Photoluminescence and multiphonon resonant Raman scattering in Ni-and Co-doped Zn1−x MnxTe crystals

Low-temperature photoluminescence, exciton reflection, and multiphonon resonant Raman scattering spectra of Ni-and Co-doped Zn_1−x Mn_xTe crystals were investigated. Intense emission occurs in a broad spectral region (1100–17 000 cm⁻¹) in the crystals containing Ni atoms. It is caused by intracenter transitions involving Mn²⁺ ions and transitions between the conduction band and a level of the doubly charged acceptor. The features of the exciton photoluminescence and multiphonon resonant Raman scattering involving longitudinal-optical (LO) phonons at various temperatures are investigated. The insignificant efficiency of the localization of excitons on potential fluctuations in the Zn_1−x Mn_xTe:Co crystals is established. A temperature-induced increase in the intensity of the 5LO multiphonon resonant Raman scattering line due to the approach of the conditions for resonance between this line and the ground exciton state is observed in these crystals. Fiz. Tverd. Tela (St. Petersburg) 40, 616–621 (April 1998)     

Features of the optical absorption of crystals of the fullerene C60 in the region of the orientational phase transition

The absorption coefficient of perfect single crystals of the fullerene C₆₀ is measured in the energy range 1.6–2.1 eV at temperatures from 4.2 to 300 K. An absorption fine structure is discovered in the and is assigned to electronic and vibronic transitions with the production of free excitons and excitons localized on structural defects. It is shown that in the region of the structural phase transition from a face-centered cubic structure to a simple cubic structure the absorption coefficient undergoes a jump, which is associated with an energy shift of the free exciton line toward lower energies. It is discovered that spatial inhomogeneity, which is associated with the growth of the new phase from a finite number of nuclei, appears in the crystal at the time of this transition. Zh. éksp. Teor. Fiz. 114, 2211–2224 (December 1998)     

Photoinduced light absorption by C60 films in the 0.08–4.0-eV spectral range

Spectra of photoinduced light absorption in C₆₀ films at high and low excitations in the temperature range between 15 and 300 K have been measured. In addition to the well-known explanation of photoinduced absorption in terms of optical transitions in the system of photogenerated singlet excitons, triplet excitons, and polarons, changes in the absorption spectrum of the fullerite ground state must be considered. We suggest taking into account the effect of crystal field in explaining the features of the photoinduced absorption spectrum. A feature similar to the inverted luminescence spectrum and ascribed to optical excitation of singlet excitons, which is partially allowed owing to intermolecular interaction, has been detected in spectrum of photoinduced absorption. Zh. éksp. Teor. Fiz. 112, 246–256 (July 1997)     

Long-term evolution of photoinduced light absorption in C60 films

It is found that photoinduced absorption in the energy range 0.6–2.1 eV in C₆₀ films grown by the same method can differ by a factor of 100. This change is attributable a 10⁶-fold increase in the relaxation time τ of electron-hole photoexcitations after working with the films for several months. It is established that the bimolecular recombination mechanism for photoexcitations (triplet excitons and polarons), which is typical of as-prepared and partially aged films, is superseded in fully aged films by thermally activated tunneling of localized photoexcitations. An investigation of the film transmission spectra in the photon energy range 0.2–5.0 eV shows that the long-time variations of the optical properties are associated with a decrease in the concentration of defects forming shallow tails of the density of states. An abrupt decrease of the relaxation time τ and the photoinduced absorption is observed in both types of films at T⩾80 K. Fiz. Tverd. Tela (St. Petersburg) 39, 1303–1309 (July 1997)     

Photoinduced transformation of luminescence centers in C60 crystals at high pressure

The influence of laser irradiation on the photoluminescence spectra of perfect C₆₀ crystals in the orientationally disordered phase is investigated. It is shown that irradiation of the crystals with low-power light for short durations at T=200 K produces radical changes in the luminescence spectrum. The pressure dependences of the spectral bands of the phototransformed and initial (without irradiation) spectra differ significantly, indicating a photoinduced structural transformation of the X centers responsible for the luminescence of C₆₀. The phototransformed C₆₀ crystals are stable against further exposure to light irradiation and pressure. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 12, 784–788 (25 December 1999) Deceased.     

Exciton transitions in photoluminescence spectra of AIAs/GaAs superlattices

Conclusions The studies performed here have shown that the superlattice samples studied exhibit photoluminescence spectra which agree with the Kronig-Penney model, although in calculating the energies of the radiative transitions it is necessary to take into account the binding energy of the excitons,E _B. Due to the exciton—phonon interaction, the 1HH peak breaks up on the long wavelength side into a Poisson distribution. The energy of the LO phonon so determined is 34 meV. Bands due toD ⁰-A ⁰ andD ⁰X transitions, caused by remaining low-level impurities in the GaAs crystals are also observed. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 61, Nos. 3–4, pp. 241–245, September–October, 1994.     

Metastable optical absorption of relaxed electronic excitations in BeO-Zn crystals

Spectra of metastable optical absorption and its relaxation kinetics have been studied in zinc-doped BeO crystals by time-resolved pulsed absorption spectroscopy. A comparison of the observed induced optical absorption of self-trapped excitons and small-radius excitons bound to the zinc impurity suggests that their hole components have similar structures and reveals distinctive features of “forbidden” optical transitions in the electronic components. Metastable optical absorption in Zn⁺ centers has been discovered. It is shown that the small-radius excitons bound to the zinc impurity form in the hole stages of thermally stimulated tunneling recombination processes involving Zn⁺ electronic centers. It has been found that the high recombination probability of the electronic and hole centers created in BeO-Zn crystals by an electron beam may be due to the high degree of their spatial correlation. Fiz. Tverd. Tela (St. Petersburg) 41, 601–605 (April 1999)     

Time-resolved luminescence spectroscopy of pure and doped with Ce3+ ions SrAlF5 crystals

The results of a study of time-resolved photoluminescence (PL) and energy transfer in both pure and doped with Ce³⁺ ions SrAlF₅ (SAF) single crystals are presented. The time-resolved and steady-state PL spectra in the energy range of 1.5–6.0 eV, the PL excitation spectra and the reflectivity in the energy range of 3.7–21 eV, as well as the PL decay kinetics were measured at 8.8 and 295 K. The lattice defects were revealed in the low temperature PL spectra (emission bands at 2.9 and 4.5 eV) in the undoped SAF crystals. The luminescence spectra of the doped Ce³⁺:SAF crystals demonstrate a new selective emission bands in the range of 3.7–4.5 eV with the exponential decay kinetics (τ ≈ 60 ns at X-ray excitation). These bands correspond to the d-f transitions in Ce³⁺ ions, which occupy nonequivalent sites in the crystal lattice.     

Luminescence properties of calcium-iodide crystals

The effect of the conditions of preparation, temperature, and the action of x rays on the luminescence properties of calcium-iodide scintillation crystals is investigated. On the basis of the results of a study of the spectral characteristics of CaI₂ and CaI₂:H₂ crystals for optical and x-ray excitation in the temperature range 90–400 K, also taking into account the results of a study of the luminescence properties of CaI₂ crystals activated by Cl⁻, Br⁻, OH⁻, and Ca²⁺ impurities, it is suggested that the 236-nm band observed in the excitation spectra of crystals of calcium iodide may be caused by an uncontrollable hydrogen impurity. The luminescence of these crystals with maximum at 395 nm is ascribed to radiative recombination of excitons trapped at H⁻ ions. Zh. Tekh. Fiz. 69, 135–136 (January 1999)     

Electronic properties of C60 single crystals doped with lithium by electrodiffusion

Diffusion of lithium cations in C₆₀ single crystals driven by electric field has been detected and studied. A novel technique for fullerene crystal doping based on injection of ions through a “superionic crystal/C₆₀ single crystal” heterojunction has been suggested. It has been found that lithium doping of C₆₀ single crystals brings about an ESR signal, and this signal as a function of time has been investigated. The electronic conductivity in Li_xC₆₀ crystals has a nonmetallic nature. Reflection spectra measured in the IR band have shown that the reflectivity due to free electrons gradually decreases with time, which correlates with the evolution of signals due to ESR and microwave conductivity. Lithium doping of crystals increases the oscillator strength of the T _1u (4) vibrational mode and shifts it to lower frequencies (from 1429 cm⁻¹ to 1413 cm⁻¹), which indicates that one electron is present at the C₆₀ molecule, and this fact may be treated as evidence that the LiC₆₀ phase is generated in a C₆₀ crystal. Zh. éksp. Teor. Fiz. 116, 1706–1722 (November 1999)     

Free and localized excitons in the luminescence spectrum of C60 crystals at high pressure

The luminescence spectra of C₆₀ single crystals are studied at T≅10 K and pressure up to 4.0 GPa. It is observed that as the pressure increases, one fine-structure band in the spectrum intensifies sharply and dominates at pressures P≥1.7 GPa. The pressure shift of this band is much larger than the shift of other bands in the spectrum, and its magnitude correlates with the pressure dependence of the band gap. It is shown that this band could be due to radiative recombination of free Frenkel excitons. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 3, 234–238 (10 August 1998)     

Luminescence spectra fine structure for uranyl sulfate and oxalate crystals

Quasi-line low-temperature (T = 77 and 4.2 K) luminescence spectra of uranyl sulfates and oxalates have been recorded and analyzed. It has been shown that the spectral structure is determined by the manifestation of the internal and external vibrations of both the uranyl ion and molecular groups (SO₄)^2– and (C₂O₄)^2–bonded to the uranyl ion. The spectral line half-width is of the order of ≈5–7 cm^–1; the line shape, close to Lorentzian. The fluorescence spectra may be complicated by structural defects in the crystals.     

Kinetics of indirect photoluminescence in GaAs/AlxGa1−x As double quantum wells in a random potential with a large amplitude

The kinetics of indirect photoluminescence of GaAs/Al_xGa_1−x As double quantum wells, characterized by a random potential with a large amplitude (the linewidth of the indirect photoluminescence is comparable to the binding energy of an indirect exciton) in magnetic fields B≤12 T at low temperatures T≥1.3 K is investigated. It is found that the indirect-recombination time increases with the magnetic field and decreases with increasing temperature. It is shown that the kinetics of indirect photoluminescence corresponds to single-exciton recombination in the presence of a random potential in the plane of the double quantum wells. The variation of the nonradiative recombination time is discussed in terms of the variation of the transport of indirect excitons to nonradiative recombination centers, and the variation of the radiative recombination time is discussed in terms of the variation of the population of optically active excitonic states and the localization radius of indirect excitons. The photoluminescence kinetics of indirect excitons, which is observed in the studied GaAs/Al_xGa_1−x As double quantum wells for which the random potential has a large amplitude, is qualitatively different from the photoluminescence kinetics of indirect excitons in AlAs/GaAs wells and GaAs/Al_xGa_1−x As double quantum wells with a random potential having a small amplitude. The temporal evolution of the photoluminescence spectra in the direct and indirect regimes is studied. It is shown that the evolution of the photoluminescence spectra corresponds to excitonic recombination in a random potential. Zh. éksp. Teor. Fiz. 115, 1890–1905 (May 1999)     

Energy transfer by singlet and triplet excitons in carbazole-containing polymers

Quantum yields of pyrene fluorescence and bis[2-(2′-benzothienyl)-pyridinato-N,C^3′](acetylacetonate)iridium [Btp₂Ir(acac)] phosphorescence upon excitation via a matrix of poly-N-epoxypropylcarbazole (PEPC) or poly-N-epoxypropyl-3,6-dibromocarbazole (DBrPEPC), respectively, were found to be lower than those for the compounds directly excited in a polystyrene (PS) matrix. It was established that the energy in PEPC was transferred to an acceptor by both singlet excitons (by migration and long-range dipole–dipole interaction) and triplet excitons (through migration and short-range exchange electron interaction); however, only by triplet excitons in DBrPEPC, which did not show any fluorescence. The energy-transfer efficiency in PEPC by singlet excitons was higher than by triplet excitons. The observed effects were explained by the fact that energy transfer to the acceptor competed with such processes as localization of the excitons in the “tail” energy states, dissociation of singlet excitons into geminal electron–hole pairs (EHP), and capture of triplet excitons by polymer oxidation products.     

Formation and stabilization of F centers following direct generation of self-trapped excitons in KCl crystals

The spectrum of luminescent F centers generated in high-purity KCl crystals by 7–10.2-eV photons has been measured at 230 K. The pulsed annealing of these centers (250–550 K), as well as the dependence of the efficiency of stable F-center generation on irradiation temperature (80–500 K) has been studied. The efficiencies of F ⁻ and Cl ₃ ⁻ -center generation are maximum under direct optical creation of self-trapped excitons in the region of the Urbach intrinsicabsorption tail. Besides the exciton decay with formation of F centers and mobile H centers, a high-temperature exciton decay channel which involves creation of cation defects stabilizing the H centers has been revealed. Fiz. Tverd. Tela (St. Petersburg) 41, 433–441 (March 1999)     

New type of excitonic radiation in the solid solutions CdS1−x Sex

Manifestations of bulk crystalline regions with stacking faults are detected in the reflection and photoluminescence spectra of CdS_1-x Sex crystals with a variety of compositions. The magnitude of the crystal-field anisotropy and the spin-orbit splitting in these crystals are estimated. It is shown that reabsorption affects the form of the photoluminescence in crystals with stacking faults. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 3, 221–225 (10 August 1999)     

Luminescence of self-trapped excitons in calcium fluoride under pulsed electron irradiation

Time-resolved pulsed spectroscopy was used to measure the luminescence spectra of calcium fluoride. Characteristic features of the luminescence of self-trapped excitons are discussed. It is shown that various configurations of self-trapped excitons incorporating hole nuclei of a more complex structure, may be formed in CaF₂ crystals. Fiz. Tverd. Tela (St. Petersburg) 40, 1226–1227 (July 1998)     

Self-trapped excitons in low-symmetry fluoride crystals

Triplet self-trapped excitons have been detected in low-symmetry crystals of the fluorides BaFCl₄, BaFBr, and LaF₃. In BaFBr crystals two types of excitons, on-center and off-center (with a symmetric or displaced configuration). The slow initiation of exciton luminescence in BaFBr is associated with the barrier transition from an on-center to an off-center configuration. In LaF₃ crystals tunnelling population of the exciton state also appears in the initiation. In LaF₃ crystals excitons appear only in the luminescence and excitation spectra while in the absorption spectra the exciton transitions are concealed beneath band-to-band transitions. A. P. Vinogradov Institute of Geochemistry, Siberian Branch of the Russian Academy of Sciences. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 45–56, November, 1996.     

Luminescence of mercuric iodide crystals

Low-temperature (4.2–130 K) photoluminescence spectra of HgI₂ crystals have been measured in the 540–700 nm region. An analysis of the characteristics (intensity vs temperature and excitation power relations, afterglow times, excitation spectra) of the 560, 620, and 635 nm emission bands suggests the following assignments: the 560 nm band is due to radiative annihilation of excitons bound to mercury vacancies, and the “red” emission originates from recombination of free (620 nm) and donor-localized (635 nm) electrons with a hole-filled acceptor level. The energies of the corresponding donor and acceptor levels have been estimated. New emission bands at 540, 545, and 575 nm have been discovered, and their origin discussed. Fiz. Tverd. Tela (St. Petersburg) 39, 67–73 (January 1997)     

Orientational states of C60 molecule in crystals

Local symmetry of orientational states of the C₆₀ molecule in crystals has been investigated. It was shown that the various orientational phase transitions in different crystals are related to different orientational orbits. The model of orientational phase transitions based on a sequence of orientational states with different symmetry properties has been suggested. We have found that both the local symmetry of C₆₀ molecule and the symmetry of its internal vibrations become higher after a reduction of crystal spatial symmetry at the phase transition. This effect is fairly common and can be observed in the orientational order-disorder phase transitions with wave vectors at the Brillouin zone boundary. Feasible manifestations of the predicted effect in various experiments are discussed. Zh. éksp. Teor. Fiz. 113, 1081–1093 (March 1998)