Development of optical nonlinearity, high dielectric constant and ferromagnetic behavior in a silicate glass nanocomposite by suitable heat treatment

We have explored the development of multifunctionalities viz, optical nonlinearity, high dielectric constant and ferromagnetic behavior in a nanostructured silica based glass of 14.0Na₂O, 26.0BaO, 26.0TiO₂, 16.0B₂O₃, 17.0SiO₂, 1.0NiO (mol%) composition. A heat treatment at 863 K for 4 h led to nonlinear refractive index and absorption coefficients at wavelength 800 nm of 0.11 × 10⁻¹⁹ m²/W and 1.15 × 10⁻³ cm/GW, respectively. A heat treatment at 1073 K for 2 h followed by 1113 K for 3 h increased the dielectric constant from 11 to 50, apparently due to the formation of nanocrystals of BaTiO₃ within the glass medium. Glass samples reduced at 923 K for 1 h exhibited ferromagnetic behavior due to the presence of nickel nanoparticles.     

Near infrared and blue cooperative emissions in Yb-doped GeO2-PbO glasses

In previous years there has been great interest in new materials for photonic devices operating at infrared (IR) and visible (VIS) regions. We report here near infrared and blue cooperative luminescence properties for Yb³⁺-doped GeO₂-PbO glasses. Luminescence and lifetime measurements in the VIS and near-IR regions were performed to investigate the spectroscopic characteristics of the glasses. Intense emissions around 507 and 1010 nm were observed using 980 and 808 nm excitation, respectively. The VIS lifetimes (∼0.4 ms) are about half of their respective near infrared ones (∼0.8 ms), as expected for materials in which the VIS emission is caused by the cooperative effect. Regarding the IR emission, the glasses exhibited a high absorption cross-section (1.2 × 10⁻²⁰ cm²) at 978 nm and an emission cross-section of 0.6 × 10⁻²⁰ cm², at 1010 nm, with a minimum pump intensity of 2.8 kW/cm². These results suggest this glass composition as a potential material to be used in devices operating in the VIS and IR spectral range, such as 3-D displays and infrared lasers.     

Development and characterizations of BaO-CaO-Al2O3-SiO2 glass-ceramic sealants for intermediate temperature solid oxide fuel cell application

Several compositions based on BaO-CaO-Al₂O₃-SiO₂ (BCAS) glass system have been studied in this investigation to see their applicability as sealant for solid oxide fuel cell (SOFC). The glasses as well as the corresponding glass-ceramics have been systematically characterized by differential thermal analysis, dilatometry, X-ray diffractometry, electron microscopy and impedance analysis to examine their suitability as sealant. While the glass transition temperature (T_g) determined from DTA are within 600-665 °C, the coefficient of thermal expansion (CTE) can be tailored between 9.5 and 13.0 × 10⁻⁶ K⁻¹. These glasses are found to be well adhered with metallic interconnects, such as commercial ferritic steel (Crofer22APU), at an optimum sealing temperature of 850 °C. The shrinkage behavior of the developed glasses in their pellet form has also been investigated. The resistivities of the glass-ceramics, as obtained from impedance analysis, are found to be within 10⁴-10⁶ Ω cm at 800 °C. Under sandwiched condition between two metals, some of the developed compositions are found to maintain this high resistivity even after 100 h of operation. One of the glass compositions has shown a low leak-rate of the order of ∼10⁻⁷ Pa m² s⁻¹.     

Electrical, structural and optical properties of SnO2 thin films prepared by spray pyrolysis

This study investigated the effect of the substrate temperature on the structural, optical, morphological, and electrical properties of undoped SnO₂ films prepared by a spray deposition method. The films were deposited at various substrate temperatures ranging from 300-500 °C in steps of 50 °C and characterized by different optical and structural techniques. X-ray diffraction studies showed that the crystallite size and preferential growth directions of the films were dependent on the substrate temperature. These studies also indicated that the films were amorphous at 300 °C and polycrystalline at the other substrate temperatures used. Infrared and visible spectroscopic studies revealed that a strong vibration band, characteristic of the SnO₂ stretching mode, was present around 630 cm⁻¹ and that the optical transmittance in the visible region varied over the range 75-95% with substrate temperature, respectively. The films deposited at 400 °C exhibited the highest electrical conductivity property.     

Thermo-optic properties of B2O3 doped Li2O-Al2O3-SiO2 glass-ceramics

Reduction in the temperature coefficient of the optical path length, dS/dT of Li₂O-Al₂O₃-SiO₂ glass-ceramics with near-zero thermal expansion coefficient was attempted using control of the temperature coefficient of electronic polarizability, ?, and the thermal expansion coefficient, α. The dS/dT value of 2.6 mol% B₂O₃-doped glass-ceramic was 12.5  × 10⁻⁶/°C, which was 0.9 ×  10⁻⁶/°C smaller than that of B₂O₃-free glass-ceramic. On the other hand, reduction in dS/dT through B₂O₃ doping was not confirmed in precursor glasses. Results showed that reduction in dS/dT of the glass-ceramic through B₂O₃ doping is caused by the reduction in ?. The reduction in ? from B₂O₃ doping was probably attributable to numerical reduction in non-bridging oxide ions with larger ? value by the concentration of boron ions in the residual glass phase. In addition, application of hydrostatic pressure during crystallization was effective to inhibit precipitation of β-spodumene solid solution, which thereby decreases dS/dT. The dS/dT value of B₂O₃-doped glass-ceramic crystallized under 196 MPa was 11.7 ×  10⁻⁶/°C. That value was slightly larger than that of silica glass. The α value of this glass-ceramic was smaller than that of silica glass.     

Spectroscopic properties of Er-doped Na2O-Sb2O3-B2O3-SiO2 glasses

Spectroscopic properties of Er³⁺-doped Na₂O-Sb₂O₃-B₂O₃-SiO₂ glasses have been investigated for developing 1.5-μm broadband fiber amplifiers. An intense 1.5-μm near infrared emission with a broad full width at half maximum (FWHM) of 88 nm has been obtained for Er³⁺-doped 5Na₂O-20Sb₂O₃-35B₂O₃-40SiO₂ glass upon excitation with a 980 nm laser diode. The obtained emission cross-section of the ⁴I_13/2 → ⁴I_15/2 transition and the lifetime of the ⁴I_13/2 level of Er³⁺ ions are 6.8 × 10⁻²¹ cm² and 0.36 ms, respectively. It is noted that the product of the emission cross-section and the FWHM of the glass, σ_e × FWHM, is as great as 598.4 × 10⁻²¹ cm² nm, which is comparable or higher than that of Er³⁺-doped bismuth-based and tellurite-based glasses. These special optical properties encourage in identifying them as important materials for potential applications in high performance optics and optical communication networks.     

Extrusion of chalcogenide glass preforms and drawing to multimode optical fibers

We report on viscosity of a Ge₁₇As₁₈Se₆₅ glass over the temperature range of 280-420 °C and the successful co-extrusion and fiber-drawing of two chalcogenide glass boules to form a core/clad. pair. The co-extrusion produces a preform with optimum diameter stability and core/clad. glass ratio, and minimum defects at the core/clad. interface in the middle 120-200 mm region of a 270 mm long preform. Core/clad. fiber is drawn successfully from the extruded preform. An optical loss of 1.7 dB m⁻¹ at 1666 cm⁻¹ (6.0 μm) and 6.7 dB m⁻¹ at 6649 cm⁻¹ (1.55 μm) is reported.     

Synthesis and characterization of ilmenite NiTiO3 and CoTiO3 prepared by a modified Pechini method

Powders of ilmenite structure NiTiO₃ and CoTiO₃ were prepared by a simple method based on the modified Pechini process. The raw compounds and citric acid (CA) were mixed in ethanol (EA) with the molar ratio Ni(Co)/Ti/CA/EA = 1/1/1/7.5. The DTA curve shows exothermic peaks only around 300-350 °C and 600 °C, which correspond to the decomposition of the organic compound and direct crystallization of the ilmenite phase. X-ray diffraction patterns indicated that the ilmenite phase was successfully synthesized as the Ni(Co)-Ti precursor calcined above 600-900 °C for 3 h, and the activation energies of NiTiO₃ and CoTiO₃ were calculated to be about 8.84 and 13.23 kJ/mol. TEM bright field images showed that the grain sizes of powders of NiTiO₃ and CoTiO₃ at 600-900 °C were estimated to be about 10-250 and 20-200 nm depending on the nature of the aggregate. The samples of NiTiO₃ calcined at 600-800 °C have the larger specific surface area of 31.51, 18.78, and 6.01 m²/g, respectively. The UV-Vis diffuse reflectance spectra show the optical band gaps of NiTiO₃ and CoTiO₃ as 3.02 and 2.43 eV.     

Structural,electrical and optical properties of SnO2 films deposited on Y-stabilized ZrO2 (1 0 0) substrates by MOCVD

SnO₂ films have been deposited on Y-stabilized ZrO₂ (YSZ) (1 0 0) substrates at different substrate temperatures (500–800 °C) by metalorganic chemical vapor deposition (MOCVD). Structural, electrical and optical properties of the films have been investigated. The films deposited at 500 and 600 °C are epitaxial SnO₂ films with orthorhombic columbite structure, and the HRTEM analysis shows a clear epitaxial relationship of columbite SnO₂(1 0 0)||YSZ(1 0 0). The films deposited at 700 and 800 °C have mixed-phase structures of rutile and columbite SnO₂. The carrier concentration of the films is in the range from 1.15×10¹⁹ to 2.68×10¹⁹ cm⁻³, and the resistivity is from 2.48×10⁻² to 1.16×10⁻² Ω cm. The absolute average transmittance of the films in the visible range exceeds 90%. The band gap of the obtained SnO₂ films is about 3.75–3.87 eV.     

Growth and characterization of c-plane AlGaN on γ-LiAlO2

This study demonstrates a pure c-plane AlGaN epilayer grown on a γ-LiAlO₂ (1 0 0) (LAO) substrate with an AlN nucleation layer grown at a relatively low temperature (LT-AlN) by metal-organic chemical vapor deposition (MOCVD). The AlGaN film forms polycrystalline film with m- and c-plane when the nucleation layer grows at a temperature ranging from 660 to 680 °C. However, a pure c-plane AlGaN film with an Al content of approximately 20% can be obtained by increasing the LT-AlN nucleation layer growth temperature to 700 °C. This is because the nuclei density of AlN increases as the growth temperature increases, and a higher nuclei density of AlN deposited on LAO substrate helps prevent the deposition of m-plane AlGaN. Therefore, high-quality and crack-free AlGaN films can be obtained with a (0 0 0 2) ω-rocking curve FWHM of 547 arcsec and surface roughness of 0.79 nm (root-mean-square) using a 700-°C-grown LT-AlN nucleation layer.     

Gd-incorporation and luminescence properties in sol-gel silica glasses

A thorough study was performed on Gd-doped sol-gel silica glasses, in the concentration range 0-8 mol% Gd. The analyses were carried out as a function of Gd content, before and after a post-densification thermal treatment. Different results concerning optical, vibrational, magnetic, and structural features were gathered in correlated experiments. The presence of Gd-rich nanoclusters was revealed. The size of nanoclusters increases by increasing the dopant concentration and by performing a rapid thermal treatment (RTT) at 1800 °C in air, which causes also a remarkable intensity increase of the ⁶P_7/2 → ⁸S_7/2 radioluminescence transition of Gd³⁺. Nanoclusters are amorphous, possibly close to a Gd₂SiO₅ stoichiometry as suggested by fast Fourier transform infrared spectroscopy (FTIR). FTIR studies revealed also the presence of Gd-dimers interacting with OH⁻ groups. Moreover, the presence of isolated Gd³⁺ ions was detected by electron paramagnetic resonance investigations. Based on the results obtained with different techniques, the Gd-incorporation in silica glass host and the resulting optical properties are discussed.     

The growth of GaAs and InAs dots on etched mesas: The effect of substrate temperature on mesa profile and surface morphology on dot distribution

The molecular beam epitaxy (MBE) growth of GaAs and InAs quantum dots on etched mesas has been studied using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The [0 1 1]-oriented mesas are etched into (1 0 0) GaAs substrates, exposing (5 3 3)B sidewall facets. At a substrate temperature of 610 °C a top (1 0 0) plane is seen to evolve on a ridge mesa structure. Alternatively, if the overgrowth is carried out at 630 °C no such facet is seen, and the top ridge remains unchanged during GaAs growth. By controlling the mesa shape, either ordered lines of dots can be grown or the dot density can be varied from <5×10⁸ cm⁻² to >1×10¹¹ cm⁻² on the same substrate in pre-defined regions. The dot distribution observed on the mesa sidewalls and top is discussed in terms of net migration of adatoms from different facets, underlying step density, step height and surface curvature of the mesa top.     

Characterization of HF-catalyzed silica gels doped with Degussa P25 titanium dioxide

SiO₂/TiO₂ composites were synthesized by adding Degussa P25 TiO₂ to a liquid sol that was catalyzed by HNO₃ and HF acids. Various composites were synthesized by altering the mass loading of TiO₂ and concentration of HF added to the liquid sol before gelation. The resulting materials were characterized by SEM, nitrogen adsorption-desorption, streaming potential, XRD, diffuse reflectance and TiO₂ surface area analyses. Approximate characteristics include an isoelectric point of 3, TiO₂ particle size of 30 nm, and a band gap energy of 3.2 eV. Small variations in these properties were noted for the different composites. Physical characteristics were largely affected by HF concentration and TiO₂ loading. Nitrogen adsorption-desorption isotherms were type IV for all materials and exhibited trends of decreased pore volume with an increase in TiO₂ loading and an increase in pore diameter with increased HF concentration. Surface areas of the composites ranged from 167 to 630 m²/g. Available TiO₂ surface area of the composite was also dependent upon TiO₂ loading and increased as the mass composition of TiO₂ increased but was not largely affected by HF concentration.     

Fluorinated silica glass ablated with ArF excimer laser at low fluence

Amorphous SiO₂ (a-SiO₂) was formed by liquid-phase deposition (LPD) at room temperature. As a result of one shot of ArF excimer laser irradiation, LPD-formed a-SiO₂ shows a threshold fluence for ablation of below than 200 mJ/cm², which is much lower than the threshold fluence (∼1 J/cm²) of a-SiO₂ formed by thermal oxidation of silicon. Raman scattering spectroscopy revealed that two sharp lines at 495 cm⁻¹ and 606 cm⁻¹, respectively, labeled D₁ and D₂, had disappeared, and the main band at 430 cm⁻¹ was sharpened in LPD-formed a-SiO₂. It is presumed that the fluorine broke the silica network, relaxing the Si-O-Si bond angle and dramatically reducing the threshold energy for ablation of a-SiO₂.     

Growth kinetics of SiGe/Si superlattices on bulk and silicon-on-insulator substrates for multi-channel devices

We have studied in reduced pressure chemical vapor deposition the growth kinetics of Si and Si_0.8Ge_0.2 on bulk Si(0 0 1) and on silicon-on-insulator (145 nm buried oxide/20 nm Si over-layer) substrates. For this, we have grown at 650 °C, 20 Torr 19 periods (Si_0.8Ge_0.2 19 nm/Si 32 nm) superlattices on both types of substrates that we have studied in secondary ion mass spectrometry, X-ray diffraction and cross-sectional transmission electron microscopy. The Si and SiGe growth rates together with the Ge content are steady on bulk Si(0 0 1), with mean values around 9.5 nm min⁻¹ and 20.2%, respectively. In contrast, growth rates decrease from ∼9.5 nm min⁻¹ down to values around 7.0 nm min⁻¹ (SiGe) and 6.3 nm min⁻¹ (Si), when the deposited thickness on SOI increases from 0 up to slightly more than 100 nm. They then go back up to values around 8.8–9.0 nm min⁻¹ as the thickness increases from 100 up to 400 nm. They then slowly decrease to values around 8.4–8.6 nm min⁻¹ as the thickness increases from 400 up to 800 nm. The Ge concentration follows on SOI exactly the opposite trend: an increase from 19.9% (0 nm) up to 20.6% (∼100 nm) followed by a decrease to values around 20.1% (400 nm) then a slow re-increase up to 20.4% (800 nm). These fluctuations are most likely due to the following SOI surface temperature variations: from 650 °C down to 638 °C (100 nm), back up to 648 °C (400 nm) followed by a slow decrease to 646 °C (800 nm). These data curves will be most useful to grow on conventional SOI substrates large number of periods, regular Si/Si_0.8Ge_0.2 superlattices that will serve as the core of multi-channel or three-dimensional nano-wires field effect transistors.     

Ion transport behavior in a new fast Ag ion conducting composite electrolyte system: 0.85[0.75AgI:0.25AgCl]:0.15CeO2

Investigations on ion transport behavior of a new fast Ag⁺ ion conducting composite electrolyte system: 0.85[0.75AgI:0.25AgCl]: 0.1CeO₂ are reported. An alternate host: ‘[0.75AgI:0.25AgCl] mixed system/solid solution’ has been used as first-phase host matrix salt, in place of the traditional host AgI, while the micron-size particles of an insulating and chemically inert CeO₂ as second-phase dispersoid. The soaking time, plays important role in determining the conductivity enhancement in the composite system. The system: 0.85[0.75AgI:0.25AgCl]:0.1CeO₂ prepared at soaking time ∼10 min. exhibited optimum conductivity:σ_rt ∼ 1.2 × 10⁻³ S cm⁻¹ at room temperature, which is an order of magnitude higher than that of the pure host. Structural characterization studies were performed by X-ray diffraction (XRD) and differential scanning calorimetry (DSC). Temperature dependent measurement on the basic ionic parameters viz. conductivity (σ), ionic mobility (μ), mobile ion concentration (n), room temperature ionic transference number (t_ion) and ionic drift velocity (v_d) have been carried out on the system.     

Low-temperature RPCVD of Si,SiGe alloy,and Si1−yCy films on Si substrates using trisilane (Silcore)

Si homo-epitaxial growth by low-temperature reduced pressure chemical vapor deposition (RPCVD) using trisilane (Si₃H₈) has been investigated. The CVD growth of Si films from trisilane and silane on Si substrates are compared at temperatures between 500 and 950 °C. It is demonstrated that trisilane efficiency increases versus silane's one as the surface temperature decreases. Si epilayers from trisilane, with low surface roughness, are achieved at 600 and 550 °C with a growth rate equal to 12.4 and 4.3 nm min⁻¹, respectively. It is also shown that Si_1−xGe_x layers can be deposited using trisilane chemistry.     

Preparation and characterization of carbon aerogel microspheres by an inverse emulsion polymerization

Carbon aerogel (CA) microspheres have been successfully synthesized by an inverse emulsion polymerization and characterized by scanning electron microscopy (SEM), N₂ sorption isotherm and X-ray diffraction (XRD). The results show that the size and pore characteristics of carbon microsphere obviously depend on stirring speed and concentration of surfactant in the emulsion polymerization process. The resultant CA microspheres are amorphous carbon structure with the size ranging from about 2 to 50 μm by changing the stirring speed. CA microspheres with S_BET of 414-603 m² g^− 1 and V_meso of 0.028-0.432 cm³ g^− 1 are synthesized using different SPAN80 concentrations. The results of cyclic voltammetry indicate that the CA microspheres prepared at a stirring speed of 480 rpm and at V_s/V_h = 0.01 have ideal supercapacitive behavior in 6 M KOH electrolyte, the maximum specific capacitance of the electrode reaches 180 F g^− 1.     

Computational and Raman studies of phospho-tellurite glasses as ultrabroad Raman gain media

Molecular orbital calculations of two phospho-tellurite model clusters were performed to clarify the origins of the Raman bands in the Stokes region of over 1000 cm^− 1 in phospho-tellurite glasses. The Raman bands could be attributed to two components of 900-1050 cm^− 1 of symmetrical stretching vibrations of PO₄ units and 1050-1200 cm^− 1 of anti-symmetrical stretching vibrations of PO₄ units. It was also clarified that the top of the valence band of phospho-tellurite glasses consists of the lone pair electrons in a TeO_4 + 1 unit and the bottom of the conduction band of the glass consists of the antibonding hybrids of Te 5p and O 2p orbitals in the equatorial plane of a TeO₄ unit.We have developed new phospho-tellurite glasses which have the Raman gain peak of 30 times as large as silica glass or the Raman gain bandwidth of more than 1200 cm^− 1.     

Cost-effective synthesis of silica aerogels from fly ash via ambient pressure drying

Silica aerogels were synthesized from the industrial fly ash by ambient pressure drying method. The process consists of two stages, preparation of sodium silicate solution from fly ash by hydrothermal reaction with sodium hydroxide, and synthesis of porous silica aerogels from the obtained sodium silicate solution. Silica wet gels were formed by vitriol-catalysis or resin-exchange-alkali-catalysis of the obtained sodium silicate solution. The trimethylchlorosilane(TMCS)/ethanol(EtOH)/hexane mixed solution was used for solvent exchange/surface modification of the wet gel so as to obtain porous silica aerogels via ambient pressure drying. The results indicated that the synthesized silica aerogels were lightweight and hydrophobic. The BET specific surface area, pore volume and average pore diameter were 362.2-907.9 m² g^− 1, 0.738-4.875 cm³ g^− 1, and 7.69-24.09 nm respectively. Particularly, the synthesized silica aerogels by resin-exchange-alkali-catalysis method showed uniform mesoporous structure, and had much higher specific surface area (907.9 m² g^− 1) and pore volume (4.875 cm³ g^− 1) than that of by vitriol-catalysis process.