Angle-resolved UV photoemission from Y(0001)

We observe a number of well defined peaks in the photoemission spectra from Y(0001) over the photon energy range 25 eV<hv<60 eV. We believe that one of the features with a binding energy of 1.7 eV is due to emission from states near the upper band edge at the point and that a second nearE _F originates from a surface state. We find a large peak at a binding energy of 9.6 eV which is sensitive to the quality of the surface.     

Electronic structure of solid pyridine and pyridine adsorbed on polycrystalline silver

The electronic structure of the valence bands of polycrystalline films of pyridine (C₅H₅N), including all valence levels extending from initial energies of 4 down to 30 eV (E_VAC = 0), has been determined from photoelectron energy distribution measurements for photon energies 20eV ? hν ? 170 eV, using synchrotron radiation. The valence bands showing a one-to-one correspondence to the gas phase, a rigid relaxation shift of δe_r = 0.3 eV for the vertical binding energies, and a considerable solid state broadening (? 0.5 eV) are assigned in comparison to recent MO calculations. By tuning the photon energy and thereby achieving high surface sensitivity for hν around 45 eV, we have also studied pyridine adsorbed at 120 K (6 Langmuir) on in situ prepared polycrystalline Ag-substrates. Thus, we were able to study in detail the surface electronic structure in the range of the Ag 4d bands. Due to a strong mixing of substrate 4d and pyridine 2b₁ (π), 1a₂ (π) and 7a₁ (n) energy levels, the surface electronic structure is strongly modified in the upper part of the 4d bands, and a strong and sharp (0.4 eV FWHM) surface resonance at an energy of 3.7 e V below E^AG_F is observed, which we attribute to a 4d-7a₁ (n) bonding of the nitrogen lone-pair orbital.     

Electronic structure of Si(111) surfaces

We report on new angle-resolved photoemission studies of Si(111) 2 × 1 and 7 × 7 surfaces. The emission from the 2 × 1 surface shows much structure. For normal emission the energy positions are insensitive to the photon energy in the range 19–27 eV. The emission has been interpreted as a probe of the surface density of states, SDOS, including both surface states, resonances and bulk-like states. The SDOS was also calculated as a function of parallel momentum k_∥ for a model of the Si(111) 2 × 1 surface obtained from energy minimization considerations. We identify emission from the dangling bond band, which has a positive dispersion of 0.6 eV, and also emission from surface resonances which have some character of the compressed and stretched back bonds. There are also other predicted surface resonances that correspond to experimental peaks which have not been identified in previous work. Except for the dangling bond band, the surface resonances are limited in k_∥ space, so that it is not possible to follow these resonance bands over all angles. Maximum intensity for the normal emission from the dangling bond is obtained at 23 eV, while the emission from the lowest s-like states monotonically increases towards 30 eV photon energy. When annealing the cleaved 2 × 1 surface to the 7 × 7 reconstructed surface, the spectra broaden significantly. The intensity of the dangling bond decreases and we see a very small metallic edge.     

Valence band photoemission from in-situ grown GaAs(100)-c(4 × 4)

The electron structure of GaAs(100)-c(4 × 4) has been studied by means of angular-resolved photoelectron spectroscopy for photon energies (20–40) eV. The sample was prepared by molecular beam epitaxy in-situ at the BL41 beamline of the MAX I storage ring of the Max-lab in Lund. Photon energy variation helped in separating dispersing bulk features from nondispersing surface features in the energy distribution curves recorded at normal emission. Two sets of peaks were related to bulk transitions from the two topmost E(k _⊥) branches of the valence band of GaAs and one more set came from the surface state in the center of the 2D Brillouin zone. Good agreement was found between experimental bulk dispersion branches and theoretical calculations based on realistic final state dispersion. The surface state peak, hardly visible at 20 and 22 eV photon excitations, gets clearly enhanced at higher excitation energies. In contrast to earlier measurements of this kind, two major differences have been found: (i) clearly developed surface state peak just below the top of the v alence band, (ii) absence of a large peak in the electron energy distribution at around −6.5eV below the valence band top. Presented at the X-th Symposium on Suface Physics, Prague, Czech Republic, July 11–15, 2005.     

Resonant Raman scattering of CdCr2Se4

The scattering cross section of the Raman-active phonons at 156 cm^?1 (Eg) and 169 cm^?1 (F2g) in the ferromagnetic semiconductor CdCr₂Se₄ (T_c=130 K) has been measured as a function of incident photon energy between 1.55 and 2.81 eV, both in the ferromagnetic and paramagnetic phases. The resonance curve peaks sharply near 2 eV and shows a broadening for temperatures below the Curie point. The relative line intensities change significantly with photon energy. The results show that the concept of spin-dependent Raman scattering in the ferromagnetic spinels has to be revised in terms of exchange-splitting-induced resonant Raman scattering.     

Electronic band structure of Cu3Au: An angle-resolved photoemission study along the [111]-direction

High-resolution normal photoemission (ARPE) spectra have been recorded for Cu₃Au(111) with the use of polarized synchrotron and rare-gas resonance radiation in the photon energy range from 9 to 27 eV. It is for the first time that dispersions of the gold-like bands have been found experimentally. Using a fully relativistic layer-KKR photoemission formalism, occupied and unoccupied bands as well as one-step-model photoemission spectra have been calculated. The comparison of calculated spectra with experimental ones and the observation of direct-transition resonances upon photon energy near the Brillouin zone-center reveal a shift of the unoccupied ground-state bands by about +2.5 eV (self-energy shift). The direct-transition structures in the experimental spectra have been exploited to determine the dispersions of the occupied bands along the [111] direction (A line in k space). In order to determine the wave vector of the experimental direct transitions we used as final state that calculated unoccupied band along [111], which also exists in pure copper and gold up to about 20 eV above the Fermi energy (“unfolded” band structure), shifted by + 2.5 eV. The experimental occupied bands with Cu character are in very good agreement with theory after shifting the latter by about 0.3 eV to lower energy, whereas somewhat bigger discrepancies exist for the gold-like bands.     

Optoelectrical investigations on MOS-sandwiches at low temperatures

MOS-structures are irradiated with light of energy from 1.5 to 6 eV at different temperatures (300, 77, 12 K) while the resulting photocurrent is measured. At high photon energies (hv>4 eV) the threshold energy and the scattering mean free path for electrons at the Si — SiO₂-interface are determined. They are independent from temperature. At low photon energies (hv<3 eV) electrons are released from traps with energy levels 1.2 and 1.9 eV below the Si-conduction band. The trap concentration is 4.8 10¹³ cm^–3. The capture cross section is measured in a rather direct way. The temperature and electrical field dependence of this cross section is explained by a trapping model.     

Damping of the localized surface plasmon polariton resonance of gold nanoparticles

We report on a strong damping of the localized surface plasmon polariton resonance of gold nanoparticles. The ultra-fast dephasing time of localized surface plasmon polariton resonances in gold nanoparticles was systematically studied as a function of the particle size at a fixed photon energy of h ν=1.85 eV. Dephasing times ranging from T₂^expT_{2}^{\mathrm{exp}} = 5.5 fs to 15.0 fs were extracted and an influence of the reduced dimensions was detected. We have identified two dominant damping mechanisms: the well-known surface scattering and, for the first time, band structure changes. We have quantified the influence of these band structure changes on the optical properties by determining the essential damping parameter A to be A ^exp=0.32 nm/fs.     

UV inverse photoemission from cerium and its hydrides

Isochromate spectra of polycrystalline Ce, CeH_2.1 and CeH_2.9 were measured at a photon energy of 9.7 eV. The intensity at E_F is 4 to 5 times lower on CeH_2.1 than it is on the metal, and it vanishes on CeH_2.9. This is in accordance with XPS, UPS and conductivity data. In both hydrides broad features ( ～2 eV FWHM) appear, centered between 4 and 5 eV. From cross section arguments and from comparison with a CeRu₂ spectrum taken at the same photon energy, we conclude that we do not see any 4f contribution in our spectra. A signal at 7 eV on the CeH_2.9 spectrum is assigned to the ²Σ⁺_u shape resonance of the H₂^? ion, formed by desorbed H₂ molecules.     

The electronic structure of ordered Cu3Au(001)

The electronic structure of the (001) face of ordered Cu₃Au was studied using synchrotron radiation at BESSY, in the photon energy range 22–80 eV. The Cu 3d-derived bands in Cu₃Au look like the foldedd-bands of fcc Cu metal. Three Au 5d-derived bands were observed at 5.0, 6.1 and 7.0 eV below the Fermi level, which showed no dispersion with change in photon energy. The Cu 3d- and the Au 5d-derived bands are found to be separated in energy. We have calculated self-consistent energy bands along the (001) direction using the fully relativistic LMTO method. Comparison of these bands with those experimentally determined shows good agreement. From the calculated bands along –X the direction dependent densities of states were determined, which give a consistent account for the non-dispersive Au-bands.     

C60单晶价带色散的同步辐射光电子谱研究

测量了C₆₀单晶(111)解理面法向发射的角分辨光电子谱.利用同步辐射光源研究了对应于分子轨道HOMO及HOMO-1的能带的色散关系.实验观察到HOMO和HOMO-1能带在Γ—L方向存在明显的色散,最大色散分别为027eV和042eV.色散曲线与理论电子结构基本符合. 关键词：     

Photoemission study of oxygen chemisorption on tin

Photoemission measurements have been made at photon energies from 5–12 eV and at 21.2 eV on evaporated Sn films and the same films with varying room temperature exposure to oxygen. For hν ? 9 eV the quantum yield for Sn with exposures of as much as 4000 L oxygen (1 L = 1 Langmuir = 10^?6 Torr sec) differs only slightly from the clean metal. For hν ? 9 eV no change in yield is observed with oxygen exposure. The energy distribution of photoemitted electron (EDC's) from Sn with increasing exposure to oxygen above ? 20 L are characterized by the growth of two peaks which were not present in the EDC's for the clean metal, located 2.9 ± 0.1 eV and 4.8 ± 0.1 eV below the Fermi level. We associate this structure with the presence of SnO₂. No sharp resonance which could be associated with adsorbed oxygen was seen. Uniformly reduced emission from metallic Sn states and a Fermi level as sharp as for the clean metal is observed in the EDC's at all oxygen exposures. In addition, no change in work function with oxygen exposure was detected. The effects of oxygen saturate for exposures ? 4000 L. We suggest that under the conditions used in this experiment, the oxygen penetrates beneath the surface forming SnO₂ and leaving metallic Sn on the surface.     

Cross section and resonance effects in photoemission from Sn-doped In2O3(111)

Photoemission spectra of Sn-doped In₂O₃(111) have been measured using a range of photon energies between 40 and 1300 eV. The intensity of structure at the bottom of the valence band associated with states of mixed Sn 5s/O 2p character increases with increasing photon energy relative to that of states of more dominantly O 2p character at the top of the valence band, as expected from one electron ionisation cross sections. In addition a pronounced resonance in the intensity of a weak conduction band feature is observed around the In 4p core threshold.     

硅的间接跃迁双光子吸收系数谱

利用皮秒Nd:YAG脉冲激光器作为激发光源,测量出光子能量介于1.36 μm (0.912 eV)—1.80 μm (0.689 eV)之间的硅间接跃迁双光子吸收系数谱.尽管此波段范围内的激光光子能量小于硅间接带隙,但当激光辐照在硅基光电二极管受光面时,在二极管两电极端仍然探测到了显著的脉冲光伏信号.光伏信号峰值强度与入射光强呈二次幂函数关系,表明其是双光子吸收过程.采用pn结等效结电容充放电模型,将光伏响应信号峰值与入射光强相关联,从中提取出硅的间接跃迁双光子吸收系数,改变入射波长得到系数谱.研究表明:     

甲醇/TiO2(110)界面激发态的表征

用光电子能谱的方法研究了甲醇/TiO₂(110)界面的电子结构．在激发波长为400 nm的双光子光电子能谱(2PPE)中,探测到了一个末态能量在费米能级以上5.5 eV的共振信号．之前的研究[Chem. Sci. 1, 575 (2010)]表明,这个共振信号与甲醇在5配位的钛离子(Ti_5c)上的光催化解离相关．双光子光电子能谱同时携带初态和中间态的信息．为此设计了一个调谐激发光波长的2PPE实验以及一个单光子光电子能谱(1PPE)和2PPE对比的实验,结果一致表明这个共振信号来自于未占据的中间态,也就是激发态．能带色散关系测量表明这个激发态是局域的．时间分辨2PPE测得这个激发态的寿命是24 fs．     

锰酸钇薄膜中Mn3+离子d-d跃迁的超快光谱学研究

本文利用时间分辨光谱技术,系统研究了飞秒激光诱导YMnO₃薄膜中Mn³⁺离子3d轨道跃迁的 载流子动力学过程.当抽运光子能量为1.7 eV,对应于Mn³⁺离子的3d轨道跃迁, 抽运-探测零延迟时间处的透射率变化随着温度的降低逐渐减小. 这起源于低温下短程反铁磁有序诱导Mn³⁺离子d-d能级发生"蓝移". 载流子弛豫过程由快、慢两个过程组成,分别对应于电子-声子相互作用和自旋-声子相互作用. 实验发现,当温度低于80 K,电子-声子热化时间显著增加,表明低温下电子-声子的 耦合强度受长程反铁磁有序的影响.     

Resonant photoemission at the 3s threshold of Ni

A resonant enhancement of valence band photoemission features in Ni near the 3s threshold is presented. The emission behavior with photon energy of the Ni-3d band is characteristic of a Fano-type resonance. In addition to the main 3d-band emission and 6eV binding energy satellite, a weak satellite is observed at 7.2eV below the Fermi level with photon energies in the vicinity of the 3s threshold.     

Optoelectrical investigations on MOS-sandwiches at low temperatures

MOS-structures are irradiated with light of energy from 1.5 to 6 eV at different temperatures (300, 77, 12 K) while the resulting photocurrent is measured. At high photon energies (hv>4 eV) the threshold energy and the scattering mean free path for electrons at the Si — SiO₂-interface are determined. They are independent from temperature. At low photon energies (hv<3 ev)=" electrons=" are=" released=" from=" traps=" with=" energy=" levels=" 1.2=" and=" 1.9=" ev=" below=" the=" si-conduction=" band.=" the=" trap=" concentration=" is=" 4.8="> 10¹³ cm^–3. The capture cross section is measured in a rather direct way. The temperature and electrical field dependence of this cross section is explained by a trapping model.     

An angle-resolved photoemission study of the chemisorption of chalcogens on Cu(100): II. Cu(100) + c(2 × 2)O

Starting with the three-step direct-transition model of ARPES for bulk materials, which was examined in the preceding paper, we propose a framework for describing changes in the photoemission spectra due to chemisorption. Normal emission ARPES data for Cu(100) with a c(2 × 2)O overlayer were obtained in the photon energy range hv = 11 to 34 eV. These spectra have been compared within the proposed framework with those obtained from clean Cu(100). Changes were found in the Cu emission features which could be explained by the relaxation of momentum conservation perpendicular to the surface in the optical excitation step and by the relaxation of momentum conservation parallel to the surface in the escape step. These changes include a photon energy dependent broadening of the d-band peak and the preferential attenuation of the sharp direct-transition feature associated with the sp-band. Some evidence for a surface resonance at the top of the d-bands has been obtained. Changes in the spectrum of scattered electrons were related to modifications of evanescent final states. A 1.3 eV wide band derived from the oxygen p_x,y-orbitals was deduced from spectra obtained at normal emission and along the $\text{Γ}\text{X}$ and $\text{Γ}\text{M}$ lines of the surface Brillouin zone. On the other hand, no emission was clearly detected from the oxygen p_z-orbitals. Oxygen induced emission above the Cu d-bands was observed and attributed to antibonding states. This emission was directed towards the bulk [011] directions.     

Absolute determination of energy band dispersion in gold using photoemission from Fermi surface optical transitions

Angle-resolved photoemission using synchrotron radiation in the photon energy range 12–20 eV has been used to map the unoccupied bands of Au. By concentrating on transitions at the Fermi surface, the method overcomes the difficulties associated with the indeterminacy of k_⊥, the component of the electron wave vector perpendicular to the surface. The experimentally determined bands are found to be significantly higher in energy than the best available theoretical calculations.