Electrical and thermal properties of Ge40S60 films

Films of the composition Ge₄₀S₆₀ have been studied in the temperature range of 313–423 K for electrical conductivity, and 293–373 K for thermal conductivity. The dc conductivity results indicate a single value activation energy of 0.863 eV for the conductivity in the applied temperature range. The thermal conductivity coefficient increases linearly with temperature at a thickness of d=0.311 cm. It was found that the investigated samples show a memory effect. The threshold switching voltage was found to increase linearly with film thickness. Moreover, the threshold voltage decreases exponentially with temperature. The data are analysed using a thermal model for the switching process.     

Anomalous vortex dynamics in

We report on measurements of current–voltage (I–V) characteristics for YNi₂B₂C single crystals with weak pinning in various fields at 7.6 K. We find nonmonotonic, N-shaped I–V curves in a certain field region deep in the vortex solid phase. This behavior is anomalous, since there exists an intermediate I region where flow voltage V shows a decrease with increasing I (a driving force). While the exact nature remains unknown, this phenomenon suggests vortex motion (driving I) induced pinning.     

Resistance switching effect in LaAlO3/Nb-doped SrTiO3 heterostructure

The authors report on the fabrication and electronic transport property of LaAlO₃/Nb-doped SrTiO₃ heterostructure. The current–voltage curves of this heterostructure show hysteresis and a remarkable resistance switching behavior, which increase dramatically with decreasing temperature. Multiresistance states were realized by voltage pulses with different amplitudes and polarities and the ratio of the electrical pulse induced resistance change is larger than 10⁴. More interestingly, the relaxation of junction current after switching follows the Curie–von Schweidler law J∝t ⁻ⁿ with an exponential increase of n with temperature. The results were discussed in terms of the trap-controlled space charge limited conduction process via defects near the interface of the heterostructure.     

Mechanism for NonlinearI – V Behaviour and the Temperature Dependence of Threshold Switching in the Se-Te-Sn System

The nonlinearI – V behaviour and threshold switching of the bulk Se-Te-Sn system have been experimentally studied at various temperatures. It is observed that the curves are linear for low voltages and become superlinear at higher voltages. After a certain voltageV _th, the current through the material shoots to a very high value and the potential across the material drops to a low value. It is also found that there is a decrease in Vh with increase in percentage of tin and temperature. An attempt is made to explain the nonlinearI – V behaviour and threshold switching on the basis of a microcrystallite model. A study of Se-Te-Sn system reveals that our results are in concurrence with the theoretical predictions.     

Electrical properties of doped 3-tetradecylpolypyrrole/metal devices

The electrical properties of devices made of doped 3-tetradecylpolypyrrole (PPy-C₁₄) thin films sandwiched between indium-tin-oxyde (ITO) and gold metal electrodes are reported. The current density–voltage (J–V) curves are asymmetric and nonlinear implying a non Ohmic rectifying contact. Using standard thermionic emission theory (Schottky) J–V characteristics were satisfactorily fitted with a saturation current of J₀=1.5×10^-5 A cm^-2, a barrier height of ϕ_b=0.7 eV, and an ideality factor of n=5.3. Characteristics from the plot of J–V versus 1/T show that the activation energy of the thermionic emission process is higher below the glass transition temperature of PPy-C₁₄ (T_g=45 °C) than above, which seems to indicate that the hopping conduction process is enhanced at T>T_g. The carrier concentration has been calculated from capacitance–voltage (C-V) measurements (N=1.9×10¹⁷ cm^-3) allowing estimation of the carrier mobility μ=2.6×10^-2 cm² V^-1 s^-1. PACS 73.61.Ph; 73.40.Sx; 73.30.+y     

Short single-mode CO2 laser pulse generation by pulsed Q-switching

A simple method for the generation of short, single-mode CO₂ laser pulses produced by applying two voltage gates (of amplitude 3U_λ/4 and U_λ/4) to an electro-optic Q-switch placed in a three-mirror cavity is proposed. Single, single-mode, well-synchronizable pulses of 3 ns duration and of 3 mJ energy have been experimentally achieved from a TEA CO₂ laser with an intracavity Pockels cell with 3 ns switching time. Using a numerical simulation it is shown that with shorter switching time (≈1 ns) the method enables one to obtain, from such a laser, a single, megawatt pulse of 1 ns duration.     

Memory characteristics of platinum nanoparticle-embedded MOS capacitors

The capacitance characteristics of platinum nanoparticle (NP)-embedded metal–oxide–semiconductor (MOS) capacitors with gate Al₂O₃ layers are studied in this work. The capacitance versus voltage (C–V) curves obtained for a representative MOS capacitor exhibit flat-band voltage shifts, demonstrating the presence of charge storages in the platinum NPs. The counterclockwise hysteresis and flat-band voltage shift, observed from the C–V curves imply that electrons are stored in a floating gate layer consisting of the platinum NPs present between the tunneling and control oxide layers in the MOS capacitor and that these stored electrons originate from the Si substrate. Moreover, the charge remains versus time curve for the platinum NP-embedded MOS capacitor is investigated in this work.     

Application of BaF2-B2O3-GeO2-SiO2 glasses to metal-oxide-silicon field-effect transistors

The capacitance and voltage characteristics of field effect transistors passivated by BaF₂-B₂O₃-GeO₂-SiO₂ glasses with various water contents were investigated. As the OH absorption coefficients of the glass increased, adverse effects on the recovery of hysteresisC-V curve shifts was seen. The water content is related to the fluoride content of the BaF₂–B₂O₃–GeO₂–SiO₂ glass. The viscous flow point of the glass was lowered with increasing ionic character obtained from Hannay's equation. The source-drain current and voltage (I-V) characteristics of typical enhancement and depletion mode field effect transistors passivated with these glasses were investigated.     

Electrical characteristics of a metal–insulator–semiconductor memory structure containing Ge nanocrystals

A metal–insulator–semiconductor structure device with Ge nanocrystals in SiO₂ was synthesized and the electrical characteristics were investigated. Capacitance–voltage (C–V) curves show hysteresis and the measurements indicate that the device has charge storage effects and stores more holes than electrons. For decreasing measurement frequencies from 1 MHz to 500 Hz, both branches of the C–V hysteresis shift in the positive voltage direction. The slope of the left flank of the C–V hysteresis curve becomes stretched out with decreasing frequency. The slope of the right one appears frequency independent, while there is a small hump/step on the right flank of the C–V hysteresis curve for the lower frequency cases (500 Hz and 1 kHz). The role of Si/SiO₂ interface states is discussed.     

Electrical switching behavior of bulk As–Te–Si glasses: composition dependence and topological effects

The current–voltage characteristics and electrical switching behavior of bulk As₃₀Te_70-xSi_x (2x22) and As₄₀Te_60-xSi_x (2x17) glasses have been investigated over a wide range of compositions. The glasses studied have been found to exhibit a current-controlled negative-resistance behavior and memory switching. Further, the switching voltage (V_t) is found to increase linearly with sample thickness in the range of 0.15 mm to 0.45 mm, and it decreases linearly with temperature (300–353 K). It is also observed that the variation of the switching voltage V_t of As–Te–Si glasses exhibits a sharp slope change at an average coordination number r=2.46 (for both tie lines), which is associated with the rigidity percolation in the system. Further, a minimum is seen in the switching voltage V_t at an average coordination number r=2.66, which is likely to be the chemical threshold of the system. PACS 71.55.Jv; 72.20.Ht; 72.80.Ng; 73.61.Jc; 77.80.Fm; 78.66.Jg     

A Pulsed-Periodic, Low-Pressure Volume Discharge in Chlorine and in a Xenon/Chlorine Mixture

The electrical and optical characteristics of a self-initiated, low-pressure, pulsed-periodic discharge in chlorine and in a xenon/chlorine mixture are investigated. A volume discharge not bounded by dielectric walls was triggered in a spherical anode–plane cathode system of electrodes on supply of a constant positive-polarity voltage to the anode. The discharge existed in the form of a unit domain. The spatial, spectral (in the range 150–350 nm), and time characteristics (voltage, current, and photocurrent of total radiation of plasma in the spectral range 200–700 nm) of the volume discharge are investigated. Optimization of the pressure and of the structure of the working medium is carried out to obtain the maximum brightness of UV–VUV radiation of the bands of the Cl₂(D–A), Cl₂ ^**, and XeCl(D, B–X) molecules. The results obtained are of interest for being used in a pulsed-periodic, excimer-halogen low-pressure lamp.     

High speed in spin‐torque‐based magnetic memory using magnetic nanocontacts

Magnetization switching by a spin‐polarized current in perpendicular anisotropy devices with magnetic nanocontact (NC) is investigated using a micromagnetic formalism. The critical switching current (i_cr) and switching time (τ₀) can be reduced when a soft layer is exchange coupled to the NC. The study reveals that devices with fewer NCs have smaller i_cr compared to those with a large number. Furthermore, τ₀ for nanoconstricted devices is almost constant with anisotropy field (H_k), in contrast to devices without NCs that show an exponential increase with H_k. This suggests that nanoconstricted devices could be used to improve thermal stability, while reducing i_cr and τ₀. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Chopped InGaAs/InP quantum wells for a polarization-independent space switch at 1.53 μm

We realized a polarization-independent Mach–Zehnder interferometric switch at 1.53 μ m using chopped quantum wells. The calculated electroabsorption and electrorefraction agree well with experiment. The window for polarization-independent switching within 0.1 V is 12 nm. A phase shifting section of 1.7 mm yields a < 1dB electroabsorption unbalance and a 6 V switching voltage.     

Thepin structure employed as current amplifier

Injection of excess carriers into thei region of a forward biasedpin diode diminishes proportionally its resistivity (primary circuit). Resistivity variations in thei region are used to control higher currents and powers in the secondary circuit. This basic idea is developed quantitatively for a simplified symmetrical model of thepin structure in a stationary regime and then generalized for the asymmetrical case. The frequency characteristics of the electronic device are studied. For demonstration of the theoretical results thepin structure in silicon with known parameters is used.Notation 2d [m] length ofi region - D [m² s^–1] ambipolar diffusion constant - e [C] electron charge - E ₂ [Vm^–1] electric field strength iny direction - i ₁ [Am^–2] current density inx direction - i ₂ [Am^–2] current density iny direction - i _m [Am^–2] current density due to recombination of carriers ini region - i _1ef ,i _2ef [Am^–2] effective values of currentsi ₁,i ₂ - i _ns ,i _ps [Am^–2] saturated current densities from the heavily dopedn, p regions - i intrinsic region - I [A] total current throughp-n junction - I ₁ [A] total current in pin diode - I ₂ [A] current in secondary circuit - k[J grad^–1] Boltzmann's constant - L=(D) [m] ambipolar diffusion length of carriers in middle region - n(x) [m^–3] excess electron concentration in middle region - ¯n [m^–3] average value of electron concentration in middle region - n _i [m^–3] intrinsic electron concentration - n _A [m^–3] acceptor concentration inp region - n _D [m^–3] donor concentration inn region - p(x) [m^–3] excess hole concentration in middle region - q [m²] area of electrodes 3 and 4 - Q [C] charge stored ini region - R [m^–3 s^–1] recombination rate - s [m] width of diode - t [m] thickness of diode - T [K] absolute temperature - U [V] voltage acrossp-n junction - U ₁ [V] voltage acrosspin diode - U ₂ [V] voltage across terminals of secondary circuit - U _m [V] voltage drop acrossi region - V _D [V] voltage drop acrossn — i andp — i junctions at zero load - W ₁ [W] power inpin diode circuit - W ₂ [W] power in secondary circuit - x [m] distance from center of diode - coefficient in current amplification factor - [rad] phase shift of diode current with respect to applied voltage - [s] life time of excess carriers ini region - [m² V^–1 s^–1] carrier mobility ini region in the symmetrical model - _n [m² V^–1 s^–1] electron mobility ini region - _p [m² V^–1 s^–1] hole mobility ini region - [^–1 m^–1] conductivity     

Switching effects in composite films based on the conjugated polymer polyfluorene and ZnO nanoparticles

The S- and N-shaped current—voltage characteristics have been studied for composite films of the conjugated polymer polyfluorene and ZnO nanoparticles deposited onto Al and In₂O₃/SnO₂ electrodes with and without an intermediate sublayer of the conducting polymer PEDT/PSS. The differences in the current— voltage characteristics of the systems (the N- and S-types, respectively) are interpreted using the electro-thermal switching model, which takes into account the structural and electric properties of PEDT/PSS. The switching provides both alignment of polymer molecules and tunneling of charge carriers, which leads to an increase in conductivity. The current flow in this structure causes an increase in temperature of conducting channels; when the temperature reaches certain levels, the conductivity of the channels decreases because the alignment of polymer molecules is upset, which creates an N-shaped form of the current—voltage characteristics.     

Understanding of a-Si:H(p)/c-Si(n) heterojunction solar cell through analysis of cells with point-contacted p/n junction

We fabricated point-contacted a-Si:H(p)/c-Si(n) heterojunction solar cells using patterned SiO₂ and investigated their electrical properties using the light current–voltage (I–V) curve and Suns-V_oc measurements. The light I–V curves showed bias-dependent changes according to the applied voltage in the point-contacted cells, especially in the samples with a long distance between the point-contacted junctions. The Suns-V_oc measurements showed that the bias-dependence of the light I–V curves did not originate from the recombination in the SiO₂/Si or a-Si:H(p)/c-Si(n) interface, but from the series resistances. It is possible to explain the bias-dependent light I–V curve in terms of the conductivity of a-Si:H(p) and difference in the electrical contact properties between a-Si:H(p), ZnO and c-Si(n). These results mean that the electrical properties of the a-Si:H(p) layer and the contact properties with this layer are also critical to obtain a high J_sc and fill factor in n-type based Si heterojunction solar cells.     

The current and capacitance response of radiation-damaged silicon PIN diodes

The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of silicon p–i–n diodes have been investigated both prior to and after radiation-induced damage by 1 MeV neutrons. The results have been analysed and several rates of damage evaluated. The indication is mainly that radiation damage occurs only up to certain fluencies. Beyond these, the material becomes resistant to further damage. Thus, initial heavy radiation damage can be used to achieve radiation-hardness of detector diodes. This result is contrary to previous suggestions that continued irradiation renders the detectors inoperable but is in good agreement with our results on radiation-hardness induced by gold-doping.     

Characterization of N-doped ZnO layers grown on (0 0 0 1) GaN/Al2O3 substrates by molecular beam epitaxy

We investigated the optical properties and electrical properties of N-doped ZnO layers grown on (0 0 0 1) GaN/Al₂O₃ substrates by molecular beam epitaxy, employing 10 K photoluminescence (PL) measurements, current–voltage (IV) measurements, capacitance–voltage (CV) measurements, and 100 K photocapacitance (PHCAP) measurements. 10 K PL spectra showed that excitonic emission is dominant in N-doped ZnO layers grown after O-plasma exposure, while overall PL emission intensity is significantly reduced and deep level emission at around 2.0 2.2 eV is dominant in N-doped ZnO layers grown after Zn exposure. IV and CV measurements showed that N-doped ZnO layers grown after Zn exposure have better Schottky diode characteristics than O-plasma exposed samples, and an N-doped ZnO layer grown at 300 °C after Zn exposure has best Schottky diode characteristics. This phenomenon is presumably due to lowered background electron concentration induced by the incorporation of N. PHCAP measurements for the N-doped ZnO layer revealed several midgap trap centers at 1.2 1.8 eV below conduction band minimum.     

Room-temperature observation of current bistability and fine structures in germanium quantum dots/SiO2 resonant tunneling diodes

The steady-state and time-dependent current–voltage (I–V) characteristics are experimentally investigated in Ge quantum dot (QD)/SiO₂ resonant tunneling diodes (RTDs). Ge QDs embedded in a SiO₂ matrix are naturally formed by thermal oxidation of Si_0.9Ge_0.1 nanowires (30 nm×50 nm) on silicon-on-insulator substrates. The average dot size and spacing between dots are 9±1 and 25 nm, respectively, from TEM observations, which indicate that one or two QDs are embedded between SiO₂ tunneling barriers within the nanowires. Room-temperature resonant oscillation, negative differential conductance, bistability, and fine structures are observed in the steady-state tunneling current of Ge-QD/SiO₂ RTDs under light illumination. Time-dependent tunneling current characteristics display periodic seesaw features as the Ge-QDs RTD is biased within the voltage regime of the first resonance peak while they exhibit harmonic swing behaviors as the RTD is biased at the current valleys or higher-order current peaks. This possibly originates from the interplay of the random telegraph signals from traps at the QD/SiO₂ interface as well as the electron wave interference within a small QD due to substantial quantum mechanics effects.     

XOR gate response in a mesoscopic ring with embedded quantum dots

We address XOR gate response in a mesoscopic ring threaded by a magnetic flux . The ring, composed of identical quantum dots, is symmetrically attached to two semi-infinite one-dimensional metallic electrodes and two gate voltages, viz, V_a and V_b, are applied, respectively, in each arm of the ring which are treated as the two inputs of the XOR gate. The calculations are based on the tight-binding model and the Green’s function method, which numerically compute the conductance–energy and current–voltage characteristics as functions of the ring-electrodes coupling strengths, magnetic flux and gate voltages. Quite interestingly it is observed that, for =₀/2 (₀=ch/e, the elementary flux-quantum) a high output current (1) (in the logical sense) appears if one, and only one, of the inputs to the gate is high (1), while if both inputs are low (0) or both are high (1), a low output current (0) appears. It clearly demonstrates the XOR behavior and this aspect may be utilized in designing the electronic logic gate.