一维化学势调制的p波超导体中的拓扑量子相变

本文研究了一维公度势和非公度势调制下的p波超导量子线系统的拓扑相变.在公度势调制下,通过计算Z2拓扑不变量确定系统的相图,指出系统的拓扑相变强烈地依赖于调制参数α和相移δ.在非公度势调制下,以α=(√5-1)/2,δ=0为例,计算系统的低能激发谱、Z2拓扑不变量以及逆参与率等,发现p波配对强度△∈(0,0.33)时,系统存在拓扑非平庸超导相,拓扑平庸超导相和拓扑平庸局域相的转变.而当p波配对强度△>0.33时,系统存在拓扑非平庸超导相和拓扑平庸局域相的转变.     

无序度对一维长程关联无序系统中局域化-退局域化转变的影响

对长程幂律关联能量序列进行了修正,使其能体现出无序度在一维长程关联无序系统中的影响,并利用重正化群方法,计算了能反映该系统局域化-退局域化转变的Lyapunov指数.结果表明,在由于关联指数p的影响而在系统中出现的局域化向退局域化的转变中,无序度起着相反的作用.当关联指数p一定而无序度W增大时,系统中心能区范围内由于长程关联而引起的扩展态逐渐向局域态转变.当无序度W增大到某一临界值W_c时,系统中所有本征态均转变为局 关键词： 长程关联 Lyapunov指数 无序度 局域化-退局域化转变     

一类非公度体系的电子动力学

研究了格点势能V_n=λtanh［Acos(2πσn)］/tanhA,σ=(5-1)/2的一类非公度体系的电子动力学性质-分析了体系中不同相区内波函数的特征,发现延展态的波函数类似于Bloch波,在一定范围内体系中存在临界态-计算了自关联函数C(t)和均方位移d(t),分析了它们的长时行为,发现当体系各态均为延展态时,C(t)～t^-1,d(t)～t¹;当体系各态均为局域态时,C(t)～t⁰,d(t)～t^{0关键词：}     

链间耦合对聚乙炔多链体系中电子极化子再激发态的影响

采用拓展紧束缚Su-Schrieffer-Heeger(SSH)模型,研究了链间耦合对反式聚乙炔多链体系中电子极化子再激发态的晶格位形、净电荷密度、局域能级波函数和态密度的影响.结果发现:对于两条链体系,当链间耦合很小(t⊥≤0.01 e V)时,注入到系统中的电子只会在第一条链上诱发产生一个晶格缺陷,形成电子极化子再激发态,这和单链体系是一致,而第二条链仍是二聚化基态.随着链间耦合的增大,第一条链上缺陷的局域度减少而第二条链上的缺陷局域度相应增加,直至两条链上的位形相同;对于多条链(5条链和6条链)体系,当耦合很小(t⊥≤0.05 e V)时,电子极化子再激发态也只会存在于一条链上,当链间耦合较强时,极化子再激发态会在链间层次性地扩展开来,并不会出现多条链位形相同;从两条链的能级图上可以看到随着链间耦合t⊥的增大,体系的带隙不断的增大和电子态密度显示的是完全吻合的,体系的导电性减弱.通过分析两条链体系在t⊥=0 e V和t⊥=0.1 e V的能级态密度,发现链间耦合越强,则中间局域能级的态密度越小,最后没有中间局域态.     

由超辐射引起的迁移率边和重返局域化

研究了束缚在梯子形光晶格中的中性原子与高精度腔耦合的系统,发现由超辐射引起的准周期调制可以导致迁移率边和重返局域化现象的出现.在平均场近似下,超辐射现象可以引起两种不同频率的准周期调制,它们可以由腔场和泵浦场有效调节.在本文的观测范围内,当高频调制强度小于某一临界值时,系统随着低频调制强度的增加经历一次局域转变.通过数值求解分形维度、密度分布、平均参与率、平均逆参与率以及标度分析,证明了局域转变历经的临界相区存在迁移率边;当高频调制强度大于临界值时,随着低频调制强度的增强,系统依次经历完全扩展相-临界相-完全局域相-临界相-完全局域相,这是一个典型的重返局域化现象.最后给出了局域化相图.该研究结果为超辐射相变和重返局域化现象的研究建立了联系,也为重返局域化的研究搭建了新的平台.     

ZnS中Te等电子中心的时间分辨光谱研究

用时间分辨光谱研究了很大的Te组分范围内的ZnS_1-xTe_x（x=00 05—085）合金的发光动力学特性，结果表明：不同形态的Te等电子中心具有不同的辐射复 合寿命，从几个ns到几十个ns的范围内变化，当x＝015左右时，寿命达到最大值（约 40ns）.其物理机理源于不同的Te等电子中心具有不同的局域化特性.当Te组分较小时，等 电子中心从Te₁逐渐演变到Te₂，Te₃或Te₄ 时，相应发光寿命增加，表现出不断增强 的激子发光局域化特性；而当Te组分较大时，Te原子团变得较大，其局域势与基体原子势的 相互作用增强，等电子中心的局域化特性减弱，而基体价带扩展态特征变得明显起来，相应 发光寿命逐渐减小.还研究了激子束缚能随Te组分的变化以及发光强度随温度的变化关系， 所得结果进一步支持了时间分辨光谱研究所得到的结论. 关键词： ZnS 等电子中心 时间分辨光谱 局域态     

一类本征态迭加的高次压缩特性

对一类光子消灭算符aN的正交归一本征态的迭加态的振幅k次方压缩特性进行研究,结果表明一类aN的正交归一本征态的迭加态的振幅k次方压缩特性明显地区别于aN的正交归一本征态k次方压缩.无论N取奇数还是偶数迭加态均存在振幅k(k=Nt或Nt/2)次方压缩,当位相差δ=2mπ/t(m为整数)时迭加态不存在振幅k次方压缩;当δ=π时,只有N和t同时为奇数才有可能存在k次方压缩;当δ=π/2时,对应t≠4m的不同取值迭加态存在k次方压缩;因而参量的位相对振幅的k次方压缩起着关键性的作用.     

一类一维势场中电子态的研究

研究了在一维势场Ｖ_n＝λｃｏｓ（Ｑn＋ａｎ^ｖ）（０＜ｖ＜１）中运动的电子状态，计算了本征能量和本征态的局域化指数。对Ｑ＝２π／３，系统的能带由三个子能带构成。当λ小于２时，每个子带中有两个迁移率边界。研究了扩展态、局域态以及迁移率边界随参数λ，ν，α的变化。 关键词：     

两个玻色-爱因斯坦凝聚体间相互作用的数值研究

本文采用辛算法数值求解一维含时Gross-Pitaevskii(GP)方程.研究了存在陷俘势和撤掉陷俘势时两个凝聚体间的相互作用.发现当存在陷俘势时两个凝聚体间发生弹性碰撞;在零时刻撤掉陷俘势时两个凝聚体间发生干涉现象;当t=2时撤掉陷俘势两个凝聚体间发生了复杂现象.     

金刚石晶格上的对角无序与非对角无序非晶量子点

报道金刚石晶格上对角无序与非对角无序非晶量子点的理论研究，用简单的紧束缚哈密顿量描述模型的电子结构，用ｒｅｃｕｒｓｉｏｎ方法求解哈密顿方程，用边界条件对本征值的影响判断局域化，研究发现，带边为扩展态时，带宽的变化趋势与晶态量子点类似；带边为局域态时，尺寸超过某一临界长度后，带宽不变，但带边态密度随尺寸增大而增大。还研究了非晶量子点的介电函数虚部ε₂（?ω）。与扩展态对应的ε₂（?ω），对尺寸变化较敏感。与局域态对应的ε₂（?ω），当尺寸大于 关键词：     

Why localized and extended impurity band states can coexist and be separated

It has been assumed that in the impurity band metallic regime there exists an energy E_c below which all states are localized and above which all states are extended. This discontinuous model contradicts the results of recent experiments. Using the quantum theory of measurement I resolve these difficulties as my title indicates.     

具有p波超流的一维非公度晶格中迁移率边研究

研究了具有p波超流的一维非公度晶格中迁移率边的性质. 发现适当的p波超流可以增加体系中的迁移率边的数目, 并且通过多分形分析确定了迁移率边所在的位置.     

Half-filled Kondo lattice on the honeycomb lattice

The unique linear density of state around the Dirac points for the honeycomb lattice brings much novel features in strongly correlated models. Here we study the ground-state phase diagram of the Kondo lattice model on the honeycomb lattice at half-filling by using an extended mean-field theory. By treating magnetic interaction and Kondo screening on an equal footing, it is found that besides a trivial discontinuous first-order quantum phase transition between well-defined Kondo insulator and antiferromagnetic insulating state, there can exist a wide coexistence region with both Kondo screening and antiferromagnetic orders in the intermediate coupling regime. In addition, the stability of Kondo insulator requires a minimum strength of the Kondo coupling. These features are attributed to the linear density of state, which are absent in the square lattice. Furthermore, fluctuation effect beyond the mean-field decoupling is analyzed and the corresponding antiferromagnetic spin-density-wave transition falls into the O(3) universal class. Comparatively, we also discuss the Kondo necklace and the Kane-Mele-Kondo (KMK) lattice models on the same lattice. Interestingly, it is found that the topological insulating state is unstable to the usual antiferromagnetic ordered states at half-filling for the KMK model. The present work may be helpful for further study on the interplay between conduction electrons and the densely localized spins on the honeycomb lattice.     

Many-body ground state localization and coexistence of localized and extended states in an interacting quasiperiodic system

We study the localization problem of one-dimensional interacting spinless fermions in anincommensurate optical lattice, which changes from an extended phase to a non-ergoicmany-body localized phase by increasing the strength of the incommensurate potential. Weidentify that there exists an intermediate regime before the system enters the many-bodylocalized phase, in which both the localized and extended many-body states coexist, thusthe system is divided into three different phases, which can be characterized bynormalized participation ratios of the many-body eigenstates and distributions of naturalorbitals of the corresponding one-particle density matrix. This is very different from itsnoninteracting limit, in which all eigenstates undergo a delocalization-localizationtransition when the strength of the incommensurate potential exceeds a critical value.     

Critical strength for ideal incommensurate structures

A concise method is developed to show the following in one dimension: (a) If there is a sharp metal-insulator transition in an ideal sinusoidal incommensurate structure then $\text{W}\text{V = 2}$. (b) There is an infinite dc conductivity of electrons in an ideal incommensurate structure for T = 0 if $\text{W}\text{V < 2}$. (c) Addition of impurities which scatter between all pairs of k values may lead to a finite conductivity for $\text{W}\text{V < 2}$. (It tends to zero as L → ∞). The concept of duality used by Aubry is then extended to the general problem of localization and the breakdown of extended states is illustrated.     

Composition and electric field effects on the transport properties of Bi doped chalcogenide glasses thin films

The temperature dependence of the DC electrical conductivity σ_DC was measured in the temperature range from 300–500 K. It was found that there are double activation energies, E_σ, for Ge₂₀Se_80−xBi_x (x=0, 2.5 and 5 at%) films, while there is single activation energy for Ge₂₀Se_72.5Bi_7.5. when incorporation of Bi=7.5 at%, the pre-exponential value σ₀ decreases by about six order of magnitude, the activation energy in the extended states E_σ decreases from 0.96 to 0.09 eV. Also the effect of applied electric field was studied and observed that, activation energy in high temperature region increases with increasing electric field; this behavior can be understood assuming that the contribution to the conductivity activation process is due to conduction in the extended states and also due to hopping in the localized states. With the increasing electric field, as former process, which is having high activation energy, becomes more predominant due to the dumping of the carriers in the extended states, the effective activation energy of the system increases, in spite of the fact that the activation energy of the extended states conduction may remain constant. Finally, the electrical data suggests that the addition of bismuth produces localized states near the conduction band edge so that the electrical transport is due to hopping of electrons after being excited into localized states at the conduction band edge.     

Space as a Low-Temperature Regime of Graphs

I define a statistical model of graphs in which 2-dimensional spaces arise at low temperature. The configurations are given by graphs with a fixed number of edges and the Hamiltonian is a simple, local function of the graphs. Simulations show that there is a transition between a low-temperature regime in which the graphs form triangulations of 2-dimensional surfaces and a high-temperature regime, where the surfaces disappear. I use data for the specific heat and other observables to discuss whether this is a phase transition. The surface states are analyzed with regard to topology and defects.     

Extended State to Localization in Random Aperiodic Chains

The electronic states in Thus-Morse chain (TMC) and generalized Fibonacci chain (GFC) are studied by solving eigenequation and using transfer matrix method. Two model Hamiltonians are studied. One contains the nearest neighbor (n.n.) hopping terms only and the other has additionally next nearest neighbor (n.n.n.) hopping terms. Based on the transfer matrix method, a criterion of transition from the extended to the localized states is suggested for GFC and TMC. The numerical calculation shows the existence of both extended and localized states in pure aperiodic system. A random potential is introduced to the diagonal term of the Hamiltonian and then the extended states are always changed to be localized. The exponents related to the localization length as a function of randomness are calculated. For different kinds of aperiodic chain, the critical value of randomness for the transition from extended to the localized states are found to be zero, consistent with the case of ordinary one-dimensional systems.