暗电流为目的,优化其结构.针对探测器吸收层厚度和吸收层掺杂浓度对暗电流、光响应的影响进行研究,发现当吸收层厚度大于0.3μm后,暗电流不再上升,但光响应随着吸收层厚度的增加而增大;当吸收层掺杂浓度不断上升时,器件暗电流不断降低,当掺杂浓度上升到2×1017/cm3时,暗电流达到最低值.本文还研究了p-i-n型探测器的瞬态响应,探究了响应速度与反偏电压之间的关系,发现提高反偏电压能减小探测器响应时间.  相似文献   

10.
We calculate the masses and the pole residues of the heavy baryons Ω c 0(css) and Ω b (bss) with the QCD sum rules. The numerical values  GeV (or  GeV) and  GeV (or  GeV) are in good agreement with the experimental data.  相似文献   

11.
本文讨论奇奇核U(B)(6)×U(v)(12)×U(π)(4)动力学对称性的SO(6)极限情形.除计算能谱外,对体系的波函数、E(2)电磁跃迁几率和单粒子转移反应强度都进行了计算,并得到相应精确解.最后就198Au119188Ir111两核的实验能谱与理论计算值进行了比较并作了讨论.  相似文献   

12.
孙鹏  胡明  刘博  孙凤云  许路加 《物理学报》2011,60(5):57303-057303
采用双槽电化学腐蚀法制备多孔硅层,然后在多孔硅表面沉积形成金属电极,制备出M/PS/Si微结构.利用SEM分析多孔硅的表面形貌,通过测试其I-V特性分析M/PS/Si微结构的电学特性.结果表明:由Pt做电极形成的M/PS/Si结构,表现出非整流特性.M/PS/Si结构的I-V曲线由线性区和非线性区组成,多孔硅孔隙率越高的M/PS/Si结构的I-V特性曲线线性区越宽.由Cu做电极形成的M/PS/Si结构,表现出整流特性.其整流比随多孔硅孔隙率增加而减小. 关键词: M/PS/Si微结构 孔隙率 I-V特性')" href="#">I-V特性 欧姆接触  相似文献   

13.
This paper reports on the results of the investigation of the relation between the magnetic microstructure and ferromagnetic resonance (FMR) in ferromagnetic metal-insulator composites by using granular alloys (Co41Fe39B20) x (SiO2)1 − x and Co x (SiO2)1 − x as an example. A comparative analysis of the properties of FMR spectra and parameters of random magnetic anisotropy leads to correlations between these quantities. It has been found that the main mechanism that determines the FMR line width in the films under investigation is the exchange narrowing mechanism.  相似文献   

14.
SO(Bvπ)(6) limit of U(B)(6)×U(v)(12)×U(π)(4) dynamical symmetry in odd-odd nuclei is discussed Energy formula and wave functions are obtained,and exaetd expressions for E2 trasition rates and and one-nucleon transfer intensities are derived.The spectra of 198Au119 and 188Ir111 are compared with the exprimental values.  相似文献   

15.
The general method of projection operators is used to construct the noncanonical nonorthogonal basis of arbitrary irreducible representation of the group U (4) in the reduction
U (4) ? Up(2) × Un(2)
, where
Up(2)(Un(2))
is the transformation group in the proton (neutron) spin space. The completeness of this basis is proved and the matrices of the U (4) group generators and of the Bargmann-Moshinsky operator Ω in this basis are obtained. The matrix 6Ω6 exhibits a nondegenerate spectrum of the eigenvalues which may be used as the missing quantum number.  相似文献   

16.
直流电致发光(DCEL)器件在交流(AC)电压下的I-V,B-VB-I特性   总被引:2,自引:2,他引:0  
周连祥  张奇 《发光学报》1991,12(1):1-11
本文研究了DCEL器件在AC条件下的电流-电压(I-V),亮度-电压(B-V)和亮度-电流(B-I)特性.提出了在不同激发条件下的I-V,B-VB-I的经验公式.证明了DCEL器件在AC条件下按激发条件可分为三个负载区:容性负载区,电阻负载区和混合负载区.在不同的负载区DCEL器件呈现完全不同的光电特性.证明了在不同负载区工作时磷光粉层内电场分布和电子能量分布截然不同.分析了上述特性的原因.证明了老化和形成过程具有同样的物理机制,老化是形成过程的继续.  相似文献   

17.
利用射频磁控溅射的方法在SrTiO3(001) 基片上制备了(La0.7Sr0.3MnO3)m(BiFeO3)n超晶格结构.对所制备的超晶格结构进行了50—150℃温度范围内的电流-电压测试分析.结果表明,随着BiFeO3薄膜的厚度减小,温度的升高,(La0.7Sr0.3MnO3)m(BiFeO3)n超晶格结构的电流变大.进一步根据介质导电模型对(La0.7Sr0.3MnO3)m(BiFeO3)n超晶格结构的导电特性做了分析.在温度较低或者电场较弱时,所制备的(La0.7Sr0.3MnO3)m(BiFeO3)n超晶格结构表现为欧姆导电,而在高温,高电场的情况下,其导电行为由空间电荷限制电流机理主导. 关键词: 超晶格薄膜 多铁 空间电荷限制电流  相似文献   

18.
构造了具有Uqp(U3) Uqp(U2) Uqp(SO2)对称的双参数qp-形变二维相互作用玻色子模型(IBM),并给出了其能谱和跃迁矩阵元.结果表明,能谱和跃迁矩阵元极其敏感地依赖于第二个形变参数.  相似文献   

19.
假定HiggsYukawa耦合是宇称不守恒的唯一来源,通过取三代并引进超对称性,从而建立了一个SU(3)C×SU(2)I×U(1)Y复合轻子理论.  相似文献   

20.
Investigations of magnetic susceptibility (χ) of (3HgS)1–x (Al2S3) x (x = 0.5) crystals doped with manganese investigated by the Faraday method in the range of Т = 77–300 K and Н = 0.25–4 kOe demonstrate that peculiar magnetic properties can be due to the presence of clusters of the Mn–S–Mn–S type in these crystals. Based on the investigation of kinetic coefficients of the crystals performed for Т = 77–300 K and Н = 0.5–5 kOe, it is established that the crystals demonstrate conductivity of the n-type, and their electric conduction only very slightly depends on the temperature and shows a maximum, the Hall coefficient is independent of the temperature, while the temperature dependences of mobility exhibit a maximum. Using the concentration dependence of the effective electron mass at the Fermi level, the width of the forbidden band, the matrix element of interatomic interaction, and the effective mass on the conduction-band bottom are obtained. Based on investigations by optical methods, the presence of direct optical interband transitions in the crystals is established and the value of the optical forbidden band (at Т = 300 K) is determined.  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号