Transport properties through double-magnetic-barrier structures in graphene

We study electrons tunneling through a double-magnetic-barrier structure on the surface of monolayer graphene.The transmission probability and the conductance are calculated by using the transfer matrix method.The results show that the normal incident transmission probability is blocked by the magnetic vector potential and the Klein tunneling region depends strongly on the direction of the incidence electron.The transmission probability and the conductance can be modulated by changing structural parameters of the barrier,such as width and height,offering a possibility to control electron beams on graphene.     

Anisotropic Ballistic Transport through a Potential Barrier on Monolayer Phosphorene

We demonstrate theoretically the anisotropic quantum transport of electrons through a single barrier on monolayer phosphorene.Using an effective k·p Hamiltonian,we Bnd that the transmission probability for transport through n-n-n(or n-p-n) junction is an oscillating function of the incident angle,the barrier height,as well as the incident energy of electrons.The conductance in such systems depends sensitively on the transport direction due to the anisotropic effective mass.By tuning the Fermi energy and gate voltage,the channels can be transited from opaque to transparent,which provides us with an efficient way to control the transport of monolayer phosphorene-based microstructures.     

Ferromagnetic barrier-induced negative differential conductance on the surface of a topological insulator

The effect of the negative differential conductance of a ferromagnetic barrier on the surface of a topological insulat（ is theoretically investigated. Due to the changes of the shape and position of the Fermi surfaces in the ferromagnetic barrie the transport processes can be divided into three kinds： the total, partial, and blockade transmission mechanisms. The bias voltage can give rise to the transition of the transport processes from partial to blockade transmission mechanisms, which results in a considerable effect of negative differential conductance. With appropriate structural parameters, the currenl voltage characteristics show that the minimum value of the current can reach to zero in a wide range of the bias voltag and then a large peak-to-valley current ratio can be obtained.     

Electron Transport of an Impurity Quantum Wire Under THz Electromagnetic Field Illumination

We theoretically investigate the effect of a single finite-size attractive impurity on the electron transport of a semiconductor quantum wire under the influence of a terahertz electromagnetic field illumination. In the freeparticle framework, the time-dependent electronic states are obtained by introducing an unitary transformation,and the electronic transmission of the system is obtained by using the scattering matrix approach. In the case of the field frequency resonant with the lateral energy spacing of the two lowest levels, a step-like structure for the transmission probability versus the total electron energy is predicted. Furthermore, due to the interplay between the single impurity and the applied field, the transmission probability curve in the non-resonant case shows a structure of a resonance dip on the interference pattern background with certain parameters of the impurity.     

Modeling of a Silicon Nanowire pH Sensor with Nanoscale Side Gate Voltage

A silicon nanowire （Si-NW） sensor for pH detection is presented. The conductance of the device is analytically obtained, demonstrating that the conductance increases with decreasing oxide thickness. To calculate the electrical conductance of the sensor, the diffusion-drift model and nonlinear Poisson-Boltzmann equation are applied. To improve the conductance and sensitivity, a Si-NW sensor with nanoscaie side gate voltage is offered and its characteristics are theoretically achieved. It is revealed that the conductance and sensor sensitivity can be enhanced by adding appropriate side gate voltages. This effect is compared to a similar fabricated structure in the literature, which has a wire with a rectangular cross section. Finally, the effect of NW length on sensor performance is investigated and an inverse relation between sensor sensitivity and NW length is achieved.     

Tunneling Negative Magnetoresistance via δ Doping in a Graphene-Based Magnetic Tunnel Junction

We investigate the tunneling magnetoresistance via S doping in a graphene-based magnetic tunnel junction in detail.It is found that the transmission probability and the conductance oscillates with the position and the aptitude of the 5 doping.Also,both the transmission probability and the conductance at the parallel configuration are suppressed by the magnetic field more obviously than that at the antiparallel configuration,which implies a large negative magnetoresistance for this device.The results show that the negative magnetoresistance of over 300% at B=1.0 T is observed by choosing suitable doped parameters,and the temperature plays an important role in the magnetoresistance.Thus it is possible to open a way to effectively manipulate the magnetoresistance devices,and to make a type of magnetoresistance device by controlling the structural parameter of the δ doping.     

Interlayer transport of an electron in bilayer graphene with phonon-induced lattice distortion in the presence of biased potential

The interlayer transport of an electron in bilayer graphene influenced by a phonon in the presence of a biased potential is investigated using the tight-binding approach. The in-plane optical mode E2g and out-of-plane optical mode B1g associated with the applied biased potential are considered to compute and discuss the interlayer transport probability of an electron initially localized on the bottom layer at the Dirac point in the Brillouin zone. Without the biased potential, the interlayer transport probability is equal to 0.5 regardless of the phonon displacement except for a few special cases. Applying a biased potential to the layers, we find that in different phonon modes the function of the transport probability with respect to the applied biased potential and phonon displacement is complex and various, but on the whole the transport probability decreases with the increase in the absolute value of the applied biased potential. These phenomena are discussed in detail in this paper.     

Electron tunneling in single layer graphene with an energy gap

When a single layer graphene is epitaxially grown on silicon carbide,it will exhibit a finite energy gap like a conventional semiconductor,and its energy dispersion is no longer linear in momentum in the low energy regime.In this paper,we have investigated the tunneling characteristics through a two-dimensional barrier in a single layer graphene with an energy gap.It is found that when the electron is at a zero angle of incidence,the transmission probability as a function of incidence energy has a gap.Away from the gap the transmission coefficient oscillates with incidence energy which is analogous to that of a conventional semiconductor.The conductance under zero temperature has a gap.The properties of electron transmission may be useful for developing graphene-based nano-electronics.     

Ferromagnetic-insulators-modulated transport properties on the surface of a topological insulator

Transport properties on the surface of a topological insulator （TI） under the modulation of a two-dimensional （2D） ferromagnet/ferromagnet junction are investigated by the method of wave function matching. The single ferromagnetic barrier modulated transmission probability is expected to be a periodic function of the polarization angle and the planar rotation angle, that decreases with the strength of the magnetic proximity exchange increasing. However, the transmission probability for the double ferromagnetic insulators modulated n-n junction and n-p junction is not a periodic function of polarization angle nor planar rotation angle, owing to the combined effects of the double ferromagnetic insulators and the barrier potential. Since the energy gap between the conduction band and the valence band is narrowed and widened respectively in ranges of 0 ≤ 0 〈π/2 and r/2 〈 0 ≤ π, the transmission probability of the n-n junction first increases rapidly and then decreases slowly with the increase of the magnetic proximity exchange strength. While the transmission probability for the n-p junction demonstrates an opposite trend on the strength of the magnetic proximity exchange because the band gaps contrarily vary. The obtained results may lead to the possible realization of a magnetic/electric switch based on TIs and be useful in further understanding the surface states of TIs.     

Pure spin polarized transport based on Rashba spin orbit interaction through the Aharonov Bohm interferometer embodied four-quantum-dot ring

The spin-polarized linear conductance spectrum and current-voltage characteristics in a four-quantum-dot ring embodied into Aharonov-Bohm (AB) interferometer are investigated theoretically by considering a local Rashba spin-orbit interaction. It shows that the spin-polarized linear conductance and the corresponding spin polarization are each a function of magnetic flux phase at zero bias voltage with a period of 2π, and that Hubbard U cannot influence the electron transport properties in this case. When adjusting appropriately the structural parameter of inter-dot coupling and dot-lead coupling strength, the electronic spin polarization can reach a maximum value. Furthermore, by adjusting the bias voltages applied to the leads, the spin-up and spin-down currents move in opposite directions and pure spin current exists in the configuration space in appropriate situations. Based on the numerical results, such a model can be applied to the design of a spin filter device.     

The electron transport characters in a nanostructure with the periodic magnetic-electric barriers

This paper detailedly studies the transmission probability, the spin polarization and the conductance of the ballistic electron in a nanostructure with the periodic magnetic-electric barriers. These observable quantities are found to be strongly dependent not only on the magnetic configuration, the incident electron energy and the incident wave vector, but also on the number of the periodic magnetic-electric barriers. The transmission coefficient and the spin polarization show a periodic pattern with the increase of the separation between two adjacent magnetic fields, and the resonance splitting increases as the number of periods increases. Surprisingly, it is found that a polarization can be achieved by spin-dependent resonant tunnelling in this structure, although the average magnetic field of the structure is zero.     

Spin-polarized quantum transport through an Aharonov--Bohm quantum-dot-ring

In this paper the quantum transport through an Aharonov--Bohm (AB) quantum-dot-ring with two dot-array arms described by a single-band tight-binding Hamiltonian is investigated in the presence of additional magnetic fields applied to the dot-array arms to produce spin flip of electrons. A far richer interference pattern than that in the charge transport alone is found. Besides the usual AB oscillation the tunable spin polarization of the current by the magnetic flux is a new observation and is seen to be particularly useful in technical applications. The spectrum of transmission probability is modulated by the quantum dot numbers on the up-arc and down-arc of the ring, which, however, does not affect the period of the AB oscillation.     

Adaptive local routing strategy on a scale-free network

Due to the heterogeneity of the structure on a scale-free network, making the betweennesses of all nodes become homogeneous by reassigning the weights of nodes or edges is very difficult. In order to take advantage of the important effect of high degree nodes on the shortest path communication and preferentially deliver packets by them to increase the probability to destination, an adaptive local routing strategy on a scale-free network is proposed, in which the node adjusts the forwarding probability with the dynamical traffic load (packet queue length) and the degree distribution of neighbouring nodes. The critical queue length of a node is set to be proportional to its degree, and the node with high degree has a larger critical queue length to store and forward more packets. When the queue length of a high degree node is shorter than its critical queue length, it has a higher probability to forward packets. After higher degree nodes are saturated (whose queue lengths are longer than their critical queue lengths), more packets will be delivered by the lower degree nodes around them. The adaptive local routing strategy increases the probability of a packet finding its destination quickly, and improves the transmission capacity on the scale-free network by reducing routing hops. The simulation results show that the transmission capacity of the adaptive local routing strategy is larger than that of three previous local routing strategies.     

Electronic transport through an open elliptic cavity

This paper computes the conductance of an open ellipse cavity and discusses the effect of finite leads on conductance. The lead introduces mode coupling with bound states in the cavity which contributes to Fano resonant line shapes in conductance. By examining the resonant states in the cavity, the effects of state mixing and annular probability distribution of wave function due to the presence of leads are found. The results have been compared with the transport properties of other systems. The finite leads result in two effects, i.e. the evanescent mode contribution and additional oscillations, to the conductance.[第一段]     

Transmission of electron through an Aharonov－Bohm interferometer with a quantum dot in Coulomb blockade regime

We calculate conductance of an Aharonov－Bohm (AB) interferometer for which a single-level quantum dot in the Coulomb blockade regime is embedded in one of its arms. Using the Schr?dinger equations and taking into account the Coulomb interaction on the dot, we calculate conductance G as a function of flux φ threaded through the ring and as a function of gate voltage V applied to the dot. It is found that the AB oscillations of G(φ) depend on the particle occupation on the dot, controlled by V. If the system is closed, there is no loss of particles, G(φ) is periodic and G(φ)=G(-φ), satisfying the Onsager relation. In this case G(φ) can reach its maximum value, 2e^2/h, at the resonance. When the system is open, one has G(φ)≠G(-φ), G(φ) yields a phase shift which depends on the loss rate of electrons in this open system.     

Non-Uniformity of Ion Implantation in Direct-Current Plasma Immersion Ion Implantation

A particle-in-cell simulation is developed to study dc plasma immersion ion implantation. Particular attention is paid to the influence of the voltage applied to the target on the ion path, and the ion flux distribution on the target surface. It is found that the potential near the aperture within the plasma region is not the plasma potential, and is impacted by the voltage applied to the implanted target. A curved equipotential contour expands into the plasma region through the aperture and the extent of the expansion depends on the voltage. Ions accelerated by the electric field in the sheath form a beam shape and a flux distribution on the target surface, which are strongly dependent on the applied voltage. The results of the simulations demonstrate the formation mechanism of the grid-shadow effect, which is in agreement with the result observed experimentally.     

THz-field-induced electronic transmission step-structure for a quantum wire

We study theoretically the low-temperature electronic transport property of a straight quantum wire under the irradiation of a finite-range transversely polarized external terahertz (THz) electromagnetic (EM) field. Using the freeelectron model and the scattering matrix approach, we show an unusual behaviour of the electronic transmission of this system. A sharp step-structure appears in the electronic transmission probability as the EM field strength increases to a threshold value when a coherent EM field is applied. We demonstrate that this effect physically comes from the inelastic scattering of electrons with lateral photons through intersubband transitions.     

QUANTUM PERCOLATION AND BALLISTIC CONDUCTANCE IN A SYSTEM OF DOUBLE-COUPLED CHAINS

The quantum-mechanical calculation of electronic conductance in double-coupled chains as a function of the interchain bonding probability p is presented. The calculated results show that one still can see the basic plateaus in the ensemble-averaged conductance curves as a function of the Fermi energy for the weak disorder. In addition, dense irregularly oscillating structures are superimposed upon each plateau. The characteristics of the conductance are very sensitive to the presence of the interchain broken bonds. For the strong disorder (p≈0.5) the conductance quantization breaks down. The accuracy of the quantization conductance rapidly drops down as the value of p approaches 0.5. The ensemble-averaged value of the logarithmic conductance as a function of the sample length exhibits a linear variation, determining a localization length. Both the localization length and the root-mean- square (RMS) value of the conductance fluctuations depend on p and the Fermi energy of electrons. The variations of the localization length and RMS with p are both of an approximate parabolic function around p≈0.5. No percolation transition is found for this quasi-one-dimensional system, as expected.     

Stability of conductance oscillations in carbon atomic chains

The conductance stabilities of carbon atomic chains(CACs) with different lengths are investigated by performing theoretical calculations using the nonequilibrium Green's function method combined with density functional theory.Regular even–odd conductance oscillation is observed as a function of the wire length.This oscillation is influenced delicately by changes in the end carbon or sulfur atoms as well as variations in coupling strength between the chain and leads.The lowest unoccupied molecular orbital in odd-numbered chains is the main transmission channel,whereas the conductance remains relatively small for even-numbered chains and a significant drift in the highest occupied molecular orbital resonance toward higher energies is observed as the number of carbon atoms increases.The amplitude of the conductance oscillation is predicted to be relatively stable based on a thiol joint between the chain and leads.Results show that the current–voltage evolution of CACs can be affected by the chain length.The differential and second derivatives of the conductance are also provided.     

Localized states of flattened quantum elliptic rings and their optical properties

A flattened elliptic ring containing an electron is studied. The emphasis is placed on clarifying the effect of the flattening. The localized states are classified into four types according to their inherent nodes. When the ring becomes more flattened, the total probability of dipole absorption of each state is found to be reduced. Furthermore, each spectral line of absorption is found to shift towards red and may split into a few lines, and these lines as a whole become more diffusive.