Multi-channel magnetotransport in Co2FeSi/(Al,Ga)As spin-LEDs

We have performed Hall effect measurements on Co₂FeSi/(Al,Ga)As spin light emitting diodes and have found unique field dependencies that differ strongly from the expected behaviors for both the ferromagnetic Co₂FeSi layer and the underlying semiconductor structure. To understand such unique field dependencies, we have developed a multi-channel transport model for parallel transport through a ferromagnet and a semiconductor. By applying this model to our data for the Hall and sheet resistance, we extract values for the carrier density and mobility in the semiconductor layer. We find that these values decrease with increasing growth temperature of the Co₂FeSi layer, presumably due to stronger in-diffusion of Co and Fe impurities, which compensate the n-type dopants in the underlying n-(Al, Ga) As layer. Despite such compensation, spin-LEDs with the Co₂FeSi layer grown at the relatively high temperature of 280 °C exhibit the highest spin injection efficiencies of more than 50%, hence calling into question the requirement of electron tunneling through the ferromagnet/semiconductor Schottky barrier for efficient spin injection.     

Magnetostrictive effects at a spin reorientation transition in a cubic crystal

Mössbauer studies of spin reorientation transitions in the high magnetostrictive materials RFe₂(R = rareearth) were performed. The transitions studied were [100] → [110] (Ho_0.9Tb_0.1Fe₂ at 240 K), [100] → [111] (Dy_0.7Tb_0.3Fe₂ at 220 K), [110] → [100] (Ho_0.5Er_0.5Fe₂ at 135 K and Ho_0.3Tm_0.7Fe₂ at 110 K), [111] → [100] (Dy_0.2Er_0.8Fe₂ at 140 K) and [110] → [111] (Ho_0.7Tb_0.3Fe₂ at 120 K). The first four transitions were found to be of second order, continuous reorientation of magnetization. In Dy_0.2Er_0.8Fe₂ and Ho_0.7Tb_0.3Fe₂ a sharp discontinuous first order transition is observed. In all systems the Mössbauer recoil free fraction, its anisotropy, the isomer shift and hyperfine interaction parameters change sharply through the spin reorientation transition. All phenomena observed can be understood in terms of changes in static magnetostrictive distortions combined with critical phonon softening at the spin reorientation phase transitions. The system Ho_1-xTb_xFe₂ is unique in behaviour as Ho_0.9Tb_0.1Fe₂ shows the highest magnetostrictive effects, whereas Ho_0.7 Tb_0.3Fe₂ shows almost none.     

Laser radiation control of the magnetic state of multilayer nanofilms

Physical mechanisms of magnetization reversal of multilayer magnetic nanofilms by laser radiation are examined and the experiments on the effect of the magnetic field and nanosecond and picosecond laser pulses on the conductivity of the Tb₁₉Co₅Fe₇₆/Pr₆O₁₁/Tb₂₂Co₅Fe₇₃ and Co₈₀Fe₂₀/Pr₆O₁₁/Co₃₀Fe₇₀ tunnel microcontacts are carried out. It is shown that with the help of such laser pulses, magnetization reversal of magnetic nanolayers is possible in a zero external magnetic field under the action of the spin current magnetic field, induced by the photon pressure of laser radiation, or the magnetic field generated by circularly polarized picosecond laser pulses. A relative change in the resistance upon the laser magnetization reversal of one of the nanolayers in the Co₈₀Fe₂₀/Pr₆O₁₁/Co₃₀Fe₇₀ microcontacts reaches a value of ΔR/R = 0.06 for T = 300 K and ΔR/R = 0.25 for T = 80 K, in the Tb₁₉Co₅Fe₇₆/Pr₆O₁₁/Tb₂₂Co₅Fe₇₃ microcontacts, ΔR/R = 0.3 for T = 300 K and ΔR/R = 0.7 for T = 80 K.     

Application of M?ssbauer spectroscopy in magnetism

An overview is provided on our recent work that applies ⁵⁷Fe M?ssbauer spectroscopy to specific problems in nanomagnetism. ⁵⁷Fe conversion electron M?ssbauer spectroscopy (CEMS) in conjunction with the ⁵⁷Fe probe layer technique as well as ⁵⁷Fe nuclear resonant scattering (NRS) were employed for the study of various nanoscale layered systems: (i) metastable fct-Fe; a strongly enhanced hyperfine magnetic field B_hf of ～39?T at 25?K was observed in ultrahigh vacuum (UHV) on uncoated three-monolayers thick epitaxial face-centered tetragonal (fct) ⁵⁷Fe(110) ultrathin films grown by molecular-beam epitaxy (MBE) on vicinal Pd(110) substrates; this indicates the presence of enhanced Fe local moments, μ_Fe, as predicted theoretically; (ii) Fe spin structure; by applying magnetic fields, the Fe spin structure during magnetization reversal in layered (Sm–Co)/Fe exchange spring magnets and in exchange-biased Fe/MnF₂ bilayers was proven to be non-collinear and depth-dependent; (iii) ferromagnet/semiconductor interfaces for electrical spin injection; CEMS was used as a diagnostic tool for the investigation of magnetism at the buried interface of Fe electrical contacts on the clean surface of GaAs(001) and GaAs(001)-based spin light-emitting diodes (spin LED) with in-plane or out-of-plane Fe spin orientation; the measured rather large average hyperfine field of ～27?T at 295?K and the distribution of hyperfine magnetic fields, P(B_hf), provide evidence for the absence of magnetically “dead” layers and the existence of relatively large Fe moments (μ_Fe ～ 1.8?μ_B) at the ferromagnet/semiconductor interface. - Finally, a short outlook is given for potential applications of M?ssbauer spectroscopy on topical subjects of nanomagnetism/spintronics.     

Perpendicular giant magnetoresistance of Co91Fe9/Cu exchange-biased spin-valves: further evidence for a unified picture

Measurements are reported of the increase in specific resistance, AΔR, with increasing Co₉₁Fe₉ layer thickness in current-perpendicular to the plane (CPP) exchange-biased spin-valves (EBSVs) of Co₉₁Fe₉ and Cu. Analysis of these measurements yields a spin anisotropy parameter for Co₉₁Fe₉ of β=0.65±0.05, and a spin diffusion length of l^CoFe_sf=12±1 nm. The value of β agrees reasonably well with those obtained experimentally and theoretically for dilute CoFe alloys, thus providing additional support for a unified picture of spin-polarized transport in CPP-MR and bulk alloys. This value of l^CoFe_sf, and the previously determined l^Py_sf for Permalloy, scale approximately inversely with the residual resistivities of the two alloys.     

Specific features of infrared absorption in films materials subjected to a magnetic field

The reflection spectra and magnetorefractive effect (MRE) of metal (Co, CoFe), semiconductor (Si, GaAs), and granular and amorphous Co₃₀Ag₇₀ and Co₅₉Fe₅Ni₁₀Si₁₁B₁₅ films are studied in the IR spectral region at λ=2.5–25 μm. It is found that the IR optical properties of the ferromagnetic metal films can be described with regard to light absorption due to electron transitions in the two spin systems. The MRE is found to occur in both the ferromagnetic (Co, CoFe) and semiconductor (Si, GaAs) films. The amplitude and shape of the MRE are determined for the p and s polarizations of light. It is shown that, to a first approximation, the IR optical properties of the films with giant magnetoresistance can be described by the Drude theory, while the MRE is explained on the basis of a modified Hagen-Rubens relation. Variations in the IR reflection of semiconductor or amorphous metal films in the magnetic field are found to depend on the degree of polarization of localized electron states at the Fermi level.     

Theoretical investigations of the (110) interface between the full Heusler alloys and GaAs

The ab initio calculations of the electronic structure and magnetic properties of the (110) interface between Co₂YZ (Y = Cr or Mn and Z = Al, Si, or Ge) and GaAs are carried out by means of the density functional theory depending on the contact configuration. It is revealed that two of four possible atomic interface configurations have high spin polarization. For Co₂MnSi/GaAs(110), one of the contacts has almost 100% spin polarization. Calculations of the adhesion energy on the interfaces allow the most stable contacts to be established.     

Investigation of half metallicity in Fe doped CdSe and Co doped CdSe materials

The objective of the present work is to evaluate half metallicity and spin dependent transport properties of iron doped CdSe and cobalt doped CdSe compounds. The spin-polarized band structures (semiconductor in one spin state and conductor in the other spin state) predict that Cd_0.875Fe_0.125Se and Cd_0.875Co_0.125Se are half metals. The calculated crystal filed splitting energy show larger energy gap between e_g and t_2g for Fe than Co doped CdSe compound. Furthermore, magnetization, exchange coupling and band-gap increase with decrease in the lattice constant. Overall, Cd_0.875Fe_0.125Se and Cd_0.875Co_0.125Se in the zinc-blend phase show half-metallic ferromagnetic nature and are expected to be potential materials for spintronic devices.     

Spin-dependent current and magnetization reversal in Tb22Co5Fe73/Pr6O11/Tb19Co5Fe76 nanofilms in laser radiation field

The results of investigation of magnetization reversal dynamics of ferrimagnetic amorphous nanolayers with transverse anisotropy is investigated for Al₂O₃/Tb₂₂Co₅Fe₇₃/Al₂O₃ and Al₂O₃/Tb₂₂Co₅Fe₇₃/Pr₆O₁₁/Tb₁₉Co₅Fe₇₆/Al₂O₃ multilayer films irradiated by laser pulses, as well as the effect of such irradiation on the resistance in a Tb₂₂Co₅Fe₇₃/Pr₆O₁₁/Tb₁₉Co₅Fe₇₆ tunnel microcontact. It is shown that magnetization reversal in magnetic nanolayers in the laser radiation field may occur not only because of heating and the action of the external magnetic field, but also under the action of the magnetic field induced by circularly polarized laser radiation, as well as owing to transfer of magnetic moments by polarized electrons. Laser radiation can be used to control (by changing the resistance by a factor of 1.5–2.0) the conductivity of the Tb₂₂Co₅Fe₇₃/Pr₆O₁₁/Tb₁₉Co₅Fe₇₆ tunnel microresistor. Original Russian Text ? N.N. Krupa, 2009, published in Zhurnal éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2009, Vol. 108, No. 5, pp. 981–992.     

Synthetic Co50Pt50/Ru/CoFe hard–soft trilayer in spin valves

The influence of deposition power and seedlayer on the properties of hard magnet Co₅₀Pt₅₀ was studied. Co₅₀Pt₅₀(/Co₉₀Fe₁₀)/Ru/Co₉₀Fe₁₀ trilayer was used as pining/pinned layer in spin valves. The influences of different hard layer, soft layer and free layer on exchange bias, interlayer coupling, and magnetoresistance (MR) ratio were studied. Weak antiferromagnetic interlayer coupling was obtained by adjusting the thickness of hard and soft layers. MR of a spin valve with structure Cr2/CoFe0.5/CoPt4/CoFe0.5/Ru0.8/CoFe2.2/Cu2.05/CoFe2.6/Cu1.1/Ta1 reached 10.68% (unit in nm), which is comparable to those of IrMn-based synthetic spin valves. The increment of the coercivity of the free layer is mainly due to the static magnetic interaction between the hard layer and the free layer.     

Temperature dependence of spin injection efficiency in an epitaxially grown Fe/GaAs hybrid structure

The electrical spin injection from Fe into an n-doped GaAs channel through Schottky-tunnel-barrier is observed from 1.8 K to room temperature. The magnitude of local spin valve signal (ΔR/R₀) decreases as the temperature increases. In each temperature, we calculated the injected polarization (η) considering the spin drift effect induced by the electric field. The interfacial polarizations of 19.3% and 12.6% are acquired for Fe/GaAs junction at T=1.8 and 300 K, respectively. The temperature dependence of spin injection efficiency is matched with interface resistance variation. As the temperature increases, Schottky-tunnel-barrier property is diminished so that the spin injection efficiency would be reduced.     

Room-temperature magnetoresistance in CoFeB/STO/CoFeB magnetic tunnel junctions

A series of Co₄₀Fe₄₀B₂₀/SrTiO₃/Co₄₀Fe₄₀B₂₀ magnetic tunnel junctions with a bottom-pinned synthetic antiferromagnet have been prepared by sputtering. Devices optimally annealed at 325 °C exhibit an exchange bias of about 65 mT, and a tunnel magnetoresistance of 2%. The smaller than predicted effect is attributed to the lack of epitaxy between the crystallized CoFeB electrodes and the SrTiO₃ (STO) barrier, due to poor crystal quality of the barrier layer. Unlike MgO, well-crystallized, oriented STO does not grow on amorphous Co₄₀Fe₄₀B₂₀.     

Synthesis and magnetic properties of Pr(Fe 1-xCo x) 2 and Pr 1-yTb y(Fe 0.4Co 0.6) 2 alloys

Measurement of X-ray diffraction, magnetization and magnetostriction was made on the Pr(Fe_1-xCo_x)₂ (x=0.4, 0.5 and 0.6) and Pr_1-yTb_y(Fe_0.4Co_0.6)₂ (y=0, 0.1, 0.2 and 0.3) alloy series. It was found that a cubic phase with the MgCu₂ structure can be obtained in the Pr(Fe_1-xCo_x)₂ series only at x=0.6. The Pr_1-yTb_y(Fe_0.4Co_0.6)₂ system has the cubic MgCu₂ structure over the studied range for y. The lattice constant and magnetization decrease and the Curie temperature increases with increasing y. At 7 K, Pr_1-yTb_y(Fe_0.4Co_0.6)₂ samples are found to have huge intrinsic coercivities, which are associated with narrow domain walls. It is also found from X-ray measurement that in Pr_1-yTb_y(Fe_0.4Co_0.6)₂ the spontaneous magnetostriction ₁₁₁ increases due to Tb substitution, while the saturation magnetostriction _s is much lower than ₁₁₁. This can be attributed to the large value of ₁₀₀ with an opposite sign to ₁₁₁, which may be caused by the filling of the d band due to Co substitution. PACS 75.80.-g; 61.10.-i; 75.60.-d     

GaAs自旋注入及巨霍尔效应的研究

在自旋电子学研究中,一般以超晶格结构、自旋阀、隧道结来实现,另一种自旋注入典型方法是稀磁半导体材料,如GaMnAs,本文通过颗粒膜实现自旋注入,利用磁控溅射法将Fe颗粒嵌入GaAs阵体上,制备了(GaAs)₁₉Fe₈₁颗粒膜样品,在室温条件下观测到15 μΩ ·cm最大饱和霍尔电阻率,该效应比纯铁的饱和霍尔电阻率大了一个数量级,成功地实现了自旋注入. 关键词： 自旋注入 颗粒膜 巨霍尔效应     

Effect of NiAl underlayer and spacer on magnetoresistance of current-perpendicular-to-plane spin valves using Co2Mn(Ga0.5Sn0.5) Heusler alloy

We investigated the effect of a NiAl underlayer and spacer on magnetoresistive (MR) properties in current-perpendicular-to-plane spin valves (CPP-SVs) using Co₂Mn(Ga_0.5Sn_0.5) (CMGS) Heusler alloy ferromagnetic layers. The usage of a NiAl underlayer allowed a high temperature annealing for the L2₁ ordering of the bottom CMGS layer, giving rise to a MR ratio of 10.2% at room temperature. We found that the usage of a NiAl spacer layer also improved the tolerance of the multilayer structure against thermal delamination, which allowed annealing to induce the L2₁ structure in both the bottom and top CMGS layers. However, the short spin diffusion length of NiAl resulted in a lower MR ratio compared to that obtained using a Ag spacer. Transmission electron microscopy of the multilayer structure of CPP-SVs showed that the atomically flat layered structure was maintained after the annealing.     

Mössbauer effect investigations of Co83Fe17/Au/Co/Au multilayers

[Co₈₃Fe₁₇/Au/Co/Au]_N sputter deposited multilayers displaying a giant magnetoresistance have been investigated. Complementary magnetic measurements were conducted in order to characterize a spin reorientation transition in Co₈₃Fe₁₇ layers sandwiched between Au spacers. The transition from a perpendicular magnetic anisotropy to easy-plane one takes place at the thickness of about 1 nm.     

Temperature and magnetic field dependence of the elastic properties of the HoxTb1−xCo2 Laves phase compounds

Ultrasonic sound velocity measurements have been carried out in order to determine the adiabatic compressibility and elastic moduli of the pseudobinary Ho_xTb_1?xCo₂ Laves phase compounds. The anomalies, associated with the Curie temperatures and the presence of various spin reorientations, allowed the determination of the spin orientation diagram of the system. The similarity of this spin orientation diagram with that previously established of the Ho_xTb_1?xFe₂ system strongly supports the single rare earth ion model for the magnetic anisotropy behavior of the compounds studied. Measurements carried out in an external magnetic field revealed the presence of a significant ΔE effect.     

本征GaAs量子阱中电子自旋扩散输运的时-空分辨吸收光谱研究

发展了一种时-空分辨圆偏振光抽运-探测光谱及其理论,并用于本征GaAs量子阱中电子自旋扩散输运的实验研究.获得室温下本征GaAs量子阱中的“自旋双极扩散系数”为D_as=37.5±15 cm²/s.此结果比用自旋光栅法测量到的掺杂GaAs量子阱中电子自旋扩散系数小.解释为是由于“空穴库仑拖曳”效应减慢了电子自旋波包的扩散输运. 关键词： 时-空分辨抽运-探测光谱 电子自旋扩散 GaAs量子阱     

New materials research for high spin polarized current

The author reports here a thorough investigation of structural and magnetic properties of Co₂FeAl_0.5Si_0.5 Heusler alloy films, and the tunnel magnetoresistance effect for junctions with Co₂FeAl_0.5Si_0.5 electrodes, spin injection into GaAs semiconductor from Co₂FeAl_0.5Si_0.5, and spin filtering phenomena for junctions with CoFe₂O₄ ferrite barrier. It was observed that tunnel magnetoresistance ratio up to 832%(386%) at 9 K (room temperature), which corresponds to the tunnel spin polarization of 0.90 (0.81) for the junctions using Co₂FeAl_0.5Si_0.5 Heusler electrodes by optimizing the fabrication condition. It was also found that the tunnel magnetoresistance ratio are almost the same between the junctions with Co₂FeAl_0.5Si_0.5 Heusler electrodes on Cr buffered (1 0 0) and (1 1 0) MgO substrates, which indicates that tunnel spin polarization of Co₂FeAl_0.5Si_0.5 for these two direction are almost the same. The next part of this paper is a spin filtering effect using a Co ferrite. The spin filtering effect was observed through a thin Co-ferrite barrier. The inverse type tunnel magnetoresistance ratio of −124% measured at 10 K was obtained. The inverse type magnetoresistance suggests the negative spin polarization of Co-ferrite barrier. The magnetoresistance ratio of −124% corresponds to the spin polarization of −0.77 by the Co-ferrite barrier. The last part is devoted to the spin injection from Co₂FeAl_0.5Si_0.5 into GaAs. The spin injection signal was clearly obtained by three terminal Hanle measurement. The spin relaxation time was estimated to be 380 ps measured at 5 K.     

Room Temperature Spin Accumulation Effect in Boron Doped Si Created by Epitaxial Fe<Subscript>3</Subscript>Si/<Emphasis Type="Italic">p</Emphasis>-Si Schottky Contact

To study spin-dependent transport phenomena in Fe₃Si/p-Si structures we fabricated 3-terminal planar microdevices and metal/semiconductor diode using conventional photolithography and wet chemical etching. I?V curve of prepared diode demonstrates rectifying behavior, which indicates the presence of Schottky barrier in Fe₃Si/p-Si interface. Calculated Schottky barrier height is 0.57 eV, which can provide necessary conditions for spin accumulation in p-Si. Indeed, in 3-terminal planar device with Fe₃Si/p-Si Schottky contact Hanle effect was observed. By the analysis of Hanle curves spin lifetime spin diffusion length in p-Si were calculated, which are 145 ps and 405 nm, respectively (at T = 300 K). Spin lifetime strongly depends on temperature which can be related to the fact that spin-dependent transport in our device is realized via the surface states. This gives a perspective of creation of spintronic devices based on metal/semiconductor structure without need for forming tunnel or Schottky tunnel contact.