Low-temperature/high-temperature AlN superlattice buffer layers for high-quality AlxGa1−xN on Si (1 1 1)

We present MOVPE-grown, high-quality Al_xGa_1−x N layers with Al content up to x=0.65 on Si (1 1 1) substrates. Crack-free layers with smooth surface and low defect density are obtained with optimized AlN-based seeding and buffer layers. High-temperature AlN seeding layers and (low temperature (LT)/high temperature (HT)) AlN-based superlattices (SLs) as buffer layers are efficient in reducing the dislocation density and in-plane residual strain. The crystalline quality of Al_xGa_1−xN was characterized by high-resolution X-ray diffraction (XRD). With optimized AlN-based seeding and SL buffer layers, best ω-FWHMs of the (0 0 0 2) reflection of 540 and 1400 arcsec for the (1 0 1¯ 0) reflection were achieved for a ∼1-μm-thick Al_0.1Ga_0.9N layer and 1010 and 1560 arcsec for the (0 0 0 2) and (1 0 1¯ 0) reflection of a ∼500-nm-thick Al_0.65Ga_0.35N layer. AFM and FE-SEM measurements were used to study the surface morphology and TEM cross-section measurements to determine the dislocation behaviour. With a high crystalline quality and good optical properties, Al_xGa_1−x N layers can be applied to grow electronic and optoelectronic device structures on silicon substrates in further investigations.     

Thermal conductivity and specific heat of bulk amorphous chalcogenides Ge20Te80−xSex (x = 0,1,2,8)

Bulk amorphous chalcogenide samples of Ge₂₀Te_80−xSe_x (x = 0, 1, 2, 8) have been prepared using a melting-quench method, and characterized by the differential scanning calorimetry, X-ray powder diffraction, high-resolution transmission electron microscopy, specific heat and thermal conductivity measurements. The low temperature specific heat measurements identified some localized low-frequency oscillation modes (Einstein modes) in conjunction with a Debye-like behavior. It was found that with increasing Se concentration the characteristic Debye temperature did not change whereas the Einstein temperature slightly decreased. The lattice thermal conductivity of all Ge₂₀Te_80−xSe_x samples exhibited typical amorphous heat conduction behavior, which has been discussed in connection with the phonon mean free path and in the context of a phenomenological model of heat conduction for highly disordered system.     

Effect of carbon on the microstructural evolution of Zr66.7−xNi33.3Cx (x = 0, 1, 3) alloys during mechanical alloying

In the present paper, the effect of carbon on the microstructural evolution of Zr_66.7−xNi_33.3C_x (x = 0, 1, 3) alloys during mechanical alloying has been investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results show that these three alloys undergo similar amorphization and crystallization processes, and the final milling product is a metastable fcc-Zr_66.7−xNi_33.3C_x phase. The carbon addition can shorten the milling time for the complete amorphization reaction and enhance the stability of the formed amorphous alloy, which can suppress the mechanically induced amorphous-crystalline phase transformation with further increasing milling time.     

Calculation of phase diagrams in AlxIn1−xAs/InP,AsxSb1−xAl/InP and AlxIn1−xSb/InSb nano-film systems

The models for calculation of phase diagrams of semiconductor thin films with different substrates were proposed by considering the contributions of strain energy, the self-energy of misfit dislocations and surface energy to Gibbs free energy. The phase diagrams of the Al_xIn_1−xAs and As_xSb_1−xAl thin films grown on the InP (1 0 0) substrate, and the Al_xIn_1−xSb thin films grown on the InSb (1 0 0) substrate at various thicknesses were calculated. The calculated results indicate that when the thickness of film is less than 1 μm, the strain-induced zinc-blende phase appears, the region of this phase extends with decreasing of the layer thickness, and there is small effect of surface energies of liquid and solid phases on the phase diagrams.     

The effect of temperature and ammonia flux on the surface morphology and composition of InxAl1−xN epitaxial layers

An interesting recent development in the Group III nitrides is the growth of InAlN lattice matched to GaN, with applications in distributed Bragg reflectors (DBRs), high electron mobility transistors (HEMTs) and as etch-layers. This work presents a systematic study of the effects of changing the key growth conditions of ammonia flux and growth temperature in InAlN growth by metal-organic vapour phase epitaxy (MOPVE) and describes our current optimised parameter set. We also particularly concentrate on the details of surface morphology assessed by atomic force microscopy (AFM). The nanoscale surfaces are characterised by low hillocks and dislocation pits, while at a larger scale microscopic indium droplets are also present. However, these droplets are eliminated when the layers are capped with GaN. Other trends observed are that increasing the growth temperature will lower the indium incorporation approximately linearly at a rate of approximately 0.25% per °C, and that increasing the ammonia flux from 44.6 to 178.6 mmol min⁻¹ increased the indium incorporation, but further increases to 446 mmol min⁻¹ did not result in any further increase.     

Crystallization kinetics of Fe73.5−xMnxCu1Nb3Si13.5B9 (x = 0, 1, 3, 5, 7) amorphous alloys

In this study, we have investigated the effect of substituting Mn for Fe on the crystallization kinetics of amorphous Fe_73.5−xMn_xCu₁Nb₃Si_13.5B₉ (x = 1, 3, 5, 7) alloys. The samples were annealed at 550 °C and 600 °C for 1 h under an argon atmosphere. The X-ray diffraction analyses showed only a crystalline peak belonging to the α-Fe(Si) phase, with the grain size ranging from 12.2 nm for x = 0 to 16.7 nm for x = 7. The activation energies of the alloys were calculated using Kissinger, Ozawa and Augis-Bennett models based on differential thermal analysis data. The Avrami exponent n was calculated from the Johnson-Mehl-Avrami equation. The activation energy increased up to x = 3, then decreased with increasing Mn content. The values of the Avrami exponent showed that the crystallization is typical diffusion-controlled three-dimensional growth at a constant nucleation rate.     

Three-dimensional structure of fast ion conducting 0.5Li2S + 0.5[(1 − x)GeS2 + xGeO2] glasses from high-energy X-ray diffraction and reverse Monte Carlo simulations

A high-energy X-ray diffraction study has been carried out on a series of 0.5Li₂S + 0.5[(1 − x)GeS₂ + xGeO₂] glasses with x = 0.0, 0.1, 0.2, 0.4, 0.6 and 0.8. Structure factors were measured to wave vectors as high as 30 Å⁻¹ resulting in atomic pair distribution functions with high real space resolution. The three dimensional atomic-scale structure of the glasses was modeled by reverse Monte Carlo simulations based on the diffraction data. Results from the simulations show that at the atomic-scale 0.5Li₂S + 0.5[(1 − x)GeS₂ + xGeO₂] glasses may be viewed as an assembly of independent chains of (Li^+-S)₂GeS_2/2 and (Li^+-O)₂GeO_2/2 tetrahedra as repeat units, where the Li ions occupy the open space between the chains. The new structure data may help understand the reasons for the sharp maximum in the Li⁺ ion conductivity at x ∼ 0.2.     

Influence of growth temperature on the selective area MOVPE of InAs nanowires on GaAs (1 1 1) B using N2 carrier gas

The influence of temperature on selective area (SA) InAs nanowire growth was investigated for metal-organic vapor phase epitaxy (MOVPE) using N₂ as the carrier gas and (1 1 1) B GaAs substrates. In contrast to the growth temperature range – below 600 °C – reported for hydrogen ambient, the optimal growth temperature between 650 and 700 °C was 100 K higher than the optimal ones for H₂ carrier gas. At these temperatures, nanowires with aspect ratios of about 80 and a symmetric hexagonal shape were obtained. The results found are attributed to the physical and chemical properties of the carrier gas.     

Preparation of a crack-free AlN template layer on sapphire substrate by hydride vapor-phase epitaxy at 1450 °C

A crack-free aluminum nitride (AlN) template layer was grown on a (0 0 0 1) sapphire substrate at 1450 °C using a thin (100 nm) protective AlN layer grown at 1065 °C by hydride vapor-phase epitaxy (HVPE). Full-width at half-maximum (FWHM) values of X-ray rocking curves (XRCs) for (0 0 0 2) and (1 0 1¯ 0) planes of the AlN layer were 378 and 580 arcsec, respectively. The formation of voids was observed at the interface between the thin protective AlN layer and the sapphire substrate due to decomposition reaction of sapphire during heating up to 1450 °C. The voids relaxed the tensile stress in the AlN layer, which resulted in the suppression of cracks.     

Crystal/glass phase change in K1−xRbxSb5S8 (x = 0.25, 0.50, 0.75) studied through thermal analysis techniques

K_1−xRb_xSb₅S₈ (x = 0.25, 0.5, 0.75) is a well-defined single-phase system that undergoes a reversible phase-change. We determined the activation energy of glass transition and crystallization, respectively, for the three compositions using the Kissinger and Ozawa-Flynn-Wall equations. The results have shown that for K_0.25Rb_0.75Sb₅S₈ the crystallization mechanism could be interpreted in terms of a single-step reaction. For the other two compositions the glass-to-crystal transformation is a process of increasing mechanistic complexity with time and it involves simultaneously several different nucleation and growth events. The slope of the lines in the Avrami plots was observed to be independent of heating rate for K_0.25Rb_0.75Sb₅S₈ and the mean value of the activation energy was found to be 262 ± 6 kJ/mol. For the other two compositions, the slope varies with the heating rate. In the K_0.25Rb_0.75Sb₅S₈ glasses, bulk nucleation with three-dimensional crystal growth appears to dominate the phase-change process.     

Size-controlled synthesis of LaAlO3 by reverse micelle method: Investigation of the effect of water-to-surfactant ratio on the particle size

Lanthanum monoaluminate (LaAlO₃) nanoparticles have been synthesized using microreactors made of poly(oxyethylene) nonylphenyl ether (Igepal CO-520)/water/cyclohexane microemulsions. The control of particle size was achieved by varying the water-to-surfactant molar ratio. The synthesized and calcined powders were characterized by thermogravimetry–differential thermal analysis (TGA-DTA), X-ray diffraction analysis (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Fourier transform infrared spectroscopy (FTIR). Differential thermal analysis showed that LaAlO₃ phase transformation decreases with increase in water/surfactant (R) value. Pure LaAlO₃ phase was synthesized by annealing at 800 °C for 2 h in air directly from amorphous precursors, without formation of intermediate phase. The average particle size was found to increase with increase in water-to-surfactant ratio (R). FTIR analysis was carried to monitor the elimination of residual oil and surfactant phases from the microemulsion-derived precursor and calcined powder.     

Fabrication of (1 1 1)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application

We have prepared (1 1 1)-oriented Si layers on SiO₂ (fused silica) substrates from amorphous-Si(a-Si)/Al or Al/a-Si stacked layers using an aluminum-induced crystallization (AIC) method. The X-ray diffraction (XRD) intensity from the (1 1 1) planes of Si was found to depend significantly on growth conditions such as the thicknesses of Si and Al, deposition order (a-Si/Al or Al/a-Si on SiO₂), deposition technique (sputtering or vacuum evaporation) and exposure time of the Al layer to air before the deposition of Si. The crystal orientation of the Si layers was confirmed by θ−2θ, 2θ XRD and electron backscatter diffraction (EBSD). The photoresponse properties of semiconducting BaSi₂ films formed on the (1 1 1)-oriented Si layers by the AIC method were measured at room temperature. Photocurrents were clearly observed for photon energies greater than 1.25 eV. The external quantum efficiencies of the BaSi₂ were also evaluated.     

Spectrometric and ellipsometric studies of (1 − x)TiO2 · xLn2O3 (Ln = Nd, Sm, Gd, Er, Yb) thin films

Spectrometric and ellipsometric studies of (1 − x)TiO₂ · xLn₂O₃ (Ln = Nd, Sm, Gd, Er, Yb; x = 0.33, 0.5) thin films at room temperature were performed. The obtained dispersion dependences of refractive indices are successfully described by the optical-refractometric relation. The dependence of optical pseudogap and refractive indices on composition and molar mass of the films is investigated. The influence of compositional disordering on the energy width of the exponential absorption edge is studied.     

Thermal and some physical properties of glasses in the La2O3−CaO−B2O3 ternary system

Glasses in the La₂O₃−CaO−B₂O₃ ternary system were studied. The glass forming range as determined by the appearance of the annealed cast was found to match previously published findings. Clear glasses were formed in the composition range of 5.7−19.1 mol% La₂O₃ with constant B₂O₃ content of 71.4 mol%, and in glasses of constant La₂O₃:CaO ratio of 1:4 with B₂O₃ content in the range of 71.4-55.0 mol%. The non-linear optical crystalline phase La₂Ca₂B₁₀O₁₉ was crystallized from the clear glasses after heat treatments, as determined by powder XRD. Two types of the LaBO₃ crystalline phases were detected in the partially and the fully crystallized glass compositions outside the glass forming range. Data are reported for the glass transition temperature (T_g), dilatometric softening point (T_d), linear coefficient of expansion (α), onset crystallization temperature (T_x), exothermal peak temperature (T_P), density (ρ) and index of refraction (n_D) in the clear glasses.     

Growth of InxGa1−xN quantum dots by nitridation of nano-alloyed droplet method using MOCVD

In_xGa_1−xN quantum dots (QDs) were grown on GaN/sapphire (0 0 0 1) substrates by employing nitridation of nano-alloyed droplet (NNAD) method using metal-organic chemical vapor deposition (MOCVD). In+Ga alloy droplets were initially formed by flowing the precursors TMIn and TMGa. Density of the In+Ga alloy droplets was increased with increasing precursors flow rate; however, the droplet size was scarcely changed in the range of about 100–200 nm. Two cases of In_xGa_1−xN QDs growth were investigated by varying the nitridation time and the growth temperature. It was observed that the In_xGa_1−xN QDs size can be easily changed by controlling the nitridation process at the temperature between 680 and 700 °C for the time of 5–30 min. Self-assembled In_xGa_1−xN QDs were successfully grown by employing NNAD method.     

Occurrence of Kondo-like behavior in electrical-conductivity of Al70Pd20+xMn10−x (x = 0, 1 and 2) icosahedral quasicrystals

Zero-field and in-field (at 8 T) conductivity vs temperature (σ-T), magneto-resistance (Δρ/ρ), magnetization vs temperature (M-T) and magnetization vs field (M-H) of unannealed Al₇₀Pd₂₀Mn₁₀ and annealed Al₇₀Pd₂₀Mn₁₀, Al₇₀Pd₂₁Mn₉ and Al₇₀Pd₂₂Mn₈ quasicrystalline alloys have been studied in the temperature range of 1.4-300 K. Room temperature resistivity and the low-temperature magneto-resistance show a correlation with the corresponding magnetization. The σ-T for all the studied samples shows a pair of minima and maxima. The σ-T maxima show a correlation with the total magnetization. The analysis shows that σ-T is dominated by weak-localization effects. The minima are arising due to competing inelastic scattering times τ_i (e-ph scattering in the dirty metallic limit, τ_i ∝ T⁻²) and the Kondo-type spin-flip scattering time τ_sf whereas the maxima has been attributed to ‘Kondo-maxima’, occurring due to maxima in the spin-flip rate . The magneto-resistance of these samples shows a changeover from negative to positive where the negative component shows a correlation with the magnetization of the sample. The values of parameters derived from refinement give spin-flip scattering fields, which are found to be correlated with the total sample magnetization.     

Sodium tracer diffusion in glasses of the type (CaO·Al2O3)x(2 SiO2)1−x

Tracer diffusion coefficients of the radioactive isotope Na-22 were measured in glasses of the type (CaO·Al₂O₃)_x(2 SiO₂)_1−x to study the diffusion of sodium as a function of glass composition, x, temperature and initial water content. The diffusion of Na-22 in glasses diffusion-annealed in dry air can always be well described by a single tracer diffusion coefficient, but sometimes not in samples annealed in common air. It was found that the sodium tracer diffusion coefficient decreases by about six orders of magnitude when the glass composition x changes from 0 to 0.75 at 800 °C. The temperature dependence of the diffusion of sodium seems to decrease as the silica content increases. Variations of the initial water content in some of the glasses investigated did not very significantly influence the rate of the tracer diffusion of sodium.     

Bulk single-crystal growth of ternary AlxGa1−xN from solution in gallium under high pressure

We have successfully grown bulk, single crystals of Al_xGa_1−xN with the Al content x ranging from 0.5 to 0.9. Samples were grown from Ga melt under high nitrogen pressure (up to 10 kbar) and at high temperature (up to 1800 °C) using a gas pressure system. The homogeneity and Al content of the crystals were investigated by X-ray diffraction and laser ablation mass spectrometry. On the basis of the high-pressure experiments, the corresponding pressure–temperature (p–T) phase diagram of Al–Ga–N was derived. The bandgap of the material was determined by the femtosecond two-photon absorption autocorrelation method and is equal to 5.81±0.01 eV for the Al_0.86Ga_0.14N crystals.     

Mg doping behavior of MOVPE InxGa1−xN (x∼0.4)

The Mg doping behavior of MOVPE indium gallium nitride (InGaN), such as secondary ion mass spectrometry (SIMS) Mg profile, crystalline quality and n–p conversion of the films are described and discussed in this paper. The SIMS analysis reveals that the memory effect of Cp₂Mg as a doping source deteriorates the controllability of Mg doping level and profile, especially for thin (−0.4 μm) InGaN. The high residual donors (10¹⁹–10²⁰ cm⁻³) in InGaN with In content from 0.05 to 0.37 can be compensated by Mg doping and p-type conduction is obtained for those with In content up to 0.2. It is found that a higher Cp₂Mg flow rate is needed to get p-type conduction in InGaN with a higher In content x; for example, Cp₂Mg/(TEG+TMI)≈0.5% for x=0 (GaN), ≈2% for x=0.05 and ≈4% for x=0.2. Such a high Cp₂Mg flow rate is needed due to the high residual donor concentration (10¹⁹–10²⁰ cm⁻³) of InGaN films and the low activation efficiency of Mg. The crystalline quality of InGaN is deteriorated with increasing In content as well as Mg doping level. To achieve a p-type InGaN with a lower Mg doping, it is essential to improve the crystalline quality of non-doped InGaN. For this purpose, the use of a thicker GaN interlayer is effective.     

Structure and properties of glasses in the MI + M2S + (0.1Ga2S3 + 0.9GeS2), M = Li, Na, K and Cs, system

The structure and properties of glasses in the MI + M₂S + (0.1Ga₂S₃ + 0.9GeS₂), M = Li, Na, K and Cs, system were studied using Raman, IR spectroscopy, DSC and density measurements to help better understand the ionic transport in these glasses. The glass forming ranges of these ternary glasses were compared to those of the binary alkali sulfide and germanium sulfide systems. The more extensive glass forming range in the Na₂S system was used to examine the more extensive changes of structure and properties of these glasses as a function of Na₂S content. As expected, non-bridging sulfurs (NBS) form with the addition of alkali sulfide. Unlike their oxide counterparts, however, the alkali sulfide doped glasses appear to support longer-range super-structural units. For example, evidence that the adamantine-like structure exists in the K₂S and Cs₂S modified glasses is found in the Raman spectra of the glasses. The structural role of the alkali iodide addition was also explored since the addition of alkali iodide helps to improve the conductivity. For most of these glasses, as observed in many other oxide glasses, the added MI dissolves interstitially into the glass structure network without changing the alkali sulfide network structure. In 0.6Na₂S + 0.4(0.1Ga₂S₃ + 0.9GeS₂) glasses, however, the added NaI may affect the glass structure as it causes systematic changes in the frequency of the Ge-S network mode as seen in the Raman spectra.