Thermal conductivity and thermal diffusivity of samarium in the temperature range of 293–1773 K

The thermal conductivity and the thermal diffusivity coefficients of samarium have been measured by the laser flash method in the temperature interval of 293–1773 K in solid and liquid states including the regions of phase transitions. The measurement errors of the heat transfer coefficients were ±(3–6)%. The approximation equations and the tables of reference data for the temperature dependence of properties have been obtained. The obtained results have been compared with the available literature data.     

Thermal conductivity of nitrogen in the temperature range 350–2500 K

The thermal conductivity of nitrogen is determined in a conductivity column instrument in the temperature range of 338 to 2518 K with an estimated uncertainty of about ± 1·5 per cent. The experimental data points are correlated by a cubic polynomial in temperature, viz. k(T)/(mW m^-1 K^-1) = 12·18 + 0·05224(T/K) - 0·6482 × 10^-6(T/K)² - 0·2765 × 10^-9(T/K)³. These conductivity values determined from heat transfer data taken in the continuum regime are found to be in fair agreement with the values obtained from similar data referring to low pressure range.

The present results are compared with the conductivity determinations of other workers and with the predictions of various theories developed for polyatomic gases. It is pointed out that a reliable calculation of thermal conductivity over an extended temperature range is impossible at the present time due to the absence of a large variety of experimental molecular data needed for such an effort. Average values of the vibrational energy diffusion coefficient, D _vib, are computed from the present k(T) data.     

Positron mobility in polyethylene in the 60–400 K temperature range

We have determined the positron mobility (₊) in polyethylene samples (67.2% crystalline, glass transition temperatureT _g=151 K) in the 64–400 K temperature range by Doppler shift measurements. A method based on the simulataneous observation of two lines from¹³³Ba and¹³⁷Cs radioactive sources together with the positron annihilation line, was employed to measure the Doppler shift of the 511 keV line as a function of the electric field applied to the samples. With this method we were able to measure at the same time the drift velocity of positrons and theS parameter. This parameter is very important in the interpretation of the mobility trend in samples where the positron states change with temperature. The positron mobility was corrected for positronium formation. ₊ at 64 K is 31.7±0.8 cm² V^–1 s^–1 then decreases up to 123 K, increases at 148 K and decreases again up to 170 K (₊=26.9±0.8 cm² V^–s^–). This sharp change in mobility is centred around the glass transition temperature of our samples. Then the mobility remains almost constant up to 230 K. From 250 K to 377 K, ₊ increases and reaches the value of 38.4±1.0 cm² V^–1s^–1. The corrected experimental data were well fitted by a simple model taking into account scattering and a thermally activated process (hopping mechanism).     

Specific features of thermal resistance of silicon in the temperature range 105–130 K

Careful experimental investigations into the behavior of the thermal resistance of single-crystal silicon are carried out in the immediate vicinity of the temperature of an anharmonicity sign inversion (T _i =121.1 K), where phonon thermal resistance approaches zero. An anomalous positive deviation of the total thermal resistance (W) from the linear part of the temperature dependence with a maximum at 121.1 K is found in the temperature range 105–130 K. The temperature behavior of W in this range indicates that the mean free path of phonons is limited by a characteristic size of structural defects and that its temperature dependence exhibits specific features in the vicinity of T _i . It is established that the character of the temperature dependence of W above and below T _i is different. A linear functional relation between the total thermal resistance and the isobaric thermal strain is revealed at positive and negative anharmonicities of atomic vibrations.     

Heat transfer coefficients of liquid indium in the temperature range 470–1275 K

Thermal conductivity and thermal diffusivity coefficients of liquid indium have been determined in the range of temperatures from 470 to 1275 K by the laser flash method. Errors of heat transfer coefficients are ±(3.5–5) %. Approximating equations and tables of reference data have been developed for temperature dependence of properties. Measurement results have been compared with the data available in the literature. Temperature dependence of Lorentz number has been calculated up to 1000 K.     

Thermal conductivity of the single-crystal monoisotopic 29Si in the temperature range 2.4–410 K

Physics of the Solid State - The temperature dependence of the thermal conductivity κ(T) of single-crystal silicon highly enriched in 29Si (99.919%) isotope has been measured in the...     

Electrically stimulated movement of edge dislocations in silicon in the temperature range 300–450 K

The movement of edge dislocations and the related acoustic emission of Si (111) carrying a direct current of density 0.5?5×10⁵ A/m² in the [110] direction are studied in the temperature range T=300–450 K. It is shown that the basic mechanism of dislocation movement is the electric wind determining the magnitude of the effective charge (per atom of the dislocation line) Z _eff=0.06 (n-Si) and ?0.01 (p-Si). Matching theory with experimental data has made it possible to determine the main contribution of edge dislocations to the acoustic-emission response of the silicon samples under investigation. The characteristic transition frequencies of dislocations in n-and p-Si from one metastable state into another are found to be f _max=0.1–0.5 Hz. The numerical values of the diffusion coefficient for atoms in the dislocation impurity atmosphere are estimated as 3.2×10^?18 m²/s (n-Si) and 1.5×10^?18 m²/s (p-Si).     

Heat capacity of high-purity isotope-enriched germanium-76 in the temperature range of 2–15 K

The heat capacity of high-purity isotopically-enriched germanium Ge-76 has been measured in the range of 2.5–15 K. In this range, the heat capacity of Ge-76 is 6–15% higher than the heat capacity of germanium of the natural isotopic composition, which is determined by a change in the average mass.     

Inelastic deformation of C60 single crystals in the temperature range 80–300 K

The rate spectrum of small inelastic strains of the C₆₀ single crystal in the temperature range 80–300 K has been obtained with a precision laser interferometer. It is revealed that the spectrum exhibits two large peaks in the glass formation (90–100 K) and phase transition (250–260 K) ranges. A small strain acceleration is also observed at ～220 and 240 K. The first two maxima are attributed to the changes in strain resistance upon transitions, and the strain acceleration at 220 and 240 K is associated with the annealing of the defects formed upon rapid cooling of the crystal. It is demonstrated that the peak at 250–260 K broadens with an increase in the stress. The spectrum of strain rates is compared with the calorimetric curve for the same single crystal.     

Pyroelectric properties of high-resistant KTiOPO4 crystals in the temperature range 4.2–300 K

The results of measuring the pyroelectric coefficient γ _s ^σ of nominally perfect KTiOPO₄ (KTP) crystals grown from solution in a melt with a potassium to phosphorus ratio of ～2 are presented. The γ _s ^σ (T) dependence is monotonic in the range from 4.2 to 250 K. Deviations from a linear dependence are observed beginning from 250 K, which is considered to be due to interstitial-potassium transport in the KTP crystal field. The spontaneous polarization of unclamped KTP samples is estimated from the results of the measurements. In terms of the crystal-physics approach, it is shown that the main contribution to a polar state of KTP is made by the dipole moments of two nonequivalent mesoscopic tetrahedra forming two sublattices that are polarized in opposite directions and bound by Ti(1) ions.     

Specific features of the pyroelectric properties of actual RbTiOPO4 single crystals in the temperature range 4.2–300 K

The pyroelectric properties of samples cut from various growth sectors of RbTiOPO₄ single crystals grown from solution in a melt were measured in the temperature range from 4.2 to 300 K. The experimental values of the pyroelectric coefficient range from ?1.3 × 10^?5 to ?4.6 × 10^?5 C/m² K. For the samples cut from the (100) sector, pronounced anomalies were revealed at 85 and 275 K, which, in our opinion, can be due to the contribution of associates formed by the coordination tetrahedra PO₄(1) and PO₄(2) and interstitial rubidium Rb _i . At T > 280 K, superionic conductivity begins to manifest itself in all of the samples studied, which indicates the decomposition of the dipole complexes with increasing temperature. From the measured pyroelectric coefficient and birefringence along the polar direction, the spontaneous polarization of rubidium titanyl is calculated to be 0.5 C/m² at 250 K, which is comparable in magnitude to that of lithium tantalate.     

Heat capacity of Tm2Cu2O5 in the temperature range 431–1004 K

The molar heat capacity of Tm₂Cu₂O₅ has been studied using differential scanning calorimetry in the temperature range 431–1004 K. The thermodynamic functions of the solid oxide compound have been calculated from the experimental data C _p = f(T).     

Heat capacity of Tb2Cu2O5 in the temperature range 379–924 K

The heat capacity of Tb₂Cu₂O₅ in the temperature range 379–924 K has been measured using differential scanning calorimetry. It has been shown that the obtained dependence C _p = f(T) can be described by a combination of the Debye and Einstein functions.     

Evolution of the structure of Rb2ZnCl4 over the temperature range 4.2–310 K

X-ray diffraction is used to study the temperature dependence of the lattice parameters and the sequence of structural realignments in crystalline Rb₂ZnCl₄ over temperatures of 4.2–310 K. The appearance of and changes in the system of satellite reflexes indicative of structural ordering are studied. Below 74 K, on going into the monoclinic phase (space group A11a), anomalies are observed in the behavior of the lattice parameters, and superstructural reflexes develop with wave vectors q=a ^*/3+b ^*/2+c ^*/2 corresponding to an increase by a large factor in initial parameters a, b, and c of the Pnma-phase. Fiz. Tverd. Tela (St. Petersburg) 41, 1084–1090 (June 1999)     

Vacancy generation in silicon in the temperature range 100–633 K under electron irradiation

The processes of radiation defect formation in Si with 1 MeV electron irradiation in the temperature range 100–633 K have been investigated. It is established that the generation efficiency of vacancies λ_V increases with temperature, then starts to saturate at temperatures of 250 K and finally stays constant at T>300 K. It is shown that at high temperatures, the λ_V dependence can be caused by the additional scattering of “hot” interstitial atoms on acoustical and optical phonons, the numbers of which increase with the temperature. An explanation, based on the creation of quasi-molecule of “hot” interstitial and lattice atoms, is proposed.     

Influence of shallow traps on holographic recording in Bi12SiO20 in the temperature range 200–350 K

The photoconductivity response time in Bi₁₂SiO₂₀ grows 3 orders of magnitude when the temperature changes from 350 to 200 K. We attribute this to the influence of shallow traps with activation energy 0.4 eV. For low temperatures, the time of holographic grating formation is determined by the time of shallow-level filling. Received: 29 October 1998 / Revised version: 18 December 1998 / Published online: 12 April 1999     

Nonlinear properties of multiphase high-temperature superconductors of the Bi–Sr–Ca–Cu–O system in the temperature range of the superconducting transition

The nonlinear characteristics of high-temperature superconductors of the Bi–Sr–Ca–Cu–O system have been experimentally investigated in the temperature range of the superconducting transition under the influence of a harmonic alternating magnetic field. The effect of the generation of odd harmonics in the signal of response to a harmonic alternating magnetic field for multiphase high-temperature superconductors containing regions with different values of the critical temperature in their bulk has been observed for the first time. The mechanism of harmonic generation in a superconductor in the resistive state, which is associated with the switch effect, i.e., with the redistribution of eddy current density between the local regions of the superconductor, has been considered.     

On the mechanical behaviours of a craze in particulate–polymer composites

In polymeric composites, well-defined inclusions are incorporated into the polymer matrix to alleviate the brittleness of polymers. When a craze is initiated in such a composite, the interaction between the craze and the surrounding inclusions will greatly affect the composite’s mechanical behaviours and toughness. To the best knowledge of the authors, only little research work has been found so far on the interaction between a craze and the near-by inclusions in particulate–polymer composites. In the current study, the first time, the influences of the surrounding inclusions on the craze are investigated in particulate–polymer composites. The three-phase model is adopted to study the fracture behaviours of the craze affected by multiple inclusions. An iterative procedure is proposed to solve the stress intensity factors. Parametric studies are performed to investigate the influences of the reinforcing particle volume fraction and the shear modulus ratio on fracture behaviours of particulate–polymer composites.     

Stress characteristics of creep of alpha-Zr in the temperature interval 300–900 K

The stress experiments of alpha-Zr were performed within the temperature interval 300 to 900 K using the incremental loading method. The temperature interval may be divided into three regions — the low temperature region (300–475 K), the transient region (475–775 K) and the high temperature region (above 775 K). The transient region was characterized by the maximum of the strain-rate sensitivity parameterm and also the creep deformation was — to a certain degree — affected by the athermal mechanism.The authors would like to thank Professor J.adek, DrSc, for many valuable discussions, unfailing support and continual encouragement.     

Thermal conductivity of single-crystal ZrO2-Y2O3 solid solutions in the temperature range 50–300 K

The thermal conductivity of ZrO_2−x Y₂O₃ single crystals (x = 0.5, 1.5, 2.0, 2.5, 3.0, 8.0 mol %) has been studied experimentally in the temperature range 50–300 K. The influence of high-temperature annealings on the thermal conductivity has been analyzed.