In vivo evaluation of antithrombogenicity and surface analysis of ion-implanted silicone rubber

The chemical and physical structure of ion-implanted silicone rubbers has been studied in order to analyze their blood compatibility such as reduction of platelet accumulation owing to ion implantation. H⁺₂, He⁺, C⁺, O⁺, O⁺₂, N⁺, N⁺₂, Ne⁺, Na⁺, Ar⁺, K⁺, and Kr⁺ ion implantations were performed at an energy of 150 keV with fluences between 1 × 10¹⁷ and 3 × 10¹⁷ ions/cm² at room temperature. Results of FT-IR-ATR showed that ion implantation broke the original chemical bond to form new radicals such as OH, >C = O, SiH, and CH₂. The formation of these radicals depended on the ion species employed: >C = O formation by O⁺ or O⁺₂ implantation and formation of amines by N⁺ or N⁺₂ implantation. The results of Raman spectroscopy showed that ion implantation always produced a peak at near 1500 cm⁻¹, although the intensity of this peak was dependent on the ion species. The light ions like H⁺₂ and He⁺ were more effective than heavy ions in producing this peak, and O⁺₂ implantation was the most effective on producing amorphous carbon. These results indicated that >C = O and amorphous carbon, generated by O⁺₂ implantation, may improve the antithrombogenicity. The antithrombogenicity was tested by the superior vena cava (SVC) indwelling method for two days in rats with in-111-tropolone-platelets, and by the inferior vena cava (IVC) indwelling method for periods of 1–4 weeks in dogs. Results of the SVC indwelling method showed that platelet accumulation on H⁺₂ and O⁺₂ implanted specimens decreased. In particular 1 × 10¹⁷ O⁺₂/cm² implantation caused both accumulation onto specimens and the SVC to decrease. Macroscopic views of the ion-implanted IVC specimens in dogs revealed little thrombus formation. It is concluded that ion implantation into silicone rod is a useful technique to improve its antithrombogenicity.     

Focused ion beam implantation of Ga in Si and Ge: fluence‐dependent retention and surface morphology

Focused ion beam implantation of 30‐keV Ga⁺ ions in single‐crystalline Si and Ge was investigated by SIMS, using Cs⁺ primary ions for sputtering. Nine different implantation fluences ranging from 1 × 10¹³ to 1 × 10¹⁷ Ga⁺‐ions/cm² were used, with implanted areas of 40 × 40 µm². The Ga concentration distributions of these implants were determined by SIMS depth profiling. Such 30‐keV Ga implantations were also simulated by a dynamic Monte‐Carlo code that takes into account the gradual change of the near‐surface composition due to the Ga incorporation. In both approaches, an essentially linear increase of the Ga peak concentrations with fluence is found up to ～1 × 10¹⁶cm^?2; for higher fluences, the Ga content approaches a saturation level which is reached at about (1–2) × 10¹⁷cm^?2. The measured and simulated peak concentrations of the Ga distributions are in good agreement. The most probable ranges obtained from the experiments correspond closely with the respective values from the simulations. The surface morphology caused by Ga⁺ implantation was investigated by atomic force microscopy (AFM). The AFM data indicate that for low fluences (<3 × 10¹⁵cm^?2) the surface within the implanted areas is growing outward (i.e. is swelling). For increasingly higher fluences, sputter‐induced erosion of the surface becomes dominant and distinct craters are formed for fluences above ～1 × 10¹⁶cm^?2. At the boundary of the implanted region a wall‐like structure is found to form upon Ga implantation; its height is growing with increasing fluence, reaching a value of ～15 nm at 1 × 10¹⁷ Ga⁺‐ions/cm². Copyright © 2008 John Wiley & Sons, Ltd.     

Medium energy ion irradiation of Ge surface – search for a better understanding of the surface nano‐patterning

We report the morphological changes on Ge surfaces upon 50 keV Ar⁺ and 100 keV Kr⁺ beam irradiation at 60° angle of incidence. The Ge surfaces having three different amorphous–crystalline (a/c) interfaces achieved by the pre‐irradiation of 50 keV Ar⁺ beam at 0°, 30° and 60° with a constant fluence of 5 × 10¹⁶ ions/cm² were further processed by the same beam at higher fluences viz. 3 × 10¹⁷, 5 × 10¹⁷, 7 × 10¹⁷ and 9 × 10¹⁷ ions/cm² to understand the mechanism of nano‐scale surface patterning. The Kr⁺ beam irradiation was carried out only on three fresh Ge surfaces with ion fluences of 3 × 10¹⁷, 5 × 10¹⁷ and 9 × 10¹⁷ ions/cm² to compare the influence of projectile mass on surface patterning. Irrespective of the depth of a/c interface, the nanoscale surface patterning was completely missing on Ge surface with Ar⁺ beam irradiation. However, the surface patterning was evidenced upon Kr⁺ beam irradiation with similar ion fluences. The wavelength and the amplitude of the ripples were found to increase with increasing ion fluence. In the paper, the mass redistribution at a/c interface, the incompressible solid flow through amorphous layer, the angular distribution of sputtering/backscattering yields and the generation of non‐uniform stress across the amorphous layer are discussed, particularly in analogy with low energy experiments, to get better understanding of the mechanism of nanoscale surface patterning by the ion beams. Copyright © 2016 John Wiley & Sons, Ltd.     

Control of endothelial cell adhesion to polymer surface by ion implantation

The bio‐compatibility of ion implanted polymers has been studied by means of in vitro attachment measurements of bovine aorta endothelial cells. The specimens used were polystyrene (PS), polyethylene (PE), polypropylene (PP) and expanded polytetrafluoroethylene (ePTFE). He⁺ and Ne⁺ ion implantation were performed at an energy of 150 keV with fluences between 1 × 10 ¹³ to 1 × 10 ¹⁷ ions/cm ² at room temperature. Wettability was estimated by means of a sessile drop method. The chemical and physical structures of ion implanted polymers were investigated by contact angle measurements, atomic force microscopy and X‐ray photoelectron spectroscopic analysis in relation to cell attachment behavior. The strength of cell attachment on ion implanted specimens at static and under flow conditions was also measured. Ion implanted PP and ePTFE were found to exhibit remarkably higher adhesion and spreading of endothelial cells than non‐implanted specimens. In contrast to these findings, ion implanted PS and PE only demonstrated a little improvement of cell adhesion in this assay. Copyright © 2001 John Wiley & Sons, Ltd.     

Conductive and optical properties of PPV modified by N+ ion implantation

In this article, a soluble poly[2‐methoxy‐5‐(3′‐methyl)butoxy]‐p‐phenylene vinylene (MMB‐PPV) was synthesized by dehydrochlorination reaction and the MMB‐PPV film was implanted by nitrogen ions (N⁺) with the ion dose and energy in the range of 3.8 × 10¹⁵ to 9.6 × 10¹⁶ ions/cm² and 15–35 keV, respectively. The surface conductivity, optical absorption, optical band gap (E_g) of modified MMB‐PPV film were studied, and the third‐order nonlinear optical susceptibility (χ⁽³⁾) as well as its environmental stability of modified MMB‐PPV film were also measured by degenerate four‐wave mixing system. The results showed that the surface conductivity of MMB‐PPV film was up to 3.2 × 10^?2 S when ion implantation was performed with the energy of 35 keV at an ion dose of 9.6 × 10¹⁶ ions/cm², which was seven order of magnitude higher than that of the pristine film. UV‐Vis absorption spectra demonstrated that the optical absorption of MMB‐PPV film was enhanced gradually in the visible region followed by a red shift of optical absorption threshold and the E_g value was reduced from 2.12 eV to 1.59 eV with the increase of ion dose and energy. The maximum χ⁽³⁾ value of 2.45 × 10^?8 esu for modified MMB‐PPV film was obtained with the ion energy of 20 keV at an ion dose of 3.8 × 10¹⁶ ions/cm², which was almost 33 times larger than that for pristine film. In comparison to the reduction of 17% in the χ⁽³⁾ value of pristine MMB‐PPV film, the maximum χ⁽³⁾ value of 2.45 × 10^?8 esu for modified MMB‐PPV film decreased by over 5.3% when they had been exposed under the same ambient conditions for 90 days. © 2010 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 48: 2072–2077, 2010     

Ion induced controlled modifications in structural and optical properties of indium oxide thin films – studies with 25‐keV Co− and N+ beam implantations

Two sets of indium oxide thin films (~150 nm) grown on quartz substrates using thermal evaporation technique were processed separately with 25‐keV Co^? and N⁺ ions with several fluences ranging from 1.0 × 10¹⁵ to 1.0 × 10¹⁶ ions/cm². The pristine and the ion implanted films were characterized by Rutherford backscattering spectroscopy (RBS), X‐ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV–Vis spectrometry. The RBS spectra reveal signature of only cobalt and nitrogen in accordance to their fluences confirming absence of any contamination arising due to ion implantation. An increase in the average crystallite size (from 13.7 to 15.3 nm) of Co^? ions implanted films was confirmed by XRD. On the other hand, the films implanted with N⁺ ions showed a decrease in the average crystallite size from 20.1 to 13.7 nm. The XRD results were further verified by SEM micrographs. As seen in AFM images, the RMS surface roughness of the samples processed by both ion beams was found to decrease a bit (29.4 to 22.2 nm in Co^? implanted samples and 24.2 to 23.3 nm in N⁺ implanted samples) with increasing fluence. The Tauc's plot deduced from UV–visible spectroscopy showed that the band gap decreases from 3.54 to 3.27 eV in Co^? implanted films and increases from 3.38 to 3.58 eV for films implanted with N⁺ ions. The experimental results suggest that the modifications in structural and optical properties of indium oxide films can be controlled by optimizing the implantation conditions. Copyright © 2017 John Wiley & Sons, Ltd.     

Study of thermal recrystallisation in Si implanted by 0.4-MeV heavy ions

A Si crystal layer on SiO₂/Si was implanted using 0.4-MeV Kr⁺, Ag⁺, and Au⁺ at ion fluences of 0.5 × 10¹⁵ to 5.0 × 10¹⁵ cm⁻². Subsequent annealing was performed at temperatures of 450° and 800° for 1 hour. The structural modification in a Si crystal influences ion beam channelling phenomena; therefore, implanted and annealed samples were investigated by Rutherford backscattering spectrometry under channelling (RBS-C) conditions using an incident beam of 2-MeV He⁺ from a 3-MV Tandetron in random or in aligned directions. The depth profiles of the implanted atoms and the dislocated Si atom depth profiles in the Si layer were extracted directly from the RBS measurement. The damage accumulation and changes in the crystallographic structure before and after annealing were studied by X-ray diffraction (XRD) analysis. Lattice parameters in modified silicon layers determined by XRD were discussed in connection to RBS-C findings showing the crystalline structure modification depending on ion implantation and annealing parameters.     

飞秒强激光场下亚硝酰氯分子的电离和解离

Ionization and dissociation of nitrosyl chloride ClNO were studied using femtosecond laser mass spectra tech-nique.Strong fragmental ions NO~ and Cl~ were observed with the laser intensity varied from 3.2×10~(14) to 2.5×10~(15) W/cm~2.These fragmental ions were attributed to the direct dissociation of the parent ions.Electronic structurecalculations were also carried out with Hartree-Fock,density functional and correlated levels of theory to under-stand the possible fragmentation pathways.The very low N-Cl bond energy in the parent ion of nitrosyl chloride isa clear reason for the absence of ClNO~ and ClN~ ion peaks from the femtosecond laser mass spectrum.     

Sputtering of bismuth thin films under MeV Cu heavy ion irradiation: Experimental data and inelastic thermal spike model interpretation.

The sputtering of bismuth (Bi/Si) thin films deposited onto silicon substrates and irradiated by swift Cu^q+ heavy ions (q = +4 to +7) was investigated by varying both the ion energy over the 10 to 26‐MeV range and the ion fluence ϕ from 5.1 × 10¹³ cm⁻² to 3.4 × 10¹⁵ cm⁻². The sputtering yields were determined experimentally via the Rutherford backscattering spectrometry technique using a 2‐MeV He⁺ ion beam. The measured sputtering yields versus Cu⁷⁺ ion fluence for a fixed incident energy of 26 MeV exhibit a significant depression at very low ϕ‐values flowed by a steady‐state regime above ~1.6 × 10¹⁴ cm⁻², similarly to those previously pointed out for Bi thin films irradiated by MeV heavy ions. By fixing the incident ion fluence to a mean value of ~2.6 × 10¹⁵ cm⁻² in the upper part of the yield saturation regime, the measured sputtering yield data versus ion energy were found to increase with increasing the electronic stopping power in the Bi target material. Their comparison to theoretical predicted models is discussed. A good agreement is observed between the measured sputtering yields and the predicted ones when considering the contribution of 2 competitive processes of nuclear and electronic energy losses via, respectively, the SRIM simulation code and the inelastic thermal spike model using refined parameters of the ion slowing down with reduced thermophysical proprieties of the Bi thin films.     

Ion‐beam‐induced morphology on the surface of thin polymer films at low current density and high ion fluence

The effect of Xe⁺ bombardment on the surface morphology of four different polymers, polystyrene (PS), poly(phenylene oxide), polyisobutylene, and polydimethylsiloxane, was investigated in ion energy and fluence ranges of interest for secondary ion mass spectrometry depth‐profiling analysis. Atomic force microscopy (AFM) was applied to analyze the surface topography of pristine and irradiated polymers. AFM analyses of nonirradiated polymer films showed a feature‐free surface with different smoothness. We studied the influence of different Xe⁺ beam parameters, including the incidence angle, ion energy (660–4000 eV), current density (0.5 × 10² to 8.7 × 10² nA/cm²), and ion fluence (4 × 10¹⁴ to 2 × 10¹⁷ ion/cm²). Xe⁺ bombardment of PS with 3–4 keV at a high current density did not induce any change in the surface morphology. Similarly, for ion irradiation with lower energy, no surface morphology change was found with a current density higher than 2.6 × 10² nA/cm² and an ion fluence up to 4 × 10¹⁶ ion/cm². However, Xe⁺ irradiation with a lower current density and a higher ion fluence led to topography development for all of the polymers. The roughness of the polymer surface increased, and well‐defined patterns appeared. The surface roughness increased with ion irradiation fluence and with the decrease of the current density. A pattern orientation along the beam direction was visible for inclined incidence between 15° and 45° with respect to the surface normal. Orientation was not seen at normal incidence. The surface topography development could be explained on the basis of the balance between surface damage and sputtering induced by the primary ion beam and redeposition–adsorption from the gas phase. Time‐of‐flight secondary ion mass spectrometry analyses of irradiated PS showed strong surface modifications of the molecular structure and the presence of new material. © 2000 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 39: 314–325, 2001     

Effect of N5+ ion implantation on optical and gas sensing properties of WO3 films

In this paper we report the optical and gas sensing behaviours of tungsten oxide (WO₃) films, implanted with 45‐keV N^{5 +} ions of different fluences in the range 1 × 10¹⁵ to 1 × 10¹⁷ cm^–2. The film with fluence 1 × 10¹⁵ cm^–2 shows the most intense PL spectrum with two prominent peaks near UV and blue regions. The morphological changes because of ion implantation are also investigated by atomic force microscopy. Because of implantation the gas sensitivity of the film, in exposure of methane, is found to increase with reasonably fast response and recovery times. With the increase of the concentration of methane, the sensors show better result. Present work also includes the effect of N^{5 +} ion implantation on the structural property of WO₃ films. Copyright © 2015 John Wiley & Sons, Ltd.     

Luminescence properties of Cu‐ion‐implanted and annealed ZnO thin films deposited by chemical vapor deposition and pulsed laser deposition

Ion implantation techniques were used to study the effect of an MgO additive on the luminescence properties induced by Cu in ZnO thin films. Cu ions (accelerating voltage of 75 keV, dose of 4.5 × 10¹⁴ ions/cm²) were implanted at room temperature in nondoped and Mg‐doped ZnO thin films. After annealing, emissions in the visible region originating from Cu phosphor were observed at 510 nm in CVD‐ZnO and at 450 nm in Mg‐doped ZnO (MZO) thin films. The Cu depth profile shows distortion in the low‐concentration region of CVD‐ZnO. After the annealing, the Cu implant was homogenized in thin films, and then the Cu concentration was determined to be 1.5 × 10¹⁹ ions/cm³ in CVD‐ZnO and 5.6 × 10¹⁸ ions/cm³ in MZO thin films. Copyright © 2005 John Wiley & Sons, Ltd.     

Effects of Ion Beams Pretreatment on Damage of UV-B Radiation on Seedlings of Winter Wheat (Triticum aestivum L.)

The seeds of winter wheat were pretreated with three different doses of low-energy N⁺ beams, and its seedlings were subjected to UV-B irradiation (10.08?kJ?m^?2?day^?1) at three-leaves stage. The growth characteristic of seeds, the oxidative damage to membrane system induced by UV-B radiation, and the alleviating effects of N⁺ beams pretreatment to radiation damage were investigated. The results showed that the germination rate and seedling rate, respectively, increased 14.09?±?1.03 and 13.91?±?1.21?% compared with control (CK) at the dose of 4.0?×?10¹⁶ ions/cm². When seedlings were exposed to UV-B radiation, the pretreatment method under the dose of 4.0?×?10¹⁶ ions/cm² made the activity of peroxidase and superoxide dismutase increasing, the content of chlorophyll enhancing, but the content of malondialdehyde reducing significantly compared with that of the single UV-B radiation. Whereas, the activity of catalase irradiated by UV-B improved notably under the pretreatment dose of 8.0?×?10¹⁶ ions/cm². In addition, after being irradiated with UV-B, the content of soluble protein and glutathione whose seeds were pretreated by the dose of 6.0?×?10¹⁶ ions/cm² were higher than that of the single UV-B radiation. It was suggested that the suitable dose of low-energy ion beams pretreatment to wheat seeds could change its physiological characteristics at seedlings stage to alleviate the damage effects from UV-B radiation.     

Polystyrene Sulfonate Threaded through a Metal–Organic Framework Membrane for Fast and Selective Lithium‐Ion Separation

Extraction of lithium ions from salt‐lake brines is very important to produce lithium compounds. Herein, we report a new approach to construct polystyrene sulfonate (PSS) threaded HKUST‐1 metal–organic framework (MOF) membranes through an in situ confinement conversion process. The resulting membrane PSS@HKUST‐1‐6.7, with unique anchored three‐dimensional sulfonate networks, shows a very high Li⁺ conductivity of 5.53×10^?4 S cm^?1 at 25 °C, 1.89×10^?3 S cm^?1 at 70 °C, and Li⁺ flux of 6.75 mol m^?2 h^?1, which are five orders higher than that of the pristine HKUST‐1 membrane. Attributed to the different size sieving effects and the affinity differences of the Li⁺, Na⁺, K⁺, and Mg²⁺ ions to the sulfonate groups, the PSS@HKUST‐1‐6.7 membrane exhibits ideal selectivities of 78, 99, and 10296 for Li⁺/Na⁺, Li⁺/K⁺, Li⁺/Mg²⁺ and real binary ion selectivities of 35, 67, and 1815, respectively, the highest ever reported among ionic conductors and Li⁺ extraction membranes.     

Determination of Labetalol Hydrochloride in Drug Formulations by Spectrophotometry

A validated, selective and sensitive spectrophotometric method has been developed for the determination of labetalol hydrochloride in commercial dosage forms. The method is based on the coupling reaction of positive diazonium ion of 4‐aminobenzenesulfonic acid with phenolate ion of labetalol to form a colored azo compound which absorbs maximally at 395 nm. Under the optimized experimental conditions, the color is stable up to 2 h and Beer's law is obeyed in the concentration range of 0.8–17.6 μg mL^?1 with a linear regression equation of A = 4.84 × 10^?4 + 7.864 × 10^?2 C and coefficient of correlation, r = 0.9999. The molar absorptivity and Sandell's sensitivity are found to be 2.874 × 10⁴ L mol^?1 cm^?1 and 0.013 μg cm^?2 per 0.001‐absorbance unit, respectively. The limits of detection and quantitation of the proposed method are 0.08 and 0.23 μg mL^?1, respectively. The intra‐day and inter‐day precision variation and accuracy of the proposed method is acceptable with low values of standard analytical error. The recovery results obtained by the proposed method in drug formulations are acceptable with mean percent recovery ± RSD of 99.97 ± 0.52 ‐ 100.03 ± 0.63%. The results of the proposed method compared with those of Bilal's spectrophotometric method indicated excellent agreement with acceptable true bias of all samples within ± 2.0%.     

Novel floating‐type low‐energy ion gun for high‐resolution depth profiling in ultrahigh vacuum

A floating‐type low‐energy ion gun (FLIG) has been developed for high‐resolution depth profiling in ultrahigh vacuum (UHV). This UHV‐FLIG allows Ar⁺ ions of primary energy down to 50 eV to be provided with high current intensity. The developed UHV‐FLIG was sufficiently compact, being ～30 cm long, to be attached to a commercial surface analytical instrument. The performance of the UHV‐FLIG was measured by attaching it to a scanning Auger electron microprobe (JAMP‐10, Jeol), the base pressure of which in the analysis chamber was ～1 × 10^?7 Pa. The vacuum condition of ～5 × 10^?6 Pa was maintained during operation of the UHV‐FLIG without a differential pumping facility. Current density ranged from 41 to 138 µA cm^?2 for Ar⁺ ions of primary energy 100–500 eV at the working distance of 50 mm. This ensures a sputtering rate of ～10 nm h^?1 with 100 eV Ar⁺ ions for Si, leading to depth profiling of high resolution in practical use. Copyright © 2003 John Wiley & Sons, Ltd.     

Patterning of cells on a PVC film surface functionalized by ion irradiation

Micropatterns of cells on a poly(vinyl chloride) (PVC) film surface were created by using ion irradiation. A PVC film was irradiated with H⁺ ions through a pattern mask in order to create patterns of the hydrophilic/hydrophobic regions on the PVC surface. The effect of ion irradiation on the surface properties of the PVC film was characterized by using Fourier transform‐infrared spectroscopy (FT‐IR), water contact angle measurement, and X‐ray photoelectron spectroscopy (XPS). The results revealed that the chemical environment of the PVC film surface was effectively changed by ion irradiation due to dehydrochlorination and oxidation. The in vitro cell culture on the patterned PVC film surface showed selective adhesion and proliferation of the cells on the ion‐irradiated regions. Well‐defined 50 µm patterns of the cells were obtained on the PVC film surface irradiated to 1 × 10¹⁵ ions/cm². Copyright © 2009 John Wiley & Sons, Ltd.     

Dielectric and conductivity studies of 90 MeV O7+ ion irradiated poly(ethylene oxide)/montmorillonite based ion conductor

In the present work effect of 90 MeV O⁷⁺ ions with five different fluences on poly(ethylene oxide) (PEO)/Na⁺-montmorillonite (MMT) nanocomposites has been investigated. PEO/MMT nanocomposites were synthesized by solution intercalation technique. With the increase in irradiation fluence, gallery spacing of MMT increases in the composite and an exfoliated nanostructure is obtained at the fluence of 5?×?10¹² ions/cm² as revealed by X-ray diffraction results. Highest room temperature ionic conductivity of 4.2?×?10^?6?S?cm^?1 was found for the fluence 5?×?10¹² ions/cm², while the conductivity for unirradiated polymer electrolyte was found to be 7.5?×?10^-8?S?cm^?1. The increase in intercalation of PEO chains inside the galleries of MMT results in the increase in interaction between Na⁺ cation and oxygen heteroatom leading to the increase in ionic conductivity of the composites. Surface morphology and interactions among the various constituents in the nanocomposites at different fluence have been examined by scanning electron microscopy and Fourier transform infrared spectroscopy, respectively. The appearance of peak for each fluence in the loss tangent suggests the presence of relaxing dipoles in the polymer nanocomposite electrolyte films. With the increase in ion fluence the peak shifts towards higher frequency side, suggesting decrease in the relaxation time.     

Positron annihilation and ion beam analysis of ion-bombardment-induced hydrogen release and oxidation of ultra high molecular weight polyethylene

Ultra high molecular weight polyethylene was bombarded with He⁺ and Ar⁺ ions to fluences ranging from 10¹³ to 2×10¹⁶ ions/cm². Rutherford backscattering and nuclear reaction analysis were applied to study mechanism of oxygen uptake and hydrogen release induced by ion beam bombardment. The influence of ion bombardment on positron annihilation lifetime parameters is also discussed. Hydrogen release was observed with increasing ion dose and was correlated to the ion stopping power. An important effect observed, was the rapid oxidation of samples after exposure to air.