基于聚多巴胺/氧化锌复合阴极缓冲层的倒置聚合物太阳能电池的研究

利用多巴胺氧化自聚合形成聚多巴胺(PDA)与ZnO结合形成PDA/ZnO复合阴极缓冲层,制备了以P3HT:PC_(61)BM为活性层的倒置结构聚合物太阳能电池,通过改变PDA的自聚合时间来分析复合阴极缓冲层对器件性能的影响.实验发现,随着PDA的自聚合时间的增加,聚合物太阳能电池的光电转换效率先增大后减小,当自聚合时间为10 min时,相应器件光伏性能达到最优值,其开路电压V_(OC)为0.66 V,短路电流密度J_(SC)为9.70 mA/cm~2,填充因子FF为68.06%,光电转换效率PCE为4.35%.器件性能改善的原因是由于PDA/ZnO复合阴极缓冲层减小了ZnO与ITO之间的接触电阻,同时PDA中存在大量的氨基有利于倒置太阳能电池阴极对电子的收集.     

Cu_2O/ZnO氧化物异质结太阳电池的研究进展

介绍了近年来低成本Cu_2O/ZnO氧化物异质结太阳电池方面的研究进展.应用于光伏器件的吸收层材料Cu_2O是直接带隙半导体材料,天然呈现p型;其原材料丰富,且对环境友好.Cu_2O/ZnO异质结太阳电池结构主要有平面结构和纳米线/纳米棒结构.纳米结构的Cu_2O太阳电池提高了器件的电荷收集作用;通过热氧化Cu片技术获得的具有大晶粒尺寸平面结构Cu_2O吸收层在Cu_2O/ZnO太阳电池应用中展现出了高质量特性.界面缓冲层(如i-ZnO,a-ZTO,Ga_2O_3等)和背表面电场(如p~+-Cu_2O层等)可有效地提高界面处能级匹配和增强载流子输运.10 nm厚度的Ga_2O_3提供了近理想的导带失配,减少了界面复合;Ga_2O_3非常适合作为界面层,其能够有效地提高Cu_2O基太阳电池的开路电压V_(oc)(可达到1.2 V)和光电转换效率.p~+-Cu_2O(如Cu_2O:N和Cu_2O:Na)能够减少器件中背接触电阻和形成电子反射的背表面电场(抑制电子在界面处复合).利用p型Na掺杂Cu_2O(Cu_2O:Na)作为吸收层和Zn_(1-x)Ge_x-O作为n型缓冲层,Cu_2O异质结太阳电池(器件结构:MgF_2/ZnO:Al/Zn_(0.38)Ge_(0.62)-O/Cu_2O:Na)光电转换效率达8.1%.氧化物异质结太阳电池在光伏领域展现出极大的发展潜力.     

Improved efficiency and stability of perovskite solar cells with molecular ameliorating of ZnO nanorod/perovskite interface and Mg-doping ZnO

Despite the advanced efficiency of perovskite solar cells(PSCs),electron transportation is still a pending issue.Here the polymer polyvinylpyrrolidone(PVP)is used to enhance the electron injection,which is thanks to the passivation of the defects at the interface between the ZnO electron transporting layer(ETL)and the perovskite.The application of the PVP layer inhibits the device degradation,and 80%of the primary efficiency is kept after 30 d storage in air condition.Additionally,the efficiency of the device is further enhanced by improving the conductivity and crystallinity of the ZnO ETL via Magnesium(Mg)doping in the ZnO nanorods(ZnO NRs).Moreover,the preparation parameters of the ZnO NRs are optimized.By employing the high-crystallinity ZnO ETL and the PVP layer,the power conversion efficiency(PCE)of the champion device is increased from 16.29%to 19.63%.These results demonstrate the advantages of combining mesoscale manipulation with interface modification and doping together.     

Enhancing the performance of poly(3-hexylthiophene)/ZnO nanorod arrays based hybrid solar cells through incorporation of a third component

Sparse ZnO nanorod arrays(NRAs)are fabricated on transparent conducting oxide coated glass substrates by using a modified liquid phase epitaxial growth method.By adjusting the polymer concentrations and the spin-coating parameters,full infiltration of poly(3-hexylthiophene)(P3HT)into the as-prepared ZnO NRAs is achieved at 130°C in vacuum.A third component is incorporated into the P3HT/ZnO NRAs ordered bulk heterojunctions(BHJs)either through ZnO surface modification with N719dye or CdS shell layer or by inclusion of a fullerene derivative into the P3HT matrix.Experimental results indicate that performances of the hybrid solar cells are improved greatly with the incorporation of a third component.However,the working principles of these third components differ from one another,according to morphology,structure,optical property,charge transfer and interfacial properties of the composite structures.An ideal device architecture for hybrid solar cells based on P3HT/ZnO NRAs ordered BHJs is proposed,which can be used as a guidance to further increase the power conversion efficiency of such solar cells.     

ZnO电子传输层对于反型结构聚合物太阳电池光浴效应的影响

采用金属氧化物电子传输层(ETL)的聚合物光伏器件在制备完成之初通常性能表现低下, J-V曲线呈异常“S”形. 当器件受白光持续照射后, 该不良状况会逐渐好转, 此过程称为光浴(light-soaking). 光浴现象普遍被认为是ETL界面问题所致. 从器件结构着手, 研究了ZnO 纳米颗粒ETL相邻的两个界面在光浴问题上的作用. 制备了功能层相同的(电极除外)正型、反型器件及复合ETL结构器件, 发现光浴现象仅出现于包含ZnO/ITO界面的反型器件中, 证明该界面是导致光浴现象的主要原因. 分析认为: ZnO颗粒表面O₂吸附形成的电子陷阱增加了ITO/ZnO势垒厚度, 使得光生电子无法逾越而成为空间电荷积累, 从而导致器件初始性能不佳. 器件经光照后, ETL内部受激而生的空穴电子对填补了ZnO缺陷, 提升了ETL的电荷选择性并减小了界面势垒厚度, 被束缚的光生电子得以隧穿至ITO电极, 反型器件性能最终得以改善.     

Improved performance of a crystalline silicon solar cell based on ZnO/PS anti-reflection coating layers

A porous silicon (PS) layer was prepared by photoelectrochemical etching (PECE), and a zinc oxide (ZnO) film was deposited on a PS layer using a radio frequency (RF) sputtering system. The surface morphology of the PS and ZnO/PS layers was characterised using scanning electron microscopy (SEM). Nano-pores were produced in the PS layer with an average diameter of 5.7 nm, which increased the porosity to 91%. X-ray diffraction (XRD) of the ZnO/PS layers shows that the ZnO film is highly oriented along the c-axis perpendicular to the PS layer. The average crystallite size of the PS and ZnO/PS layers are 17.06 and 17.94 nm, respectively. The photoluminescence (PL) emission spectra of the ZnO/PS layers present three emission peaks, two peaks located at 387.5 and 605 nm due to the ZnO nanocrystalline film and a third located at 637.5 nm due to nanocrystalline PS. Raman measurements of the ZnO/PS layers were performed at room temperature (RT) and indicate that a high-quality ZnO nanocrystalline film was formed. Optical reflectance for all the layers was obtained using an optical reflectometer. The lowest effective reflectance was obtained for the ZnO/PS layers. The fabrication of crystalline silicon (c-Si) solar cells based on the ZnO/PS anti-reflection coating (ARC) layers was performed. The I–V characteristics of the solar cells were studied under 100 mW/cm² illumination conditions. The ZnO/PS layers were found to be an excellent ARC and to exhibit exceptional light-trapping at wavelengths ranging from 400 to 1000 nm, which led to a high efficiency of the c-Si solar cell of 18.15%. The ZnO/PS ARC layers enhance and increase the efficiency of the c-Si solar cell. In this paper, the fabrication processes of the c-Si solar cell with ZnO/PS ARC layers are an attractive and promising technique to produce high-efficiency and low-cost of c-Si solar cells.     

背入射Au/ZnO/Al结构肖特基紫外探测器

设计制作了一种Au/ZnO/Al结构的紫外探测器,光的入射方式采用背入射式。ZnO薄膜是用磁控溅射在蓝宝石衬底上制备的。I-V测试表明:Au与ZnO形成了肖特基接触。得到探测器的光响应峰值在352nm,截止边为382nm,可见抑制比达一个量级。由于该探测器是一种垂直结构器件,对于进一步实现ZnO紫外探测器阵列及单光子探测有很好的研究价值。     

Metal oxide buffer layer for improving performance of polymer solar cells

We report the application of aluminum doped ZnO (ZnO:Al) layer as a buffer on ITO glass for fabrication of non-inverted polymer solar cells. The ZnO:Al thin film was deposited using DC magnetron sputtering, with the thickness being varied from 23 to 100 nm. The devices showed most discernible improvements in their efficiencies when a thin layer of ZnO:Al film of thickness ∼40 nm was introduced. The observed enhancement in short circuit current density and open circuit voltage is likely attributed to the role of the ZnO:Al film as an optical tuner and an interfacial diffusion barrier. The result suggests that a metal oxide layer inserted between ITO and polymer layers can be a route for improving both efficiency and stability of polymer solar cells.     

ZnO/Ag/ZnO multilayer films for the application of a very low resistance transparent electrode

Transparent conductive ZnO/Ag/ZnO multilayer electrodes having much lower electrical resistance than the widely used transparent electrodes were prepared by simultaneous RF magnetron sputtering of ZnO and DC magnetron sputtering of Ag. An Ag film with different thickness was used as intermediate metallic layers. The optimum thickness of Ag thin films was determined to be 6 nm for high optical transmittance and good electrical conductivity. With about 20-25 nm thick ZnO films, the multilayer showed high optical transmittance in the visible range of the spectrum and had color neutrality. The electrical and optical properties of the multilayers were changed mainly by Ag film properties. A high quality transparent electrode, having sheet resistance as low as 3 ohm/sq and high transmittance of 90% at 580 nm, was obtained and could be reproduced by controlling the preparation parameter properly. The above property is suitable as transparent electrode for dye sensitized solar cells (DSSC).     

Modulation of light absorption by optical spacer in perovskite solar cells

Lead halide perovskite solar cells with planar heterojunction configuration have recently attracted tremendous attention because of their excellent power conversion efficiencies. The modulation of optical absorption by using an optical spacer layer is a unique method to enhance the device efficiency. Here, we demonstrate the application of thin ZnO layer that act as an optical spacer that enhance the power conversion efficiency perovskite devices from 8.92% to 10.7%, which is mainly due to increment in short‐circuit current density by 16% compared to the reference solar cell. The simulation data revealed that ZnO acts as an optical spacer layer that shifts length (average) of electric field |E|² distribution from 500 nm to 750 nm wavelength is 25 nm in the perovskite layer. Which represents that exciton generation region is moved to near the hole transport layer that enhances the exciton dissociation efficiency and device efficiency.     

Thickness study of Al:ZnO film for application as a window layer in Cu(In1−xGax)Se2 thin film solar cell

Structural, electrical and optical properties of Al doped ZnO (Al:ZnO) thin film of various thicknesses, grown by radio-frequency magnetron sputtering system were studied in relation to the application as a window layer in Cu(In_1−xGa_x)Se₂ (CIGS) thin film solar cell. It was found that the electrical and structural properties of Al:ZnO film improved with increasing its thickness, however, the optical properties degraded. The short circuit current density, J_sc of the fabricated CIGS based solar cells was significantly influenced by the variation of the Al:ZnO window layer thickness. Best efficiency was obtained when CIGS solar cell was fabricated with electrically and optically optimized Al:ZnO window layer.     

Interfacial engineering of CuO nanorod/ZnO nanowire hybrid nanostructure photoanode in dye-sensitized solar cell

Developing efficient and cost-effective photoanode plays a vital role determining the photocurrent and photovoltage in dye-sensitized solar cells (DSSCs). Here, we demonstrate DSSCs that achieve relatively high power conversion efficiencies (PCEs) by using one-dimensional (1D) zinc oxide (ZnO) nanowires and copper (II) oxide (CuO) nanorods hybrid nanostructures. CuO nanorod-based thin films were prepared by hydrothermal method and used as a blocking layer on top of the ZnO nanowires’ layer. The use of 1D ZnO nanowire/CuO nanorod hybrid nanostructures led to an exceptionally high photovoltaic performance of DSSCs with a remarkably high open-circuit voltage (0.764 V), short current density (14.76 mA/cm² under AM1.5G conditions), and relatively high solar to power conversion efficiency (6.18%) . The enhancement of the solar to power conversion efficiency can be explained in terms of the lag effect of the interfacial recombination dynamics of CuO nanorod-blocking layer on ZnO nanowires. This work shows more economically feasible method to bring down the cost of the nano-hybrid cells and promises for the growth of other important materials to further enhance the solar to power conversion efficiency.     

MoO3/Ag/Al/ZnO intermediate layer for inverted tandem polymer solar cells

We report an MoO3/Ag/Al/ZnO intermediate layer connecting two identical bulk heterojunction subcells with a poly(3-hexylthiophene) and [6,6]-phenyl-C61-butyric acid methyl ester(P3HT and PCBM) active layer for inverted tandem polymer solar cells. The highly transparent intermediate layer with an optimized thickness realizes an Ohmic contact between the two subcells for effective charge extraction and recombination. A maximum power conversion efficiency of 3.76% is obtained for the tandem cell under 100 mW/cm2 illumination, which is larger than that of a single cell(3.15%).The open-circuit voltage of the tandem cell(1.18 V) approaches double that of the single cell(0.61 V).     

CdS quantum dot-sensitized ZnO nanorod-based photoelectrochemical solar cells

ZnO nanorods have been grown using ZnO seed layer onto ITO-coated glass substrates. CdS quantum dots have been deposited onto ZnO nanorods using simple precursors by chemical method and the assembly of CdS quantum dots with ZnO nanorod has been used as photo-electrode in quantum dot-sensitized solar cells. X-ray diffraction results show that ZnO seed layer, ZnO nanorods, and CdS quantum dot-sensitized ZnO nanorods exhibit hexagonal structure. The particle size of CdS nanoparticle is 5 nm. The surface morphology studied using scanning electron microscope shows that the top surface of the vertically aligned ZnO nanorods is fully covered by CdS quantum dots. The ZnO nanorods have diameter ranging from 100 to 200 nm. The absorption spectra reveal that the absorption edge of CdS quantum dot-sensitized ZnO nanorods shift toward longer wavelength side when compared to the absorption edge of ZnO. The efficiency of the fabricated CdS quantum dot-sensitized ZnO nanorod-based solar cell is 0.69% and is the best efficiency reported so far for this type of solar cells.     

Ag-ZnO混合薄膜在聚合物太阳能电池中的应用

采用旋涂法研制了Ag浆SC100-ZnO混合薄膜,系统研究了不同混合比例SC100∶ZnO薄膜作为电子传输层或光散射层对聚合物太阳能电池器件性能的影响,并讨论了其中存在的物理机制。研究发现,采用少量SC100(1%和2.5%)混合的薄膜作为光散射层,可以提高器件的性能参数(短路电流密度和填充因子),器件的光电转换效率分别提高了4.4%和5%。     

Low-temperature-processed ZnO thin films as electron transporting layer to achieve stable perovskite solar cells

Morphology and surface property of ZnO thin films as electron transporting layer in perovskite solar cells are crucial for obtaining high-efficient and stable perovskite solar cells. In this work, two different preparation methods of ZnO thin films were carried out and the photovoltaic performances of the subsequent perovskite solar cells were investigated. ZnO thin film prepared by sol–gel method was homogenous but provided high series resistance in solar cells, leading to low short circuit current density. Lower series resistance of solar cell was obtained from homogeneous ZnO thin film from spin-coating of colloidal ZnO nanoparticles (synthesized by hydrolysis–condensation) in a mixture of 1-butanol, chloroform and methanol. The perovskite solar cells using this film achieved the highest power conversion efficiency (PCE) of 4.79% when poly(3-hexylthiophene) was used as a hole transporting layer. In addition, the stability of perovskite solar cells was also examined by measuring the photovoltaic characteristic for six consecutive weeks with the interval of 2 weeks. It was found that using double layers of the sol–gel ZnO and ZnO nanoparticles provided better stability with no degradation of PCE in 10 weeks. Therefore, this work provides a simple method for preparing homogeneous ZnO thin films in order to achieve stable perovskite solar cells, also for controlling their surface properties which help better understand the characteristics of perovskite solar cells.     

Inverted organic solar cells comprising low-temperature-processed ZnO films

Inverted organic solar cells are fabricated using low-temperature-annealed ZnO film as an electron transport layer. Uniform ZnO films were prepared by spin coating a diethylzinc (DEZ) precursor solution in air, followed by annealing at 100 °C. Organic solar cells prepared on these ZnO films with a 1:1 P3HT:PCBM blend as the active layer show a high power conversion efficiency of 4.03 %, which is more than 10 % higher than the PCE of solar cells comprising ZnO prepared via a high-temperature sol–gel route.     

Enhanced power efficiency of ZnO based organic/inorganic solar cells by surface modification

We present series of strategies to enhance efficiency of ZnO nanorods based organic/inorganic solar cells with spin-coated P3HT:PCBM blend as active layer. The performance of the as-fabricated devices is improved by controlling the size of ZnO nanorods, annealing temperature and time of active layer, surface modification of ZnO with PSBTBT. Optimized device of ITO/ZnO nanorod/P3HT:PCBM/Ag device with PSBTBT surface modification and air exposure reaches an efficiency of 2.02% with a short-circuit current density, open-circuit voltage and fill factor of 13.23 mA cm⁻², 0.547 V and 28%, respectively, under AM 1.5 irradiation of 100 mW m⁻², the increase in efficiency is 7-fold of the PSBTBT surface modified ITO/ZnO nanorods/P3HT:PCBM/Ag device compared with the unmodified one, which is own to the increased interface contact, expanded light absorption, tailored band alignment attributed to PSBTBT. We found exposure to air and surface modification is crucial to improve the device performance, and we discussed the mechanisms that affect the performance of the devices in detail.     

利用同步辐射光电子能谱技术测量ZnO/PbTe异质结的能带带阶

异质结结构界面的能带带阶是一个非常重要的参数,该参数的精确确定直接影响异质结的光电性质研究以及异质结在光电器件上的应用.利用同步辐射光电子能谱技术测量了ZnO/PbTe异质结结构的能带带阶.测量得到该异质结价带带阶为2.56 eV,导带带阶为0.49 eV,是一个典型的类型I的能带排列.利用变厚度扫描的测量方法发现,ZnO/PbTe界面存在两种键,分别是Pb—O键(低结合能)和Pb—Te键(高结合能).在ZnO/PbTe异质结界面的能带排列中导带带阶较小,而价带带阶较大,这一能带结构有利于PbTe中的激发电子输运到ZnO导电层中.该类结构在新型太阳电池、中红外探测器、激光器等器件中具有潜在的应用价值.     

Bathocuproine/Ag复合电极对于聚合物光伏器件效率和稳定性的影响

采用Bathocuproine/Ag (BCP/Ag)复合电极代替Ca/Al复合电极, 制备PTB7:PC71BM 作为光敏层的聚合物光伏器件, 并通过改变BCP薄膜厚度来研究BCP/Ag复合电极对于器件光电转换器和稳定性的影响. 研究发现: 在光敏层和金属电极之间插入BCP修饰层后, 器件性能得到了显著的改善, 在BCP厚度为5 nm时, 器件的效率达到了6.82%, 且略高于Ca/Al复合电极的器件效率; 相比于采用Ca/Al复合电极的器件, BCP/Ag复合电极增大了器件的短路电流和外量子效率, 使器件效率得到提高; 同时器件的稳定性得到了显著的改善, BCP/Ag 复合电极器件的衰减速率几乎和未插入BCP的器件衰减速率相同, 相对于Ca/Al复合电极器件大幅提高.