纳米体硅鳍形场效应晶体管单粒子瞬态中的源漏导通现象

体硅鳍形场效应晶体管(FinFET)是晶体管尺寸缩小到30 nm以下应用最多的结构,其单粒子瞬态产生机理值得关注.利用脉冲激光单粒子效应模拟平台开展了栅长为30, 40, 60, 100 nm Fin FET器件的单粒子瞬态实验,研究FinFET器件单粒子瞬态电流脉冲波形随栅长变化情况;利用计算机辅助设计(technology computer-aided design, TCAD)软件仿真比较电流脉冲产生过程中器件内部电子浓度和电势变化,研究漏电流脉冲波形产生的物理机理.研究表明,不同栅长Fin FET器件瞬态电流脉冲尾部都存在明显的平台区,且平台区电流值随着栅长变短而增大;入射激光在器件沟道区下方体区产生高浓度电子将源漏导通产生导通电流,而源漏导通升高了体区电势,抑制体区高浓度电子扩散,使得导通状态维持时间长,形成平台区电流;尾部平台区由于持续时间长,收集电荷量大,会严重影响器件工作状态和性能.研究结论为纳米Fin FET器件抗辐射加固提供理论支撑.     

Electro-thermal analysis of non-rectangular FinFET and modeling of fin shape effect on thermal resistance

A novel non rectangular structure of Fin field-effect transistor with the modified channel is introduced as the solution of corner effects. In the proposed FinFET, the top region of fin has cylindrical structure and the bottom region of the fin has a rounded shape. The extended bottom region of fin with a round shape reduces the self-heating effects by distributing the heat from the widespread edges. The top cylindrical region of fin adjusts the corner effects and improves the gate controllability over the channel. The proposed structure with the modified channel which is called MC-FinFET is proven to have better thermal stability, lower hot carrier and self heating effects, improved short channel effects, reduced DIBL and better subthreshold characteristics in comparison with a conventional FinFET. Here, by a thermal conductivity model the effect of fin shape on the thermal resistance and the effective width of the proposed irregular FinFET is analyzed. Moreover, the thermal sensitivity of electro-thermal characteristics in the proposed structure is evaluated with three-dimensional simulations. The superiority of the MC-FinFET is owing to the sharp edges elimination for reducing the self-heating and corner effects. The electro-thermal results demonstrate the ability of MC-FinFET as a higher performance device over the conventional one.     

Influence of gate engineering on the optical characteristics of a double gate FinFET

In this paper, the potential benefit of short channel triple material double gate (TM-DG) FinFET on the optical performance characteristics considering quantum mechanical effects has been theoretically examined and analyzed. The device characteristics are obtained from the self-consistent solution of 3D Poisson–Schrödinger equation using Leibmann's iteration method and provided the reasons for improved performance. The drain and transfer characteristics, electric field, transconductance and mobility of the device have been estimated and the results were compared with the device simulator results. The effect of different length ratios of three channel regions related to three different materials of TM-DG FinFET structure on the optical characteristics have also been discussed. The model is purely a physics based one and overcomes the major limitations of the existing 2D/3D analytical models by providing a more accurate result. The results obtained for dark and illuminated conditions are used to examine the performance of the device for its suitable use as a photodetector.     

Effect of STI-induced mechanical stress on leakage current in deep submicron CMOS devices

The shallow trench isolation (STI) induced mechanical stress significantly affects the CMOS device off-state leakage behaviour. In this paper, we designed two types of devices to investigate this effect, and all leakage components, including sub-threshold leakage ($I_{\rm sub})$, gate-induced-drain-leakage ($I_{\rm GIDL})$, gate edge-direct-tunnelling leakage ($I_{\rm EDT})$ and band-to-band-tunnelling leakage ($I_{\rm BTBT})$ were analysed. For NMOS, $I_{\rm sub}$ can be reduced due to the mechanical stress induced higher boron concentration in well region. However, the GIDL component increases simultaneously as a result of the high well concentration induced drain-to-well depletion layer narrowing as well as the shrinkage of the energy gap. For PMOS, the only mechanical stress effect on leakage current is the energy gap narrowing induced GIDL increase.     

Physical noise model of a uniformly doped nanoscale FinFET photodetector

The noise mechanisms of a uniformly doped nanoscale FinFET photodetector including quantum mechanical effects is investigated theoretically. A numerical model has been developed for computation of different noise components in nanoscale FinFET. The drain current channel thermal noise under illuminated conditions is calculated. The noise parameters of the nanoscale FinFET equivalent circuit are strongly influenced by the incident optical signal and the quantum mechanical effects are found to play a major role in determining the overall noise performance of the device. It also reveals that the operating frequency can be adjusted suitably to make the noise behavior independent of the incident optical power. Other noise components such as Shot noise, thermal noise and diffusion noise have been calculated for the two port FinFET photodetector. Signal-to-noise ratio (SNR), Bit error rate (BER) and noise equivalent power (NEP) has also been calculated.     

A novel nanoscale fin field effect transistor by amended channel: Investigation and fundamental physics

The present paper proposes a new Fin Field Effect Transistor (FinFET) with an amended Channel (AC). The fin region consists of two sections; the lower part which has a rounded shape and the upper part of fin as conventional FinFETs, is cubic. The AC-FinFET devices are proven to have a lower threshold voltage roll-off, reduced DIBL, better subthreshold slope characteristics, and a better gate capacitance in comparison with the C-FinFET. Moreover, the simulation result with three-dimensional and two-carrier device simulator demonstrates an improved output characteristic of the proposed structure due to reduction of self-heating effect. Due to the rounded shape of the lower fin region and decreasing corner effects there, the heat can flow easily, and the device temperature will decrease. Also the gate control over the channel increases due to the narrow upper part of the fin. The paper, thus, attempts to show the advantages of higher performance AC-FinFET device over the conventional one, and its effect on the operation of nanoscale devices.     

Optical effects on the characteristics of GaAs nanoscale FinFET with vertical Gaussian doping profile

In this paper, the optical effects on the characteristics of GaAs FinFET with Gaussian doping profile in the vertical direction of the channel considering quantum mechanical effects (QME) have been theoretically examined and analyzed. The device characteristics are obtained using self-consistent solution of 3D Poisson–Schrödinger equations using interpolating wavelet method and Simpson's one-third rule. This method provides more accurate results by dynamically adjusting the computational mesh and scales the CPU time linearly with the number of mesh points using polynomial interpolation, hence reducing the numerical cost. The results obtained are compared with uniformly doped Si FinFET photodetector characteristics and used to examine the performance of the device for its suitable use as a photodetector in Opto-Electronic Integrated Circuit (OEIC) receivers.     

A study on the performance of metal-oxide-semiconductor-field-effect-transistors with asymmetric junction doping structure

Diode currents of MOSFET were studied and characterized in detail for the ion implanted pn junction of short channel MOSFETs with shallow drain junction doping structure. The diode current in MOSFET junctions was analyzed on the point of view of the gate-induced-drain leakage (GIDL) current. We could found the GIDL current is generated by the band-to-band tunneling (BTBT) of electrons through the reverse biased channel-to-drain junction and had good agreement with BTBT equation. The effect of the lateral electric field on the GIDL current according to the body bias voltage is characterized and discussed. We measured the electrical doping profiling of MOSFETs with a short gate length, ultra thin oxide thickness and asymmetric doped drain structure and checked the profile had good agreement with simulation result. An accurate effective mobility of an asymmetric source–drain junction transistor was successfully extracted by using the split C–V technique.     

超短沟道绝缘层上硅平面场效应晶体管中热载流子注入应力导致的退化对沟道长度的依赖性

随着场效应晶体管(MOSFET)器件尺寸的进一步缩小和器件新结构的引入, 学术界和工业界对器件中热载流子注入(hot carrier injections, HCI)所引起的可靠性问题日益关注. 本文研究了超短沟道长度(L=30–150 nm)绝缘层上硅(silicon on insulator, SOI)场效应晶体管在HCI应力下的电学性能退化机理. 研究结果表明, 在超短沟道情况下, HCI 应力导致的退化随着沟道长度变小而减轻. 通过研究不同栅长器件的恢复特性可以看出, 该现象是由于随着沟道长度的减小, HCI应力下偏压温度不稳定性效应所占比例变大而导致的. 此外, 本文关于SOI器件中HCI应力导致的退化和器件栅长关系的结果与最近报道的鳍式场效晶体管(FinFET)中的结果相反. 因此, 在超短沟道情况下, SOI平面MOSFET器件有可能具有比FinFET器件更好的HCI可靠性.     

Negative capacitance phenomena depending on the wake-up effect in the ferroelectric Si:HfO2 film

Negative capacitance (NC) phenomena is recently suggested as a breakthrough that can lead to the improved transistor by decreasing the subthreshold swing. To understand the NC phenomena, we investigated the effects of the ferroelectric properties such as the remnant polarization depending on the switching cycles in Si-doped HfO₂ thin film capacitor. The ferroelectric properties were controlled by using the wake-up effect, in which the remnant polarization enhances as the number of switching cycles increase. The relation between the wake-up effect and the voltage drop region with the negative differential capacitance were elucidated. The dynamic hysteresis loops were fitted based on Landau-Khalatnikov equation, and the free energy as a function of polarization was obtained. The Landau coefficients showed that the double-well feature of the free energy becomes more apparent due to the wake-up. Based on the wake-up effect on NC phenomena, we show that the NC phenomena is well described by Landau-Ginzburg theory of ferroelectrics.     

Nuclear magnetic resonance for cultural heritage

Nuclear magnetic resonance (NMR) portable devices are now being used for nondestructive in situ analysis of water content, pore space structure and protective treatment performance in porous media in the field of cultural heritage. It is a standard procedure to invert T(1) and T(2) relaxation data of fully water-saturated samples to get "pore size" distributions, but the use of T(2) requires great caution. It is well known that dephasing effects due to water molecule diffusion in a magnetic field gradient can affect transverse relaxation data, even if the smallest experimentally available half echo time tau is used in Carr-Purcell-Meiboom-Gill experiments. When a portable single-sided NMR apparatus is used, large field gradients due to the instrument, at the scale of the sample, are thought to be the dominant dephasing cause. In this paper, T(1) and T(2) (at different tau values) distributions were measured in natural (Lecce stone) and artificial (brick samples coming from the Greek-Roman Theatre of Taormina) porous media of interest for cultural heritage by a standard laboratory instrument and a portable device. While T(1) distributions do not show any appreciable effect from inhomogeneous fields, T(2) distributions can show strong effects, and a procedure is presented based on the dependence of 1/T(2) on tau to separate pore-scale gradient effects from sample-scale gradient effects. Unexpectedly, the gradient at the pore scale can be, in some cases, strong enough to make negligible the effects of gradients at the sample scale of the single-sided device.     

Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices

A comprehensive study of the negative and positive bias temperature instability(NBTI/PBTI)of 3D FinFET devices with different small channel lengths is presented.It is found while with the channel lengths shrinking from 100 nm to 30 nm,both the NBTI characteristics of p-FinFET and PBTI characteristics of n-FinFET turn better.Moreover,the channel length dependence on NBTI is more serious than that on PBTI.Through the analysis of the physical mechanism of BTI and the simulation of 3-D stress in the FinFET device,a physical mechanism of the channel length dependence on NBTI/PBTI is proposed.Both extra fluorine passivation in the corner of bulk oxide and stronger channel stress in p-FinFETs with shorter channel length causes less NBTI issue,while the extra nitrogen passivation in the corner of bulk oxide induces less PBTI degradation as the channel length decreasing for n-FinFETs.The mechanism well matches the experimental result and provides one helpful guide for the improvement of reliability issues in the advanced FinFET process.     

Three-dimensional Monte Carlo simulation of bulk fin field effect transistor

In this paper,we investigate the performance of the bulk fin field effect transistor(FinFET) through a threedimensional(3D) full band Monte Carlo simulator with quantum correction.Several scattering mechanisms,such as the acoustic and optical phonon scattering,the ionized impurity scattering,the impact ionization scattering and the surface roughness scattering are considered in our simulator.The effects of the substrate bias and the surface roughness scattering near the Si/SiO2 interface on the performance of bulk FinFET are mainly discussed in our work.Our results show that the on-current of bulk FinFET is sensitive to the surface roughness and that we can reduce the substrate leakage current by modulating the substrate bias voltage.     

Hot-Carrier Stress Effects on GIDL and SILC in 90nm LDD-MOSFET with Ultra-Thin Gate Oxide

Hot-carrier degradation for 90 nm gate length lightly-doped drain （LDD） NMOSFET with ultra-thin （1.4 nm） gate oxide is investigated under the low gate voltage stress （LGVS） and peak substrate current （Isub max） stress. It is found that the degradation of device parameters exhibits saturating time dependence under the two stresses. We concentrate on the effect of these two stresses on gate-induced-drain leakage （GIDL） current and stress induced leakage current （SILC）. The characteristics of the GIDL current are used to analyse the damage generated in the gate-to-LDD region during the two stresses. However, the damage generated during the LGVS shows different characteristics from that during Isub stress. SILC is also investigated under the two stresses. It is found experimentally that there is a linear correlation between the degradation of SILC and that of threshold voltage during the two stresses. It is concluded that the mechanism of SILC is due to the combined effect of oxide charge trapping and interface traps for the ultra-short gate length and ultra-thin gate oxide LDD NMOSFETs under the two stresses.     

Macroscopic background gradient and radiation damping effects on high-field PGSE NMR diffusion measurements

The effects of macroscopic background gradients due to susceptibility differences at the sample interfaces and of radiation damping on pulsed-gradient spin-echo (PGSE) experiments are examined. Both phenomena can lead to the seemingly strange effect of the echo signal growing as the gradient strength increases at low applied gradient strengths. For a freely diffusing species, background gradients manifest themselves as slight concave or convex inflections in the linearized PGSE attenuation curve, depending on the polarity of the applied gradient. The various means of overcoming macroscopic background gradient problems, including bipolar gradients, and their efficacy are examined experimentally and discussed. The effects of radiation damping can also result in the attenuation curve being nonlinear but, different from the effect of background gradients, the nonlinearity does not change with the polarity of the applied gradient. The vulnerability of the stimulated echo-based PGSE sequence and variations of Hahn-based PGSE sequences is investigated. Both background gradients and radiation damping have serious implications for accurate diffusion measurement determination.     

Electric control of emergent magnonic spin current and dynamic multiferroicity in magnetic insulators at finite temperatures

Conversion of thermal energy into magnonic spin currents and/or effective electric polarization promises new device functionalities. A versatile approach is presented here for generating and controlling open circuit magnonic spin currents and an effective multiferroicity at a uniform temperature with the aid of spatially inhomogeneous, external, static electric fields. This field applied to a ferromagnetic insulator with a Dzyaloshinskii–Moriya type coupling changes locally the magnon dispersion and modifies the density of thermally excited magnons in a region of the scale of the field inhomogeneity. The resulting gradient in the magnon density can be viewed as a gradient in the effective magnon temperature. This effective thermal gradient together with local magnon dispersion result in an open-circuit, electric field controlled magnonic spin current. In fact, for a moderate variation in the external electric field the predicted magnonic spin current is on the scale of the spin (Seebeck) current generated by a comparable external temperature gradient. Analytical methods supported by full-fledge numerics confirm that both, a finite temperature and an inhomogeneous electric field are necessary for this emergent non-equilibrium phenomena. The proposal can be integrated in magnonic and multiferroic circuits, for instance to convert heat into electrically controlled pure spin current using for example nanopatterning, without the need to generate large thermal gradients on the nanoscale.     

纳米尺度金属-氧化物半导体场效应晶体管沟道热噪声模型

随着CMOS工艺的发展,热载流子效应对沟道热噪声的影响随着器件尺寸的降低而增大,传统热噪声模型未能准确表征沟道的热噪声.本文通过解能量平衡方程,得到电子温度表达式,并结合沟道漏电流表达式,建立了沟道热噪声模型.利用建立的电子温度表达式,该热噪声模型考虑了热载流子效应的影响,并且在计算热噪声的过程中考虑了电子温度对迁移率降低的影响以及温度梯度对热噪声的影响.通过分析与计算,结果显示,随着器件尺寸的减小,温度梯度对电子温度产生显著影响,使得热载流子效应的影响增大,热载流子效应对热噪声的增长作用超过了迁移率降低对热噪声的减小作用,最终导致热噪声增大.本文建立的沟道热噪声模型可应用于纳米尺寸金属-氧化物半导体场效应晶体管器件的噪声性能分析及建模.     

A new nanoscale and high temperature field effect transistor: Bi level FinFET

In this paper, we propose a new Bi Level Fin Field Effect Transistor (BL-FinFET) where the fin regions consist of Bi level. The novel features of the BL-FinFET are simulated and compared with a Conventional FinFET (C-FinFET). The three-dimensional and two-carrier device simulation demonstrate that the application of Bi level to the FinFET structure results in an ideal threshold voltage roll-off, reduced DIBL, excellent behavior in voltage gain at high temperatures and the gate capacitance improvement when compared with the C-FinFET. Also, this paper illustrates the benefits of the high performance BL-FinFET device over the conventional one and expands the application of Silicon on Insulator Metal Oxide Semiconductor Field Effect Transistors (SOI MOSFETs) to high temperature.     

Polarization effects and performance of fiber optic recirculating loops

Polarization effects such as PMD and PDL in a straight-line optical fiber communication system are random due to the random birefringence of optical fiber. However, since there is periodicity in a fiber recirculating loop, the polarization effects are quite different than in a straight line. Theoretically and experimentally we analyze the polarization effects in a loop and their effect on performance and the evolution of the state of polarization of a channel. Using this analysis, we are able to better understand the physical impact of the evolution of the state of polarization of a channel on performance. We show that loop-synchronous polarization scrambling is an effective way of breaking this periodicity in an attempt to make the recirculating loop perform more like a straight-line system.     

Shaping of focal field with controllable amplitude,phase, and polarization

We propose a method for configuring the distribution of amplitude, phase, and polarization in the focal region of vector beams. The polarization and phase of incident beam is spatially tailored so that it can produce a focal field that has elaborately prescribed shapes. Our work focuses on the design of a special focus structure with two oval rings, wherein a phase gradient and polarization gradient exist in the inner and outer rings, respectively. The incident light yielding the desired focal field is determined based on an iterative scheme involving vectorial diffraction calculations and fast Fourier transforms. Simulations and experiments demonstrate the generation of a focal field with phase and polarization gradients, which may find applications in optical manipulation.