High-performance nonenzymatic electrochemical glucose biosensor based on AgNP-decorated MoS2 microflowers

A facile hydrothermal route was used to synthesize silver nanoparticle (AgNP)-decorated microflower molybdenum disulfide (MoS₂-MF) for bio-electrochemical platform fabrication to detect nonenzymatic glucose concentration. The morphologies of the materials were studied by scanning electron microscopy, and their structural characteristics were analyzed by X-ray diffractometry and energy-dispersive X-ray spectroscopy. The electrochemical characteristics of the AgNPs/MoS₂-MF/PtE biosensor were studied by cyclic voltammetry. The obtained data indicated that the developed nonenzymatic glucose sensor has a large linear response between 1.0 and 15.0 mM, a limit of detection of as low as 1.0 mM, and a sensitivity of 46.5 μA nM⁻¹ cm⁻². The biosensor also displayed outstanding selectivity, stability, reproducibility, and repeatability. Additionally, the AgNPs/MoS₂-MF/PtE biosensor was utilized to detect glucose concentration in real sample and showed practical application potential for glucose detection.     

Growth of monolayer and bilayer MoS2 through the solution precursor for high-performance photodetectors

Various studies suggest that the performances of TMDs are largely thickness dependent. In this paper, we develop a chemical vapor deposition method to synthesis monolayer and bilayer MoS₂ flakes with a solution precursor. The MoS₂ phototransistors were prepared to investigate their optoelectronic performance. The MoS₂ photodetectors exhibit high detectivity of 2.44 × 10¹¹ and a fast response/recovery time of 97 ms/291 ms. The photoresponsivity of bilayer MoS₂ flakes was found up to 7160 A W⁻¹. Our research will pave a pathway to control the layer numbers of other TMDs nanostructures, expand the application of high performance 2D materials.     

Performance enhancement of multilayer MoS2 phototransistors via photoresist encapsulation

We propose the encapsulation of bottom-gate multilayer MoS₂ phototransistors with an AZ®5214E photoresist as an effective device design to enhance the optoelectronic properties of the phototransistors. The photoresist-encapsulated MoS₂ phototransistors, based on mechanically exfoliated MoS₂ crystals, exhibited an improved device performance. After the photoresist encapsulation, the responsivity and detectivity of the device increased by seven-fold to 3.2 × 10³ A W⁻¹ and by five-fold to 2.3 × 10¹² Jones, respectively, under a 650-nm laser with an incident power density of 2.1 mW cm⁻². We attribute the observed enhancement in the phototransistor performance to the enhanced electrical properties owing to the n-type doping via photoresist encapsulation. These results demonstrate that MoS₂ phototransistors can achieve high performance without complicated device architecture and process, and thus, photoresist encapsulation presents an effective method for developing high-performance two-dimensional optoelectronic devices.     

Ultrasonication-assisted liquid-phase exfoliation enhances photoelectrochemical performance in α-Fe2O3/MoS2 photoanode

This study successfully manufactured a p-n heterojunction hematite (α-Fe₂O₃) structure with molybdenum disulfide (MoS₂) to address the electron–hole transfer problems of conventional hematite to enhance photoelectrochemical (PEC) performance. The two-dimensional MoS₂ nanosheets were prepared through ultrasonication-assisted liquid-phase exfoliation, after which the concentration, number of layers, and thickness parameters of the MoS₂ nanosheets were respectively estimated by UV–vis, HRTEM and AFM analysis to be 0.37 mg/ml, 10–12 layers and around 6 nm. The effect of heterojunction α-Fe₂O₃/MoS₂ and the role of the ultrasonication process were investigated by the optimized concentration of MoS₂ in the forms of bulk and nanosheet on the surface of the α-Fe₂O₃ electrode while measuring the PEC performance. The best photocurrent density of the α-Fe₂O₃/MoS₂ photoanode was obtained at 1.52 and 0.86 mA.cm⁻² with good stability at 0.6 V vs. Ag/AgCl under 100 mW/cm² (AM 1.5) illumination from the back- and front-sides of α-Fe₂O₃/MoS₂; these values are 13.82 and 7.85-times higher than those of pure α-Fe₂O₃, respectively. The results of electrochemical impedance spectroscopy (EIS) and Mott-Schottky analysis showed increased donor concentration (2.6-fold) and decreased flat band potential (by 20%). Moreover, the results of IPCE, ABPE, and OCP analyses also supported the enhanced PEC performance of α-Fe₂O₃/MoS₂ through the formation of a p–n heterojunction, leading to a facile electron–hole transfer.     

Novel molybdenum disulfide nanosheets–decorated polyaniline: Preparation,characterization and enhanced electrocatalytic activity for hydrogen evolution reaction

Novel molybdenum disulfide nanosheets–decorated polyaniline (MoS₂/PANI) was synthesized and investigated as an efficient catalyst for hydrogen evolution reaction (HER). Compared with MoS₂, MoS₂/PANI nanocomposites exhibited higher catalytic activity and lower Tafel slope for HER in H₂SO₄ solution. The amount of 19 wt% PANI for coupling with MoS₂ resulted in a high current density of 80 mA cm⁻² at 400 mV (vs. RHE). In addition, the optimal MoS₂/PANI nanocomposite showed impressive long-term stability even after 500 cycles. The enhanced catalytic activity of MoS₂/PANI nanocomposites was primarily ascribed to the effective electron transport channels of PANI and the increase of electrochemically accessible surface area in composite materials, which was advantageous to facilitate the charge transfer at catalyst/electrolyte interface.     

Characteristics of a type-II n-MoS2/p-Ge van der Waals heterojunction

A few-atomic-layer molybdenum disulfide (MoS₂) film on Si/SiO₂ substrates grown by metal-organic chemical vapor deposition was investigated. The few-atomic-layer MoS₂ film was subsequently transferred onto a (100) p-Ge substrate to build a van der Waals n-p heterojunction. The as-grown few-atomic-layer MoS₂ film and the MoS₂/Ge heterostructure were characterized atomic force microscopy, spectroscopic ellipsometry, high-resolution scanning transmission electron microscopy, Raman spectroscopy analyses, photoluminescence (PL) measurements at room temperature (RT, 300 K), and type-II band alignment of the heterostructure determined by ultraviolet photoelectron spectroscopy. The RT-PL measurements showed dominant peaks at 1.96 and 1.8 eV for the as-grown MoS₂ and red-shifted PL peaks for that transferred onto Ge. We examined the electrical characteristics of the few-atomic-layer MoS₂ by forming a type-II band alignment van der Waals heterojunction with a highly doped p-Ge. The heterojunction solar cell exhibited an open-circuit voltage of 0.15 V and a short-circuit current density of 45.26 μA/cm². The external quantum efficiency measurements showed a spectral response up to approximately 500 nm owing to the absorption by the few-atomic-layer MoS₂ film.     

One-step chemically vapor deposited hybrid 1T-MoS2/2H-MoS2 heterostructures towards methylene blue photodegradation

The photocatalytic degradation of methylene blue is a straightforward and cost-effective solution for water decontamination. Although many materials have been reported so far for this purpose, the proposed solutions inflicted high fabrication costs and low efficiencies. Here, we report on the synthesis of tetragonal (1T) and hexagonal (2H) mixed molybdenum disulfide (MoS₂) heterostructures for an improved photocatalytic degradation efficiency by means of a single-step chemical vapor deposition (CVD) technique. We demonstrate that the 1T-MoS₂/2H-MoS₂ heterostructures exhibited a narrow bandgap ∼ 1.7 eV, and a very low reflectance (<5%) under visible-light, owing to their particular vertical micro-flower-like structure. We exfoliated the CVD-synthesised 1T-MoS₂/2H-MoS₂ films to assess their photodegradation properties towards the standard methylene blue dye. Our results showed that the photo-degradation rate-constant of the 1T-MoS₂/2H-MoS₂ heterostructures is much greater under UV excitation (i.e., 12.5 × 10⁻³ min⁻¹) than under visible light illumination (i.e., 9.2 × 10⁻³ min⁻¹). Our findings suggested that the intermixing of the conductive 1T-MoS₂ with the semi-conducting 2H-MoS₂ phases favors the photogeneration of electron-hole pairs. More importantly, it promotes a higher efficient charge transfer, which accelerates the methylene blue photodegradation process.     

Layer‐dependent resonant Raman scattering of a few layer MoS2

We report resonant Raman scattering of MoS₂ layers comprising of single, bi, four and seven layers, showing a strong dependence on the layer thickness. Indirect band gap MoS₂ in bulk becomes a direct band gap semiconductor in the monolayer form. New Raman modes are seen in the spectra of single‐ and few‐layer MoS₂ samples which are absent in the bulk. The Raman mode at ~230 cm⁻¹ appears for two, four and seven layers. This mode has been attributed to the longitudinal acoustic phonon branch at the M point (LA(M)) of the Brillouin zone. The mode at ~179 cm⁻¹ shows asymmetric character for a few‐layer sample. The asymmetry is explained by the dispersion of the LA(M) branch along the Γ‐M direction. The most intense spectral region near 455 cm⁻¹ shows a layer‐dependent variation of peak positions and relative intensities. The high energy region between 510 and 645 cm⁻¹ is marked by the appearance of prominent new Raman bands, varying in intensity with layer numbers. Resonant Raman spectroscopy thus serves as a promising non invasive technique to accurately estimate the thickness of MoS₂ layers down to a few atoms thick. Copyright © 2012 John Wiley & Sons, Ltd.     

Optical Nonlinearity of Emerging ZrS2 and HfS2 Semiconductors

Compatible with existing processing technology, chemical vapor deposition method is used to synthesize ZrS₂ and HfS₂ films a a large scale. The nonlinear optical properties are characterized by Z-scan measurement with femtosecond pulses at 800 nm. The results show that saturable absorption happens in ZrS₂ owing to the larger ground state absorption than the excited state absorption, while reverse saturable absorption appears in HfS₂ due to the two-photon absorption. The figure of merit values of ZrS₂ (≈4.30 ± 0.12 × 10⁻¹⁵ esu cm) and HfS₂ (≈6.0 ± 1.4 × 10⁻¹⁵ esu cm) are much larger than those of MoS₂ and graphene in ultrafast nonlinear optical performance at the wavelength of 800 nm.     

Significant Enhancement of Hydrogen Production in MoS2/Cu2ZnSnS4 Nanoparticles

Hydrogen produced from water splitting is a renewable and clean energy source. Great efforts have been paid in searching for inexpensive and highly efficient photocatalysts. Here, significant enhancement of hydrogen production has been achieved by introducing ≈1 mol% of MoS₂ to Cu₂ZnSnS₄ nanoparticles. The MoS₂/Cu₂ZnSnS₄ nanoparticles showed a hydrogen evolution rate of ≈0.47 mmol g⁻¹ h⁻¹ in the presence of sacrificial agents, which is 7.8 times that of Cu₂ZnSnS₄ nanoparticles (0.06 mmol g⁻¹ h⁻¹). In addition, the MoS₂/Cu₂ZnSnS₄ nanoparticles exhibited high stability, and only ≈3% of catalytic activity was lost after a long time irradiation (72 h). Microstructure investigation on the MoS₂/Cu₂ZnSnS₄ nanoparticles reveals that the intimate contact between the nanostructured MoS₂ and Cu₂ZnSnS₄ nanoparticles provides an effective one‐way expressway for photogenerated electrons transferring from the conduction band of Cu₂ZnSnS₄ to MoS₂, thus boosting the lifetime of charge carriers, as well as reducing the recombination rate of electrons and holes.     

Ultrasound-assisted conversion of tannic acid to gallic acid as a strategy to obtain value-added products

In this work, ultrasound was applied for the conversion of tannic acid into gallic acid using only diluted H₂O₂ as reagent. Experiments were carried out using several types of ultrasonic horns operating at 20 kHz (VC750W processor). The following experimental conditions were evaluated: H₂O₂ concentration (0.2 to 8.5 mol L⁻¹), horn type (10 to 25 mm of diameter), ultrasound amplitude (20 to 70%), sonication time (10 to 45 min), tannic acid concentration (170 to 1360 mg L⁻¹), and reaction temperature (50 to 90 °C). Gallic acid production was monitored with ultra-performance liquid chromatography with high-resolution time-of-flight mass spectrometry (UPLC-ToF-MS). The isolated gallic acid was confirmed with nuclear magnetic resonance (¹H and ¹³C NMR). It is important to emphasize that this study was developed as a proof of concept to demonstrate the potential of ultrasound for tannic acid conversion into gallic acid using just diluted H₂O₂. Under selected conditions gallic acid production yield was 128 ± 4 mg g⁻¹ of initial tannic acid (using 170 mg L⁻¹ of tannic acid as starting material). Reaction time was set as 30 min, which was carried out using 1 mol L⁻¹ H₂O₂ and ultrasound amplitude of 50% at 90 °C. At silent conditions (mechanical stirring, from 100 to 1000 rpm), gallic acid production was halved (less than 78 ± 4 mg g⁻¹ of initial tannic acid).     

A study of electrical enhancement of polycrystalline MgZnO/ZnO bi-layer thin film transistors dependence on the thickness of ZnO layer

A polycrystalline MgZnO/ZnO bi-layer was deposited by using a RF co-magnetron sputtering method and the MgZnO/ZnO bi-layer TFTs were fabricated on the thermally oxidized silicon substrate. The performances with varying the thickness of ZnO layer were investigated. In this result, the MgZnO/ZnO bi-layer TFTs which the content of Mg is about 2.5 at % have shown the enhancement characteristics of high mobility (6.77–7.56 cm² V⁻¹ s⁻¹) and low sub-threshold swing (0.57–0.69 V decade⁻¹) compare of the ZnO single layer TFT (μ_FE = 5.38 cm² V⁻¹ s⁻¹; S.S. = 0.86 V decade⁻¹). Moreover, in the results of the positive bias stress, the ΔV_on shift (4.8 V) of MgZnO/ZnO bi-layer is the 2 V lower than ZnO single layer TFT (ΔV_on = 6.1 V). It reveals that the stability of the MgZnO/ZnO bi-layer TFT enhanced compared to that of the ZnO single layer TFT.     

Reactions of hydrazine with the amidogen radical and atomic hydrogen

The rate coefficient k₁ for NH₂ + N₂H₄ was measured to be (5.4 ± 0.4) × 10⁻¹⁴ cm³ molecule⁻¹ s⁻¹ at 296 K. NH₂ was generated by pulsed laser photolysis of NH₃ at 193 nm, and monitored as a function of time by pulsed laser-induced fluorescence excited at 570.3 nm under pseudo-first order conditions in the presence of excess N₂H₄ in an Ar bath gas. This reaction was also investigated computationally, with geometries and scaled frequencies obtained with M06-2X/6-311+G(2df,2p) theory, and single-point energies from CCSD(T)-F12b/cc-pVTZ-F12 theory, plus a term to correct approximately for electron correlation through CCSDT(Q). Three connected transition states are involved and rate constants were obtained via Multistructural Improved Canonical Variational Transition State Theory with Small Curvature Tunneling. Combination of experiment and theory leads to a recommended rate coefficient for hydrogen abstraction of k₁ = 6.3 × 10⁻²³ T^3.44 exp(+289 K/T) cm³ molecule⁻¹ s⁻¹. The minor channel for H + N₂H₄ forming NH₂ + NH₃ was characterized computationally as well, to yield 5.0 × 10⁻¹⁹ T^2.07 exp(-4032 K/T) cm³ molecule⁻¹ s⁻¹. These results are compared to several discordant prior estimates, and are employed in an overall mechanism to compare with measurements of half-lives of hydrazine in a shock tube.     

The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes

Schottky diodes still attract researchers as they are used in various device applications. This study provides I–V characteristics of Ti/n-GaAs (80–300 K). Higher barrier height (Φ_B0) values were obtained for higher temperatures, whereas the ideality factor exhibited the opposite behavior. This was associated with a barrier inhomogeneity at the Ti/GaAs interface, which has a Gaussian distribution (GD). The mean barrier height values calculated from the modified Richardson and Φ_B0 - q/2 kT plots were found to be 0.584 eV and 0.575 eV in the temperature range of 80–160 K. They were found as 1.041 eV and 1.033 eV between 180 K and 300 K, respectively. The modified Richardson constant value, on the other hand, was calculated as 22.06 A cm⁻² K⁻² (80–160 K) and 13.167 A cm⁻² K⁻² (180–300 K). These values are higher than the theoretical value for n-GaAs, which is 8.16 A cm⁻² K⁻². This difference may stem from intense inhomogeneity at the Ti/n-GaAs interface.     

Facile hydrothermal synthesis of ultrahigh-aspect-ratio V2O5 nanowires for high-performance supercapacitors

Ultrahigh-aspect-ratio V₂O₅ nanowires were successfully prepared using [VO(O₂)₂(OH₂)]⁻ as the starting material by a template-free hydrothermal route without the addition of organic surfactant or inorganic ions. The prepared samples were characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Brunauer–Emmet–Teller (BET), cyclic voltammetry (CV) and galvanostatic charge–discharge (GCD). The results revealed that the peroxovanadium (V) complexes can be easily transformed to V₂O₅ nanowires by this hydrothermal route. The uniform nanowires were with width about 50 nm and length about dozens of micron. The BET analysis showed the V₂O₅ nanowires had a high specific surface area of 25.6 m² g⁻¹. The synthesized V₂O₅ nanowires performed a high capacitance of 351 F g⁻¹ when used as supercapacitor electrode in 1 mol L⁻¹ LiNO₃.     

Photoluminescence properties of Eu3+-doped Cd1−x Zn x S quantum dots

Eu³⁺-doped Cd_1−x Zn _x S (0 ≤ x ≤ 0.5) quantum dots (QDs) have been synthesized using wet chemical precipitation method. X-ray diffraction and transmission electron microscope have been used for the crystallographic and morphological characterization of synthesized nanomaterials. In order to understand the spectral characteristics of doped QDs, N₂-laser induced time resolved spectra have been recorded. Excited state lifetime values for dichromatic emission (red and violet) attributed to ⁵D₀ → ⁷F_J (J = 1, 2) transitions of Eu³⁺ and host lattice transitions have been calculated from the recorded luminescence decay curves. Decay time dependence on the dopant concentration (0.01–10 at. wt% of Cd²⁺) has been studied in detail.     

Green sonochemical synthesis and fabrication of cubic MnFe2O4 electrocatalyst decorated carbon nitride nanohybrid for neurotransmitter detection in serum samples

The binary nanomaterials and graphitic carbon based hybrid has been developed as an important porous nanomaterial for fabricating electrode with applications in non-enzymatic (bio) sensors. We report a fast synthesis of bimetal oxide particles of nano-sized manganese ferrite (MnFe₂O₄) decorated on graphitic carbon nitride (GCN) via a high-intensity ultrasonic irradiation method for C (30 kHz and 70 W/cm²). The nanocomposites were analyzed by powder X-ray diffraction, XPS, EDS, TEM to ascertain the effects of synthesis parameters on structure, and morphology. The MnFe₂O₄/GCN modified electrode demonstrated superior electrocatalytic activity toward the neurotransmitter (5-hydroxytryptamine) detection with a high peak intensity at +0.21 V. The appealing application of the MnFe₂O₄/GCN/GCE as neurotransmitter sensors is presented and a possible sensing mechanism is analyzed. The constructed electrochemical sensor for the detection of 5-hydroxytryptamine (STN) showed a wide working range (0.1–522.6 μM), high sensitivity (19.377 μA μM⁻¹ cm⁻²), and nano-molar detection limit (3.1 nM). Moreover, it is worth noting that the MnFe₂O₄/GCN not only enhanced activity and also promoted the electron transfer rate towards STN detection. The proposed sensor was analyzed for its real-time applications to the detection of STN in rat brain serum, and human blood serum in good satisfactory results was obtained. The results showed promising reproducibility, repeatability, and high stability for neurotransmitter detection in biological samples.     

Effect of alumina addition on the microstructure and grain boundary resistance of magnesia partially-stabilized zirconia

The electrical properties of 9 mol% MgO–ZrO₂ (Mg-PSZ) with 1 mol% Al₂O₃ and the mechanisms for electrical degradation were investigated using structural, morphological, and electrochemical analyses. The addition of Al₂O₃ caused an increase in both the monoclinic and the Mg-rich phases at the grain boundaries in the Mg-PSZ. Coarse grains larger than 20 μm and an intergranular layer composed of the Mg-rich phase were identified in a specimen sintered at 1600 °C. This specimen exhibited a minimum of ionic conductivity (4.98 × 10⁻⁴ S cm⁻¹ at 700 °C) due to the grain boundary resistance (245 Ω cm²), which dominated the overall resistance. A similar trend was observed over the entire temperature range (600–1500 °C). An intergranular siliceous impurity (SiO₂) was present in conjunction with the Mg-rich phase. This impurity and the Mg-rich phase acted as a barrier layer for oxygen ion diffusion. The presence of the intergranular phases (i.e. the monoclinic and Mg-rich phases) contributed to the degradation of the ionic conductivity in Mg-PSZ with an Al₂O₃ addition.     

Effects of gas saturation and sparging on sonochemical oxidation activity in open and closed systems,part II: NO2−/NO3− generation and a brief critical review

The sonochemical generation of NO₂⁻ and NO₃⁻ is considered to be one of the reasons for the low sonochemical oxidation activity in the presence of N₂ in the liquid phase. In this study, the generation characteristics of NO₂⁻ and NO₃⁻ were investigated using the same 28 kHz sonoreactor and the 12 gas conditions used in Part I of this study. Three gas modes, saturation/closed, saturation/open, and sparging/closed, were applied. N₂:Ar (25:75), N₂:Ar (50:50), and O₂:N₂ (25:75) in the saturation/closed mode generated the three highest values of NO₂⁻ and NO₃⁻. Ar and O₂ were vital for generating relatively large concentrations of NO₂⁻ and NO₃⁻. The absorption of N₂ from the air resulted in high generation of NO₂⁻ and NO₃⁻ for Ar 100 % and Ar/O₂ mixtures under the saturation/open mode. In addition, gas sparging enhanced the generation of NO₂⁻ and NO₃⁻ for N₂:Ar (25:75), O₂:N₂ (25:75), and N₂ significantly because of the change in the sonochemically active zone and the increase in the mixing intensity in the liquid phase, as discussed in Part I. The ratio of NO₃⁻ to NO₂⁻ was calculated using their final concentrations, and a ratio higher than 1 was obtained for the condition of Ar 100 %, Ar/O₂ mixtures, and O₂ 100 %, wherein a relatively high oxidation activity was detected. From a summary of the results and findings of previous studies, it was revealed that the observations of NO₂⁻ + NO₃⁻ could be more appropriate for investigating the NO₂⁻ and NO₃⁻ generation characteristics. In addition, H₂O₂/NO₂⁻/NO₃⁻ related activity rather than H₂O₂ activity was suggested to quantify the OH radical activity more appropriately in the presence of N₂.     

Potential-induced sonoelectrochemical graphene nanosheets with vacancies as hydrogen peroxide reduction catalysts and sensors

Defective graphene nanosheets (dGN_4V) with 5-9, 5-8-5, and point defects were synthesised by a sonoelectrochemical method, where a potential of 4 V (vs. Ag/AgCl) was applied to drive the rapid intercalation of phosphate ions between the layers of the graphite foil as a working electrode. In addition to these vacancies, double vacancy defects were also created when the applied potential was increased to 8 V (dGN_8V). The defect density of dGN_8V (2406 μm⁻²) was higher than that of dGN_4V (1786 μm⁻²). Additionally, dGN_8V and dGN_4V were applied as catalysts for the hydrogen peroxide reduction reaction (HPRR). The mass activity of dGN_8V (1.31 × 10⁻² mA·μg⁻¹) was greater than that of dGN_4V (1.17 × 10⁻² mA·μg⁻¹) because of its high electrochemical surface area (ECSA, 1250.89 m²·g⁻¹) and defect density (N_D, 2406 μm⁻²), leading to low charge transfer resistance on the electrocatalytic interface. The ECSA and N_D of dGN_4V were 502.7 m²·g⁻¹ and 1786 μm⁻², respectively. Apart from its remarkable HPRR activity, the cost-effective dGN_8V catalyst also showed potential as an amperometric sensor for the determination of H₂O₂.