GaAs／GaAlAs多量子阱反射型光调制器及自电光效应器件

采用分子束外延技术生长含有大周期数的ＧａＡｓ／ＧａＡｌＡｓ多量子阶（ＭＱＷ）及分布布喇格反射器（ＤＢＲ）的ＰＩＮ结构器件。研究了量子限制斯塔克效应（ＱＣＳＥ），分布布喇格反射及非对称腔模（ＡＳＦＰ）效应对光的反射调制作用及这三种效应的兼容性对光调制及逻辑器件的重要影响。给出我们研制的反射型光调制器及自电光效应器件的实验结果。对于常通型及常闭型调制器，其两态衬比度可达１０ｄＢ。所研制的ＳＥＥＤ器件，其导通光能耗低于１０ｆＪ／（μｍ）￣２，实现其光学双稳态及Ｒ－Ｓ光触发器工作。     

薄膜型超导红外(光)探测器

在高Tc GdBaCuO超导薄膜上,采用光刻技术分别制成两种不同结构的辐射、热测量器件及2×4集成阵列式微桥器件红外(光)探测器.探测器芯片安装在STD-3型红外探测器杜瓦冷指上.用黑体及波长为0.6328μm的He-Ne激光器辐照器件,系统观测各种器件的特性,其中最好的结果:在10Hz时的噪音等效功率NEP(500,10,1)=3.6×10^-12 WH_z^1/2;探测率D^*(500,10,1)=1.6×10¹⁰ cmH_z^1/2W^-1;响应率R_v=8.2×103VW^-1.另外,多元串接微桥器件出现的多台阶式的特性,可望在红外探测计量及高频方面获得重要应用.     

飞秒光纤激光器

我们利用同步泵浦光纤喇曼环形激光器在1.396μm处得到195fs 的光脉冲,并利用时间-色散调谐技术在1.396μm附近实现了47nm 的波长调谐.我们采用1.313μm的 Nd:YLF 锁模脉冲泵浦,其喇曼光处于单模光纤的负色散区,利用孤子效应得到195fs 的光脉冲.实验中我们采用一台 Nd:YLF(Quantronix Model 4216d)激光器作泵浦源,输出波长为1.313μm,主动锁模时输出脉宽约50ps.泵浦光经一枚双色镜反射后耦合进光纤.测试中使用的单模光纤是普通通讯用单模石英光纤.其零色散波长在1.305μm,芯径约为9.5μm.由于喇曼效应的作用,在光纤中产生1.395μm左右的喇曼光.喇曼光从光纤出来后经透镜准直、延迟后穿过双色镜反馈回光纤,其中一部分被反射作为输出.用 PIN 来监测泵浦脉冲与喇曼光脉冲的同步情况,并调节延迟线达到同步泵浦的要求.     

InGaAsP分别限制量子阱激光器

长波长InGaAsP量子阱激光器,以其低阈值、窄光谱线宽和高的调制频带宽等优良特性而成为大容量通信的基础。为此,我们利用低压MOVCD技术生长了1.62μm和1.3μm的InGaAsP材料,测得其77K光荧光(PL)谱线半峰高宽分别为18.7meV和28meV.利用X射线双晶衍射测得两种材料的晶格失配度不大于1×10^-3.并生长了四个不同阱宽的InGaAsP/InP量子阱结构,测得77K温度下的PL谱,分析了阱宽对发光波长及半峰宽的影响,并提出在量子阱激光器中减小界面层影响的方法。在此基础上,生长了分别限制量子阱激光器结构,并利用质子轰击制备出条形结构激光器,测得其最低阈值电流为100mA.直流工作光谱峰值波长为1.52μm左右,单面输出外微分量子效率约为36%.     

高Tc超导薄膜约瑟夫逊结光探测研究

我们研制了具有约瑟夫逊效应的高Tc GdBa₂Cu₃O₇-薄膜双晶晶界结,对其交直流约瑟夫逊效应进行了观测,并用其进行光探测,用波长为0.6328μm的He-Ne激光器辐照双晶结结区,系统观测了双晶晶界结的光响应特性,得到的最好结果如下噪音等效功率NEP=1.9×10^-13W,归一化探测率D=53×109cmHz^1/2W^-1,响应率Rv=4.2×10⁷V/W,响应时间τ=4.35×10^-7s.     

栅漏间表面外延层对4H-SiC功率MESFET击穿 特性的改善机理与结构优化

本文提出了一种带栅漏间表面p型外延层的新型MESFET结构并整合了能精确描述4H-SiC MESFET工作机理的数值模型,模型综合考虑了高场载流子饱和、雪崩碰撞离化以及电场调制等效应. 利用所建模型分析了表面外延层对器件沟道表面电场分布的改善作用,并采用突变结近似法对p型外延层参数与器件输出电流(I_ds)和击穿电压(V_B)的关系进行了研究.结果表明,通过在常规MESFET漏端处引入新的电场峰来降低栅极边缘的强电场峰并在栅漏之间的沟道表面引入p-n结内建电场进一步降低电场峰值,改善了表面电场沿电流方向的分布.通过与常规结构以及场板结构SiC MESFET的特性对比表明,本文提出的结构可以明显改善SiC MESFET的功率特性.此外,针对文中给定的器件结构,获得了优化的设计方案,选择p型外延层厚度为0.12 μupm,掺杂浓度为5× 10¹⁵ cm^-3,可使器件的V_B提高33%而保持I_ds基本不变.     

体积全息衍射效率的分析

本文指出对于通过折射率变化来实现相位调制的全息图(无论是漂白后的银盐干版,或DCG版),在通常情况下其相位调制度都较小,不可能发生过调制现象,故拍摄参数选择范围相对较宽。要获得高衍射效率全息照片的关健应放在如何提高干涉项引起的相位调制折射率n₁上。本文还指出当反射全息处於弱布喇格衍射的情况下,再现图象的单色性下降,并存在透射象。     

光纤共振和预共振喇曼光谱

在液芯光纤内产生共振和预共振喇曼效应,喇曼光谱强度可以大幅度提高,最高可达10⁹倍.本文介绍获得光纤(预)共振喇曼光谱的可行性、实验及实验结果.用远离吸收带的激光激发获得了α甲基吡啶预共振喇曼光谱.用小功率激光(0.8mW)、低浓度溶液(9.6×10¹²mol/L)还获得了β叶红素在CS₂中的共振喇曼光谱.     

基于交叉增益调制效应全光波长变换中半导体光放大器增益与变换光脉冲啁啾分析

对于半导体放大器(SOA),由于连续光注入其有效增益降低,本文提出基于SOA交叉增益调制效应(XGM)全光波长变换(AOWC)简化的系统模型,应用此模型详细分析了信号光功率(P_s)、信号光脉宽(t_p)、泵浦电流和探测光功率(P_cw)对于变换光啁啾的影响.     

高Q Kerr介质腔中非关联双模相干态光场与V型三能级原子相互作用系统中光场的等阶Y压缩效应

本文利用多模压缩态理论,详细研究了高Q Kerr介质腔中非关联双模相干态光场与V型三能级原子相互作用系统中双模光场的一次和二次等阶Y压缩效应,结果表明:1)等阶Y压缩特性强烈地依赖于Kerr介质的三阶非线性极化系数(x)和双模光场中各模的平均光子数n¹、n²;当x<1,n¹=n²<1时,不产生等阶Y压缩效应;而当x=2.5、5、10以及n¹=n²=2、5时,光场可呈现出强烈的一次及二次等阶Y压缩效应;2)在x以及n¹、n²相同的条件下,不同压缩阶次的等阶Y压缩效应的时间演化曲线的压缩周期与压缩阶次成反比,压缩度的幅度则随压缩阶数的升高而迅速下降;3)在平均光子不变(即n¹=n²恒定),但Kerr介质不同(即x变化)的条件下,相同压缩阶数的等阶Y压缩效应的Y压缩度曲线的时间演化周期与Kerr介质的三阶非线性化系数x成反比,压缩度的幅度则随Kerr介质的三阶非线性极化系数x的增大而增强;4)等阶Y压缩效应的持续时间以及等阶Y压缩度的大小等强烈地依赖于Kerr介质的非线性程度和光场强度;一般而言,Kerr介质的非线性程度越高(即x越大),并且光场越强(即n¹=n²取值越大),等阶Y压缩效应持续时间就越短,等阶Y压缩度就越大.     

Temperature stabilized optical waveguide modulator

A low drive-voltage optical modulator using a Ti-diffused UNbO₃ optical waveguide has been fabricated. Stabilization against ambient temperature change was realized by using a miniature halfwave plate. The halfwave voltage, 3 dB bandwidth, optical insertion loss and extinction ratio were 3·8 V (at 1·06m wavelength), 850 MHz, 10 dB and 13 dB, respectively. A reduction scheme for the optical absorption caused by metallic electrodes, and an analysis of the modulator high frequency response are also reported.     

Demonstration of single channel 160-Gb/s OTDM 100-km transmission system

A 16 × 10-Gb/s optical time-division-multiplexing (OTDM) 100-km transmission system with home-made multiplexer is demonstrated experimentally. A demultiplexer based on two cascaded electro-absorption modulator (EAM) and a clock recovery unit form a feedback loop. Error-free demultiplexing from 160-Gb/s to 10-Gb/s after over 100-km transmission is achieved. The power penalty is about 3.5 dB with the bit error rate of 10⁻⁹.     

超低压选择区域生长法制备产生10GHz重复率超短光脉冲的级联电吸收调制器与分布反馈激光器单片集成光源

采用超低压(22×１０^２Pa)选择区域生长(selective area growth, SAG)金属有机化学气相沉积(metal-organic chemical vapor deposition, MOCVD)技术成功制备了InGaAsP/InGaAsP 级联电吸收调制器(electroabsorption modulator, EAM)与分布反馈激光器(distributed feedback laser, DFB)单片集成光源的新型光电器件.实验结果表明，采用该技术制备的器件 关键词： 超低压 选择区域生长 集成光电子器件 超短光脉冲     

一种提高基于循环频移器的多载波光源光信噪比的方案

频率锁定多载波光源是实现太比特系统传输的关键器件之一, 目前已成为光纤通信领域的研究热点.基于循环频移技术产生的频率锁定 多载波光源因具有驱动电压低、串扰小、平坦度高的优点而受到重视, 但是其输出质量容易受到调制器固有的高阶谐波串扰的影响,特别是三阶谐波串扰. 为了减小三阶串扰的影响,本文提出了在I/Q调制器两支路上再加载另一频率为3f_m的射频信号的方案, 用其产生的一阶信号来抑制三阶串扰.通过理论分析与数值仿真,得到了载波数为24、 载波间最大功率差小于0.1 dB的多载波光源输出.与未采用三阶串扰抑制方案的结果比较, 光源输出有效光信噪比提高了2 dB. 结果表明,采用本文的改进方案,可以有效地提高多载波光源的输出平坦度和有效光信噪比.     

Temperature characteristics of a Y-cut Z-propagation LiNbO3 light modulator for application to polarimeters

The temperature characteristics of a Y-cut Z-propagation LiNbO₃ crystal light modulator, with manufacturing errors, in the absence and presence of an electric field have been investigated by analyses and experiments. According to our analyses, when the Z-axis of the LiNbO₃ crystal is at an angle of 0.22° with respect to the normal of the input surface of the crystal, we found the theoretical fluctuation of the normalized output-light intensity with temperature to be less than 7:75 × 10⁻⁶/°C. This magnitude is less than 1% of the theoretical intensity fluctuation of a conventional temperature-compensation LiNbO₃ light modulator. The measured temperature characteristics of a prototype of this modulator were 2 × 10⁻⁴/°C in the absence of an electric field (OFF state) and 2:8 × 10⁻⁴/°C in the presence of an external field (ON state). During a running test of longer than 8 hours at room temperature, the intensity fluctuation of this prototype was 0.01% in the OFF state, and 0.07% in the ON state.     

Electroabsorption modulators operating at 1.3 μm on GaAs substrates

This paper describes the growth and device performance of electroabsorption modulators on GaAs substrates operating near 1.3 m, the dispersion minimum for silica fibres. The key to the successful molecular beam epitaxial (MBE) growth of these devices was the incorporation of a linearly-graded buffer layer beneath the InGaAs/AlGaAs multi-quantum-well active layer. Both transmission and reflection modulators are produced. For transmission devices, larger modulation is achieved when the buffer is graded more slowly: The maximum modulation reported was 22% for T/T _O corresponding to a 0.86 dB contrast ratio with an insertion loss of roughly 5 dB at 1.34 m. Antireflection coating a transmission modulator yields a reasonable reflection modulator. However, improved performance is reported for a reflection modulator using a novel technique of integrating the bottom quarter-wave mirror into a buffer with linearly-graded In composition. At 1.33 m, a normally-off reflection modulator with an integrated mirror exhibited a R/R _O of 73%, a constrast ratio of 2.38 dB, and an insertion loss of 4 dB.     

500 MHz LiNbO3 2×2光开关/调制器

本文描述一种采用铬-金电极的Ti:LiN_bO₃型2×2光开关/调制器。给出了该器件的设计参数,工艺条件,带单模尾纤的器件性能为:总插入损耗<8dB,开关电压<10V,串音<-15dB(λ=1.3μm)。本文讨论了器件的高频特性,测得器件的调制频率>500MHz。     

Impact of extinction ratio of single arm sin LiNbO3 Mach-Zehnder modulator on the performance of 10 and 20 Gb/s NRZ optical communication system

We investigate the impact of extinction ratio of single arm sin² LiNbO₃ Mach-Zehnder (MZ) amplitude modulator on the performance of 10 and 20 Gb/s single-channel optical communication system. For different fiber lengths, the system performance has been analyzed with the increase in the extinction ratio. The effect of variation in dispersion parameter has also been illustrated. The impact of extinction ratio (ζ), dispersion parameter and length of the fiber has been further optimized with minimum bit error rate (BER) at optimal decision threshold (10⁻⁹) for 10 and 20 Gb/s bit rate. It is found that the system gives optimum performance at extinction ratio (ζ) value 20 dB. The increase in the transmission distance from 468 km for 10 Gb/s to 532 km for 20 Gb/s has been reported, and 8 dB improvement in the Q value has been observed as the value of ζ is increased from 10 to 20 dB. At 20 Gb/s, the system gives optimum performance for dispersion parameter value only up to 4 ps/nm km; however, at 10 Gb/s the system can operate for dispersion values up to 14.3 ps/nm km. Further we investigate the self-phase modulation (SPM) effect for the increase in the input power. It is observed that the SPM effect is negligible below 3 dB m input power and it increases at higher power levels.     

Compensation of dispersion-induced power fading for highly linear radio-over-fiber link using carrier phase-shifted double sideband modulation

A carrier phase-shifted (CPS) double sideband (DSB) modulation technique in radio-over-fiber (RoF) system is proposed and experimentally demonstrated. By tuning the biases in a single-drive dual parallel Mach-Zehnder modulator (SD-DPMZM), the optical carrier in the DSB spectrum acquires additional phase shift. The transmittance response of a dispersive RoF link is thus being controlled and shifted in the frequency domain. Experiments successfully turned the maximum transmission frequency to 10?GHz and 15?GHz for both 25 and 39?km fiber links. This is also a highly linear scheme, of which a spurious-free dynamic range (SFDR) of 111.3?dB·Hz^2/3 is experimentally obtained.     

DFB lasers with integrated electroabsorption modulator

We present high-performance 1550 nm DFB lasers with butt-coupled, bulk type integrated electroabsorption modulators of good manufacturability and reliability. Key issues in device design are reviewed and the strong influence of the exact detuning between lasing wavelength and modulator bandgap is demonstrated. Fibre-coupled output powers as large as 6 dBm and attenuation efficiencies as high as 12 dB V^–1 are obtained. Butterfly-packaged devices show only 1 dB penalty for 10 Gbit s^–1 NRZ transmission over 50-km standard single-mode fibre (SMF) without the use of an optical amplifier. With an optical booster amplifier, self-phase-modulation in the fibre is exploited and repeaterless 10 Gbit s^–1 transmission is possible over 150-km standard SMF.