Magnetic Properties of Hf0.8Ta0.2（Fe0.97A0.03）2 （A=Al, Co, Mn） Systems

Moessbauer studies on the effect of substitution with 3% Al, Co, Mn atoms in the intermetallic compound of Hf0.8Ta0.2Fe2 are reported. The Al substitution leads to increase of the FM-AFM transition temperature and to decrease of the AFM-PM transition temperature. The Co substitution leads to disappearance of the FM state, only showing some FM impurity component, while Mn substituted compound indicates coexistence of FM and AFM states at low temperature. The phenomena imply complex itinerant electron properties in these magnetic systems.     

Analysis of （1, 2） （1, 3） and （2, 3） Bands in the c^3Ⅱu- b^3Ⅱg System of P2

We investigate the high resolution absorption spectroscopy of P2 radical, generated in ac glow discharge of PC13 buffered with helium, using optical heterodyne magnetic rotation enhanced concentration modulation spectroscopy in the visible region. The （1, 2）, （1, 3） and （2, 3） bands of c^3Ⅱu- b^3Ⅱg in the range 16620-17860cm^-1 are observed and their 3II2 3II2 subbands are rotationally analysed. A set of effective molecular constants for the Ω= 2 component of the states involved are determined.     

Superconducting Transition Temperature and Metal--Semiconductor Transition Temperature in YBa2Cu4O8/La0.67Ca0.33MnO3/YBa2Cu4O8 Trilayer Films

YBa₂Cu₄O₈/La_0.67Ca_0.33MnO₃/YBa₂Cu₄O₈(YBCO/LCMO/YBCO) trilayer films were prepared by magnetron facing-target sputtering. For the first time, the oscillatory behaviour of superconducting transition temperature T_c,ON with the thickness of LCMO (d_L) has been observed. The strongest nonmonotonic information in the T_c,ON--d_L curves appears clearly when d_L is larger than the critical thickness d_L^CR. The metal--semiconductor transition temperature can only be detected at d_L>d_L^CR. The dependence on the ferromagnetic spacer layer in YBCO/LCMO/YBCO systems suggests strongly the interplay of ferromagnetic and superconducting couplings.     

Relaxor Behaviour and Ferroelectric Properties of （Li0.12Na0.88） （Nb0.9-xWa0.10Sbx）O3 Lead-Free Ceramics

New lead-free ceramics （Lio.12Na0.88） （Nbo.9-x Ta0.10 Sbx） 03 （0.01 × 0.06） are synthesized by solid-state reaction method. The dielectric, piezoelectric and ferroelectric properties of the ceramics are studied. The dielectric constant dependence with temperature and frequency of the ceramic specimen with x = 0.04 shows typical characteristics of relaxor ferroelectrics, and the Vogel-Fulcher relationship is fulfilled. The dielectric behaviour and its relation to the phase transition phenomena are discussed. The polarization hysteresis loops at room temperature are also measured.     

Effect of Al^3＋ on Photoluminescence Properties of Eu^3＋-Doped BaZr（BO3）2 Phosphors

We discuss the influence of Al^3＋ on the charge transfer state （CTS） and the photoluminescence properties of BaZr（BO3）2：Eu. The results reveal that there is a red shift which is about 20nm for the charge transfer state when doping with Al^3＋ and indicate the formation of ‘free＇ electrons due to the change of microstructures. In addition, the influence or Al^3＋ doping on the PPR is analysed and a new explanation is raised based on the photo luminescent mechanism. It is the CTS intensity rather than the CTS energy that influences the peak-peak ratio.     

Field-Induced Domain Reorientation and Polarization Rotation of <110> Oriented Pb(Mg1/3Nb2/3)O3-PbTiO3 Single Crystals

Polarization hysteresis loops, x-ray diffraction and temperature dependent dielectric constant under different electric fields for <110> oriented 0.7PMN-0.3PT crystals are measured. The field-induced phase transition and the process of depolarization are discussed. The results show that with the electric field E increasing, the single-crystal form changes from the relaxor state of rhombohedral to normal rhombohedral, then to a monoclinic state via polar-axis reorientation and polarization rotation. Orthorhombic phase may present when E≥10kV, but it is an unstable form after E removal. The depolarization process is not just the reversal of the polarization process. It is noticed that only the temperature-dependent dielectric behaviour is not enough to judge the processes of the E-field induced phase transition.     

Structural and Optical Properties of Nanocrystal In2O3 Films by Thermal Oxidation of In2S3 Films

In₂S₃ nanocrystalline films are prepared on glass substrates by the spray pyrolysis technique using indium chloride and thiourea as precursors. The deposition is carried out at 350°C on glass substrates. The films are then annealed for two hour at 200, 400, 600, and 800°C in O₂ flow. This process allows the transformation of nanocrystal In₂O₃ films from In₂S₃ films and the reaction completes at 600°C. These results indicate that the In₂O₃ film prepared by this simple thermal oxidation method is a promising candidate for electro-optical and photovoltaic devices.     

Deep InP Gratings for Opto-Electronic Devices Etched by C12/CH4/Ar Inductively Coupled Plasma

Deep InP gratings are etched by C12/CH4/Ar inductively coupled plasma （ICP） at room temperature. A comparison is made between SiNz mask patterns formed by wet and dry etching. SF6 reactive ion etching is adopted for smooth and vertical sidewall. The etching conditions of C12/CH4/Ar ICP are optimized for high anisotropy, and a 1.7-μm-deep InP grating with an aspect ratio of 10：1 is demonstrated. The technique is then used for the fabrication of 1.55-μm laterally coupled distributed feedback A1GMnAs-InP laser.     

Photocatalytic Properties of TiO2/Si-NPA Nano Composite Systems

A new composite system is fabricated by depositing the TiO2 film on a silicon nanoporous pillar array （Si-NPA） and annealing at 500℃ using the spin coating method. Such a composite system exhibits a uniform morphology with the micron-dimension pillar array. Photocatalytic properties are investigated based on the degradation of methyl orange dye solution, and the results show that the photocatalytic efficiency of such a nano-composite system is 1.7 times that of the TiO2/glass system. The enhancement of photocatalytic efficiency is attributed to the large surface area of the TiO2/Si-NPA system.     

Ground State Property of LiV2O4

The spinel structure LiV2O4 is studied by local density approximation （LDA） as well as including strong correlation correction potential, i.e. the LDA＋U scheme, which concerns the strongly correlated interaction. With LDA, the orbitals of V 3d and O 2p are well separated so that it presents purely metallic heavv fermion behaviour. The total energy of ferromagnetic phase is slightly lower than that of paramagnetic phase within the LDA ap- proach. This implies that the ferromagnetic instability as a consequence of spin frustrated magnetism can be observed in experiments. The strong correlation interaction by using LDA＋U enhances the exchange splitting. The heavy-fermion feature can be derived from the sharp peak around the Fermi level from the density of states.     

Giant Magnetoresistance in La0.67Ca0.33MnO3/Alq3/Co Sandwiched-Structure Organic Spin Valves

La_0.67Ca_0.33MnO₃/Alq₃/Co sandwiched-structure organic spin valves are fabricated by vacuum thermal evaporation method. A giant magnetoresistance (GMR) of 14% is observed at low temperature 100K. At 30K, the magnetoresistance can increase to 50%. The large GMR of the device is attributed to the high spin polarization and low conductivity of the La_0.67Ca_0.33MnO₃ contact. The magnetoresistance ΔR/R and the coercive field of the Co electrode depend strongly on temperature. The large high-field magnetoresistance reported on La_0.67Sr_0.33MnO₃/Alq₃/Co organic spin valves [Nature 427 (2004) 821] is not observed in our La_0.67Ca_0.33MnO₃/Alq₂/Co organic spin valves.     

Photoemission Spectroscopy and Electronic Structures of LiMn2O4

We study the electronic structures of LiMn2O4 by x-ray and ultraviolet photoelectron spectroscopy （XPS, UPS） and resonant photoelectron spectroscopy （RPES）. XPS data suggest that the average oxidation state of Mn ions is 3.55, probably due to the small amount of lithium oxides on the surface. UPS and RPES data imply that Mn ions are in a high spin state, and RPES results show strong Mn3d-O2p hybridization in the LiMn2O4 valence band.     

Room-Temperature Ferromagnetism of Co-Doped CeO2 Thin Films on Si（111） substrates

Using Co2O3 as the Co source, doped cerium oxide thin films with the composition of Ce0.97C00.03O2-δ （CCO） are deposited on Si（111） and glass substrates by pulse laser deposition technique. X-ray diffraction reveals that CCO films with （111） preferential orientation are grown on Si, while the fihn on glass is polycrystalline with nanocrystal. X-ray photoelectron spectroscopy shows that the （Jo displaces the （;e atom and exists in high spin state rather than low spin state, which contributes to the room-temperature ferromagnetism confirmed by vibration sample magnetometer. I~ilms on Si and glass are different in ferromagnetism, which is believed to be induced by different film microstructures. Based on these results, the possible ferromagnetism in this insulating film is discussed. Anyway, successful fabrication of CCO films with room-temperature ferromagnetism on Si substrates is of great importance in both technological and theoretical aspects.     

Fe3O4 Segregation and Transport Properties of La0.67Ca0.33MnO3

Effect of Fe3O4 segregation at grain boundaries on the electrical transport and magnetic properties of La0.67Ca0.33MnO3 is investigated. The experimental results show that the Fe3O4 segregation not only shifts the paramagnetic-ferromagnetic transition temperature of La0.6TCa0.33MnO3 to a lower temperature region but also induces a new transition in a lower temperature region. Meanwhile, the transition processes observed in both the resistivity and magnetization curves are obviously widened. Compared to pure La0.67Ca0.33MnO3, we assume that the Fe3O4 segregation level at the grain boundaries can modify the electrical transport and magnetic properties of La0.67Ca0.33MnO3.     

Structural Transition of Gd2O3：Eu Induced by High Pressure

The structural transition of bulk and uano-size Gd2O3：Eu are studied by high pressure energy disperse x-ray diffraction （XRD） and high pressure photoluminescence. Our results show that in spite of different size of Gd2O3 particles, the cubic structure turns into a possible hexagonal one above 13.4 GPa. When the pressure is released, the sample reverses to the monoclinic structure. No cubic structure presents in the released samples. That is to say, the compression and relaxation of the sample leads to the cubic Gd2O3：Eu then turns into the monoclinic one.     

Enhancement of Critical Current Density in Graphite Doped MgB2 Wires

Graphite doped MgB2-xCx (x = 0.00, 0.05, 0.10) wires were fabricated via the in situ powder-in-tube method in flowing argon by using low carbon steel tubes as the sheath materials. With the increase of graphite concentration,the amount of unreacted graphite in the core area increases, and the average grain size of MgB2 decreases. It is found that the critical current density Jc can be significantly improved by graphite doping. The MgB2 wire with x = 0.05 exhibits the best Jc value of 16710 A/cm^2 at 6K, 4.5T, but the MgB1.9C0.1 wire has the highest Jc value of 2060 A/cm^2 at 6 K, 8 T. It is suggested that the enhancement of Jc is due to not only the improvement of the microstructure features but also the introduction of pinning centres.     

Near Infrared Photoluminescence from Yb,Al Co-implanted SiO2 Films on Silicon

Intense room-temperature near infrared （NIR） photoluminescence （980 nm and 1032 nm） is observed from Yb,Al co-implanted SiO2 films on silicon. The optical transitions occur between the ^2F5/2 and ^2F7/2 levels of Yb^3＋ in SiO2. The additional Al-implantation into SiO2 films can effectively improve the concentration quenching effect of Yb^3＋ in SiO2. Photoluminescence excitation spectroscopy shows that the NIR photoluminescence is due to the non-radiative energy transfer from Al-implantation-induced non-bridging oxygen hole defects in SiO2 to Yb^3＋ in the Yb-related luminescent complexes. It is believed that the defect-mediated luminescence of rare-earth ions in SiO2 is very effective.     

Electrical Properties of La-Doped Al2O3 Films on Si （100） Substrates as a High-Dielectric-Constant Gate Material

Amorphous La-doped Al2O3 （La： Al2O3） thin films are deposited on n-type （100） Si substrates by rf magnetron co-sputterlng. The composition of the deposited films is measured by energy dispersive x-ray spectroscopy： Capacitance-voltage measurement shows that the dielectric constant k of La-doped Al2O3 films ranges from 8.5 to 11.6 with the increasing La content, and the highest k value of 11.6 is obtained for the 20.14% La content film. In the structure of the Al/La：Al2O3/Si metal oxide semiconductor, the dominant conduction stems from the space- charge-limited current at different temperatures. In addition, the wavelength dependence of the transmittance is studied by ultraviolet spectroscopy and the band gap of all the deposited films is above 5.5eV. The results demonstrate that La-doped Al2O3 can meet the requirement of next-generation gate materials.     

Structural Stabilities of Ordered Nb4 Clusters on the Cu（111） and Cu（100） Surfaces

Based on first-principles calculations, we show that very high-density periodic arrays of Nb4 clusters with both the tetrahedron and quadrangle configurations can be stably absorbed on the Cu（111） and Cu（100） surfaces, with the quadrangle configurations more stable than the tetrahedron ones. The strong covalent bonding between atoms within the Nb4 clusters contributes to the stability of Nb4 adsorptions on the Cu surfaces. The energy barriers for the tetrahedron to the quadrangle-Nb4 on Cu（111） and （100） are around 1.21 eV and 0.94 eV/cluster, respectively. The stable adsorption of high-density Nb4 on these surfaces should have important applications.     

Synthesis of Cubic Boron Nitride by the Reaction of Li3N and B2O3

Cubic boron nitride is synthesized by the reaction of Li3N and B203 under high pressure and high temperature （4.0-5.0 GPa, 1350-1500℃）. The minimum pressure of cBN formation is 4.0 GPa. The present condition of cBN formation is clearly lower than the eutectic temperature of Li3BN2 and BN in the Li3N-hBN system （5.5 GPa, 1610℃）. The content of cBN in the sample increases, while the content of hBN decreases with the temperature and pressure. The maximum conversion rate （5.0 GPa, 1500℃） is about 34%, which is higher than that in the hBN-Li3N system. The cBN crystals are octahedral or tetrahedral in shape and approximately 20 μm in diameter.