Effect of carbon on the microstructural evolution of Zr66.7−xNi33.3Cx (x = 0, 1, 3) alloys during mechanical alloying

In the present paper, the effect of carbon on the microstructural evolution of Zr_66.7−xNi_33.3C_x (x = 0, 1, 3) alloys during mechanical alloying has been investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results show that these three alloys undergo similar amorphization and crystallization processes, and the final milling product is a metastable fcc-Zr_66.7−xNi_33.3C_x phase. The carbon addition can shorten the milling time for the complete amorphization reaction and enhance the stability of the formed amorphous alloy, which can suppress the mechanically induced amorphous-crystalline phase transformation with further increasing milling time.     

Three-dimensional structure of fast ion conducting 0.5Li2S + 0.5[(1 − x)GeS2 + xGeO2] glasses from high-energy X-ray diffraction and reverse Monte Carlo simulations

A high-energy X-ray diffraction study has been carried out on a series of 0.5Li₂S + 0.5[(1 − x)GeS₂ + xGeO₂] glasses with x = 0.0, 0.1, 0.2, 0.4, 0.6 and 0.8. Structure factors were measured to wave vectors as high as 30 Å⁻¹ resulting in atomic pair distribution functions with high real space resolution. The three dimensional atomic-scale structure of the glasses was modeled by reverse Monte Carlo simulations based on the diffraction data. Results from the simulations show that at the atomic-scale 0.5Li₂S + 0.5[(1 − x)GeS₂ + xGeO₂] glasses may be viewed as an assembly of independent chains of (Li^+-S)₂GeS_2/2 and (Li^+-O)₂GeO_2/2 tetrahedra as repeat units, where the Li ions occupy the open space between the chains. The new structure data may help understand the reasons for the sharp maximum in the Li⁺ ion conductivity at x ∼ 0.2.     

Effect of P2O5 content in two series of soda lime phosphosilicate glasses on structure and properties - Part II: Physical properties

The effect of the variation in phosphate (P₂O₅) content on the properties of two series of bioactive glasses in the quaternary system SiO₂-Na₂O-CaO-P₂O₅ was studied. The first series (I) was a simple substitution of P₂O₅ for SiO₂ keeping the Na₂O:CaO ratio fixed (1:0.87). The second series (II) was designed to ensure charge neutrality in the orthophosphate (), therefore as P₂O₅ was added the Na₂O and CaO content was varied to provide sufficient Na⁺ and Ca²⁺ cations to charge balance the orthophosphate present. Network connectivity’s of the glasses were calculated, and densities and thermal expansion coefficients predicted using the Appen and Doweidar models, respectively. Theoretical densities were measured using the Archimedes principle. Characteristic temperatures, namely the glass transition temperature, T_g, and crystallization temperatures, T_x, were obtained using differential analysis (DTA). Two crystallization exotherms were observed for both glass series (T_xi and T_xii). Both T_g and T_x decreased with P₂O₅ addition for both series. The working range of the glasses, T_x-T_g was shown to increase to a maximum at around 4 mol% P₂O₅ then decrease at higher P₂O₅ contents for both series. Thermal expansion coefficients were measured using dilatometry increasing with P₂O₅ addition and showed good agreement with the Appen values. Dilatometric softening points, T_s, were also measured, which increased with P₂O₅ addition. X-ray diffraction (XRD) was performed on the glasses to confirm their amorphous nature. The glass containing 9.25 mol% P₂O₅ from series I exhibited well-defined peaks on the XRD trace, indicating the presence of a crystalline phase.     

A sharp thermally reversing window in As45Te55−xIx chalcohalide glasses revealed by alternating differential scanning calorimetry and photo thermal deflection studies

The composition dependence of different thermal parameters such as glass transition temperature, non-reversing enthalpy, thermal diffusivity etc., of bulk As₄₅Te_55−xI_x chalcohalide glasses (3 ? x ? 10), has been evaluated using the temperature modulated Alternating Differential Scanning Calorimetry (ADSC) and Photo Thermal Deflection (PTD) studies. It is found that there is not much variation in the glass transition temperature of As₄₅Te_55−xI_x glasses, even though there is a wide variation in the average coordination number . This observation has been understood on the basis that the variation in glass transition temperature of network glasses is dictated by the variation in average bond energy rather than . Further, it is found that both the non-reversing enthalpy (ΔH_nr) and the thermal diffusivity (α) exhibit a sharp minimum at a composition x = 6. A broad hump is also seen in glass transition and crystallization temperatures in the composition range 5 ? x ? 7. The results obtained clearly indicate a sharp thermally reversing window in As₄₅Te_55−xI_x chalcohalide glasses around the composition x = 6.     

Preparation, phase transformation and microstructure of ZrxTi1−xO2 (x = 0.1-0.9) fine fibers

Zr_xTi_1−xO₂ (x = 0.1-0.9) fibers were prepared by the sol-gel dry-spinning method. Polyacetylacetonatozirconium (PAZ) and tetrabutyl titanate (C₁₆H₃₆O₄Ti) were used as raw materials. The green fibers were obtained from the amorphous spinnable solution and then heat-treated to convert into polycrystalline fibers. The main phase changes from TiO₂ to zirconium titanate (ZT) and then tetragonal ZrO₂ with increasing ZrO₂ content. The crystallization temperature varied with the molar ratio of Zr:Ti. The heat-treated fibers at 1050 °C have few pores and no cracks with diameters of 10-20μm and lengths of 1-5 cm.     

The glass transition temperature and infrared absorption spectra of: (70−x)TeO2 + 15B2O3 + 15P2O5 + xLi2O glasses

Glasses of the system: (70−x) TeO₂ + 15B₂O₃ + 15P₂O₅ + xLi₂O, where x = 5, 10, 15, 20, 25 and 30 mol% were prepared by melt quench technique. Dependencies of their glass transition temperatures (T_g) and infrared (IR) absorption spectra on composition were investigated. It is found that the gradual replacement of oxides, TeO₂ by Li₂O, decreases the glass transition temperature and increases the fragility of the glasses. Also, IR spectra revealed broad weak and strong absorption bands in the investigated range of wave numbers from 4000 to 400 cm⁻¹. These bands were assigned to their corresponding bond modes of vibration with relation to the glass structure.     

Crystal/glass phase change in K1−xRbxSb5S8 (x = 0.25, 0.50, 0.75) studied through thermal analysis techniques

K_1−xRb_xSb₅S₈ (x = 0.25, 0.5, 0.75) is a well-defined single-phase system that undergoes a reversible phase-change. We determined the activation energy of glass transition and crystallization, respectively, for the three compositions using the Kissinger and Ozawa-Flynn-Wall equations. The results have shown that for K_0.25Rb_0.75Sb₅S₈ the crystallization mechanism could be interpreted in terms of a single-step reaction. For the other two compositions the glass-to-crystal transformation is a process of increasing mechanistic complexity with time and it involves simultaneously several different nucleation and growth events. The slope of the lines in the Avrami plots was observed to be independent of heating rate for K_0.25Rb_0.75Sb₅S₈ and the mean value of the activation energy was found to be 262 ± 6 kJ/mol. For the other two compositions, the slope varies with the heating rate. In the K_0.25Rb_0.75Sb₅S₈ glasses, bulk nucleation with three-dimensional crystal growth appears to dominate the phase-change process.     

Crystallization kinetics of Fe73.5−xMnxCu1Nb3Si13.5B9 (x = 0, 1, 3, 5, 7) amorphous alloys

In this study, we have investigated the effect of substituting Mn for Fe on the crystallization kinetics of amorphous Fe_73.5−xMn_xCu₁Nb₃Si_13.5B₉ (x = 1, 3, 5, 7) alloys. The samples were annealed at 550 °C and 600 °C for 1 h under an argon atmosphere. The X-ray diffraction analyses showed only a crystalline peak belonging to the α-Fe(Si) phase, with the grain size ranging from 12.2 nm for x = 0 to 16.7 nm for x = 7. The activation energies of the alloys were calculated using Kissinger, Ozawa and Augis-Bennett models based on differential thermal analysis data. The Avrami exponent n was calculated from the Johnson-Mehl-Avrami equation. The activation energy increased up to x = 3, then decreased with increasing Mn content. The values of the Avrami exponent showed that the crystallization is typical diffusion-controlled three-dimensional growth at a constant nucleation rate.     

Low-temperature/high-temperature AlN superlattice buffer layers for high-quality AlxGa1−xN on Si (1 1 1)

We present MOVPE-grown, high-quality Al_xGa_1−x N layers with Al content up to x=0.65 on Si (1 1 1) substrates. Crack-free layers with smooth surface and low defect density are obtained with optimized AlN-based seeding and buffer layers. High-temperature AlN seeding layers and (low temperature (LT)/high temperature (HT)) AlN-based superlattices (SLs) as buffer layers are efficient in reducing the dislocation density and in-plane residual strain. The crystalline quality of Al_xGa_1−xN was characterized by high-resolution X-ray diffraction (XRD). With optimized AlN-based seeding and SL buffer layers, best ω-FWHMs of the (0 0 0 2) reflection of 540 and 1400 arcsec for the (1 0 1¯ 0) reflection were achieved for a ∼1-μm-thick Al_0.1Ga_0.9N layer and 1010 and 1560 arcsec for the (0 0 0 2) and (1 0 1¯ 0) reflection of a ∼500-nm-thick Al_0.65Ga_0.35N layer. AFM and FE-SEM measurements were used to study the surface morphology and TEM cross-section measurements to determine the dislocation behaviour. With a high crystalline quality and good optical properties, Al_xGa_1−x N layers can be applied to grow electronic and optoelectronic device structures on silicon substrates in further investigations.     

Fabrication of (1 1 1)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application

We have prepared (1 1 1)-oriented Si layers on SiO₂ (fused silica) substrates from amorphous-Si(a-Si)/Al or Al/a-Si stacked layers using an aluminum-induced crystallization (AIC) method. The X-ray diffraction (XRD) intensity from the (1 1 1) planes of Si was found to depend significantly on growth conditions such as the thicknesses of Si and Al, deposition order (a-Si/Al or Al/a-Si on SiO₂), deposition technique (sputtering or vacuum evaporation) and exposure time of the Al layer to air before the deposition of Si. The crystal orientation of the Si layers was confirmed by θ−2θ, 2θ XRD and electron backscatter diffraction (EBSD). The photoresponse properties of semiconducting BaSi₂ films formed on the (1 1 1)-oriented Si layers by the AIC method were measured at room temperature. Photocurrents were clearly observed for photon energies greater than 1.25 eV. The external quantum efficiencies of the BaSi₂ were also evaluated.     

High field electrical switching behavior of Ge10Se90−xTlx glasses

Electrical switching studies on bulk Ge₁₀Se_90−xTl_x (15 ? x ? 34) glasses have been undertaken to examine the type of switching, composition and thickness dependence of switching voltages. Unlike Ge-Se-Tl thin films which exhibit memory switching, the bulk Ge₁₀Se_90−xTl_x glasses are found to exhibit threshold type switching with fluctuations seen in their current-voltage (I-V) characteristics. Further, it is observed that the switching voltages (V_T) of Ge₁₀Se_90−xTl_x glasses decrease with the increase in the Tl concentration. An effort has been made to understand the observed composition dependence on the basis of nature of bonding of Tl atoms and a decrease in the chemical disorder with composition. In addition, the network connectivity and metallicity factors also contribute for the observed decrease in the switching voltages of Ge₁₀Se_90−xTl_x glasses with Tl addition. It is also interesting to note that the composition dependence of switching voltages of Ge₁₀Se_90−xTl_x glasses exhibit a small cusp around the composition x = 22, which is understood on the basis of a thermally reversing window in this system in the composition range 22 ? x ? 30. The thickness dependence of switching voltages has been found to provide an insight about the type of switching mechanism involved in these samples.     

The effect of temperature and ammonia flux on the surface morphology and composition of InxAl1−xN epitaxial layers

An interesting recent development in the Group III nitrides is the growth of InAlN lattice matched to GaN, with applications in distributed Bragg reflectors (DBRs), high electron mobility transistors (HEMTs) and as etch-layers. This work presents a systematic study of the effects of changing the key growth conditions of ammonia flux and growth temperature in InAlN growth by metal-organic vapour phase epitaxy (MOPVE) and describes our current optimised parameter set. We also particularly concentrate on the details of surface morphology assessed by atomic force microscopy (AFM). The nanoscale surfaces are characterised by low hillocks and dislocation pits, while at a larger scale microscopic indium droplets are also present. However, these droplets are eliminated when the layers are capped with GaN. Other trends observed are that increasing the growth temperature will lower the indium incorporation approximately linearly at a rate of approximately 0.25% per °C, and that increasing the ammonia flux from 44.6 to 178.6 mmol min⁻¹ increased the indium incorporation, but further increases to 446 mmol min⁻¹ did not result in any further increase.     

Structure and properties of Ni60(Nb100−xTax)34Sn6 bulk metallic glass alloys

Refractory bulk metallic glasses and bulk metallic glass composites are formed in quaternary Ni-Nb-Ta-Sn alloy system. Alloys of composition Ni₆₀(Nb_100−xTa_x)₃₄Sn₆ (x = 20, 40, 60, 80) alloys were prepared by injection-casting the molten alloys into copper molds. Glassy alloys are formed in the thickness of half mm strips. With thicker strips (e.g., 1 mm), Nb₂O₅ and Ni₃Sn phases and the amorphous phase form an in situ composite. Glass transition temperatures, crystallization temperatures, and ΔT_x, defined as T_x1 − T_g (T_x1: first crystallization temperature, T_g: glass transition temperature) of the alloys increase dramatically with increasing Ta contents. These refractory bulk amorphous alloys exhibit high Young’s modulus (155-170 GPa), shear modulus (56-63 GPa), and estimated yield strength (3-3.6 GPa).     

Far-infrared transmission and bonding arrangement in Ge10Se90−xTex semiconducting glassy alloys

The far-infrared spectra of Ge₁₀Se_90−xTe_x where x = 0, 10, 20, 30, 40, 50 glassy alloys were measured in the wavenumber region 50-650 cm⁻¹ at room temperature. The results were explained in terms of the vibrations of the isolated molecular units. The addition of Te in Ge₁₀Se₉₀ has shown the appearance of GeTe₂ and GeTe₄ molecular units and vibrations of Se-Te bond as Se_8−xTe_x mixed rings. The assignment of various absorption bands has been made on the basis of absorption spectra of pure Se, binary Ge-Se, Ge-Te, Se-Te and ternary Ge-Se-Te glassy alloys. The far-infrared transmission spectrum has been found to shift a little towards lower wavenumber side with the addition of Te content to Ge₁₀Se₉₀. The addition of Te to Ge-Se system replacing Se has found to reduce the Se-Se bonds and Ge-Se bonds and leads to the formation of Se-Te, Ge-Te and Te-Te bonds.     

Spectrometric and ellipsometric studies of (1 − x)TiO2 · xLn2O3 (Ln = Nd, Sm, Gd, Er, Yb) thin films

Spectrometric and ellipsometric studies of (1 − x)TiO₂ · xLn₂O₃ (Ln = Nd, Sm, Gd, Er, Yb; x = 0.33, 0.5) thin films at room temperature were performed. The obtained dispersion dependences of refractive indices are successfully described by the optical-refractometric relation. The dependence of optical pseudogap and refractive indices on composition and molar mass of the films is investigated. The influence of compositional disordering on the energy width of the exponential absorption edge is studied.     

Spectroscopic properties of Er-doped xGeO2-(80 − x)TeO2-10ZnO-10BaO glasses

Erbium-doped glasses with composition xGeO₂-(80 − x)TeO₂-10ZnO-10BaO were prepared by melt-quenching technique. The phonon sideband spectra and the optical absorption band edges for the host matrix were confirmed by means of the spectral measurements. Standard Judd-Ofelt calculations have been completed to these glasses. The dependence of up-conversion and infrared emission under 980 nm excitation on the glass composition was studied. The quantum efficiencies for the ⁴I_13/2 → ⁴I_15/2 transition of trivalent erbium in the glasses were estimated.     

FTIR, XRD and ac impedance spectroscopic study on PVA based polymer electrolyte doped with NH4X (X = Cl, Br, I)

The present study focuses on characterizing PVA: NH₄X (X = Cl, Br, I) proton conducting polymer electrolyte prepared by solution casting technique using XRD, FTIR and ac impedance spectroscopic studies. The XRD patterns of all the prepared polymer electrolytes reveal the amorphous nature of the films. The FTIR spectroscopic study indicates the detailed interaction of PVA with proton. From ac impedance spectroscopic studies, it has been found that PVA doped with NH₄I have high ionic conductivity (2.5 × 10⁻³S cm⁻¹) than PVA doped with NH₄Br (5.7 × 10⁻⁴S cm⁻¹) and NH₄Cl (1.0 × 10⁻⁵S cm⁻¹) polymer electrolytes. This is due to the large anionic size and low lattice energy of NH₄I (in comparison with NH₄Br and NH₄Cl).The temperature dependence of ionic conductivity for all the PVA: NH₄X (X = Cl, Br, I) polymer films obey Arrhenius equation. Ionic transference number measured has been found to be in the range of 0.93-0.96 for all the polymer electrolytes proving that the total conductivity is mainly due to ions.     

Mg doping behavior of MOVPE InxGa1−xN (x∼0.4)

The Mg doping behavior of MOVPE indium gallium nitride (InGaN), such as secondary ion mass spectrometry (SIMS) Mg profile, crystalline quality and n–p conversion of the films are described and discussed in this paper. The SIMS analysis reveals that the memory effect of Cp₂Mg as a doping source deteriorates the controllability of Mg doping level and profile, especially for thin (−0.4 μm) InGaN. The high residual donors (10¹⁹–10²⁰ cm⁻³) in InGaN with In content from 0.05 to 0.37 can be compensated by Mg doping and p-type conduction is obtained for those with In content up to 0.2. It is found that a higher Cp₂Mg flow rate is needed to get p-type conduction in InGaN with a higher In content x; for example, Cp₂Mg/(TEG+TMI)≈0.5% for x=0 (GaN), ≈2% for x=0.05 and ≈4% for x=0.2. Such a high Cp₂Mg flow rate is needed due to the high residual donor concentration (10¹⁹–10²⁰ cm⁻³) of InGaN films and the low activation efficiency of Mg. The crystalline quality of InGaN is deteriorated with increasing In content as well as Mg doping level. To achieve a p-type InGaN with a lower Mg doping, it is essential to improve the crystalline quality of non-doped InGaN. For this purpose, the use of a thicker GaN interlayer is effective.     

RDF analysis, positron annihilation and Raman spectroscopy of xTiO2-(60 − x)SiO2-40Na2O non-linear optical glasses: III. Non-bridging oxygen bonds tracing and structure analysis

xTiO₂-(60 − x)SiO₂-40Na₂O glasses have proven an interesting linear and non-linear optical properties [M. Abdel-Baki, F. Abdel Wahab, F. El-Diasty, Mater. Chem. Phys. 96 (2006) 201]. The investigated glasses show one order of magnitude enhancement for the second-order index of refraction and third-order optical susceptibility over some TiO₂ silicate glasses. In this work, we continue studying these glasses using three different techniques to analyze the glass structures seeking to provide a deep insight for the relation between structure, compositions and the optical characteristics of these glasses. Radial Distribution Function analysis (RDF) combined Raman spectroscopy are used to study these glasses. Positron annihilation lifetime spectroscopy and Doppler broadening measurements are carried out to investigate the change in the glass structure as the incorporation of TiO₂ concentration into glass. The origin of the non-bridging oxygen (NBO) bonds has been traced to correlate their existence with the measured non-linear optical properties of the investigated glasses.