Chemical functionalization of epitaxial graphene on SiC using tetra(4-carboxyphenyl)porphine

Ideal undisturbed functionalized epitaxial graphene on SiC was examined by angle resolved photoemission spectroscopy, scanning photoemission microscopy and atomic force microscope. The surface was prepared by non-covalently attaching tetra(4-carboxyphenyl)-porphine(TCPP) on the surface. This material performs well as a chemically very sensitive and thermally very stable template. The adsorbed TCPP layer does not disturb the intrinsic physical properties of the graphene. A patterned Al₂O₃ layer can be easily produced by preparing a pre-patterned TCPP on the graphene surface.     

Molecular beam epitaxy of GaN on a substrate of MoS2 layered compound

The feasibility of MoS₂ layered compound as a substrate for GaN growth was investigated. GaN films were successfully grown on MoS₂ by plasma-enhanced molecular beam epitaxy and the crystal quality of GaN on MoS₂ was compared with that on Al₂O₃. For GaN grown on MoS₂ substrate, it was found that the surface flatness observed by atomic force microscopy, stress in the film measured by Raman spectroscopy, optical properties measured by photoluminescence spectroscopy, and threading dislocation density observed by transmission electron microscopy show superior properties compared with that grown on Al₂O₃. These results suggest the layered compound such as MoS₂, which has no dangling bonds on the surface and has lattice mismatching of 0.9% to GaN, has high potential for a substrate of GaN growth. Received: 1 March 1999 / Accepted: 8 March 1999 / Published online: 26 May 1999     

Stress relaxation of GaN microstructures on a graphene‐buffered Al2O3 substrate

GaN microstructures were grown on c‐Al₂O₃ with a multi‐stacked graphene buffered layer using metal metal‐organic chemical‐vapor deposition. Under the same growth conditions, the nucleation of GaN was suppressed by the low surface energy of graphene, resulting in a much lower density of microstructures relative to those grown on c‐Al₂O₃. Residual stress in the GaN microstructures was estimated from the peak shift of the E₂ phonon using micro‐Raman spectroscopy. The results showed that the compressive stress of approximately 0.36 GPa in GaN on c‐Al₂O₃ caused by lattice mismatch and the difference in the thermal expansion coefficient was relaxed by introducing the graphene layer. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Al2O3 thin films by plasma-enhanced chemical vapour deposition using trimethyl-amine alane (TMAA) as the Al precursor

2 O₃ thin films by plasma-enhanced chemical vapour deposition (PECVD) using trimethyl-amine alane (TMAA) as the Al precursor. The thin films were deposited on both Si and quartz silica (SiO₂) substrates. Deposition rates were typically 60 Å min^-1 keeping the TMAA temperature constant at 45 °C. The deposited Al₂O₃ thin films were stoichiometric alumina with low carbon contamination (0.7–1.3 At%). The refractive index ranged from 1.54 to 1.62 depending on the deposition conditions. The deposition rate was studied as a function of both the RF power and the substrate temperature. The structure and the surface of the deposited Al₂O₃ thin films were studied using X-ray diffraction, atomic force microscopy (AFM) and scanning electron microscopy (SEM). Received: 20 May 1997/Accepted: 12 June 1997     

Surface states and adsorption energy of carbon in the interface of the two-dimensional graphene/Al2O3(0001) system

This paper reports on the results of density functional theory investigations of the band structure of the graphene/Al₂O₃(0001) interface as a possible element base of graphene field-effect transistors. The regularities of the changes in the band structure in the series graphene → 2D-Al₂O₃(0001) → 2D-graphene/Al₂O₃(0001) have been analyzed. The specific features of the energy distribution of the surface states in the 2D-graphene/Al₂O₃(0001) interface have been discussed. The nature of the bonding between graphene and sapphire has been investigated using the density functional theory calculations.     

Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface

We demonstrate electrical tunnel spin injection from a ferromagnet to graphene through a high-quality Al₂O₃ grown by atomic layer deposition (ALD). The graphene surface is functionalized with a self-assembled monolayer of 3,4,9,10-perylene tetracarboxylic acid (PTCA) to promote adhesion and growth of Al₂O₃ with a smooth surface. Using this composite tunnel barrier of ALD-Al₂O₃ and PTCA, a spin injection signal of ∼30 Ω has been observed from non-local magnetoresistance measurements at 45 K, revealing potentially high performance of ALD-Al₂O₃/PTCA tunnel barrier for spin injection into graphene.     

Simulation of KrF laser ablation of Al2O3-TiC

Previous work by the authors on micromachining of Al₂O₃-TiC ceramics using excimer laser radiation revealed that a columnar surface topography forms under certain experimental conditions. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) observations show that the columns develop from small globules of TiC, which appear at the surface of the material during the first laser pulses. To understand the mechanism of formation of these globules, a 2D finite element ablation model was developed and used to simulate the time evolution of the temperature field and of the surface topography when a sample of Al₂O₃-TiC composite is treated with KrF laser radiation. Application of the model showed that the surface temperature of TiC rises much faster than that of Al₂O₃, but since TiC has a very high boiling temperature, its vaporization is significant only for a short time. By contrast, the surface temperature of Al₂O₃ rises above its boiling temperature for a much longer period, leading to a greater ablation depth than TiC. As a result, a small TiC globule stands above the Al₂O₃ surface. The results of the model are compared with experimental measurements performed by AFM. After three pulses, the height of the globules predicted by the model is about 340 nm, in good agreement with the height measured experimentally, about 400 nm.     

Laser-induced forward transfer technique for maskless patterning of amorphous V2O5 thin film

A laser-induced forward transfer technique has been applied for the maskless patterning of amorphous V₂O₅ thin films. A sheet beam of a frequency doubled (SHG) Q-switched Nd:YAG laser was irradiated on a transparent glass substrate (donor), the rear surface of which was pre-coated with a vacuum-deposited V₂O₅ 180 nm thick film was either in direct contact with a second glass substrate (receiver) or a 0.14 mm air-gap was maintained between the donor film and the receiving substrate. Clear, regular stripe pattern of the laser-induced transferred film was obtained on the receiver. The pattern was characterized using X-ray diffraction (XRD), optical absorption spectroscopy, scanning electron microscopy (SEM), energy dispersive analysis of X-ray (EDAX), atomic force microscopy (AFM), etc.     

Pt–Al2O3 nanocoatings for high temperature concentrated solar thermal power applications

Nano-phased structures based on metal–dielectric composites, also called cermets (ceramic–metal), are considered among the most effective spectral selective solar absorbers. For high temperature applications (stable up to 650 °C) noble metal nanoparticles and refractory oxide host matrices are ideal as per their high temperature chemical inertness and stability: Pt/Al₂O₃ cermet nano-composites are a representative family. This contribution reports on the optical properties of Pt/Al₂O₃ cermet nano-composites deposited in a multilayered tandem structure. The radio-frequency sputtering optimized Pt/Al₂O₃ solar absorbers consist of stainless steel substrate/ Mo coating layer/ Pt–Al₂O₃/ protective Al₂O₃ layer and stainless steel substrate/ Mo coating layer /Pt–Al₂O₃ for different composition and thickness of the Pt–Al₂O₃ cermet coatings. The microstructure, morphology, theoretical modeling and optical properties of the coatings were analyzed by the x-ray diffraction, atomic force, microscopy, effective medium approximation and UV–vis specular and diffuse reflectance.     

The structure and optical characters of the ZnO film grown on GaAs/Al2O3 substrate

In this paper ZnO films are grown on GaAs/Al₂O₃ substrates at different temperature by metal-organic chemical vapor deposition (MOCVD). The GaAs/Al₂O₃ substrates are formed by depositing GaAs layer (∼35 nm) on the Al₂O₃ substrate. The results of X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) demonstrate that most of the Ga and As atoms form Ga-As bond and the GaAs layer does not present any orientation. The characters of the ZnO films grown on GaAs/Al₂O₃ substrates are investigated by XRD, photoluminescence (PL), atomic force microscopy (AFM) and Raman scattering. Compared with ZnO film grown on Al₂O₃ substrate, ZnO film prepared by our fabrication scheme has good crystal and optical quality. Meanwhile its grain size becomes bigger according to the AFM image. Raman analysis indicates that the intrinsic defects and the in-plane tensile stress are obviously reduced in ZnO/GaAs/Al₂O₃ samples.     

Laser scribing on HOPG for graphene stamp printing on silicon wafer

Highly oriented pyrolytic graphite (HOPG) was scribed by pulsed laser beam to produce square patterns. Patterning of HOPG surface facilitates the detachment of graphene layers during contact printing. Direct HOPG-to-substrate and glue-assisted stamp printing of a few-layers graphene was compared. Printed graphene sheets were visualized by optical and scanning electron microscopy. The number of graphene layers was measured by atomic force microscopy. Glue-assisted stamp printing allows printing relatively large graphene sheets (40×40 μm) onto a silicon wafer. The presented method is easier to implement and is more flexible than the majority of existing ways of placing graphene sheets onto a substrate.     

X-ray spectral analysis of the interface of a thin Al<Subscript>2</Subscript>O<Subscript>3</Subscript> film prepared on silicon by atomic layer deposition

The extent and phase chemical composition of the interface forming under atomic layer deposition (ALD) of a 6-nm-thick Al₂O₃ film on the surface of crystalline silicon (c-Si) has been studied by depthresolved, ultrasoft x-ray emission spectroscopy. ALD is shown to produce a layer of mixed Al₂O₃ and SiO₂ oxides about 6–8 nm thick, in which silicon dioxide is present even on the sample surface and its concentration increases as one approaches the interface with the substrate. It is assumed that such a complex structure of the layer is the result of interdiffusion of oxygen into the layer and of silicon from the substrate to the surface over grain boundaries of polycrystalline Al₂O₃, followed by silicon oxidation. Neither the formation of clusters of metallic aluminum near the boundary with c-Si nor aluminum diffusion into the substrate was revealed. It was established that ALD-deposited Al₂O₃ layers with a thickness up to 60 nm have similar structure.     

Fluorination of Al2O3 blocking layer for improving the performance of metal‐oxide‐nitride‐oxide‐silicon flash memory

The characteristics of Al₂O₃ film grown by atomic‐layer deposition as blocking layer with and without fluorine plasma treatment were investigated based on a capacitor structure of Al/Al₂O₃/TaON/SiO₂/Si. The physical structure was studied by transmission electron microscopy, and the chemical composition of the blocking layer was analyzed by X‐ray photoelectron spectroscopy and secondary ion mass spectroscopy. Moreover, the surface roughness of the blocking layer was investigated by atomic force microscopy. Compared with a capacitor with Al₂O₃ blocking layer, the one with fluorinated Al₂O₃ displayed higher programming/erasing speeds, better endurance property and better charge retention characteristic because the fluorination could reduce excess oxygen and traps in the blocking layer, thus forming a larger barrier height at the interface between the charge‐trapping layer and the blocking layer. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Studying condensed phase formed upon interaction between a high-power laser pulse and crystal aluminum oxide

Forms of the condensed phase created under the action of a high-power CO₂ laser pulse (power, 4 J/pulse; λ = 10.6 μm; pulse duration, 1.5 μs) on optical sapphire (Al₂O₃) solid targets are investigated. The ablation products emitted from the laser crater and the particles formed in the space above the surface of the target are collected using witness samples oriented in a predetermined manner with respect to the laser crater. Forms of the condensed phase are studied via electron microscopy and atomic force microscopy. Conclusions are drawn as to the mechanisms of formation of particles with different shapes and structures, including Al₂O₃ vacuum hollow microspheres (hollow bubbles).     

Structural properties of Al2O3 dielectrics grown on TiN metal substrates by atomic layer deposition

We investigated on the structural properties of Al₂O₃ dielectrics grown on TiN metal substrates using an atomic layer deposition technique with tri-methyl-aluminum and either O₃ or H₂O as the precursor and oxidant, respectively. The structural and morphological features of these films were examined by atomic force microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy measurements. We find that Al₂O₃ dielectric films with the O₃ oxidant exhibit a rough morphology, a thick TiO₂ film, and a small amount of contaminants such as carbon and hydrogen. The reason for the rapid diffusion of oxygen atoms into the TiN lattice leads to the formation of TiO₂ layer on the TiN substrate. This is due to the higher oxidation potential of the O₃ compared to the H₂O.     

Nanocomposites of Poly(vinyl alcohol) Reinforced with Chemically Modified AL2O3: Synthesis and Characterization

The surface of α-alumina (Al₂O₃) nanoparticles was first modified with γ-aminopropyltriethoxy silane as a coupling agent. Then a series of poly(vinyl alcohol)/ surface modified Al₂O₃ nanocomposite suspensions were prepared in ethanol by a simple ultrasonic irradiation process. Composite films with 5, 10, and 15 wt % of inorganic Al₂O₃ nanoparticles were achieved after solvent evaporation. The formation of the composite materials were confirmed by Fourier transform infrared spectroscopy, X-ray diffraction, field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), thermogravimetric analysis (TGA), and optical transparencies. The FE-SEM and TEM results showed a homogenous dispersion of nanoscale inorganic particles in the poly(vinyl alcohol) matrix. TGA thermographs showed that the thermal stability of the prepared Al₂O₃-reinforced nanocomposites was improved, increasing with increasing content of the nanoparticles. According to the optical transparencies, the optical clarity of poly(vinyl alcohol)/Al₂O₃ nanocomposite films was only slightly affected by the presence of the Al₂O₃ content.     

Scanning tunneling microscopy study of growth of Pt nanoclusters on thin film Al2O3/NiAl(1 0 0)

The growth of Pt nanoclusters on thin film Al₂O₃ grown on NiAl(1 0 0) was studied by using scanning tunneling microscopy (STM). The samples were prepared by vapor depositing various amounts of Pt onto the Al₂O₃/NiAl(1 0 0) at different substrate temperatures in ultra high vacuum (UHV). The STM images show that sizeable Pt nanoclusters grow solely on crystalline Al₂O₃ surface. These Pt clusters appear to be randomly distributed and only a few form evident alignment patterns, contrasting with Co clusters that are highly aligned on the crystalline Al₂O₃. The size distributions of these Pt clusters are rather broader than those of the Co clusters on the same surface and the sizes are evidently smaller. With increasing coverage or deposition temperature, the number of larger clusters is enhanced, while the size of the majority number of the clusters remains around the same (0.4 nm as height and 2.25 nm as diameter), which differs drastically from the Pt clusters on γ-Al₂O₃/NiAl(1 1 0) observed earlier. These Pt cluster growth features are mostly attributed to smaller diffusion length and ease to form stable nucleus, arising from strong Pt-Pt and Pt-oxide interactions and the peculiar protrusion structures on the ordered Al₂O₃/NiAl(1 0 0). The thermal stability of Pt nanoclusters was also examined. The cluster density decreased monotonically with annealing temperature up to 1000 K at the expense of smaller clusters but coalescence is not observed.     

Magnetoelectric oxide films for spin manipulation in graphene

The challenge of creating a graphene spin field effect transistor (spin‐FET) demands a magnetic gate dielectric material whose magnetization can be switched electrically. We have grown films of Cr₂O₃ on top of graphite and graphene by pulsed laser deposition that shows this crucial functionality. We demonstrate that the Cr₂O₃ films are magnetoelectric by poling them in combined electric and magnetic fields and then using magnetic force microscopy to observe spontaneous surface domain structure as a function of poling field. In addition, we show that the electric field created by a conducting AFM tip can be used to write magnetic patterns in the film that demonstrate the kind of continuous magnetoelectric control needed for a prototype spin‐FET. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Properties of an Al<Subscript>2</Subscript>O<Subscript>3</Subscript>/Si interface

The phase chemical composition of an Al₂O₃/Si interface formed upon molecular deposition of a 100-nm-thick Al₂O₃ layer on the Si(100) (c-Si) surface is investigated by depth-resolved ultrasoft x-ray emission spectroscopy. Analysis is performed using Al and Si L_{2, 3} emission bands. It is found that the thickness of the interface separating the c-Si substrate and the Al₂O₃ layer is approximately equal to 60 nm and the interface has a complex structure. The upper layer of the interface contains Al₂O₃ molecules and Al atoms, whose coordination is characteristic of metallic aluminum (most likely, these atoms form sufficiently large-sized Al clusters). The shape of the Si bands indicates that the interface layer (no more than 10-nm thick) adjacent to the substrate involves Si atoms in an unusual chemical state. This state is not typical of amorphous Si, c-Si, SiO₂, or SiO_x (it is assumed that these Si atoms form small-sized Si clusters). It is revealed that SiO₂ is contained in the vicinity of the substrate. The properties of thicker coatings are similar to those of the 100-nm-thick Al₂O₃ layer and differ significantly from the properties of the interfaces of Al₂O₃ thin layers.     

Surface‐enhanced Raman scattering investigations on silver nanoparticles deposited on alumina and titania nanotubes: influence of the substrate material on surface‐enhanced Raman scattering activity of Ag nanoparticles

Silver nanoparticles deposited on various ‘inert’ porous materials (mainly Al₂O₃ and TiO₂) are often used as substrates for surface‐enhanced Raman scattering (SERS) measurements. In this study, we used the sputter deposition technique to cover tubular arrays of Al₂O₃ and TiO₂ with Ag nanoparticles. Raman spectra of pyridine (as a probe molecule) and of two selected dyes (5‐(4‐dimethylaminobenzylidene)rhodanine and 5‐(4‐(dimethylamino)benzylidene)‐3‐(3‐methoxypropyl)rhodanine) adsorbed on fabricated Ag/TiO₂‐n/Ti and Ag/Al₂O₃‐n/Al substrates were measured. We found that the SERS spectra of pyridine adsorbed on Ag nanoparticles deposited on an Al₂O₃‐n/Al substrate are distinctly different from those measured for an Ag/TiO₂‐n/Ti composite. Similar effects were observed for dyes adsorbed on the surface of both composites. The spectral differences between two kinds of composites (Ag/TiO₂‐n/Ti and Ag/Al₂O₃‐n/Al) are discussed in terms of (1) the modified electronic structure of the Ag nanoparticles due to their interaction with different substrate materials and (2) the different atomic topology of the metal particles thus deposited on the surfaces of the substrates. Composite samples were also studied with the aid of scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) to reveal their characteristic morphological and chemical features. Copyright © 2012 John Wiley & Sons, Ltd.