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1.
Tin dioxide (SnO2) nanobelts have been successfully synthesized in bulk quantity by a simple and low-cost process based on the thermal evaporation of tin powders at 800 °C. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) observations reveal that the nanobelts are uniform, with lengths from several-hundred micrometers to a few millimeters, widths of 60 to 250 nm and thicknesses of 10 to 30 nm. X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX) and selected-area electron diffraction analysis (SAED) indicate that the nanobelts are tetragonal rutile structure of SnO2. The SnO2 nanobelts grow via a vapor–solid (VS) process. Received: 3 June 2002 / Accepted: 10 June 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +86-551/559-1434, E-mail: gwmeng@mail.issp.ac.cn  相似文献   

2.
SnO2 nanowires were synthesized using a direct gas reaction route and were characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), selected-area electron diffraction (SAED), high-resolution transmission electron microscopy (HRTEM) and Raman-scattering spectroscopy. XRD, SEM, SAED and HRTEM indicated that the products were tetragonal SnO2 nanowires with diameters of 10–50 nm. The nanowires were single crystal and solid inside. Dendritic nanowires were observed for the first time. Three vibrational modes were observed in the Raman spectra of the samples. Received: 7 January 2002 / Accepted: 11 April 2002 / Published online: 19 July 2002  相似文献   

3.
Highly oriented GaN nanowire arrays have been achieved by the catalytic reaction of gallium with ammonium. The resulting materials were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). SEM images show that the resulting materials are nanowire arrays with a uniform length of about 10 μm. XRD, EDS, TEM and SAED indicate that the nanowire arrays are single-crystal hexagonal GaN with a wurtzite structure. They have diameters of 10 to 20 nm. Received: 2 October 2002 / Accepted: 7 October 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. E-mail: wwwangjc@sina.com  相似文献   

4.
Ga掺SnO2单晶纳米线和SnO2/Ga2O3自组织异质微米梳是通过简单的热蒸发沉淀法一步制得的,并通过X射线粉末衍射(XRD)、场激发扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)、X射线能量散射谱仪(EDS)、选区电子衍射谱(SAED)进行表征.从FE-SEM的图片上可以看出生成的产物具有纳米线和一种新的微米梳状形貌.XRD、SAED和EDS显示他们是单晶四角形的SnO2.产物的主干呈带状,纳米带阵列均匀的分布在主干的一侧或两侧.大量的Ga2O3纳米颗粒沉积在微米梳的表面.主干纳米带主要沿着[100]方向生长, 自组织的纳米带分支则在主干的(100)面上沿着[110]或者[110]方向生长.由于Ga的大量掺杂,光致发光谱的衍射峰发生红移并严重变宽.针对SnO2:Ga2O3异质微米梳的生长过程进行了解释,并讨论了实验条件对形貌的影响.  相似文献   

5.
Single-crystalline gallium nitride nanobelts have been synthesized through the reaction of gallium vapor with flowing ammonia using nickel as a catalyst. The as-synthesized products were characterized using X-ray powder diffraction (XRD), scanning electron microscopy, energy-dispersive X-ray spectroscopy, transmission electron microscopy, and selected-area electron diffraction (SAED). XRD and SAED results revealed that the products are pure, single-crystalline GaN with hexagonal structure. The widths and thickness of the nanobelts ranged from 80 to 200 nm, and 10 to 30 nm, respectively. The lengths were up to several tens of micrometers. The nanobelts had smooth surface with no amorphous sheath, and a sharp-tip end. The growth mechanism of nanobelts was discussed.  相似文献   

6.
Self-aligned GaN nanowire quasi-arrays were synthesized on MgO crystal through a simple gas reaction method. They were characterized by powder X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray (EDX) spectroscopy and high-resolution transmission electron microscopy (HRTEM). FE-SEMimages showed that the product consisted of quasi-arrays of nanowires. XRD, EDX and HRTEM indicated that the nanowires were wurtzite GaN single crystals. Received: 19 June 2000 / Accepted: 21 June 2000 / Published online: 9 August 2000  相似文献   

7.
In-doped Ga2O3 zigzag-shaped nanowires and undoped Ga2O3 nanowires have been synthesized on Si substrate by thermal evaporation of mixed powders of Ga, In2O3 and graphite at 1000 °C without using any catalyst via a vapor-solid growth mechanism. The morphologies and microstructures of the products were characterized by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS) and photoluminescence spectroscopy (PL). The nanowires range from 100 nm to several hundreds of nanometers in diameter and several tens of micrometers in length. A broad emission band from 400 to 700 nm is obtained in the PL spectrum of these nanowires at room temperature. There are two blue-emission peaks centering at 450 and 500 nm, which originate from the oxygen vacancies, gallium vacancies and gallium-oxygen vacancy pairs.  相似文献   

8.
Metastable VO2 nanobelts, designated as VO2 (B), were successfully fabricated by a facile hydrothermal route in the presence of V2O5 and glucose. The samples were characterized by X-ray diffraction (XRD), X-ray photoelectron spectra (XPS), transmission electron microscopy (TEM), selected area electronic diffraction (SAED), high-resolution transmission electron microscopy (HRTEM) and scanning electron microscopy (SEM) techniques. The main synthesis parameters such as temperature, reaction time and molar ratio of the starting materials have been also discussed. The results showed that pure B phase VO2 nanobelts with high crystallinity can be prepared easily at 180 °C in 24 h at the molar ratio of V2O5:glucose=1:1. Typically, the belt-like products were 0.6-1.2 μm long, 80-150 nm wide and 20-30 nm thick. It is noted that the whole process is free of any harmful reducing reagents and surfactants, and valuable gluconic acid can be formed as the main by-product. From an economic and environmental point of view, the present approach is particularly fit for the synthesis of VO2 (B) nanobelts on a large scale.  相似文献   

9.
Electrochemical synthesis of ordered CdTe nanowire arrays   总被引:1,自引:0,他引:1  
Semiconductor CdTe nanowire arrays embedded in the nanochannels of the porous anodic alumina (PAA) template have been prepared by using a potentiostatic electrochemical deposition method. The morphology and structure of the CdTe nanowire arrays have been characterized by X-ray powder diffraction, transmission electron microscopy, and high-resolution transmission electron microscopy. It is found that the CdTe nanowires with diameters and lengths of about 60 nm are single-crystalline with cubic phase structure, uniformly and continuously embedded in the nanochannels of the PAA template. X-ray energy-dispersion analysis and X-ray photoelectron spectroscopy analysis indicate that stoichiometric CdTe was formed. The growth mechanism of the CdTe nanowires is also discussed. Received: 11 June 2002 / Accepted: 2 July 2002 / Published online: 8 January 2003 RID="*" ID="*"Corresponding author. Fax: +86-551/559-1434, E-mail: aiwuzhao@yahoo.com.cn  相似文献   

10.
Zn2SnO4:Eu3+ nanocrystals were one-step synthesized by hydrothermal method for the first time. All the products were systematically characterized by powder X-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), electron probe X-ray microanalyzer (EPMA), photoluminescence (PL) and photoluminescent excitation (PLE). The characteristic peak of Eu3+-doped in Zn2SnO4 nanocrystals was also detected. The luminescent properties of blank and Eu3+-doped Zn2SnO4 nanocrystals were reported.  相似文献   

11.
Morphologies of GaN one-dimensional materials   总被引:8,自引:0,他引:8  
GaN one-dimensional materials with different morphologies were formed on LaAlO3 crystal, silicon crystal and quartz glass substrates through a simple sublimation method. They were characterized by powder X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM) and energy-dispersive X-ray (EDX) spectroscopy. FE-SEM images showed that the morphologies of the one-dimensional materials included straight nanorods, curved nanowires, nanoribbons, zigzag nanorods and beaded or capture-tree nanorods. XRD and EDX studies indicated that all the one-dimensional materials were wurtzite GaN. Received: 14 July 2000 / Accepted: 17 July 2000 / Published online: 20 September 2000  相似文献   

12.
SnO2 nanowires mixed nanodendrites for high ethanol sensor response   总被引:1,自引:0,他引:1  
Mixed morphology of SnO2 nanowires and nanodendrites was synthesized on the gold-coated alumina substrates by carbothermal reduction of SnO2 in closed crucible. The products were characterized by scanning electron microscopy, x-ray diffractometer, and transmission electron microscopy. Results showed the SnO2 nanowires and the SnO2 nanodendrites branched out from the main nanowires. Both SnO2 nanostructures were pure tetragonal rutile structure. The nanowires were grown in [101] and directions with the diameter of 50–150 nm and the length of a few 10 μm. The nanodendrites were about 100–300 nm in diameter. The growth mechanism of the SnO2 nanostructures was also discussed. Characterization of ethanol gas sensor, based on the mixed morphology of the SnO2 nanostructures, was carried out. The optimal temperature was about 360 °C and the sensor response was 120 for 1000 ppm of ethanol concentration.  相似文献   

13.
In this paper, we report the hydrothermal preparation of Cd(OH)2 nanowires and further conversion to CdO nanobelts, CdS nanowires and CdSe nanoparticles through thermal treatment, solvothermal and mixed-solvothermal routes, respectively. The as-obtained products were characterized by means of powder X-ray diffraction (XRD), transmission electron microscopy (TEM), and field emission scanning electron microscopy (FEMSEM). Research showed that four cadmium compounds were good photocatalysts for the degradation of organic dyes such as Safranine T and Pyronine B, under irradiation of 365 nm UV light. The order of catalytic activity of different materials was found to be Cd(OH)2<CdO<CdS<CdSe.  相似文献   

14.
Manganese oxide (hausmannite) nanowires were prepared by annealing precursor powders at a temperature of 800 °C for 3 h, which were produced in a novel inverse microemulsion (IμE) system. The microstructures of the as-prepared Mn3O4 nanowires were investigated by means of X-ray diffraction, transmission electron microscopy, and Raman spectra. It has been found that the Mn3O4 nanowires were relatively straight and their surfaces were smooth with a typical diameter of 75–150 nm. The formation mechanism of the Mn3O4 nanowires is discussed. Received: 30 May 2002 / Accepted: 7 October 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. Fax: +86-25/359-5535, E-mail: wangqun@nju.edu.cn  相似文献   

15.
LiMnO2 nanowire arrays were prepared using a porous anodic aluminum oxide (AAO) template from a sol–gel solution containing Li(OAc) and Mn(OAc)2. Electron-microscope results showed that a uniform length and diameter of LiMnO2 nanowires were obtained, and the length and diameter of the LiMnO2 nanowires are dependent on the pore diameter and the thickness of the applied AAO template. X-ray diffraction and electron diffraction pattern investigations demonstrate that LiMnO2 nanowires are a layered structure of LiMnO2 crystal. X-ray photoelectron spectroscopy analysis indicates that a material closely resembling stoichiometric layered LiMnO2 has been obtained. Received: 2 September 2001 / Accepted: 6 January 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +86-931/891-2582, E-mail: lihl@lzu.edu.cn  相似文献   

16.
In2O3 nanowires have been successfully fabricated on a large scale from indium particles by thermal evaporation at 1030 °C. The as-synthesized products were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). SEM and TEM images show that these nanowires are uniform with diameters of about 60–120 nm and lengths of about 15–25 μm. XRD and selected-area electron diffraction analysis together indicate that these In2O3 nanowires crystallize in a cubic structure of the bixbyite Mn2O3 (I) type (also called the C-type rare-earth oxide structure). The growth mechanism of these nanowires is also discussed. Received: 29 June 2001 / Accepted: 28 September 2001 / Published online: 20 December 2001  相似文献   

17.
In this study, beta-gallium oxide (β-Ga2O3) nanowires, nanobelts, nanosheets, and nanograsses were synthesized through microwave plasma of liquid phase gallium containing H2O in Ar atmosphere using silicon as the substrate. The nanowires with diameters of about 20-30 nm were several tens of microns long and the nanobelts with thickness of about 20-30 nm were tens to hundreds of microns long. The morphology and structure of products were analyzed by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and X-ray diffraction (XRD). These results showed that multiple nucleation and growth of β-Ga2O3 nanostructures could easily occur directly out of liquid gallium exposed to appropriate H2O and Ar in the gas phase. The growth process of β-Ga2O3 nanostructures may be dominated by VS (vapor-solid) mechanism.  相似文献   

18.
High-quality GaN nanowires synthesized using a CVD approach   总被引:3,自引:0,他引:3  
High-quality GaN nanowires were synthesized on a large-area Si substrate by direct reaction of gallium with ammonia using InCl3 as a catalyst. The morphology and microstructure of the resulting products were characterized using a field-emission scanning electron microscope (SEM), a high-resolution transmission electron microscope, and X-ray diffraction (XRD). XRD and electron diffraction revealed that the nanowires are of a hexagonal GaN phase with the wurtzite structure. The SEM study showed that the nanowires are straight and have a smooth morphology with lengths up to 500 μm. The present results reveal that InCl3 is an optimal catalyst in GaN nanowire production. Received: 2 April 2002 / Accepted: 12 April 2002 / Published online: 19 July 2002  相似文献   

19.
Mo-doped WO3 nanowires were fabricated by a hydrothermal method in the presence of K2SO4. The physical properties of prepared nanowires were characterized by X-ray diffraction (XRD), energy-dispersive X-ray analysis (EDS), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The results show that the obtained products are nanowires with diameters ranging between 10 and 20 nm, and lengths of about 600 nm. Its photoactivity was evaluated through the photodegradation of methylene blue (MB) in aqueous solution. Effects of the molybdenum concentration on the photoactivity of the obtained samples were investigated detailedly. The experimental results indicated that the Mo-doping enhanced the photoactivity of WO3 nanowires.  相似文献   

20.
A simple wet-chemical synthesis and characterization of CuO nanorods   总被引:4,自引:0,他引:4  
Using a simple wet-chemical route, we synthesized CuO nanorods with diameters of ca. 5–15 nm and lengths of up to 400 nm. The purity, crystallinity, morphology, structure features, and chemical composition of the as-prepared CuO nanorods were investigated by powder X-ray diffraction, transmission electron microscopy, high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy. Received: 22 March 2002 / Accepted: 12 June 2002 / Published online: 28 October 2002 RID="*" ID="*"Corresponding author. Fax: +86-25/359-5535, E-mail: wangqun@nju.edu.cn  相似文献   

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