Electron tunneling through double-electric barriers on HgTe/CdTe heterostructure interface

We investigate theoretically the carrier transport in a two-dimensional topological insulator of (001) HgTe/CdTe quantum-well heterostructure with inverted band, and find distinct switchable features of the transmission spectra in the topological edge states by designing the double-electric modulation potentials. The transmission spectra exhibit the significant Fabry-Pérot resonances for the double-electric transport system. Furthermore, the transmission properties show rich behaviors when the Fermi energy lies in the different locations in the energy spectrum and the double-electric barrier regions. The opacity and transparency of the double-modulated barrier regions can be controlled by tuning the modulated potentials, Fermi energy and the length of modulated regions. This electrical switching behavior can be realized by tuning the voltages applied on the metal gates. The Fabry-Pérot resonances leads to oscillations in the transmission which can be observed in experimentally. This electric modulated-mechanism provides us a realistic way to switch the transmission in edge states which can be constructed in low-power information processing devices.     

Bias Dependence in Spin-Polarized Tunneling of Ferromagnet/Ferromagnetic Insulator (Semiconductor)/Ferromagnet Junctions

Based on the nearly-free-electron approximation, the bias dependencies of electron transport properties of ferromagnet/ferromagnetic insulator (semiconductor)/ferromagnet junctions have been studied. Resonances appear in electron transmission probability. These resonances cause oscillations in the zero-temperature tunnel current and the resonances occur in tunnel conductance. Tunnel magnetoresistance (TMR) is an oscillatory function of bias. The TMR can reach a value as high as 100%. The bins dependencies of electron transport properties relate to the magnetic configurations of the junctions.     

Charge transport in the normal metal/diffusive ferromagnet/s-wave superconductor junctions

Charge transport in the normal metal/insulator/diffusive ferromagnet/insulator/s-wave superconductor (N/I/DF/I/S) junctions is studied for various situations solving the Usadel equation under the Nazarov's generalized boundary condition. Conductance of the junction is calculated by changing the magnitude of the resistance in DF, Thouless energy in DF, the exchange field in DF, the transparencies of the insulating barriers. We have found a new broad peak around zero voltage as well as zero bias conductance peak splitting and dip splitting.     

Propagation of surface plasmon polaritons in anisotropic MIM and IMI structures

Electromagnetic wave propagation through waveguide structures consisting of anisotropic dielectric layers, assisted by surface plasmon-polaritons (SPPs) is theoretically studied. Dispersion relations corresponding to both short range and long range coupled SPP modes in metal/insulator/metal (MIM) and insulator/metal/insulator (IMI) structures, taking into consideration the anisotropy of the insulator, are derived and numerically solved. The dispersion has a prominent dependence on the anisotropy of the dielectric environment. The dependence of propagation on the misalignments of the optic axes of the insulator has also been investigated.     

Infrared spectroscopic studies of GdBaCo2O5.5

This paper reports infrared spectroscopic studies on GdBaCo₂O_5.5 layered perovskite which exhibits successive magnetic transitions from paramagnetic to ferromagnetic to antiferromagnetic states as well as high-temperature metal to insulator transition and a change in charge transport mechanism at low temperature. Infrared absorption spectra recorded at various temperatures in the range 80–350 K reveal changes in the positions of Co–O stretching and bending frequencies which provide an explanation to the magnetic and transport behaviour of this compound.     

Hydrostatic-Pressure-Induced Reentrance of the Metallic State in the κ-(ET)2Hg(SCN)2Cl Quasi-Two-Dimensional Organic Conductor

On cooling below 30 K, the κ-(ET)₂Hg(SCN)₂Cl quasi-two-dimensional organic metal, which is in the quantum spin liquid state at liquid helium temperatures, undergoes a transition to the Mott insulator state. The application of a hydrostatic pressure p = 0.7 kbar stabilizes the metallic state and makes it possible to study the behavior of the interlayer magnetoresistance at liquid helium temperatures. The field dependence of the magnetoresistance exhibits an unlimited power-law growth, which indicates that the polaron mechanism contributes to the interlayer transport. The spectrum of observed magnetoresistance oscillations corresponds to the Fermi surfaces characteristic of conducting layers with the κ-type structure.

     

Shubnikov-de Haas oscillations in a new dual-layered quasi-two-dimensional organic metal (BETS)4CoBr4(C6H4Cl2)

The interlayer and intralayer resistances and Shubnikov-de Haas oscillations in a new dual-layered quasi-two-dimensional organic metal (BETS)₄CoBr₄(C₆H₄Cl₂) with a periodically varying structure of cation layers have been studied. It has been shown that the interlayer resistivity corresponds to an incoherent or weakly incoherent transport regime. The oscillations of the magnetoresistance have been described by a model of a chain of coherent magnetic breakdown orbits taking into account the quantum interference effect. The behavior of the interlayer transport, as well as quantum oscillations, is in good agreement with the theoretical calculations of the band structure.     

Charge interaction in layered systems with spatial dispersion

The potential electrostatic energy of a charge near the surface of a metal with a metal or a dielectric coating (adsorbate), on the interface between metal (semimetal) and insulator (electrolyte) and in layered thin-film sandwich-type systems (MIS structures) has been calculated. The influence of the metal and the dielectric epitaxial coatings of the metal surface upon the interaction of charges is investigated. Taking into account the spatial dispersion effects, it is shown that in thin films surrounded by a medium with a large dielectric constant, the Coulomb repulsion between electrons decreases.     

Finite size effect and phase diagram of ultra-thin La0.7Sr0.3MnO3

La_0.7Sr_0.3MnO₃ (LSMO) ultra-thin films have been grown by pulsed laser deposition in conditions optimized for cation stoichiometry and bulk-like physical properties in the thick limit. Through electrical transport and magnetic measurements, a phase diagram is constructed as a function of film thickness. With decreasing thickness, the LSMO films cross over at high temperatures from a paramagnetic metal to a paramagnetic insulator, and at low temperatures from a ferromagnetic metal to a ferromagnetic insulator, in close similarity to that observed for varying the electronic bandwidth in bulk manganites.     

Principles of Adaptive Optics, 3rd edn., by Robert K. Tyson

A review is made of the quantum effects which are observed in the transport coefficients of semiconductors. Quantization of the free carriers in semiconductors is produced whenever an external potential acts on an otherwise uniform and perfect crystal. Typical examples are a magnetic field, an electric field or the physical boundaries of the sample. A magnetic field quantizes the electron and hole states into a ladder of equally spaced Landau levels. This gives rise to the Shubnikov–de Haas, magnetophonon and magneto-impurity effects, where the positions of the Landau levels resonate with the Fermi, phonon, or impurity energies present in the sample. A series of oscillations in the magneto-resistance of many different types of materials results. Electric fields applied to the surface of metal oxide semiconductor (MOS) devices result in a set of quantum levels for motion perpendicular to the surface. At low temperatures the charge carriers are bound to the surface and behave as if they were two-dimensional. This is shown to give rise to very dramatic oscillatory metal–insulator behaviour in high magnetic fields. Quantization is also shown to occur in very thin layers of semiconductors which act like a simple square well potential, the energy levels of which can be studied as a function of layer thickness. The carriers are confined within the layers, and also show two-dimensional behaviour.     

Imaging nanoscale electronic inhomogeneity in the lightly doped Mott insulator Ca(2-x)NaxCuO2Cl2

The spatial variation of electronic states was imaged in the lightly doped Mott insulator Ca(2-x)NaxCuO2Cl2 using scanning tunneling microscopy or spectroscopy. We observed nanoscale domains with a high local density of states within an insulating background. The observed domains have a characteristic length scale of 2 nm (approximately 4-5a, a: lattice constant) with preferred orientations along the tetragonal [100] direction. We argue that such spatially inhomogeneous electronic states are inherent to slightly doped Mott insulators and play an important role for the insulator to metal transition.     

Influence of annealing atmosphere on the properties of La0.5Sr0.5MnO3

The structure, magnetic and electrical transport properties of La_0.5Sr_0.5MnO₃ annealed in different atmosphere have been investigated. No evident change of structural symmetry and the Curie temperature is observed for the samples. The resistivity at zero magnetic field of the samples annealed in air and nitrogen exhibits a metal–insulator transition, while no metal–insulator transition is observed for the sample annealed in oxygen, and for which the resistivity decreases monotonously with increasing temperature. Surprisingly, when an external magnetic field is applied, a metal–insulator transition appears for the sample annealed in oxygen. It is suggested that the annealing atmosphere affects the competition between FM and AFM phases due to the change of Mn⁴⁺/Mn³⁺ ratio and the oxygen/cation vacancies, and has a great influence on the electrical transport properties of La_0.5Sr_0.5MnO₃.     

Short period magnetic coupling oscillations in Co/Si multilayers: Theory versus experiment

Today the magnetic properties of multilayers and nanostructures including a metal or an insulator as a nonmagnetic spacer layer are rather well understood. But they are much more controversial for semiconductor spacers. For instance, for Co/Si multilayers short period coupling oscillations are predicted by ab initio computations but have yet to be observed. Here we show in Co/Si multilayers prepared at low temperature (90 K) strong saturation field oscillations that are consistent with the predicted coupling oscillations. However, the decay length of the oscillations is much longer than the expected one and cannot be explained within the framework of available theories.     

Model of current oscillations in a metal-thin insulator-semiconductor structure

A model is proposed for current oscillations in a metal-thin insulator-p-type semiconductor structure which are caused by the self-organization of carrier transport processes via insulator states. Zh. Tekh. Fiz. 68, 93–94 (December 1998)     

Metal–insulator transition in boron-doped amorphous carbon films

Boron-doped amorphous graphite-like carbon (GLC) films have been prepared with different boron concentrations. Electrical transport measurements in the temperature range 1.3–300?K on the films shows a doping-induced metal–insulator (MI) transition. On the metallic side of the transition, the experimental data are interpreted in terms of weak localization and the effect of electron–electron interactions. Data on the insulator side of transition are analyzed in terms of hopping conduction. Critical behaviour is observed near the transition, with the resistivity obeying a power-law temperature dependence.     

Observation of π Berry phase in quantum oscillations of three‐dimensional Fermi surface in topological insulator Bi2Se3

We report the quantum transport studies on Bi₂Se₃ single crystal with bulk carrier concentration of ～10¹⁹ cm^–3. The Bi₂Se₃ crystal exhibits metallic character, and at low temperatures, the field dependence of resistivity shows clear Shubnikov–de Haas (SdH) oscillations above 6 T. The analysis of these oscillations through Lifshitz–Kosevich theory reveals a non‐trivial π Berry phase coming from three‐dimensional (3D) Fermi surface, which is a strong signature of Dirac fermions with three‐dimensional dispersion. The large Dingle temperature and non zero slope of Williamson–Hall plot suggest the presence of enhanced local strain field in our system which possibly transforms the regions of topological insulator to 3D Dirac fermion metal state. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Transport properties of topological insulators films and nanowires

The last several years have witnessed the rapid developments in the study and understanding of topological insulators. In this review, after a brief summary of the history of topological insulators, we focus on the recent progress made in transport experiments on topological insulator films and nanowires. Some quantum phenomena, including the weak antilocalization, the Aharonov-Bobm effect, and the Shubnikov-de Haas oscillations, observed in these nanostructures are described. In addition, the electronic transport evidence of the superconducting proximity effect as well as an anomalous resistance enhancement in topological insulator/superconductor hybrid structures is included.     

Establishment of oscillations in multifrequency oscillators

It has been found experimentally that the nature, duration, and result of the establishment of multifrequency oscillations in an oscillator formed by a reflex klystron coupled to a waveguide line depend on the degree of energy competition of the oscillations, which is in turn governed by the choice of working point in the oscillation zone, the interval between the oscillation frequencies, and the ratio of the power levels at these frequencies. The experimental data verify the results of previous calculations and computer simulations; they also demonstrate new effects.     

Josephson Effect in FS/I/N/I/FS Tunnel Junctions

The Bogoliubov de Gennes equation is applied to the study ofcoherence effects in the ferromagnetic superconductor/insulator/normalmetal/insulator/ferromagnetic/superconductor (FS/I/N/I/FS) junction. We calculated the Josephson current in FS/I/N/I/FS as a function of exchange field in ferromagnetic superconductor, temperature, and normal metal thickness. It is found that the Josephson critical current in FS/I/N/I/FS exhibits oscillations as a function of the length of normal metal. The exchange field always suppresses the Josephson critical current I_p for a parallel configuration of the magnetic moments of two ferromagnetic superconductor (FS) electrodes. In the antiparallel configuration, the Josephson critical current I_Ap at the minimum values of oscillation increases with the exchange field for strong barrier strength and at low temperatures.