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1.
One-dimensional coordination polymers (1D-CPs) tend either to dissociate into constitutive ligands and metals readily in solution, or to aggregate randomly and amorphously, which prevents them from widespread application. In the present research, 1D-CPs comprising bridging dipyrrin ligands and divalent metal ions (Zn2+, Ni2+, and Cu2+) are synthesized. A liquid/liquid interfacial reaction gives rise to single crystals suitable for X-ray diffraction analysis: A dichloromethane solution of the ligand is layered with aqueous metal(ii) acetate, such that the coordination reaction proceeds at the liquid/liquid interface. Isolated single fibers of the zinc coordination polymer may be exfoliated from the single crystal or bulk solid upon ultrasonication. Atomic force microscopy (AFM) detects the isolated fibers with lengths of more than several μm. The exfoliated 1D-CP wires feature good processability, realizing a conjugate with single-wall carbon nanotubes (SWCNTs), and a thin film on a transparent SnO2 electrode. The processed materials show electric conversion ability: For example, the modified SnO2 electrode serves as a photoanode for a photoelectric conversion system. The designability and tunability of the present 1D-CPs is demonstrated by a ligand modification, affording a luminescent property and an extension of the photoelectric conversion response to longer wavelengths.  相似文献   

2.
An investigation of steady state and transient photoconductivity in films of poly-(N-vinylcarbazole) equipped with SnO2 and metal electrodes is described. The studies have shown that photoinduced charge transfer, leading to hole injection into the polymer film, takes place with photons of energy greater than 1.8–1.9 eV. Dark conductivity studies on samples equipped with grounded guard rings have shown that carriers originating in the bulk of the polymer film dominate the dark current when the metal electrode is at negative bias. Thermionic hole emission from the SnO2 electrode is not observed.  相似文献   

3.
Transparent SnO2, nanocomposite ZrO2–SnO2 and ZrO2 thin films were prepared by sol–gel dip-coating technique. X-ray diffraction (XRD) spectra showed a mixture of three phases: tetragonal ZrO2 and SnO2 and orthorhombic ZrSnO4. X-ray photoelectron spectroscopy (XPS) gave Zr 3d, Sn 3d and O 1s spectra of the nanocomposite ZrO2–SnO2 thin film which revealed the presence of oxygen vacancies in the nanocomposite ZrO2–SnO2 thin film. Scanning electron microscopy (SEM) observations showed that microstructure of the nanocomposite ZrO2–SnO2 thin film consists of uniform dispersion of isolated SnO2 particles in ZrO2 matrix. The band gap for the ZrO2 was estimated to be 5.51 eV and that for the nanocomposite ZrO2–SnO2 film was 4.9 eV. These films demonstrated the tailoring of band gap values which can be directly employed in tuning the band gap by simply changing the relative concentration of zirconium and tin elements. Photoluminescence (PL) spectra revealed an intense emission peak at 424 nm in the nanocomposite ZrO2–SnO2 film which indicate the presence of oxygen vacancies in ZrSnO4.  相似文献   

4.
In the present work, studies have been made to analyze the sensitivity, response, recovery time and sensing mechanism of Pd-doped thick film SnO2 sensor for detection of LPG. To achieve this, thick film Pd-doped (0.25 and 1% by weight in available Indium doped SnO2 thick film paste supplied by ESL, USA) along with an undoped (Indium doped) SnO2 sensors were fabricated on a 1″ × 1″ alumina substrate. It consists of a gas sensitive layer (doped SnO2), a pair of electrodes underneath the gas sensing layer serving as a contact pad for sensor. Also, a heater element on the backside of the substrate was printed for generating appropriate operating temperature at the substrate necessary for acquiring gas sensing properties. The sensor doped with 1% palladium showed the maximum sensitivity of 72% at 350 °C for 0.5% concentration of LPG. Possible detailed sensing mechanism of Pd-doped SnO2 sensor for LPG detection has been proposed.  相似文献   

5.
The photophysical processes for three nanosized photocatalytic oxides, titanium dioxide (TiO2) thin film, tin dioxide (SnO2) thin film, and layered TiO2/SnO2 thin film, have been examined in planar solid-state devices. It is found that, for SnO2 thin film, the dissociation of the photogenerated excitons can take place both on the film surface and inside the film, while for TiO2 thin film, almost all excitons dissociate on the film surface. Such a difference is proposed to account for the higher photocatalytic activity of TiO2 over SnO2, since it is experimentally shown that the excitons dissociate in SnO2 thin film as efficiently as they do in TiO2 thin film. For layered TiO2/SnO2 thin film, when it is illuminated by a beam of UV light, it is suggested that there exists a local electrostatic field at the SnO2 side of the interface, mainly formed by those holes efficiently photogenerated and then localized in SnO2 thin film. The photo-induced local electrostatic field is believed to facilitate hole–electron separation on TiO2 thin film and therefore increase the photocatalytic activity of the layered thin film over single TiO2 thin film.  相似文献   

6.
Thin MoO2 films were electrodeposited on a selenium pre-deposited SnO2|glass plate. The photoelectrochemical properties of MoO2 films were investigated in 0.1 M Na2SO4 solution by the ultraviolet–visible spectrophotometry, linear sweep voltammetry, and altering current impedance measurement techniques. It was found that under illumination with the incident light of λ?=?366 nm, the photo response of the MoO2|SnO2|glass electrode resulted from the MoO2 layer, while the SnO2 layer served as a sink for photogenerated charge carriers. The MoO2 film exhibited n-type conductivity. A schematic band structure diagram of MoO2 in 0.1 M Na2SO4 solution was constructed. The flat band potential (E fb), the donor concentration (N D), the photogeneration current efficiency depended on MoO2 film thickness. The [Fe(CN)6]4?/3? redox PEC cell with MoO2|SnO2|glass plate as a photoanode was constructed. Power output characteristics such as the open circuit voltage (V OC), short circuit current (I SC), the fill factor (FF), and the light-to-electrical conversion efficiency (η) were determined. The maximum light-to-electrical conversion efficiency exhibited by the PEC cell was 0.94 %.  相似文献   

7.
A novel ambient hydrolysis deposition (AHD) methodology that employs sequential water adsorption followed by a hydrolysis reaction to infiltrate SnO2 nanoparticles into the nanopores of mesoporous carbon in a conformal and controllable manner is introduced. The empty space in the SnO2/C composites can be adjusted by varying the number of AHD cycles. An SnO2/C composite with an intermediate SnO2 loading exhibited an initial specific delithiation capacity of 1054 mAh g?1 as an anode for Li‐ion batteries. The capacity contribution from SnO2 in the composite electrode approaches the theoretical capacity of SnO2 (1494 mAh g?1) if both Sn alloying and SnO2 conversion reactions are considered to be reversible. The composite shows a specific capacity of 573 mAh g?1 after 300 cycles, that is, one of the most stable cycling performances for SnO2/mesoporous carbon composites. The results demonstrated the importance of well‐tuned empty space in nanostructured composites to accommodate expansion of the electrode active mass during alloying/dealloying and conversion reactions.  相似文献   

8.
A B2O3-doped SnO2 thin film was prepared by a novel experimental procedure combining the electrodeposition and the hydrothermal treatment, and its structure and electrochemical properties were investigated by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) analysis, energy dispersive X-ray (EDX) spectroscopy and galvanostatic charge–discharge tests. It was found that the as-prepared modified SnO2 film shows a porous network structure with large specific surface area and high crystallinity. The results of electrochemical tests showed that the modified SnO2 electrode presents the largest reversible capacity of 676 mAh g?1 at the fourth cycle, close to the theoretical capacity of SnO2 (790 mAh g?1); and it still delivers a reversible Li storage capacity of 524 mAh g?1 after 50 cycles. The reasons that the modified SnO2 film electrode shows excellent electrochemical properties were also discussed.  相似文献   

9.
It has been shown that thin insulating film at the interface transparent conductive oxide/organic electroluminescent film could improve the performance of organic electroluminescent diodes (OLED). Such insulating film can be inorganic or organic. Poly-(tetrabromo-p-phenylenediselenide) (PBrPDSe) has been proved to be an efficient insulating film in OLED. The properties of these evaporated PBrPDSe thin films have been systematically studied by IR absorption, X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, electron spin resonance and optical transmission measurements. It is shown that, when the deposition temperature is kept below the decomposition temperature of the polymer, tetrabromo-p-phenylenediselenide molecule is preserved during the deposition process. However the polymer, which is insoluble in powder form, becomes soluble after deposition. It can be concluded that films are mainly composed of oligomers of tetrabromo-p-phenylenediselenide.The electrical properties of SnO2/PBrPDSe/Al thin films structures have been studied. The current-voltage characteristics exhibit a rectifying behaviour with a forward direction corresponding to a positive bias of the transparent conductive oxide film, the SnO2.  相似文献   

10.
Poly(p-phenylene sulfide) films coated on conducting SnO2 and Pt surfaces were found to attain p-type semiconducting properties on electrochemical cycling. Upon illumination of these films with visible light (λ < 500 nm) a photoelectrochemical effect was observed. The performance of a photoelectrochemical cell employing this polymer film coated electrode is discussed.  相似文献   

11.
SnO2 nanocrystalline material was prepared with a sol-gel process and thin films of the nanocrystalline SnO2 were coated on the surface of bent optical fiber cores for gas sensing. The UV/vis absorption spectrometry of the porous SnO2 coating on the surface of the bent optical fiber core exposed to reducing gases was investigated with a fiber optical spectrometric method. The SnO2 film causes optical absorption signal in UV region with peak absorption wavelength at around 320 nm when contacting H2-N2 samples at high temperatures. This SnO2 thin film does not respond to other reducing gases, such as CO, CH4 and other hydrocarbons, at high temperatures within the tested temperature range from 300 °C to 800 °C. The response of the sensing probe is fast (within seconds). Replenishing of the oxygen in tin oxide was demonstrated by switching the gas flow from H2-N2 mixture to pure nitrogen and compressed air. It takes about 20 min for the absorption signal to decrease to the baseline after the gas sample was switched to pure nitrogen, while the absorption signal decreased quickly (in 5 min) to the baseline after switching to compressed air. The adhesion of tin oxide thin films is found to be improved by pre-coating a thin layer of silica gel on the optical fiber. Adhesion increases due to increase interaction of optical fiber surface and the coated silica gel and tin oxide film. Optical absorption spectra of SnO2 coating doped with 5 wt% MoO3 were observed to change and red-shifted from 320 nm to 600 nm. SnO2 thin film promoted with 1 wt% Pt was found to be sensitive to CH4 containing gas.  相似文献   

12.
Zinc-modified nanocrystalline SnO2 electrodes are prepared by chemical treatment of the commercial SnO2 colloid with zinc acetate and their thickness effects on photovoltaic characteristics are investigated. Open-circuit voltage (Voc) and fill factor increase with increasing zinc concentration, while short-circuit photocurrent (Jsc) decreases. The normalized incident photon-to-current conversion efficiency (IPCE) shows that increase of zinc concentration utilizes long wavelength light. Concerning the conversion efficiency, optimal concentration within the present experiment is found to be 10 mol.% Zn2+ with respect to Sn4+. As increasing thickness of the films based on 10 mol.% zinc-modified SnO2 ranging from 0.76 to 8.12 μm, Jsc increases, reaches maximum and then decreases without change in Voc. The highest conversion efficiency of about 3.4% is achieved under 1 sun of AM 1.5 irradiation for the ∼6.3 μm-thick 10 mol.% zinc-modified SnO2 film with Jsc of 9.09 mA/cm2, Voc 600 mV and fill factor 62%.  相似文献   

13.
A new single‐source precursor, [SnCl4{OC(H)OC2H5}2], prepared by treating tin tetrachloride with ethyl formate (1:2 ratio) was developed for the deposition of tin oxide thin films on glass substrates. The compound [SnCl4{OC(H)OC2H5}2] is highly volatile and provides very high growth rates (up to 100Å s?1 at 560 °C) in an atmospheric pressure chemical vapor deposition (APCVD) reactor. More significantly, the compound does not decompose to tin oxide below 320 °C, thereby minimizing the formation of particles in the vapor above the growing tin oxide film. To prepare highly conducting fluorine doped tin oxide (SnO2:F) films 2,2,2‐trifluoroethyl trifluoroacetate was used as the source of fluoride. High quality SnO2:F films were deposited at 560 °C with a flow rate of 2 mL fluoride reagent hr?1; typical film properties are resistivity of 5.9 X 10?4 Ω cm, Hall mobility of 27.3 cm2 V?1 s?1, carrier concentration of 3.9 X 1020 cm?3 and percent transmission ranging from 86 to 88 %. The best films of SnO2:F possess transparencies as high as 90 % (750 nm), sheet resistances as low as 7 Ω sq?1 and Haacke's figure of merit as high as 29 X 10?3 (750 nm). The newly developed APCVD reactor and the chemistry were optimized with respect to structural, electrical and optical properties of the films by adjusting the substrate temperature, gas flow rates and the amount of fluoride present in the vapor stream. Growth rates with respect to deposition time, substrate temperature and flow rates of precursors were found to be similar for both undoped (SnO2) and doped (SnO2:F) samples. The SnO2:F films possess larger grains than the SnO2 which may account for the lower resistivity and the higher mobility in the SnO2:F samples.  相似文献   

14.
The matching of charge transport layer and photoactive layer is critical in solar energy conversion devices, especially for planar perovskite solar cells based on the SnO2 electron‐transfer layer (ETL) owing to its unmatched photogenerated electron and hole extraction rates. Graphdiyne (GDY) with multi‐roles has been incorporated to maximize the matching between SnO2 and perovskite regarding electron extraction rate optimization and interface engineering towards both perovskite crystallization process and subsequent photovoltaic service duration. The GDY doped SnO2 layer has fourfold improved electron mobility due to freshly formed C?O σ bond and more facilitated band alignment. The enhanced hydrophobicity inhibits heterogeneous perovskite nucleation, contributing to a high‐quality film with diminished grain boundaries and lower defect density. Also, the interfacial passivation of Pb?I anti‐site defects has been demonstrated via GDY introduction.  相似文献   

15.
Li  Chunchu  Lei  Yaping  He  Wei  Dai  Zhijun 《中国科学:化学(英文版)》2001,44(1):63-67
SnO2 doped with La, Ce, Sm, Zn, Ca, Al and Sb was prepared by sol-gel technique and characterized by TEM, BET, XPS and XAES. The effect of the dopants on the grain sizes of SnO2 was described and especially the effect of dopants on the distribution of the electronic state density (DESD) of Sn4d orbital was studied deeply by using X-ray-induced Auger electron spectroscopy (XAES). It was observed that the dopants could influence not only the grain sizes of SnO2 but also electronic structure of SnO2, as well as the stability of the doped SnO2 samples. The experiment results indicated that the structure and stability of SnO2 film could be improved by the chemical modification of the dopants.  相似文献   

16.
SnO2 doped with La, Ce, Sm, Zn, Ca, Al and Sb was prepared by sol-gel technique and characterized by TEM, BET, XPS and XAES. The effect of the dopants on the grain sizes of SnO2 was described and especially the effect of dopants on the distribution of the electronic state density (DESD) of Sn4d orbital was studied deeply by using X-ray-induced Auger electron spectroscopy (XAES). It was observed that the dopants could influence not only the grain sizes of SnO2 but also electronic structure of SnO2, as well as the stability of the doped SnO2 samples. The experiment results indicated that the structure and stability of SnO2 film could be improved by the chemical modification of the dopants.  相似文献   

17.
Horseradish peroxidase (HRP) was immobilized into a new type of sol–gel-derived nano-sized tin oxide/gelatin composite film (SnO2 composite film) using a sol–gel film/enzyme/sol–gel film “sandwich” configuration. Direct electrochemistry and electrocatalysis of HRP incorporated into the composite films were investigated. HRP/SnO2 composite film exhibited a pair of stable and quasi-reversible cyclic voltammetric peaks for the HRP Fe(III)/HRP Fe(II) redox couple with a formal potential of about −0.25 V (vs. SCE) in a pH 6.0 phosphate buffer solution. The electron transfer between the enzyme and the underlying electrode was greatly enhanced in the microenvironment with nano-SnO2 particles and nanoporous structures. Morphologies and microstructures of the composite films and HRP/composite films were characterized with TEM, AFM. Electrochemical impedance spectroscopy (EIS) was also used to feature the HRP incorporated into composite films. FTIR and UV–Vis spectroscopy demonstrated that HRP in the composite film could retain its native secondary structure. With the advantages of organic–inorganic hybrid materials, the HRP/SnO2 composite film modified electrode displayed good stability and electrocatalytic activity to the reduction of H2O2, The apparent Michaelis-Menten constant was estimated to be 0.345 mM, indicating a high affinity of HRP entrapped into the composite film toward H2O2.  相似文献   

18.
Sr-doped SnO2 thick film gas sensors were prepared for domestic liquefied petroleum gas (LPG) determination down to several ppm levels using the screen-printing technique. Characterization of Sr-doped SnO2 thick film was investigated by XRD, XPS and DTA-TGA analyses. The sensitivity, selectivity, sintering temperature, and static and dynamic measurement were investigated. The results showed that the Sr-doped SnO2 thick film sensor is suitable for several ppm levels LPG determination because of the high sensitivity (S = 12.7 to 10 ppm LPG). The dynamic measurements showed that the sensor exhibited high sensitivity and selectivity to domestic LPG at 210–300 °C.  相似文献   

19.
Aldol condensation of acetone was studied over solid base CaO—SnO2 catalyst in the 300—450 °C temperature range and at 15—75 atm pressure in a fixed-bed reactor. The main products are mesityl oxide and isophorone. The high stability of CaO—SnO2 catalyst performance was observed at pressure of 75 atm giving the acetone conversion of 36—41%. Increase in the temperature and pressure led to a simultaneous raise in acetone conversion. The maximum conversion of 41% was achieved at 400 °C, 75 atm and a flow rate of acetone of 8.1 g h–1 (g catalyst)–1.  相似文献   

20.
PbS electrode with high catalytic activity to Sn 2? reduction certificated by the measurements of electrochemical impedance spectroscopy and cyclic voltammetry was prepared by a simple method. The high catalytic activity makes it be a low-cost alternative counter electrode to platinum (Pt) to be used in quantum dots-sensitized solar cells (QDSSCs) based on polysulfide electrolyte. The photovoltaic performance enhancement of the quantum dots (QDs)-sensitized semiconductor thin films due to the PbS counter electrode was evaluated by fabricating QDSSCs based on CdSe QDs-sensitized ZnO (SnO2) thin film. CdSe QDs-sensitized ZnO thin film has the lower internal total series resistance and electron transmission time, the higher electron lifetime and electron collection efficiency than the CdSe QDs-sensitized SnO2 thin film. Replacing the Pt counter electrode with the PbS counter electrode leads to more improvement on the short circuit photocurrent density for QDSSC based on the ZnO thin film than the SnO2 thin film. Therefore, the process to limit the photovoltaic performance of CdSe QDs-sensitized solar cell and the possible way to improve the photovoltaic performance were analyzed.  相似文献   

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